TWI420823B - High - speed dual - mode remover - Google Patents

High - speed dual - mode remover Download PDF

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TWI420823B
TWI420823B TW099103463A TW99103463A TWI420823B TW I420823 B TWI420823 B TW I420823B TW 099103463 A TW099103463 A TW 099103463A TW 99103463 A TW99103463 A TW 99103463A TW I420823 B TWI420823 B TW I420823B
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TW201128955A (en
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Description

高速雙模預除器 High speed dual mode pre-discharger

本發明係有關一種預除器,尤指一種應用在無線通訊系統領域之頻率合成器裡的高數雙模預除器。 The present invention relates to a pre-discharger, and more particularly to a high-number dual-mode pre-discharger for use in a frequency synthesizer in the field of wireless communication systems.

在無線通訊系統中,預除器(Prescaler)是邏輯上達成系統之頻率規劃的必要元件,尤其是在高頻模組中,如何縮小電路的使用體積及減少功率的消耗並且達到高速模組的預除器需求,實為研發者所共同希冀的目標。 In the wireless communication system, the Prescaler is a necessary component for logically achieving the frequency planning of the system, especially in the high frequency module, how to reduce the use volume of the circuit and reduce the power consumption and achieve the pre-emption of the high-speed module. The demand for the device is really the goal that the developers have hoped for.

在採用鎖相迴路方式設計的頻率合成器中,高速雙模預除器(dual-modulus prescaler)為其最重要的核心電路之一。其主要的原因在於此電路必須操作在非常高的頻率也因此消耗最多的功率。 Among the frequency synthesizers designed with phase-locked loops, the high-speed dual-mode prescaler is one of the most important core circuits. The main reason for this is that the circuit must operate at very high frequencies and therefore consume the most power.

習知技術中,通常會使用D型正反器(D Flip-Flop)配合反相或閘(NOR)與反相及閘(NAND)以組成預除器,傳統的D型正反器如Yuan,J.和Svensson,C.在“High-speed CMOS circuit technique,”IEEE J.Solid-State Circuit,Vol.24,pp.62-70,Feb.1989.所揭露之電路,請參閱圖1,其係利用九個電晶體來達成真單相位時脈電路的D型正反器(True Single Phase Clock D Flip-Flop,簡稱TSPC D Flip-Flop),該種D型正反器雖然能在高速電路中使用,惟,電晶體數目太多,造成功 率耗損的問題無法解決。 In the prior art, a D-type flip-flop (D Flip-Flop) is used together with an inverting or gate (NOR) and a reverse phase (NAND) to form a pre-discharger. A conventional D-type flip-flop such as Yuan J. and Svensson, C. In the circuit disclosed in "High-speed CMOS circuit technique," IEEE J. Solid-State Circuit, Vol. 24, pp. 62-70, Feb. 1989, see Figure 1. It uses nine transistors to achieve True Single Phase Clock D Flip-Flop (TSPC D Flip-Flop), although the D-type flip-flop can Used in high-speed circuits, but the number of transistors is too large, and it is successful. The problem of rate loss cannot be solved.

而J.Navarro和W.Van Noije,在“A 1.6-GHz dual modulus prescaler using the Extended True-Single-Phase-Clock CMOS circuit technique (E-TSPC),”IEEE J.Solid-State Circuits,vol.34,pp.97-102,Jan.1999.中揭露了一種增強式真單相位時脈電路的D型正反器(Extended TSPC D Flip-Flop,簡稱E-TSPC D Flip-Flop),請參閱圖2,其減少了電路中使用的電晶體數目,利用六顆電晶體便能達成TSPC電路中的功用,有效降低了功率的消耗,因此已經成功的應用在許多低功率的移動式通訊晶片中,惟,當時脈訊號clk輸入為1且資料訊號D為0時,N型電晶體(M1)與P型電晶體(M2)會同時導通,造成電流短路問題(DC/Short Current Power Problem)。 And J. Navarro and W. Van Noije, in "A 1.6-GHz dual modulus prescaler using the Extended True-Single-Phase-Clock CMOS circuit technique (E-TSPC)," IEEE J. Solid-State Circuits, vol. 34 , pp.97-102, Jan. 1999. Reveals an extended true single phase clock circuit D-type flip-flop (Extended TSPC D Flip-Flop, referred to as E-TSPC D Flip-Flop), see Figure 2, which reduces the number of transistors used in the circuit, can achieve the functions in the TSPC circuit by using six transistors, and effectively reduces the power consumption. Therefore, it has been successfully applied in many low-power mobile communication chips. However, when the pulse signal clk input is 1 and the data signal D is 0, the N-type transistor (M1) and the P-type transistor (M2) are simultaneously turned on, causing a DC/Short Current Power Problem.

