TWI412891B - Method for photo-curing contact printing micro/nano patterns - Google Patents

Method for photo-curing contact printing micro/nano patterns Download PDF

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TWI412891B
TWI412891B TW98137453A TW98137453A TWI412891B TW I412891 B TWI412891 B TW I412891B TW 98137453 A TW98137453 A TW 98137453A TW 98137453 A TW98137453 A TW 98137453A TW I412891 B TWI412891 B TW I412891B
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Taiwan
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material layer
photocurable
micro
pattern according
transfer method
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TW98137453A
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Chinese (zh)
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TW201116938A (en
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Yungchun Lee
Chunhung Chen
Chengyu Chiu
Yita Hsieh
Chinching Hsu
Chungyi Lee
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Univ Nat Cheng Kung
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Abstract

A method for photo-curing contact printing micro/nano patterns is described. The method includes the following steps. A mold is provided, wherein a surface of the mold includes a pattern structure including at least one convex portion and at least one concave portion. A print material layer is formed to at least dispose on the convex portion. A substrate is provided, wherein a photosensitive solidification material layer is formed on a surface of the substrate. The print material layer on the convex portion is pressed on the photosensitive solidification material layer. An illumination step is performed on the photosensitive solidification material layer to solidify the photosensitive solidification material layer and to fix the print material layer on the convex portion into the photosensitive solidification material layer. The mold is removed. A patterning step is performed on the photosensitive solidification material layer by using the print material layer as a mask until a portion of the surface of the substrate is exposed.

Description

光固化式微奈米圖案之接觸轉印方法Contact curing method of light curing micro-nano pattern

本發明是有關於一種轉印方法,且特別是有關於一種光固化式微奈米圖案之接觸轉印方法。The present invention relates to a transfer method, and more particularly to a contact transfer method for a photocurable micro-nano pattern.

在目前的接觸式微奈米圖案轉印技術中,通常係先將模仁之圖案結構凸出部上的轉印材料層壓合在基板之表面上。接著,加熱轉印材料層,而使轉印材料層達到玻璃轉換溫度而產生熔融現象。藉此可使轉印材料層黏著於所壓合接觸之基板表面。然後,移除模仁,此時黏著於基板表面上的轉印材料層即轉印至基板表面上,而完成接觸式轉印製程。In the current contact micro-nano pattern transfer technology, the transfer material on the pattern structure projection of the mold core is usually laminated on the surface of the substrate. Next, the transfer material layer is heated to cause the transfer material layer to reach the glass transition temperature to cause a melting phenomenon. Thereby, the transfer material layer can be adhered to the surface of the substrate to be pressed into contact. Then, the mold core is removed, and the transfer material layer adhered to the surface of the substrate is transferred onto the surface of the substrate to complete the contact transfer process.

然而,將轉印材料層加熱至其玻璃轉化溫度會耗費大量熱能,而導致製程熱預算增加。此外,轉印材料層的加熱程序也不利於在可撓性基板上的圖案轉印,而縮減了接觸式轉印製程的應用性。However, heating the transfer material layer to its glass transition temperature consumes a large amount of thermal energy, resulting in an increase in the process heat budget. In addition, the heating process of the transfer material layer is also disadvantageous for pattern transfer on the flexible substrate, which reduces the applicability of the contact transfer process.

因此,本發明之一態樣就是在提供一種光固化式微奈米圖案之接觸轉印方法,其採用感光型固化材料來作為待接觸轉印層之材料,故轉印製程中僅需以光照射即可有效固化待接觸轉印層,而無需使用任何加熱源來進行待接觸轉印層的固化。因此,可大幅降低接觸轉印製程的熱預算。Therefore, one aspect of the present invention provides a contact transfer method of a photocurable micro-nano pattern, which uses a photosensitive curing material as a material to be contacted with a transfer layer, so that only a light irradiation is required in the transfer process. The transfer layer to be contacted can be effectively cured without using any heat source for curing the transfer layer to be contacted. Therefore, the thermal budget of the contact transfer process can be greatly reduced.

本發明之另一態樣是在提供一種光固化式微奈米圖案之接觸轉印方法,其可在室溫下進行,而無需將溫度提升至待接觸轉印層之玻璃轉換溫度。因此,此光固化式微奈米圖案之接觸轉印方法可應用於塑膠材質、高分子聚合物(polymer)系列材質或是有機材料等可撓性基板上的圖案轉印。Another aspect of the present invention is to provide a contact transfer method of a photocurable micro-nano pattern which can be carried out at room temperature without raising the temperature to the glass transition temperature of the transfer layer to be contacted. Therefore, the contact transfer method of the photocurable micro-nano pattern can be applied to pattern transfer on a flexible substrate such as a plastic material, a polymer series material or an organic material.

根據本發明之上述態樣,提出一種光固化式微奈米圖案之接觸轉印方法,包含下列步驟。提供模仁,其中此模仁具有相對之第一表面與第二表面,且第一表面包含圖案結構,此圖案結構包含至少一凸出部與至少一凹陷部。依模仁表面的抗沾黏性的強弱選擇性地形成抗沾黏層於模仁表面,然後形成轉印材料層至少位於凸出部上。提供基板,其中此基板之一表面設有感光型固化材料層。將凸出部上之轉印材料層壓合在感光型固化材料層上。對感光型固化材料層進行一照射步驟,以固化感光型固化材料層,而將凸出部上之轉印材料層固定在感光型固化材料層中。移除模仁。以感光型固化材料層中之轉印材料層作為遮罩,對感光型固化材料層進行一圖案化步驟,直至暴露出前述基板之表面的一部分。According to the above aspect of the invention, a contact transfer method of a photocurable micro-nano pattern is proposed, comprising the following steps. A mold core is provided, wherein the mold core has opposite first and second surfaces, and the first surface includes a pattern structure including at least one protrusion and at least one recess. The anti-adhesion layer is selectively formed on the surface of the mold core according to the anti-adhesion property of the surface of the mold core, and then the transfer material layer is formed at least on the convex portion. A substrate is provided, wherein one surface of the substrate is provided with a photosensitive curing material layer. The transfer material on the projection is laminated on the photosensitive cured material layer. The photosensitive cured material layer is subjected to an irradiation step to cure the photosensitive cured material layer, and the transfer material layer on the convex portion is fixed in the photosensitive cured material layer. Remove the mold kernel. The photosensitive material layer is subjected to a patterning step by using a transfer material layer in the photosensitive cured material layer as a mask until a portion of the surface of the substrate is exposed.

依據本發明之一實施例,於圖案化步驟後,上述之光固化式微奈米圖案之接觸轉印方法更包含移除感光型固化材料層中之轉印材料層。According to an embodiment of the invention, after the patterning step, the contact transfer method of the photocurable micro-nano pattern further comprises removing the transfer material layer in the photosensitive cured material layer.

