TWI443811B - Photoelectric element, display unit and fabrication method thereof - Google Patents

Description

Photoelectric element, display unit and method of manufacturing same

The present invention relates to a display unit and a method of fabricating the same, and more particularly to a display unit having an in-cell photoelectric element and a method of fabricating the same.

The touch panel is roughly classified into a resistive touch panel, a capacitive touch panel, an optical touch panel, an acoustic wave touch panel, and an electromagnetic touch panel according to different sensing methods. Since the optical touch panel not only has the function of touch but also has the function of image scanner, the optical touch panel has been gradually used in various electronic products. Among the various types of optical touch panels, the design with embedded photoelectric components is favored. The main reason is that the fabrication of the embedded photovoltaic components can be integrated into the fabrication of the display panel, so that The display panel (touch display panel) of the embedded photovoltaic element has a thin thickness and is light in weight. However, it is still known that display panels with in-cell optoelectronic components are still in the early stage of development, and how to manufacture a touch display panel with low cost, high sensitivity and dual side photo-sensing function is still currently developed. One of the focuses.

An embodiment of the invention provides a photovoltaic element comprising a transparent bottom electrode, a light sensitive layer, a first electrode, a second electrode, and a transparent top electrode. The light sensitive layer is located above the transparent bottom electrode. The first electrode and the second electrode are disposed on the light sensitive layer. In addition, the transparent top electrode is located above the light sensitive layer.

Another embodiment of the present invention provides a display unit that can be disposed on a substrate. The display unit includes a pixel, a top electrode, a display medium, and a photovoltaic element. The pixel can be disposed on the substrate, the pixel includes at least one thin film transistor and a pixel electrode, the thin film transistor includes a channel layer, a first bottom electrode, a first electrode and a second electrode, wherein the first bottom The electrode is located below the channel layer, and the pixel electrode is electrically connected to the second electrode. The top electrode is located above the pixel electrode and has a display medium between the pixel electrode and the top electrode. The photo-electric component can be disposed on the substrate, the photo-electric component includes a light-sensitive layer, a second bottom electrode, a third electrode and a fourth electrode, wherein the second bottom electrode is located below the light-sensitive layer, and the top electrode extends to the light Above the sensitive layer.

A further embodiment of the present invention provides a method of fabricating a display unit, including forming a pixel electrode, at least a first bottom electrode, and a second bottom electrode, the second bottom electrode being formed simultaneously with the first bottom electrode, or a second bottom electrode is formed simultaneously with the pixel electrode; an insulating layer is formed to cover the first bottom electrode, the second bottom electrode, and a partial region of the pixel electrode; and a channel layer and a light sensitive layer are simultaneously formed on the insulating layer The channel layer is located above the first bottom electrode, and the light sensitive layer is located above the second bottom electrode; simultaneously forming a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode Contacting the channel layer, the third electrode and the fourth electrode are in contact with the light sensitive layer; forming a display medium on the pixel electrode; and forming a top electrode on the display medium, wherein the top electrode extends above the light sensitive layer.

According to still another embodiment of the present invention, a double-sided sensing touch display panel includes a substrate, a plurality of scanning lines, a plurality of data lines, a plurality of pixels, and a plurality of double-sided sensing photoelectric arrays arranged in an array. element. The scan line and the data line are arranged on the substrate, wherein the scan line is interlaced with the data line, and a plurality of pixel areas are defined on the substrate; the pixels are arranged in the pixel area, respectively corresponding to the scan line and the corresponding data The wire is electrically connected; the double-sided sensing type photovoltaic element is disposed on the substrate.

Another embodiment of the present invention provides a double-sided sensing touch display panel including a substrate, a plurality of scanning lines, a plurality of data lines, a plurality of pixels, and a plurality of top surface sensing photoelectric arrays arranged in an array. The element and the plurality of bottom surface sensing type photovoltaic elements arranged in an array. The scan line and the data line are arranged on the substrate, wherein the scan line is interlaced with the data line, and a plurality of pixel areas are defined on the substrate; the pixels are arranged in the pixel area, respectively corresponding to the scan line and the corresponding data The line is electrically connected; the top surface and the bottom surface sensing type photoelectric elements are all disposed on the substrate.

In order to make the above-described features of the present invention more comprehensible, the following detailed description of the embodiments will be described in detail below.

[First Embodiment]

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic cross-sectional view showing a photovoltaic element according to a first embodiment of the present invention. Referring to FIG. 1, the photovoltaic device 100 of the present embodiment is suitable for being fabricated on a substrate SUB. The photovoltaic device 100 includes a transparent bottom electrode 110, a light sensitive layer 120, a patterned dielectric layer 130, and a first electrode 140S. a second electrode 140D and a transparent top electrode 150. The light sensitive layer 120 is disposed above the transparent bottom electrode 110, and the patterned dielectric layer 130 covers the light sensitive layer 120. The patterned dielectric layer 130 has two contact openings 130a, and the contact openings 130a respectively expose portions of the light sensitive layer 120. The first electrode 140S and the second electrode 140D are disposed on a partial region of the patterned dielectric layer 130 and the light sensitive layer 120 exposed by the two contact openings 130a. The transparent top electrode 150 is located above the light sensitive layer 120. It should be noted that the patterned dielectric layer 130 in this embodiment is a selective component. In other structures of the photovoltaic device 100, the patterned dielectric layer 130 may not be required.

