TWI422894B - Wafer level optical imaging apparatus - Google Patents

Wafer level optical imaging apparatus Download PDF

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TWI422894B
TWI422894B TW98140855A TW98140855A TWI422894B TW I422894 B TWI422894 B TW I422894B TW 98140855 A TW98140855 A TW 98140855A TW 98140855 A TW98140855 A TW 98140855A TW I422894 B TWI422894 B TW I422894B
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wafer level
shielding layer
optical imaging
imaging device
level optical
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TW98140855A
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TW201118451A (en
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Nai Yuan Tang
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Himax Semiconductor Inc
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晶圓級光學攝像裝置 Wafer level optical camera

本發明係有關一種晶圓級模組,特別是關於一種晶圓級光學攝像裝置,用以提供遮蔽功能及避免雜散光。 The present invention relates to a wafer level module, and more particularly to a wafer level optical camera device for providing a shadowing function and avoiding stray light.

晶圓級(wafer level)光學技術使用半導體製程以製造晶圓級的小型光學裝置,例如透鏡模組或照相模組。此種晶圓級光學技術可適用於行動或手持電子裝置。 Wafer level optical technology uses semiconductor processes to fabricate wafer-level small optical devices, such as lens modules or camera modules. This wafer level optical technology can be applied to mobile or handheld electronic devices.

如第一圖所示,傳統光學攝像裝置10通常覆蓋有透鏡遮罩12,用以保護光學攝像裝置10且提供所需之光圈。然而,對於晶圓級製程或晶片尺寸(chip scale)封裝而言,很難製造如此小的遮罩,甚至,更難切割晶圓以得到個別的模組。 As shown in the first figure, conventional optical imaging device 10 is typically covered with a lens mask 12 for protecting optical imaging device 10 and providing the desired aperture. However, for wafer level processes or chip scale packages, it is difficult to make such small masks, and even more difficult to cut wafers to get individual modules.

再者,無論是晶圓級光學攝像裝置或者傳統尺寸光學攝像裝置,一般都容易在視場(field of view)內產生雜散光,因而降低影像品質。然而,卻缺少有效機制以解決此問題。 Furthermore, whether it is a wafer level optical imaging device or a conventional size optical imaging device, it is generally easy to generate stray light in a field of view, thereby degrading image quality. However, there is no effective mechanism to solve this problem.

鑑於傳統光學攝像裝置無法有效解決雜散光問題且無法經濟地提供透鏡遮罩,因此亟需提出一種新穎機制,用以解決上述問題。 In view of the fact that conventional optical imaging devices cannot effectively solve stray light problems and cannot provide lens masks economically, it is urgent to propose a novel mechanism to solve the above problems.

鑑於上述,本發明實施例的目的之一在於提出一種晶圓級光學攝像裝置,其不但可提供遮罩功能,且可防止雜散光的產生。 In view of the above, one of the objects of embodiments of the present invention is to provide a wafer level optical imaging device that not only provides a mask function but also prevents generation of stray light.

根據本發明實施例,晶圓級光學攝像裝置包含攝像單元及覆蓋該攝像單元的覆蓋基板。攝像單元包含透鏡基板,其表面形成有一透鏡;影像感測器,用以將通過透鏡基板的光線轉換為電氣信號;及複數個間隔物(spacers),部分之間隔物固著於影像感測器和透鏡基板之間,其餘間隔物則固著於透鏡基板和覆蓋基板之間。不透明上遮蔽層形成於覆蓋基板之上表面,且不透明下遮蔽層形成於覆蓋基板之下表面。根據本實施例特徵之一,上、下遮蔽層分別具有上、下開孔,且上開孔的尺寸大於下開孔的尺寸。藉此,上開孔及下開孔共同定義一視場(field of view),用以侷限通過覆蓋基板而到達透鏡基板及影像感測器的入射光線。 According to an embodiment of the invention, a wafer level optical imaging device includes an imaging unit and a cover substrate covering the imaging unit. The camera unit includes a lens substrate having a lens formed on the surface thereof, an image sensor for converting light passing through the lens substrate into an electrical signal, and a plurality of spacers, and a portion of the spacer is fixed to the image sensor Between the lens substrate and the lens substrate, the remaining spacers are fixed between the lens substrate and the cover substrate. The opaque upper shielding layer is formed on the upper surface of the cover substrate, and the opaque lower shielding layer is formed on the lower surface of the cover substrate. According to one of the features of the embodiment, the upper and lower shielding layers respectively have upper and lower openings, and the size of the upper opening is larger than the size of the lower opening. Thereby, the upper opening and the lower opening together define a field of view for limiting the incident light reaching the lens substrate and the image sensor through the covering substrate.