在預除器中,如要做高速除頻並且降低功率消耗,通常會將訊號做一快速除頻(如將訊號除4),再將快速除頻後的訊號進行高倍除頻(如將快速預除後的訊號除32),藉此達到一除頻128的雙模預除器(Dual Modulus Prescaler),其優點在於減少功率消耗,並且也加快了預除器的處理速度,而如果將預除器、反向或閘與反相及閘分開設計在連接的話,其電晶體數目較多,非為一理想的電路設計。因此,S.Pellerano,S.Levantino,C.Samori,和A.L.Lacaita,在“A 13.5-mW 5-GHz frequency synthesizer with dynamic-logic frequency divider,”IEEE J.Solid-State Circuits,vol.39,no.2,pp.378-383,Feb.2004.揭露了一種降低電晶體數目的預除器,如圖3所示,其利用一或閘電晶體Mor與一第一D型正反器1內的一第一N型電晶 體n1做並聯設置,形成一或閘電路,並且利用一及閘電晶體Mad與一第二D型正反器2內的一第四P型電晶體p4做並聯設置形成一及閘電路,再利用一反相器3做反相處理,總共使用了十六顆電晶體達成一除二或除三的預除器功用,並且利用並聯該或閘電晶體Mor與該第一N型電晶體n1,以及該及閘電晶體Mad與該第四P型電晶體p4的方式避免電路串聯充放電較慢的問題。 In the pre-discharger, if high-speed frequency division is to be performed and the power consumption is reduced, the signal is usually subjected to a fast frequency division (for example, the signal is divided by 4), and then the fast-divided signal is subjected to high-frequency division (for example, it will be fast). The pre-divided signal is divided by 32), thereby achieving a dual-mode prescaler with a frequency division of 128, which has the advantages of reducing power consumption and speeding up the processing speed of the pre-processor, and if The divider, the reverse or the gate are separated from the inverting and the gate, and the number of transistors is large, which is not an ideal circuit design. Therefore, S. Pellerano, S. Levantino, C. Samori, and ALLacaita, in "A 13.5-mW 5-GHz frequency synthesizer with dynamic-logic frequency divider," IEEE J. Solid-State Circuits, vol. 39, no .2, pp. 378-383, Feb. 2004. A pre-remover for reducing the number of transistors is disclosed. As shown in FIG. 3, it utilizes an OR gate transistor Mor and a first D-type flip-flop 1 a first N-type electron crystal The body n1 is arranged in parallel to form a gate circuit, and a gate circuit is formed by using a gate transistor Mad and a fourth P-type transistor p4 in a second D-type flip-flop 2 to form a gate circuit. Using an inverter 3 for inverting processing, a total of sixteen transistors are used to achieve a divide-by-two or three-divider pre-distributor function, and the parallel gate transistor Mor and the first N-type transistor n1 are used in parallel. And the manner of the gate transistor Mad and the fourth P-type transistor p4 avoids the problem that the circuit is charged and discharged in series in a slow manner.

該案利用反相器3開啟或關閉該第二D型正反器2的方式來施行除二或除三的動作,當該反相器3輸出為1時,該第四P型電晶體p4不導通,進而關閉該第二D型正反器2,僅使用該第一D型正反器1作為將頻率除二的預除器,而當該反向器3輸出為0時,該第四P型電晶體p4導通,進而使該第一D型正反器1與該第二D型正反器2連通,為一可將頻率除三的預除器。 In this case, the operation of dividing by two or three is performed by the inverter 3 turning on or off the second D-type flip-flop 2, and when the output of the inverter 3 is 1, the fourth P-type transistor p4 Not turning on, thereby turning off the second D-type flip-flop 2, using only the first D-type flip-flop 1 as a pre-divider that divides the frequency by two, and when the output of the inverter 3 is 0, the The four P-type transistor p4 is turned on, and the first D-type flip-flop 1 is connected to the second D-type flip-flop 2, which is a pre-divider capable of dividing the frequency by three.

