TWI415381B - Bi-direction driver ic and method for bi-directionally driving an object - Google Patents

Abstract

The present invention discloses a bi-direction driver IC and a method for bi-directionally driving an object. The method comprises: providing a first and a second integrated circuit (IC) chips, coupled with an object to be driven, wherein each of the first and second IC chips is capable of single-directionally driving the object; providing a reverse current path in each of the first and second IC chips; driving the object in a first direction by the first IC chip, wherein current flows through the reverse current path in the second IC chip; and driving the object in a second direction by the second IC chip, wherein current flows through the reverse current path in the first IC chip.

Description

Bidirectional driving integrated circuit and bidirectional driving method

The present invention relates to a bidirectional drive IC and a method of bidirectionally driving an object (e.g., controlling the bidirectional rotation of the motor).

In some applications, an object such as a motor must be capable of controlled two-way rotation, such as in a vehicle rear view mirror control system. Referring to FIG. 1 , the prior art bidirectional motor drive IC is a three-wire module. In order to control the forward and reverse rotation of the motor M, it must have three pins, including two power pins and one control pin. The positive power pin is coupled to the positive voltage, the negative power pin is grounded (or the negative voltage), and the third control pin CTL is coupled to the external input signal to control the forward and reverse of the motor according to the external input signal. In the above prior art, the two power pins are not interchangeable, the positive power pin must be connected to a positive voltage, and the negative power pin must be grounded (or a negative voltage). However, in some applications, only two AC power lines are provided. For example, in the control system of the aforementioned vehicle rear mirror, most of the current models only provide two AC power lines. In this case, the above three-wire module cannot For use, there is no control signal on the one hand, and the other three-wire module cannot cooperate with the AC power line.

Since the current of the IC must flow from the power source to the ground, the power pin cannot be reversed. If the IC is not connected, the IC will not work or even be damaged. Therefore, there is no two-wire bidirectional motor driver IC in the past. In the aforementioned vehicle backlight or similar control system, if two AC power lines are required, the prior art constitutes a control circuit by a plurality of discrete devices, and cannot be fabricated into a general-purpose IC.

In view of the above, the present invention is directed to the above-mentioned deficiencies of the prior art, and proposes a bidirectional driving IC that requires only two power pins, which can be coupled with an alternating current source with alternating positive and negative voltage inputs, and the driving IC can change the direction of the output current. Therefore, it can be used for (but not limited to) driving a motor that needs to rotate in both directions. Moreover, the present invention also proposes a method of bidirectionally driving an object such as, but not limited to, a motor.

One of the objects of the present invention is to provide a bidirectional drive IC.

Another object of the present invention is to provide a method of bidirectional driving.

In order to achieve the above object, in one aspect, the present invention provides a bidirectional driving IC comprising: a first power receiving node for receiving a first power source; and a second power receiving node for receiving a second power source; a first chip is coupled to the first power receiving node, the at least one first chip comprises: a first transistor; a first diode connected in parallel with the first transistor, the first diode An anode-cathode direction opposite to a current direction of the first transistor; and a first control circuit that controls driving of the first transistor, the first control circuit receiving power directly or indirectly from a second power source; at least one second The chip is coupled to the second power receiving node, the at least one second wafer comprises: a second transistor; a second diode connected in parallel with the second transistor, and an anode and a cathode of the second diode a direction opposite to a current direction of the second transistor; and a second control circuit that controls driving of the second transistor, the second control circuit directly or indirectly from the first power source Receiving power; wherein, when the first power source is a positive voltage, current flows through the first diode to the second wafer, causing the second control circuit to drive the second transistor; when the second power source is a positive voltage The current flows through the second diode to the first wafer, causing the first control circuit to drive the first transistor.

In the above bidirectional driving IC, the first and second transistors may be MOS transistors or bipolar transistors. In the case of an MOS transistor, the first and second diodes may be parasitic diodes of the MOS transistor.

