TWI414987B - Liquid crystal display having touch sensing functionality and touch sensing method thereof - Google Patents
Liquid crystal display having touch sensing functionality and touch sensing method thereof Download PDFInfo
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本發明係有關於一種液晶顯示裝置,尤指一種具觸碰感測功能之液晶顯示裝置與其觸碰感測方法。The invention relates to a liquid crystal display device, in particular to a liquid crystal display device with a touch sensing function and a touch sensing method thereof.
液晶顯示裝置(Liquid Crystal Display,LCD)具有外型輕薄、省電以及低輻射等優點,因此已被廣泛地應用於多媒體播放器、行動電話、個人數位助理(PDA)、電腦顯示器、或平面電視等電子產品上。此外,利用液晶顯示裝置執行觸碰輸入的功能已漸成流行,亦即,觸碰式液晶顯示裝置的應用越來越廣泛。一般而言,觸碰式液晶顯示裝置的觸碰面板以電阻式觸碰面板及電容式觸碰面板為主。電阻式觸碰面板係以電壓降定位觸碰位置,但無法提供多點觸碰感測功能。電容式觸碰面板通常包含感應電容,其係將對應於觸碰點之感應電容的電容變化作訊號處理而定位出觸碰位置。Liquid crystal display (LCD) has the advantages of slimness, power saving and low radiation, so it has been widely used in multimedia players, mobile phones, personal digital assistants (PDAs), computer monitors, or flat-panel TVs. And other electronic products. In addition, the function of performing touch input using a liquid crystal display device has become popular, that is, the application of the touch type liquid crystal display device has become more and more widespread. Generally, the touch panel of the touch type liquid crystal display device mainly includes a resistive touch panel and a capacitive touch panel. The resistive touch panel is positioned with a voltage drop to locate the touch, but does not provide multi-touch sensing. Capacitive touch panels typically include a sensing capacitor that signals the change in capacitance of the sensing capacitor corresponding to the touch point to locate the touch location.
第1圖為習知觸碰面板裝置的結構示意圖。如第1圖所示,觸碰面板裝置100包含觸碰面板101、複數讀出線110、複數感應電容120、複數儲存電容140、以及複數比較器150。當觸碰面板101被觸碰時,對應於觸碰位置的感應電容120之電容值會變化,導致其電容電壓跟著變化,此電容電壓的變化會經由對應讀出線110傳輸至對應儲存電容140,再利用對應比較器150執行儲存電容140之電容電壓與參考電壓Vref的比較處理即可產生觸碰讀出訊號Sro。然而,隨著觸碰面板101之尺寸的增大,讀出線110的線電阻跟著增大,所以在感應電容120的電容電壓之變化量傳輸至儲存電容140後,會因線電阻之壓降而顯著減小,導致低觸碰靈敏度。另由於讀出線110的寄生電容也跟著增大,如此會使電容電壓的傳輸延遲更嚴重,因而降低觸碰反應速度。此外,對於追求外型輕薄與低成本之顯示裝置而言,外貼於顯示面板之觸碰面板101並無法滿足要求。FIG. 1 is a schematic structural view of a conventional touch panel device. As shown in FIG. 1, the touch panel device 100 includes a touch panel 101, a plurality of readout lines 110, a plurality of sense capacitors 120, a plurality of storage capacitors 140, and a plurality of comparators 150. When the touch panel 101 is touched, the capacitance value of the sensing capacitor 120 corresponding to the touch position changes, causing the capacitance voltage to change accordingly. The change of the capacitor voltage is transmitted to the corresponding storage capacitor 140 via the corresponding readout line 110. Then, the comparison comparator 150 performs a comparison process between the capacitance voltage of the storage capacitor 140 and the reference voltage Vref to generate the touch read signal Sro. However, as the size of the touch panel 101 increases, the line resistance of the sense line 110 increases, so after the amount of change in the capacitance voltage of the sense capacitor 120 is transferred to the storage capacitor 140, the voltage drop due to the line resistance Significantly reduced, resulting in low touch sensitivity. In addition, since the parasitic capacitance of the sense line 110 is also increased, the transmission delay of the capacitor voltage is more severe, thereby reducing the touch reaction speed. In addition, for a display device that is thin and low in appearance, the touch panel 101 attached to the display panel cannot meet the requirements.
依據本發明之實施例,其揭露一種具觸碰感測功能之液晶顯示裝置,其包含用來傳輸畫素閘極訊號之畫素閘極線、用來傳輸畫素資料訊號之畫素資料線、電連接於畫素閘極線與畫素資料線之畫素單元、用來傳輸第一感測閘極訊號之第一感測閘極線、用來傳輸第二感測閘極訊號之第二感測閘極線、用來傳輸偏壓訊號之偏壓線、感測單元、讀出線、以及訊號處理電路。畫素單元係用來根據畫素閘極訊號與畫素資料訊號以輸出影像訊號。感測單元電連接於第一感測閘極線、第二感測閘極線與偏壓線,用來根據第一感測閘極訊號、第二感測閘極訊號與偏壓訊號以提供讀出訊號。讀出線電連接於感測單元,用來傳輸讀出訊號。訊號處理電路電連接於讀出線,用來根據讀出訊號以定位觸碰位置。According to an embodiment of the invention, a liquid crystal display device with a touch sensing function is disclosed, which comprises a pixel gate line for transmitting a pixel gate signal and a pixel data line for transmitting a pixel data signal. a pixel unit electrically connected to the pixel gate line and the pixel data line, a first sensing gate line for transmitting the first sensing gate signal, and a second sensing signal for transmitting the second sensing gate signal The second sensing gate line, the bias line for transmitting the bias signal, the sensing unit, the readout line, and the signal processing circuit. The pixel unit is used to output an image signal based on the pixel gate signal and the pixel data signal. The sensing unit is electrically connected to the first sensing gate line, the second sensing gate line and the bias line for providing according to the first sensing gate signal, the second sensing gate signal and the bias signal Read the signal. The sense line is electrically connected to the sensing unit for transmitting the read signal. The signal processing circuit is electrically connected to the readout line for positioning the touch position based on the read signal.
本發明另揭露一種觸碰感測方法,用於具觸碰感測功能之液晶顯示裝置以定位觸碰位置。此液晶顯示裝置包含用來傳輸第一感測閘極訊號之第一感測閘極線、用來傳輸第二感測閘極訊號之第二感測閘極線、用來傳輸偏壓訊號之偏壓線、感測單元、讀出線、以及訊號處理電路。感測單元係用來根據第一感測閘極訊號、第二感測閘極訊號與偏壓訊號以提供類比讀出訊號。讀出線傳輸類比讀出訊號至訊號處理電路,而訊號處理電路即用來根據類比讀出訊號以定位觸碰位置。The invention further discloses a touch sensing method for a liquid crystal display device with a touch sensing function to position a touch position. The liquid crystal display device includes a first sensing gate line for transmitting a first sensing gate signal, a second sensing gate line for transmitting a second sensing gate signal, and a transmission bias signal. A bias line, a sensing unit, a readout line, and a signal processing circuit. The sensing unit is configured to provide an analog read signal according to the first sensing gate signal, the second sensing gate signal and the bias signal. The read line transmits an analog read signal to the signal processing circuit, and the signal processing circuit is used to read the signal according to the analog to locate the touch position.
