TWI414479B - Argon refining method and argon refining device - Google Patents

Argon refining method and argon refining device Download PDF

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TWI414479B
TWI414479B TW099102816A TW99102816A TWI414479B TW I414479 B TWI414479 B TW I414479B TW 099102816 A TW099102816 A TW 099102816A TW 99102816 A TW99102816 A TW 99102816A TW I414479 B TWI414479 B TW I414479B
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gas
adsorption
flow rate
adsorption tower
mixed gas
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TW201031587A (en
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Masanori Miyake
Kouji Matsuura
Toshihiko Sumida
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Sumitomo Seika Chemicals
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N35/00Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
    • G01N35/00584Control arrangements for automatic analysers
    • G01N35/00722Communications; Identification
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N35/00Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
    • G01N35/00584Control arrangements for automatic analysers
    • G01N35/00722Communications; Identification
    • G01N2035/00891Displaying information to the operator
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N35/00Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
    • G01N35/00584Control arrangements for automatic analysers
    • G01N35/0092Scheduling
    • G01N2035/0096Scheduling post analysis management of samples, e.g. marking, removing, storing

Abstract

PURPOSE: A method and a device for purifying argon are provided to obtain argon with high purity and yield by using a PSA method. CONSTITUTION: Mixed gas including argon is inputted to a storage bath(10). The mixed gas is supplied from the storage bath to an absorbing tower(31A,31B,31C). The impurity of the mixed gas is absorbed in an absorbent when the pressure is relatively high inside the absorbing tower. Purified gas with much argon is extracted from the absorbing tower. The impurity is desorbed from the absorbent by decreasing the pressure inside the absorbing tower. The gas is extracted from the absorbing tower. The above processes are repeated in the absorbing tower.

Description

氬氣精製方法及氬氣精製裝置Argon gas refining method and argon gas refining device

本發明是關於利用壓力變動吸附法來精製氬氣的方法及裝置。The present invention relates to a method and apparatus for purifying argon gas by a pressure swing adsorption method.

氬氣經常被用來作為矽拉晶爐、陶瓷燒結爐、鉻鋼脫碳爐等之中的爐內氣氛。被用來作為爐內氣氛氣體的氬氣,會因為不純物的混入而降低純度。關於被用來作為爐內氣氛氣體的氬氣,為了再利用,會有將其回收而以壓力變動吸附法(PSA法)來精製的情況。關於使用PSA法的氬氣的精製技術,揭露於例如以下的專利文獻1~4。Argon is often used as an atmosphere in a furnace in a crucible crystal furnace, a ceramic sintering furnace, a chrome steel decarburization furnace, and the like. The argon gas used as the atmosphere gas in the furnace reduces the purity due to the incorporation of impurities. The argon gas used as the atmosphere gas in the furnace may be recovered and recovered by a pressure fluctuation adsorption method (PSA method) for reuse. The refining technique of the argon gas using the PSA method is disclosed in, for example, the following Patent Documents 1 to 4.

【先行技術文獻】[First technical literature]

【專利文獻1】特開平4-69563號公報[Patent Document 1] JP-A-4-69563

【專利文獻2】特開平4-17039號公報[Patent Document 2] Japanese Patent Publication No. 4-17039

【專利文獻3】特開平6-166507號公報[Patent Document 3] Japanese Patent Publication No. 6-166507

【專利文獻4】特開平9-201530號公報[Patent Document 4] Japanese Patent Publication No. 9-201530

從矽拉晶爐、陶瓷燒結爐、鉻鋼脫碳爐等所排出之以氬氣為主成分的已使用的氣氛氣體,常常伴隨著排出流量、不純物組成等的變動,亦有急遽變動的情況。因此,為了將從爐中排出的此排放氣體作連續性地精製處理,有必要構築可以因應此排放氣體的流量變動、組成變動等的處理系統。然而,在用以實行PSA法的PSA裝置中,是難以因應供應至此裝置的原料氣體的必然的流量變動(即負荷變動)。另外,PSA不擅於因應原料氣體的組成變動。The used atmospheric gas containing argon as a main component discharged from a krypton crystal furnace, a ceramic sintering furnace, a chrome steel decarburization furnace, etc., is often accompanied by fluctuations in discharge flow rate, impurity composition, and the like, and there is also a rapid change. . Therefore, in order to continuously refine the exhaust gas discharged from the furnace, it is necessary to construct a processing system that can respond to fluctuations in the flow rate of the exhaust gas, composition fluctuations, and the like. However, in the PSA apparatus for carrying out the PSA method, it is difficult to respond to the inevitable flow rate variation (i.e., load fluctuation) of the material gas supplied to the apparatus. In addition, PSA is not good at responding to changes in the composition of raw material gases.

另外,從各種爐具所排出之以氬氣為主成分的已使用的氣氛氣體,其氬氣濃度是相對較高(氬氣濃度例如為95vol%以上)。在習知技術中,針對這樣高濃度的氬氣,是難以使用PSA法來作進一步的高濃度化並達成高回收率。Further, the used atmospheric gas containing argon as a main component discharged from various furnaces has a relatively high argon gas concentration (for example, an argon gas concentration of 95 vol% or more). In the prior art, it is difficult to further increase the concentration of argon gas in such a high concentration by using the PSA method and achieve high recovery.

有鑑於此,本發明的目的是提供一種氬氣精製方法及氬氣精製裝置,其適用於利用PSA法來獲得高產率的高純度氬氣。In view of the above, an object of the present invention is to provide an argon gas refining method and an argon gas refining apparatus which are suitable for obtaining a high-purity high-purity argon gas by the PSA method.

根據本發明的第一特徵,是提供一種氬氣精製方法。在本方法中,是將含氬氣的混合氣體收進貯留槽;另外,從貯留槽向著已充填吸附劑的吸附塔供應混合氣體。然後,在吸附塔中重複進行含吸附(adsorption)步驟及脫附(desorption)步驟的循環。在吸附步驟中,在吸附塔內為相對高壓的狀態下,將混合氣體導入此吸附塔,而使吸附劑吸附此混合氣體中的不純物,且將氬氣富化的精製氣體從此吸附塔導出。在脫附步驟中,使吸附塔內降壓而從吸附劑脫附不純物,且從此吸附塔導出氣體。另外,脫附步驟包含在此脫附步驟的開始到途中之中從吸附塔導出第一氣體的第一脫附步驟、與在第一脫附步驟之後從吸附塔導出第二氣體的第二脫附步驟,並將第一氣體導入貯留槽。在本方法中,可以使用單一個吸附塔,也可使用複數個吸附塔。According to a first feature of the present invention, there is provided an argon gas refining method. In the method, the mixed gas containing argon gas is charged into the storage tank; and the mixed gas is supplied from the storage tank to the adsorption tower which has been filled with the adsorbent. Then, the cycle including the adsorption step and the desorption step is repeated in the adsorption column. In the adsorption step, the mixed gas is introduced into the adsorption tower in a relatively high pressure state in the adsorption tower, so that the adsorbent adsorbs the impurities in the mixed gas, and the argon-rich purified gas is led out from the adsorption tower. In the desorption step, the inside of the adsorption column is depressurized to desorb the impurities from the adsorbent, and the gas is withdrawn from the adsorption column. Further, the desorption step includes a first desorption step of deriving the first gas from the adsorption tower during the start of the desorption step, and a second desorption of the second gas from the adsorption tower after the first desorption step A step is added and the first gas is introduced into the storage tank. In the present method, a single adsorption column may be used, or a plurality of adsorption columns may be used.

在本方法中,是在吸附塔中實行包含上述的吸附步驟及脫附步驟的壓力變動吸附法(PSA法),藉此謀求混合氣體中的氬氣的富化。關於混合氣體,將其暫時收進貯留槽之後,則從此貯留槽向著用以實行PSA法的吸附塔供應混合氣體。即使作為收入貯留槽而成的原料氣體的混合氣體伴隨著流量、組成等變動的情況,一旦將此混合氣體收進貯留槽並受到貯留及混合,藉此從此貯留槽導出的混合氣體中的流量變動、組成變動等會受到抑制。因此,藉由本方法,即使利用PSA法來富化氬氣,仍容易因應原料氣體的流量變動、組成變動等。In the present method, a pressure swing adsorption method (PSA method) including the above-described adsorption step and desorption step is carried out in an adsorption column, thereby enriching argon gas in the mixed gas. Regarding the mixed gas, after temporarily charging it into the storage tank, the mixed gas is supplied from the storage tank toward the adsorption tower for carrying out the PSA method. Even if the mixed gas of the raw material gas which is the income storage tank is changed in flow rate, composition, etc., the mixed gas is collected in the storage tank and stored and mixed, whereby the flow rate in the mixed gas derived from the storage tank Changes, composition changes, etc. will be suppressed. Therefore, according to this method, even if the argon gas is enriched by the PSA method, it is easy to respond to fluctuations in the flow rate of the material gas, composition fluctuation, and the like.

除此之外,藉由本發明,容易達成富化氬氣的高產率。因為在本方法中,在上述的脫附步驟中從吸附塔持續導出的氣體(廢氣(off gas))之中,使氬氣濃度相對較高的廢氣回到貯留槽,將此廢氣供作使用PSA法的再次的氬氣的富化。從處於脫附步驟的吸附塔導出的廢氣的不純物含有率,是從脫附步驟開始之後,有漸次上升的傾向,而在本方法中,此廢氣的不純物含有率夠低的期間,可進行將廢氣(第一脫附氣體)導入貯留槽的第一脫附步驟,而在廢氣的不純物含有率在一定以上的期間,則可進行將廢氣(第二脫附氣體)排出系統外的第二脫附步驟。In addition to this, with the present invention, it is easy to achieve a high yield of enriched argon gas. In the method, in the gas (off gas) continuously derived from the adsorption tower in the desorption step described above, the exhaust gas having a relatively high argon gas concentration is returned to the storage tank, and the exhaust gas is used for use. The enrichment of argon again by the PSA method. The impurity content rate of the exhaust gas derived from the adsorption tower in the desorption step tends to gradually increase from the start of the desorption step, and in the present method, the period of the impurity content of the exhaust gas is sufficiently low. The exhaust gas (first desorbed gas) is introduced into the first desorption step of the storage tank, and when the impurity content of the exhaust gas is at least a certain period, the second degassing of the exhaust gas (second desorbed gas) outside the system can be performed. Attached steps.

如上所述,本發明的第一特徵相關的氬氣精製方法,適用於利用PSA法來以高產率獲得高純度氬氣。As described above, the argon gas refining method related to the first feature of the present invention is suitable for obtaining high-purity argon gas in a high yield by the PSA method.

根據本發明的第二特徵,是提供一種氬氣精製方法。在此方法中,是將含氬氣的混合氣體收進貯留槽,另外,從貯留槽向著已充填吸附劑的複數個吸附塔供應混合氣體。然後,在吸附塔中,各自重複進行含下列吸附步驟、減壓步驟、脫附步驟、清潔步驟及升壓步驟的循環。在吸附步驟中,在吸附塔內為相對高壓的狀態下,將混合氣體導入此吸附塔,而使吸附劑吸附此混合氣體中的不純物,且將氬氣富化的精製氣體從此吸附塔導出。在減壓步驟中,將吸附塔內降壓而從此吸附塔將氣體導出。在脫附步驟中,使吸附塔內降壓而從吸附劑脫附不純物,且從此吸附塔導出氣體。在清潔步驟中,將清潔氣體導入吸附塔、且從此吸附塔導出氣體。清潔步驟的清潔氣體是從處於減壓步驟的吸附塔導出的氣體。清潔步驟包含在此清潔步驟的開始到途中之中從吸附塔導出第一氣體的第一清潔步驟、與在第一清潔步驟之後從此吸附塔導出第二氣體的第二清潔步驟,並將第二氣體導入貯留槽。在升壓步驟中,是使吸附塔內的壓力上升。According to a second feature of the present invention, there is provided an argon gas refining method. In this method, a mixed gas containing argon gas is charged into a storage tank, and a mixed gas is supplied from a storage tank to a plurality of adsorption towers which have been filled with an adsorbent. Then, in the adsorption tower, a cycle including the following adsorption step, depressurization step, desorption step, cleaning step, and pressure increasing step is repeated. In the adsorption step, the mixed gas is introduced into the adsorption tower in a relatively high pressure state in the adsorption tower, so that the adsorbent adsorbs the impurities in the mixed gas, and the argon-rich purified gas is led out from the adsorption tower. In the depressurization step, the inside of the adsorption column is depressurized and the gas is led out from the adsorption column. In the desorption step, the inside of the adsorption column is depressurized to desorb the impurities from the adsorbent, and the gas is withdrawn from the adsorption column. In the cleaning step, the cleaning gas is introduced into the adsorption tower, and the gas is withdrawn from the adsorption tower. The cleaning gas for the cleaning step is the gas that is derived from the adsorption column in the depressurization step. The cleaning step includes a first cleaning step of deriving a first gas from the adsorption tower during the start of the cleaning step, a second cleaning step of deriving a second gas from the adsorption tower after the first cleaning step, and a second cleaning step The gas is introduced into the storage tank. In the step of boosting, the pressure in the adsorption tower is raised.

在本方法中,是在各吸附塔中實行包含上述的吸附步驟、減壓步驟、脫附步驟、清潔步驟及升壓步驟的壓力變動吸附法(PSA法),藉此謀求混合氣體中的氬的富化。關於混合氣體,將其暫時收進貯留槽之後,則從此貯留槽向著用以實行PSA法的吸附塔供應混合氣體。即使作為收入貯留槽而成的原料氣體的混合氣體伴隨著流量、組成等變動的情況,一旦將此混合氣體收進貯留槽並受到貯留及混合,藉此從此貯留槽導出的混合氣體中的流量變動、組成變動等會受到抑制。因此,藉由本方法,即使利用PSA法來富化氬氣,仍容易因應原料氣體的流量變動、組成變動等。In the present method, a pressure swing adsorption method (PSA method) including the adsorption step, the pressure reduction step, the desorption step, the cleaning step, and the pressure increasing step described above is carried out in each adsorption column to thereby obtain argon in the mixed gas. Enrichment. Regarding the mixed gas, after temporarily charging it into the storage tank, the mixed gas is supplied from the storage tank toward the adsorption tower for carrying out the PSA method. Even if the mixed gas of the raw material gas which is the income storage tank is changed in flow rate, composition, etc., the mixed gas is collected in the storage tank and stored and mixed, whereby the flow rate in the mixed gas derived from the storage tank Changes, composition changes, etc. will be suppressed. Therefore, according to this method, even if the argon gas is enriched by the PSA method, it is easy to respond to fluctuations in the flow rate of the material gas, composition fluctuation, and the like.

除此之外,藉由本發明,容易達成富化氬氣的高產率。因為在本方法中,在上述的清潔步驟中從吸附塔持續導出的氣體(沖洗用氣體(purge gas))之中,將氬氣濃度相對較高的沖洗用氣體導入貯留槽,將此沖洗用氣體供作使用PSA法的氬氣的富化。從處於清潔步驟的吸附塔導出的沖洗用氣體的不純物含有率,是從清潔步驟開始之後,有漸次降低的傾向,而在本方法中,可進行將沖洗用氣體(第一排放氣體)排出系統外的第一清潔步驟,直到沖洗用氣體的不純物含有率夠低為止,而在沖洗用氣體的不純物含有率夠低之後,則可進行將沖洗用氣體(第二排放氣體)導入貯留槽的第二清潔步驟。In addition to this, with the present invention, it is easy to achieve a high yield of enriched argon gas. In the present method, among the gas (purge gas) continuously derived from the adsorption tower in the above-described cleaning step, a flushing gas having a relatively high argon gas concentration is introduced into the storage tank, and the flushing is performed. The gas is used for enrichment of argon using the PSA method. The impurity content rate of the flushing gas derived from the adsorption tower in the cleaning step tends to gradually decrease from the start of the cleaning step, and in the present method, the flushing gas (first exhaust gas) can be discharged from the system. In the first cleaning step, the impurity content of the rinsing gas is sufficiently low, and after the impurity content of the rinsing gas is sufficiently low, the rinsing gas (second exhaust gas) can be introduced into the storage tank. Two cleaning steps.

如上所述,本發明的第二特徵相關的氬氣精製方法,適用於利用PSA法來以高產率獲得高純度氬氣。As described above, the argon gas refining method relating to the second feature of the present invention is suitable for obtaining high-purity argon gas in a high yield by the PSA method.

本發明的第二特徵中,較好為脫附步驟包含在此脫附步驟的開始到途中之中從吸附塔導出第一脫附氣體的第一脫附步驟、與在第一脫附步驟之後從此吸附塔導出第二脫附氣體的第二脫附步驟,並將該第一脫附氣體導入上述貯留槽。這樣的操作對以高產率獲得高純度氬氣有用。因為在本方法中,在上述的脫附步驟中從吸附塔持續導出的氣體(廢氣)之中,使氬氣濃度相對較高的廢氣回到貯留槽,將此廢氣供作使用PSA法的再次的氬氣的富化。從處於脫附步驟的吸附塔導出的廢氣的不純物含有率,是從脫附步驟開始之後,有漸次上升的傾向,而在本方法中,此廢氣的不純物含有率夠低的期間,可進行將廢氣(第一脫附氣體)導入貯留槽的第一脫附步驟,而在廢氣的不純物含有率在一定以上的期間,則可進行將廢氣(第二脫附氣體)排出系統外的第二脫附步驟。In a second feature of the invention, preferably the desorption step comprises a first desorption step of deriving the first desorbed gas from the adsorption column during the beginning of the desorption step, and after the first desorption step A second desorption step of desorbing the second desorbed gas is derived from the adsorption column, and the first desorbed gas is introduced into the storage tank. Such an operation is useful for obtaining high purity argon gas in high yield. In the method, in the gas (exhaust gas) continuously derived from the adsorption tower in the desorption step described above, the exhaust gas having a relatively high argon gas concentration is returned to the storage tank, and the exhaust gas is supplied as a PSA method again. Enrichment of argon. The impurity content rate of the exhaust gas derived from the adsorption tower in the desorption step tends to gradually increase from the start of the desorption step, and in the present method, the period of the impurity content of the exhaust gas is sufficiently low. The exhaust gas (first desorbed gas) is introduced into the first desorption step of the storage tank, and when the impurity content of the exhaust gas is at least a certain period, the second degassing of the exhaust gas (second desorbed gas) outside the system can be performed. Attached steps.

較佳的情況是,減壓步驟包含在此減壓步驟的開始到途中之中從吸附塔導出第一減壓氣體的第一減壓步驟、與在該第一減壓步驟之後從此吸附塔導出第二減壓氣體的第二減壓步驟,並將第一減壓氣體作為清潔氣體而導入處於清潔步驟的吸附塔、將第二減壓氣體導入處於升壓步驟的吸附塔。從處於減壓步驟的吸附塔導出的氣體的氬氣濃度相對較高時,若使用這樣的結構,可以利用從處於減壓步驟的吸附塔導出的氣體而在其他的吸附塔有效率地進行清潔步驟及升壓步驟。也就是若使用這樣的結構,可以統合性地利用分別於複數個吸附塔所進行的步驟,而可以有效率地進行用以富化氬氣的PSA法。Preferably, the depressurization step comprises a first depressurization step of deriving the first decompressed gas from the adsorption column during the start of the depressurization step, and deriving from the adsorption column after the first decompression step The second depressurization step of the second decompressed gas, the first decompressed gas is introduced as a cleaning gas into the adsorption column in the cleaning step, and the second decompressed gas is introduced into the adsorption column in the step of increasing pressure. When the argon gas concentration of the gas derived from the adsorption tower in the depressurization step is relatively high, if such a structure is used, the gas derived from the adsorption tower in the depressurization step can be efficiently cleaned in other adsorption towers. Step and boost step. That is, if such a structure is used, the steps performed in a plurality of adsorption columns can be utilized in an integrated manner, and the PSA method for enriching argon gas can be efficiently performed.