10‧‧‧光學攝像裝置 10‧‧‧Optical camera

12‧‧‧透鏡遮罩 12‧‧‧ lens mask

20‧‧‧攝像單元 20‧‧‧ camera unit

200‧‧‧光學元件 200‧‧‧Optical components

201‧‧‧透鏡基板 201‧‧‧ lens substrate

201A‧‧‧透鏡 201A‧‧ lens

203‧‧‧影像感測器 203‧‧‧Image sensor

205‧‧‧間隔物 205‧‧‧ spacers

22‧‧‧覆蓋基板 22‧‧‧ Covering substrate

220‧‧‧(覆蓋基板的)上表面 Upper surface of 220‧‧‧ (covering the substrate)

221‧‧‧上遮蔽層 221‧‧‧Upper cover

221A‧‧‧(上)圓形開孔 221A‧‧‧(top) round opening

222‧‧‧(覆蓋基板的)下表面 222‧‧‧ (covering the lower surface of the substrate)

223‧‧‧下遮蔽層 223‧‧‧Under the cover layer

223A‧‧‧(下)圓形開孔 223A‧‧‧(bottom) round opening

24‧‧‧視場 24‧‧ ‧Field of view

第一圖顯示覆蓋有透鏡遮罩的傳統光學攝像裝置。 The first figure shows a conventional optical camera device covered with a lens mask.

第二圖顯示本發明實施例之晶圓級光學攝像裝置的剖面圖。 The second figure shows a cross-sectional view of a wafer level optical imaging device according to an embodiment of the present invention.

第三圖顯示第二圖中覆蓋基板、上遮蔽層和下遮蔽層的展開圖。 The third figure shows an expanded view of the cover substrate, the upper shielding layer, and the lower shielding layer in the second figure.

第四圖所示之例示實施例顯示晶圓級照相模組的攝像單元細節。 The illustrative embodiment shown in the fourth figure shows the details of the camera unit of the wafer level camera module.

第二圖顯示本發明實施例之晶圓級光學攝像裝置的剖面 圖。雖然本實施例例示一晶圓級照相機,然而,本實施例也可適用於其他的光學攝像裝置。 The second figure shows a cross section of a wafer level optical imaging device according to an embodiment of the present invention. Figure. Although this embodiment exemplifies a wafer level camera, the present embodiment is also applicable to other optical imaging devices.

在本實施例中,晶圓級光學攝像裝置主要包含攝像單元20及覆蓋基板22。其中,攝像單元20至少包含光學元件200(例如透鏡),如圖式中的虛線橢圓所示意者。覆蓋基板22可以是(但不限定於)玻璃板。 In the embodiment, the wafer level optical imaging device mainly includes an imaging unit 20 and a cover substrate 22. Wherein, the imaging unit 20 includes at least an optical element 200 (for example, a lens), as indicated by a broken line ellipse in the figure. The cover substrate 22 may be, but is not limited to, a glass plate.

根據本實施例,覆蓋基板22的上表面220及下表面222分別受到不透明的上遮蔽層221及下遮蔽層223形成部分地覆蓋。在本說明書中,「上」係指向光源,而「下」則指向攝像單元20。第三圖顯示覆蓋基板22、上遮蔽層221和下遮蔽層223的展開圖。其中,上遮蔽層221具(上)圓形開孔221A,而下遮蔽層223則具(下)圓形開孔223A。於其他實施例中,開孔圖案並不限定為圓形開孔。 According to the present embodiment, the upper surface 220 and the lower surface 222 of the cover substrate 22 are partially covered by the opaque upper shielding layer 221 and the lower shielding layer 223, respectively. In the present specification, "upper" refers to the light source, and "lower" refers to the imaging unit 20. The third figure shows an expanded view of the cover substrate 22, the upper shielding layer 221, and the lower shielding layer 223. The upper shielding layer 221 has a (upper) circular opening 221A, and the lower shielding layer 223 has a (lower) circular opening 223A. In other embodiments, the aperture pattern is not limited to a circular aperture.