The photovoltaic element 100 of the present embodiment is, for example, a photoelectric crystal. When the photoelectric element is a photoelectric crystal, the function of the transparent bottom electrode 110 corresponds to a transparent bottom gate, and the functions of the first electrode 140S and the second electrode 140D correspond to the source and the drain, and the function of the transparent top electrode 150 is equivalent to transparency. Top gate.

In this embodiment, the material of the transparent bottom electrode 110 may include Transparent Conductive Oxide (TCO). In detail, the material of the transparent bottom electrode 110 is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like. The material of the light sensitive layer 120 is, for example, amorphous germanium ( a- Si) or other suitable semiconductor material. It should be noted that the thickness of the light sensitive layer 120 may be, for example, between 100 nm and 200 nm.

The material of the patterned dielectric layer 130 includes tantalum nitride (SiNx), yttrium oxide (SiOx) or other suitable dielectric materials. In the present embodiment, the patterned dielectric layer 130 may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the patterned dielectric layer 130 is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

In the above, the material of the first electrode 140S and the second electrode 140D of the embodiment includes a metal. For example, the material of the first electrode 140S and the second electrode 140D is, for example, a stack of three layers of metal, such as titanium/aluminum/titanium (Ti/Al/Ti), molybdenum/aluminum/molybdenum (Mo/Al/Mo). Metal laminates such as chromium/aluminum/chromium (Cr/Al/Cr) and molybdenum/aluminum/titanium (Mo/Al/Ti). Of course, this embodiment does not limit that the first electrode 140S and the second electrode 140D must be composed of a stack of three layers of metal. For example, the first electrode 140S and the second electrode 140D may be titanium, aluminum, molybdenum, chrome metal layers or other suitable single conductive materials. In addition, the material of the transparent top electrode 150 of the embodiment may include Transparent Conductive Oxide (TCO). In detail, the material of the transparent top electrode 150 is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like.

As can be seen from FIG. 1, the photovoltaic device 100 of the present embodiment may further include an insulating layer 160 covering the transparent bottom electrode 110, and the photo-sensitive layer 120 is disposed on the insulating layer 160. Similarly, the material of the insulating layer 160 includes tantalum nitride (SiNx), yttrium oxide (SiOx) or other suitable dielectric material. In the present embodiment, the insulating layer 160 may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the insulating layer 160 is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

The photovoltaic element 100 of the present embodiment may further include a protective layer 170 covering the first electrode 140S, the second electrode 140D and the patterned dielectric layer 130, wherein the transparent top electrode 150 is disposed on the protective layer 170. In this embodiment, the material of the protective layer 170 includes tantalum nitride (SiNx) or tantalum oxide (SiOx). For example, the protective layer 170 may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the protective layer 170 is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

In order to further reduce the contact resistance between the first electrode 140S and the light sensitive layer 120 and the contact resistance between the second electrode 140D and the light sensitive layer 120, the photovoltaic element of the embodiment may further include a ohmic contact layer. 180S, 180D, wherein the ohmic contact layer 180S is disposed between the first electrode 140S and the light sensitive layer 120, and the ohmic contact layer 180D is disposed between the second electrode 140D and the light sensitive layer 120. In the present embodiment, the ohmic contact layer 180S, 180D, for example, made of n ⁺ type doping of microcrystalline silicon ^{(n + doped micro-crystalline Si} ), n + type doping of MoSi, of n ⁺ type doped CrSi , n ⁺ type doped TiSi, and the like.

Since the photovoltaic element 100 of the present embodiment has the transparent bottom electrode 110 and the transparent top electrode 150, the light L can penetrate the transparent bottom electrode 110 and the transparent top electrode 150 to illuminate the light sensitive layer 120. In other words, the light sensitive layer 120 has two sides. Sensing function. In addition, since the light sensitive layer 120 is controlled by the two electrodes (ie, the transparent bottom electrode 110 and the transparent top electrode 150), the light sensitive layer 120 may have a large thickness, in the case where the light sensitive layer 120 is thick. The sensing sensitivity of the photovoltaic element 100 can also be improved to some extent. Furthermore, since the photo-electric element 100 has two electrodes (ie, the transparent bottom electrode 110 and the transparent top electrode 150), the photo-electric element 100 has very good sensing sensitivity and is less prone to threshold voltage shift ( _Vth shift). With a breakdown.

[Second embodiment]

The photoelectric element 100 mentioned in the first embodiment can be further applied to a display unit (such as a display panel with a touch function or a display panel with an image scanning function), and the display unit will be hereinafter combined with FIG. 2A to FIG. 2G. The manufacturing method is described in detail.