較佳的情況是,以處於脫附步驟的吸附塔的內部的最低壓力為0%、且以處於吸附步驟的吸附塔的內部的最高壓力為100%的情況,第一減壓步驟的終了時的吸附塔的內部的第一中間壓力為35~80%的範圍,且在第二減壓步驟的終了時的吸附塔的內部的第二中間壓力小於第一中間壓力的限制中,第二中間壓力為15~50%的範圍。這樣的構成對有效率地進行清潔步驟及升壓步驟有用。Preferably, the lowest pressure in the interior of the adsorption column in the desorption step is 0%, and the maximum pressure in the interior of the adsorption column in the adsorption step is 100%, at the end of the first depressurization step. The first intermediate pressure inside the adsorption tower is in the range of 35 to 80%, and the second intermediate pressure inside the adsorption tower at the end of the second decompression step is less than the limitation of the first intermediate pressure, the second intermediate The pressure is in the range of 15 to 50%. Such a configuration is useful for efficiently performing the cleaning step and the step of boosting.

較佳的情況是,升壓步驟包含將從處於第二減壓步驟的吸附塔導出的第六氣體導入升壓對象的吸附塔的第一升壓步驟、與在第一升壓步驟之後將精製氣體導入此吸附塔的第二升壓步驟。這樣的構成,由於有效率地在各吸附塔進行升壓步驟及其後的吸附步驟,故較佳。Preferably, the step of boosting includes introducing a sixth gas derived from the adsorption column in the second depressurization step into the adsorption step of the adsorption target, and refining after the first pressure increase step. A second step of boosting the gas into the adsorption column. Such a configuration is preferable because the adsorption step and the subsequent adsorption step are efficiently performed in each adsorption column.

本發明的第一及第二特徵中,較佳的情況是處於脫附步驟的吸附塔的內部的最低壓力為大氣壓以上。在這樣的構成中,在吸附塔進行脫附步驟時,沒有一定要使用真空泵等積極性的減壓裝置。另外,沒有一定要使用真空泵等積極性的減壓裝置的這類構成,由於從用於實行PSA法的吸附塔或PSA裝置,是可因應來自貯留槽的混合氣體的流量變動(也就是對於裝置的負荷變動),故較佳。In the first and second features of the present invention, it is preferred that the lowest pressure inside the adsorption tower in the desorption step is atmospheric pressure or higher. In such a configuration, when the adsorption tower performs the desorption step, it is not necessary to use an active pressure reduction device such as a vacuum pump. In addition, there is no need to use such a configuration of a positive pressure reducing device such as a vacuum pump, since the flow rate of the mixed gas from the storage tank can be varied from the adsorption tower or the PSA device for performing the PSA method (that is, for the device) It is better because the load changes).

較佳的情況是,從貯留槽向著吸附塔所供應的混合氣體的流量,是在吸附塔開始吸附步驟之時更新。這樣的構成,由於可減輕對於從用於實行PSA法的吸附塔或PSA裝置的負荷,故較佳。Preferably, the flow rate of the mixed gas supplied from the storage tank toward the adsorption tower is updated at the time when the adsorption tower starts the adsorption step. Such a configuration is preferable because it can reduce the load on the adsorption tower or the PSA apparatus for performing the PSA method.

在第一較佳實施形態中,關於貯留槽中的貯留量,設定上側設定量及小於此上側設定量的下側設定量。因此,在混合氣體的供應流量更新時:貯留槽內的混合氣體的貯留量為上側設定量以上的情況,增加混合氣體供應流量;貯留槽內的混合氣體的貯留量為低於上側設定量且高於下側設定量的情況,不變更混合氣體供應流量;貯留槽內的混合氣體的貯留量為該下側設定量以下的情況,減低混合氣體供應流量。這樣的構成,由於貯留槽可因應作為收入貯留槽而成的原料氣體的混合氣體的流量變動,並減輕對於從用於實行PSA法的貯留槽或PSA裝置的負荷變動而謀求負荷的穩定化,故較佳。In the first preferred embodiment, the upper side setting amount and the lower side setting amount smaller than the upper side setting amount are set in relation to the storage amount in the storage tank. Therefore, when the supply flow rate of the mixed gas is updated: when the storage amount of the mixed gas in the storage tank is equal to or higher than the upper set amount, the mixed gas supply flow rate is increased; and the storage amount of the mixed gas in the storage tank is lower than the upper set amount and When the amount is higher than the lower setting amount, the mixed gas supply flow rate is not changed; if the storage amount of the mixed gas in the storage tank is equal to or less than the lower side setting amount, the mixed gas supply flow rate is reduced. In such a configuration, the flow rate of the mixed gas of the raw material gas which is the storage tank is changed, and the load is stabilized by the load fluctuation from the storage tank or the PSA apparatus for performing the PSA method. Therefore, it is better.

在第二較佳實施形態中,關於貯留槽中的貯留量,設定上側設定量及小於此上側設定量的下側設定量,且在混合氣體供應流量的更新時之前,取得被收進該貯留槽的該混合氣體的流量(例如為既定期間內的平均流量)來作為基準流量。因此,在混合氣體的供應流量更新時:貯留槽內的混合氣體的貯留量為上側設定量以上的情況,以大於基準流量的流量為混合氣體供應流量;貯留槽內的該混合氣體的貯留量為低於上側設定量且高於下側設定量的情況,以基準流量為混合氣體供應流量;貯留槽內的混合氣體的貯留量為下側設定量以下的情況,以小於基準流量的流量為混合氣體供應流量。這樣的構成,由於貯留槽可因應作為收入貯留槽而成的原料氣體的混合氣體的流量變動,並減輕對於從用於實行PSA法的貯留槽或PSA裝置的負荷變動而謀求負荷的穩定化,故較佳。In the second preferred embodiment, the upper side setting amount and the lower side setting amount smaller than the upper side setting amount are set in the storage amount in the storage tank, and the storage is received before the mixed gas supply flow rate is updated. The flow rate of the mixed gas in the tank (for example, the average flow rate in a predetermined period) is used as the reference flow rate. Therefore, when the supply flow rate of the mixed gas is updated: the storage amount of the mixed gas in the storage tank is equal to or greater than the upper set amount, and the flow rate larger than the reference flow rate is the mixed gas supply flow rate; and the storage amount of the mixed gas in the storage tank When the amount is lower than the upper setting amount and higher than the lower side setting amount, the reference flow rate is the mixed gas supply flow rate; the storage amount of the mixed gas in the storage tank is equal to or less than the lower side setting amount, and the flow rate smaller than the reference flow rate is Mixed gas supply flow. In such a configuration, the flow rate of the mixed gas of the raw material gas which is the storage tank is changed, and the load is stabilized by the load fluctuation from the storage tank or the PSA apparatus for performing the PSA method. Therefore, it is better.

較佳的情況是,在將該混合氣體供應至吸附塔之前,從貯留槽對混合氣體施以前處理,前處理的目的是除去或改變此混合氣體所含的不純物的至少一部分。這樣的構成,由於可獲得高純度氬氣,故較佳。另外,這樣的構成,由於可穩定地進行混合氣體所含的不純物除去或改變,而有效率地進行,故亦較佳。其原因在於對於來自流量變動緩和的貯留槽的混合氣體施以前處理的本構成中,容易穩定對於前處理的負荷。Preferably, the mixed gas is pretreated from the storage tank before the mixed gas is supplied to the adsorption tower, and the purpose of the pretreatment is to remove or change at least a part of the impurities contained in the mixed gas. Such a configuration is preferable because high-purity argon gas can be obtained. Further, such a configuration is preferable because the impurities contained in the mixed gas can be stably removed or changed. The reason for this is that in the present configuration in which the mixed gas from the storage tank in which the flow rate fluctuation is relaxed is applied, it is easy to stabilize the load for the pretreatment.

較佳的情況是,前處理是分成複數段來進行。除去或改變混合氣體所含的不純物的至少一部分之時欲對此混合氣體所施以的前處理包含發熱反應的情況,將前處理分成複數段來進行的構成,由於在此前處理中,可以防止過度的溫度上升並將反應溫度控制於適當範圍內,故較佳。Preferably, the pre-processing is performed by dividing into a plurality of segments. When the at least one portion of the impurities contained in the mixed gas is removed or changed, the pretreatment to be applied to the mixed gas is subjected to a heat generation reaction, and the pretreatment is divided into a plurality of stages, which can be prevented in the prior treatment. It is preferred that the excessive temperature rises and the reaction temperature is controlled within an appropriate range.

在混合氣體除了含氬氣之外、還至少含一氧化碳及氫的情況中,較佳的情況是前處理包含使一氧化碳與氧反應而產生二氧化碳的第一處理、與在第一處理之後所進行之使氫與氧反應而產生水的第二處理。這樣的構成,由於在混合氣體除了含氬氣之外、還含一氧化碳及氫的情況中,謀求此一氧化碳及氫的除去或低濃度化,故較佳。In the case where the mixed gas contains at least carbon monoxide and hydrogen in addition to the argon-containing gas, it is preferred that the pretreatment comprises a first treatment for reacting carbon monoxide with oxygen to generate carbon dioxide, and after the first treatment. A second treatment that produces hydrogen by reacting with oxygen. In such a configuration, in the case where the mixed gas contains carbon monoxide and hydrogen in addition to argon gas, it is preferable to remove or lower the concentration of the carbon monoxide and hydrogen.

另外,前處理亦可更包含在第二處理之後所進行之使氫與氧反應而產生水的第三處理。這樣的構成,由於可防止在使氫與氧反應而產生水的處理中(在此處理中,氫與水是藉由發熱反應而產生水)的過度的溫度上升,並將反應溫度控制於適當範圍內,故較佳。另外,這樣的構成,由於謀求氫的除去或進一步地低濃度化,故較佳。再加上在這樣的構成中,可以最終地調整供應至吸附塔的混合氣體的氫濃度。因此,這樣的構成,由於可將精製氣體(高純度氬氣)調製成含有既定濃度的氫,故較佳。In addition, the pretreatment may further include a third treatment performed by reacting hydrogen with oxygen to generate water after the second treatment. Such a configuration prevents an excessive temperature rise in the treatment for generating water by reacting hydrogen with oxygen (in this treatment, hydrogen and water are generated by the exothermic reaction), and the reaction temperature is controlled appropriately. Within the scope, it is preferred. Further, such a configuration is preferable because it removes hydrogen or further reduces the concentration. Further, in such a configuration, the hydrogen concentration of the mixed gas supplied to the adsorption tower can be finally adjusted. Therefore, such a configuration is preferable because a purified gas (high-purity argon gas) can be prepared to contain hydrogen having a predetermined concentration.

根據本發明的第三特徵,是提供一種氬氣精製裝置。本裝置是包含:一吸附塔,其具有一第一氣體通過口與一第二氣體通過口,在此第一及第二氣體通過口之間充填有吸附劑;一貯留槽,用以在將含氬氣的混合氣體供應至吸附塔之前,貯留此混合氣體;一第一線,連結貯留槽及吸附塔之間,而得以將混合氣體從貯留槽供應至吸附塔的第一氣體通過口側;一第二線,其連接吸附塔的第一氣體通過口側且具有一排氣端;以及一第三線(回收線),連結第二線及貯留槽。若藉由具備這樣結構的本裝置,可以適當地實行本發明的第一特徵相關的上述氬氣的精製方法。According to a third feature of the present invention, an argon gas refining device is provided. The apparatus comprises: an adsorption tower having a first gas passage opening and a second gas passage opening, wherein the first and second gas passage openings are filled with an adsorbent; and a storage tank is used for Before the argon-containing mixed gas is supplied to the adsorption tower, the mixed gas is stored; a first line is connected between the storage tank and the adsorption tower, and the mixed gas is supplied from the storage tank to the first gas passage side of the adsorption tower a second line connecting the first gas passage port side of the adsorption tower and having an exhaust end; and a third line (recovery line) connecting the second line and the storage tank. According to the present apparatus having such a configuration, the method for purifying the argon gas according to the first aspect of the present invention can be suitably carried out.

根據本發明的第四特徵,是提供一種氬氣精製裝置。本裝置是包含:複數個吸附塔,其具有一第一氣體通過口與一第二氣體通過口,在此第一及第二氣體通過口之間充填有吸附劑;一貯留槽,用以在將含氬氣的混合氣體供應至吸附塔之前,貯留混合氣體;一第一線,連結貯留槽及各吸附塔之間,而得以將混合氣體從貯留槽供應至各吸附塔的第一氣體通過口側;一第二線,其包含具有一排氣端的主幹路、及設置於每個吸附塔而連接各吸附塔的第一氣體通過口側的複數個分支路;一第三線,其包含主幹路、及設置於每個吸附塔而連接各吸附塔的第二氣體通過口側的複數個分支路;以及一第四線,連結第二線及貯留槽。若藉由具備這樣結構的本裝置,可以適當地實行本發明的第二特徵相關的上述氬氣的精製方法。According to a fourth feature of the present invention, an argon gas refining device is provided. The apparatus comprises: a plurality of adsorption towers having a first gas passage opening and a second gas passage opening, wherein the first and second gas passage openings are filled with an adsorbent; and a storage tank is used for Before the argon-containing mixed gas is supplied to the adsorption tower, the mixed gas is stored; a first line is connected between the storage tank and each of the adsorption towers, and the first gas that supplies the mixed gas from the storage tank to each adsorption tower is passed a second line comprising a main road having an exhaust end, and a plurality of branch paths disposed on each of the adsorption towers to connect the first gas passages of the adsorption towers; and a third line including the trunk And a plurality of branch paths that are disposed on each of the adsorption towers and connect the second gas of each adsorption tower to the adsorption side; and a fourth line that connects the second line and the storage tank. According to the present apparatus having such a configuration, the method for purifying the argon gas according to the second feature of the present invention can be suitably carried out.

本發明的第三及第四特徵相關的氬氣精製裝置,較佳的情況是更包含用以檢測貯留槽中的貯留量的裝置、與用以控制從該貯留槽向著吸附塔供應的混合氣體的流量的裝置。這樣的構成,由於可實行上述的第一較佳實施形態相關的混合氣體供應流量的更新,故較佳。The argon gas refining device according to the third and fourth features of the present invention preferably further includes means for detecting the storage amount in the storage tank, and a mixed gas for controlling supply from the storage tank toward the adsorption tower. The device of the flow. Such a configuration is preferable because the flow rate of the mixed gas supply according to the first preferred embodiment described above can be updated.

本發明的第三及第四特徵相關的氬氣精製裝置,較佳的情況是更包含用以檢測貯留槽中的貯留量的裝置、用以控制從該貯留槽向著吸附塔供應的混合氣體的流量的裝置、與用以檢測供應至貯留槽的混合氣體的流量的裝置。這樣的構成,由於可實行上述的第二較佳實施形態相關的混合氣體供應流量的更新,故較佳。The argon gas purifying apparatus according to the third and fourth features of the present invention preferably further includes means for detecting the storage amount in the storage tank, and controlling the mixed gas supplied from the storage tank toward the adsorption tower. A device for flow, and a device for detecting a flow rate of a mixed gas supplied to the storage tank. Such a configuration is preferable because the flow rate of the mixed gas supply according to the second preferred embodiment described above can be updated.

較佳的情況是,用以實行一前處理的前處理系統是設於該第一線,前處理的目的是除去或改變此混合氣體所含的不純物的至少一部分。這樣的構成,由於可獲得高純度氬氣,故較佳。另外,這樣的構成,由於可穩定地進行混合氣體所含的不純物除去或改變,而有效率地進行,故亦較佳。其原因在於對於來自流量變動緩和的貯留槽的混合氣體施以前處理的本構成中,容易穩定對於前處理的負荷。Preferably, a pretreatment system for performing a pretreatment is provided on the first line, and the purpose of the pretreatment is to remove or change at least a portion of the impurities contained in the mixed gas. Such a configuration is preferable because high-purity argon gas can be obtained. Further, such a configuration is preferable because the impurities contained in the mixed gas can be stably removed or changed. The reason for this is that in the present configuration in which the mixed gas from the storage tank in which the flow rate fluctuation is relaxed is applied, it is easy to stabilize the load for the pretreatment.

較佳的情況是,前處理系統包含用以將前處理分成複數段來進行的複數個處理槽。除去或改變混合氣體所含的不純物的至少一部分之時欲對此混合氣體所施以的前處理包含發熱反應的情況,包含用以將前處理分成複數段來進行的複數個前處理系統的構成,由於在此前處理中,可以防止過度的溫度上升並將反應溫度控制於適當範圍內,故較佳。Preferably, the pre-processing system includes a plurality of processing slots for dividing the pre-processing into a plurality of segments. When the at least one portion of the impurities contained in the mixed gas is removed or changed, the pretreatment to be applied to the mixed gas includes a pyrolysis reaction, and includes a plurality of pretreatment systems for dividing the pretreatment into a plurality of stages. It is preferable since the excessive temperature rise can be prevented and the reaction temperature is controlled within an appropriate range in the previous treatment.

在混合氣體除了含氬氣之外、還至少含一氧化碳及氫的情況中,較佳的情況是前處理系統包含一第一處理槽與一第二處理槽,第一處理槽是用以實行使一氧化碳與氧反應而產生二氧化碳的第一處理,第二處理槽是用以在第一處理之後實行使氫與氧反應而產生水的第二處理。這樣的構成,由於在混合氣體除了含氬氣之外、還含一氧化碳及氫的情況中,謀求此一氧化碳及氫的除去或低濃度化,故較佳。In the case where the mixed gas contains at least carbon monoxide and hydrogen in addition to the argon-containing gas, it is preferred that the pretreatment system includes a first treatment tank and a second treatment tank, and the first treatment tank is used to carry out A first treatment in which carbon monoxide reacts with oxygen to produce carbon dioxide, and a second treatment tank is used to perform a second treatment of reacting hydrogen with oxygen to produce water after the first treatment. In such a configuration, in the case where the mixed gas contains carbon monoxide and hydrogen in addition to argon gas, it is preferable to remove or lower the concentration of the carbon monoxide and hydrogen.

另外,前處理系統亦可更包含一第三處理槽,其用已施行在第二處理之後所進行之使氫與氧反應而產生水的第三處理。這樣的構成,由於可防止在使氫與氧反應而產生水的處理中(在此處理中,氫與水是藉由發熱反應而產生水)的過度的溫度上升,並將反應溫度控制於適當範圍內,故較佳。另外,這樣的構成,由於謀求氫的除去或進一步地低濃度化,故亦較佳。再加上這樣的構成,由於可將精製氣體(高純度氬氣)調製成含有既定濃度的氫,故較佳。In addition, the pretreatment system may further comprise a third treatment tank which performs a third treatment which has been carried out after the second treatment to react hydrogen with oxygen to produce water. Such a configuration prevents an excessive temperature rise in the treatment for generating water by reacting hydrogen with oxygen (in this treatment, hydrogen and water are generated by the exothermic reaction), and the reaction temperature is controlled appropriately. Within the scope, it is preferred. Further, such a configuration is also preferable because it is required to remove hydrogen or further reduce the concentration. Further, such a configuration is preferable because a purified gas (high-purity argon gas) can be prepared to contain hydrogen having a predetermined concentration.