該案利用該反相器3之輸出訊號控制該第二D型正反器2導通與否的目的,惟,當該或閘電晶體Mor導通且輸入訊號in為0時,一與該或閘電晶體Mor電性連接的一第一P型電晶體p1也會導通,使電源直接經由該第一P型電晶體p1與該或閘電晶體Mor接地,仍然有電流短路問題(DC Current Power Problem),因而增加了功率的消耗。 The case uses the output signal of the inverter 3 to control whether the second D-type flip-flop 2 is turned on or not. However, when the OR gate transistor Mor is turned on and the input signal in is 0, the AND gate is A first P-type transistor p1 electrically connected to the transistor Mor is also turned on, so that the power source is directly grounded via the first P-type transistor p1 and the gate transistor Mor, and there is still a current short circuit problem (DC Current Power Problem ), thus increasing the power consumption.

本發明之主要目的,在於解決習知技術中之電流短路問題(DC Current Power Problem)所造成的功率耗損,節省電量之使用。 The main object of the present invention is to solve the power consumption caused by the DC Current Power Problem in the prior art and to save power.

為達上述目的,本發明提供一種高速雙模預除器,其用以供一時 脈訊號輸入,該高速雙模預除器包括有一第一D型正反器、一第二D型正反器及一主控電晶體,該第一D型正反器包含有一第一輸出端、一第一時脈輸入端,該時脈訊號藉由該第一時脈輸入端輸入至該第一D型正反器;第二D型正反器包含有一第二資料輸入端及一第二時脈輸入端,該時脈訊號藉由該第二時脈輸入端輸入至該第二D型正反器;而該主控電晶體具有一汲極、一源極及一閘極,該汲極與該第一輸出端連接,該源極與該第二資料輸入端連接。 In order to achieve the above object, the present invention provides a high speed dual mode pre-processor for use in a moment Pulse signal input, the high speed dual mode pre-receiver includes a first D-type flip-flop, a second D-type flip-flop and a main control transistor, the first D-type flip-flop includes a first output a first clock input end, the clock signal is input to the first D-type flip-flop by the first clock input end; the second D-type flip-flop includes a second data input end and a first The clock signal is input to the second D-type flip-flop by the second clock input end; and the main control transistor has a drain, a source and a gate. The drain is connected to the first output, and the source is connected to the second data input.

由上述說明可知,該第D一型正反器與該第二D型正反器藉由該主控電晶體相互連接,且該主控電晶體具有一或閘狀態及一及閘狀態,當位於該或閘狀態時,該主控電晶體與該第一D型正反器內之電路形成一或閘電路取代習知技術中之或閘電晶體,而當位於該及閘狀態時,該主控電晶體與該第二D型正反器內之電路形成一及閘電路取代習知技術中之及閘電路,藉此減少預除器中之電晶體數目。 It can be seen from the above description that the D-type flip-flop and the second D-type flip-flop are connected to each other by the main control transistor, and the main control transistor has an OR gate state and a gate state. When the gate state is in the state of the gate, the main control transistor and the circuit in the first D-type flip-flop form a gate circuit instead of the gate transistor in the prior art, and when located in the gate state, the The main control transistor and the circuit in the second D-type flip-flop form a gate circuit instead of the gate circuit in the prior art, thereby reducing the number of transistors in the pre-processor.