2A to 2G are schematic diagrams showing a manufacturing process of a display unit according to a second embodiment of the present invention. Referring to FIG. 2A, a transparent conductive layer TC is formed on a substrate SUB. The transparent conductive layer TC includes a second bottom electrode BG2 and a pixel electrode PE. In this embodiment, the material of the transparent conductive layer TC includes a transparent conductive oxide. In detail, the material of the transparent conductive layer TC may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like. In other embodiments, before the transparent conductive layer TC is formed, a buffer layer B may be formed on the substrate SUB. The material of the buffer layer B includes tantalum nitride (SiNx), yttrium oxide (SiOx) or other suitable medium. Electrical material. In the present embodiment, the buffer layer B may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the buffer layer B is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

Next, referring to FIG. 2B, a first dielectric layer DI1 is formed on the substrate SUB to cover the transparent conductive layer TC. In this embodiment, the material of the first dielectric layer DI1 includes tantalum nitride (SiNx), yttrium oxide (SiOx) or other suitable dielectric materials. For example, the first dielectric layer DI1 may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the first dielectric layer DI1 is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

After the first dielectric layer DI1 is formed, a patterned conductive layer C is formed on the first dielectric layer DI1. The patterned conductive layer C includes one or more first bottom electrodes BG1. A bottom electrode BG1 will be described as an example. In this embodiment, the patterned conductive layer C may further include a capacitor lower electrode E1. Generally, the material of the patterned conductive layer C includes a metal, which may be a single layer metal or a multilayer metal stack. For example, the material of the patterned conductive layer C is, for example, a laminate of three layers of metal, such as titanium/aluminum/titanium (Ti/Al/Ti), molybdenum/aluminum/molybdenum (Mo/Al/Mo), chromium/aluminum. /Metal laminate of chromium (Cr/Al/Cr), molybdenum/aluminum/titanium (Mo/Al/Ti). Of course, this embodiment does not limit that the patterned conductive layer C must be composed of a stack of three layers of metal. For example, the patterned conductive layer C may be titanium/aluminum/molybdenum/chromium (Ti/Al/Mo/Cr).

Referring to FIG. 2C, an insulating layer GI is formed to cover the first bottom electrode BG1, and a semiconductor layer (not shown) and a second dielectric layer (not shown) are sequentially formed on the insulating layer GI. And patterning the semiconductor layer and the second dielectric layer to form the channel layer CH and the light sensitive layer PS and a patterned dielectric layer DI2 over the channel layer CH and the light sensitive layer PS, wherein the channel layer CH is sensitive to light The material of the layer PS may be the same, the channel layer CH is located above the first bottom electrode BG1, and the light sensitive layer PS is located above the second bottom electrode BG2. In this embodiment, the material of the insulating layer GI includes tantalum nitride (SiNx), yttrium oxide (SiOx) or other suitable dielectric materials. For example, the insulating layer GI may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the insulating layer GI is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

Next, referring to FIG. 2D, the foregoing insulating layer GI, the first dielectric layer DI1, and the patterned dielectric layer DI2 are patterned to expose a partial region of the pixel electrode PE and form a first layer in the patterned dielectric layer DI2. A contact opening V1 and a second contact opening V2, wherein the first contact opening V1 exposes a partial region of the channel layer CH, and the second contact opening V2 exposes a partial region of the light sensitive layer PS.

Referring to FIG. 2E, a first electrode S1, a second electrode D1, a third electrode S2 and a fourth electrode D2 are formed at the same time, wherein the first electrode S1 and the second electrode D1 are in contact with the channel layer CH, and the third The electrode S2 and the fourth electrode D2 are in contact with the light sensitive layer PS. In detail, the first electrode S1 and the second electrode D1 are respectively in contact with the channel layer CH through the first contact opening V1, and the third electrode S2 and the fourth electrode D2 are respectively in contact with the light sensitive layer PS through the second contact opening V2. . It should be noted that, while the first electrode S1, the second electrode D1, the third electrode S2, and the fourth electrode D2 are formed, the present embodiment can selectively form a capacitor upper electrode E2 above the capacitor lower electrode E1. In addition, while the first electrode S1, the second electrode D1, the third electrode S2, and the fourth electrode D2 are formed, the embodiment may also selectively form the patterned dielectric layer DI2 above the first bottom electrode BG1. A top electrode TG1 is disposed between the first bottom electrode BG1 and the first top electrode TG1.

It should be noted that before the first electrode S1, the second electrode D1, the third electrode S2, and the fourth electrode D2 are formed, the first electrode S1, the second electrode D1, the third electrode S2, and the fourth electrode D2 may be simultaneously An ohmic contact layer OC is formed below.

After the first electrode S1, the second electrode D1, the third electrode S2, and the fourth electrode D2 are formed, the thin film transistor TFT and the photo element PT are initially fabricated.