【用以實施發明的最佳形態】[Best form for implementing the invention]

第1圖是顯示本發明相關的氬氣精製裝置Y的全體概略結構。氬氣精製裝置Y是具有貯留系統1、前處理系統2、PSA系統3、與回收線4,其回收含氬氣的原料氣體G0 並連續式地精製氬氣。Fig. 1 is a view showing the overall schematic configuration of an argon gas purifying apparatus Y according to the present invention. Y is an argon gas refining device having a storing system, pretreatment system 2, PSA system 3, line 4 and recycled, recovered raw material gas containing argon gas by G 0 and a continuous purification is argon.

原料氣體G0 是被用於矽拉晶爐、陶瓷燒結爐、鉻鋼脫碳爐等中的爐內氣氛氣體而混入不純物的氬氣,而從至少一個爐具(省略其圖示)連續性或斷續性地排出。此排放氣體(原料氣體G0 )的排出流量、壓力、組成等,常會隨著在爐中的實施中的步驟、爐子的操作條件等而變動,也會有急遽變動的情況。原料氣體G0 是含有氬氣作為主成分,且含有氫、氮、一氧化碳、及氧。主要的不純物例如為氫。來自爐具的原料氣體G0 的排放流量(也就是流向氬氣精製裝置Y的原料氣體G0 的供應流量),例如為100~500Nm3 /h。The source gas G 0 is an argon gas which is used for a furnace atmosphere gas in a kiln furnace, a ceramic sintering furnace, a chrome steel decarburization furnace, or the like, and is mixed with impurities, and is continuous from at least one furnace (not shown). Or intermittently discharged. The discharge flow rate, pressure, composition, and the like of the exhaust gas (the material gas G 0 ) often fluctuate depending on the steps in the execution of the furnace, the operating conditions of the furnace, and the like, and may be violently changed. The material gas G 0 contains argon as a main component and contains hydrogen, nitrogen, carbon monoxide, and oxygen. The main impurity is, for example, hydrogen. The discharge flow rate of the material gas G 0 from the furnace (that is, the supply flow rate of the material gas G 0 flowing to the argon gas refining device Y) is, for example, 100 to 500 Nm 3 /h.

成為氬氣精製裝置Y的一部分之貯留系統1,是如第1圖及第2圖所示,具有緩衝槽(buffer tank)10、除塵器11、升壓吹風器(blower)12、流量計13、貯留量檢測計14、濃度分析計15、流量控制部16、及具有原料氣體導入端E1的線17。除塵器11、流量計13、緩衝槽10、升壓吹風器12、及流量控制部16,是在線17內成直列配置。The storage system 1 which is a part of the argon gas refining device Y has a buffer tank 10, a dust remover 11, a booster blower 12, and a flow meter 13 as shown in Figs. 1 and 2 . The storage amount detector 14, the concentration analyzer 15, the flow rate control unit 16, and the line 17 having the material gas introduction end E1. The dust remover 11, the flow meter 13, the buffer tank 10, the booster blower 12, and the flow rate control unit 16 are arranged in-line in the line 17.

緩衝槽10是用以暫時貯留含氬氣的混合氣體(包含原料氣體G0 )。另外,在本實施形態中,是將緩衝槽10構成為容積可變動。容積可變動的緩衝槽10,例如是藉由可伸縮的布製容器來形成貯留空間。緩衝槽10的最大容積例如為100~200m3 。針對緩衝槽10的可變容積,是設定上側設定值VH 及下側設定值VL 。上側設定值VH 例如為80~160m3 。下側設定值VL 例如為40~80m3The buffer tank 10 is for temporarily storing a mixed gas containing argon gas (including the material gas G 0 ). Further, in the present embodiment, the buffer tank 10 is configured to have a variable volume. The buffer tank 10 whose volume is variable is formed, for example, by a retractable cloth container to form a storage space. The maximum volume of the buffer tank 10 is, for example, 100 to 200 m 3 . The variable volume of the buffer tank 10 is set to the upper set value V H and the lower set value V L . The upper set value V H is, for example, 80 to 160 m 3 . The lower set value V L is, for example, 40 to 80 m 3 .

除塵器11是將來自爐具的排放氣體之原料氣體G0 中所含的多量的粉塵、金屬粉等的固形成分從原料氣體G0 除去。這樣的除塵器11,是配置在緩衝槽10的上流側,而具有例如既定的除塵過濾器而成。The dust remover 11 removes a solid component of a large amount of dust, metal powder, or the like contained in the material gas G 0 of the exhaust gas from the furnace from the source gas G 0 . Such a dust remover 11 is disposed on the upstream side of the buffer tank 10 and has, for example, a predetermined dust filter.

升壓吹風器12是配置在緩衝槽10的下流側,且是為了將原料氣體G0 收進緩衝槽10而作動。藉由升壓吹風器12的作動,負壓作用於緩衝槽10內的氣體貯留空間,使原料氣體G0 適當地流入緩衝槽10。另外,藉由升壓吹風器12的作動,將氣體G1 從緩衝槽10導出,而向著前處理系統2送出此氣體G1Booster blower 12 is disposed on the downstream side of the buffer tank 10, and to the raw material gas G 0 incorporated into the buffer tank 10 and the actuator. By actuation, the negative pressure booster blower 12 in the gas reservoir in the buffer tank 10 leaving space for the raw material gas G 0 appropriately flows into the buffer tank 10. Further, by actuating the booster blower 12, a gas G 1 is derived from the buffer tank 10, the processing system 2 toward the front out of this gas G 1.

流量計13是計測來自爐具的排放氣體之原料氣體G0 的流入緩衝槽10的流量。貯留量檢測計14是計測正貯留於緩衝槽10的氣體的貯留量。The flow meter 13 is a flow rate of the inflow buffer tank 10 that measures the source gas G 0 of the exhaust gas from the furnace. The storage amount detector 14 measures the storage amount of the gas that is being stored in the buffer tank 10.

濃度分析計15是測定經過緩衝槽10及升壓吹風器12的氣體G1 所含的各不純物的濃度。具體而言,濃度分析計15是測定氣體G1 所含的氫、氮、一氧化碳、及氧的各自的濃度。The concentration analyzer 15 measures the concentration of each impurity contained in the gas G 1 passing through the buffer tank 10 and the booster blower 12. Specifically, the concentration analyzer 15 measures the respective concentrations of hydrogen, nitrogen, carbon monoxide, and oxygen contained in the gas G 1 .

流量控制部16是控制供應至前處理系統2等的後段的氣體G1 的流量。這樣的流量控制部16是例如可控制開合度的閥所構成。The flow rate control unit 16 controls the flow rate of the gas G 1 supplied to the subsequent stage of the pretreatment system 2 or the like. Such a flow rate control unit 16 is configured, for example, as a valve that can control the degree of opening and closing.

成為氬氣精製裝置Y的一部分的前處理系統2,是除去以後段的PSA系統3中所實行的壓力變動吸附法(PSA法)難以除去的不純物。作為在前處理系統2除去的不純物者,可列舉出氧及水。因為氧常對將精製後的氬氣作為爐內氣氛氣體而再利用之時有害,有很高的除去必要性。前處理系統2是如第1圖及第3圖所示,具有前處理槽20A、20B、20C、預熱器21、冷卻器22A、22B、22C、氫供應量控制部24A、24B、24C、溫度計25A、25B、25C、流量控制部26A、26B、氫濃度分析計27、線28A、28B、28C、28D、及旁通線28b、28c。前處理槽20A、20B、20C,是在氣體流路上連結成直列的狀態。The pretreatment system 2 which is a part of the argon gas refining device Y is an impurity which is difficult to remove by the pressure fluctuation adsorption method (PSA method) which is carried out in the PSA system 3 in the subsequent stage. Examples of the impurities removed in the pretreatment system 2 include oxygen and water. Since oxygen is often harmful when the purified argon gas is reused as an atmosphere gas in the furnace, it is highly necessary to remove it. As shown in FIGS. 1 and 3, the pretreatment system 2 includes pretreatment tanks 20A, 20B, and 20C, a preheater 21, coolers 22A, 22B, and 22C, and hydrogen supply amount control units 24A, 24B, and 24C. Thermometers 25A, 25B, and 25C, flow rate control units 26A and 26B, hydrogen concentration analyzer 27, lines 28A, 28B, 28C, and 28D, and bypass lines 28b and 28c. The pretreatment tanks 20A, 20B, and 20C are in a state of being connected in series in the gas flow path.

前處理槽20A是轉化反應槽,其用於將氣體G1 中的一氧化碳變成二氧化碳而實質上除去(一氧化碳會有對於充填於後段的前處理槽20B、20C的觸媒而言為觸媒毒的情況),其具有入口端20a及出口端20b。在前處理槽20A中,是充填著促進下列的反應式(1)所表示的轉化反應的觸媒。可用來作為此觸媒者,例如鉑系觸媒、鈀系觸媒、鉑-鈀細觸媒等的貴金屬觸媒。The pretreatment tank 20A is a conversion reaction tank for substantially removing carbon monoxide in the gas G 1 into carbon dioxide (carbon monoxide is catalytically toxic to the catalyst filled in the pretreatment tanks 20B, 20C in the latter stage). Case), having an inlet end 20a and an outlet end 20b. In the pretreatment tank 20A, a catalyst which promotes the conversion reaction represented by the following reaction formula (1) is filled. It can be used as a catalyst for the catalyst, such as a platinum-based catalyst, a palladium-based catalyst, or a platinum-palladium fine catalyst.

【化1】【化1】

前處理槽20B是轉化反應槽,其用於將經過前處理槽20A中的處理而由前處理槽20A的出口端20b導出的氣體G1 中的氫及氧變成水而將其低濃度化或實質上除去,其具有入口端20a及出口端20b。在前處理槽20B中,是充填著促進下列的反應式(2)所表示的轉化反應的觸媒。可用來作為此觸媒者,例如鉑系觸媒、銠系觸媒等的貴金屬觸媒。The pretreatment tank 20B is a conversion reaction tank for reducing the concentration of hydrogen and oxygen in the gas G 1 derived from the outlet end 20 b of the pretreatment tank 20A into water after passing through the treatment in the pretreatment tank 20A or Substantially removed, it has an inlet end 20a and an outlet end 20b. In the pretreatment tank 20B, a catalyst which promotes the conversion reaction represented by the following reaction formula (2) is filled. It can be used as a catalyst for such a catalyst, such as a platinum-based catalyst or a ruthenium-based catalyst.

【化2】[Chemical 2]

前處理槽20C是轉化反應槽,其用於將經過前處理槽20B中的處理而由前處理槽20B的出口端20b導出的氣體G1 中的氫及氧變成水而將其低濃度化或實質上除去,其具有入口端20a及出口端20b。在前處理槽20C中,是充填著促進上列的反應式(2)所表示的轉化反應的觸媒。可用來作為此觸媒者,例如鉑系觸媒、銠系觸媒等的貴金屬觸媒。The pretreatment tank 20C is a conversion reaction tank for reducing the concentration of hydrogen and oxygen in the gas G 1 derived from the outlet end 20 b of the pretreatment tank 20B into water after passing through the treatment in the pretreatment tank 20B or Substantially removed, it has an inlet end 20a and an outlet end 20b. The pretreatment tank 20C is filled with a catalyst that promotes the conversion reaction represented by the above reaction formula (2). It can be used as a catalyst for such a catalyst, such as a platinum-based catalyst or a ruthenium-based catalyst.

預熱器21是為了在到達前處理槽20A升溫氣體G1 ,例如由電熱器所構成。氫供應量控制部23是與圖外的氫貯留部連結,且與連接於前處理槽20A的入口端20a的線28A連結。氫供應量控制部23是為了控制因應需求而從氫貯留部供應至線28A的氫的流量,例如由可控制開合度、打開狀態時間等的閥所構成。溫度計25A是測定導入前處理槽20A之前的氣體G1 的溫度。The preheater 21 is configured to heat the gas G 1 before reaching the pretreatment tank 20A, for example, by an electric heater. The hydrogen supply amount control unit 23 is connected to the hydrogen storage unit outside the drawing, and is connected to the line 28A connected to the inlet end 20a of the pretreatment tank 20A. The hydrogen supply amount control unit 23 is configured to control the flow rate of hydrogen supplied from the hydrogen storage unit to the line 28A in response to a demand, and is constituted by, for example, a valve that can control the degree of opening and closing, the open state time, and the like. The thermometer 25A is a temperature of the gas G 1 before the introduction of the pretreatment tank 20A.

冷卻器22A是為了冷卻經過前處理槽20A中的處理而由前處理槽20A的出口端20b導出的氣體G1 ,而設置於線28B。冷卻器22A是例如為以冷卻水作為冷卻媒介的熱交換器所構成。旁通線28b的設置,是將其與此冷卻器22A在線上並列,而在此旁通線28b則設置有流量控制部26A。流量控制部26A,是例如由可控制開合度、打開狀態時間等的閥所構成。氧供應量控制部24B是與圖外的氧貯留部連結,且與線28B連結。氧供應量控制部24B是為了控制因應需求而從氧貯留部供應至線28B的氧的流量,例如由可控制開合度、打開狀態時間等的閥所構成。溫度計25B是測定導入前處理槽20B之前的氣體G1 的溫度。The cooler 22A is provided on the line 28B for cooling the gas G 1 derived from the outlet end 20b of the pretreatment tank 20A through the treatment in the pretreatment tank 20A. The cooler 22A is constituted, for example, by a heat exchanger using cooling water as a cooling medium. The bypass line 28b is disposed in parallel with the cooler 22A, and the bypass line 28b is provided with a flow rate control unit 26A. The flow rate control unit 26A is constituted by, for example, a valve that can control the degree of opening and closing, the time of opening, and the like. The oxygen supply amount control unit 24B is connected to the oxygen storage unit outside the drawing and is connected to the line 28B. The oxygen supply amount control unit 24B is configured to control the flow rate of oxygen supplied from the oxygen storage unit to the line 28B in response to the demand, and is constituted, for example, by a valve that can control the opening degree, the opening state time, and the like. The thermometer 25B is a temperature of the gas G 1 before the introduction of the pretreatment tank 20B.

冷卻器22B是為了冷卻經過前處理槽20B中的處理而由前處理槽20B的出口端20b導出的氣體G1 ,而設置於線28C。冷卻器22B是例如為以冷卻水作為冷卻媒介的熱交換器所構成。旁通線28c的設置,是將其與此冷卻器22B在線上並列,而在此旁通線28c則設置有流量控制部26B。流量控制部26B,是例如由可控制開合度、打開狀態時間等的閥所構成。氧供應量控制部24C是與圖外的氧貯留部連結,且與線28C連結。氧供應量控制部24C是為了控制因應需求而從氧貯留部供應至線28C的氧的流量,例如由可控制開合度、打開狀態時間等的閥所構成。氫濃度分析計27是在流動於線28C的氣體G1 添加氧之前,測定氣體G1 的氫濃度。溫度計25C是測定導入前處理槽20C之前的氣體G1 的溫度。The cooler 22B is provided on the line 28C for cooling the gas G 1 derived from the outlet end 20b of the pretreatment tank 20B through the treatment in the pretreatment tank 20B. The cooler 22B is constituted, for example, by a heat exchanger using cooling water as a cooling medium. The bypass line 28c is disposed in parallel with the cooler 22B, and the bypass line 28c is provided with a flow rate control unit 26B. The flow rate control unit 26B is constituted by, for example, a valve that can control the degree of opening and closing, the time of opening, and the like. The oxygen supply amount control unit 24C is connected to the oxygen storage unit outside the drawing and is connected to the line 28C. The oxygen supply amount control unit 24C is configured to control the flow rate of oxygen supplied from the oxygen storage unit to the line 28C in response to the demand, and is constituted, for example, by a valve that can control the opening degree, the opening state time, and the like. It is the concentration of hydrogen analyzer 27 before adding oxygen to the gas flow line G 1 28C, measurement of the hydrogen concentration in the gas G 1. The thermometer 25C is a temperature of the gas G 1 before the introduction of the pretreatment tank 20C.

冷卻器22C是為了冷卻經過前處理槽20C中的處理而由前處理槽20B的出口端20b導出的氣體G1 ,而設置於線28D。冷卻器22C是例如為以冷卻水作為冷卻媒介的熱交換器所構成。The cooler 22C is provided on the line 28D for cooling the gas G 1 derived from the outlet end 20b of the pretreatment tank 20B through the treatment in the pretreatment tank 20C. The cooler 22C is constituted, for example, by a heat exchanger using cooling water as a cooling medium.

本實施形態中的前處理系統2,是具有如上所述的三段的轉化反應槽。然而,因應將氣體G1 供應至PSA系統3之前從此氣體G1 所欲除去的不純物的種類及量,亦可以將前處理系統2構成為具備一段的轉化反應槽、或二段的轉化反應槽、或四段的轉化反應槽。或者是,將氣體G1 供應至PSA系統3之前並無從此氣體G1 所欲除去的不純物的 情況,則亦可不設置前處理系統2。The pretreatment system 2 in the present embodiment is a conversion reaction tank having three stages as described above. However, because should the gas G 1 supplied to the type and amount of gas from the PSA system before the 3 G 1 is desired to remove impurities, the pretreatment system can also be configured as a conversion reaction vessel 2 includes a segment, or conversion of the reaction vessel Sec Or a four-stage conversion reaction tank. Alternatively, the gas G 1 supplied to the case from the PSA system is not desired to remove the gas before the G 1 3 impurities, the pretreatment system can not set 2.

成為氬氣精製裝置Y的一部分的PSA系統3,是如第1圖及第4圖所示,具有PSA裝置30。PSA裝置30是具有吸附塔31A、31B、31C、升壓機32、線33~36,其利用來自前處理系統2的氣體G1 (含氬氣)的壓力變動吸附法(PSA法),而濃縮分離氬氣。The PSA system 3 which is a part of the argon gas refining device Y has the PSA device 30 as shown in Figs. 1 and 4 . The PSA unit 30 has adsorption towers 31A, 31B, and 31C, a pressure increaser 32, and lines 33 to 36, which utilize a pressure fluctuation adsorption method (PSA method) of gas G 1 (argon-containing gas) from the pretreatment system 2, and The argon gas was separated by concentration.

吸附塔31A、31B、31C各自在兩端具有氣體通過口31a、31b,並在氣體通過口31a、31b之間,充填有用以選擇性吸附氣體G1 所含的不純物的吸附劑。例如,可使用碳分子篩(carbon molecular sieves;CMS)來作為用以吸附作為不純物的二氧化碳的吸附劑。例如,可使用沸石分子篩(zeolite molecular sieves;ZMS)來作為用以吸附作為不純物的氮、一氧化碳等的吸附劑。例如,可使用氧化鋁來作為用以吸附作為不純物的水分的吸附劑。可以在吸附塔31A、31B、31C充填一種的吸附劑,亦可以在吸附塔31A、31B、31C充填複數種的吸附劑。關於充填於吸附塔31A、31B、31C內的吸附劑的種類、數量等,是因應欲在吸附塔31A、31B、31C除去的不純物的種類及量來決定。Adsorption columns 31A, 31B, 31C each having a gas passage openings 31a, 31b at both ends, and the impurity gas in the adsorbent 31a, between 31b, selectively adsorbing the gas filling to be useful included in G 1 through opening. For example, carbon molecular sieves (CMS) can be used as an adsorbent for adsorbing carbon dioxide as an impurity. For example, zeolite molecular sieves (ZMS) can be used as an adsorbent for adsorbing nitrogen, carbon monoxide or the like as an impurity. For example, alumina can be used as an adsorbent for adsorbing moisture as an impurity. One type of adsorbent may be charged in the adsorption towers 31A, 31B, and 31C, or a plurality of adsorbents may be charged in the adsorption towers 31A, 31B, and 31C. The type and amount of the adsorbent charged in the adsorption towers 31A, 31B, and 31C are determined in accordance with the type and amount of impurities to be removed in the adsorption towers 31A, 31B, and 31C.

