TWI425285B - Liquid crystal display panel and thin film transistor substrate thereof - Google Patents
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本發明是有關於一種液晶顯示裝置及其薄膜電晶體基板,且特別是有關於一種具有周圍線路之液晶顯示裝置及其薄膜電晶體基板。 The present invention relates to a liquid crystal display device and a thin film transistor substrate thereof, and more particularly to a liquid crystal display device having a peripheral line and a thin film transistor substrate therefor.
液晶顯示面板具有「輕、薄、短、小」的優點,各種電子裝置均可以很容易地搭載液晶顯示面板,而使液晶顯示面板逐漸成為市場上的主流。 The liquid crystal display panel has the advantages of "light, thin, short, and small", and various electronic devices can easily carry the liquid crystal display panel, and the liquid crystal display panel is gradually becoming the mainstream in the market.
液晶顯示面板主要係由薄膜電晶體基板、彩色濾光片基板及液晶層所組成。液晶層係設置於薄膜電晶體基板及彩色濾光片基板之間。由於液晶層擁有黏性(viscosity)、彈性(elasticity)和極化性(polarizalility)的性質,因此施加偏壓時,就會改變偏光的特性。光線穿越液晶層時,將具有不同程度的亮度。不同亮度的光線穿越彩色濾光片基板時,即可組成一幅畫面。 The liquid crystal display panel is mainly composed of a thin film transistor substrate, a color filter substrate and a liquid crystal layer. The liquid crystal layer is disposed between the thin film transistor substrate and the color filter substrate. Since the liquid crystal layer possesses the properties of viscosity, elasticity, and polarizalility, the characteristics of the polarized light are changed when a bias voltage is applied. When the light passes through the liquid crystal layer, it will have different degrees of brightness. When light of different brightness passes through the color filter substrate, a picture can be formed.
液晶層係透過封膠將液晶層密封,以防止液晶層的外洩。一般而言,不能有空氣侵入液晶層,否則將嚴重影響成像品質。尤其是當封膠設置在高低不平的表面時,封膠可能會無法完全密合此表面,而外界的氣壓也容易利用高低不平的表面將氣體侵入液晶層的現象。因此,業界皆不斷致力改善元件上的設計或製程上的設計來減少空氣侵入液晶層的現象。 The liquid crystal layer seals the liquid crystal layer through the sealant to prevent leakage of the liquid crystal layer. In general, there is no air intrusion into the liquid crystal layer, which will seriously affect the image quality. In particular, when the sealant is placed on a rugged surface, the sealant may not completely adhere to the surface, and the external air pressure may easily utilize the uneven surface to invade the liquid crystal layer. Therefore, the industry is constantly striving to improve the design of the components or the design of the process to reduce the phenomenon of air intrusion into the liquid crystal layer.
本發明係有關於一種液晶顯示裝置及其薄膜電晶體基板,其利用周圍線路的設計,使得封膠可以設置於高低不平的周圍線路上,也可有效地防止空氣侵入液晶層之現象發生。 The invention relates to a liquid crystal display device and a thin film transistor substrate thereof, which utilizes the design of the surrounding lines, so that the sealant can be disposed on the surrounding circuit with high and low unevenness, and the phenomenon that air invades the liquid crystal layer can be effectively prevented.
根據本發明之第一方面,提出一種液晶顯示面板。液晶顯示面板包括一薄膜電晶體基板、一彩色濾光片基板、一液晶層及一 封膠。薄膜電晶體基板包括一周圍線路。周圍線路設置於薄膜電晶體基板之周圍。周圍線路包括二第一導線及一第二導線。此些第一導線實質上相互平行。此些第一導線之其中之一具有一第一連接點,此些第一導線之其中之另一具有一第二連接點。第二導線至少連接於第一連接點及第二連接點。第一連接點及第二連接點之一連線傾斜於此些第一導線。液晶層設置於薄膜電晶體基板及彩色濾光片基板之間。封膠環繞液晶層,並覆蓋部分之周圍線路。 According to a first aspect of the invention, a liquid crystal display panel is proposed. The liquid crystal display panel comprises a thin film transistor substrate, a color filter substrate, a liquid crystal layer and a Plastic closures. The thin film transistor substrate includes a surrounding line. The surrounding lines are disposed around the thin film transistor substrate. The surrounding circuit includes two first wires and one second wire. The first wires are substantially parallel to each other. One of the first wires has a first connection point, and the other of the first wires has a second connection point. The second wire is connected to at least the first connection point and the second connection point. One of the first connection point and the second connection point is inclined to the first wires. The liquid crystal layer is disposed between the thin film transistor substrate and the color filter substrate. The encapsulant surrounds the liquid crystal layer and covers the surrounding lines.