Referring to FIG. 2F, a protective layer PV is formed to cover the first electrode S1, the second electrode D1, the third electrode S2, the fourth electrode D2, and the patterned dielectric layer DI2, wherein the protective layer PV exposes the pixel electrode PE. Part of the area. In this embodiment, the material of the protective layer PV includes tantalum nitride (SiNx), yttrium oxide (SiOx) or other suitable dielectric materials. For example, the protective layer PV may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the protective layer PV is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

Referring to FIG. 2G, a display medium DM is formed on the pixel electrode PE, and a top electrode TE is formed on the display medium DM. The top electrode TE extends over the light sensitive layer PS to serve as the photovoltaic element PT. The second top electrode TG2. In this embodiment, the material of the top electrode TE includes a transparent conductive oxide. In detail, the material of the top electrode TE is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like.

It is to be noted that the display medium DM is, for example, an organic electroluminescent layer. However, the present invention is not limited to the material of the display medium DM, and other self-luminous materials or light valves that can be used for display can also be applied to the present invention.

Since the photovoltaic element PT of the present embodiment has a similar structure to the photovoltaic element 100 of the first embodiment, the photovoltaic element PT of the present embodiment also has very good sensing sensitivity and is less prone to threshold voltage drift (V _th shift). Crash phenomenon.

As shown in FIG. 2G, the display unit 200 of the present embodiment is adapted to be disposed on the substrate SUB, and the display unit 200 includes a pixel P, a top electrode TE, a display medium DM, and a photo element PT, wherein the pixel P includes at least one thin film The crystal TFT and the pixel electrode PE include a channel layer CH, a first bottom electrode BG1, a first electrode S1 and a second electrode D1, and the pixel electrode PE is electrically connected to the second electrode D1. In addition, the photo-electric element PT includes the photo-sensitive layer PS, the second bottom electrode BG2, the third electrode S2, and the fourth electrode D2, wherein the material of the second bottom electrode BG2, the top electrode TE, and the pixel electrode PE can be transparent. A conductive material, and the top electrode TE extends above the light sensitive layer PS. It is to be noted that the pixel P of the present embodiment has a function of double-sided illumination, and the photoelectric element PT has a function of double-sided sensing.

3 is a cross-sectional view showing another display unit according to a second embodiment of the present invention. The display unit 200a of the present embodiment is similar to the foregoing display unit 200, but the main difference between the two is that the photoelectric element PT in the display unit 200a further includes an opaque top electrode TG located above the light sensitive layer PS, and the opaque top The electrode TG is located between the third electrode S2 and the fourth electrode D2. It should be noted that the opaque top electrode TG can be fabricated together with the first electrode S1, the second electrode D1, the third electrode S2, and the fourth electrode D2. Therefore, the opaque top electrode TG, the first electrode S1, and the second electrode D1 are formed. The materials of the third electrode S2 and the fourth electrode D2 will be the same.

As described above, the pixel P of the present embodiment has a function of double-sided light emission, and the photovoltaic element PT has only a function of single-sided sensing.

[Third embodiment]

4A to 4G are schematic diagrams showing a manufacturing process of a display unit according to a third embodiment of the present invention. Referring to FIG. 4A to FIG. 4G, the manufacturing method of the display unit 200b (shown in FIG. 4G) of the present embodiment is similar to that disclosed in the second embodiment, and the main difference lies in the method for forming the second bottom electrode BG2. 4A to 4B are shown. The following will be described with respect to the main differences in conjunction with FIGS. 4A and 4B. The process steps in FIGS. 4C to 4G are similar to the process steps in FIGS. 2C to 2G, and thus will not be repeated here.

First, referring to FIG. 4A, a transparent conductive layer TC is formed on a substrate SUB. The transparent conductive layer TC includes a pixel electrode PE. In this embodiment, the material of the transparent conductive layer TC includes a transparent conductive oxide. In detail, the material of the transparent conductive layer TC is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like. In other embodiments, before the transparent conductive layer TC is formed, a buffer layer B may be formed on the substrate SUB. The material of the buffer layer B includes tantalum nitride (SiNx), yttrium oxide (SiOx) or other suitable medium. Electrical material. In the present embodiment, the buffer layer B may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the buffer layer B is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

Next, referring to FIG. 4B, a first dielectric layer DI1 is formed on the substrate SUB to cover the transparent conductive layer TC. In this embodiment, the material of the first dielectric layer DI1 includes tantalum nitride (SiNx), yttrium oxide (SiOx) or other suitable dielectric materials. For example, the first dielectric layer DI1 may be composed of a single layer of dielectric material or a plurality of layers of dielectric materials stacked on each other, such as a tantalum nitride/yttria (SiNx/SiOx) stack. In addition, the material of the first dielectric layer DI1 is, for example, an organic dielectric layer or an organic-inorganic hybrid dielectric layer.

After forming the first dielectric layer DI1, a patterned conductive layer C is formed on the first dielectric layer DI1, and the patterned conductive layer C includes one or more first bottom electrodes BG1 and one or more second bottoms. In the present embodiment, the electrode BG2 is described by taking two first bottom electrodes BG1 and one second bottom electrode BG2 as an example.