依據本發明之另一實施例,於圖案化步驟後,上述之光固化式微奈米圖案之接觸轉印方法更包含下列步驟。以感光型固化材料層中之轉印材料層作為遮罩,對上述基板之表面之暴露部分進行蝕刻步驟。移除感光型固化材料層與感光型固化材料層中之轉印材料層。According to another embodiment of the present invention, after the patterning step, the contact transfer method of the photocurable micro-nano pattern further comprises the following steps. The exposed portion of the surface of the substrate is subjected to an etching step by using a transfer material layer in the photosensitive cured material layer as a mask. The photosensitive material layer and the transfer material layer in the photosensitive cured material layer are removed.

依據本發明之又一實施例,於圖案化步驟後,上述之光固化式微奈米圖案之接觸轉印方法更包含下列步驟。形成一圖案材料層於感光型固化材料層中之轉印材料層與基板之表面的暴露部分上。進行一舉離(Lift-off)步驟,以移除感光型固化材料層、與位於感光型固化材料層上之轉印材料層及圖案材料層。According to still another embodiment of the present invention, after the patterning step, the contact transfer method of the photocurable micro-nano pattern further comprises the following steps. A pattern material layer is formed on the exposed portion of the transfer material layer in the photosensitive cured material layer and the surface of the substrate. A Lift-off step is performed to remove the photosensitive cured material layer, the transfer material layer and the pattern material layer on the photosensitive cured material layer.

根據本發明之上述態樣,更提出一種光固化式微奈米圖案之接觸轉印方法,包含下列步驟。提供模仁,其中此模仁具有相對之第一表面與第二表面。形成轉印材料層位於模仁之第一表面的一部分上,其中轉印材料層構成一圖案結構。提供基板,其中基板之一表面設有感光型固化材料層。將轉印材料層壓合在感光型固化材料層上。對感光型固化材料層進行照射步驟,以固化感光型固化材料層,而將轉印材料層固定在感光型固化材料層中。移除模仁。以轉印材料層作為遮罩,對感光型固化材料層進行圖案化步驟,直至暴露出前述基板之表面的一部分。According to the above aspect of the invention, a contact transfer method of a photocurable micro-nano pattern is further provided, which comprises the following steps. A mold core is provided wherein the mold core has opposing first and second surfaces. A layer of transfer material is formed on a portion of the first surface of the mold core, wherein the layer of transfer material forms a pattern structure. A substrate is provided, wherein one surface of the substrate is provided with a photosensitive curing material layer. The transfer material is laminated on the photosensitive cured material layer. The photosensitive cured material layer is subjected to an irradiation step to cure the photosensitive cured material layer, and the transfer material layer is fixed in the photosensitive cured material layer. Remove the mold kernel. The photosensitive material layer is patterned by the transfer material layer as a mask until a portion of the surface of the substrate is exposed.

藉由感光型固化材料的採用,可無需利用加熱方式進行待接觸轉印層之固化,因此可降低製程熱預算,並有利於可撓性基板的轉印圖案化。By adopting the photosensitive curing material, the curing of the transfer layer to be contacted can be performed without using a heating method, thereby reducing the process heat budget and facilitating transfer patterning of the flexible substrate.

在一實施方式中,進行微奈米圖案之接觸轉印時,可先提供模仁100,如第1A圖、第1B圖、第1C圖與第1D圖所示。模仁100包含二表面102與104,其中此二表面102與104分別位於模仁100之相對二側。模仁100之表面102設有圖案結構110。圖案結構110包含至少一凸出部106與至少一凹陷部108,其中凸出部106與凹陷部108共同定義出圖案結構110之圖案。In one embodiment, when the contact transfer of the micro-nano pattern is performed, the mold core 100 may be first provided as shown in FIGS. 1A, 1B, 1C, and 1D. The mold core 100 includes two surfaces 102 and 104, wherein the two surfaces 102 and 104 are respectively located on opposite sides of the mold core 100. The surface 102 of the mold core 100 is provided with a pattern structure 110. The pattern structure 110 includes at least one protrusion 106 and at least one recess 108, wherein the protrusion 106 and the recess 108 together define a pattern of the pattern structure 110.

在一實施例中,圖案結構110之圖案尺寸可為微米級。在另一實施例中,圖案結構110之圖案尺寸可為奈米級。In an embodiment, the pattern size of the pattern structure 110 can be on the order of microns. In another embodiment, the pattern size of the pattern structure 110 can be nanometer.

在本實施方式中,模仁100之材料可例如包含矽、高分子聚合物系列材料、有機材料、塑膠材料、半導體材料、金屬材料、石英、玻璃材料、陶瓷材料、無機材料、或上述材料中任二者或任二者以上所合成之材料。In the present embodiment, the material of the mold core 100 may include, for example, tantalum, a polymer series material, an organic material, a plastic material, a semiconductor material, a metal material, a quartz, a glass material, a ceramic material, an inorganic material, or the like. A material synthesized by any two or more of them.

在第1A圖所示之實施例中,模仁100本身係由抗沾黏材料所組成,因此模仁100之表面102上可無需另外設置抗沾黏膜層。此時,模仁100之材料可為含氟高分子聚合物(polymer)系列材質,例如杜邦(DuPont)公司所生產的乙烯-四氟乙烯共聚物(ethylene tetrafluoroethylene);或是不含氟高分子聚合物(polymer)系列材質,例如聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)、或聚氨酯丙烯酸酯(polyurethane acrylate)等具抗沾黏之材料。在此實施例中,接著可直接於模仁100之表面102上形成轉印材料層112與114。其中,轉印材料層112位於圖案結構110之凸出部106上,轉印材料層114則位於圖案結構110之凹陷部108上。在另一實施例中,可僅在圖案結構110之凸出部106上形成轉印材料層112,而圖案結構110之凹陷部108中並未形成任何轉印材料層,如第1D圖所示。In the embodiment shown in Fig. 1A, the mold core 100 itself is composed of an anti-adhesive material, so that no additional anti-adhesion layer may be provided on the surface 102 of the mold core 100. At this time, the material of the mold core 100 may be a fluorine-containing polymer series material, such as ethylene tetrafluoroethylene produced by DuPont, or a fluorine-free polymer. Polymer series materials, such as polyethylene terephthalate (PET), or polyurethane acrylate, which are resistant to adhesion. In this embodiment, transfer material layers 112 and 114 can then be formed directly on surface 102 of mold core 100. The transfer material layer 112 is located on the protrusion 106 of the pattern structure 110, and the transfer material layer 114 is located on the recess 108 of the pattern structure 110. In another embodiment, the transfer material layer 112 may be formed only on the protrusions 106 of the pattern structure 110, and no transfer material layer is formed in the recesses 108 of the pattern structure 110, as shown in FIG. 1D. .