此種觸碰感測方法包含:於第一時段內,提供具第一脈波之第二感測閘極訊號至第二感測閘極線;於第一時段內,提供具與第一脈波重疊的第二脈波之偏壓訊號至偏壓線;於第一時段內,感測單元根據第二感測閘極訊號之第一脈波與偏壓訊號之第二脈波以執行充電程序;於第二時段內,感測單元執行放電程序以產生感測電壓;於第三時段內,提供具第三脈波之第一感測閘極訊號至第一感測閘極線,感測單元根據感測電壓與第一感測閘極訊號之第三脈波以提供類比讀出訊號饋入至讀出線;於第三時段內,訊號處理電路將類比讀出訊號轉換為數位讀出訊號;以及於第四時段內,訊號處理電路根據數位讀出訊號以定位觸碰位置。The touch sensing method includes: providing a second sensing gate signal having a first pulse wave to a second sensing gate line in a first time period; providing a first pulse in the first time period The second pulse of the second pulse wave overlaps the bias line; in the first time period, the sensing unit performs charging according to the first pulse of the second sensing gate signal and the second pulse of the bias signal a second time period, the sensing unit performs a discharging process to generate a sensing voltage; and during a third time period, providing a first sensing gate signal having a third pulse wave to the first sensing gate line, The measuring unit supplies the analog read signal to the read line according to the sensing voltage and the third pulse of the first sensing gate signal; in the third time period, the signal processing circuit converts the analog read signal into a digital read The signal signal; and during the fourth time period, the signal processing circuit reads the signal according to the digit to locate the touch position.
下文依本發明具觸碰感測功能之液晶顯示裝置與其觸碰感測方法,特舉實施例配合所附圖式作詳細說明,但所提供之實施例並非用以限制本發明所涵蓋的範圍,而方法流程步驟編號更非用以限制其執行先後次序,任何由方法步驟重新組合之執行流程,所產生具有均等功效的方法,皆為本發明所涵蓋的範圍。The liquid crystal display device with the touch sensing function and the touch sensing method thereof are described in detail below with reference to the accompanying drawings, but the embodiments provided are not intended to limit the scope of the present invention. The method flow step number is not intended to limit its execution order. Any method that is recombined by method steps and produces equal effect is the scope covered by the present invention.
第2圖為本發明第一實施例之具觸碰感測功能的液晶顯示裝置。如第2圖所示,液晶顯示裝置200包含複數條畫素閘極線201、複數條畫素資料線202、複數畫素單元205、複數條感測閘極線210、複數條偏壓線215、複數條讀出線220、複數感測單元230、以及訊號處理電路250。每一條畫素閘極線201係用來傳輸對應畫素閘極訊號。每一條畫素資料線202係用來傳輸對應畫素資料訊號。每一畫素單元205包含畫素電晶體Qpx、液晶電容Clc與第一儲存電容Cst1。畫素電晶體Qpx可為薄膜電晶體或場效電晶體。畫素電晶體Qpx電連接於對應畫素閘極線201與對應畫素資料線202,用來根據對應畫素閘極訊號以控制對應畫素資料訊號之寫入運作,而畫素單元205即根據被寫入之對應畫素資料訊號以輸出對應影像訊號。每一條讀出線220電連接於複數對應感測單元230,用來傳輸對應類比讀出訊號。Fig. 2 is a view showing a liquid crystal display device with a touch sensing function according to a first embodiment of the present invention. As shown in FIG. 2, the liquid crystal display device 200 includes a plurality of pixel gate lines 201, a plurality of pixel data lines 202, a plurality of pixel units 205, a plurality of sensing gate lines 210, and a plurality of bias lines 215. And a plurality of readout lines 220, a plurality of sensing units 230, and a signal processing circuit 250. Each pixel gate line 201 is used to transmit a corresponding pixel gate signal. Each pixel data line 202 is used to transmit a corresponding pixel data signal. Each pixel unit 205 includes a pixel transistor Qpx, a liquid crystal capacitor Clc, and a first storage capacitor Cst1. The pixel transistor Qpx can be a thin film transistor or a field effect transistor. The pixel transistor Qpx is electrically connected to the corresponding pixel gate line 201 and the corresponding pixel data line 202 for controlling the writing operation of the corresponding pixel data signal according to the corresponding pixel gate signal, and the pixel unit 205 is The corresponding image signal is output according to the corresponding pixel data signal written. Each of the readout lines 220 is electrically coupled to the plurality of corresponding sense units 230 for transmitting corresponding analog read signals.
訊號處理電路250包含複數開關255、複數比較器260、多工器270、記憶單元280、以及訊號定位單元290。每一開關255電連接於對應讀出線220,用來將對應類比讀出訊號之電壓重置為低電源電壓Vss。每一比較器260包含正輸入端、負輸入端與輸出端,其中正輸入端用來接收參考電壓Vref,負輸入端電連接於對應讀出線220以接收對應類比讀出訊號,輸出端電連接於多工器270,用來輸出對應類比讀出訊號與參考電壓Vref比較所產生之對應數位讀出訊號。舉例而言,比較器CP_j電連接於讀出線RLj,用來比較類比讀出訊號Sroa_j與參考電壓Vref以產生數位讀出訊號Srod_j,而比較器CP_m則電連接於讀出線RLm,用來比較類比讀出訊號Sroa_m與參考電壓Vref以產生數位讀出訊號Srod_m。在另一實施例中,比較器260之正輸入端係電連接於對應讀出線220以接收對應類比讀出訊號,而比較器260之負輸入端則用來接收參考電壓Vref。多工器270電連接於複數比較器260,用來將複數比較器260所產生之複數數位讀出訊號依序輸出至記憶單元280。記憶單元280電連接於多工器270,用來儲存多工器270依序輸出之複數數位讀出訊號。訊號定位單元290電連接於記憶單元280,用來根據複數數位讀出訊號以產生觸碰位置訊號Spos。The signal processing circuit 250 includes a plurality of switches 255, a plurality of comparators 260, a multiplexer 270, a memory unit 280, and a signal locating unit 290. Each switch 255 is electrically coupled to the corresponding sense line 220 for resetting the voltage of the corresponding analog read signal to a low supply voltage Vss. Each comparator 260 includes a positive input terminal, a negative input terminal and an output terminal, wherein the positive input terminal is used to receive the reference voltage Vref, and the negative input terminal is electrically connected to the corresponding readout line 220 to receive the corresponding analog read signal, and the output terminal is electrically The multiplexer 270 is connected to output a corresponding digital read signal generated by comparing the analog read signal with the reference voltage Vref. For example, the comparator CP_j is electrically connected to the read line RLj for comparing the analog read signal Sroa_j with the reference voltage Vref to generate the digital read signal Srod_j, and the comparator CP_m is electrically connected to the read line RLm. The analog read signal Sroa_m is compared with the reference voltage Vref to generate a digital read signal Srod_m. In another embodiment, the positive input of comparator 260 is electrically coupled to corresponding sense line 220 for receiving a corresponding analog read signal, and the negative input of comparator 260 is for receiving a reference voltage Vref. The multiplexer 270 is electrically coupled to the complex comparator 260 for sequentially outputting the complex digital read signals generated by the complex comparator 260 to the memory unit 280. The memory unit 280 is electrically connected to the multiplexer 270 for storing the plurality of bit read signals sequentially output by the multiplexer 270. The signal locating unit 290 is electrically connected to the memory unit 280 for reading the signal according to the plurality of digits to generate the touch position signal Spos.