習知技術 Conventional technology

clk‧‧‧時脈訊號 Clk‧‧‧clock signal

D‧‧‧資料訊號 D‧‧‧Information signal

M1‧‧‧N型電晶體 M1‧‧‧N type transistor

M2‧‧‧P型電晶體 M2‧‧‧P type transistor

1‧‧‧第一D型正反器 1‧‧‧First D-type flip-flop

2‧‧‧第二D型正反器 2‧‧‧Second D-type flip-flop

3‧‧‧反相器 3‧‧‧Inverter

n1‧‧‧第一N型電晶體 N1‧‧‧First N-type transistor

p1‧‧‧第一P型電晶體 P1‧‧‧First P-type transistor

p4‧‧‧第四P型電晶體 P4‧‧‧4th P-type transistor

Mor‧‧‧或閘電晶體 Mor‧‧‧ or gate transistor

Mad‧‧‧及閘電晶體 Mad‧‧‧ and gate transistor

in‧‧‧輸入訊號 In‧‧‧Input signal

本發明 this invention

10‧‧‧第一D型正反器 10‧‧‧First D-type flip-flop

Mn1‧‧‧第一N型電晶體 Mn1‧‧‧First N-type transistor

Mn2‧‧‧第二N型電晶體 Mn2‧‧‧Second N-type transistor

Mn3‧‧‧第三N型電晶體 Mn3‧‧‧3rd N-type transistor

Mp1‧‧‧第一P型電晶體 Mp1‧‧‧First P-type transistor

Mp2‧‧‧第二P型電晶體 Mp2‧‧‧Second P-type transistor

Mp3‧‧‧第三P型電晶體 Mp3‧‧‧ Third P-type transistor

out‧‧‧第一輸出端 Out‧‧‧first output

20‧‧‧第二D型正反器 20‧‧‧Second D-type flip-flop

Mn4‧‧‧第四N型電晶體 Mn4‧‧‧4th N-type transistor

Mn5‧‧‧第五N型電晶體 Mn5‧‧‧ fifth N-type transistor

Mn6‧‧‧第六N型電晶體 Mn6‧‧‧ sixth N-type transistor

Mp4‧‧‧第四P型電晶體 Mp4‧‧‧4th P-type transistor

Mp5‧‧‧第五P型電晶體 Mp5‧‧‧ fifth P-type transistor

Mp6‧‧‧第六P型電晶體 Mp6‧‧‧6th P-type transistor

in‧‧‧第二資料輸入端 In‧‧‧Second data input

Mj‧‧‧主控電晶體 Mj‧‧‧main control transistor

mc‧‧‧模態控制訊號 Mc‧‧‧modal control signal

clk1‧‧‧第一時脈輸入端 Clk1‧‧‧first clock input

clk2‧‧‧第二時脈輸入端 Clk2‧‧‧second clock input

30‧‧‧本發明之模態二 30‧‧‧Mode 2 of the invention

31‧‧‧本發明之模態三 31‧‧‧Mode 3 of the invention

40‧‧‧習知技術之模態二 40‧‧‧The modality of the prior art

41‧‧‧習知技術之模態三 41‧‧‧Mental Technology Modal Three

圖1,係習知技術之TSPC的D型正反器示意圖。 Figure 1 is a schematic diagram of a D-type flip-flop of a TSPC of the prior art.

圖2,係習知技術之E-TSPC的D型正反器示意圖。 Figure 2 is a schematic diagram of a D-type flip-flop of the E-TSPC of the prior art.

圖3,係習知技術之預除器電路示意圖。 Figure 3 is a schematic diagram of a prior art pre-processor circuit.

圖4,係本發明一較佳實施例之電路示意圖。 4 is a circuit diagram of a preferred embodiment of the present invention.

圖5,係本發明一較佳實施例之電路波形模擬結果示意圖。 Figure 5 is a schematic diagram showing the results of circuit waveform simulations in accordance with a preferred embodiment of the present invention.

圖6,係本發明與習知技術之模擬結果的功率消耗比較圖。 Figure 6 is a graph comparing the power consumption of the simulation results of the present invention with the prior art.

圖7,係本發明與習知技術之模擬結果的功率延遲乘積比較圖。 Figure 7 is a comparison of power delay products of the simulation results of the present invention and the prior art.

有關本發明之詳細說明及技術內容,現就配合圖式說明如下:請參閱圖4所示,係本發明一較佳實施例之電路示意圖,如圖所示:本發明係為一種高速雙模預除器,其用以供一時脈訊號輸入,該高速雙模預除器包括有一第一D型正反器10、一第二D型正反器20及一主控電晶體Mj,該第一D型正反器10包含有一第一輸出端out、一第一時脈輸入端clk1,該時脈訊號藉由該第一時脈輸入端clk1輸入至該第一D型正反器10;第二D型正反器20包含有一第二資料輸入端in及一第二時脈輸入端clk2,該時脈訊號亦藉由該第二時脈輸入端clk2輸入至該第二D型正反器20;而該主控電晶體Mj具有一汲極、一源極及一閘極,該汲極與該第一輸出端out連接,該源極與該第二資料輸入端in連接,其中,在本實施例中,該主控電晶體Mj為一P型電晶體,並且,該主控電晶體Mj之閘極用以供一模態控制訊號mc輸入,該主控電晶體Mj藉由該模態控制訊號mc控制該第一D型正反器10與該第二D型正反器20之導通與否,來變換模態,而在本實施例中,本新型之模態具有一模態二及一模態三,該模態二為將該時脈訊號之頻率除二,而該模態三為將該時脈訊號之頻率除三。 The detailed description and technical content of the present invention will now be described with reference to the following drawings: Referring to FIG. 4, it is a schematic diagram of a circuit according to a preferred embodiment of the present invention. As shown in the figure, the present invention is a high-speed dual mode. a pre-discharger for inputting a clock signal, the high-speed dual-mode pre-disconnector including a first D-type flip-flop 10, a second D-type flip-flop 20 and a main control transistor Mj, the first a D-type flip-flop 10 includes a first output terminal out, a first clock input terminal clk1, the clock signal is input to the first D-type flip-flop 10 by the first clock input terminal clk1; The second D-type flip-flop 20 includes a second data input terminal in and a second clock input terminal clk2. The clock signal is also input to the second D-type forward and reverse by the second clock input terminal clk2. The main control transistor Mj has a drain, a source and a gate, the drain is connected to the first output terminal outlet, and the source is connected to the second data input terminal in, wherein In this embodiment, the main control transistor Mj is a P-type transistor, and the gate of the main control transistor Mj is used for a modal control. No. mc input, the main control transistor Mj controls the conduction of the first D-type flip-flop 10 and the second D-type flip-flop 20 by the modal control signal mc to change the mode, and In this embodiment, the modality of the present invention has a modality 2 and a modality 3, wherein the modality 2 divides the frequency of the clock signal by two, and the modality 3 divides the frequency of the clock signal. three.