根據本發明之一第二方面,提出一種薄膜電晶體基板。薄膜電晶體基板包括一周圍線路。周圍線路設置於薄膜電晶體基板之周圍。周圍線路包括二第一導線及一第二導線。此些第一導線實質上相互平行。此些第一導線之其中之一具有一第一連接點,此些第一導線之其中之另一具有一第二連接點。第二導線至少連接於第一連接點及第二連接點。第一連接點及第二連接點之一連線傾斜於該些第一導線。 According to a second aspect of the invention, a thin film transistor substrate is provided. The thin film transistor substrate includes a surrounding line. The surrounding lines are disposed around the thin film transistor substrate. The surrounding circuit includes two first wires and one second wire. The first wires are substantially parallel to each other. One of the first wires has a first connection point, and the other of the first wires has a second connection point. The second wire is connected to at least the first connection point and the second connection point. One of the first connection point and the second connection point is oblique to the first wires.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下: In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:
請參照第1圖,其繪示本發明第一實施例之顯示面板1000之示意圖。顯示面板1000包括一薄膜電晶體基板100、一彩色濾光片基板200、一液晶層300及一封膠400。液晶層300設置於薄膜電晶體基板100及彩色濾光片基板200之間。封膠400環繞液晶層300並設置薄膜電晶體基板100及彩色濾光片基板200之間。 Please refer to FIG. 1 , which is a schematic diagram of a display panel 1000 according to a first embodiment of the present invention. The display panel 1000 includes a thin film transistor substrate 100, a color filter substrate 200, a liquid crystal layer 300, and an adhesive 400. The liquid crystal layer 300 is disposed between the thin film transistor substrate 100 and the color filter substrate 200. The encapsulant 400 surrounds the liquid crystal layer 300 and is disposed between the thin film transistor substrate 100 and the color filter substrate 200.
請同時參照第1圖及第2圖,第2圖繪示第1圖之薄膜電晶體基板100之俯視圖。薄膜電晶體基板100包括一周圍線路110。周圍線路110係設置於薄膜電晶體基板100之周圍,並連接至一 共同電極(common voltage electrode)。封膠400則覆蓋部分之周圍線路110。 Please refer to FIG. 1 and FIG. 2 simultaneously. FIG. 2 is a plan view showing the thin film transistor substrate 100 of FIG. 1. The thin film transistor substrate 100 includes a surrounding line 110. The surrounding line 110 is disposed around the thin film transistor substrate 100 and connected to the Common voltage electrode. The sealant 400 covers a portion of the surrounding line 110.
在製造過程中,封膠400係先塗佈於周圍電路110上。然後,再貼合薄膜電晶體基板100及彩色濾光片基板200。接著,再利用紫外光(UV light)來固化封膠400。周圍線路110之材質係為金屬,而紫外光無法穿越金屬。請參照第3圖,其繪示本發明第一實施例之周圍線路110之放大圖。為了讓紫外光可以穿越周圍線路110來固化封膠400,本實施例之周圍線路110係由多條導線所組成,例如是第3圖之第一導線111及第二導線112。本實施例之周圍線路110採用多個導線來形成時,可以幫助紫外光穿越周圍線路110,進而固化封膠400。 In the manufacturing process, the sealant 400 is first applied to the surrounding circuit 110. Then, the thin film transistor substrate 100 and the color filter substrate 200 are bonded together. Next, the sealant 400 is cured by UV light. The material of the surrounding line 110 is made of metal, and ultraviolet light cannot pass through the metal. Please refer to FIG. 3, which shows an enlarged view of the surrounding line 110 of the first embodiment of the present invention. In order to allow ultraviolet light to pass through the surrounding line 110 to cure the sealant 400, the surrounding line 110 of the present embodiment is composed of a plurality of wires, such as the first wire 111 and the second wire 112 of FIG. When the surrounding line 110 of the embodiment is formed by using a plurality of wires, it can help the ultraviolet light to pass through the surrounding line 110, thereby curing the sealant 400.