在第1B圖與第1C圖所示之實施例中,模仁100本身可能由非抗沾黏材料所組成。因此,可先在模仁100之表面102的圖案結構110上形成抗沾黏膜層116。然後,如第1B圖所示,可僅於模仁100之圖案結構110的凸出部106上形成轉印材料層112。或者,如第1C圖所示,可於模仁100之圖案結構110的凸出部106與凹陷部108上分別形成轉印材料層112與114。In the embodiment shown in Figures 1B and 1C, the mold core 100 itself may be composed of a non-adhesive material. Therefore, the anti-adhesion film layer 116 can be formed on the pattern structure 110 of the surface 102 of the mold core 100. Then, as shown in FIG. 1B, the transfer material layer 112 may be formed only on the projections 106 of the pattern structure 110 of the mold core 100. Alternatively, as shown in FIG. 1C, the transfer material layers 112 and 114 may be formed on the projections 106 and the recesses 108 of the pattern structure 110 of the mold core 100, respectively.

在另一實施例中,進行微奈米圖案之接觸轉印時,可先提供模仁200,如第1E圖與第1F圖所示。模仁200包含二表面202與204,其中此二表面202與204分別位於模仁200之相對二側。當模仁200本身由抗沾黏材料所組成時,如第1E圖所示,模仁200之表面202已經設有轉印材料層206。其中,此轉印材料層206構成圖案結構210。在又一實施例中,當模仁200本身可能由非抗沾黏材料所組成,如第1F圖所示,可先在模仁200之表面202上形成抗沾黏膜層208,再於抗沾黏膜層208上形成由轉印材料層206構成之圖案結構210。模仁200所採用之材料可與模仁100相同。此外,圖案結構210之圖案尺寸可為微米級或奈米級。In another embodiment, when the contact transfer of the micro-nano pattern is performed, the mold core 200 may be first provided as shown in FIGS. 1E and 1F. The mold core 200 includes two surfaces 202 and 204, wherein the two surfaces 202 and 204 are respectively located on opposite sides of the mold core 200. When the mold core 200 itself is composed of an anti-adhesive material, as shown in FIG. 1E, the surface 202 of the mold core 200 has been provided with a transfer material layer 206. The transfer material layer 206 constitutes a pattern structure 210. In still another embodiment, when the mold core 200 itself may be composed of a non-adhesive material, as shown in FIG. 1F, an anti-sticking layer 208 may be formed on the surface 202 of the mold core 200, and then the anti-sticking layer is formed. A pattern structure 210 composed of a transfer material layer 206 is formed on the mucous layer 208. The material used in the mold core 200 can be the same as the mold core 100. In addition, the pattern size of the pattern structure 210 may be on the order of micrometers or nanometers.

提供模仁100的同時,可提供待接觸轉印之基板118。在第1A圖、第1B圖、第1C圖、第1D圖、第1E圖與第1F圖所示之實施例中,基板118可為平面狀結構,因而可包含二表面120與122,其中此二表面120與122分別位於基板118之相對二側。在另一些實施例中,可採用滾筒狀或其他非平面結構來作為基板。因此,基板亦可具有曲面。在一實施例中,基板可採用圓柱,因此可製作出滾筒模仁。While the mold core 100 is provided, the substrate 118 to be contacted for transfer can be provided. In the embodiments shown in FIGS. 1A, 1B, 1C, 1D, 1E, and 1F, the substrate 118 may have a planar structure and thus may include two surfaces 120 and 122, wherein The two surfaces 120 and 122 are respectively located on opposite sides of the substrate 118. In other embodiments, a drum or other non-planar structure may be employed as the substrate. Therefore, the substrate can also have a curved surface. In one embodiment, the substrate can be cylindrical, so that the roller mold can be fabricated.

在本實施方式中,基板118之材料可例如包含矽、高分子聚合物系列材料、有機材料、塑膠材料、半導體材料、金屬材料、石英、玻璃材料、陶瓷材料、無機材料、或上述材料中任二者或任二者以上所合成之材料。In the present embodiment, the material of the substrate 118 may include, for example, tantalum, a polymer series material, an organic material, a plastic material, a semiconductor material, a metal material, a quartz, a glass material, a ceramic material, an inorganic material, or any of the above materials. A material synthesized by two or more of them.

接著,如第1A圖、第1B圖、第1C圖與第1D圖、第1E圖與第1F圖所示,形成感光型固化材料層124覆蓋在基板118之表面120上。感光型固化材料層124之材料可例如為高分子材料、光阻材料、有機材料、或上述材料中任二者或任二者以上所合成之材料。在一實施例中,感光型固化材料層124之材料可例如為紫外線硬化樹脂。然後,使模仁100具有圖案結構110的表面102與基板118之表面120上的感光型固化材料層124相面對。Next, as shown in FIGS. 1A, 1B, 1C, 1D, 1E, and 1F, the photosensitive cured material layer 124 is formed on the surface 120 of the substrate 118. The material of the photosensitive cured material layer 124 may be, for example, a polymer material, a photoresist material, an organic material, or a material synthesized by any two or more of the above materials. In an embodiment, the material of the photosensitive cured material layer 124 may be, for example, an ultraviolet curable resin. Then, the surface 102 of the mold core 100 having the pattern structure 110 faces the photosensitive cured material layer 124 on the surface 120 of the substrate 118.

以下以第1A圖所示之模仁100結構作為例子,來介紹本揭示之數個實施例。當然,在本發明之其他實施例中,可採用第1B圖、第1C圖與第1D圖、第1E圖與第1F圖所示之模仁結構。Hereinafter, several embodiments of the present disclosure will be described by taking the structure of the mold 100 shown in Fig. 1A as an example. Of course, in other embodiments of the present invention, the mold structure shown in Figs. 1B, 1C, 1D, 1E, and 1F can be employed.

將模仁100之圖案結構110的凸出部106上的轉印材料層112壓合在基板118之表面120上的感光型固化材料層124上。請參照第2A圖,壓合模仁100與基板118時,可從模仁100之表面104對模仁100施加集中型之壓力128、及/或從基板118之表面122對基板118施加集中型之壓力128B。舉例而言,利用滾筒126在模仁100之表面104或基板118之表面122上進行滾壓步驟,而對模仁100施加一集中型壓力128。The transfer material layer 112 on the projections 106 of the pattern structure 110 of the mold core 100 is pressed against the photosensitive cured material layer 124 on the surface 120 of the substrate 118. Referring to FIG. 2A, when the mold core 100 and the substrate 118 are pressed, a concentrated pressure 128 can be applied to the mold core 100 from the surface 104 of the mold core 100, and/or a concentrated type can be applied to the substrate 118 from the surface 122 of the substrate 118. The pressure is 128B. For example, a roller 126 is used to perform a rolling step on the surface 104 of the mold core 100 or the surface 122 of the substrate 118, and a concentrated pressure 128 is applied to the mold core 100.

