TWI411144B - Package substrate - Google Patents

Package substrate Download PDF

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Publication number
TWI411144B
TWI411144B TW99132273A TW99132273A TWI411144B TW I411144 B TWI411144 B TW I411144B TW 99132273 A TW99132273 A TW 99132273A TW 99132273 A TW99132273 A TW 99132273A TW I411144 B TWI411144 B TW I411144B
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Taiwan
Prior art keywords
package substrate
substrate body
substrate
hole
diode
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Application number
TW99132273A
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Chinese (zh)
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TW201214801A (en
Inventor
Chia Hui Shen
Tzu Chien Hung
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Advanced Optoelectronic Tech
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Priority to TW99132273A priority Critical patent/TWI411144B/en
Publication of TW201214801A publication Critical patent/TW201214801A/en
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Publication of TWI411144B publication Critical patent/TWI411144B/en

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Abstract

The present invention relates to a package substrate. The package substrate is configured for packaging LED. The package substrate includes a substrate body, a rectifier circuit, and an electrically insulative layer. The substrate body includes a first surface having a metal circuit thereon. The first surface of the substrate body has a plurality of grooves thereon. The rectifier circuit includes a plurality of LEDs. The LEDs are arranged at the grooves, respectively. The LEDs electrically connect to each other via the metal circuit of the first surface to form a bridge circuit. The electrically insulative layer forms on the first surface of the substrate body. Two outputs of the bridge circuit extend through the electrically insulative layer, and electrically connect to the LED which needs to be packaged.

Description

封裝基板 Package substrate

本發明涉及一種封裝基板,尤其涉及一種具有橋式整流電路功能的封裝基板。 The present invention relates to a package substrate, and more particularly to a package substrate having the function of a bridge rectifier circuit.

目前,發光二極體(Light Emitting Diode,LED)因具有功耗低、壽命長、體積小及亮度高等特性已經被廣泛應用到很多領域。 At present, Light Emitting Diode (LED) has been widely used in many fields due to its low power consumption, long life, small size and high brightness.

現在的在封裝基板上封裝發光二極體時,一般直接將發光二極體封裝在封裝基板上。如需直接採用交流電源對發光二極體供電,則需要封裝基板上設置一個整流電路,因此,導致發光二極體封裝結構複雜。 When the light emitting diode is packaged on the package substrate, the light emitting diode is generally directly packaged on the package substrate. If the AC power supply is used to directly supply the LED, a rectifier circuit is required on the package substrate, which results in a complicated LED package structure.

下面將以實施例說明一種具有橋式整流電路功能的封裝基板。 A package substrate having a bridge rectifier circuit function will be described below by way of example.

一種封裝基板,其用於封裝發光二極體。該封裝基板包括一基板主體,一整流裝置以及一絕緣層。該基板主體具有一第一表面,該第一表面上形成金屬線路層,且該第一表面上形成有複數個凹槽。該整流裝置包括複數個二極體,該複數個二極體分別設置在該基板的凹槽內,該複數個二極體通過該金屬線路層電連接成一橋式電路。該絕緣層形成在該基板主體的第一表面上,該橋式電 路的兩個輸出端穿過該絕緣層,以用於與發光二極體電連接。 A package substrate for encapsulating a light emitting diode. The package substrate includes a substrate body, a rectifying device and an insulating layer. The substrate body has a first surface on which a metal wiring layer is formed, and a plurality of grooves are formed on the first surface. The rectifying device includes a plurality of diodes respectively disposed in the recesses of the substrate, and the plurality of diodes are electrically connected to form a bridge circuit through the metal circuit layer. The insulating layer is formed on the first surface of the substrate body, the bridge type The two outputs of the path pass through the insulating layer for electrical connection with the light emitting diode.

相對於先前技術,所述封裝基板內形成有整流裝置,因此,將發光二極體設置在該封裝基板上,直接將發光二極體與橋式電路的輸出端電連接,從而可以直接通過外部交流電源供電,無需在封裝基板上再次設置整流電路,因此,該封裝基板結構簡單。 Compared with the prior art, a rectifying device is formed in the package substrate. Therefore, the LED is disposed on the package substrate, and the LED is directly electrically connected to the output end of the bridge circuit, so that the LED can be directly externally connected. The AC power supply does not need to re-set the rectifier circuit on the package substrate, so the package substrate has a simple structure.

100‧‧‧封裝基板 100‧‧‧Package substrate

10‧‧‧基板本體 10‧‧‧Substrate body

11‧‧‧第一表面 11‧‧‧ first surface

12‧‧‧第二表面 12‧‧‧ second surface

13‧‧‧第一導電材料 13‧‧‧First conductive material

14‧‧‧第二導電材料 14‧‧‧Second conductive material

15‧‧‧第一電連接點 15‧‧‧First electrical connection point

16‧‧‧第二電連接點 16‧‧‧Second electrical connection point

17‧‧‧凹槽 17‧‧‧ Groove

18‧‧‧金屬線路層 18‧‧‧Metal circuit layer

115‧‧‧第一通孔 115‧‧‧First through hole

116‧‧‧第二通孔 116‧‧‧Second through hole

20‧‧‧整流裝置 20‧‧‧Rectifier

21‧‧‧第一二極體 21‧‧‧First Diode

22‧‧‧第二二極體 22‧‧‧second diode

23‧‧‧第三二極體 23‧‧‧ Third Dipole

24‧‧‧第四二極體 24‧‧‧ fourth diode

圖1是本發明實施例提供的封裝基板的剖面示意圖。 FIG. 1 is a cross-sectional view of a package substrate according to an embodiment of the invention.

圖2是圖1的封裝基板的俯視圖。 2 is a top plan view of the package substrate of FIG. 1.