在第3圖中,周圍線路110的上側為薄膜電晶體基板100(繪示於第2圖)的外側,周圍線路110的下側則為薄膜電晶體基板100(繪示於第2圖)的內側。本實施例之第一導線111實質上相互平行。其中一條第一導線111具有一第一連接點P11,另一條第一導線111具有一第二連接點P12。第二導線112連接於第一連接點P11及第二連接點P12。第一連接點P11及第二連接點P12之一連線傾斜於第一導線111。也就是說,第一連接連點P11及第二連接點P12之連線不垂直於第一導線111。 In Fig. 3, the upper side of the surrounding line 110 is outside the thin film transistor substrate 100 (shown in Fig. 2), and the lower side of the surrounding line 110 is the thin film transistor substrate 100 (shown in Fig. 2). Inside. The first wires 111 of this embodiment are substantially parallel to each other. One of the first wires 111 has a first connection point P11, and the other first wire 111 has a second connection point P12. The second wire 112 is connected to the first connection point P11 and the second connection point P12. One of the first connection point P11 and the second connection point P12 is obliquely connected to the first wire 111. That is, the connection between the first connection point P11 and the second connection point P12 is not perpendicular to the first wire 111.
封膠400(繪示於第2圖)覆蓋於周圍線路110上時,部分的封膠400將會填入第一導線111與第二導線112之間的間隙。由於周圍線路110形成了高低不平的表面,所以封膠400可能填的不紮實。當外界氣壓較大時,氣體可能會沿著第二導線112侵入到薄膜電晶體基板100(繪示於第2圖)的內側(此現象又稱為「外衝」)。更詳細的說,本實施例之第二導線112係為不垂直於第一導線111的直線。當氣體侵入時,氣體必須沿著斜向的第二導線 112行走。透過本實施例之第二導線112在第一連接點P11與第二接點P12之連線採用傾斜式的設計,可以有效地將氣體侵入之力量降低。 When the encapsulant 400 (shown in FIG. 2) covers the surrounding line 110, a portion of the encapsulant 400 will fill the gap between the first wire 111 and the second wire 112. Since the surrounding line 110 forms a rugged surface, the encapsulant 400 may not be filled. When the outside air pressure is large, the gas may invade the inside of the thin film transistor substrate 100 (shown in FIG. 2) along the second wire 112 (this phenomenon is also referred to as "outer punch"). In more detail, the second wire 112 of the present embodiment is a straight line that is not perpendicular to the first wire 111. When the gas invades, the gas must follow the oblique second wire 112 walking. The oblique connection of the second wire 112 of the present embodiment at the connection between the first connection point P11 and the second contact point P12 can effectively reduce the force of gas intrusion.
當此第一連接點P11與第二接點P12之連線與第一導線111具有一夾角θ11時,可以有效地將氣體侵入之力量至少降低為倍。本實施例之夾角θ11小於45度,所以可以有效地將氣體侵入之力量至少降低為0.707倍。 When the line connecting the first connection point P11 and the second contact point P12 has an angle θ11 with the first wire 111, the force of gas intrusion can be effectively reduced at least twice. In the present embodiment, the angle θ11 is less than 45 degrees, so that the force of gas intrusion can be effectively reduced to at least 0.707 times.
此外,本實施例之第二導線112採用交錯排列式設計,第一導線111之內、外兩側相鄰的第二導線112不會位於第一導線111的同一垂直線上。如此一來,氣體要沿著第一導線111的內、外兩側相鄰的第二導線112侵入的困難度又更增加。 In addition, the second wires 112 of the embodiment are in a staggered arrangement, and the second wires 112 adjacent to the inner and outer sides of the first wire 111 are not located on the same vertical line of the first wires 111. As a result, the difficulty of invading the gas along the second wire 112 adjacent to the inner and outer sides of the first wire 111 is further increased.