更進一步的說明,該第一D型正反器10包含有一第一N型電晶體Mn1、一第二N型電晶體Mn2、一第三N型電晶體Mn3、一第一P型電晶體Mp1、一第二P型電晶體Mp2及一第三P型電晶體Mp3,每個N型電晶體與P型電晶體皆具有一汲極、一源極及一閘極,該第一P型電晶體Mp1之源極與該第一N型電晶體Mn1之汲極連接形成該第一 輸出端out,該第二P型電晶體Mp2之源極與該第二N型電晶體Mn2之汲極連接,該第三P型電晶體Mp3之源極與該第三N型電晶體Mn3之汲極連接,其中該第二N型電晶體Mn2、該第三N型電晶體Mn3及該第一P型電晶體Mp1之閘極皆為該第一時脈輸入端clk1,供該時脈訊號輸入。 To further illustrate, the first D-type flip-flop 10 includes a first N-type transistor Mn1, a second N-type transistor Mn2, a third N-type transistor Mn3, and a first P-type transistor Mp1. a second P-type transistor Mp2 and a third P-type transistor Mp3, each of the N-type transistor and the P-type transistor having a drain, a source and a gate, the first P-type The source of the crystal Mp1 is connected to the drain of the first N-type transistor Mn1 to form the first The output terminal out, the source of the second P-type transistor Mp2 is connected to the drain of the second N-type transistor Mn2, the source of the third P-type transistor Mp3 and the third N-type transistor Mn3 a drain connection, wherein the second N-type transistor Mn2, the third N-type transistor Mn3, and the gate of the first P-type transistor Mp1 are the first clock input terminal clk1 for the clock signal Input.

而該第二D型正反器20包含有一第四N型電晶體Mn4、一第五N型電晶體Mn5、一第六N型電晶體Mn6、一第四P型電晶體Mp4、一第五P型電晶體Mp5及一第六P型電晶體Mp6,每個N型電晶體與P型電晶體皆具有一汲極、一源極及一閘極,該第四P型電晶體Mp4之源極與該第四N型電晶體Mn4之汲極連接形成該第二資料輸入端in,該第五P型電晶體Mp5之源極與該第五N型電晶體Mn5之汲極連接,該第六P型電晶體Mp6之源極與該第六N型電晶體Mn6之汲極連接,其中該第四N型電晶體Mn4、該第五N型電晶體Mn5及該第六P型電晶體Mp6之閘極皆為該第二時脈輸入端clk2,供該時脈訊號輸入。 The second D-type flip-flop 20 includes a fourth N-type transistor Mn4, a fifth N-type transistor Mn5, a sixth N-type transistor Mn6, a fourth P-type transistor Mp4, and a fifth. a P-type transistor Mp5 and a sixth P-type transistor Mp6, each of the N-type transistor and the P-type transistor has a drain, a source and a gate, and the source of the fourth P-type transistor Mp4 The pole is connected to the drain of the fourth N-type transistor Mn4 to form the second data input terminal in, and the source of the fifth P-type transistor Mp5 is connected to the drain of the fifth N-type transistor Mn5. a source of the sixth P-type transistor Mp6 is connected to a drain of the sixth N-type transistor Mn6, wherein the fourth N-type transistor Mn4, the fifth N-type transistor Mn5, and the sixth P-type transistor Mp6 The gates are all the second clock input terminal clk2 for inputting the clock signal.