根據本實施例的特徵之一,上開孔221A的尺寸(例如直徑)大於下開孔223A的尺寸。藉此,如第二圖所示,(較大的)上開孔221A及(較小的)下開孔223A共同定義出一視場(field of view)24,用以侷限通過覆蓋基板22而到達攝像單元20的入射光線。 According to one of the features of the embodiment, the size (e.g., diameter) of the upper opening 221A is larger than the size of the lower opening 223A. Thereby, as shown in the second figure, the (larger) upper opening 221A and the (smaller) lower opening 223A collectively define a field of view 24 for confining through the cover substrate 22. The incident light rays reaching the imaging unit 20.

根據本實施例,所形成的視場24可讓所需光線通過,而阻擋其他不需要的光線(例如大於視場24所定義角度之光線),使其不會進入攝像單元20。藉此,攝像單元20內的雜散光即可大量地降低或甚至消失。換句話說,具上/下遮蔽層221/223之覆蓋基板22可作為遮罩,用以防止雜散光的產生。再者,覆蓋基板22還可用以保護攝像單元20,使其免於受到損害。再者,在本實施例中,上遮蔽層221及下遮蔽 層223之一或兩者也可提供作為光圈。 In accordance with the present embodiment, the field of view 24 is formed to allow the desired light to pass through while blocking other unwanted light (e.g., light that is greater than the angle defined by field of view 24) from entering the camera unit 20. Thereby, the stray light in the imaging unit 20 can be largely reduced or even disappeared. In other words, the cover substrate 22 with the upper/lower shielding layers 221/223 can serve as a mask to prevent the generation of stray light. Furthermore, the cover substrate 22 can also be used to protect the camera unit 20 from damage. Furthermore, in the embodiment, the upper shielding layer 221 and the lower shielding layer One or both of layers 223 may also be provided as an aperture.

第四圖所示之例示實施例顯示晶圓級照相模組的攝像單元20細節。為簡化圖式起見,僅顯示其中一個模組。在本例示實施例中,攝像單元20主要包含透鏡基板201及影像感測器203。透鏡基板201表面上形成有一或多個透鏡201A,而影像感測器203可以為互補金屬氧化半導體(CMOS)影像感測器或者電荷耦合元件(CCD)。影像感測器203係用以將通過透鏡基板201的光線轉換為電氣信號。再者,間隔物(spacer)205固著(例如使用黏膠)於影像感測器203和透鏡基板201之間,且固著於透鏡基板201和覆蓋基板22之間。在本實施例中,上遮蔽層221和下遮蔽層223分別形成或沈積於覆蓋基板22表面,例如使用蒸鍍方法(evaporation)或濺鍍方法(sputtering)。所沈積的材質可以(但不限定)為氧化鉻。於整個晶圓完成切割(slicing)之後,即可得到多個晶圓級照相模組。 The illustrative embodiment shown in the fourth figure shows details of the camera unit 20 of the wafer level camera module. To simplify the drawing, only one of the modules is shown. In the illustrated embodiment, the imaging unit 20 mainly includes a lens substrate 201 and an image sensor 203. One or more lenses 201A are formed on the surface of the lens substrate 201, and the image sensor 203 may be a complementary metal oxide semiconductor (CMOS) image sensor or a charge coupled device (CCD). The image sensor 203 is used to convert light passing through the lens substrate 201 into an electrical signal. Furthermore, a spacer 205 is fixed (for example, using an adhesive) between the image sensor 203 and the lens substrate 201, and is fixed between the lens substrate 201 and the cover substrate 22. In the present embodiment, the upper shielding layer 221 and the lower shielding layer 223 are respectively formed or deposited on the surface of the cover substrate 22, for example, using an evaporation method or a sputtering method. The deposited material can be, but is not limited to, chromium oxide. After the entire wafer is slicing, multiple wafer level camera modules are available.

以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。 The above description is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the invention should be included in the following Within the scope of the patent application.