此外,這些交錯排列的第二導線112所對應之第一連接點P11與第二接點P12之連線的傾斜方向並不相同。舉例來說,第3圖由左至右的三條第二導線112所對應之傾斜方向輪替地在變換。 In addition, the oblique directions of the lines connecting the first connection point P11 and the second contact point P12 corresponding to the staggered second wires 112 are not the same. For example, the tilting direction corresponding to the three second wires 112 from left to right in FIG. 3 is alternately changed.
就第一導線111及第二導線112之寬度設計而言,本實施例之第一導線111之寬度W11及第二導線112之寬度W12實質上相等。一方面可以兼顧到第一導線111及第二導線112的結構強度,也方便光罩的設計。 For the width design of the first wire 111 and the second wire 112, the width W11 of the first wire 111 and the width W12 of the second wire 112 of the embodiment are substantially equal. On the one hand, the structural strength of the first wire 111 and the second wire 112 can be taken into consideration, and the design of the reticle is also convenient.
就第二導線112之設置密度而言,第二導線112在平行第一導線111之方向的間距W13大於第一導線111及第二導線112之寬度W11、W12時,第二導線112可以發揮較大的阻擋效能。 In terms of the density of the second wires 112, when the pitch W13 of the second wires 112 in the direction parallel to the first wires 111 is greater than the widths W11 and W12 of the first wires 111 and the second wires 112, the second wires 112 can be used. Great blocking performance.
請參照第4圖,其繪示本發明第二實施例之周圍線路210之放大圖。本實施例之周圍線路210與第一實施例之周圍線路110不同之處在於第二導線212之設計,本實施例之第二導線212為 一折線,其餘相同之處不再重複敘述。 Referring to FIG. 4, an enlarged view of the surrounding line 210 of the second embodiment of the present invention is shown. The surrounding line 210 of this embodiment is different from the surrounding line 110 of the first embodiment in the design of the second wire 212. The second wire 212 of the embodiment is A fold line, the rest of the same points are not repeated.
如第4圖所示,第二導線212包括一第一直線L1、一第二直線L2及一第三直線L3。第一直線L1之一端連接第一連接點P21。第二直線L2之一端連接第二連接點P22。第三直線L3則連接於第一直線L1及第二直線L2。第一直線L1、第二直線L2及第三直線L3儼然形成一閃電型結構。 As shown in FIG. 4, the second wire 212 includes a first straight line L1, a second straight line L2, and a third straight line L3. One end of the first straight line L1 is connected to the first connection point P21. One end of the second straight line L2 is connected to the second connection point P22. The third straight line L3 is connected to the first straight line L1 and the second straight line L2. The first straight line L1, the second straight line L2, and the third straight line L3 form a lightning-type structure.
其中,本實施例之第一直線L1及第二直線L2傾斜於第一導線211,而第三直線L3實質上平行於第一導線211。所以氣體欲沿著第二導線212侵入時,必須依序沿著第一直線L1、第三直線L3及第二直線L2行走。第一直線L1、第三直線L3及第二直線L2的轉折處對氣體發揮了阻擋的效果,可以有效地減少外衝之現象。 The first straight line L1 and the second straight line L2 of the embodiment are inclined to the first conductive line 211, and the third straight line L3 is substantially parallel to the first conductive line 211. Therefore, when the gas is to invade along the second wire 212, it must travel along the first straight line L1, the third straight line L3, and the second straight line L2 in sequence. The turning points of the first straight line L1, the third straight line L3, and the second straight line L2 exert an effect of blocking the gas, and the phenomenon of external punching can be effectively reduced.
請參照第5圖,其繪示本發明第三實施例之周圍線路310之放大圖。本實施例之周圍線路310與第一實施例之周圍線路110不同之處在於第二導線312之設計,本實施例之第二導線212為一折線,其餘相同之處不再重複敘述。 Referring to FIG. 5, an enlarged view of the surrounding line 310 of the third embodiment of the present invention is shown. The surrounding line 310 of the present embodiment is different from the surrounding line 110 of the first embodiment in the design of the second wire 312. The second wire 212 of the embodiment is a broken line, and the rest of the same is not repeated.