在另一實施例中,請參照第2B圖,壓合模仁100與基板118時,可從模仁100之表面104及/或基板118之表面122來施加均佈型的壓力130。In another embodiment, referring to FIG. 2B, when the mold core 100 and the substrate 118 are pressed, a uniform pressure 130 can be applied from the surface 104 of the mold core 100 and/or the surface 122 of the substrate 118.

施加集中型壓力128或均佈型的壓力130時,可利用例如機械式、電磁式、液壓式或氣壓式等加壓方法。When a concentrated pressure 128 or a uniform pressure 130 is applied, a pressurization method such as mechanical, electromagnetic, hydraulic or pneumatic can be used.

接著,以入射光132照射感光型固化材料層124,以固化感光型固化材料層124。固化感光型固化材料層124時,由於模仁100之圖案結構110之凸出部106上的轉印材料層112壓合在感光型固化材料層124中,因此感光型固化材料層124的固化可使轉印材料層112固定在感光型固化材料層124中。在一實施例中,照射感光型固化材料層124所採用之入射光132之波長範圍可例如介於1nm至107 μm之間。入射光132之選擇可根據所採用之感光型固化材料層124而定。在一些實施例中,入射光132可採用雷射光或燈源式光源。Next, the photosensitive cured material layer 124 is irradiated with incident light 132 to cure the photosensitive cured material layer 124. When the photosensitive cured material layer 124 is cured, since the transfer material layer 112 on the protruding portion 106 of the pattern structure 110 of the mold core 100 is pressed into the photosensitive cured material layer 124, the curing of the photosensitive cured material layer 124 can be performed. The transfer material layer 112 is fixed in the photosensitive cured material layer 124. In one embodiment, the wavelength of incident light 132 used to illuminate the photosensitive cured material layer 124 may range, for example, between 1 nm and 10 7 μm. The choice of incident light 132 may depend on the photosensitive cured material layer 124 employed. In some embodiments, the incident light 132 can be a laser or a light source.

在本實施方式中,並不需要利用加熱源來加熱固化感光型固化材料層124,因此照射感光型固化材料層124時可在室溫下進行。故,不僅可降低製程之熱預算,更有利於可撓性基板之轉印製程的進行。若感光型固化材料層124為需要預先烘烤才能進行感光固化時,則在轉印前,即在模仁100之圖案結構110之凸出部106上的轉印材料層112壓合在感光型固化材料層124前,可先行進行烘烤。此時,感光型固化材料層124之材料例如為含有揮發性溶劑之感光型固化材料。預先烘烤的溫度可依照感光型固化材料層124的材料特性而定。In the present embodiment, it is not necessary to heat and cure the photosensitive cured material layer 124 by the heat source. Therefore, the photosensitive cured material layer 124 can be irradiated at room temperature. Therefore, not only can the thermal budget of the process be reduced, but also the transfer process of the flexible substrate can be facilitated. If the photosensitive cured material layer 124 is required to be pre-baked for photocuring, the transfer material layer 112 on the projection 106 of the pattern structure 110 of the mold core 100 is pressed before the transfer. Before the layer of the material 124 is cured, it can be baked first. At this time, the material of the photosensitive cured material layer 124 is, for example, a photosensitive cured material containing a volatile solvent. The prebaking temperature may be determined in accordance with the material properties of the photosensitive cured material layer 124.

在一實施例中,請參照第3A圖,入射光132可經由滾筒126來照射感光型固化材料層124。入射光132透過滾筒126的聚焦,聚焦點的光強度增加,因此可加速感光型固化材料層124的固化。In an embodiment, referring to FIG. 3A, the incident light 132 can illuminate the photosensitive cured material layer 124 via the roller 126. The incident light 132 is transmitted through the focus of the roller 126, and the light intensity of the focus point is increased, so that the curing of the photosensitive cured material layer 124 can be accelerated.

在另一實施例中,請參照3B圖,入射光132亦可不經由滾筒126來照射感光型固化材料層124,而是從未被滾筒126直接接觸施壓的另一端對感光型固化材料層124進行照射。In another embodiment, referring to FIG. 3B, the incident light 132 may also illuminate the photosensitive cured material layer 124 without passing through the roller 126, but may be from the other end of the photosensitive cured material layer 124 that is not directly contacted by the roller 126. Irradiation is performed.

在又一實施例中,請參照3C圖,利用均佈壓力來壓合模仁100與基板118時,可從模仁100之表面104對感光型固化材料層124進行照射。In still another embodiment, referring to FIG. 3C, when the mold core 100 and the substrate 118 are pressed by the uniform pressure, the photosensitive cured material layer 124 can be irradiated from the surface 104 of the mold core 100.

於再一實施例中,請參照3D圖,利用均佈壓力來壓合模仁100與基板118時,亦可從基板118之表面122對感光型固化材料層124進行照射。In still another embodiment, referring to the 3D drawing, when the mold core 100 and the substrate 118 are pressed by the uniform pressure, the photosensitive solidified material layer 124 may be irradiated from the surface 122 of the substrate 118.

完成感光型固化材料層124之固化處理後,自基板118之表面120上移除模仁100。此時,由於感光型固化材料層124的固化而使得轉印材料層112固定在感光型固化材料層124中,再加上模仁100本身具有抗沾黏特性(如第1A圖與第1D圖所示)、或模仁100之圖案結構110上覆蓋有抗沾黏膜層116(如第1B圖與第1C圖所示)。因此,模仁100移除後,轉印材料層112會貼附或嵌設於感光型固化材料層124中,如第4圖所示。After the curing process of the photosensitive cured material layer 124 is completed, the mold core 100 is removed from the surface 120 of the substrate 118. At this time, the transfer material layer 112 is fixed in the photosensitive cured material layer 124 due to the curing of the photosensitive cured material layer 124, and the mold core 100 itself has anti-stick properties (such as FIG. 1A and FIG. 1D). The patterned structure 110 of the mold or the mold 100 is covered with an anti-sticking layer 116 (as shown in Figures 1B and 1C). Therefore, after the mold core 100 is removed, the transfer material layer 112 is attached or embedded in the photosensitive cured material layer 124 as shown in FIG.