在第2圖所示之實施例中,每一畫素單元205均相鄰感測單元230。在另一實施例中,感測單元230係可間隔複數畫素閘極線201而設置,或間隔複數畫素資料線202而設置,亦即並非每一畫素單元205均與感測單元230相鄰。同理,感測閘極線210與偏壓線215可相對應地間隔複數畫素閘極線201而設置,或讀出線220可相對應地間隔複數畫素資料線202而設置。每一感測單元230包含第一電晶體231、第二電晶體232、第三電晶體233、第二儲存電容Cst2、以及觸碰感測器240。第一電晶體231與第二電晶體232可為N型薄膜電晶體(Thin Film Transistor)或N型場效電晶體(Field Effect Transistor)。第三電晶體233可為N型薄膜光電晶體(Photo-transistor)或N型場效光電晶體。下文依感測單元DXn_m以說明各元件之耦合關係與電路運作原理。In the embodiment shown in FIG. 2, each pixel unit 205 is adjacent to the sensing unit 230. In another embodiment, the sensing unit 230 can be disposed by spacing the plurality of pixel gate lines 201, or by spacing the plurality of pixel data lines 202, that is, not every pixel unit 205 and the sensing unit 230. Adjacent. Similarly, the sense gate line 210 and the bias line 215 may be disposed corresponding to the plurality of pixel gate lines 201, or the read line 220 may be correspondingly spaced apart by the plurality of pixel data lines 202. Each sensing unit 230 includes a first transistor 231, a second transistor 232, a third transistor 233, a second storage capacitor Cst2, and a touch sensor 240. The first transistor 231 and the second transistor 232 may be an N-type Thin Film Transistor or an N-type Field Effect Transistor. The third transistor 233 may be an N-type thin film photo-transistor or an N-type field effect photonic crystal. The sensing unit DXn_m is hereinafter described to explain the coupling relationship of each component and the circuit operation principle.
第一電晶體231包含第一端、第二端與閘極端,其中第一端用來接收高電源電壓Vdd,閘極端電連接於第二儲存電容Cst2,第二端電連接於第二電晶體232。第二電晶體232包含第一端、第二端與閘極端,其中第一端電連接於第一電晶體231之第二端,閘極端電連接於感測閘極線DGLn-1以接收感測閘極訊號SDGn-1,第二端電連接於讀出線RLm。第二儲存電容Cst2電連接於第一電晶體231之閘極端與感測閘極線DGLn之間。第三電晶體233包含第一端、第二端與閘極端,其中第一端電連接於第一電晶體231之閘極端,閘極端電連接於感測閘極線DGLn以接收感測閘極訊號SDGn,第二端電連接於偏壓線BLn。觸碰感測器240電連接於第一電晶體231之閘極端與偏壓線BLn之間。觸碰感測器240係基於接觸式機制或感應式機制以改變第一電晶體231之閘極端與偏壓線BLn之間的導電狀態,進而改變觸碰電流It的大小以調整第二儲存電容Cst2的放電速度,據以產生相對應之感測電壓Vd。如第2圖所示,第二儲存電容Cst2所儲存之感測電壓Vd係用來控制第一電晶體231的導通/截止狀態,進而控制將高電源電壓Vdd饋入至讀出線RLm以設定類比讀出訊號Sroa_m之電壓,所以感測電壓Vd之變化量並不受讀出線RLm之線電阻影響,換句話說,觸碰靈敏度不會因讀出線RLm之線電阻的增加而降低。此外,由於感測單元230係整合於包含畫素單元205之顯示面板內,所以可使液晶顯示裝置200之外型更輕薄,並能降低其生產成本。The first transistor 231 includes a first end, a second end and a gate terminal, wherein the first end is for receiving the high power supply voltage Vdd, the gate terminal is electrically connected to the second storage capacitor Cst2, and the second end is electrically connected to the second transistor. 232. The second transistor 232 includes a first end, a second end and a gate terminal, wherein the first end is electrically connected to the second end of the first transistor 231, and the gate terminal is electrically connected to the sensing gate line DGLn-1 to receive the sense The gate signal SDGn-1 is measured, and the second terminal is electrically connected to the readout line RLm. The second storage capacitor Cst2 is electrically connected between the gate terminal of the first transistor 231 and the sensing gate line DGLn. The third transistor 233 includes a first end, a second end and a gate terminal, wherein the first end is electrically connected to the gate terminal of the first transistor 231, and the gate terminal is electrically connected to the sensing gate line DGLn to receive the sensing gate The signal SDGn, the second end is electrically connected to the bias line BLn. The touch sensor 240 is electrically connected between the gate terminal of the first transistor 231 and the bias line BLn. The touch sensor 240 is based on a contact mechanism or an inductive mechanism to change the conductive state between the gate terminal of the first transistor 231 and the bias line BLn, thereby changing the magnitude of the touch current It to adjust the second storage capacitor. The discharge speed of Cst2 is accordingly generated to generate a corresponding sensing voltage Vd. As shown in FIG. 2, the sensing voltage Vd stored in the second storage capacitor Cst2 is used to control the on/off state of the first transistor 231, thereby controlling the high power supply voltage Vdd to be fed to the readout line RLm to set Analogously, the voltage of the signal Sroa_m is read, so the amount of change in the sense voltage Vd is not affected by the line resistance of the sense line RLm. In other words, the touch sensitivity is not lowered by the increase in the line resistance of the sense line RLm. In addition, since the sensing unit 230 is integrated in the display panel including the pixel unit 205, the liquid crystal display device 200 can be made thinner and thinner, and the production cost thereof can be reduced.
第3圖為第2圖之液晶顯示裝置200於感測週期內無觸碰事件之工作相關訊號波形示意圖,其中橫軸為時間軸。在第3圖中,由上往下的訊號分別為感測閘極訊號SDGn-1、感測閘極訊號SDGn、偏壓訊號Vb_n、對應於低環境光亮度之感測電壓Vd、以及對應於高環境光亮度之感測電壓Vd。如第3圖所示,於時段T1內,感測閘極訊號SDGn之電壓係為第一高電壓Vh1,據以導通第三電晶體233。此時偏壓訊號Vb_n具有大於第一高電壓Vh1之第二高電壓Vh2以充電第二儲存電容Cst2,感測電壓Vd因而上昇至飽和電壓Vsat。於時段T2內,感測閘極訊號SDGn之低電壓使第三電晶體233截止,而第二儲存電容Cst2則可藉由第三電晶體233的漏電流放電,所以感測電壓Vd就從飽和電壓Vsat逐漸降低。另由於第三電晶體233係為光電晶體,所以環境光亮度越高,第三電晶體233之漏電流越大,而第二儲存電容Cst2之放電速度也越快,亦即感測電壓Vd之下降速度越快。因此,如第3圖所示,對應於高環境光亮度之感測電壓Vd的下降速度係大於對應於低環境光亮度之感測電壓Vd的下降速度,但不論環境光亮度之高低,感測電壓Vd持續大於第一電晶體231之臨界電壓Vth,換句話說,第一電晶體231係持續保持在導通狀態。FIG. 3 is a schematic diagram showing the waveforms of the operation-related signals of the liquid crystal display device 200 of FIG. 2 without a touch event during the sensing period, wherein the horizontal axis is the time axis. In FIG. 3, the signals from top to bottom are the sense gate signal SDGn-1, the sense gate signal SDGn, the bias signal Vb_n, the sense voltage Vd corresponding to the low ambient light brightness, and the corresponding Sensing voltage Vd of high ambient light brightness. As shown in FIG. 3, during the period T1, the voltage of the sense gate signal SDGn is the first high voltage Vh1, thereby turning on the third transistor 233. At this time, the bias signal Vb_n has a second high voltage Vh2 greater than the first high voltage Vh1 to charge the second storage capacitor Cst2, and the sensing voltage Vd thus rises to the saturation voltage Vsat. During the period T2, the low voltage of the sense gate signal SDGn causes the third transistor 233 to be turned off, and the second storage capacitor Cst2 is discharged by the drain current of the third transistor 233, so the sense voltage Vd is saturated. The voltage Vsat gradually decreases. In addition, since the third transistor 233 is a photoelectric crystal, the higher the ambient light brightness, the larger the leakage current of the third transistor 233, and the faster the discharge speed of the second storage capacitor Cst2, that is, the sensing voltage Vd. The faster the rate of decline. Therefore, as shown in FIG. 3, the falling speed of the sensing voltage Vd corresponding to the brightness of the high ambient light is greater than the falling speed of the sensing voltage Vd corresponding to the low ambient light brightness, but regardless of the brightness of the ambient light, the sensing The voltage Vd continues to be greater than the threshold voltage Vth of the first transistor 231, in other words, the first transistor 231 is continuously maintained in an on state.