In this embodiment, the patterned conductive layer C may further include a capacitor lower electrode E1. Generally, the material of the patterned conductive layer C includes a metal, which may be a single layer metal or a multilayer metal stack. For example, the material of the patterned conductive layer C is, for example, a laminate of three layers of metal, such as titanium/aluminum/titanium (Ti/Al/Ti), molybdenum/aluminum/molybdenum (Mo/Al/Mo), chromium/aluminum. /Metal laminate of chromium (Cr/Al/Cr), molybdenum/aluminum/titanium (Mo/Al/Ti). Of course, this embodiment does not limit that the patterned conductive layer C must be composed of a stack of three layers of metal. For example, the patterned conductive layer C may be titanium/aluminum/molybdenum/chromium (Ti/Al/Mo/Cr). As is clear from FIG. 4B, since the second bottom electrode BG2 is an opaque bottom electrode, the photovoltaic element PT of the present embodiment has only a single-sided sensing function.

FIG. 5 is a cross-sectional view showing another display unit according to a third embodiment of the present invention. The display unit 200c of this embodiment is similar to the display unit 200 of FIG. 2G, but the main difference is that the top electrode TE in the display unit 200c is an opaque top electrode. It is obvious that the photovoltaic element PT in the display unit 200c also has only a single-sided sensing function.

Fourth Embodiment

Figure 6 is a cross-sectional view showing a display unit in accordance with a fourth embodiment of the present invention. Referring to FIG. 6, the display unit 200d of the present embodiment is similar to the display unit 200c of FIG. 5, but the main difference is that the photoelectric element PT in the display unit 200d further includes an opaque top located above the light sensitive layer PS. The electrode TG and the opaque top electrode TG are located between the third electrode S2 and the fourth electrode D2. In this embodiment, the opaque top electrode TG can be fabricated together with the first electrode S1, the second electrode D1, the third electrode S2, and the fourth electrode D2. Therefore, the opaque top electrode TG, the first electrode S1, and the second electrode The materials of D1, third electrode S2, and fourth electrode D2 will be the same.

In summary, the optoelectronic components of the above embodiments can be integrated with existing display panels for touch or image scanning, and the optoelectronic components can be compatible with the existing display panel processes. Further, the photovoltaic element of the present invention has superior element characteristics.

[Fifth Embodiment]

The foregoing first to fourth embodiments have been described in detail with respect to the single-sided sensing type photovoltaic element (including the top surface sensing type photovoltaic element and the bottom surface sensing type photovoltaic element) and the double-sided sensing type photovoltaic element PT, This embodiment will explain the application of different types of photovoltaic elements PT in a double-sided sensing touch display panel.

FIG. 7 is a schematic diagram of a double-sided sensing touch display panel according to a fifth embodiment of the present invention. Referring to FIG. 7 , the double-sided sensing touch display panel 300 of the present embodiment has a double-sided sensing function, and the user can input through the touch mode on the two main surfaces of the double-sided sensing touch display panel 300 . instruction. The double-sided sensing touch display panel 300 includes a substrate 310, a plurality of scan lines 320 connected to a gate driver, a plurality of data lines 330 connected to a source driver, and a plurality of The pixel 340 and a plurality of double-sided sensing type photovoltaic elements 350 arranged in an array. The scan line 320, the data line 330, and the double-sided sensing type photovoltaic element 350 are all disposed on the substrate 310, and the data line 330 is interleaved with the scan line 320 to define a plurality of pixel regions on the substrate 310. In addition, the pixels 340 are disposed in the pixel area, and each pixel 340 is electrically connected to the corresponding scan line 320 and the corresponding data line 330. Basically, the arrangement of the double-sided sensing type photovoltaic element 350 has enabled the double-sided sensing touch display panel 300 to have the function of double-sided sensing, but in this embodiment, the designer can selectively on the substrate 310. A plurality of top surface sensing type photovoltaic elements 360 arranged in an array and/or a plurality of bottom surface sensing type photovoltaic elements 370 arranged in an array are provided. In detail, the double-sided sensing touch display panel 300 can have both the double-sided sensing type photoelectric element 350 and the top surface sensing type photoelectric element 360, or the double-sided sensing touch display panel 300 can also have double The surface sensing type photovoltaic element 350 and the bottom surface sensing type photovoltaic element 370. Of course, the double-sided sensing touch display panel 300 can have both the double-sided sensing type photovoltaic element 350, the top surface sensing type photovoltaic element 360, and the bottom surface sensing type photovoltaic element 370.

In the present embodiment, the double-sided sensing touch display panel 300 may not have the double-sided sensing type photovoltaic element 350, but only the top surface sensing type photovoltaic element 360 and the bottom surface sensing type photovoltaic element 370.

In view of the above, regardless of the type of photovoltaic element (350, 360, 370), it can transmit its sensed signal to the read-out IC through the read-out lines. , to facilitate the interpretation of the signal. In addition, the arrangement of the optoelectronic components 350, 360, 370 and the required number can be moderately changed depending on the design requirements.