如第5圖所示,第二導線312包括一第四直線L4、一第五直線L5及一第六直線L6。第四直線L4之一端連接第一連接點P31。第五直線L5之一端連接第二連接點P32。第六直線L6則連接於第四直線L4及第五直線L5。第四直線L4、第五直線L5及第六直線L6儼然形成一閃電型結構。 As shown in FIG. 5, the second wire 312 includes a fourth line L4, a fifth line L5, and a sixth line L6. One end of the fourth straight line L4 is connected to the first connection point P31. One end of the fifth straight line L5 is connected to the second connection point P32. The sixth straight line L6 is connected to the fourth straight line L4 and the fifth straight line L5. The fourth straight line L4, the fifth straight line L5, and the sixth straight line L6 form a lightning-type structure.
其中,本實施例之第四直線L4及第五直線L5傾斜於第一導線311,而第六直線L6傾斜於第一導線311。所以氣體欲沿著第二導線312侵入時,必須依序沿著第四直線L4、第六直線L6及 第五直線L5行走。第四直線L4、第六直線L6及第五直線L5的轉折處對氣體發揮了阻擋的效果,可以有效地減少外衝之現象。 The fourth line L4 and the fifth line L5 of the embodiment are inclined to the first wire 311, and the sixth line L6 is inclined to the first wire 311. Therefore, when the gas is to invade along the second wire 312, it must sequentially follow the fourth straight line L4 and the sixth straight line L6. The fifth straight line L5 walks. The turning point of the fourth straight line L4, the sixth straight line L6, and the fifth straight line L5 exerts an effect of blocking the gas, and the phenomenon of external punching can be effectively reduced.
在本實施例中,第四直線L4與第六直線L6之夾角θ31小於第四直線L4與第一導線311之夾角θ32。第五直線L5與第六直線L6之夾角θ33小於第五直線L5與第一導線311之夾角θ34。也就是說,由薄膜電晶體基板100(繪示於第2圖)的外側往內看時(圖式的上方為外側,圖式的下方為內側),第四直線L4係朝向內側延伸,接著第六直線L6卻是朝向外側延伸,然後第五直線L5則又向內側延伸。如此一來,氣體欲沿著第四直線L4、第六直線L6及第四直線L4侵入時,朝外側延伸之第六直線L6可以有效地增加阻擋的效果。 In the present embodiment, the angle θ31 between the fourth straight line L4 and the sixth straight line L6 is smaller than the angle θ32 between the fourth straight line L4 and the first wire 311. The angle θ33 between the fifth straight line L5 and the sixth straight line L6 is smaller than the angle θ34 between the fifth straight line L5 and the first wire 311. In other words, when viewed from the outside of the thin film transistor substrate 100 (shown in FIG. 2) (the upper side of the drawing is the outer side, the lower side of the drawing is the inner side), the fourth straight line L4 extends toward the inner side, and then The sixth straight line L6 extends toward the outside, and then the fifth straight line L5 extends inward. In this way, when the gas is to invade along the fourth straight line L4, the sixth straight line L6, and the fourth straight line L4, the sixth straight line L6 extending outward can effectively increase the blocking effect.
請參照第6圖,其繪示本發明第四實施例之周圍線路410之放大圖。本實施例之周圍線路410與第一實施例之周圍線路110不同之處在於第二導線412之設計,本實施例之第二導線212為一折線,其餘相同之處不再重複敘述。 Please refer to FIG. 6, which is an enlarged view of the surrounding line 410 of the fourth embodiment of the present invention. The surrounding line 410 of the present embodiment is different from the surrounding line 110 of the first embodiment in the design of the second wire 412. The second wire 212 of the embodiment is a broken line, and the rest are not repeated.
如第6圖所示,第二導線412包括一第七直線L7、一第八直線L8、一第九直線L9、一第十直線L10及一第十一直線L11。第七直線L7之一端連接第一連接點P41。第八直線L8之一端連接第二連接點P42。第九直線L9之一端連接第三連接點P43。第二連接點P42與第三連接P43點在同一條第一導線411上,但間隔一預定距離。第二連接點P42與第一連接點P41之距離D41實質上等於第三連接點P43與第一連接點P41之距離D42。也就是說,第一連接點P41位於第二連接點P42與第三連接點P43之中間位置。 As shown in FIG. 6, the second wire 412 includes a seventh straight line L7, an eighth straight line L8, a ninth straight line L9, a tenth straight line L10, and a tenth straight line L11. One end of the seventh straight line L7 is connected to the first connection point P41. One end of the eighth straight line L8 is connected to the second connection point P42. One end of the ninth straight line L9 is connected to the third connection point P43. The second connection point P42 and the third connection P43 are on the same first wire 411, but spaced apart by a predetermined distance. The distance D41 between the second connection point P42 and the first connection point P41 is substantially equal to the distance D42 between the third connection point P43 and the first connection point P41. That is, the first connection point P41 is located at a middle position between the second connection point P42 and the third connection point P43.