In one embodiment, the first chip has a first grounding pin coupled to the first power receiving node, and the second chip has a second grounding pin coupled to the second power receiving node, and the The first grounding pin and the second grounding pin are insulated from each other; for example, an insulating glue can be used for the insulation.

In one embodiment, the first or second wafer may further include: a first electrostatic protection diode connected in parallel with the first transistor, or a second electrostatic protection diode and the second The crystals are connected in parallel, and the first or second electrostatic protection diode can also act as a path for current to flow in the opposite direction.

In another aspect, the present invention provides a bidirectional driving method, comprising: providing first and second integrated circuit chips respectively coupled to an object to be driven, wherein the first and second integrated circuit chips Each having a function of driving a unidirectional object; each of the first and second integrated circuit wafers is provided with a reverse current path; and the first integrated circuit wafer drives the object forward, and the current flows backwards a second integrated circuit wafer; and the object is driven in reverse by the second integrated circuit wafer, at which time current flows backward through the first integrated circuit wafer.

The purpose, technical content, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments.

The illustrations in this specification are schematic, and the shapes and sizes are not drawn to scale.

Referring to Figure 2, an embodiment of the present invention is shown in circuit diagram form. As shown in the figure, in the embodiment, the bidirectional driving IC 30 integrates the first wafer 21 and the second wafer 22 into the same IC, wherein the first and second wafers respectively include the first and second control circuits 11, 12 The first and second transistors Q1, Q2 are controlled to be turned on and off, respectively. The bidirectional drive IC 30 has first and second power receiving nodes PW1, PW2 that can receive AC power. The ground pin Gnd1 of the first wafer 21 is coupled to the first power receiving node PW1, and the ground pin Gnd2 of the second chip 22 is coupled to the second power receiving node PW2. In addition, the first and second transistors Q1 and Q2 are respectively connected in anti-parallel with the first and second diodes D1 and D2, and the “anti-parallel connection” refers to the anode-cathode direction of the first diode D1 and the flow of the first diode. The current direction of one transistor Q1 is opposite, and the anode-cathode direction of the second diode D2 is opposite to the current flowing through the second transistor Q2, thus constituting a reverse current path. In this embodiment, the first and second transistors Q1 and Q2 are MOS transistors, so the first and second diodes D1 and D2 may be parasitic diodes of the first and second transistors Q1 and Q2; The first transistor Q1 is exemplified, and its semiconductor structure can be, for example, as shown in FIG. However, of course, the first and second diodes D1, D2 may not be the parasitic diodes of the first and second transistors Q1, Q2, but may be separately provided diodes.

In the first wafer 21, the internal power source Vcc1 of the first control circuit 11 is directly or indirectly from the second power receiving node PW2; in the second wafer 22, the internal power source Vcc2 of the second control circuit 21 is directly or indirectly from the first power source. Receive node PW1. When the driving motor M needs to be rotated in the forward direction, the first transistor Q1 is driven by the first control circuit 11 to control the current of the motor rotation. At this time, the power is received by the second power source receiving node PW2 via the grounding of the second wafer 22. The leg Gnd2, the second diode D2, the motor M, the first transistor Q1, and the ground pin Gnd1 of the first wafer 21 are circulated. In this case, the second control circuit 12 does not operate, and the internal power source Vcc1 of the first control circuit 11 can be obtained, for example, through the path of the broken line in the figure.

When the driving motor M needs to be reversely rotated, the mode is similar, and the second transistor Q2 is driven by the second control circuit 12 to control the current of the motor rotation. At this time, the power is received by the first power source receiving node PW1 through the first The ground pin Gnd1 of the wafer 21, the first diode D1, the motor M, the second transistor Q2, and the ground pin Gnd2 of the second wafer 22 are circulated. In this case, the first control circuit 11 does not operate, and the internal power source Vcc2 of the second control circuit 12 can be obtained, for example, through a path of a broken line in the figure.