升壓機32是具有氣體吸入口32a及氣體送出口32b。氣體吸入口32a是與前處理系統2中的線28D連結。這樣的升壓機32的目的是將從氣體吸入口32a吸引的氣體G1 從氣體送出口32b向著吸附塔31A、31B、31C供應及送出,例如為壓縮機。The booster 32 has a gas suction port 32a and a gas delivery port 32b. The gas suction port 32a is coupled to the wire 28D in the pretreatment system 2. This object booster 32 from the gas inlet port 32a is sucked from the gas feeding the gas G 1 toward the outlet 32b adsorption column 31A, 31B, 31C and out the supply, for example a compressor.

線33是具有主幹路33’及分支路33A、33B、33C,主幹路33’是連接升壓機32的氣體送出口32b,分支路33A、33B、33C是各自連接吸附塔31A、31B、31C的各氣體通過口31a側。在分支路33A、33B、33C,附設有可以在開狀態與閉狀態之間切換的自動閥33a、33b、33c。The line 33 has a trunk line 33' and branch paths 33A, 33B, 33C. The trunk line 33' is a gas delivery port 32b to which the booster 32 is connected. The branch paths 33A, 33B, and 33C are connected to the adsorption towers 31A, 31B, and 31C, respectively. Each gas passes through the port 31a side. Automatic valves 33a, 33b, and 33c that can be switched between an open state and a closed state are attached to the branch paths 33A, 33B, and 33C.

線34是具有主幹路34’及分支路34A、34B、34C,主幹路34’是具有精製氣體導出端E2,分支路34A、34B、34C是各自連接吸附塔31A、31B、31C的各氣體通過口31b側。在分支路33A、33B、33C,附設有可以在開狀態與閉狀態之間切換的自動閥34a、34b、34c。The line 34 has a trunk road 34' and branch paths 34A, 34B, 34C. The trunk road 34' has a purified gas lead-out end E2, and the branch paths 34A, 34B, 34C are gases that are connected to the adsorption towers 31A, 31B, and 31C, respectively. Port 31b side. Automatic valves 34a, 34b, and 34c that can be switched between an open state and a closed state are attached to the branch paths 33A, 33B, and 33C.

線35是具有主幹路35’及分支路35A、35B、35C,分支路35A、35B、35C是各自連接吸附塔31A、31B、31C的各氣體通過口31b側。在分支路35A、35B、35C,附設有可以在開狀態與閉狀態之間切換的自動閥35a、35b、35c。The line 35 has a trunk line 35' and branch paths 35A, 35B, and 35C, and the branch paths 35A, 35B, and 35C are side of the respective gas passage ports 31b to which the adsorption towers 31A, 31B, and 31C are connected. Automatic valves 35a, 35b, and 35c that can be switched between an open state and a closed state are attached to the branch paths 35A, 35B, and 35C.

線36是具有主幹路36’及分支路36A、36B、36C,主幹路36’是具有氣體排出端E3,分支路36A、36B、36C是各自連接吸附塔31A、31B、31C的各氣體通過口31a側。在分支路36A、36B、36C,附設有可以在開狀態與閉狀態之間切換的自動閥36a、36b、36c。The line 36 has a trunk road 36' and branch paths 36A, 36B, 36C, the trunk road 36' has a gas discharge end E3, and the branch paths 36A, 36B, 36C are respective gas passage ports respectively connected to the adsorption towers 31A, 31B, 31C. 31a side. Automatic valves 36a, 36b, and 36c that can be switched between an open state and a closed state are attached to the branch paths 36A, 36B, and 36C.

本實施形態中的PSA系統3或PSA裝置30是具有如上所述的吸附塔31A、31B、31C。然而,亦可以將PSA系統3構成為具備一個吸附塔、或二個吸附塔、或四個以上的吸附塔者。The PSA system 3 or the PSA unit 30 in the present embodiment has the adsorption towers 31A, 31B, and 31C as described above. However, the PSA system 3 may be configured to include one adsorption tower, two adsorption towers, or four or more adsorption towers.

成為氬氣精製裝置Y的一部分的回收線4,是如第1圖所示,連結PSA系統3或PSA裝置30中的上述線36、與貯留系統1中的上述緩衝槽10。在回收線4,附設有可以在開狀態與閉狀態之間切換的自動閥4a。這樣的回收線4,是使從PSA裝置中的吸附塔31A、31B、31C的各氣體通過口31a側排出的既定氣體回到緩衝槽10。The recovery line 4 which is a part of the argon gas refining device Y is connected to the line 36 in the PSA system 3 or the PSA unit 30 and the buffer tank 10 in the storage system 1 as shown in Fig. 1 . On the recovery line 4, an automatic valve 4a that can be switched between an open state and a closed state is attached. In the recovery line 4, the predetermined gas discharged from the respective gas passage ports 31a of the adsorption towers 31A, 31B, and 31C in the PSA apparatus is returned to the buffer tank 10.

使用具有如以上構造的氬器精製裝置Y,則可以實行本發明相關的氬氣精製方法。The argon gas refining method according to the present invention can be carried out by using the argon refining device Y having the above configuration.

在貯留系統1中,升壓吹風器12作動,而從線17的原料氣體導入端E1收到原料氣體G0 。收到的原料氣體G0 因通過除塵器11而除去既定的固形成分,在流量計13受到流量的計測之後,被收進緩衝槽10。在緩衝槽10中,亦從PSA系統13收到既定的氣體。緩衝槽10中的氣體貯留空間的容積如上所述是可變的,緩衝槽10或其氣體貯留空間所貯留的氣體貯留量是以貯留量檢測計14來計測。然後,將氣體G1 從緩衝槽10導出。關於氣體G1 ,是藉由濃度分析計15來測定各不純物的濃度。以藉由濃度分析計15所測定的氫濃度為X10 、氧濃度為X20 、一氧化碳濃度為X30 。另外,關於氣體G1 ,是藉由流量控制部16來調節流量。氣體G1 的流量是在PSA系統3中的吸附塔31A、31B、31C的任一個開始後文所述的吸附步驟之時(吸附塔切換時)被更新。具體而言,氣體G1 的流量是如下所述而被更新。In reserving system 1, the booster blower 12 actuated, and the raw material gas G 0 is received from the feed gas inlet end E1 line 17. The received raw material gas G 0 is removed by the precipitator 11 to remove a predetermined solid component, and after the flow meter 13 receives the flow rate, it is taken into the buffer tank 10. In the buffer tank 10, a predetermined gas is also received from the PSA system 13. The volume of the gas storage space in the buffer tank 10 is variable as described above, and the gas storage amount stored in the buffer tank 10 or its gas storage space is measured by the storage amount detector 14. Then, the gas G 1 is led out from the buffer tank 10. Regarding the gas G 1 , the concentration of each impurity is measured by the concentration analyzer 15 . The hydrogen concentration measured by the concentration analyzer 15 is X 10 , the oxygen concentration is X 20 , and the carbon monoxide concentration is X 30 . Further, regarding the gas G 1 , the flow rate is controlled by the flow rate control unit 16 . The flow rate of the gas G 1 is updated at the time of the adsorption step described later (when the adsorption column is switched) at the start of any of the adsorption columns 31A, 31B, and 31C in the PSA system 3. Specifically, the flow rate of the gas G 1 is updated as described below.

首先,針對以流量計13來計測的原料氣體G0 的流量,求得吸附塔31A、31B、31C的其中之一在後文所述的吸附步驟的開始之時(吸附塔切換時)為止的既定時間(例如10秒)的平均流量,來作為基準流量。接下來,換算為所求得的平均流量(基準流量)相對於針對全體裝置的估計或設定的負荷流量範圍、也就是流量控制部16的流量控制範圍(例如為0~400Nm3 /h)的比例(α%)。利用此比例(α%),計算出針對氣體G1之下次應設定的流量。例如吸附塔切換時藉由貯留量檢測計14所計測的緩衝槽10的氣體貯留量為上述的上側設定值VH 以上的情況,在α%加上β%,而計算出流量控制部16的流量控制範圍(例如為0~400Nm3 /h)的(α+β)%的流量,而採用此計算出的流量來作為氣體G1 的下一個流量。例如吸附塔切換時藉由貯留量檢測計14所計測的緩衝槽10的氣體貯留量為上述的下側設定值VL 以下的情況,從α%減去β%,而計算出流量控制部16的流量控制範圍(例如為0~400Nm3 /h)的(α-β)%的流量,而採用此計算出的流量來作為氣體G1 的下一個流量。例如吸附塔切換時藉由貯留量檢測計14所計測的緩衝槽10的氣體貯留量為低於上述的上側設定值VH 且高於上述的下側設定值VL 的情況,則計算出流量控制部16的流量控制範圍(例如為0~400Nm3 /h)的α%的流量,而採用此計算出的流量來作為氣體G1 的下一個流量。針對氣體G1 的如上述更新的流量,是由流量控制部16來維持到下一次的吸附塔切換為止。First, the flow rate of the material gas G 0 measured by the flow meter 13 is determined such that one of the adsorption towers 31A, 31B, and 31C is at the start of the adsorption step described later (when the adsorption tower is switched). The average flow rate for a given time (for example, 10 seconds) is used as the reference flow rate. Next, it is converted into the estimated average flow rate (reference flow rate) with respect to the estimated or set load flow rate range for the entire device, that is, the flow rate control range of the flow rate control unit 16 (for example, 0 to 400 Nm 3 /h). Proportion (α%). Using this ratio (α%), the flow rate to be set next for the gas G1 is calculated. For example, when the gas storage amount of the buffer tank 10 measured by the storage amount detector 14 is equal to or higher than the above-described upper setting value V H at the time of the adsorption tower switching, β% is added to α%, and the flow rate control unit 16 is calculated. The flow rate is controlled by (α + β)% of the flow rate range (for example, 0 to 400 Nm 3 /h), and the calculated flow rate is used as the next flow rate of the gas G 1 . For example, when the gas storage amount of the buffer tank 10 measured by the storage amount detector 14 is equal to or less than the lower side set value V L described above, the flow rate control unit 16 is calculated by subtracting β% from α%. The flow rate of the flow control range (for example, 0 to 400 Nm 3 /h) is (α - β)%, and the calculated flow rate is used as the next flow rate of the gas G 1 . For example, when the gas storage amount of the buffer tank 10 measured by the storage amount detector 14 at the time of the adsorption tower switching is lower than the above-described upper setting value V H and higher than the lower setting value V L described above, the flow rate is calculated. The flow rate of the control unit 16 (for example, 0 to 400 Nm 3 /h) is a flow rate of α%, and the calculated flow rate is used as the next flow rate of the gas G 1 . As for the flow rate of the update of the gas G 1, the flow control unit 16 is maintained until the next adsorption Taqie change so far.

作為流量更新中的參數的β的值,可因應針對原料氣體G0 的流量之能預先掌握的限度中的變動量、變動時間等來作設定。藉由適當地選擇β的值,可以抑制緩衝槽10內的氣體貯留量的變化,而使從緩衝槽10所供應的氣體G1 的氣體G1 的流量穩定化。藉此,可以減輕對於後段的前處理系統2及PSA系統3之伴隨著氣體G1 的流量變化等的負荷變動,而可以謀求負荷的穩定化。The value of β which is a parameter in the flow rate update can be set in accordance with the fluctuation amount, the fluctuation time, and the like in the limit that can be grasped in advance for the flow rate of the material gas G 0 . By appropriately selecting the value of β can be suppressed in the gas reserving an amount of variation within the buffer tank 10, the buffer tank 10 from the gas supplying the gas G 1 G 1 flow stabilization. As a result, load fluctuations such as changes in the flow rate of the gas G 1 in the pretreatment system 2 and the PSA system 3 in the subsequent stage can be reduced, and the load can be stabilized.

在流量控制部16受到流量控制的氣體G1 ,是被供應至前處理系統2。在前處理系統2中,是依序對氣體G1 進行在前處理槽20A的一氧化碳的除去(第一處理)、在前處理槽20B的氫濃度的降低或氫的除去(第二處理)、在前處理槽20C的氫濃度的調整或氫的除去(第三處理)。具體而言,在前處理槽20A中,如上所述,是藉由反應式(1)所表的轉化反應而將氣體G1 中的一氧化碳變成二氧化碳來將其實質上除去。在前處理槽20B中,如上所述,是藉由反應式(2)所表的轉化反應而將氣體G1 中的氫及氧變成水來將其低濃度化或實質上除去。在前處理槽20C中,如上所述,是藉由反應式(2)所表的轉化反應而將氣體G1 中的氫及氧變成水來將其低濃度化或實質上除去。The gas G 1 that is subjected to the flow rate control by the flow rate control unit 16 is supplied to the pretreatment system 2. In the pretreatment system 2, the gas G 1 is sequentially subjected to removal of carbon monoxide in the pretreatment tank 20A (first treatment), reduction in hydrogen concentration in the pretreatment tank 20B, or removal of hydrogen (second treatment), The adjustment of the hydrogen concentration in the pretreatment tank 20C or the removal of hydrogen (third treatment). Specifically, in the pretreatment tank 20A, as described above, the carbon monoxide in the gas G 1 is converted into carbon dioxide by the conversion reaction represented by the reaction formula (1), and is substantially removed. Processing tank 20B in the front, as described above, by the reaction of formula (2) Conversion reaction of the Table 1 and the gas G of hydrogen and oxygen into water to which a low concentration or substantially removed. 20C in the first treatment tank, as described above, by the conversion reaction of formula (2) in Table 1 and the gas G of hydrogen and oxygen into water to which a low concentration or substantially removed.

在將氣體G1 導入前處理槽20A之前,調節氣體G1 的溫度。具體而言,氣體G1 的由溫度計25A所測定的溫度,是在線28A中通過預熱器21之時而升溫至例如130~150℃。藉此,使前處理槽的反應溫度為例如250℃以下。對於促進上述反應式(1)所表的轉化反應而言,前處理槽20A中的反應溫度較好為130℃以上。對於在前處理槽20A中充分抑制產生甲烷的反應而言,前處理槽20A中的反應溫度較好為250℃以下。The temperature of the gas G 1 is adjusted before the gas G 1 is introduced into the pretreatment tank 20A. Specifically, the temperature measured by the thermometer 25A gas G 1 is allowed to warm to line 28A, for example, 130 ~ 150 ℃ sometimes through the preheater 21. Thereby, the reaction temperature of the pretreatment tank is made into, for example, 250 ° C or lower. In order to promote the conversion reaction shown in the above reaction formula (1), the reaction temperature in the pretreatment tank 20A is preferably 130 ° C or higher. The reaction temperature in the pretreatment tank 20A is preferably 250 ° C or less in the reaction for sufficiently suppressing the generation of methane in the pretreatment tank 20A.

在將氣體G1 導入前處理槽20A之前,在氣體G1 ,藉由氫供應量控制部23的作動而添加視需求之既定量的氫、並藉由氧供應量控制部24A的作動而添加視需求之既定量的氧。氫的添加量,是根據以上述的濃度分析計15所測定的氫濃度X10 所決定。以添加氫之後導入至前處理槽20A的氣體G1 的氫濃度為X11 。氧的添加量,是根據以上述的濃度分析計15所測定的氧濃度X20 及一氧化碳濃度X30 所決定。以添加氧之後導入至前處理槽20A的氣體G1 的氧濃度為X21 。為了促進上述反應式(1)所表的轉化反應而在前處理槽20A充分除去一氧化碳,導入前處理槽的氣體G1 所含的氧,較好為導入前處理槽20A的氣體G1 所含的一氧化碳的1.0~1.5倍當量。在前處理槽20A中,如上所述,發生上述反應式(1)所表的轉化反應,而將氣體G1 中的一氧化碳變成二氧化碳而將其實質上地除去。In the prior 20A, the gas G 1, by the hydrogen supply amount control unit for the actuator 23 and the additional gas G 1 introduced into the pretreatment tank depending on the needs of both the amount of hydrogen, and by actuating the oxygen supply quantity control unit 24A is added Quantitative oxygen as needed. The amount of hydrogen added is determined based on the hydrogen concentration X 10 measured by the concentration analyzer 15 described above. The hydrogen concentration of the gas G 1 introduced into the pretreatment tank 20A after the addition of hydrogen is X 11 . The amount of oxygen added is determined based on the oxygen concentration X 20 and the carbon monoxide concentration X 30 measured by the concentration analyzer 15 described above. The oxygen concentration of the gas G 1 introduced into the pretreatment tank 20A after the addition of oxygen is X 21 . In order to promote the above reaction formula (1) into the reaction while the pretreatment tank Table 20A sufficiently remove carbon monoxide, oxygen gas G is introduced into the pretreatment tank 1 contained, is preferably introduced into the pretreatment tank 20A is contained in the gas G 1 1.0 to 1.5 times the equivalent of carbon monoxide. In the pretreatment tank 20A, as described above, the conversion reaction shown in the above reaction formula (1) occurs, and carbon monoxide in the gas G 1 is turned into carbon dioxide to be substantially removed.

在前處理槽20A之後、將氣體G1 導入前處理槽20B之前,調節氣體G1 的的溫度。具體而言,藉由調整通過設於作為主線的線28B的冷卻器22A的氣體與通過旁通線28b的氣體的流量比,而將導入前處理槽20B之前的氣體G1 的溫度調節為以溫度計25B所測定的溫度之例如50~60℃。流量比的調整,是藉由流量控制部26A的作動來進行。藉由這樣的手法,使前處理槽20B中的反應溫度為例如100~350℃。對於促進上述反應式(2)所表的轉化反應而言,前處理槽20B中的反應溫度較好為100~350℃。另外,假設前段的前處理槽20A中發生因氫與氧的反應而產生作為副產物的水的情況,由於水分會成為前處理槽20B內的觸媒的活性阻害要因,導入至前處理槽20B的氣體G1 的溫度,較好為凝結溫度(例如50℃)以上。After the first treatment tank 20A, a gas G 1 introduced into the pretreatment tank prior 20B, regulating the temperature of the gas G 1. Specifically, by adjusting the gas cooler is provided through line 22A, 28B as the flow rate ratio of the main line through a bypass line 28b of the gas, and the temperature of the gas G 1 introduced before the pre-treatment is adjusted to the groove 20B The temperature measured by the thermometer 25B is, for example, 50 to 60 °C. The adjustment of the flow rate ratio is performed by the operation of the flow rate control unit 26A. By such a method, the reaction temperature in the pretreatment tank 20B is, for example, 100 to 350 °C. In order to promote the conversion reaction shown in the above reaction formula (2), the reaction temperature in the pretreatment tank 20B is preferably from 100 to 350 °C. In addition, it is assumed that water as a by-product is generated by the reaction of hydrogen and oxygen in the pretreatment tank 20A in the preceding stage, and moisture is introduced into the pretreatment tank 20B because the activity of the catalyst in the pretreatment tank 20B is active. The temperature of the gas G 1 is preferably a condensation temperature (for example, 50 ° C) or more.