第十直線L10連接第七直線L7及第八直線L8。第十一直線L11連接第七直線L7及第九直線L9。其中第八直線L8、第九直線L9、第十直線L10及第十一直線L11傾斜於第一導線411,第七直線L7實質上垂直於第一導線411。第七直線L7、第八直線L8、第九直線L9、第十直線L10及第十一直線L11儼然形成一山字型結構。 The tenth straight line L10 connects the seventh straight line L7 and the eighth straight line L8. The eleventh straight line L11 connects the seventh straight line L7 and the ninth straight line L9. The eighth straight line L8, the ninth straight line L9, the tenth straight line L10, and the tenth straight line L11 are inclined to the first wire 411, and the seventh straight line L7 is substantially perpendicular to the first wire 411. The seventh straight line L7, the eighth straight line L8, the ninth straight line L9, the tenth straight line L10, and the tenth straight line L11 form a mountain-shaped structure.
藉由本實施例之結構,當氣體欲沿著第二導線412侵入時,必須依序沿著第七直線L7、第十一直線L11及第九直線L9行走,或者沿著第七直線L7、第十直線L10及第八直線L8行走。第七直線L7、第十一直線L11及第九直線L9的轉折處對氣體發揮了阻擋的效果,第七直線L7、第十直線L10及第八直線L8的轉折處也對氣體發揮了阻擋的效果,可以有效地減少外衝之現象。 With the structure of this embodiment, when the gas is to invade along the second wire 412, it must be sequentially followed along the seventh straight line L7, the tenth straight line L11, and the ninth straight line L9, or along the seventh straight line L7, The tenth straight line L10 and the eighth straight line L8 travel. The turning point of the seventh straight line L7, the tenth straight line L11, and the ninth straight line L9 exerts a blocking effect on the gas, and the turning points of the seventh straight line L7, the tenth straight line L10, and the eighth straight line L8 also block the gas. The effect can effectively reduce the phenomenon of external punching.
此外,氣體欲沿著第七直線L7侵入時,將會由第十直線L10及第十一直線L11分為兩條路徑,如此也可以有效地降低氣體侵入的力量。 Further, when the gas is to enter along the seventh straight line L7, the tenth straight line L10 and the tenth straight line L11 are divided into two paths, so that the force of gas intrusion can be effectively reduced.
在本實施例中,第十直線L10與第七直線L7之夾角θ41小於90度,第十一直線L11與第七直線L7之夾角θ42小於90度。也就是說,由薄膜電晶體基板100(繪示於第2圖)的外側往內看時(圖式的上方為外側,圖式的下方為內側),第七直線L7係朝向內側延伸,接著第十直線L10或第十一直線L11卻是朝向外側延伸,然後第八直線L8或第九直線L9則又向內側延伸。如此一來,氣體欲沿著第七直線L7、第十直線L10及第八直線L8侵入時,或者氣體欲沿著第七直線L7、第十一直線L11及第九直線L9侵入時,朝外延伸之第十直線L10及第十一直線L11可以有效地增加阻擋的效果。 In the present embodiment, the angle θ41 between the tenth straight line L10 and the seventh straight line L7 is less than 90 degrees, and the angle θ42 between the tenth straight line L11 and the seventh straight line L7 is less than 90 degrees. In other words, when viewed from the outside of the thin film transistor substrate 100 (shown in FIG. 2) (the upper side of the drawing is the outer side, the lower side of the drawing is the inner side), the seventh straight line L7 extends toward the inner side, and then The tenth straight line L10 or the tenth straight line L11 extends toward the outside, and then the eighth straight line L8 or the ninth straight line L9 extends inward. In this way, when the gas is to enter along the seventh straight line L7, the tenth straight line L10, and the eighth straight line L8, or the gas is to enter along the seventh straight line L7, the tenth straight line L11, and the ninth straight line L9, The tenth straight line L10 and the tenth straight line L11 extending outward can effectively increase the blocking effect.