接下來,利用轉印材料層112作為遮罩,來圖案化感化型固化材料層124,而移除部分之感光型固化材料層124,直至暴露出基板118之表面120的一部分,藉以將轉印材料層112之圖案轉移至感光型固化材料層124中。此時,如第5圖所示,轉印材料層112與經圖案化後的感光型固化材料層124的堆疊結構構成一圖案結構134。此圖案結構134之圖案即轉移自模仁100之圖案。在一實施例中,圖案化感光型固化材料層124時可利用例如蝕刻方式。Next, the inductive curing material layer 124 is patterned by using the transfer material layer 112 as a mask, and a portion of the photosensitive curing material layer 124 is removed until a portion of the surface 120 of the substrate 118 is exposed, whereby the transfer is performed. The pattern of the material layer 112 is transferred into the photosensitive cured material layer 124. At this time, as shown in FIG. 5, the stacked structure of the transfer material layer 112 and the patterned photosensitive cured material layer 124 constitutes a pattern structure 134. The pattern of the pattern structure 134 is transferred from the pattern of the mold core 100. In an embodiment, an etching method can be utilized, for example, when patterning the photosensitive cured material layer 124.

在另一實施例中,亦可在完成感光型固化材料層124的圖案化後,將轉印材料層112予以移除。In another embodiment, the transfer material layer 112 may also be removed after the patterning of the photosensitive cured material layer 124 is completed.

在另一實施方式中,可在第5圖之圖案結構134形成後,再次以轉印材料層112作為遮罩,來圖案化基板118,以將圖案結構134之圖案轉移至基板118之表面120中,如第6A圖所示。圖案化基板118之表面120時,可利用例如蝕刻方式,而蝕刻基板118之表面120的暴露部分。In another embodiment, after the pattern structure 134 of FIG. 5 is formed, the substrate 118 is patterned again with the transfer material layer 112 as a mask to transfer the pattern of the pattern structure 134 to the surface 120 of the substrate 118. In, as shown in Figure 6A. When the surface 120 of the substrate 118 is patterned, the exposed portions of the surface 120 of the substrate 118 can be etched using, for example, an etch.

如第7A圖所示,完成基板118之圖案化後,移除轉印材料層112與剩餘之感光型固化材料層124,而在基板118之表面120中形成圖案結構136。As shown in FIG. 7A, after the patterning of the substrate 118 is completed, the transfer material layer 112 and the remaining photosensitive cured material layer 124 are removed, and the pattern structure 136 is formed in the surface 120 of the substrate 118.

在又一實施方式中,亦可在第5圖之圖案結構134形成後,先形成圖案材料層138與140分別位於轉印材料層112與基板118之表面120的暴露部分上,如第6B圖所示。接著,利用例如舉離方式,移除感光型固化材料層124以及其上之轉印材料層112與圖案材料層138,而在基板118之表面120上形成由圖案材料層140所構成之圖案結構142,如第7B圖所示。此圖案結構142之圖案與模仁100之圖案結構110的圖案互補。In still another embodiment, after the pattern structure 134 of FIG. 5 is formed, the pattern material layers 138 and 140 are first formed on the exposed portions of the surface 120 of the transfer material layer 112 and the substrate 118, as shown in FIG. 6B. Shown. Next, the photosensitive cured material layer 124 and the transfer material layer 112 and the pattern material layer 138 thereon are removed by, for example, lift-off, and a pattern structure composed of the pattern material layer 140 is formed on the surface 120 of the substrate 118. 142, as shown in Figure 7B. The pattern of the pattern structure 142 is complementary to the pattern of the pattern structure 110 of the mold core 100.

由上述之實施方式可知,本發明之一優點就是因為本發明之光固化式微奈米圖案之接觸轉印方法採用感光型固化材料來作為待接觸轉印層之材料,因此轉印製程中僅需以光照射即可有效固化待接觸轉印層,而無需使用任何加熱源來進行待接觸轉印層的固化。因此,可大幅降低接觸轉印製程的熱預算。It can be seen from the above embodiments that one of the advantages of the present invention is that the contact transfer method of the photocurable micro-nano pattern of the present invention uses a photosensitive curing material as the material of the transfer layer to be contacted, so that only the transfer process is required. The transfer layer to be contacted can be effectively cured by irradiation with light without using any heat source for curing the transfer layer to be contacted. Therefore, the thermal budget of the contact transfer process can be greatly reduced.

由上述之實施方式可知,本發明之另一優點就是因為本發明之光固化式微奈米圖案之接觸轉印方法可在室溫下進行,而無需將溫度提升至待接觸轉印層之玻璃轉換溫度。因此,此光固化式微奈米圖案之接觸轉印方法可應用於塑膠材質、高分子聚合物(polymer)系列材質或是有機材料等可撓性基板上的圖案轉印。It can be seen from the above embodiments that another advantage of the present invention is that the contact transfer method of the photocurable micro-nano pattern of the present invention can be carried out at room temperature without increasing the temperature to the glass transition of the transfer layer to be contacted. temperature. Therefore, the contact transfer method of the photocurable micro-nano pattern can be applied to pattern transfer on a flexible substrate such as a plastic material, a polymer series material or an organic material.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何在此技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。The present invention has been disclosed in the above embodiments, and is not intended to limit the present invention. Any one of ordinary skill in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100...模仁100. . . Mold

102...表面102. . . surface

104...表面104. . . surface

106...凸出部106. . . Protrusion

108...凹陷部108. . . Depression

110...圖案結構110. . . Pattern structure

112...轉印材料層112. . . Transfer material layer

114...轉印材料層114. . . Transfer material layer

116...抗沾黏膜層116. . . Anti-adhesive layer

118...基板118. . . Substrate

120...表面120. . . surface

122...表面122. . . surface

124...感光型固化材料層124. . . Photosensitive curing material layer

126...滾筒126. . . roller

128...壓力128. . . pressure

130...壓力130. . . pressure

132...入射光132. . . Incident light

134...圖案結構134. . . Pattern structure

136...圖案結構136. . . Pattern structure

138...圖案材料層138. . . Pattern material layer

140...圖案材料層140. . . Pattern material layer

142...圖案結構142. . . Pattern structure

200...模仁200. . . Mold

202...表面202. . . surface

204...表面204. . . surface

206...轉印材料層206. . . Transfer material layer

208...抗沾黏膜層208. . . Anti-adhesive layer

210...圖案結構210. . . Pattern structure

為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.

第1A圖係繪示依照本發明之一實施方式的一種模仁與基板之設置示意圖。FIG. 1A is a schematic view showing the arrangement of a mold core and a substrate according to an embodiment of the present invention.

第1B圖係繪示依照本發明之另一實施方式的一種模仁與基板之設置示意圖。FIG. 1B is a schematic view showing the arrangement of a mold core and a substrate according to another embodiment of the present invention.