在將氣體G1 導入前處理槽20B之前,在氣體G1 ,藉由氧供應量控制部24B的作動而添加視需求之既定量的氧。氧的添加量,是根據以上述的濃度分析計15所測定的氧濃度X20 及一氧化碳濃度X30 還有在前處理槽20A之前添加的氧量所決定。以添加氧之後導入至前處理槽20B的氣體G1 的氧濃度為X22 。上述反應式(2)所表的轉化反應為發熱反應,導入前處理槽20B的氣體G1 所含的氧,較好為使前處理槽20B中的反應溫度不超過350℃的量。在前處理槽20B中,如上所述,發生上述反應式(2)所表的轉化反應,而將氣體G1 中的氫及氧變成水而將其實質上地除去或低濃度化。G 1 prior to the gas introduced into the pretreatment tank 20B, the gas G 1, the oxygen supply quantity control unit by the actuation of 24B which is added a predetermined amount of oxygen as needed. The amount of oxygen added is determined based on the oxygen concentration X 20 and the carbon monoxide concentration X 30 measured by the concentration analyzer 15 described above and the amount of oxygen added before the pretreatment tank 20A. The oxygen concentration of the gas G 1 introduced into the pretreatment tank 20B after the addition of oxygen is X 22 . Conversion of the above-described reaction formula (2) in Table reaction is an exothermic reaction, introduction of oxygen contained in the groove 20B pretreatment gas G 1, the amount is preferably 350 deg.] C reaction temperature of the pretreatment is not more than the groove 20B. In the pretreatment tank 20B, as described above, the conversion reaction shown in the above reaction formula (2) occurs, and hydrogen and oxygen in the gas G 1 are turned into water to be substantially removed or reduced in concentration.

在前處理槽20B之後、將氣體G1 導入前處理槽20C之前,調節氣體G1 的的溫度。具體而言,藉由調整通過設於作為主線的線28C的冷卻器22B的氣體與通過旁通線28c的氣體的流量比,而將導入前處理槽20C之前的氣體G1 的溫度調節為以溫度計25C所測定的溫度之例如50~60℃。流量比的調整,是藉由流量控制部26B的作動來進行。藉由這樣的手法,使前處理槽20C中的反應溫度為例如100~350℃。對於促進上述反應式(2)所表的轉化反應而言,前處理槽20B中的反應溫度較好為100~350℃。另外,由於水分會成為前處理槽20C內的觸媒的活性阻害要因,導入至前處理槽20C的氣體G1 的溫度,較好為凝結溫度(例如50℃)以上。After the first treatment tank 20B, the gas introduced into the pretreatment tank G 1 prior to 20C, adjusting the temperature of the gas G 1. Specifically, by adjusting the gas provided through the main line to the line 28C cooler 22B as the ratio of the flow through the bypass line 28c of gas, and the temperature of the gas G 1 introduced before the pre-treatment tank was adjusted to 20C to The temperature measured by the thermometer 25C is, for example, 50 to 60 °C. The adjustment of the flow rate ratio is performed by the operation of the flow rate control unit 26B. By such a method, the reaction temperature in the pretreatment tank 20C is, for example, 100 to 350 °C. In order to promote the conversion reaction shown in the above reaction formula (2), the reaction temperature in the pretreatment tank 20B is preferably from 100 to 350 °C. Further, since the water will become an active catalyst in the pretreatment tank due to encumber 20C, 20C is introduced into the treatment tank temperature gas G 1 is a front, preferably condensation temperature (e.g. 50 ℃) above.

在將氣體G1 導入前處理槽20C之前,在以氫濃度分析計27測定氣體G1 的氫濃度之後,藉由氧供應量控制部24C的作動而添加視需求之既定量的氧。以導入至前處理槽20C的氣體G1 的氫濃度為X13 。氧的添加量,是根據以上述的濃度分析計15所測定的氧濃度X20 及一氧化碳濃度X30 、在前處理槽20A之前添加的氧量、在前處理槽20B之前添加的氧量、還有由氫濃度分析計27所測定的氫濃度X13 所決定。以添加氧之後導入至前處理槽20C的氣體G1 的氧濃度為X23 。為了藉由上述反應式(2)所表的轉化反應而在前處理槽20C除去氫,導入至前處理槽20C的氣體G1 所含的氧,較好為導入至前處理槽20C的氣體G1 所含的氫的1/2當量。另外,為了將氣體G1 中的氫低濃度化到既定程度,在1/2X13 >X23 的範圍將X23 調節為既定值。在前處理槽20C中,如上所述,發生上述反應式(2)所表的轉化反應,而將氣體G1 中的氫及氧變成水而將其實質上地除去或低濃度化。在從以氬氣精製裝置Y所精製的氬氣除去氫的情況中,在前處理槽20B可以充分除去氫的情況中,則不一定要在前處理槽20C及緊接其之前配置溫度調節裝置等。G 1 prior to the gas introduced into the pretreatment tank 20C, after the hydrogen concentration of analyte concentration determination of hydrogen gas G 1 meter 27, both of the added amount of oxygen as needed by the oxygen supply quantity control unit 24C actuation. The hydrogen concentration of the gas G 1 introduced into the pretreatment tank 20C is X 13 . The amount of oxygen added is based on the oxygen concentration X 20 and the carbon monoxide concentration X 30 measured by the concentration analyzer 15 described above, the amount of oxygen added before the pretreatment tank 20A, the amount of oxygen added before the pretreatment tank 20B, and It is determined by the hydrogen concentration X 13 measured by the hydrogen concentration analyzer 27. The oxygen concentration of the gas G 1 introduced into the pretreatment tank 20C after the addition of oxygen is X 23 . To by the above reaction formula (2) into the reaction while the pretreatment tank Table 20C to remove oxygen gas G is hydrogen, introduced into the pretreatment tank 1 contained in the 20C, is preferably introduced into the pretreatment tank of gas G 20C 1 1/2 equivalent of hydrogen contained in 1. Further, in order to lower the concentration of hydrogen in the gas G 1 to a predetermined level, X 23 is adjusted to a predetermined value in the range of 1/2X 13 > X 23 . In the pretreatment tank 20C, as described above, the conversion reaction shown in the above reaction formula (2) occurs, and hydrogen and oxygen in the gas G 1 are turned into water to be substantially removed or reduced in concentration. In the case where hydrogen is removed from the argon gas purified by the argon purifying apparatus Y, in the case where the pretreatment tank 20B can sufficiently remove hydrogen, it is not necessary to arrange the temperature adjusting means in the pretreatment tank 20C and immediately before it. Wait.

在經過前處理槽20C之後,藉由通過冷卻器22C來調節氣體G1 的溫度。通過冷卻器22C之後的氣體G1 的溫度例如為20~40℃。After pre-treatment tank 20C, by adjusting the temperature of the gas G 1 through the cooler 22C. The temperature of the gas G 1 after passing through the cooler 22C is, for example, 20 to 40 °C.

在前處理中已受到既定的前處理的氣體G1 ,是將其供應至PSA系統3。在PSA系統3及回收線4中,在PSA裝置30的驅動之時,以第5圖至第7圖所示的樣態來切換自動閥33a~33c、34a~34c、35a~35c、36a~36d、4a,藉此實現裝置內的所欲的氣體的流動狀態,而可以重複以下的步驟1~15所構成的循環(在第5圖至第7圖中,以○來表示各自動閥的開狀態、且以×來表示閉狀態)。在本方法的1個循環中,是在吸附塔31A、31B、31C各自進行吸附步驟、第一減壓步驟、第二減壓步驟、第一脫附步驟、第二脫附步驟、第一清潔步驟、第二清潔步驟、第一升壓步驟、及第二升壓步驟。第8圖是顯示步驟1~5中的在PSA裝置30的氣體的流動狀態。第9圖是顯示步驟6~10中的在PSA裝置30的氣體的流動狀態。第10圖是顯示步驟11~15中的在PSA裝置30的氣體的流動狀態。The gas G 1 that has been subjected to the predetermined pretreatment in the pretreatment is supplied to the PSA system 3. In the PSA system 3 and the recovery line 4, when the PSA device 30 is driven, the automatic valves 33a to 33c, 34a to 34c, 35a to 35c, and 36a are switched in the manner shown in Figs. 5 to 7 36d, 4a, thereby realizing the flow state of the desired gas in the device, and repeating the cycle constituted by the following steps 1 to 15 (in the fifth to seventh figures, the automatic valve is indicated by ○ The open state and the closed state are indicated by x). In one cycle of the method, each of the adsorption columns 31A, 31B, and 31C performs an adsorption step, a first depressurization step, a second decompression step, a first desorption step, a second desorption step, and a first cleaning. a step, a second cleaning step, a first step of boosting, and a second step of boosting. Fig. 8 is a view showing the flow state of the gas in the PSA unit 30 in the steps 1 to 5. Fig. 9 is a view showing the flow state of the gas in the PSA unit 30 in the steps 6 to 10. Fig. 10 is a view showing the flow state of the gas in the PSA unit 30 in the steps 11 to 15.

在步驟1中,如第5圖所示選擇各自動閥的開閉狀態、且藉由升壓機32的作動,而達成如第8圖(a)所示的氣體流動狀態,而在吸附塔31A進行吸附步驟、在吸附塔31B進行第一清潔步驟、在吸附塔31C進行第一減壓步驟。In step 1, as shown in Fig. 5, the opening and closing state of each automatic valve is selected, and the operation of the booster 32 is performed to achieve the gas flow state as shown in Fig. 8(a), and in the adsorption tower 31A. The adsorption step is performed, the first cleaning step is performed in the adsorption column 31B, and the first depressurization step is performed in the adsorption column 31C.

一併參照第4圖及第8圖(a)而可以更容易理解,在步驟1中,將氣體G1 導入處於既定的高壓狀態的吸附塔31A的氣體通過口31a側,使吸附塔31A內的吸附劑吸附此氣體G1 中的不純物(二氧化碳、水、氮等),將氬氣富化的精製氣體G2 從吸附塔31A的氣體通過口31b側導出。精製氣體G2 是經由線34而從精製氣體導出端E2而被取出到裝置外。在此同時,在步驟1中,將經過後文所述的步驟1~15(吸附步驟)的吸附塔31C的內部降壓,而從吸附塔31C的氣體通過口31b側導出氣體G3 。此氣體G3 是經由線35而被導引至吸附塔31B。在此同時,在步驟1中,將來自吸附塔31C的氣體G3 作為清潔氣體而導入至經過後文所述的步驟15(第二脫附步驟)的吸附塔31B的氣體通過口31b側,並從吸附塔31B的氣體通過口31a側導出氣體G3 ’(沖洗用氣體)。此氣體G3 ’是經由線36而從氣體排出端E3被排出到裝置外。Referring also to FIG.4 and FIG. 8 (a) and may be more readily understood in step 1, the gas G is introduced into a gas adsorption column 31A of a predetermined high-pressure state through the mouth 31a side, so that the adsorption tower 31A the adsorbent gas G 1 in this impurity (carbon dioxide, water, nitrogen, etc.), argon enriched purified gas G 2 is derived from the adsorption tower through a gas inlet 31A side 31b. The purified gas G 2 is taken out from the purified gas outlet end E2 via the line 34 and taken out of the apparatus. At the same time, in step 1, the inside of the adsorption tower 31C which has passed through the steps 1 to 15 (adsorption step) described later is stepped down, and the gas G 3 is led out from the gas passage opening 31b side of the adsorption tower 31C. This gas G 3 is guided to the adsorption tower 31B via the line 35. At the same time, in step 1, the gas G 3 from the adsorption tower 31C is introduced as a cleaning gas to the gas passage port 31b side of the adsorption tower 31B which has passed through the step 15 (second desorption step) described later. The gas G 3 ' (flushing gas) is led out from the gas passage opening 31a side of the adsorption tower 31B. This gas G 3 ' is discharged from the gas discharge end E3 to the outside of the apparatus via the line 36.

在步驟2中,如第5圖所示選擇各自動閥的開閉狀態、且藉由升壓機32的作動,而達成如第8圖(b)所示的氣體流動狀態,而在吸附塔31A進行吸附步驟、在吸附塔31B進行第二清潔步驟、在吸附塔31C進行第一減壓步驟。In step 2, as shown in Fig. 5, the opening and closing state of each automatic valve is selected, and the operation of the booster 32 is performed to achieve the gas flow state as shown in Fig. 8(b), and in the adsorption tower 31A. The adsorption step is performed, the second cleaning step is performed in the adsorption column 31B, and the first depressurization step is performed in the adsorption column 31C.

一併參照第4圖及第8圖(b)而可以更容易理解,在步驟2中,在吸附塔31A接續步驟1而進行吸附步驟,而導出精製氣體G2 。在此同時,在步驟2中,在吸附塔31C接續步驟1而進行第一減壓步驟。在此同時,在步驟2中,接續步驟1將來自吸附塔31C的氣體G3 作為清潔氣體而導入至吸附塔31B的氣體通過口31b側,並從吸附塔31B的氣體通過口31a側導出氣體G3 ”(沖洗用氣體)。此氣體G3 ”是經由線36及回收線4而導入至緩衝槽10,而被貯留於緩衝槽10。Referring to Fig. 4 and Fig. 8(b) together, it can be more easily understood that in step 2, the adsorption step is performed in the adsorption tower 31A following the step 1, and the purified gas G 2 is derived. At the same time, in the step 2, the first depressurization step is performed in the adsorption tower 31C following the step 1. At the same time, in the second step, the gas G 3 from the adsorption tower 31C is introduced as a cleaning gas to the gas passage port 31b side of the adsorption tower 31B, and the gas is led out from the gas passage port 31a side of the adsorption tower 31B. G 3 ” (flushing gas). This gas G 3 ′′ is introduced into the buffer tank 10 via the line 36 and the recovery line 4 , and is stored in the buffer tank 10 .

在步驟3中,如第5圖所示選擇各自動閥的開閉狀態、且藉由升壓機32的作動,而達成如第8圖(c)所示的氣體流動狀態,而在吸附塔31A進行吸附步驟、在吸附塔31B進行第一升壓步驟、在吸附塔31C進行第二減壓步驟。In step 3, as shown in Fig. 5, the opening and closing state of each automatic valve is selected, and the operation of the booster 32 is performed to achieve the gas flow state as shown in Fig. 8(c), and in the adsorption tower 31A. The adsorption step is performed, the first pressure increasing step is performed in the adsorption column 31B, and the second pressure reduction step is performed in the adsorption column 31C.

一併參照第4圖及第8圖(c)而可以更容易理解,在步驟3中,在吸附塔31A接續步驟2而進行吸附步驟,而導出精製氣體G2 。在此同時,在步驟3中,在吸附塔31C接續步驟2而將吸附塔31C的內部降壓,從吸附塔31C的氣體通過口31b側導出氣體G4 。氣體G4 是經由線35而被導引至吸附塔31B。在此同時,在步驟3中,將來自吸附塔31C的氣體G4 作為升壓氣體而導入至吸附塔31B的氣體通過口31b側,將吸附塔31B的內部升壓。Referring to Fig. 4 and Fig. 8(c) together, it can be more easily understood that in step 3, the adsorption tower 31A is followed by step 2 to carry out the adsorption step, and the purified gas G 2 is derived. At the same time, in step 3, the adsorption tower 31C is connected to step 2 to lower the inside of the adsorption tower 31C, and the gas G 4 is led out from the gas passage opening 31b side of the adsorption tower 31C. The gas G 4 is guided to the adsorption tower 31B via the line 35. At the same time, in step 3, the gas G 4 from the adsorption tower 31C is introduced as a pressurized gas to the gas passage port 31b side of the adsorption tower 31B, and the inside of the adsorption tower 31B is pressurized.

在步驟4中,如第5圖所示選擇各自動閥的開閉狀態、且藉由升壓機32的作動,而達成如第8圖(d)所示的氣體流動狀態,而在吸附塔31A進行吸附步驟、在吸附塔31B進行第二升壓步驟、在吸附塔31C進行第一脫附步驟。In step 4, as shown in Fig. 5, the opening and closing state of each automatic valve is selected, and the operation of the booster 32 is performed to achieve the gas flow state as shown in Fig. 8(d), and in the adsorption tower 31A. The adsorption step is performed, the second pressure increasing step is performed in the adsorption column 31B, and the first desorption step is performed in the adsorption column 31C.

一併參照第4圖及第8圖(d)而可以更容易理解,在步驟4中,在吸附塔31A接續步驟3而進行吸附步驟,而導出精製氣體G2 。精製氣體G2 的一部分則被導引至吸附塔31B。在此同時,在步驟4中,將來自吸附塔31A的精製氣體G2 則作為升壓氣體而導入至吸附塔31B的氣體通過口31b側,而將吸附塔31B的內部升壓。在此同時,在步驟4中,將吸附塔31C的內部降壓,而將不純物從吸附塔31C內的吸附劑脫附,而從吸附塔31C的氣體通過口31a側導出氣體G5 (廢氣)。此氣體G5 是經由線36及回收線4而導入至緩衝槽10,而被貯留於緩衝槽10。Referring to Fig. 4 and Fig. 8(d) together, it can be more easily understood that in step 4, the adsorption step is carried out in the adsorption column 31A following the step 3, and the purified gas G 2 is derived. A part of the purified gas G 2 is guided to the adsorption tower 31B. At the same time, in step 4, the purified gas G 2 from the adsorption tower 31A is introduced as a pressurized gas to the gas passage port 31b side of the adsorption tower 31B, and the inside of the adsorption tower 31B is pressurized. At the same time, in step 4, the inside of the adsorption tower 31C is depressurized, and the impurities are desorbed from the adsorbent in the adsorption tower 31C, and the gas G 5 (exhaust gas) is led out from the gas passage opening 31a side of the adsorption tower 31C. . This gas G 5 is introduced into the buffer tank 10 via the line 36 and the recovery line 4, and is stored in the buffer tank 10.

在步驟5中,如第5圖所示選擇各自動閥的開閉狀態、且藉由升壓機32的作動,而達成如第8圖(e)所示的氣體流動狀態,而在吸附塔31A進行吸附步驟、在吸附塔31B進行第二升壓步驟、在吸附塔31C進行第二脫附步驟。In step 5, as shown in Fig. 5, the opening and closing state of each automatic valve is selected, and the operation of the booster 32 is performed to achieve the gas flow state as shown in Fig. 8(e), and in the adsorption tower 31A. The adsorption step is performed, the second pressure increasing step is performed in the adsorption column 31B, and the second desorption step is performed in the adsorption column 31C.

一併參照第4圖及第8圖(e)而可以更容易理解,在步驟5中,在吸附塔31A接續步驟4而進行吸附步驟,而導出精製氣體G2 。精製氣體G2 的一部分則被導引至吸附塔31B。在此同時,在步驟5中,在吸附塔31B接續步驟1而將內部升壓。在此同時,在步驟5中,接續步驟4將吸附塔31C內部降壓,而將不純物從吸附塔31C內的吸附劑進一步脫附,而從吸附塔31C的氣體通過口31a側導出氣體G6 (廢氣)。此氣體G6 是經由線36而從氣體排出端E3被排出到裝置外。Referring to Fig. 4 and Fig. 8(e) together, it can be more easily understood that in step 5, the adsorption step is carried out in the adsorption column 31A following the step 4, and the purified gas G 2 is derived. A part of the purified gas G 2 is guided to the adsorption tower 31B. At the same time, in step 5, the adsorption tower 31B is connected to step 1 to boost the inside. At the same time, in the step 5, the internal phase of the adsorption tower 31C is stepped down, and the impurities are further desorbed from the adsorbent in the adsorption tower 31C, and the gas G 6 is led out from the gas passage opening 31a side of the adsorption tower 31C. (exhaust gas). This gas G 6 is discharged from the gas discharge end E3 to the outside of the apparatus via the line 36.