100. . . Optoelectronic component

110. . . Transparent bottom electrode

120. . . Light sensitive layer

130. . . Patterned dielectric layer

130a. . . Contact opening

140S. . . First electrode

140D. . . Second electrode

150. . . Transparent top electrode

160. . . Insulation

170. . . The protective layer

180S, 180D. . . Ohmic contact layer

200, 200a, 200b, 200c, 200d. . . Display unit

SUB. . . Substrate

300. . . Double-sided sensing touch display panel

310. . . Substrate

320. . . Scanning line

330. . . Data line

340. . . Pixel

350. . . Double-sided sensing type photoelectric element

360. . . Top surface sensing photoelectric element

370. . . Bottom sensing type photoelectric element

L. . . Light

-Vs, +Vd. . . Voltage

Vgs1, Vgs2. . . Voltage difference

TC. . . Transparent conductive layer

BG1. . . First bottom electrode

TG1. . . First top electrode

BG2. . . Second bottom electrode

TG2. . . Second top electrode

PE. . . Pixel electrode

B. . . The buffer layer

DI1. . . First dielectric layer

C. . . Patterned conductive layer

E1. . . Capacitor lower electrode

E2. . . Capacitor upper electrode

GI. . . Insulation

CH. . . Channel layer

PS. . . Light sensitive layer

DI2. . . Patterned dielectric layer

TFT. . . Thin film transistor

PT. . . Optoelectronic component

PV. . . The protective layer

DM. . . Display medium

TE. . . Top electrode

P. . . Pixel

TG. . . Opaque top electrode

OC. . . Ohmic contact layer

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic cross-sectional view showing a photovoltaic element according to a first embodiment of the present invention.

2A to 2G are schematic diagrams showing a manufacturing process of a display unit according to a second embodiment of the present invention.

3 is a cross-sectional view showing another display unit according to a second embodiment of the present invention.

4A to 4G are schematic diagrams showing a manufacturing process of a display unit according to a third embodiment of the present invention.

FIG. 5 is a cross-sectional view showing another display unit according to a third embodiment of the present invention.

Figure 6 is a cross-sectional view showing a display unit in accordance with a fourth embodiment of the present invention.

FIG. 7 is a schematic diagram of a double-sided sensing touch display panel according to a fifth embodiment of the present invention.

100. . . Optoelectronic component

110. . . Transparent bottom electrode

120. . . Light sensitive layer

130. . . Patterned dielectric layer

130a. . . Contact opening

140S. . . First electrode

140D. . . Second electrode

150. . . Transparent top electrode

160. . . Insulation

170. . . The protective layer

180S, 180D. . . Ohmic contact layer

L. . . Light

SUB. . . Substrate

Claims (38)