該主控電晶體Mj具有一或閘狀態及一及閘狀態,當位於該或閘狀態時,該主控電晶體Mj與該第一N型電晶體Mn1並聯形成一或閘電路,而當位於該及閘狀態時,該主控電晶體Mj與該第四P型電晶體Mp4並聯形成一及閘電路,並且該主控電晶體Mj之閘極連接有一控制訊號,用以控制該第一D型正反器10與該第二D型正反器20之連接狀態。 The main control transistor Mj has an OR gate state and a gate state. When in the OR gate state, the main control transistor Mj forms an OR gate circuit in parallel with the first N-type transistor Mn1. In the gate state, the main control transistor Mj and the fourth P-type transistor Mp4 are connected in parallel to form a gate circuit, and the gate of the main control transistor Mj is connected with a control signal for controlling the first D. The state in which the type flip-flop 10 is connected to the second D-type flip-flop 20.

此外,當該第一P型電晶體Mp1因為時脈訊號為0而導通,且該主控電晶體Mj也導通,該第四N型電晶體Mn4因為時脈訊號為0的關係而不導通,不會造成電流短路問題。 In addition, when the first P-type transistor Mp1 is turned on because the clock signal is 0, and the main control transistor Mj is also turned on, the fourth N-type transistor Mn4 is not turned on because the clock signal is 0. Does not cause a current short circuit problem.

請參閱圖5,其係為本發明一較佳實施例之電路波形模擬結果示意圖,最上方的橫條圖為時脈訊號波形示意圖,中間的橫條圖為本發明將頻率除三後的模態三示意圖,最下方的橫條圖為本發明將頻率除二後的模態二示意圖,如圖所示,本發明可確實的將輸入之時脈訊號之頻率除二或除三,並且維持一固定的電壓值。 Please refer to FIG. 5 , which is a schematic diagram of circuit waveform simulation results according to a preferred embodiment of the present invention. The top horizontal bar diagram is a waveform diagram of a clock signal, and the middle horizontal bar diagram is a mode of dividing the frequency by three in the present invention. The third schematic diagram, the lower horizontal bar diagram is a schematic diagram of the second mode after dividing the frequency by two, as shown in the figure, the present invention can surely divide the frequency of the input clock signal by two or three, and maintain A fixed voltage value.

請參考表一,其為本發明與習知技術在臺積電(TSMC)0.18微米製程下的結果比較: Please refer to Table 1, which compares the results of the present invention with the conventional technology in TSMC 0.18 micron process:

需特別說明的是,習知技術係為S.Pellerano,S.Levantino,C.Samori,和A.L.Lacaita,在IEEE J.Solid-State Circuits,vol.39,no.2,pp.378-383,Feb.2004.所發表的“A 13.5-mW 5-GHz frequency synthesizer with dynamic-logic frequency divider,”一文之技術,由表一可知,習知技術總共必須使用16顆電晶體,其中12顆為兩個D型正反器所必須要使用的電晶體數目,因此,額外使用的電晶體數目為4顆;相較於習知技術,本發明總共僅需使用13顆電晶體,並且額外使用的電晶體只有1顆。在能使用之最大頻率比較上,497MHz與445MHz分別為習知技術模態二及模態三的最大頻率 ;而在本發明之一較佳實施例上,模態二及模態三之最大頻率分別為502MHz與497MHz。而在功率的消耗上,習知技術在最大頻率之模態二及模態三分別為6.38uW及5.97uW;而在本發明之一較佳實施例上,模態二及模態三在最大頻率之消耗功率分別為5.24uW及5.27uW,與習知技術比較,本發明在模態二及模態三最高分別可以節省23%及27%的功率比值。 It should be noted that the prior art is S. Pellerano, S. Levantino, C. Samori, and ALLacaita, in IEEE J. Solid-State Circuits, vol. 39, no. 2, pp. 378-383, According to the technique of "A 13.5-mW 5-GHz frequency synthesizer with dynamic-logic frequency divider," published by Feb. 2004., it can be known from Table 1 that a total of 16 transistors must be used in the prior art, of which 12 are two. The number of transistors that must be used for a D-type flip-flop, therefore, the number of additional used transistors is four; compared to the prior art, the invention only needs to use 13 transistors in total, and the additional use of electricity There is only one crystal. In the maximum frequency comparison that can be used, 497MHz and 445MHz are the maximum frequencies of the conventional technology mode 2 and mode 3, respectively. In a preferred embodiment of the present invention, the maximum frequencies of the modal two and the modal three are 502 MHz and 497 MHz, respectively. In terms of power consumption, the mode 2 and mode 3 of the conventional technique at the maximum frequency are 6.38 uW and 5.97 uW, respectively; and in a preferred embodiment of the invention, the mode 2 and the mode 3 are at the maximum. The power consumption of the frequency is 5.24uW and 5.27uW, respectively. Compared with the prior art, the present invention can save a power ratio of 23% and 27% respectively in the modal second and the modal three.