在步驟1~5中,處於吸附步驟的吸附塔31A的內部的最高壓力,例如是700~800kPa(表壓(gage pressure))。步驟1的第一清潔步驟的終了時間點的吸附塔31C的內部的壓力是例如500~600kPa(表壓)(較好為以處於減壓步驟的吸附塔的內部壓力為基準,決定第一清潔步驟的終了時機)。橫跨步驟1~2的第一減壓步驟的終了時間點中的吸附塔31C的內部的壓力(第一中間壓力)是例如300~400kPa(表壓)。步驟3的第二減壓步驟的終了時間點中的吸附塔31C的內部的壓力(第二中間壓力)是例如150~200kPa(表壓)。步驟4的第一脫附步驟的終了時間點中的吸附塔31C的內部的壓力是例如70~100kPa(表壓)。步驟5的第二脫附步驟的終了時間點中的吸附塔31C的內部的壓力是例如0~30kPa(表壓)。In the steps 1 to 5, the highest pressure inside the adsorption tower 31A in the adsorption step is, for example, 700 to 800 kPa (gage pressure). The pressure inside the adsorption tower 31C at the end of the first cleaning step of the step 1 is, for example, 500 to 600 kPa (gauge pressure) (preferably, based on the internal pressure of the adsorption tower in the depressurization step, the first cleaning is determined. The end of the steps). The pressure (first intermediate pressure) inside the adsorption tower 31C in the end time point of the first decompression step of steps 1 to 2 is, for example, 300 to 400 kPa (gauge pressure). The internal pressure (second intermediate pressure) of the adsorption tower 31C in the end time point of the second decompression step of the step 3 is, for example, 150 to 200 kPa (gauge pressure). The pressure inside the adsorption tower 31C at the end of the first desorption step of the step 4 is, for example, 70 to 100 kPa (gauge pressure). The pressure inside the adsorption tower 31C at the end of the second desorption step of the step 5 is, for example, 0 to 30 kPa (gauge pressure).

在步驟6~10中,與在步驟1~5在吸附塔31A所進行者相同,在吸附塔31B中進行如第9圖所示的吸附步驟。在此同時,在步驟6~10中,與在步驟1~5在吸附塔31B所進行者相同,在吸附塔31C進行如第9圖所示的第一清潔步驟(步驟6)、第二清潔步驟(步驟7)、第一升壓步驟(步驟8)、及第二升壓步驟(步驟9、10)。在此同時,在步驟6~10中,與在步驟1~5在吸附塔31C所進行者相同,在吸附塔31A中進行第9圖所示的第一減壓步驟(步驟6、7)、第二減壓步驟(步驟8)、第一脫附步驟(步驟9)、及第二脫附步驟(步驟10)。In steps 6 to 10, the adsorption step shown in Fig. 9 is performed in the adsorption tower 31B in the same manner as in the adsorption steps 31A in steps 1 to 5. At the same time, in steps 6 to 10, as in the steps 1 to 5 in the adsorption tower 31B, the first cleaning step (step 6) and the second cleaning as shown in Fig. 9 are performed in the adsorption tower 31C. Step (step 7), first boosting step (step 8), and second boosting step (steps 9, 10). At the same time, in steps 6 to 10, the first decompression step (steps 6, 7) shown in Fig. 9 is performed in the adsorption tower 31A in the same manner as in the steps 1 to 5 in the adsorption tower 31C. A second depressurization step (step 8), a first desorption step (step 9), and a second desorption step (step 10).

在步驟11~15中,與在步驟1~5在吸附塔31A所進行者相同,在吸附塔31C中進行如第10圖所示的吸附步驟。在此同時,在步驟11~15中,與在步驟1~5在吸附塔31B所進行者相同,在吸附塔31A進行如第10圖所示的第一清潔步驟(步驟11)、第二清潔步驟(步驟12)、第一升壓步驟(步驟13)、及第二升壓步驟(步驟14、15)。在此同時,在步驟11~15中,與在步驟1~5在吸附塔31C所進行者相同,在吸附塔31B中進行第10圖所示的第一減壓步驟(步驟11、12)、第二減壓步驟(步驟13)、第一脫附步驟(步驟14)、及第二脫附步驟(步驟15)。In steps 11 to 15, the adsorption step shown in Fig. 10 is performed in the adsorption tower 31C in the same manner as in the adsorption steps 31A in steps 1 to 5. At the same time, in steps 11 to 15, the first cleaning step (step 11) and the second cleaning as shown in Fig. 10 are performed in the adsorption tower 31A in the same manner as in the steps 1 to 5 in the adsorption tower 31B. Step (step 12), a first boosting step (step 13), and a second boosting step (steps 14, 15). At the same time, in steps 11 to 15, the first decompression step (steps 11, 12) shown in Fig. 10 is performed in the adsorption tower 31B in the same manner as in the steps 1 to 5 in the adsorption tower 31C. A second depressurization step (step 13), a first desorption step (step 14), and a second desorption step (step 15).

如上,從PSA系統3或PSA裝置30,持續取出氬氣富化的精製氣體G2As described above, the argon-enriched refined gas G 2 is continuously taken out from the PSA system 3 or the PSA unit 30.

在使用氬氣精製裝置Y所進行的以上的氬氣精製方法中,在吸附塔31A、31B、31C是各自實行包含如上所述的吸附步驟、第一減壓步驟、第二減壓步驟、第一脫附步驟、第二脫附步驟、第一清潔步驟、第二清潔步驟、第一升壓步驟、及第二升壓步驟,藉此謀求作為混合氣體的氣體G1 中的氬氣的富化。氣體G1 是藉由將上述的原料氣體G0 、氣體G3 ”、及氣體G5 暫時收進緩衝槽10,而從此緩衝槽10向著用以實行PSA法的PSA系統3或PSA裝置30(包含吸附塔31A、31B、31C)所供應的氣體。即使收進緩衝槽10的原料氣體G0 的流量、壓力、組成等伴隨著變動的情況,會藉由暫時將此原料氣體G0 收進緩衝槽10而受到貯留及混合,而抑制從此緩衝槽10導出的氣體G1 的流量變動、壓力變動、組成變動等。因此,若藉由本方法,即使在氬氣的富化時使用PSA法,仍容易因應原料氣體G0 的流量變動、壓力變動、組成變動等。In the above argon gas purification method by the argon gas refining device Y, the adsorption columns 31A, 31B, and 31C are each subjected to the adsorption step, the first pressure reduction step, the second pressure reduction step, and the a desorption step, a second desorption step, a first cleaning step, a second cleaning step, a first pressure increasing step, and a second pressure increasing step, thereby purifying the argon gas in the gas G 1 as a mixed gas Chemical. The gas G 1 is temporarily taken into the buffer tank 10 by the above-mentioned raw material gas G 0 , gas G 3 ′′, and gas G 5 , and is moved from the buffer tank 10 to the PSA system 3 or the PSA device 30 for performing the PSA method ( The gas supplied from the adsorption towers 31A, 31B, and 31C) is included. Even if the flow rate, pressure, composition, and the like of the raw material gas G 0 received in the buffer tank 10 are changed, the raw material gas G 0 is temporarily collected. The buffer tank 10 is stored and mixed, and the flow rate fluctuation, the pressure fluctuation, the composition variation, and the like of the gas G 1 derived from the buffer tank 10 are suppressed. Therefore, by this method, the PSA method is used even when the argon gas is enriched. It is still easy to respond to fluctuations in the flow rate of the material gas G 0 , pressure fluctuations, composition changes, and the like.

除此之外,藉由本方法,容易達成精製氣體G2 (富化氬氣)的高產率。其理由如下。In addition to this, a high yield of the purified gas G 2 (enriched argon gas) is easily achieved by the present method. The reason is as follows.

第一,在本方法中,從處於上述的脫附步驟(第一脫附步驟、第二脫附步驟)中的吸附塔31A、31B、31C持續導出的氣體(廢氣)之中,將氬氣濃度相對較高的廢氣(氣體G5 )導入緩衝槽10,將此廢氣供作使用PSA法的再次的氬氣的富化。在吸附步驟中被吸附於吸附劑的不純物(例如二氧化碳、氮等),是在脫附步驟中從吸附劑脫附,而在此脫附步驟中,隨著塔內壓力的降低,每單位壓力的不純物脫附量就變大。因此,從處於脫附步驟的吸附塔31A、31B、31C導出的廢氣的不純物含有率,是從脫附步驟開始之後,有漸次上升的傾向,而在本方法中,此廢氣的不純物含有率夠低的期間,可進行將廢氣(氣體G5 )導入緩衝槽10的第一脫附步驟,而在廢氣的不純物含有率在一定以上的期間,則進行將廢氣(氣體G6 )排出系統外的第二脫附步驟。First, in the present method, argon gas is continuously introduced from the gas (exhaust gas) continuously derived from the adsorption towers 31A, 31B, and 31C in the above-described desorption step (first desorption step, second desorption step) The relatively high concentration exhaust gas (gas G 5 ) is introduced into the buffer tank 10, and this exhaust gas is supplied as a re-enrichment of argon gas using the PSA method. The impurities (e.g., carbon dioxide, nitrogen, etc.) adsorbed to the adsorbent in the adsorption step are desorbed from the adsorbent in the desorption step, and in the desorption step, the pressure per unit is lowered as the pressure in the column is lowered. The amount of impurity desorption is increased. Therefore, the impurity content rate of the exhaust gas derived from the adsorption towers 31A, 31B, and 31C in the desorption step tends to gradually increase from the start of the desorption step, and in the present method, the impurity content of the exhaust gas is sufficient. In the low period, the first desorption step of introducing the exhaust gas (gas G 5 ) into the buffer tank 10 may be performed, and when the impurity content of the exhaust gas is at least a certain value, the exhaust gas (gas G 6 ) is discharged outside the system. The second desorption step.

第二,在本方法中,在上述的清潔步驟(第一清潔步驟、第二清潔步驟)中從吸附塔31A、31B、31C持續導出的氣體(沖洗用氣體)之中,將氬氣濃度相對較高的沖洗用氣體(氣體G3 ”)導入緩衝槽10,將此沖洗用氣體供作使用PSA法的氬氣的富化。由於隨著清潔步驟的進行,吸附劑受到清潔化,故從處於清潔步驟的吸附塔31A、31B、31C導出的沖洗用氣體的不純物含有率,是從清潔步驟開始之後,有漸次降低的傾向。而在本方法中,是進行將沖洗用氣體(氣體G3 ’)排出系統外的第一清潔步驟,直到沖洗用氣體的不純物含有率夠低為止,而在沖洗用氣體的不純物含有率夠低之後,則進行將沖洗用氣體(氣體G3 ”)導入緩衝槽10的第二清潔步驟。Secondly, in the method, among the gases (flushing gas) continuously derived from the adsorption towers 31A, 31B, and 31C in the above-described cleaning steps (the first cleaning step and the second cleaning step), the argon gas concentration is relatively A higher flushing gas (gas G 3 ") is introduced into the buffer tank 10, and this flushing gas is supplied as an enrichment of argon gas using the PSA method. Since the adsorbent is cleaned as the cleaning step proceeds, The impurity content rate of the rinsing gas derived from the adsorption towers 31A, 31B, and 31C in the cleaning step tends to gradually decrease from the start of the cleaning step. In the present method, the rinsing gas (gas G 3 ) is performed. ') The first cleaning step outside the discharge system until the impurity content of the purge gas is sufficiently low, and after the impurity content of the purge gas is sufficiently low, the flushing gas (gas G 3 ") is introduced into the buffer. A second cleaning step of the tank 10.

如上,本發明相關的氬氣精製方法,是適用於使用PSA法而以高產率獲得高純度氬氣。As described above, the argon gas refining method according to the present invention is suitable for obtaining high-purity argon gas in a high yield using the PSA method.

在本方法中,如上所述,吸附塔31A、31B、31C的各自的減壓步驟,包含在此減壓步驟的開始到途中之中從此吸附塔導出氣體G3 的第一減壓步驟、與在該第一減壓步驟之後從此吸附塔導出氣體G4 的第二減壓步驟,並將氣體G3 作為清潔氣體而導入處於清潔步驟的其他的吸附塔、將氣體G4 導入處於第一升壓步驟的其他的吸附塔。由於從處於減壓步驟的吸附塔31A、31B、31C導出的氣體的氬氣濃度相對較高,可以利用從處於減壓步驟的吸附塔31A、31B、31C導出的氣體而在其他的吸附塔有效率地進行清潔步驟及升壓步驟。也就是若藉由本方法,可以統合性地利用分別於複數個吸附塔31A、31B、31C所進行的步驟,而可以有效率地進行用以富化氬氣的PSA法。In the present method, as described above, the respective pressure reduction steps of the adsorption columns 31A, 31B, and 31C include a first pressure reduction step of deriving the gas G 3 from the adsorption column during the start of the pressure reduction step, and After the first depressurization step, the second depressurization step of the gas G 4 is derived from the adsorption column, and the gas G 3 is introduced as a cleaning gas into the other adsorption column in the cleaning step, and the gas G 4 is introduced into the first liter. Other adsorption towers for the pressure step. Since the argon gas concentration of the gas derived from the adsorption towers 31A, 31B, and 31C in the depressurization step is relatively high, the gas derived from the adsorption towers 31A, 31B, and 31C in the depressurization step can be utilized in the other adsorption towers. The cleaning step and the boosting step are performed efficiently. That is, by the present method, the steps performed in the plurality of adsorption columns 31A, 31B, and 31C can be collectively utilized, and the PSA method for enriching argon gas can be efficiently performed.

在本方法中,以處於脫附步驟(第一脫附步驟、第二脫附步驟)的吸附塔31A、31B、31C的內部的最低壓力為0%、且以處於吸附步驟的吸附塔31A、31B、31C的內部的最高壓力為100%的情況,第一減壓步驟的終了時的吸附塔31A、31B、31C的內部的第一中間壓力為35~80%的範圍,且在第二減壓步驟的終了時的吸附塔31A、31B、31C的內部的第二中間壓力小於第一中間壓力的限制中,第二中間壓力較好為15~50%的範圍。這樣的條件,是適用於有效率地進行清潔步驟及升壓步驟。In the method, the lowest pressure inside the adsorption columns 31A, 31B, and 31C in the desorption step (the first desorption step, the second desorption step) is 0%, and the adsorption column 31A in the adsorption step, In the case where the maximum internal pressure of 31B and 31C is 100%, the first intermediate pressure inside the adsorption towers 31A, 31B, and 31C at the end of the first decompression step is in the range of 35 to 80%, and is in the second subtraction. The second intermediate pressure inside the adsorption towers 31A, 31B, and 31C at the end of the pressing step is smaller than the first intermediate pressure, and the second intermediate pressure is preferably in the range of 15 to 50%. Such conditions are suitable for efficient cleaning and boosting steps.

在本方法中,升壓步驟是如上所述,包含將從處於第二減壓步驟的吸附塔31A、31B、31C之一導出的氣體G4 導入升壓對象的吸附塔31A、31B、31C之一的第一升壓步驟、與在第一升壓步驟之後將精製氣體G2 導入此吸附塔的第二升壓步驟。這樣的二階段的升壓,由於有效率地在各吸附塔進行升壓步驟及其後的吸附步驟,故較佳。In the present method, the step of boosting is as described above, and includes introducing the gas G 4 derived from one of the adsorption columns 31A, 31B, and 31C in the second decompression step into the adsorption towers 31A, 31B, and 31C of the object to be pressurized. A first step of boosting, and a second step of boosting the refined gas G 2 into the adsorption column after the first step of boosting. Such a two-stage boosting is preferred because the pressure-increasing step and the subsequent adsorption step are efficiently performed in each adsorption column.

在本方法中,實行PSA法時,由於將處於脫附步驟(第一脫附步驟、第二脫附步驟)的吸附塔31A、31B、31C的內部降壓,故未使用真空泵。因此,吸附塔31A、31B、31C的內部的最低壓力為大氣壓以上。這樣的條件,由於從用於實行PSA法的吸附塔31A、31B、31C或PSA裝置,是可因應來自緩衝槽10的混合氣體的流量變動(也就是對於裝置的負荷變動),故較佳。In the present method, when the PSA method is carried out, since the inside of the adsorption columns 31A, 31B, and 31C in the desorption step (the first desorption step and the second desorption step) is depressurized, the vacuum pump is not used. Therefore, the lowest pressure inside the adsorption towers 31A, 31B, and 31C is equal to or higher than atmospheric pressure. Such a condition is preferable because the flow rate of the mixed gas from the buffer tank 10 (that is, the load fluctuation of the apparatus) is preferable from the adsorption towers 31A, 31B, 31C or the PSA apparatus for performing the PSA method.

本方法所使用的緩衝槽10的容積是如上所述的可變的。這樣的可變性,由於緩衝槽10可因應被收進緩衝槽10而成的原料氣體G0 、氣體G3 ”、及氣體G5 的流量變動(特別是原料氣體G0 的流動變動)、壓力變動等,故較佳。The volume of the buffer tank 10 used in the method is variable as described above. In such a variability, the flow rate of the material gas G 0 , the gas G 3 ”, and the gas G 5 which are collected by the buffer tank 10 in accordance with the buffer tank 10 (in particular, the flow fluctuation of the material gas G 0 ) and the pressure It is better to change etc.

在本發明中,從緩衝槽10向著吸附塔31A、31B、31C所供應的氣體G1 的流量,是如上所述,在吸附塔31A、31B、31C開始吸附步驟之時更新。這樣的更新,由於可減輕對於從用於實行PSA法的吸附塔或PSA裝置的負荷,故較佳。In the present invention, the flow from the adsorber 31A toward the buffer tank 10, 31B, 31C of the supplied gas G 1 is, as described above, is updated when the adsorption tower 31A, 31B, 31C of the adsorption step begins. Such an update is preferable because it can reduce the load from the adsorption tower or the PSA apparatus for carrying out the PSA method.

在本方法中,關於緩衝槽10中的貯留量,如上所述,設定上側設定量VH 及下側設定量VL ,且在氣體G1 供應流量的更新之前,取得被收進緩衝槽10的原料氣體G0 的平均流量來作為基準流量。因此在本方法中,在混合氣體的供應留量更新時,如上所述,緩衝槽10內的氣體貯留量為上側設定量VH 以上的情況,則以大於基準流量的流量來作為氣體G1 供應流量;緩衝槽10內的氣體貯留量為低於上側設定量VH 且高於下側設定量VL 的情況,以基準流量做為氣體G1 供應流量;緩衝槽10內的氣體貯留量為下側設定量VL 以下的情況,以小於基準流量的流量作為氣體G1 供應流量。這樣的手法中,在氣體G1 供應留量更新時,緩衝槽10內的氣體貯留量為上側設定量VH 以上的情況,增加混合氣體供應流量;緩衝槽10內的氣體貯留量為低於上側設定量VH 且高於下側設定量VL 的情況,不變更氣體G1 供應流量;緩衝槽10內的氣體貯留量為下側設定量VL 以下的情況,減低氣體G1 供應流量。如以上的要件,由於緩衝槽10可因應作為收進緩衝槽10而成的原料氣體G0 、氣體G3 ”、及氣體G5 的流量變動(特別是原料氣體G0 的流量變動),並減輕對於前處理系統2、用於實行PSA法的PSA裝置或吸附塔31A、31B、31C的負荷變動而謀求負荷的穩定化,故較佳。在前處理系統2的前處理所含的以上述反應式(1)所表的轉化反應及上述反應式(2)所表的轉化反應,均為發熱反應,而減輕對前處理系統2的負荷變動而對負荷的穩定化的謀求,由於是針對此發熱反應而防止過度的溫度上升並將反應溫度控制在適當範圍內,故較佳。In the present method, as described above, the upper side set amount V H and the lower side set amount V L are set as described above in the buffer tank 10, and the collected buffer tank 10 is obtained before the gas G 1 supply flow rate is updated. The average flow rate of the material gas G 0 is used as the reference flow rate. Therefore, in the present method, when the supply amount of the mixed gas is updated, as described above, when the gas storage amount in the buffer tank 10 is equal to or higher than the upper set amount V H , the flow rate larger than the reference flow rate is used as the gas G 1 . Supply flow rate; the gas storage amount in the buffer tank 10 is lower than the upper side set amount V H and higher than the lower side set amount V L , and the reference flow rate is used as the gas G 1 supply flow rate; the gas storage amount in the buffer tank 10 When the amount is less than or equal to the lower side setting amount V L , the flow rate is supplied as the gas G 1 at a flow rate smaller than the reference flow rate. In such a method, when the gas G 1 supply amount is updated, the gas storage amount in the buffer tank 10 is equal to or higher than the upper side setting amount V H , and the mixed gas supply flow rate is increased; the gas storage amount in the buffer tank 10 is lower than When the upper side setting amount V H is higher than the lower side setting amount V L , the gas G 1 supply flow rate is not changed, and the gas storage amount in the buffer tank 10 is equal to or lower than the lower side setting amount V L , and the gas G 1 supply flow rate is reduced. . According to the above requirements, the buffer tank 10 can change the flow rate of the material gas G 0 , the gas G 3 ′′, and the gas G 5 which are the intake buffer tank 10 (in particular, the flow rate variation of the material gas G 0 ), and It is preferable to reduce the load fluctuation of the PSA apparatus or the adsorption towers 31A, 31B, and 31C for performing the PSA method in the pretreatment system 2, and it is preferable to stabilize the load in the pretreatment of the pretreatment system 2. The conversion reaction represented by the reaction formula (1) and the conversion reaction shown in the above reaction formula (2) are all exothermic reactions, and the reduction of the load fluctuation of the pretreatment system 2 and the stabilization of the load are aimed at This exothermic reaction is preferred because it prevents excessive temperature rise and controls the reaction temperature within an appropriate range.