A photovoltaic element comprising: a transparent bottom electrode; a light sensitive layer disposed above the transparent bottom electrode; a first electrode and a second electrode disposed on the light sensitive layer; and a transparent top electrode located at the light sensitive Above the layer and between the first electrode and the second electrode; and a protective layer covering the first electrode and the second electrode, wherein the transparent top electrode is disposed on the protective layer and is in contact with the protective layer . The photovoltaic element according to claim 1, wherein the material of the transparent bottom electrode comprises Transparent Conductive Oxide (TCO). The photovoltaic element according to claim 1, wherein the material of the photosensitive layer comprises amorphous germanium ( a- Si). The photovoltaic device of claim 1, further comprising a patterned dielectric layer covering the light sensitive layer, wherein the patterned dielectric layer has two contact openings, and the two contact openings respectively expose the light sensitive a portion of the layer, and the first electrode and the second electrode are disposed on a portion of the patterned dielectric layer and the photo-sensitive layer exposed by the two contact openings. The photovoltaic device according to claim 4, wherein the material of the patterned dielectric layer comprises a stack of tantalum nitride (SiNx), yttrium oxide (SiOx), tantalum nitride/yttria (SiNx/SiOx). , an organic dielectric material or an organic-inorganic composite dielectric layer. The photovoltaic element according to claim 1, wherein the material of the first electrode and the second electrode comprises a metal. The photovoltaic element according to claim 1, wherein the transparent top electrode material comprises a transparent conductive oxide (TCO). The photovoltaic device of claim 1, further comprising an insulating layer covering the transparent bottom electrode, wherein the light sensitive layer is disposed on the insulating layer. The photovoltaic device according to claim 8, wherein the material of the insulating layer comprises tantalum nitride (SiNx), yttrium oxide (SiOx) tantalum nitride/yttria (SiNx/SiOx), organic dielectric The material is either an organic-inorganic composite dielectric layer. The photovoltaic device according to claim 1, wherein the material of the protective layer comprises tantalum nitride (SiNx), yttrium oxide (SiOx) tantalum nitride/yttria (SiNx/SiOx), organic dielectric The material is either an organic-inorganic composite dielectric layer. The photovoltaic device of claim 1, further comprising ohmic contact layers disposed between the first electrode and the light sensitive layer and the second electrode and the light sensitive layer between. A display unit comprising: a pixel comprising at least one thin film transistor and a pixel electrode, the thin film transistor comprising a channel layer, a first bottom electrode, a first electrode and a second electrode, wherein the pixel a bottom electrode is located below the channel layer, and the pixel electrode is electrically connected to the second electrode; a top electrode is located above the pixel electrode; a display medium is located between the pixel electrode and the top electrode; a photovoltaic element disposed on the substrate, the photovoltaic element comprising a light a sensitive layer, a second bottom electrode, a third electrode and a fourth electrode, wherein the second bottom electrode is located below the light sensitive layer, and the top electrode extends above the light sensitive layer; and a protective layer, The protective layer is a continuous structure, wherein the protective layer continuously covers the first electrode, the second electrode, the third electrode and the fourth electrode. The display unit according to claim 12, wherein the pixel electrode is a transparent pixel electrode, the top electrode is a transparent top electrode, and the second bottom electrode is a transparent bottom electrode. The display unit of claim 12, wherein the photoelectric element further comprises an opaque top electrode above the light sensitive layer, and the opaque top electrode is located between the third electrode and the fourth electrode. The display unit according to claim 14, wherein the opaque top electrode, the first electrode, the second electrode, the third electrode and the fourth electrode are made of the same material. The display unit according to claim 12, wherein the pixel electrode is a transparent pixel electrode, the top electrode is a transparent top electrode, and the second bottom electrode is an opaque bottom electrode. The display unit according to claim 12, wherein the pixel electrode is a transparent pixel electrode, the top electrode is an opaque top electrode, and the second bottom electrode is a transparent bottom electrode. The display unit according to claim 17, wherein the photoelectric element further comprises an opaque top electrode above the light sensitive layer, and the opaque top electrode is located between the third electrode and the fourth electrode. a display unit as described in claim 18, wherein The material of the opaque top electrode, the first electrode, the second electrode, the third electrode and the fourth electrode is the same. The display unit of claim 12, wherein the display medium comprises an organic electroluminescent layer. The display unit as described in claim 12, wherein the material of the channel layer is the same as the material of the light sensitive layer. The display unit according to claim 12, wherein the first electrode, the second electrode, the third electrode and the fourth electrode are made of the same material. The display unit of claim 12, wherein the thin film transistor further comprises a patterned dielectric layer, wherein the patterned dielectric layer has a plurality of first contact openings, and the first contact openings A portion of the channel layer is exposed, and the first electrode and the second electrode are in contact with the channel layer through the first contact openings. The display unit of claim 12, wherein the photovoltaic element further comprises a patterned dielectric layer, wherein the patterned dielectric layer has a plurality of second contact openings, and the second contact openings are exposed a portion of the photo-sensitive layer, and the third electrode and the fourth electrode are in contact with the photo-sensitive layer through the second contact openings. The display unit of claim 12, wherein the protective layer exposes a partial region of the pixel electrode. The display unit according to claim 12, wherein the material of the second bottom electrode is the same as the material of the pixel electrode. The display unit according to claim 12, wherein the material of the second bottom electrode is the same as the material of the first bottom electrode. A manufacturing method of a display unit, comprising: forming a pixel electrode, at least one first bottom electrode, and a second bottom electrode, wherein the second bottom electrode is formed simultaneously with the first bottom electrode, or the second bottom electrode Forming an insulating layer simultaneously with the pixel electrode; forming an insulating layer to cover the first bottom electrode, the second bottom electrode, and a partial region of the pixel electrode; simultaneously forming a channel layer and a light sensitive layer on the insulating layer a layer, wherein the channel layer is located above the first bottom electrode, and the light sensitive layer is located above the second bottom electrode; and simultaneously forming a first electrode, a second electrode, a third electrode and a fourth electrode, wherein The first electrode and the second electrode are in contact with the channel layer, and the third electrode and the fourth electrode are in contact with the light sensitive layer; forming a protective layer to continuously cover the first electrode and the second electrode, The third electrode and the fourth electrode, wherein the protective layer is a continuous structure; a display medium is formed on the pixel electrode; and a top electrode is formed on