20‧‧‧攝像單元 20‧‧‧ camera unit

200‧‧‧光學元件 200‧‧‧Optical components

22‧‧‧覆蓋基板 22‧‧‧ Covering substrate

220‧‧‧(覆蓋基板的)上表面 Upper surface of 220‧‧‧ (covering the substrate)

221‧‧‧上遮蔽層 221‧‧‧Upper cover

222‧‧‧(覆蓋基板的)下表面 222‧‧‧ (covering the lower surface of the substrate)

223‧‧‧下遮蔽層 223‧‧‧Under the cover layer

24‧‧‧視場 24‧‧ ‧Field of view

Claims (17)

一種晶圓級光學攝像裝置,包含:一攝像單元;一覆蓋基板,用以覆蓋該攝像單元;一上遮蔽層,形成於該覆蓋基板之一上表面;及一下遮蔽層,形成於該覆蓋基板之一下表面;其中上述之上遮蔽層為不透明且具一上開孔,且該下遮蔽層為不透明且具一下開孔,且,該上開孔及該下開孔共同定義一視場(field of view),用以侷限通過該覆蓋基板而到達該攝像單元的入射光線。 A wafer level optical imaging device comprising: an imaging unit; a cover substrate for covering the imaging unit; an upper shielding layer formed on an upper surface of the cover substrate; and a lower shielding layer formed on the cover substrate a lower surface; wherein the upper shielding layer is opaque and has an upper opening, and the lower shielding layer is opaque and has a lower opening, and the upper opening and the lower opening together define a field of view (field) Of view) for limiting incident light reaching the camera unit through the cover substrate. 如申請專利範圍第1項所述之晶圓級光學攝像裝置,其中上述之攝像單元包含光學元件。 The wafer level optical imaging device of claim 1, wherein the imaging unit comprises an optical element. 如申請專利範圍第1項所述之晶圓級光學攝像裝置,其中上述之覆蓋基板包含一玻璃板。 The wafer level optical imaging device of claim 1, wherein the cover substrate comprises a glass plate. 如申請專利範圍第1項所述之晶圓級光學攝像裝置,其中上述上開孔的尺寸大於該下開孔的尺寸。 The wafer level optical imaging device of claim 1, wherein the size of the upper opening is larger than the size of the lower opening. 如申請專利範圍第1項所述之晶圓級光學攝像裝置,其中上述之上開孔為圓形,且該下開孔為圓形。 The wafer level optical imaging device of claim 1, wherein the upper opening is circular and the lower opening is circular. 如申請專利範圍第1項所述之晶圓級光學攝像裝置,其中上述之攝像單元包含一透鏡基板,其表面形成有一透鏡。 The wafer level optical imaging device according to claim 1, wherein the image pickup unit comprises a lens substrate having a lens formed on a surface thereof. 如申請專利範圍第6項所述之晶圓級光學攝像裝置,其中上述之攝像單元更包含一影像感測器,用以將通過該透鏡基板的光線轉換為電氣信號。 The wafer level optical camera device of claim 6, wherein the image capturing unit further comprises an image sensor for converting light passing through the lens substrate into an electrical signal. 如申請專利範圍第7項所述之晶圓級光學攝像裝置,其中上述之攝像單元更包含複數個間隔物(spacers),部分該間隔物固著於該影像感測器和該透鏡基板之間,其餘該間隔物固著於該透鏡基板和該覆蓋基板之間。 The wafer level optical imaging device of claim 7, wherein the image capturing unit further comprises a plurality of spacers, and the spacer is fixed between the image sensor and the lens substrate. The remaining spacer is fixed between the lens substrate and the cover substrate. 如申請專利範圍第7項所述之晶圓級光學攝像裝置,其中上述之影像感測器包含一互補金屬氧化半導體(CMOS)影像感測器或者電荷耦合元件(CCD)。 The wafer level optical imaging device of claim 7, wherein the image sensor comprises a complementary metal oxide semiconductor (CMOS) image sensor or a charge coupled device (CCD). 如申請專利範圍第1項所述之晶圓級光學攝像裝置,其中上述之上遮蔽層藉由蒸鍍或濺鍍方法而沈積於該覆蓋基板之上表面,且該下遮蔽層藉由蒸鍍或濺鍍方法而沈積於該覆蓋基板之下表面。 The wafer level optical imaging device of claim 1, wherein the upper shielding layer is deposited on the upper surface of the cover substrate by evaporation or sputtering, and the lower shielding layer is evaporated by evaporation. Or deposited on the lower surface of the cover substrate by a sputtering method. 