在本方法中,在將氣體G1 供應至吸附塔31A、31B、31C之前,在前處理系統2中從緩衝槽10對氣體G1 施以前處理,前處理的目的是除去或改變此氣體G1 所含的不純物的至少一部分。這樣的構成,由於可獲得高純度氬氣,故較佳。In the present method, the gas supplied to the adsorption tower G. 1 31A, 31B, 31C before, the processing gas G of from 10 applied to the buffer tank. 1 before the processing system 2 in the front, the purpose of the pretreatment is to remove or change this gas G At least a portion of the impurities contained in 1 . Such a configuration is preferable because high-purity argon gas can be obtained.

在本方法中,在前處理系統2欲對氣體G1 施以的前處理,是如上所述分成複數段(第一~第三處理)來進行。在第一處理中的上述反應式(1)所表的轉化反應、還有第二及三處理中的上述反應式(2)所表的轉化反應除去或改變混合氣體所含的不純物的至少一部分之時欲對此混合氣體所施以的前處理包含均是發熱反應,將前處理分成複數段來進行的構成,由於在此前處理中,可以防止過度的溫度上升並將反應溫度控制於適當範圍內,故較佳。In the present method, system 2 before processing gas G 1 to be applied to the front, is divided into a plurality of sections (first to third process) is performed as described above. The conversion reaction shown in the above reaction formula (1) in the first treatment, and the conversion reaction in the above reaction formula (2) in the second and third treatments remove or change at least a part of the impurities contained in the mixed gas. At this time, the pretreatment to be applied to the mixed gas includes a composition in which the pretreatment is divided into a plurality of stages, and in the previous treatment, excessive temperature rise can be prevented and the reaction temperature can be controlled to an appropriate range. It is better inside.

在本方法中,在前處理系統2之後而在將氣體G1 供應至吸附塔31A、31B、31C之前,藉由升壓機32將氣體G1 升壓。這樣的升壓,由於針對氣體G1 在前處理系統2施以前處理而適當地實行PSA法,故較佳。In the present method, then the processing system 2 is supplied in the first gas G 1 to the adsorption column 31A, 31B, 31C before, by a gas booster 32 G 1 booster. This boost, since the processing gas G 1 for the first processing system is applied before the implementation of the PSA process appropriately, it is preferred.

【實施例】[Examples]

使用第1圖至第4圖所示的氬氣精製裝置Y,而從既定的原料氣體G0 將氬氣濃縮分離。在本實施例中的原料氣體G0 ,是從矽拉晶爐排出的使用完畢的氣氛氣體,其含有作為主成分的氬氣。此原料氣體G0 的的規格,是揭露於第11圖的表格。The argon gas purification apparatus Y shown in Figs. 1 to 4 is used to concentrate and separate argon gas from a predetermined source gas G 0 . The source gas G 0 in the present embodiment is a used atmosphere gas discharged from a krypton crystal pulling furnace, and contains argon gas as a main component. The specification of the material gas G 0 is disclosed in the table of Fig. 11.

在本實施例中,在貯留系統1中,將原料氣體G0 收進緩衝槽10,並從緩衝槽10向著後段(前處理系統2、PSA系統3)持續供應氣體G1 ,而針對氣體G1 的流量,是在PSA系統3中的吸附塔31A、31B、31C的任一個開始吸附步驟時(吸附塔切換時)更新。針對氣體G1 的流量,在上述的手法中,具體而言是如下所述而更新。In the present embodiment, in reserving system 1, the raw material gas G 0 incorporated into the buffer tank 10, and (3 pretreatment system 2, PSA systems) for supplying the gas G 1 from 10 toward the rear section of the buffer tank, and for a gas G The flow rate of 1 is updated when any one of the adsorption towers 31A, 31B, and 31C in the PSA system 3 starts the adsorption step (when the adsorption tower is switched). The flow rate of the gas G 1 is specifically updated as described below in the above-described method.

首先,針對以流量計13來計測的原料氣體G0 的流量,求得吸附塔31A、31B、31C的其中之一在吸附步驟的開始之時(吸附塔切換時)為止的10秒間的平均流量,來作為基準流量。接下來,換算為所求得的平均流量(基準流量)相對於流量控制部16的流量控制範圍之0~400Nm3 /h的比例(α%)。利用此比例(α%),計算出針對氣體G1 之下次應設定的流量。具體而言,吸附塔切換時藉由貯留量檢測計14所計測的緩衝槽10的氣體貯留量是針對緩衝槽10所設定的上側設定值120m3 以上的情況中,在α%加上5%,而計算出流量控制部16的流量控制範圍之0~400Nm3 /h的(α+5)%的流量,而採用此計算出的流量來作為氣體G1 的下一個流量。吸附塔切換時藉由貯留量檢測計14所計測的緩衝槽10的氣體貯留量為上述的下側設定值40m3 以下的情況中,從α%減去5%,而計算出流量控制部16的流量控制範圍之0~400Nm3 /h的(α-5)%的流量,而採用此計算出的流量來作為氣體G1 的下一個流量。另外,吸附塔切換時藉由貯留量檢測計14所計測的緩衝槽10的氣體貯留量為低於上側設定值120m3 且高於下側設定值40m3 的情況中,則計算出流量控制部16的流量控制範圍之0~400Nm3 /h的α%的流量,而採用此計算出的流量來作為氣體G1 的下一個流量。針對氣體G1 的如上述更新的流量,是維持到下一次的吸附塔切換為止。First, the average flow rate of one of the adsorption towers 31A, 31B, and 31C at the start of the adsorption step (when the adsorption tower is switched) is determined for the flow rate of the material gas G 0 measured by the flow meter 13 , as a benchmark traffic. Next, it is converted into a ratio (α%) of the average flow rate (reference flow rate) obtained with respect to the flow rate control range of the flow rate control unit 10 of 0 to 400 Nm 3 /h. Using this ratio (α%), the flow rate to be set next for the gas G 1 is calculated. Specifically, in the case where the gas storage amount of the buffer tank 10 measured by the storage amount detector 14 at the time of the adsorption tower switching is the upper setting value of 120 m 3 or more set for the buffer tank 10, 5% is added in α%. On the other hand, the flow rate of (α + 5)% of 0 to 400 Nm 3 /h of the flow rate control range of the flow rate control unit 16 is calculated, and the calculated flow rate is used as the next flow rate of the gas G 1 . In the case where the gas storage amount of the buffer tank 10 measured by the storage amount detector 14 is less than or equal to 40 m 3 of the lower side set value described above, the flow rate control unit 16 is calculated by subtracting 5% from α%. The flow control range is 0 to 400 Nm 3 /h (α - 5)% of the flow rate, and the calculated flow rate is used as the next flow rate of the gas G 1 . In the case where the gas storage amount of the buffer tank 10 measured by the storage amount detector 14 at the time of the adsorption tower switching is lower than the upper set value 120 m 3 and higher than the lower set value 40 m 3 , the flow rate control unit is calculated. The flow control range of 16 is 0% to 400 Nm 3 /h of the flow rate of α%, and the calculated flow rate is used as the next flow rate of the gas G 1 . As for the flow rate of the gas G 1 is updated, it is maintained until the next adsorption Taqie change so far.

在本實施例中,是在前處理系統2中,以以下的條件對氣體G1 進行前處理。使用鉑-鈀系觸媒來作為前處理槽20A內的觸媒。針對導入至前處理槽20A之前的氣體G1 ,是將溫度調節為130℃,添加既定量的氫而使氫濃度得以在經過後段的前處理槽20B、20C之後成為0.5vol%,並添加相對於一氧化碳為既定的過剩量的氧,而使得在前處理槽20A充分地除去一氧化碳。使用鉑系觸媒作為前處理槽20B內的觸媒。針對導入至前處理槽20B之前的氣體G1 ,是將溫度調節為50℃,以氫濃度得以在經過後段的前處理槽20C之後成為0.5vol%為限度,添加既定量的氧,而在前處理槽20B除去一部分的氫。使用鉑系觸媒作為前處理槽20C內的觸媒。針對導入至前處理槽20C之前的氣體G1 ,是將溫度調節為50℃,添加既定量的氧,而使氫濃度在經過後段的前處理槽20C之後成為0.5vol%。在前處理槽20C之後的冷卻器22C中,將氣體G1 冷卻至30~40℃。In the present embodiment, the processing system 2 is the front, to the following conditions of the pretreatment gas G 1. A platinum-palladium catalyst was used as a catalyst in the pretreatment tank 20A. With respect to the gas G 1 before being introduced into the pretreatment tank 20A, the temperature is adjusted to 130 ° C, and a predetermined amount of hydrogen is added so that the hydrogen concentration becomes 0.5 vol% after passing through the pretreatment tanks 20B and 20C in the subsequent stage, and the relative amount is added. The carbon monoxide is a predetermined excess amount of oxygen, so that the carbon monoxide is sufficiently removed in the pretreatment tank 20A. A platinum-based catalyst is used as a catalyst in the pretreatment tank 20B. With respect to the gas G 1 before being introduced into the pretreatment tank 20B, the temperature is adjusted to 50 ° C, and the hydrogen concentration is limited to 0.5 vol% after passing through the pretreatment tank 20C in the subsequent stage, and a predetermined amount of oxygen is added. The treatment tank 20B removes a part of hydrogen. A platinum-based catalyst is used as a catalyst in the pretreatment tank 20C. With respect to the gas G 1 before being introduced into the pretreatment tank 20C, the temperature was adjusted to 50 ° C, and a predetermined amount of oxygen was added, and the hydrogen concentration was 0.5 vol% after passing through the pretreatment tank 20C in the subsequent stage. In the cooler 22C after the pretreatment tank 20C, the gas G 1 is cooled to 30 to 40 °C.

在本實施例中,是在PSA系統3或PSA裝置30中,如第8圖至第10圖所示在吸附塔31A、31B、31C中重複由吸附步驟、第一減壓步驟、第二減壓步驟、第一脫附步驟、第二脫附步驟、第一清潔步驟、第二清潔步驟、第一升壓步驟、及第二升壓步驟所構成的一個循環。在本實施例中所使用的PSA裝置30的吸附塔31A、31B、31C是各自具有圓筒形狀(內徑800mm、高度3500mm)。在各吸附塔內,層積並充填既定量的CMS、既定量的ZMS、既定量的氧化鋁,來作為吸附劑。另外在本實施例中,在吸附塔31A、31B、31C的各自之中,吸附步驟是進行330秒、第一減壓步驟是進行120秒、第二減壓步驟是進行30秒、第一脫附步驟是進行60秒、第二脫附步驟是進行120秒、第一清潔步驟是進行70秒、第二清潔步驟是進行50秒、第一升壓步驟是進行30秒、及第二升壓步驟是進行180秒。以吸附步驟中的吸附塔31A、31B、31C的內部的最高壓力為800kPa(表壓),而以脫附步驟(第一脫附步驟、第二脫附步驟)中的吸附塔10A、10B、10C的內部的最低壓力為大氣壓。另外,以第一減壓步驟的終了時間點中的吸附塔31A、31B、31C的內部的壓力(第一中間壓力)為400kPa(表壓),並以第二減壓步驟的終了時間點中的吸附塔31A、31B、31C的內部的壓力(第二中間壓力)是200kPa(表壓)。In the present embodiment, in the PSA system 3 or the PSA device 30, as shown in FIGS. 8 to 10, the adsorption step, the first decompression step, and the second reduction are repeated in the adsorption towers 31A, 31B, and 31C. One cycle consisting of a pressing step, a first desorption step, a second desorption step, a first cleaning step, a second cleaning step, a first step of increasing pressure, and a second step of increasing pressure. The adsorption towers 31A, 31B, and 31C of the PSA apparatus 30 used in the present embodiment each have a cylindrical shape (inner diameter: 800 mm, height: 3,500 mm). In each adsorption column, a predetermined amount of CMS, a predetermined amount of ZMS, and a predetermined amount of alumina are stacked and filled as an adsorbent. Further, in the present embodiment, among the adsorption towers 31A, 31B, and 31C, the adsorption step is performed for 330 seconds, the first depressurization step is performed for 120 seconds, and the second decompression step is performed for 30 seconds, and the first desorption step is performed for 30 seconds. The attaching step is 60 seconds, the second desorption step is 120 seconds, the first cleaning step is 70 seconds, the second cleaning step is 50 seconds, the first step is 30 seconds, and the second step is The step is to perform 180 seconds. The highest pressure inside the adsorption towers 31A, 31B, 31C in the adsorption step is 800 kPa (gauge pressure), and the adsorption towers 10A, 10B in the desorption step (first desorption step, second desorption step), The minimum internal pressure of 10C is atmospheric pressure. Further, the internal pressure (first intermediate pressure) of the adsorption towers 31A, 31B, and 31C in the end time point of the first depressurization step is 400 kPa (gauge pressure), and is at the end time point of the second decompression step. The internal pressure (second intermediate pressure) of the adsorption towers 31A, 31B, and 31C is 200 kPa (gauge pressure).

針對進行這樣的條件的本實施例中所取得的精製氣體G2 ,氬氣純度為99.5vol%、氫濃度為0.5vol%,而氬氣回收率為約70%。取得的精製氣體G2 的規格是揭露於第11圖的表格。The purified gas G 2 obtained in the present example subjected to such a condition had an argon purity of 99.5 vol%, a hydrogen concentration of 0.5 vol%, and an argon recovery rate of about 70%. The specifications of the obtained purified gas G 2 are disclosed in the table of Fig. 11.

1...貯留系統1. . . Storage system

2...前處理系統2. . . Pretreatment system

3...PSA系統3. . . PSA system

4...回收線4. . . Recycling line

4a...自動閥4a. . . Automatic valve

10...貯留槽10. . . Storage tank

11...除塵器11. . . dust collector

12...升壓吹風器12. . . Booster blower

13...流量計13. . . Flow meter

14...貯留量檢測計14. . . Storage meter

15...濃度分析計15. . . Concentration analyzer

16...流量控制部16. . . Flow control department

17...線17. . . line

20A...前處理槽20A. . . Pretreatment tank

20a...入口端20a. . . Entrance end

20B...前處理槽20B. . . Pretreatment tank

20b...出口端20b. . . Exit end

20C...前處理槽20C. . . Pretreatment tank

21...預熱器twenty one. . . Preheater

22A...冷卻器22A. . . Cooler

22B...冷卻器22B. . . Cooler

22C...冷卻器22C. . . Cooler

23...氫供應量控制部twenty three. . . Hydrogen supply control department

24A...氫供應量控制部24A. . . Hydrogen supply control department

24B...氧供應量控制部24B. . . Oxygen supply control department

24C...氧供應量控制部24C. . . Oxygen supply control department

25A...溫度計25A. . . thermometer

25B...溫度計25B. . . thermometer

25C...溫度計25C. . . thermometer

26A...流量控制部26A. . . Flow control department

26B...流量控制部26B. . . Flow control department

27...氫濃度分析計27. . . Hydrogen concentration analyzer

28A...線28A. . . line

28B...線28B. . . line

28b...旁通線28b. . . Bypass line

28C...線28C. . . line

28c...旁通線28c. . . Bypass line

28D...線28D. . . line

30...PSA裝置30. . . PSA device

31A...吸附塔31A. . . Adsorption tower

31a...氣體通過口31a. . . Gas passage

31B...吸附塔31B. . . Adsorption tower

31b...氣體通過口31b. . . Gas passage

31C...吸附塔31C. . . Adsorption tower

32...升壓機32. . . Booster

32a...氣體吸入口32a. . . Gas suction

32b...氣體送出口32b. . . Gas outlet

33...線33. . . line

33’...主幹路33’. . . Main road

33A...分支路33A. . . Branch road

33a...自動閥33a. . . Automatic valve

33B...分支路33B. . . Branch road

33b...自動閥33b. . . Automatic valve

33C...分支路33C. . . Branch road

33c...自動閥33c. . . Automatic valve

34...線34. . . line

34’...主幹路34’. . . Main road

34A...分支路34A. . . Branch road

34a...自動閥34a. . . Automatic valve

34B...分支路34B. . . Branch road

34b...自動閥34b. . . Automatic valve

34C...分支路34C. . . Branch road

34c...自動閥34c. . . Automatic valve

35...線35. . . line

35’...主幹路35’. . . Main road

35A...分支路35A. . . Branch road

35a...自動閥35a. . . Automatic valve

35B...分支路35B. . . Branch road

35b...自動閥35b. . . Automatic valve

35C...分支路35C. . . Branch road

35c...自動閥35c. . . Automatic valve

36...線36. . . line

36’...主幹路36’. . . Main road

36A...分支路36A. . . Branch road

36a...自動閥36a. . . Automatic valve

36B...分支路36B. . . Branch road

36b...自動閥36b. . . Automatic valve

36C...分支路36C. . . Branch road

36c...自動閥36c. . . Automatic valve

36d...自動閥36d. . . Automatic valve

E1...原料氣體導入端E1. . . Raw material gas introduction end

E2...精製氣體導出端E2. . . Refined gas outlet

E3...氣體排出端E3. . . Gas discharge end

G0...原料氣體G0. . . Raw material gas

G1...氣體G1. . . gas

G2...精製氣體G2. . . Refined gas

G3...氣體G3. . . gas

G3’...氣體G3’. . . gas

G3”...氣體G3"...gas

G4...氣體G4. . . gas

G5...氣體G5. . . gas

G6...氣體G6. . . gas

VH ...上側設定值V H . . . Upper set value

VL ...下側設定值V L . . . Lower set value

Y...氬氣精製裝置Y. . . Argon refining device

第1圖是顯示本發明相關的氬氣精製裝置的全體概略結構。Fig. 1 is a view showing the overall schematic configuration of an argon gas purifying apparatus according to the present invention.

第2圖是顯示作為第1圖所示的氬氣精製裝置的一部分之氬氣精製裝置的貯留系統的結構。Fig. 2 is a view showing the configuration of a storage system of an argon gas purifying apparatus which is a part of the argon gas purifying apparatus shown in Fig. 1.

第3圖是顯示作為第1圖所示的氬氣精製裝置的一部分之氬氣精製裝置的前處理系統的結構。Fig. 3 is a view showing the configuration of a pretreatment system of an argon gas purifying apparatus which is a part of the argon gas purifying apparatus shown in Fig. 1.