於時段T3內,感測閘極訊號SDGn-1之電壓係為第一高電壓Vh1以導通第二電晶體232,同時因感測電壓Vd仍大於臨界電壓Vth以導通第一電晶體231,所以高電源電壓Vdd可經由第一電晶體231與第二電晶體232而饋入至讀出線RLm,亦即類比讀出訊號Sroa_m之電壓被上拉至高電源電壓Vdd。此時,比較器CP_m將具高電源電壓Vdd之類比讀出訊號Sroa_m與參考電壓Vref比較以產生數位讀出訊號Srod_m,數位讀出訊號Srod_m經由多工器270傳送至記憶單元280。當數位讀出訊號Srod_m被儲存於記憶單元280後,對應開關255可導通以將類比讀出訊號Sroa_m之電壓重置為低電源電壓Vss。當所有數位讀出訊號於感測週期內依序儲存於記憶單元280後,訊號定位單元290即可根據記憶單元280所儲存之複數數位讀出訊號以產生觸碰位置訊號Spos。During the period T3, the voltage of the sense gate signal SDGn-1 is the first high voltage Vh1 to turn on the second transistor 232, and at the same time, since the sense voltage Vd is still greater than the threshold voltage Vth to turn on the first transistor 231, The high power supply voltage Vdd can be fed to the sense line RLm via the first transistor 231 and the second transistor 232, that is, the voltage of the analog read signal Sroa_m is pulled up to the high power supply voltage Vdd. At this time, the comparator CP_m compares the analog read signal Sroa_m having the high power supply voltage Vdd with the reference voltage Vref to generate the digital read signal Srod_m, and the digital read signal Srod_m is transmitted to the memory unit 280 via the multiplexer 270. When the digital read signal Srod_m is stored in the memory unit 280, the corresponding switch 255 can be turned on to reset the voltage of the analog read signal Sroa_m to the low power supply voltage Vss. After all the digital read signals are sequentially stored in the memory unit 280 in the sensing period, the signal positioning unit 290 can read the signals according to the plurality of bits stored in the memory unit 280 to generate the touch position signal Spos.
第4圖為第2圖之液晶顯示裝置200於感測週期內發生觸碰事件之工作相關訊號波形示意圖,其中橫軸為時間軸。在第4圖中,由上往下的訊號分別為感測閘極訊號SDGn-1、感測閘極訊號SDGn、偏壓訊號Vb_n、對應於低環境光亮度之感測電壓Vd、以及對應於高環境光亮度之感測電壓Vd。如第4圖所示,於時段T1內,感測閘極訊號SDGn之電壓係為第一高電壓Vh1,據以導通第三電晶體233。此時偏壓訊號Vb_n具有大於第一高電壓Vh1之第二高電壓Vh2以充電第二儲存電容Cst2,感測電壓Vd因而上昇至飽和電壓Vsat。於時段T2(前置放電時段)內,感測閘極訊號SDGn之低電壓使第三電晶體233截止,而第二儲存電容Cst2則可藉由第三電晶體233的漏電流放電,所以感測電壓Vd就從飽和電壓Vsat逐漸降低。同理,若環境光亮度越高,則第三電晶體233之漏電流越大,而第二儲存電容Cst2之放電速度也越快,亦即感測電壓Vd之下降速度越快。FIG. 4 is a schematic diagram showing the waveforms of the operation-related signals of the liquid crystal display device 200 of FIG. 2 in a sensing period, wherein the horizontal axis is the time axis. In FIG. 4, the signals from top to bottom are the sense gate signal SDGn-1, the sense gate signal SDGn, the bias signal Vb_n, the sense voltage Vd corresponding to the low ambient light brightness, and the corresponding Sensing voltage Vd of high ambient light brightness. As shown in FIG. 4, during the period T1, the voltage of the sense gate signal SDGn is the first high voltage Vh1, thereby turning on the third transistor 233. At this time, the bias signal Vb_n has a second high voltage Vh2 greater than the first high voltage Vh1 to charge the second storage capacitor Cst2, and the sensing voltage Vd thus rises to the saturation voltage Vsat. During the period T2 (pre-discharge period), the low voltage of the sense gate signal SDGn turns off the third transistor 233, and the second storage capacitor Cst2 can be discharged by the drain current of the third transistor 233. The measured voltage Vd gradually decreases from the saturation voltage Vsat. Similarly, if the ambient light brightness is higher, the leakage current of the third transistor 233 is larger, and the discharge speed of the second storage capacitor Cst2 is also faster, that is, the faster the detection voltage Vd is falling.
當發生觸碰事件時,第二儲存電容Cst2主要係藉由觸碰電流It快速放電,假設發生觸碰時段包含時段T3,T4或時段T3',T4',如此則對應於低環境光亮度之感測電壓Vd於時段T3及T4內快速下降,而對應於高環境光亮度之感測電壓Vd於時段T3'及T4'內快速下降。感測電壓Vd於時段T3/時段T3'內仍大於第一電晶體231之臨界電壓Vth,但感測電壓Vd於時段T4/時段T4'內則小於第一電晶體231之臨界電壓Vth,所以第一電晶體231於時段T4/時段T4'內切換為截止狀態。請注意,感測電壓Vd於時段T2(前置放電時段)內之下降量,可使第一電晶體231於發生觸碰事件後更快切換為截止狀態,因此可縮短時段T4/時段T4'之時間長度以提昇觸碰反應速度。此外,對應於高環境光亮度之感測電壓Vd於時段T2內之下降量,係大於對應於低環境光亮度之感測電壓Vd於時段T2內之下降量,所以發生觸碰事件後,時段T3'之時間長度係短於時段T3之時間長度。換句話說,環境光亮度越高,則發生觸碰事件後,第一電晶體231越快切換為截止狀態,據以使觸碰反應速度可根據環境光亮度而調整。When a touch event occurs, the second storage capacitor Cst2 is mainly discharged by the touch current It, and it is assumed that the touch period includes the period T3, T4 or the period T3', T4', thus corresponding to the low ambient light brightness. The sensing voltage Vd rapidly drops during the periods T3 and T4, and the sensing voltage Vd corresponding to the high ambient light luminance rapidly drops during the periods T3' and T4'. The sensing voltage Vd is still greater than the threshold voltage Vth of the first transistor 231 in the period T3 / period T3', but the sensing voltage Vd is smaller than the threshold voltage Vth of the first transistor 231 in the period T4 / period T4', so The first transistor 231 is switched to an off state within the period T4 / period T4'. Please note that the amount of decrease of the sensing voltage Vd in the period T2 (pre-discharge period) can cause the first transistor 231 to switch to the off state more quickly after the touch event occurs, thereby shortening the period T4/time period T4' The length of time to increase the speed of the touch reaction. In addition, the amount of decrease in the sensing voltage Vd corresponding to the high ambient light brightness in the period T2 is greater than the amount of decrease in the sensing voltage Vd corresponding to the low ambient light brightness in the period T2, so after the touch event occurs, the period The length of time T3' is shorter than the length of time period T3. In other words, the higher the ambient light brightness, the faster the first transistor 231 switches to the off state after the touch event occurs, so that the touch reaction speed can be adjusted according to the ambient light brightness.