請參照第7圖,其繪示本發明第五實施例之周圍線路510之放大圖。本實施例之周圍線路510與第一實施例之周圍線路110不同之處在於第二導線512之設計,本實施例之第二導線212為一折線,其餘相同之處不再重複敘述。 Referring to FIG. 7, an enlarged view of a surrounding line 510 of a fifth embodiment of the present invention is shown. The surrounding line 510 of this embodiment is different from the surrounding line 110 of the first embodiment in the design of the second wire 512. The second wire 212 of the embodiment is a broken line, and the rest of the same is not repeated.
如第7圖所示,第二導線512包括數條第十二直線L12及數條第十三直線L13。在一條第二導線512中,最靠外側的第十二直線L12之一端連接第一連接點P51,最靠內側的第十二直線L12之一端連接第二連接點P52(圖式的上方為外側,圖式的下方為內側)。此些第十二直線L12及此些第十三直線L13輪替連接。其中此些第十二直線L12實質上垂直於第一導線511,此些第十三直線L13實質上平行於第一導線511。此些第十二直線L12及此些第十三直線L13儼然形成一階梯狀結構。 As shown in FIG. 7, the second wire 512 includes a plurality of twelfth straight lines L12 and a plurality of thirteenth straight lines L13. In one of the second wires 512, one end of the outermost twelfth straight line L12 is connected to the first connection point P51, and one end of the innermost twelfth straight line L12 is connected to the second connection point P52 (the upper side of the figure is the outer side) The bottom of the figure is the inner side). The twelfth straight line L12 and the thirteenth straight lines L13 are connected in rotation. The twelveth straight line L12 is substantially perpendicular to the first wire 511, and the thirteenth straight line L13 is substantially parallel to the first wire 511. The twelfth straight line L12 and the thirteenth straight lines L13 form a stepped structure.
當氣體沿著第二導線512侵入時,必須依序沿著輪替的第十二直線L12及第十三直線L13行走。第十二直線L12及第十三直線L13的轉折處對氣體發揮了阻擋的效果,可以有效地減少外衝之現象。 When the gas intrudes along the second wire 512, it is necessary to sequentially follow the twelfth straight line L12 and the thirteenth straight line L13 of the rotation. The turning point of the twelfth straight line L12 and the thirteenth straight line L13 exerts a blocking effect on the gas, and the phenomenon of external punching can be effectively reduced.
在本實施例中,第二導線512係以三條第十二直線L12及二條第十三直線L13為例做說明。然而,第十二直線L12及第十三直線L13之數量並非侷限於此,第二導線512亦可以由N條第十二線L12及N-1條第十三直線L13所組成(N為大於或等於二之正整數)。 In the present embodiment, the second wire 512 is described by taking three twelfth straight lines L12 and two thirteenth straight lines L13 as an example. However, the number of the twelfth straight line L12 and the thirteenth straight line L13 is not limited thereto, and the second wire 512 may also be composed of N twelfth lines L12 and N-1 thirteenth straight lines L13 (N is greater than Or equal to a positive integer of two).
綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
1000‧‧‧液晶顯示面板 1000‧‧‧LCD panel
100‧‧‧薄膜電晶體基板 100‧‧‧thin film substrate
110、210、310、410、510‧‧‧周圍線路 110, 210, 310, 410, 510‧‧‧ surrounding lines
111、211、311、411、511‧‧‧第一導線 111, 211, 311, 411, 511‧‧‧ first wire
112、212、312、412、512‧‧‧第二導線 112, 212, 312, 412, 512‧‧‧ second conductor
200‧‧‧彩色濾光片基板 200‧‧‧Color filter substrate
300‧‧‧液晶層 300‧‧‧Liquid layer
400‧‧‧封膠 400‧‧‧Packing
D41、D42‧‧‧距離 D41, D42‧‧‧ distance
L1‧‧‧第一直線 L1‧‧‧ first straight line
L2‧‧‧第二直線 L2‧‧‧Second straight line
L3‧‧‧第三直線 L3‧‧‧ third straight line
L4‧‧‧第四直線 L4‧‧‧ fourth straight line
L5‧‧‧第五直線 L5‧‧‧ fifth straight line
L6‧‧‧第六直線 L6‧‧‧ sixth straight line
L7‧‧‧第七直線 L7‧‧‧ seventh straight line
L8‧‧‧第八直線 L8‧‧‧8th straight line
L9‧‧‧第九直線 L9‧‧‧ ninth straight line
L10‧‧‧第十直線 L10‧‧‧10th straight line
L11‧‧‧第十一直線 L11‧‧‧ tenth straight line
L12‧‧‧第十二直線 L12‧‧‧ twelfth straight line
P11、P21、P31、P41、P51‧‧‧第一連接點 P11, P21, P31, P41, P51‧‧‧ first connection point
P12、P22、P32、P42、P52‧‧‧第二連接點 P12, P22, P32, P42, P52‧‧‧ second connection point
P43‧‧‧第三連接點 P43‧‧‧ third connection point
θ11、θ31、θ32、θ33、θ34、θ41、θ42‧‧‧夾角 Θ11, θ31, θ32, θ33, θ34, θ41, θ42‧‧‧ angle
W11、W12‧‧‧寬度 W11, W12‧‧‧ width
W13‧‧‧間距 W13‧‧‧ spacing
第1圖繪示本發明第一實施例之顯示面板之示意圖。 FIG. 1 is a schematic view showing a display panel according to a first embodiment of the present invention.
第2圖繪示第1圖之薄膜電晶體基板之俯視圖。 Fig. 2 is a plan view showing the thin film transistor substrate of Fig. 1.
第3圖繪示本發明第一實施例之周圍線路之放大圖。 Figure 3 is an enlarged view of the surrounding circuit of the first embodiment of the present invention.
第4圖繪示本發明第二實施例之周圍線路之放大圖。 Figure 4 is an enlarged view of the surrounding circuit of the second embodiment of the present invention.
第5圖繪示本發明第三實施例之周圍線路之放大圖。 Figure 5 is an enlarged view of the surrounding circuit of the third embodiment of the present invention.
第6圖繪示本發明第四實施例之周圍線路之放大圖。 Figure 6 is an enlarged view of the surrounding circuit of the fourth embodiment of the present invention.
第7圖繪示本發明第五實施例之周圍線路之放大圖。 Figure 7 is an enlarged view of the surrounding circuit of the fifth embodiment of the present invention.
110‧‧‧周圍線路 110‧‧‧around lines
111‧‧‧第一導線 111‧‧‧First wire
112‧‧‧第二導線 112‧‧‧Second wire
P11‧‧‧第一連接點 P11‧‧‧ first connection point
P12‧‧‧第二連接點 P12‧‧‧second connection point
W11、W12‧‧‧寬度 W11, W12‧‧‧ width
W13‧‧‧間距 W13‧‧‧ spacing
θ11‧‧‧夾角 Θ11‧‧‧ angle
Claims (16)
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Citations (5)
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US20020149732A1 (en) * | 1999-03-11 | 2002-10-17 | Youn Won Gyun | Liquid crystal display device |
TW200424661A (en) * | 2003-05-02 | 2004-11-16 | Seiko Epson Corp | Electro-optic device and electronic equipment |
CN101206364A (en) * | 2006-12-15 | 2008-06-25 | 三星电子株式会社 | Display apparatus including signal lines arranged for curing a seal line |
CN101614901A (en) * | 2008-06-25 | 2009-12-30 | 乐金显示有限公司 | LCD panel and manufacture method thereof |
TW201020659A (en) * | 2008-11-18 | 2010-06-01 | Au Optronics Corp | Display panel and pixel array substrate |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020149732A1 (en) * | 1999-03-11 | 2002-10-17 | Youn Won Gyun | Liquid crystal display device |
TW200424661A (en) * | 2003-05-02 | 2004-11-16 | Seiko Epson Corp | Electro-optic device and electronic equipment |
CN101206364A (en) * | 2006-12-15 | 2008-06-25 | 三星电子株式会社 | Display apparatus including signal lines arranged for curing a seal line |
CN101614901A (en) * | 2008-06-25 | 2009-12-30 | 乐金显示有限公司 | LCD panel and manufacture method thereof |
TW201020659A (en) * | 2008-11-18 | 2010-06-01 | Au Optronics Corp | Display panel and pixel array substrate |
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