第1C圖係繪示依照本發明之又一實施方式的一種模仁與基板之設置示意圖。FIG. 1C is a schematic view showing the arrangement of a mold core and a substrate according to still another embodiment of the present invention.

第1D圖係繪示依照本發明之再一實施方式的一種模仁與基板之設置示意圖。FIG. 1D is a schematic view showing the arrangement of a mold core and a substrate according to still another embodiment of the present invention.

第1E圖係繪示依照本發明之再一實施方式的一種模仁與基板之設置示意圖。FIG. 1E is a schematic view showing the arrangement of a mold core and a substrate according to still another embodiment of the present invention.

第1F圖係繪示依照本發明之再一實施方式的一種模仁與基板之設置示意圖。FIG. 1F is a schematic view showing the arrangement of a mold core and a substrate according to still another embodiment of the present invention.

第2A圖係繪示依照本發明之一實施方式的一種模仁與基板之壓合示意圖。2A is a schematic view showing the pressing of a mold core and a substrate according to an embodiment of the present invention.

第2B圖係繪示依照本發明之另一實施方式的一種模仁與基板之壓合示意圖。FIG. 2B is a schematic view showing the pressing of a mold core and a substrate according to another embodiment of the present invention.

第3A圖係繪示依照本發明之一實施方式的一種模仁與基板之照射示意圖。FIG. 3A is a schematic diagram showing illumination of a mold core and a substrate according to an embodiment of the present invention.

第3B圖係繪示依照本發明之另一實施方式的一種模仁與基板之照射示意圖。FIG. 3B is a schematic diagram showing illumination of a mold core and a substrate according to another embodiment of the present invention.

第3C圖係繪示依照本發明之又一實施方式的一種模仁與基板之照射示意圖。FIG. 3C is a schematic view showing illumination of a mold core and a substrate according to still another embodiment of the present invention.

第3D圖係繪示依照本發明之再一實施方式的一種模仁與基板之照射示意圖。FIG. 3D is a schematic diagram showing illumination of a mold core and a substrate according to still another embodiment of the present invention.

第4圖係繪示依照本發明之一實施方式的一種模仁脫離基板後之示意圖。4 is a schematic view showing a mold core separated from a substrate according to an embodiment of the present invention.

第5圖係繪示依照本發明之一實施方式的一種基板上形成有轉印圖案後之剖面示意圖。FIG. 5 is a schematic cross-sectional view showing a transfer pattern formed on a substrate according to an embodiment of the present invention.

第6A圖與第7A圖係繪示依照本發明之另一實施方式的一種於基板上形成圖案之製程剖面圖。6A and 7A are cross-sectional views showing a process of forming a pattern on a substrate in accordance with another embodiment of the present invention.

第6B圖與第7B圖係繪示依照本發明之又一實施方式的一種於基板上形成圖案之製程剖面圖。6B and 7B are cross-sectional views showing a process of forming a pattern on a substrate according to still another embodiment of the present invention.

100...模仁100. . . Mold

102...表面102. . . surface

104...表面104. . . surface

106...凸出部106. . . Protrusion

108...凹陷部108. . . Depression

110...圖案結構110. . . Pattern structure

112...轉印材料層112. . . Transfer material layer

114...轉印材料層114. . . Transfer material layer

118...基板118. . . Substrate

120...表面120. . . surface

122...表面122. . . surface

124...感光型固化材料層124. . . Photosensitive curing material layer

126...滾筒126. . . roller

132...入射光132. . . Incident light

Claims (52)