Of course, the path from the first power receiving node PW1 to the internal power source Vcc2 (or from the second power receiving node PW2 to the internal power source Vcc1) is not limited to that shown in FIG. 2, but may be any other manner, for example, the internal power source Vcc1 may be directly The internal power supply Vcc2 can be coupled to the upper end of the motor M (the internal power supply Vcc2 can be coupled to the lower end of the motor M). The internal power supply Vcc2 can be coupled to the first power receiving node PW1. )Wait. FIG. 2A shows another way, in which the internal power sources Vcc1 and Vcc2 of the two control circuits 11 and 12 are butted, and a reverse direction (anode-cathode direction and power supply) is respectively provided between the power sources Vcc1 and Vcc2 and the ground pins Gnd1 and Gnd2. a diode of the opposite direction of the grounding, which may be, for example, a parasitic diode of the circuit itself. In this way, the internal power supplies Vcc1, Vcc2 required for the two control circuits 11, 12 are also provided.

In order to avoid or reduce damage to the semiconductor component caused by static electricity, it is often necessary to use an electrostatic protection diode in the circuit. According to the invention, the electrostatic protection diode can also be used as a reverse current path, that is, in addition to the first or second electricity. The parasitic diode of the crystal may further include an electrostatic protection diode connected in parallel thereto; the first wafer 21 is exemplified, and the circuit thereof is, for example, as shown in FIG. In the case of a semiconductor structure, for example, the first or second transistor is an NMOS transistor, and the method of performing the method is not only directly providing a first or second electrostatic protection diode DS connected in parallel thereto, but also a drain of the transistor. Doped a heavily doped region P+ nearby (please refer to section 5) Figure, taking NMOS as an example). In detail, the concentrated doped region P+ and the source at the other end of the gate form a diode DS, which provides electrostatic protection on the one hand and reverse current path when the motor M is driven bidirectionally on the other hand.

As described above, when the first transistor Q1 is driven, the second ground pin Gnd2 receives a positive voltage and the first ground pin Gnd1 is grounded (or a negative voltage); when the second transistor Q2 is driven, the first ground The pin Gnd1 receives a positive voltage and the second ground pin Gnd2 is grounded (or a negative voltage). The two ground pins Gnd1 and Gnd2 have different potentials. Therefore, although they are all "grounding" pins, they cannot be short-circuited and must be insulated from each other. The insulation may be in any manner as long as the two pins are not short-circuited, but to facilitate the integration of the package, please refer to FIG. 6 , in which the first wafer 21 and the second wafer 22 can be insulated by an insulating material. 50 is electrically isolated from each other. The insulating material 50 can be, for example, a viscous insulating glue, so that the two wafers can be bonded to the grounded lead frame 40 to be packaged into a bidirectional driving IC.

The MOS transistors Q1, Q2 in the foregoing embodiments can be replaced with the bi-carrier transistors B1, B2, as shown in Fig. 7, which is also within the scope of the present invention. Further, as in the embodiment of the MOS transistor, the path from the first power receiving node PW1 to the internal power source Vcc2 (or from the second power receiving node PW2 to the internal power source Vcc1) is not limited to that shown in FIG. 7, but may be any For other methods, please refer to the descriptions of Figures 2 and 2A above.

The two-way driving IC proposed in the foregoing embodiments can be used to control a motor or other applications requiring two-way current flow, for example, to drive a vehicle rearview mirror, a projection screen of a projector, a support for an optical disc to be telescopic, or Electric door, and so on.

The present invention has been described with reference to the preferred embodiments thereof, and the present invention is not intended to limit the scope of the present invention. For example, the combination of the first transistor and the second transistor of the present invention is not limited to two MOS transistors or both are bipolar transistors, and the combination thereof may also be a MOS transistor, one double load Sub-transistor. Further, the bidirectional driving IC is not limited to having only one first wafer and one second wafer, but may have a larger number of wafers. In the same spirit of the invention, various equivalent changes can be made by those skilled in the art, and are intended to be included within the scope of the invention.