於時段T5內,感測閘極訊號SDGn-1之電壓係為第一高電壓Vh1以導通第二電晶體232,但因感測電壓Vd係小於臨界電壓Vth以截止第一電晶體231,所以高電源電壓Vdd無法經由第一電晶體231與第二電晶體232而饋入至讀出線RLm,亦即類比讀出訊號Sroa_m保持在低電壓。此時,比較器CP_m將具低電壓之類比讀出訊號Sroa_m與參考電壓Vref比較以產生數位讀出訊號Srod_m,數位讀出訊號Srod_m經由多工器270傳送至記憶單元280。當數位讀出訊號Srod_m被儲存於記憶單元280後,對應開關255可導通以將類比讀出訊號Sroa_m之電壓重置為低電源電壓Vss。同理,當所有數位讀出訊號於感測週期內依序儲存於記憶單元280後,訊號定位單元290即可根據記憶單元280所儲存之複數數位讀出訊號以產生觸碰位置訊號Spos。During the period T5, the voltage of the sense gate signal SDGn-1 is the first high voltage Vh1 to turn on the second transistor 232, but since the sense voltage Vd is less than the threshold voltage Vth to turn off the first transistor 231, The high power supply voltage Vdd cannot be fed to the sense line RLm via the first transistor 231 and the second transistor 232, that is, the analog read signal Sroa_m is kept at a low voltage. At this time, the comparator CP_m compares the analog read signal Sroa_m having a low voltage with the reference voltage Vref to generate a digital read signal Srod_m, and the digital read signal Srod_m is transmitted to the memory unit 280 via the multiplexer 270. When the digital read signal Srod_m is stored in the memory unit 280, the corresponding switch 255 can be turned on to reset the voltage of the analog read signal Sroa_m to the low power supply voltage Vss. Similarly, when all the digital read signals are sequentially stored in the memory unit 280 during the sensing period, the signal positioning unit 290 can read the signals according to the plurality of bits stored in the memory unit 280 to generate the touch position signal Spos.
第5圖為本發明第二實施例之具觸碰感測功能的液晶顯示裝置。如第5圖所示,液晶顯示裝置300係類似於第2圖所示之液晶顯示裝置200,主要差異在於將訊號處理電路250置換為訊號處理電路350。訊號處理電路350包含複數開關355、多工器370、比較器360、記憶單元380、以及訊號定位單元390。每一開關355電連接於對應讀出線220,用來將對應類比讀出訊號之電壓重置為低電源電壓Vss。多工器370電連接於複數讀出線220,用來將複數類比讀出訊號依序輸出至比較器360。請注意,第2圖所示之多工器270係為數位多工器,而多工器370則為類比多工器。比較器360包含正輸入端、負輸入端與輸出端,其中正輸入端用來接收參考電壓Vref,負輸入端電連接於多工器370以依序接收類比讀出訊號,輸出端電連接於記憶單元380,用來輸出類比讀出訊號與參考電壓Vref比較所產生之數位讀出訊號。在另一實施例中,比較器360之正輸入端係電連接於多工器370以依序接收類比讀出訊號,而比較器360之負輸入端則用來接收參考電壓Vref。記憶單元380電連接於比較器360,用來儲存比較器360依序產生之數位讀出訊號。訊號定位單元390電連接於記憶單元380,用來根據複數數位讀出訊號以產生觸碰位置訊號Spos。液晶顯示裝置300運作時之感測閘極訊號SDGn-1、感測閘極訊號SDGn、偏壓訊號Vb_n以及感測電壓Vd的訊號波形,係大致同於第3圖與第4圖所示之波形,所以不再贅述其工作原理。Fig. 5 is a view showing a liquid crystal display device with a touch sensing function according to a second embodiment of the present invention. As shown in FIG. 5, the liquid crystal display device 300 is similar to the liquid crystal display device 200 shown in FIG. 2, and the main difference is that the signal processing circuit 250 is replaced with the signal processing circuit 350. The signal processing circuit 350 includes a plurality of switches 355, a multiplexer 370, a comparator 360, a memory unit 380, and a signal locating unit 390. Each switch 355 is electrically coupled to the corresponding sense line 220 for resetting the voltage of the corresponding analog read signal to a low supply voltage Vss. The multiplexer 370 is electrically coupled to the complex sense line 220 for sequentially outputting the complex analog read signals to the comparator 360. Note that the multiplexer 270 shown in FIG. 2 is a digital multiplexer, and the multiplexer 370 is an analog multiplexer. The comparator 360 includes a positive input terminal, a negative input terminal and an output terminal, wherein the positive input terminal is used to receive the reference voltage Vref, and the negative input terminal is electrically connected to the multiplexer 370 to sequentially receive the analog read signal, and the output terminal is electrically connected to the output terminal. The memory unit 380 is configured to output a digital read signal generated by comparing the analog read signal with the reference voltage Vref. In another embodiment, the positive input of the comparator 360 is electrically coupled to the multiplexer 370 for sequentially receiving the analog read signal, and the negative input of the comparator 360 is for receiving the reference voltage Vref. The memory unit 380 is electrically connected to the comparator 360 for storing the digital read signals sequentially generated by the comparator 360. The signal locating unit 390 is electrically connected to the memory unit 380 for reading the signal according to the plurality of bits to generate the touch position signal Spos. The signal waveforms of the sense gate signal SDGn-1, the sense gate signal SDGn, the bias signal Vb_n, and the sense voltage Vd during operation of the liquid crystal display device 300 are substantially the same as those shown in FIGS. 3 and 4. Waveforms, so we won't go into details about how it works.
第6圖為本發明第三實施例之具觸碰感測功能的液晶顯示裝置。如第6圖所示,液晶顯示裝置400係類似於第2圖所示之液晶顯示裝置200,主要差異在於將複數感測單元230置換為複數感測單元430,以及將訊號處理電路250置換為訊號處理電路450。感測單元430之內部結構係類似於第2圖所示之感測單元230,主要差異在於將第一電晶體231、第二電晶體232與第三電晶體233分別置換為第一電晶體431、第二電晶體432與第三電晶體433。第一電晶體431與第二電晶體432可為P型薄膜電晶體或P型場效電晶體。第三電晶體433可為P型薄膜光電晶體或P型場效光電晶體。除了第一電晶體431之第一端係用來接收低電源電壓Vss,感測單元430之內部元件的耦接關係同於感測單元230。Fig. 6 is a view showing a liquid crystal display device with a touch sensing function according to a third embodiment of the present invention. As shown in FIG. 6, the liquid crystal display device 400 is similar to the liquid crystal display device 200 shown in FIG. 2, and the main difference is that the complex sensing unit 230 is replaced with the complex sensing unit 430, and the signal processing circuit 250 is replaced with Signal processing circuit 450. The internal structure of the sensing unit 430 is similar to the sensing unit 230 shown in FIG. 2, and the main difference is that the first transistor 231, the second transistor 232, and the third transistor 233 are replaced with the first transistor 431, respectively. The second transistor 432 and the third transistor 433. The first transistor 431 and the second transistor 432 may be a P-type thin film transistor or a P-type field effect transistor. The third transistor 433 may be a P-type thin film photovoltaic crystal or a P-type field effect photoelectric crystal. The coupling of the internal components of the sensing unit 430 is the same as that of the sensing unit 230 except that the first end of the first transistor 431 is used to receive the low power supply voltage Vss.