第4圖是顯示作為第1圖所示的氬氣精製裝置的一部分之氬氣精製裝置的PSA系統的結構。Fig. 4 is a view showing the configuration of a PSA system of an argon gas purifying apparatus which is a part of the argon gas purifying apparatus shown in Fig. 1.

第5圖是一表格,顯示關於實行第4圖所示的PSA裝置的PSA法的步驟1~5之在各吸附塔所進行的步驟、還有第4圖所示的PSA裝置的各自動閥及回收線的自動閥的開閉狀態。Fig. 5 is a table showing the steps performed in the adsorption towers of steps 1 to 5 of the PSA method for carrying out the PSA apparatus shown in Fig. 4, and the automatic valves of the PSA apparatus shown in Fig. 4; And the opening and closing state of the automatic valve of the recovery line.

第6圖是一表格,顯示關於實行第4圖所示的PSA裝置的PSA法的步驟6~10之在各吸附塔所進行的步驟、還有第4圖所示的PSA裝置的各自動閥及回收線的自動閥的開閉狀態。Fig. 6 is a table showing the steps performed in the adsorption towers of steps 6 to 10 of the PSA method for carrying out the PSA apparatus shown in Fig. 4, and the automatic valves of the PSA apparatus shown in Fig. 4; And the opening and closing state of the automatic valve of the recovery line.

第7圖是一表格,顯示關於實行第4圖所示的PSA裝置的PSA法的步驟11~15之在各吸附塔所進行的步驟、還有第4圖所示的PSA裝置的各自動閥及回收線的自動閥的開閉狀態。Figure 7 is a table showing the steps performed in the adsorption towers of steps 11 to 15 of the PSA method for carrying out the PSA apparatus shown in Fig. 4, and the automatic valves of the PSA apparatus shown in Fig. 4. And the opening and closing state of the automatic valve of the recovery line.

第8圖(a)~(e)是顯示實行第4圖所示的PSA裝置的PSA法的步驟1~5中的氣體流動狀態。Fig. 8 (a) to (e) show gas flow states in steps 1 to 5 of the PSA method for carrying out the PSA apparatus shown in Fig. 4.

第9圖(a)~(e)是顯示實行第4圖所示的PSA裝置的PSA法的步驟6~10中的氣體流動狀態。Fig. 9 (a) to (e) show gas flow states in steps 6 to 10 of the PSA method for carrying out the PSA apparatus shown in Fig. 4.

第10圖(a)~(e)是顯示實行第4圖所示的PSA裝置的PSA法的步驟11~15中的氣體流動狀態。Fig. 10 (a) to (e) show gas flow states in steps 11 to 15 of the PSA method for carrying out the PSA apparatus shown in Fig. 4.

第11圖是一整理表,顯示實施例中的原料氣體及精製氣體的規格。Fig. 11 is a table showing the specifications of the material gas and the refined gas in the examples.

1...貯留系統1. . . Storage system

2...前處理系統2. . . Pretreatment system

3...PSA系統3. . . PSA system

4...回收線4. . . Recycling line

10...貯留槽10. . . Storage tank

11...除塵器11. . . dust collector

12...升壓吹風器12. . . Booster blower

13...流量計13. . . Flow meter

14...貯留量檢測計14. . . Storage meter

15...濃度分析計15. . . Concentration analyzer

16...流量控制部16. . . Flow control department

17...線17. . . line

20A...前處理槽20A. . . Pretreatment tank

20B...前處理槽20B. . . Pretreatment tank

20C...前處理槽20C. . . Pretreatment tank

21...預熱器twenty one. . . Preheater

22A...冷卻器22A. . . Cooler

22B...冷卻器22B. . . Cooler

22C...冷卻器22C. . . Cooler

23...氫供應量控制部twenty three. . . Hydrogen supply control department

24A...氫供應量控制部24A. . . Hydrogen supply control department

24B...氧供應量控制部24B. . . Oxygen supply control department

24C...氧供應量控制部24C. . . Oxygen supply control department

25A...溫度計25A. . . thermometer

25B...溫度計25B. . . thermometer

25C...溫度計25C. . . thermometer

26A...流量控制部26A. . . Flow control department

26B...流量控制部26B. . . Flow control department

27...氫濃度分析計27. . . Hydrogen concentration analyzer

28A...線28A. . . line

28B...線28B. . . line

28b...旁通線28b. . . Bypass line

28C...線28C. . . line

28c...旁通線28c. . . Bypass line

28D...線28D. . . line

31A...吸附塔31A. . . Adsorption tower

31B...吸附塔31B. . . Adsorption tower

31C...吸附塔31C. . . Adsorption tower

32...升壓機32. . . Booster

33...線33. . . line

34...線34. . . line

35...線35. . . line

36...線36. . . line

E1...原料氣體導入端E1. . . Raw material gas introduction end

G0...原料氣體G0. . . Raw material gas

G1...氣體G1. . . gas

G2...精製氣體G2. . . Refined gas

G3’...氣體G3’. . . gas

G3”...氣體G3"...gas

G5...氣體G5. . . gas

G6...氣體G6. . . gas

Y...氬氣精製裝置Y. . . Argon refining device

Claims (18)

一種氬氣精製方法,包含:將含氬氣的混合氣體收進貯留槽;從該貯留槽向著已充填吸附劑的複數個吸附塔中的受到選擇的吸附塔供應該混合氣體;以及在上述複數個吸附塔中,各自重複進行含下列步驟的循環:吸附(adsorption)步驟,在吸附塔為相對高壓的狀態下,將該混合氣體導入此吸附塔,而使該吸附劑吸附該混合氣體中的不純物,且將氬氣富化的精製氣體從此吸附塔導出;減壓步驟,將吸附塔內降壓而從此吸附塔將氣體導出;脫附(desorption)步驟,使吸附塔內降壓而從該吸附劑脫附上述不純物,且從此吸附塔導出氣體;清潔步驟,將清潔氣體導入吸附塔、且從此吸附塔導出氣體;及升壓步驟,使吸附塔內的壓力上升;其中該清潔步驟的該清潔氣體是從處於該減壓步驟的吸附塔導出的氣體;以及該清潔步驟包含從處於該清潔步驟的吸附塔導出第一排放氣體並排出到外部的第一清潔步驟、與從處於此清潔步驟的吸附塔導出第二排放氣體之該第一清潔步驟後的第二清潔步驟,並將該第二排放氣體導入該貯留槽。 An argon gas refining method comprising: charging a mixed gas containing argon gas into a storage tank; supplying the mixed gas from the storage tank to a selected adsorption tower in a plurality of adsorption towers filled with the adsorbent; In each of the adsorption towers, a cycle comprising the following steps is repeated: an adsorption step, wherein the mixed gas is introduced into the adsorption tower while the adsorption tower is at a relatively high pressure, and the adsorbent is adsorbed in the mixed gas. Impure, and argon-enriched refined gas is withdrawn from the adsorption tower; in a depressurization step, the adsorption tower is depressurized and the gas is led out from the adsorption tower; a desorption step is performed to depressurize the adsorption tower from the The adsorbent desorbs the above impurities, and derives a gas from the adsorption tower; a cleaning step of introducing a cleaning gas into the adsorption tower and deriving a gas from the adsorption tower; and a step of increasing the pressure in the adsorption tower; wherein the cleaning step The cleaning gas is a gas derived from the adsorption column in the depressurization step; and the cleaning step includes deriving the first from the adsorption column in the cleaning step a first cleaning step of discharging the gas to the outside, a second cleaning step after the first cleaning step of deriving the second exhaust gas from the adsorption tower in the cleaning step, and introducing the second exhaust gas into the storage tank . 如申請專利範圍第1項所述之氬氣精製方法,其中 該脫附步驟包含從處於該脫附步驟的吸附塔導出第一脫附氣體而導入上述貯留槽的第一脫附步驟、與在該第一脫附步驟之後從處於此脫附步驟的吸附塔導出第二脫附氣體並排出到外部的第二脫附步驟。 An argon gas refining method as described in claim 1, wherein The desorption step includes a first desorption step of introducing the first desorbed gas from the adsorption column in the desorption step into the storage tank, and an adsorption column from the desorption step after the first desorption step A second desorption step of deriving the second desorbed gas and discharging it to the outside. 如申請專利範圍第2項所述之氬氣精製方法,其中該減壓步驟包含從處於該減壓步驟的吸附塔導出第一減壓氣體作為該清潔氣體而導入處於上述清潔步驟的吸附塔的第一減壓步驟、與在該第一減壓步驟之後從處於此減壓步驟的吸附塔導出第二減壓氣體而導入處於該升壓步驟的吸附塔。 The argon gas refining method according to claim 2, wherein the depressurizing step comprises deriving a first decompressed gas from the adsorption tower in the depressurizing step as the cleaning gas to be introduced into the adsorption tower in the cleaning step. The first depressurization step and the second decompressing gas are taken out from the adsorption column in the depressurization step after the first depressurization step, and introduced into the adsorption column in the step of increasing the pressure. 如申請專利範圍第3項所述之氬氣精製方法,其中以處於該脫附步驟的吸附塔的內部的最低壓力為0%、且以處於該吸附步驟的吸附塔的內部的最高壓力為100%的情況,該第一減壓步驟的終了時的吸附塔的內部的第一中間壓力為35~80%的範圍,且在該第二減壓步驟的終了時的吸附塔的內部的第二中間壓力小於該第一中間壓力的限制中,該第二中間壓力為15~50%的範圍。 The argon gas refining method according to claim 3, wherein the lowest pressure inside the adsorption column in the desorption step is 0%, and the highest pressure in the interior of the adsorption column in the adsorption step is 100. In the case of %, the first intermediate pressure inside the adsorption tower at the end of the first depressurization step is in the range of 35 to 80%, and the second inside of the adsorption tower at the end of the second decompression step The intermediate pressure is less than the limit of the first intermediate pressure, and the second intermediate pressure is in the range of 15 to 50%. 如申請專利範圍第4項所述之氬氣精製方法,其中該升壓步驟包含將從處於該第二減壓步驟的吸附塔導出的第二減壓氣體導入升壓對象的吸附塔的第一升壓步驟、與在該第一升壓步驟之後將該精製氣體導入此吸附塔的第二升壓步驟。 The argon gas refining method according to claim 4, wherein the step of boosting comprises first introducing a second decompressed gas derived from the adsorption tower in the second decompression step into an adsorption tower of a pressure-boosting target The step of boosting and the second step of boosting the refined gas into the adsorption column after the first step of boosting. 如申請專利範圍第1~5項任一項所述之氬氣精製方法,其中處於該脫附步驟的吸附塔的內部的最低壓力為大 氣壓以上。 The argon gas refining method according to any one of claims 1 to 5, wherein a minimum pressure inside the adsorption tower in the desorption step is large Above the air pressure. 如申請專利範圍第1~5項任一項所述之氬氣精製方法,其中從該貯留槽向著上述吸附塔所供應的該混合氣體的流量,是在上述吸附塔開始該吸附步驟之時更新。 The argon gas purification method according to any one of claims 1 to 5, wherein a flow rate of the mixed gas supplied from the storage tank toward the adsorption tower is updated when the adsorption tower starts the adsorption step . 如申請專利範圍第7項所述之氬氣精製方法,其中:關於該貯留槽中的貯留量,設定上側設定量及小於此上側設定量的下側設定量;以及在混合氣體的供應流量更新時:該貯留槽內的該混合氣體的貯留量為該上側設定量以上的情況,增加混合氣體供應流量;該貯留槽內的該混合氣體的貯留量為低於該上側設定量且高於該下側設定量的情況,不變更混合氣體供應流量;及該貯留槽內的該混合氣體的貯留量為該下側設定量以下的情況,減低該混合氣體供應流量。 The argon gas refining method according to claim 7, wherein: the upper side setting amount and the lower side setting amount smaller than the upper side setting amount are set with respect to the storage amount in the storage tank; and the supply flow rate of the mixed gas is updated. When the storage amount of the mixed gas in the storage tank is equal to or greater than the upper side setting amount, increasing the mixed gas supply flow rate; the storage amount of the mixed gas in the storage tank is lower than the upper side setting amount and higher than the In the case of the lower side setting amount, the mixed gas supply flow rate is not changed; and the storage amount of the mixed gas in the storage tank is equal to or less than the lower side set amount, and the mixed gas supply flow rate is reduced. 如申請專利範圍第7項所述之氬氣精製方法,其中:關於該貯留槽中的貯留量,設定上側設定量及小於此上側設定量的下側設定量;在混合氣體供應流量的更新時之前,取得被收進該貯留槽的該混合氣體的流量來作為基準流量;以及在混合氣體的供應流量更新時:該貯留槽內的該混合氣體的貯留量為該上側設定量以上的情況,以大於該基準流量的流量為混合氣體供應流量;該貯留槽內的該混合氣體的貯留量為低於該上側設定 量且高於該下側設定量的情況,以該基準流量為混合氣體供應流量;及該貯留槽內的該混合氣體的貯留量為該下側設定量以下的情況,以小於該基準流量的流量為混合氣體供應流量。 The argon gas refining method according to claim 7, wherein: the upper side setting amount and the lower side setting amount smaller than the upper side setting amount are set with respect to the storage amount in the storage tank; when the mixed gas supply flow rate is updated Previously, the flow rate of the mixed gas collected in the storage tank is obtained as a reference flow rate; and when the supply flow rate of the mixed gas is updated, the storage amount of the mixed gas in the storage tank is equal to or greater than the upper set amount. The flow rate greater than the reference flow rate is the mixed gas supply flow rate; the storage amount of the mixed gas in the storage tank is lower than the upper side setting When the amount is higher than the lower side setting amount, the reference flow rate is the mixed gas supply flow rate; and the storage amount of the mixed gas in the storage tank is equal to or less than the lower side set amount, and is smaller than the reference flow rate. The flow rate is the mixed gas supply flow. 如申請專利範圍第1~5項任一項所述之氬氣精製方法,其中在將該混合氣體供應至該吸附塔之前,從該貯留槽對該混合氣體施以前處理,該前處理的目的是除去或改變此混合氣體所含的不純物的至少一部分。 The argon gas refining method according to any one of claims 1 to 5, wherein, before the mixed gas is supplied to the adsorption tower, the mixed gas is pretreated from the storage tank, and the purpose of the pretreatment is It is to remove or change at least a part of the impurities contained in the mixed gas. 如申請專利範圍第10項所述之氬氣精製方法,其中該前處理是分成複數段來進行。 The argon gas refining method according to claim 10, wherein the pretreatment is carried out in a plurality of stages. 如申請專利範圍第11項所述之氬氣精製方法,其中該混合氣體除了含氬氣之外,還至少含一氧化碳及氫;該前處理是包含使一氧化碳與氧反應而產生二氧化碳的第一處理、與在該第一處理之後所進行之使氫與氧反應而產生水的第二處理。 The argon gas refining method according to claim 11, wherein the mixed gas contains at least carbon monoxide and hydrogen in addition to argon; the pretreatment comprises a first treatment for reacting carbon monoxide with oxygen to generate carbon dioxide. And a second treatment of reacting hydrogen with oxygen to generate water after the first treatment. 一種氬氣精製裝置,包含:一吸附塔,其具有一第一氣體通過口與一第二氣體通過口,在此第一及第二氣體通過口之間充填有吸附劑;一貯留槽,用以在將含氬氣的混合氣體供應至該吸附塔之前,貯留該混合氣體;一第一線,連結該貯留槽及該吸附塔之間,而得以將該混合氣體從該貯留槽供應至該吸附塔的該第一氣體通過口側; 一第二線,其連接該吸附塔的該第一氣體通過口側且具有一排氣端;以及一第三線,連結該第二線及該貯留槽。 An argon gas refining device comprising: an adsorption tower having a first gas passage opening and a second gas passage opening, wherein the first and second gas passage openings are filled with an adsorbent; and a storage tank is used Preserving the mixed gas before supplying the mixed gas containing argon gas to the adsorption tower; a first line connecting the storage tank and the adsorption tower to supply the mixed gas from the storage tank to the The first gas of the adsorption tower passes through the mouth side; a second line connecting the first gas passage opening side of the adsorption tower and having an exhaust end; and a third line connecting the second line and the storage tank. 一種氬氣精製裝置,包含:複數個吸附塔,其具有一第一氣體通過口與一第二氣體通過口,在此第一及第二氣體通過口之間充填有吸附劑;一貯留槽,用以在將含氬氣的混合氣體供應至該些吸附塔之前,貯留該混合氣體;一第一線,連結該貯留槽及上述各吸附塔之間,而得以將該混合氣體從該貯留槽供應至各吸附塔的該第一氣體通過口側;一第二線,其包含具有一排氣端的主幹路、及設置於上述每個吸附塔而連接各該吸附塔的該第一氣體通過口側的複數個分支路;一第三線,其包含主幹路、及設置於上述每個吸附塔而連接各該吸附塔的該第二氣體通過口側的複數個分支路;以及一第四線,連結該第二線及該貯留槽。 An argon gas refining device comprising: a plurality of adsorption towers having a first gas passage opening and a second gas passage opening, wherein the first and second gas passage openings are filled with an adsorbent; a storage tank, And a first line connecting the storage tank and the adsorption towers to obtain the mixed gas from the storage tank before supplying the mixed gas containing argon gas to the adsorption towers; The first gas supplied to each adsorption tower passes through the port side; a second line includes a main road having an exhaust end, and the first gas passage port provided in each of the adsorption towers to connect the adsorption towers a plurality of branch roads on the side; a third line comprising a trunk road, and a plurality of branch roads disposed on each of the adsorption towers connected to the second gas passage side of each of the adsorption towers; and a fourth line The second line and the storage tank are connected. 如申請專利範圍第14項所述之氬氣精製裝置,更包含用以檢測該貯留槽中的貯留量的裝置、用以檢測供應至該貯留槽的混合氣體的流量的裝置、與用以控制從該貯留槽向著該些吸附塔供應的該混合氣體的流量的裝置。 The argon gas refining device according to claim 14, further comprising: means for detecting the storage amount in the storage tank, means for detecting the flow rate of the mixed gas supplied to the storage tank, and for controlling A device for the flow rate of the mixed gas supplied from the storage tank toward the adsorption towers. 如申請專利範圍第14或15項所述之氬氣精製裝置,其中用以實行一前處理的前處理系統是設於該第一 線,該前處理的目的是除去或改變此混合氣體所含的不純物的至少一部分。 An argon gas refining device according to claim 14 or 15, wherein a pretreatment system for performing a pretreatment is provided at the first The purpose of the pretreatment is to remove or change at least a portion of the impurities contained in the mixed gas. 如申請專利範圍第16項所述之氬氣精製裝置,其中該前處理系統包含用以將該前處理分成複數段來進行的複數個處理槽。 The argon gas refining apparatus of claim 16, wherein the pretreatment system comprises a plurality of processing tanks for dividing the pretreatment into a plurality of stages. 如申請專利範圍第17項所述之氬氣精製裝置,其中該混合氣體除了含氬氣之外,還至少含一氧化碳及氫;該前處理系統包含一第一處理槽與一第二處理槽,該第一處理槽是用以實行使一氧化碳與氧反應而產生二氧化碳的第一處理,該第二處理槽是用以在該第一處理之後實行使氫與氧反應而產生水的第二處理。 The argon gas refining device according to claim 17, wherein the mixed gas contains at least carbon monoxide and hydrogen in addition to the argon gas; the pretreatment system comprises a first treatment tank and a second treatment tank. The first treatment tank is for performing a first treatment for reacting carbon monoxide with oxygen to generate carbon dioxide, and the second treatment tank is for performing a second treatment of reacting hydrogen with oxygen to generate water after the first treatment.
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