請再參閱圖6,其係本發明與習知技術之模擬結果的功率消耗比較圖,由圖中所示,本發明之模態二30及本發明之模態三31在相同的供應電壓下,功率消耗皆小於習知技術之模態二40及習知技術之模態三41。再請參閱圖7,其係本發明與習知技術之模擬結果的功率延遲乘積(Power-delay-product)比較圖,由圖中所示,我們更可以清楚的瞭解本發明之模態二30或本發明之模態三31不論是在高頻、低頻及功率消耗上皆優於習知技術。 Please refer to FIG. 6, which is a comparison diagram of the power consumption of the simulation results of the present invention and the prior art. As shown in the figure, the mode two 30 of the present invention and the mode three 31 of the present invention are at the same supply voltage. The power consumption is smaller than the modality 40 of the prior art and the modality 41 of the prior art. Referring again to FIG. 7, which is a power-delay-product comparison diagram of the simulation results of the present invention and the prior art, as shown in the figure, we can more clearly understand the modality 30 of the present invention. Or the modality 31 of the present invention is superior to the prior art in terms of high frequency, low frequency, and power consumption.

綜上所述,相較於習知技術,本發明具有下列特點: In summary, the present invention has the following features as compared with the prior art:

(1).該第一D型正反器10與該第二D型正反器20藉由該主控電晶體Mj相互連接,且該主控電晶體Mj之閘極連接有一控制訊號用以切換該第一D型正反器10與該第二D型正反器20之連通或斷開,取代習知技術藉由反相器關閉該第四P型電晶體Mp4以斷開該第一D型正反器10與該第二D型正反器20之連接。 (1) The first D-type flip-flop 10 and the second D-type flip-flop 20 are connected to each other by the main control transistor Mj, and the gate of the main control transistor Mj is connected with a control signal for Switching the first D-type flip-flop 10 to the second D-type flip-flop 20 or disconnecting it, instead of turning off the fourth P-type transistor Mp4 by an inverter to turn off the first The D-type flip-flop 10 is connected to the second D-type flip-flop 20.

(2).該主控電晶體Mj具有一或閘狀態及一及閘狀態,藉由該或閘狀態及該及閘狀態取代習知技術中之或閘電晶體與及閘電晶體,減少電晶體之數量,降低功率的消耗。 (2) The main control transistor Mj has a gate state and a gate state, and the gate state and the gate state replace the gate transistor and the gate transistor in the prior art to reduce electricity. The number of crystals reduces the power consumption.

(3).藉由該主控電晶體Mi之設置也解決了習知電路中之電流短 路問題。 (3). The current in the conventional circuit is also solved by the setting of the main control transistor Mi. Road problem.

因此本發明極具進步性及符合申請發明專利之要件,爰依法提出申請,祈 鈞局早日賜准專利,實感德便。 Therefore, the present invention is highly progressive and conforms to the requirements of the invention patent application, and the application is filed according to law, and the praying office grants the patent as soon as possible.

以上已將本發明做一詳細說明,惟以上所述者,僅為本發明之一較佳實施例而已,當不能限定本發明實施之範圍。即凡依本發明申請範圍所作之均等變化與修飾等,皆應仍屬本發明之專利涵蓋範圍內。 The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.