訊號處理電路450之內部結構係類似於第2圖所示之訊號處理電路250,主要差異在於將複數開關255置換為複數開關455,以及將複數比較器260置換為複數比較器460。每一開關455電連接於對應讀出線220,用來將對應類比讀出訊號之電壓重置為高電源電壓Vdd。每一比較器460包含正輸入端、負輸入端與輸出端,其中負輸入端用來接收參考電壓Vref,正輸入端電連接於對應讀出線220以接收對應類比讀出訊號,輸出端電連接於多工器270,用來輸出對應類比讀出訊號與參考電壓Vref比較所產生之對應數位讀出訊號。在另一實施例中,比較器460之正輸入端係用來接收參考電壓Vref,而比較器460之負輸入端則電連接於對應讀出線220以接收對應類比讀出訊號。訊號處理電路450之其餘耦接關係與訊號處理運作係同於訊號處理電路250。液晶顯示裝置400運作時之感測閘極訊號SDGn-1、感測閘極訊號SDGn、偏壓訊號Vb_n以及感測電壓Vd的訊號波形,係大致對應於第3圖與第4圖之波形的上下反轉波形,譬如感測閘極訊號SDGn與偏壓訊號Vb_n於時段T1內之波形係為負脈波,而非第3圖與第4圖所示之正脈波。此外,第二儲存電壓Cst2於時段T1內之充電運作,係用以使感測電壓Vd下降至飽和電壓Vsat,而於時段T2內之放電運作則用以使感測電壓Vd從飽和電壓Vsat逐漸上昇。The internal structure of the signal processing circuit 450 is similar to the signal processing circuit 250 shown in FIG. 2, with the main difference being that the complex switch 255 is replaced with a complex switch 455, and the complex comparator 260 is replaced with a complex comparator 460. Each switch 455 is electrically coupled to the corresponding sense line 220 for resetting the voltage of the corresponding analog read signal to a high power supply voltage Vdd. Each comparator 460 includes a positive input terminal, a negative input terminal and an output terminal, wherein the negative input terminal is used to receive the reference voltage Vref, and the positive input terminal is electrically connected to the corresponding readout line 220 to receive the corresponding analog read signal, and the output terminal is electrically The multiplexer 270 is connected to output a corresponding digital read signal generated by comparing the analog read signal with the reference voltage Vref. In another embodiment, the positive input of comparator 460 is used to receive reference voltage Vref, and the negative input of comparator 460 is electrically coupled to corresponding sense line 220 to receive a corresponding analog read signal. The remaining coupling relationship of the signal processing circuit 450 is the same as the signal processing circuit 250. The signal waveforms of the sense gate signal SDGn-1, the sense gate signal SDGn, the bias signal Vb_n, and the sense voltage Vd during operation of the liquid crystal display device 400 are substantially corresponding to the waveforms of FIGS. 3 and 4. The waveform is inverted up and down, for example, the waveform of the sense gate signal SDGn and the bias signal Vb_n in the period T1 is a negative pulse, instead of the positive pulse shown in FIGS. 3 and 4. In addition, the charging operation of the second storage voltage Cst2 in the period T1 is for lowering the sensing voltage Vd to the saturation voltage Vsat, and the discharging operation during the period T2 is for gradually decreasing the sensing voltage Vd from the saturation voltage Vsat. rise.
第7圖為本發明第四實施例之具觸碰感測功能的液晶顯示裝置。如第7圖所示,液晶顯示裝置500係類似於第6圖所示之液晶顯示裝置400,主要差異在於將訊號處理電路450置換為訊號處理電路450。訊號處理電路550包含複數開關555、多工器570、比較器560、記憶單元580、以及訊號定位單元590。每一開關555電連接於對應讀出線220,用來將對應類比讀出訊號之電壓重置為高電源電壓Vdd。多工器570電連接於複數讀出線220,用來將複數類比讀出訊號依序輸出至比較器560。請注意,第6圖所示之多工器270係為數位多工器,而多工器570則為類比多工器。比較器560包含正輸入端、負輸入端與輸出端,其中負輸入端用來接收參考電壓Vref,正輸入端電連接於多工器570以依序接收類比讀出訊號,輸出端電連接於記憶單元580,用來輸出類比讀出訊號與參考電壓Vref比較所產生之數位讀出訊號。在另一實施例中,比較器560之正輸入端係用來接收參考電壓Vref,而比較器560之負輸入端則電連接於多工器570以依序接收類比讀出訊號。記憶單元580電連接於比較器560,用來儲存比較器560依序產生之數位讀出訊號。訊號定位單元590電連接於記憶單元580,用來根據複數數位讀出訊號以產生觸碰位置訊號Spos。除上述訊號處理電路550之內部結構與電路運作,液晶顯示裝置500之其餘結構與電路運作係同於液晶顯示裝置400,不再贅述。Fig. 7 is a view showing a liquid crystal display device with a touch sensing function according to a fourth embodiment of the present invention. As shown in FIG. 7, the liquid crystal display device 500 is similar to the liquid crystal display device 400 shown in FIG. 6, and the main difference is that the signal processing circuit 450 is replaced with the signal processing circuit 450. The signal processing circuit 550 includes a plurality of switches 555, a multiplexer 570, a comparator 560, a memory unit 580, and a signal locating unit 590. Each switch 555 is electrically coupled to the corresponding sense line 220 for resetting the voltage of the corresponding analog read signal to a high power supply voltage Vdd. The multiplexer 570 is electrically coupled to the complex sense line 220 for sequentially outputting the complex analog read signals to the comparator 560. Note that the multiplexer 270 shown in FIG. 6 is a digital multiplexer, and the multiplexer 570 is an analog multiplexer. The comparator 560 includes a positive input terminal, a negative input terminal and an output terminal, wherein the negative input terminal is used to receive the reference voltage Vref, and the positive input terminal is electrically connected to the multiplexer 570 to sequentially receive the analog read signal, and the output terminal is electrically connected to the output terminal. The memory unit 580 is configured to output a digital read signal generated by comparing the analog read signal with the reference voltage Vref. In another embodiment, the positive input of comparator 560 is used to receive reference voltage Vref, and the negative input of comparator 560 is electrically coupled to multiplexer 570 to sequentially receive analog read signals. The memory unit 580 is electrically connected to the comparator 560 for storing the digital read signals sequentially generated by the comparator 560. The signal locating unit 590 is electrically connected to the memory unit 580 for reading the signal according to the plurality of bits to generate the touch position signal Spos. Except for the internal structure and circuit operation of the above-mentioned signal processing circuit 550, the rest of the structure and circuit operation of the liquid crystal display device 500 are the same as those of the liquid crystal display device 400, and will not be described again.