一種光固化式微奈米圖案之接觸轉印方法,包含:提供一模仁,其中該模仁具有相對之一第一表面與一第二表面,且該第一表面包含一圖案結構,該圖案結構包含至少一凸出部與至少一凹陷部;形成一轉印材料層至少位於該凸出部上;提供一基板,其中該基板之一表面設有一感光型固化材料層;將該凸出部上之該轉印材料層壓合在該感光型固化材料層上,其中將該凸出部上之該轉印材料層壓合在該感光型固化材料層上之步驟包含施加一集中壓力;對該感光型固化材料層進行一照射步驟,以固化該感光型固化材料層,而將該凸出部上之該轉印材料層固定在該感光型固化材料層中;移除該模仁;以及以該感光型固化材料層中之該轉印材料層作為遮罩,對該感光型固化材料層進行一圖案化步驟,直至暴露出該基板之該表面的一部分。 A contact transfer method for a photocurable micro-nano pattern, comprising: providing a mold core, wherein the mold core has a first surface and a second surface, and the first surface comprises a pattern structure, the pattern structure Having at least one protrusion and at least one recess; forming a transfer material layer at least on the protrusion; providing a substrate, wherein a surface of the substrate is provided with a photosensitive curing material layer; The transfer material is laminated on the photosensitive cured material layer, wherein the step of laminating the transfer material on the protruding portion on the photosensitive cured material layer comprises applying a concentrated pressure; The photosensitive cured material layer is subjected to an irradiation step to cure the photosensitive cured material layer, and the transfer material layer on the protruding portion is fixed in the photosensitive cured material layer; the mold core is removed; The transfer material layer in the photosensitive cured material layer serves as a mask, and the photosensitive cured material layer is subjected to a patterning step until a portion of the surface of the substrate is exposed. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該模仁之材料包含矽、高分子聚合物系列材料、有機材料、塑膠材料、半導體材料、金屬材料、石英、玻璃材料、陶瓷材料、無機材料、或上述材料中任二者或任二者以上所合成之材料。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the material of the mold comprises bismuth, polymer series material, organic material, plastic material, semiconductor material, metal material, quartz, glass material. a ceramic material, an inorganic material, or a material synthesized by any two or more of the above materials. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該圖案結構之圖案尺寸為微米級。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the pattern size of the pattern structure is on the order of micrometers. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該圖案結構之圖案尺寸為奈米級。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the pattern structure has a pattern size of nanometer. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該模仁之材料為含氟高分子聚合物(polymer)系列材質。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the material of the mold core is a fluorine-containing polymer series material. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該模仁之材料為聚對苯二甲酸乙二酯(polyethylene terephthalate)。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the material of the mold core is polyethylene terephthalate. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該模仁之材料為聚氨酯丙烯酸酯(polyurethane acrylate)。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the material of the mold core is polyurethane acrylate. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該模仁之材料為乙烯-四氟乙烯共聚物(ethylene tetrafluoroethylene)。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the material of the mold core is ethylene tetrafluoroethylene. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,於提供該模仁之步驟與形成該轉印材料層之步驟之 間,更包含形成一抗沾黏膜層覆蓋在該第一表面上。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the step of providing the mold and the step of forming the transfer material layer And further comprising forming an anti-adhesion layer covering the first surface. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該轉印材料層位於該凸出部與該凹陷部上。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the transfer material layer is located on the protrusion and the recess. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該基板之材料包含矽、高分子聚合物系列材料、有機材料、塑膠材料、半導體材料、金屬材料、石英、玻璃材料、陶瓷材料、無機材料、或上述材料中任二者或任二者以上所合成之材料。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the material of the substrate comprises bismuth, polymer series material, organic material, plastic material, semiconductor material, metal material, quartz, glass material a ceramic material, an inorganic material, or a material synthesized by any two or more of the above materials. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該基板包含一曲面。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the substrate comprises a curved surface. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,於提供該基板之步驟與將該凸出部上之該轉印材料層壓合在該感光型固化材料層上之步驟之間,更包含對該感光型固化材料層一預先烘烤處理。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the step of providing the substrate and the step of laminating the transfer material on the protruding portion on the photosensitive cured material layer Between the two, the photosensitive curing material layer is pre-baked. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中將該凸出部上之該轉印材料層壓合在該感光型固化材料層上之步驟包含利用一滾筒在該模仁的該第二表面上進行一滾壓步驟。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the step of laminating the transfer material on the protruding portion on the photosensitive cured material layer comprises using a roller A rolling step is performed on the second surface of the mold core. 如請求項14所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟係經由穿透該滾筒聚焦後,來照射該感光型固化材料層。 The contact transfer method of the photocurable micronano pattern according to claim 14, wherein the irradiating step irradiates the photosensitive solidified material layer after being focused by penetrating the drum. 如請求項14所述之光固化式微奈米圖案之接觸轉印方法,其中該基板包含另一表面相對於該表面,且該照射步驟係從該另一表面來照射該感光型固化材料層。 A contact transfer method of a photocurable micronano pattern according to claim 14, wherein the substrate comprises another surface with respect to the surface, and the irradiating step irradiates the photosensitive cured material layer from the other surface. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中將該凸出部上之該轉印材料層壓合在該感光型固化材料層上之步驟包含利用一滾筒在該基板之相對於該表面之另一表面上進行一滾壓步驟。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the step of laminating the transfer material on the protruding portion on the photosensitive cured material layer comprises using a roller A rolling step is performed on the other surface of the substrate relative to the surface. 如請求項17所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟係經由穿透該滾筒聚焦後,來照射該感光型固化材料層。 The contact transfer method of the photocurable micronano pattern according to claim 17, wherein the irradiating step irradiates the photosensitive solidified material layer after being focused by penetrating the drum. 如請求項17所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟係從該模仁之該第二表面來照射該感光型固化材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 17, wherein the irradiating step irradiates the photosensitive solidified material layer from the second surface of the mold. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟包含利用一入射光,且該入射光之波長範圍介於1nm至107 μm之間。The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the irradiating step comprises using an incident light, and the incident light has a wavelength ranging from 1 nm to 10 7 μm. 如請求項20所述之光固化式微奈米圖案之接觸轉印方法,其中該入射光係一雷射光。 A contact transfer method of a photocurable micronano pattern according to claim 20, wherein the incident light is a laser light. 如請求項20所述之光固化式微奈米圖案之接觸轉印方法,其中該入射光係一燈源式光源。 The contact transfer method of the photocurable micro-nano pattern according to claim 20, wherein the incident light is a light source type light source. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該感光型固化材料層之材料為高分子材料、光阻材料、有機材料或上述材料中任二者或任二者以上所合成之材料。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the material of the photosensitive cured material layer is a polymer material, a photoresist material, an organic material or any one or both of the above materials. The materials synthesized above. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該感光型固化材料層之材料為紫外線硬化樹脂。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the material of the photosensitive cured material layer is an ultraviolet curable resin. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中施加該集中壓力之步驟係利用一機械式、一電磁式、一液壓式或一氣壓式。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the step of applying the concentrated pressure is a mechanical type, an electromagnetic type, a hydraulic type or a pneumatic type. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,於該圖案化步驟後,更包含移除該感光型固化材料層中之該轉印材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, further comprising removing the transfer material layer in the photosensitive cured material layer after the patterning step. 如請求項1所述之光固化式微奈米圖案之接觸轉 印方法,於該圖案化步驟後,更包含:以該感光型固化材料層中之該轉印材料層作為遮罩,對該基板之該表面之該部分進行一蝕刻步驟;以及移除該感光型固化材料層與該感光型固化材料層中之該轉印材料層。 The contact of the photocurable micro-nano pattern as described in claim 1 a printing method, after the patterning step, further comprising: performing an etching step on the portion of the surface of the substrate by using the transfer material layer in the photosensitive cured material layer as a mask; and removing the photosensitive a layer of the cured material and the layer of the transfer material in the layer of photosensitive cured material. 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,於該圖案化步驟後,更包含:形成一圖案材料層於該感光型固化材料層中之該轉印材料層與該基板之該表面之該部分上;以及進行一舉離(Lift-off)步驟,以移除該感光型固化材料層、與位於該感光型固化材料層上之該轉印材料層及該圖案材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, after the patterning step, further comprising: forming the transfer material layer of the pattern material layer in the photosensitive cured material layer and the a portion of the surface of the substrate; and performing a lift-off step to remove the photosensitive cured material layer, the transfer material layer and the pattern material layer on the photosensitive cured material layer . 