如申請專利範圍第10項所述之晶圓級光學攝像裝置,其中上述之上遮蔽層及該下遮蔽層包含氧化鉻。 The wafer level optical imaging device of claim 10, wherein the upper shielding layer and the lower shielding layer comprise chromium oxide. 一種晶圓級光學攝像裝置,包含:一透鏡基板,其表面形成有一透鏡;一影像感測器,用以將通過該透鏡基板的光線轉換為電氣信號;一覆蓋基板,用以覆蓋該攝像單元;複數個間隔物(spacers),部分該間隔物固著於該影像感測器和該透鏡基板之間,其餘該間隔物固著於該透鏡基板和該覆蓋基板之間;一不透明上遮蔽層,形成於該覆蓋基板之一上表面;及一不透明下遮蔽層,形成於該覆蓋基板之一下表面;其中,該上遮蔽層具一上開孔,且該下遮蔽層具一下開孔,該上開孔的尺寸大於該下開孔的尺寸,藉此,該上開孔及該下開孔共同定義一視場(field of view),用以侷限通過該覆蓋基板而到達該透鏡基板及該 影像感測器的入射光線。 A wafer level optical imaging device comprising: a lens substrate having a lens formed on a surface thereof; an image sensor for converting light passing through the lens substrate into an electrical signal; and a cover substrate for covering the camera unit a plurality of spacers, a portion of the spacer is fixed between the image sensor and the lens substrate, and the other spacer is fixed between the lens substrate and the cover substrate; an opaque upper shielding layer Forming on an upper surface of the cover substrate; and an opaque lower shielding layer formed on a lower surface of the cover substrate; wherein the upper shielding layer has an upper opening, and the lower shielding layer has a lower opening, The size of the upper opening is larger than the size of the lower opening, wherein the upper opening and the lower opening together define a field of view for limiting access to the lens substrate through the cover substrate and The incident light of the image sensor. 如申請專利範圍第12項所述之晶圓級光學攝像裝置,其中上述之覆蓋基板包含一玻璃板。 The wafer level optical imaging device of claim 12, wherein the cover substrate comprises a glass plate. 如申請專利範圍第12項所述之晶圓級光學攝像裝置,其中上述之上開孔為圓形,且該下開孔為圓形。 The wafer level optical imaging device of claim 12, wherein the upper opening is circular and the lower opening is circular. 如申請專利範圍第12項所述之晶圓級光學攝像裝置,其中上述之影像感測器包含一互補金屬氧化半導體(CMOS)影像感測器或者電荷耦合元件(CCD)。 The wafer level optical imaging device of claim 12, wherein the image sensor comprises a complementary metal oxide semiconductor (CMOS) image sensor or a charge coupled device (CCD). 如申請專利範圍第12項所述之晶圓級光學攝像裝置,其中上述之上遮蔽層藉由蒸鍍或濺鍍方法而沈積於該覆蓋基板之上表面,且該下遮蔽層藉由蒸鍍或濺鍍方法而沈積於該覆蓋基板之下表面。 The wafer level optical imaging device of claim 12, wherein the upper shielding layer is deposited on the upper surface of the cover substrate by evaporation or sputtering, and the lower shielding layer is evaporated by evaporation. Or deposited on the lower surface of the cover substrate by a sputtering method. 如申請專利範圍第16項所述之晶圓級光學攝像裝置,其中上述之上遮蔽層及該下遮蔽層包含氧化鉻。 The wafer level optical imaging device of claim 16, wherein the upper shielding layer and the lower shielding layer comprise chromium oxide.
TW98140855A 2009-11-30 2009-11-30 Wafer level optical imaging apparatus TWI422894B (en)

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US8810721B2 (en) 2011-09-02 2014-08-19 Himax Technologies Limited Camera module
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TW200739145A (en) * 2006-01-23 2007-10-16 Sony Corp Optical low-pass filter

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