第8圖為本發明觸碰感測方法的流程圖。第8圖所示之流程900係為基於第2圖之液晶顯示裝置200、第5圖之液晶顯示裝置300、第6圖之液晶顯示裝置400、或第7圖之液晶顯示裝置500的觸碰感測方法。流程900所示之觸碰感測方法包含下列步驟:步驟S910:於第一時段內,提供具第一脈波之感測閘極訊號SDGn至感測閘極線DGLn;步驟S920:於第一時段內,提供具與第一脈波重疊的第二脈波之偏壓訊號Vb_n至偏壓線BLn;步驟S930:於第一時段內,感測單元根據感測閘極訊號SDGn之第一脈波與偏壓訊號Vb_n之第二脈波以執行充電程序;步驟S940:於第二時段內,感測單元執行放電程序以產生感測電壓Vd;步驟S950:於第三時段內,提供具第三脈波之感測閘極訊號SDGn-1至感測閘極線DGLn-1,感測單元根據感測電壓Vd與感測閘極訊號SDGn-1之第三脈波以提供類比讀出訊號Sroa_m饋入至讀出線RLm;步驟S960:於第三時段內,訊號處理電路將類比讀出訊號Sroa_m轉換為數位讀出訊號Srod_m;步驟S970:於第四時段內,訊號處理電路根據數位讀出訊號Srod_m產生觸碰位置訊號Spos;以及步驟S980:於第四時段內,訊號處理電路將類比讀出訊號Sroa_m之電壓重置為低電源電壓Vss或高電源電壓Vdd。Figure 8 is a flow chart of the touch sensing method of the present invention. The flow 900 shown in Fig. 8 is a touch of the liquid crystal display device 200 according to Fig. 2, the liquid crystal display device 300 of Fig. 5, the liquid crystal display device 400 of Fig. 6, or the liquid crystal display device 500 of Fig. 7. Sensing method. The touch sensing method shown in the process 900 includes the following steps: Step S910: providing a sensing gate signal SDGn having a first pulse wave to a sensing gate line DGLn in a first period; step S920: first During a period of time, a bias signal Vb_n having a second pulse wave overlapping the first pulse wave is provided to the bias line BLn; and step S930: in the first time period, the sensing unit is configured according to the first pulse of the sensing gate signal SDGn Wave and the second pulse of the bias signal Vb_n to perform the charging process; step S940: in the second time period, the sensing unit performs a discharging process to generate the sensing voltage Vd; and in step S950: providing the first time in the third time period The three-pulse sensing gate signal SDGn-1 to the sensing gate line DGLn-1, the sensing unit provides an analog read signal according to the sensing voltage Vd and the third pulse of the sensing gate signal SDGn-1 Sroa_m is fed to the readout line RLm; step S960: in the third time period, the signal processing circuit converts the analog read signal Sroa_m into a digital read signal Srod_m; step S970: in the fourth time period, the signal processing circuit reads according to the digital The signal Srod_m generates a touch position signal Spos; and step S980 In the fourth period, the analog signal processing circuit Sroa_m the voltage sense signal is reset to the low supply voltage Vss or the high power supply voltage Vdd.
在上述觸碰感測方法的流程900中,放電程序係受控於環境光亮度及/或觸碰事件。在一實施例中,當液晶顯示裝置於第二時段內沒有發生觸碰事件時,感測單元係於第三時段內將大於參考電壓Vref之高電源電壓Vdd輸出為類比讀出訊號Sroa_m,而當液晶顯示裝置於第二時段內發生觸碰事件時,感測單元於第三時段內所提供之類比讀出訊號Sroa_m的電壓係小於參考電壓Vref。在另一實施例中,當液晶顯示裝置於第二時段內沒有發生觸碰事件時,感測單元係於第三時段內將小於參考電壓Vref之低電源電壓Vss輸出為類比讀出訊號Sroa_m,而當液晶顯示裝置於第二時段內發生觸碰事件時,感測單元於第三時段內所提供之類比讀出訊號Sroa_m的電壓係大於參考電壓Vref。In the flow 900 of the touch sensing method described above, the discharge sequence is controlled by ambient light levels and/or touch events. In an embodiment, when the liquid crystal display device does not have a touch event during the second time period, the sensing unit outputs the high power supply voltage Vdd greater than the reference voltage Vref as the analog read signal Sroa_m in the third time period. When the liquid crystal display device generates a touch event in the second time period, the voltage of the analog read signal Sroa_m provided by the sensing unit in the third time period is less than the reference voltage Vref. In another embodiment, when the liquid crystal display device does not have a touch event during the second time period, the sensing unit outputs the low power supply voltage Vss smaller than the reference voltage Vref as the analog read signal Sroa_m in the third time period, When the liquid crystal display device generates a touch event in the second time period, the voltage of the analog read signal Sroa_m provided by the sensing unit in the third time period is greater than the reference voltage Vref.
綜上所述,在本發明液晶顯示裝置之感測單元的運作中,感測電壓係用來控制感測單元之第一電晶體的導通/截止狀態,進而控制將高電源電壓或低電源電壓饋入至讀出線以設定類比讀出訊號之電壓,所以感測電壓之變化量並不受讀出線之線電阻影響,亦即觸碰靈敏度不會因讀出線之線電阻的增加而降低。此外,感測電壓於發生觸碰事件前可藉由放電程序而更接近臨界電壓,所以可提昇觸碰反應速度。另,本發明液晶顯示裝置之感測單元係整合於包含畫素單元之顯示面板內,所以可使其外型更輕薄,並能降低生產成本。In summary, in the operation of the sensing unit of the liquid crystal display device of the present invention, the sensing voltage is used to control the on/off state of the first transistor of the sensing unit, thereby controlling the high power supply voltage or the low power supply voltage. Feeded to the sense line to set the voltage of the analog read signal, so the amount of change in the sense voltage is not affected by the line resistance of the sense line, that is, the touch sensitivity is not increased by the line resistance of the sense line. reduce. In addition, the sensing voltage can be closer to the threshold voltage by the discharge program before the touch event occurs, so the touch reaction speed can be improved. In addition, the sensing unit of the liquid crystal display device of the present invention is integrated in the display panel including the pixel unit, so that the appearance thereof can be made thinner and thinner, and the production cost can be reduced.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何具有本發明所屬技術領域之通常知識者,在不脫離本發明之精神和範圍內,當可作各種更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described above by way of example, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100...觸碰面板裝置100. . . Touch panel device
101...觸碰面板101. . . Touch panel
110、220...讀出線110, 220. . . Readout line
120...感應電容120. . . Inductive capacitor
140...儲存電容140. . . Storage capacitor
150、260、360、460、560...比較器150, 260, 360, 460, 560. . . Comparators
200...液晶顯示裝置200. . . Liquid crystal display device
201...畫素閘極線201. . . Pseudo gate line
202...畫素資料線202. . . Pixel data line
205...畫素單元205. . . Pixel unit
210...感測閘極線210. . . Sense gate line