the display medium, wherein the top electrode extends to Above the light-sensitive layer. The method for manufacturing a display unit according to claim 28, wherein when the second bottom electrode is formed simultaneously with the pixel electrode, the pixel electrode, the first bottom electrode and the second bottom electrode The forming method includes: forming a transparent conductive layer on the substrate, the transparent conductive layer comprising the second bottom electrode and the pixel electrode; forming a first dielectric layer on the substrate to cover the transparent conductive layer; Forming a patterned conductive layer on the first dielectric layer, the patterned conductive layer comprising the first bottom electrode. The method for manufacturing a display unit according to claim 28, wherein the channel layer, the light sensitive layer, the first electrode, the second electrode, the third electrode, and the fourth electrode are formed by: Forming a semiconductor layer and a second dielectric layer on the insulating layer; patterning the semiconductor layer and the second dielectric layer to form the channel layer and the light sensitive layer and covering the channel layer a patterned dielectric layer on the light sensitive layer; and patterning the insulating layer, the first dielectric layer, and the patterned dielectric layer to expose a portion of the pixel electrode, and patterning A plurality of first contact openings and a plurality of second contact openings are formed in the electrical layer, wherein the first contact openings expose partial regions of the channel layer, and the second contact openings expose portions of the light sensitive layer. The method of manufacturing a display unit according to claim 28, wherein the pixel electrode, the first bottom electrode and the second bottom electrode are formed when the second bottom electrode system is formed simultaneously with the first bottom electrode The method for forming includes: forming a transparent conductive layer on the substrate, the transparent conductive layer comprising the pixel electrode; forming a first dielectric layer on the substrate to cover the transparent conductive layer; and patterning the first dielectric layer And an insulating layer to expose a portion of the pixel electrode; and forming a patterned conductive layer on the first dielectric layer, the patterning The electrical layer includes the first bottom electrode and the second bottom electrode. The method for manufacturing a display unit according to claim 31, wherein the channel layer, the light sensitive layer, the first electrode, the second electrode, the third electrode, and the fourth electrode are formed by: Forming a semiconductor layer and a second dielectric layer on the insulating layer; patterning the semiconductor layer and the second dielectric layer to form the channel layer and the light sensitive layer and covering the channel layer a patterned dielectric layer on the light sensitive layer; and patterning the insulating layer, the first dielectric layer, and the patterned dielectric layer to expose a portion of the pixel electrode, and patterning A plurality of first contact openings and a plurality of second contact openings are formed in the electrical layer, wherein the first contact openings expose partial regions of the channel layer, and the second contact openings expose portions of the light sensitive layer. The method of manufacturing a display unit according to claim 30, wherein the protective layer covers the patterned dielectric layer and exposes a partial region of the pixel electrode. A double-sided sensing touch display panel includes: a substrate; a plurality of scanning lines disposed on the substrate; a plurality of data lines disposed on the substrate and interlaced with the scanning lines, the scanning lines and the data a plurality of pixel regions are defined on the substrate; a plurality of pixels are disposed in the pixel regions, and each of the pixels is electrically connected to the corresponding scan line and the corresponding data line, and the pixels are respectively connected to each other. Including at least one thin film transistor and a pixel electrode, the thin film transistor includes a channel layer, a first bottom electrode, a first electrode and a second electrode, wherein The first bottom electrode is located below the channel layer, and the pixel electrode is electrically connected to the second electrode; a top electrode is located above the pixel electrodes; and a plurality of double-sided sensing type photoelectric elements arranged in an array Disposed on the substrate, each of the double-sided sensing type photovoltaic elements includes a light sensitive layer, a second bottom electrode, a third electrode and a fourth electrode, wherein the second bottom electrode is located below the light sensitive layer And the top electrode extends above the light sensitive layer; and a protective layer, the protective layer is a continuous structure, and the protective layer continuously covers the first electrode, the second electrodes, and the third electrodes The fourth electrodes, wherein the top electrode is a transparent top electrode and the second bottom electrodes are transparent bottom electrodes. The double-sided sensing touch display panel according to claim 34, further comprising a plurality of top surface sensing type photoelectric elements arranged in an array, disposed on the substrate. The double-sided sensing touch display panel according to claim 35, further comprising a plurality of bottom-surface sensing type photovoltaic elements arranged in an array, disposed on the substrate. The double-sided sensing touch display panel according to claim 34, further comprising a plurality of bottom-surface sensing type photovoltaic elements arranged in an array, disposed on the substrate. A double-sided sensing touch display panel includes: a substrate; a plurality of scanning lines disposed on the substrate; and a plurality of data lines disposed on the substrate and interlaced with the scanning lines, The scan lines and the data lines define a plurality of pixel regions on the substrate; a plurality of pixels are disposed in the pixel regions, and each of the pixels is respectively associated with a corresponding scan line and a corresponding data line. Optionally, each of the pixels includes at least one thin film transistor and a pixel electrode, the thin film transistor including a channel layer, a first bottom electrode, a first electrode and a second electrode, wherein the first bottom electrode Located below the channel layer, the pixel electrode is electrically connected to the second electrode; a top electrode is located above the pixel electrodes; and a plurality of top surface sensing photoelectric elements arranged in an array are disposed on the substrate Each of the top sensing-type photovoltaic elements includes a first light-sensitive layer, a second bottom electrode, a third electrode, and a fourth electrode, wherein the second bottom electrode is located below the first light-sensitive layer. And the top electrode extends above the first light sensitive layer; a plurality of bottom surface sensing type photovoltaic elements arranged in an array are disposed on the substrate, and each of the bottom surface sensing type photovoltaic elements comprises a second light sensitive layer, a first Three bottom electrode, one fifth electrode a sixth electrode and an opaque top electrode above the second light sensitive layer, wherein the opaque top electrode is located between the fifth electrode and the sixth electrode, wherein the third bottom electrode is located in the second light sensitive layer Bottom, and the top electrode extends above the second light sensitive layer; and a protective layer, the protective layer is a continuous structure, and the protective layer continuously covers the first electrode, the second electrode, the third electrode The fourth electrode, the fifth electrode and the sixth electrode, wherein the top electrode is a transparent top electrode, the second bottom electrodes are opaque bottom electrodes, and the third bottom electrodes are transparent bottom electrodes.