11. . . First control circuit

12. . . Second control circuit

twenty one. . . First wafer

twenty two. . . Second chip

30. . . Bidirectional drive integrated circuit

40. . . Ground wire frame

50. . . Insulation Materials

B1. . . First double carrier transistor

B2. . . Second bipolar transistor

D1. . . First diode

D2. . . Second diode

DS. . . Electrostatic protection diode

Gnd1. . . First grounding pin

Gnd2. . . Second grounding pin

M. . . motor

PW1. . . First power receiving node

PW2. . . Second power receiving node

Q1. . . First transistor

Q2. . . Second transistor

Vcc1. . . First internal power supply

Vcc2. . . Second internal power supply

Figure 1 shows a prior art three-wire module that controls motor rotation.

Fig. 2 shows a first embodiment of the invention in the form of a circuit diagram.

Figure 2A illustrates one of the ways in which internal power supplies Vcc1, Vcc2 are provided.

Figure 3 shows the semiconductor structure of the transistor and the parasitic diode.

The fourth diagram shows a second embodiment of the present invention in the form of a circuit diagram.

Figure 5 shows the semiconductor structure of the transistor and the electrostatic protection diode.

Figure 6 shows that the ground pins of the first and second wafers are preferably insulated from each other.

Fig. 7 shows a third embodiment of the invention in the form of a circuit diagram.

11. . . First control circuit

12. . . Second control circuit

twenty one. . . First wafer

twenty two. . . Second chip

30. . . Bidirectional drive integrated circuit

D1. . . First diode

D2. . . Second diode

Gnd1. . . First grounding pin

Gnd2. . . Second grounding pin

M. . . motor

PW1. . . First power receiving node

PW2. . . Second power receiving node

Q1. . . First transistor

Q2. . . Second transistor

Vcc1. . . First internal power supply

Vcc2. . . Second internal power supply

Claims (6)

A bidirectional drive integrated circuit (IC) comprising: a first power receiving node for receiving a first power source; a second power receiving node for receiving a second power source; at least one first chip and the first power receiving node Coupling, the at least one first wafer comprises: a first transistor; a first diode connected in parallel with the first transistor, an anode-cathode direction of the first diode and the first transistor The current direction is opposite; and a first control circuit controls driving of the first transistor, the first control circuit receives power directly or indirectly from the second power source; the at least one second chip is coupled to the second power receiving node, The at least one second wafer comprises: a second transistor; a second diode connected in parallel with the second transistor, the anode-cathode direction of the second diode is opposite to the current of the second transistor And a second control circuit for controlling driving of the second transistor, the second control circuit receiving power directly or indirectly from the first power source; wherein, when the first power source is a positive voltage, Flowing through the first diode to the second wafer, causing the second control circuit to drive the second transistor; when the second power source is a positive voltage, current flows to the first chip through the second diode And causing the first control circuit to drive the first transistor. The bidirectional driving IC of claim 1, wherein the first chip has a first grounding pin coupled to the first power receiving node, the second chip The second grounding pin is coupled to the second power receiving node, and the first grounding pin and the second grounding pin are insulated from each other. The bidirectional driving IC of claim 2, wherein the first grounding pin of the first chip and the second grounding pin of the second chip are insulated from each other by an insulating glue. The bidirectional driving IC of claim 1, wherein the first wafer further comprises a first electrostatic protection diode connected in parallel with the first transistor; or the second wafer further comprises a second electrostatic protection 2 The pole body is connected in parallel with the second transistor. The bidirectional driving IC according to claim 1, wherein the first transistor is an MOS transistor, and the first diode is a parasitic diode of the first transistor; the second transistor is a MOS a transistor, and the second diode is a parasitic diode of the second transistor. The bidirectional driving IC of claim 1, wherein the first transistor and the second transistor are bipolar transistors.