10‧‧‧第一D型正反器 10‧‧‧First D-type flip-flop

Mn1‧‧‧第一N型電晶體 Mn1‧‧‧First N-type transistor

Mn2‧‧‧第二N型電晶體 Mn2‧‧‧Second N-type transistor

Mn3‧‧‧第三N型電晶體 Mn3‧‧‧3rd N-type transistor

Mp1‧‧‧第一P型電晶體 Mp1‧‧‧First P-type transistor

Mp2‧‧‧第二P型電晶體 Mp2‧‧‧Second P-type transistor

Mp3‧‧‧第三P型電晶體 Mp3‧‧‧ Third P-type transistor

out‧‧‧第一輸出端 Out‧‧‧first output

20‧‧‧第二D型正反器 20‧‧‧Second D-type flip-flop

Mn4‧‧‧第四N型電晶體 Mn4‧‧‧4th N-type transistor

Mn5‧‧‧第五N型電晶體 Mn5‧‧‧ fifth N-type transistor

Mn6‧‧‧第六N型電晶體 Mn6‧‧‧ sixth N-type transistor

Mp4‧‧‧第四P型電晶體 Mp4‧‧‧4th P-type transistor

Mp5‧‧‧第五P型電晶體 Mp5‧‧‧ fifth P-type transistor

Mp6‧‧‧第六P型電晶體 Mp6‧‧‧6th P-type transistor

in‧‧‧第二資料輸入端 In‧‧‧Second data input

Mj‧‧‧主控電晶體 Mj‧‧‧main control transistor

mc‧‧‧模態控制訊號 Mc‧‧‧modal control signal

clk1‧‧‧第一時脈輸入端 Clk1‧‧‧first clock input

clk2‧‧‧第二時脈輸入端 Clk2‧‧‧second clock input

Claims (4)

一種高速雙模預除器,其用以供一時脈訊號輸入,包括有:一第一D型正反器,其包含有一第一N型電晶體、一第二N型電晶體、一第三N型電晶體、一第一P型電晶體、一第二P型電晶體、一第三P型電晶體、一第一輸出端及一第一時脈輸入端,每個N型電晶體與P型電晶體皆具有一汲極、一源極及一閘極,該第一P型電晶體之源極與該第一N型電晶體之汲極連接,並作為該第一輸出端,該第二P型電晶體之源極與該第二N型電晶體之汲極連接,該第三P型電晶體之源極與該第三N型電晶體之汲極連接,該時脈訊號藉由該第一時脈輸入端輸入至該第一D型正反器;一第二D型正反器,其包含有一第二資料輸入端及一第二時脈輸入端,該時脈訊號藉由該第二時脈輸入端輸入至該第二D型正反器;及一主控電晶體,其具有一汲極、一源極及一閘極,該汲極與該第一輸出端連接,該源極與該第二資料輸入端連接。 A high-speed dual-mode pre-discharger for inputting a clock signal, comprising: a first D-type flip-flop comprising a first N-type transistor, a second N-type transistor, and a third An N-type transistor, a first P-type transistor, a second P-type transistor, a third P-type transistor, a first output terminal and a first clock input terminal, each N-type transistor and Each of the P-type transistors has a drain, a source and a gate, and a source of the first P-type transistor is connected to a drain of the first N-type transistor and serves as the first output terminal. a source of the second P-type transistor is connected to a drain of the second N-type transistor, and a source of the third P-type transistor is connected to a drain of the third N-type transistor, and the clock signal is borrowed The first clock input terminal is input to the first D-type flip-flop; the second D-type flip-flop includes a second data input terminal and a second clock input terminal, and the clock signal is borrowed Inputting from the second clock input terminal to the second D-type flip-flop; and a main control transistor having a drain, a source and a gate, the drain being connected to the first output The source electrode connected to the second data input terminal. 如申請專利範圍第1項所述之高速雙模預除器,其中該第二D型正反器包含有一第四N型電晶體、一第五N型電晶體、一第六N型電晶體、一第四P型電晶體、一第五P型電晶體及一第六P型電晶體,每個N型電晶體與P型電晶體皆具有一汲極、一源極及一閘極,該第四P型電晶體之源極與該第四N型電晶體之汲極連接,該第五P型電晶體之源極與該第五N型電晶體之汲極連接,該第六P型電晶體之源極與該第六N型電晶體之汲極連接。 The high-speed dual-mode pre-processor according to claim 1, wherein the second D-type flip-flop comprises a fourth N-type transistor, a fifth N-type transistor, and a sixth N-type transistor. a fourth P-type transistor, a fifth P-type transistor, and a sixth P-type transistor, each of the N-type transistor and the P-type transistor having a drain, a source, and a gate. a source of the fourth P-type transistor is connected to a drain of the fourth N-type transistor, and a source of the fifth P-type transistor is connected to a drain of the fifth N-type transistor, the sixth P The source of the type transistor is connected to the drain of the sixth N-type transistor. 如申請專利範圍第2項所述之高速雙模預除器,其中該第四P型電晶體之源極與該第四N型電晶體之汲極連接的位置為該第二資料輸入端。 The high-speed dual-mode pre-discharge device according to claim 2, wherein a position at which a source of the fourth P-type transistor is connected to a drain of the fourth N-type transistor is the second data input end. 如申請專利範圍第1項所述之高速雙模預除器,其中該主控電晶體為一P型電晶體。 The high speed dual mode pre-disconnector of claim 1, wherein the main control transistor is a P-type transistor.
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