如請求項1所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟更包含在室溫下固化該感光型固化材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 1, wherein the irradiating step further comprises curing the photosensitive cured material layer at room temperature. 一種光固化式微奈米圖案之接觸轉印方法,包含:提供一模仁,其中該模仁具有相對之一第一表面與一第二表面;形成一轉印材料層位於該模仁之該第一表面的一部分上,其中該轉印材料層構成一圖案結構;提供一基板,其中該基板之一表面設有一感光型固化 材料層;將該轉印材料層壓合在該感光型固化材料層上,其中將該轉印材料層壓合在該感光型固化材料層上之步驟包含施加一集中壓力;對該感光型固化材料層進行一照射步驟,以固化該感光型固化材料層,而將該轉印材料層固定在該感光型固化材料層中;移除該模仁;以及以該轉印材料層作為遮罩,對該感光型固化材料層進行一圖案化步驟,直至暴露出該基板之該表面的一部分。 A contact transfer method for a photocurable micro-nano pattern, comprising: providing a mold core, wherein the mold core has a first surface and a second surface; forming a transfer material layer at the first of the mold core a portion of the surface, wherein the transfer material layer constitutes a pattern structure; providing a substrate, wherein a surface of the substrate is provided with a photosensitive curing a material layer; the transfer material is laminated on the photosensitive cured material layer, wherein the step of laminating the transfer material on the photosensitive cured material layer comprises applying a concentrated pressure; curing the photosensitive type The material layer is subjected to an irradiation step to cure the photosensitive cured material layer, and the transfer material layer is fixed in the photosensitive cured material layer; the mold core is removed; and the transfer material layer is used as a mask. A patterning step is performed on the photosensitive cured material layer until a portion of the surface of the substrate is exposed. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該模仁之材料包含矽、高分子聚合物系列材料、有機材料、塑膠材料、半導體材料、金屬材料、石英、玻璃材料、陶瓷材料、無機材料、或上述材料中任二者或任二者以上所合成之材料。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the material of the mold comprises bismuth, polymer series material, organic material, plastic material, semiconductor material, metal material, quartz, glass material a ceramic material, an inorganic material, or a material synthesized by any two or more of the above materials. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該模仁之材料為含氟高分子聚合物(polymer)系列材質。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the material of the mold core is a fluorine-containing polymer series material. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該模仁之材料為聚對苯二甲酸乙二酯(polyethylene terephthalate)、聚氨酯丙烯酸酯(polyurethane acrylate)或乙烯-四氟乙烯共聚物(ethylene tetrafluoroethylene)。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the material of the mold is polyethylene terephthalate, polyurethane acrylate or ethylene-tetrafluoroethylene. Ethylene copolymer Tetrafluoroethylene). 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,於提供該模仁之步驟與形成該轉印材料層之步驟之間,更包含形成一抗沾黏膜層覆蓋在該第一表面上。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, further comprising forming an anti-adhesion layer covering the first step between the step of providing the mold and the step of forming the transfer material layer On the surface. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該基板之材料包含矽、高分子聚合物系列材料、有機材料、塑膠材料、半導體材料、金屬材料、石英、玻璃材料、陶瓷材料、無機材料、或上述材料中任二者或任二者以上所合成之材料。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the material of the substrate comprises bismuth, polymer series material, organic material, plastic material, semiconductor material, metal material, quartz, glass material a ceramic material, an inorganic material, or a material synthesized by any two or more of the above materials. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該基板包含一曲面。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the substrate comprises a curved surface. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,於提供該基板之步驟與將該轉印材料層壓合在該感光型固化材料層上之步驟之間,更包含對該感光型固化材料層一預先烘烤處理。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, further comprising the step of providing the substrate and laminating the transfer material on the photosensitive cured material layer The photosensitive cured material layer is pre-baked. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中將該轉印材料層壓合在該感光型固化材料層上之步驟包含利用一滾筒在該模仁的該第二表面上進行一滾壓步驟。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the step of laminating the transfer material on the photosensitive cured material layer comprises using a second roller in the mold core A rolling step is performed on the surface. 如請求項38所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟係經由穿透該滾筒聚焦後,來照射該感光型固化材料層。 The contact transfer method of a photocurable micronano pattern according to claim 38, wherein the irradiating step irradiates the photosensitive cured material layer after being focused by penetrating the roller. 如請求項38所述之光固化式微奈米圖案之接觸轉印方法,其中該基板包含另一表面相對於該表面,且該照射步驟係從該另一表面來照射該感光型固化材料層。 A contact transfer method of a photocurable micronano pattern according to claim 38, wherein the substrate comprises another surface opposite to the surface, and the irradiating step irradiates the photosensitive cured material layer from the other surface. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中將該轉印材料層壓合在該感光型固化材料層上之步驟包含利用一滾筒在該基板之相對於該表面之另一表面上進行一滾壓步驟。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the step of laminating the transfer material on the photosensitive cured material layer comprises using a roller on the substrate relative to the surface A rolling step is performed on the other surface. 如請求項41所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟係經由穿透該滾筒聚焦後,來照射該感光型固化材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 41, wherein the irradiating step irradiates the photosensitive solidified material layer after being focused by penetrating the drum. 如請求項41所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟係從該模仁之該第二表面來照射該感光型固化材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 41, wherein the irradiating step irradiates the photosensitive solidified material layer from the second surface of the mold core. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟包含利用一入射光,且該入射光之波長範圍介於1nm至107 μm之間。The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the irradiating step comprises using an incident light, and the incident light has a wavelength ranging from 1 nm to 10 7 μm. 如請求項44所述之光固化式微奈米圖案之接觸轉印方法,其中該入射光係一雷射光或一燈源式光源。 The contact transfer method of the photocurable micro-nano pattern according to claim 44, wherein the incident light is a laser light or a light source light source. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該感光型固化材料層之材料為高分子材料、光阻材料、有機材料或上述材料中任二者或任二者以上所合成之材料。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the material of the photosensitive cured material layer is a polymer material, a photoresist material, an organic material or any one or both of the above materials. The materials synthesized above. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該感光型固化材料層之材料為紫外線硬化樹脂。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the material of the photosensitive cured material layer is an ultraviolet curable resin. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中施加該集中壓力之步驟係利用一機械式、一電磁式、一液壓式或一氣壓式。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the step of applying the concentrated pressure is a mechanical type, an electromagnetic type, a hydraulic type or a pneumatic type. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,於該圖案化步驟後,更包含移除該感光型固化材料層中之該轉印材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, further comprising removing the transfer material layer in the photosensitive cured material layer after the patterning step. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,於該圖案化步驟後,更包含:以該轉印材料層作為遮罩,對該基板之該表面之該部分進行一蝕刻步驟;以及 移除該感光型固化材料層與該感光型固化材料層中之該轉印材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, after the patterning step, further comprising: using the transfer material layer as a mask, and performing the portion of the surface of the substrate Etching step; The photosensitive cured material layer and the transfer material layer in the photosensitive cured material layer are removed. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,於該圖案化步驟後,更包含:形成一圖案材料層於該轉印材料層與該基板之該表面之該部分上;以及進行一舉離步驟,以移除該感光型固化材料層、與位於該感光型固化材料層上之該轉印材料層及該圖案材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, after the patterning step, further comprising: forming a pattern material layer on the portion of the transfer material layer and the surface of the substrate And performing a step of removing the photosensitive cured material layer, the transfer material layer and the pattern material layer on the photosensitive cured material layer. 如請求項30所述之光固化式微奈米圖案之接觸轉印方法,其中該照射步驟更包含在室溫下固化該感光型固化材料層。 The contact transfer method of the photocurable micro-nano pattern according to claim 30, wherein the irradiating step further comprises curing the photosensitive cured material layer at room temperature.
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US20090057960A1 (en) * 2005-03-30 2009-03-05 Zeon Corporation Resin mold and process for producing a molded article using the mold

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US20090057960A1 (en) * 2005-03-30 2009-03-05 Zeon Corporation Resin mold and process for producing a molded article using the mold
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