215...偏壓線215. . . Bias line
230、430...感測單元230,430. . . Sensing unit
231、431...第一電晶體231, 431. . . First transistor
232、432...第二電晶體232, 432. . . Second transistor
233、433...第三電晶體233, 433. . . Third transistor
240...觸碰感測器240. . . Touch sensor
250、350、450、550...訊號處理電路250, 350, 450, 550. . . Signal processing circuit
255、355、455、555...開關255, 355, 455, 555. . . switch
270、370、570...多工器270, 370, 570. . . Multiplexer
280、380、580...記憶單元280, 380, 580. . . Memory unit
290、390、590...訊號定位單元290, 390, 590. . . Signal positioning unit
900...流程900. . . Process
BLn-1、BLn、BLn+1...偏壓線BLn-1, BLn, BLn+1. . . Bias line
CP_j、CP_m...比較器CP_j, CP_m. . . Comparators
Clc...液晶電容Clc. . . Liquid crystal capacitor
Cst1...第一儲存電容Cst1. . . First storage capacitor
Cst2...第二儲存電容Cst2. . . Second storage capacitor
DGLn-1、DGLn、DGLn+1...感測閘極線DGLn-1, DGLn, DGLn+1. . . Sense gate line
DXn_m、DXn+1_m...感測單元DXn_m, DXn+1_m. . . Sensing unit
It...觸碰電流It. . . Touch current
Qpx...畫素電晶體Qpx. . . Pixel crystal
RLj、RLm...讀出線RLj, RLm. . . Readout line
S910~S980...步驟S910~S980. . . step
SDGn-1、SDGn、SDGn+1...感測閘極訊號SDGn-1, SDGn, SDGn+1. . . Sense gate signal
Spos...觸碰位置訊號Spos. . . Touch position signal
Sro...觸碰讀出訊號Sro. . . Touch the read signal
Sroa_j、Sroa_m...類比讀出訊號Sroa_j, Sroa_m. . . Analog reading signal
Srod_j、Srod_m...數位讀出訊號Srod_j, Srod_m. . . Digital read signal
T1、T2、T3、T4、T3'、T4'、T5...時段T1, T2, T3, T4, T3', T4', T5. . . Time slot
Vb_n-1、Vb_n、Vb_n+1...偏壓訊號Vb_n-1, Vb_n, Vb_n+1. . . Bias signal
Vd...感測電壓Vd. . . Sense voltage
Vdd...高電源電壓Vdd. . . High supply voltage
Vh1...第一高電壓Vh1. . . First high voltage
Vh2...第二高電壓Vh2. . . Second high voltage
Vref...參考電壓Vref. . . Reference voltage
Vsat...飽和電壓Vsat. . . Saturation voltage
Vss...低電源電壓Vss. . . Low supply voltage
Vth...臨界電壓Vth. . . Threshold voltage
第1圖為習知觸碰面板裝置的結構示意圖。FIG. 1 is a schematic structural view of a conventional touch panel device.
第2圖為本發明第一實施例之具觸碰感測功能的液晶顯示裝置。Fig. 2 is a view showing a liquid crystal display device with a touch sensing function according to a first embodiment of the present invention.
第3圖為第2圖之液晶顯示裝置於感測週期內無觸碰事件之工作相關訊號波形示意圖,其中橫軸為時間軸。Fig. 3 is a schematic diagram showing the waveforms of the operation-related signals of the liquid crystal display device of Fig. 2 without a touch event during the sensing period, wherein the horizontal axis is the time axis.
第4圖為第2圖之液晶顯示裝置於感測週期內發生觸碰事件之工作相關訊號波形示意圖,其中橫軸為時間軸。Fig. 4 is a schematic diagram showing the waveforms of the operation-related signals of the liquid crystal display device of Fig. 2 in the sensing period, wherein the horizontal axis is the time axis.
第5圖為本發明第二實施例之具觸碰感測功能的液晶顯示裝置。Fig. 5 is a view showing a liquid crystal display device with a touch sensing function according to a second embodiment of the present invention.
第6圖為本發明第三實施例之具觸碰感測功能的液晶顯示裝置。Fig. 6 is a view showing a liquid crystal display device with a touch sensing function according to a third embodiment of the present invention.
第7圖為本發明第四實施例之具觸碰感測功能的液晶顯示裝置。Fig. 7 is a view showing a liquid crystal display device with a touch sensing function according to a fourth embodiment of the present invention.
第8圖為本發明觸碰感測方法的流程圖。Figure 8 is a flow chart of the touch sensing method of the present invention.
200...液晶顯示裝置200. . . Liquid crystal display device
201...畫素閘極線201. . . Pseudo gate line
202...畫素資料線202. . . Pixel data line
205...畫素單元205. . . Pixel unit
210...感測閘極線210. . . Sense gate line
215...偏壓線215. . . Bias line
220...讀出線220. . . Readout line
230...感測單元230. . . Sensing unit
231...第一電晶體231. . . First transistor
232...第二電晶體232. . . Second transistor
233...第三電晶體233. . . Third transistor
240...觸碰感測器240. . . Touch sensor
250...訊號處理電路250. . . Signal processing circuit
255...開關255. . . switch
260...比較器260. . . Comparators
270...多工器270. . . Multiplexer
280...記憶單元280. . . Memory unit
290...訊號定位單元290. . . Signal positioning unit
BLn-1、BLn、BLn+1...偏壓線BLn-1, BLn, BLn+1. . . Bias line
CP_j、CP_m...比較器CP_j, CP_m. . . Comparators
Clc...液晶電容Clc. . . Liquid crystal capacitor
Cst1...第一儲存電容Cst1. . . First storage capacitor
Cst2...第二儲存電容Cst2. . . Second storage capacitor
DGLn-1、DGLn、DGLn+1...感測閘極線DGLn-1, DGLn, DGLn+1. . . Sense gate line
DXn_m、DXn+1_m...感測單元DXn_m, DXn+1_m. . . Sensing unit
It...觸碰電流It. . . Touch current
Qpx...畫素電晶體Qpx. . . Pixel crystal
RLj、RLm...讀出線RLj, RLm. . . Readout line
SDGn-1、SDGn、SDGn+1...感測閘極訊號SDGn-1, SDGn, SDGn+1. . . Sense gate signal
Spos...觸碰位置訊號Spos. . . Touch position signal
Sroa_j、Sroa_m...類比讀出訊號Sroa_j, Sroa_m. . . Analog reading signal
Srod_j、Srod_m...數位讀出訊號Srod_j, Srod_m. . . Digital read signal
Vb_n-1、Vb_n、Vb_n+1...偏壓訊號Vb_n-1, Vb_n, Vb_n+1. . . Bias signal
Vd...感測電壓Vd. . . Sense voltage
Vdd...高電源電壓Vdd. . . High supply voltage
Vref...參考電壓Vref. . . Reference voltage
Vss...低電源電壓Vss. . . Low supply voltage
Claims (19)
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TWI478029B (en) | 2012-05-23 | 2015-03-21 | Hung Ta Liu | Touch control method |
TWI720682B (en) * | 2019-11-08 | 2021-03-01 | 友達光電股份有限公司 | Pixel array substrate |
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US20060227095A1 (en) * | 2005-04-11 | 2006-10-12 | Kim Woo-Chul | Gate drive device for display device and display device having the same |
TW200935285A (en) * | 2008-02-13 | 2009-08-16 | Himax Tech Ltd | Sensor pixel and touch panel thereof |
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US20060227095A1 (en) * | 2005-04-11 | 2006-10-12 | Kim Woo-Chul | Gate drive device for display device and display device having the same |
TW200935285A (en) * | 2008-02-13 | 2009-08-16 | Himax Tech Ltd | Sensor pixel and touch panel thereof |
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TWI657364B (en) * | 2017-07-10 | 2019-04-21 | 南韓商樂金顯示科技股份有限公司 | Display device having optical sensor |
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