圖3是圖2中設置在封裝基板上的二極體的電路連接方式的等效電路圖。 3 is an equivalent circuit diagram of a circuit connection manner of a diode provided in the package substrate of FIG. 2.

下面將結合附圖對本發明實施例作進一步的詳細說明。 The embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

請參見圖1與圖2,本發明第一實施例提供一種用於封裝發光二極體的封裝基板100。該封裝基板100包括基板本體10,整流裝置20以及一個絕緣層30。 Referring to FIG. 1 and FIG. 2, a first embodiment of the present invention provides a package substrate 100 for packaging a light emitting diode. The package substrate 100 includes a substrate body 10, a rectifying device 20, and an insulating layer 30.

在本實施例中,該基板本體10具有一第一表面11以及一與其相對的第二表面12。該基板本體10上具有貫穿該第一表面11與該第二表面12的第一通孔115和第二通孔116。該第一通孔115和第二通孔116分別用於填充第一導電材料13以及第二導電材料14。在本實施例中,該基板本體10的第二表面12上具有與第一導電材料13電連接的第一電連接點15,以及與該第二導電材料14電連接的第二電連接點16。該第一電連接點15與第二電連接點16作為外部電 源接入點,其用於將外部電源電連接。基板本體10的第一表面11上具有複數個向該第二表面12延伸的凹槽17。在本實施例中,該第一表面上具有四個向該第二表面12延伸的凹槽17,該四個凹槽17排列成矩形,該第一通孔115和第二通孔116位於該矩形的兩端部。該基板本體10通常為藍寶石(Sapphire)、碳化矽(SiC)、矽(Si)、砷化鎵(GaAs)、偏鋁酸鋰(LiAlO2)、氧化鎂(MgO)、氧化鋅(ZnO)、氮化鎵(GaN)、氮化鋁(AlN)、或氮化銦(InN)等單晶基板。 In this embodiment, the substrate body 10 has a first surface 11 and a second surface 12 opposite thereto. The substrate body 10 has a first through hole 115 and a second through hole 116 extending through the first surface 11 and the second surface 12. The first through hole 115 and the second through hole 116 are used to fill the first conductive material 13 and the second conductive material 14, respectively. In the present embodiment, the second surface 12 of the substrate body 10 has a first electrical connection point 15 electrically connected to the first conductive material 13 and a second electrical connection point 16 electrically connected to the second conductive material 14. . The first electrical connection point 15 and the second electrical connection point 16 serve as external power A source access point that is used to electrically connect an external power source. The first surface 11 of the substrate body 10 has a plurality of grooves 17 extending toward the second surface 12. In this embodiment, the first surface has four recesses 17 extending toward the second surface 12, the four recesses 17 are arranged in a rectangular shape, and the first through holes 115 and the second through holes 116 are located in the Both ends of the rectangle. The substrate body 10 is generally sapphire, SiC, bismuth (Si), gallium arsenide (GaAs), lithium metaaluminate (LiAlO2), magnesium oxide (MgO), zinc oxide (ZnO), nitrogen. A single crystal substrate such as gallium (GaN), aluminum nitride (AlN), or indium nitride (InN).

在本實施例中,該整流裝置20包括四個二極體,其分別設置在該基板本體10的第一表面11上的四個凹槽17內。在本實施例中,該整流裝置20包括一第一二極體21,一第二二極體22,一第三二極體23以及一第四二極體24。在本實施例中,該整流裝置20所包括的複數個二極體通過摻雜的方式直接成長在該基板本體10的凹槽17內。 In the present embodiment, the rectifying device 20 includes four diodes disposed in four recesses 17 on the first surface 11 of the substrate body 10, respectively. In the embodiment, the rectifying device 20 includes a first diode 21, a second diode 22, a third diode 23 and a fourth diode 24. In this embodiment, the plurality of diodes included in the rectifying device 20 are directly grown in the recess 17 of the substrate body 10 by doping.

在本實施例中,該基板本體10的第一表面11上形成有金屬線路層18。該金屬線路層18用於將該複數個二極體相互電連接,形成一個橋式電路。請一併參見圖3,其為圖2中電路連接方式的等效電路圖。該第一二極體21,一第二二極體22,一第三二極體23以及一第四二極體24電連接成一橋式電路,該四個二極體分別作為橋式電路的一個橋臂。 In the embodiment, a metal wiring layer 18 is formed on the first surface 11 of the substrate body 10. The metal circuit layer 18 is used to electrically connect the plurality of diodes to each other to form a bridge circuit. Please refer to FIG. 3 together, which is an equivalent circuit diagram of the circuit connection mode in FIG. The first diode 21, the second diode 22, the third diode 23 and the fourth diode 24 are electrically connected to form a bridge circuit, and the four diodes are respectively used as a bridge circuit. A bridge arm.

其中,該第一二極體21與第三二極體23為一相對橋臂,該第二二極體22與第四二極體24為一相對橋臂。該第一二極體21的陽極與第四二極體24的陰極相連接處定義為電連接點A,該第二二極體 22的陽極與第三二極體23的陰極相連接處定義為電連接點B。電連接點A與電連接點B作為該橋式電路的外部電源接入點,用於與外部電源電連接。在本實施例中,該外部電源為一交流電源。 The first diode 21 and the third diode 23 are opposite bridge arms, and the second diode 22 and the fourth diode 24 are opposite bridge arms. The junction of the anode of the first diode 21 and the cathode of the fourth diode 24 is defined as an electrical connection point A, the second diode The junction of the anode of 22 and the cathode of the third diode 23 is defined as electrical connection point B. The electrical connection point A and the electrical connection point B serve as external power supply access points of the bridge circuit for electrical connection with an external power source. In this embodiment, the external power source is an AC power source.

該第一二極體21的陰極與第二二極體22的陰極相連接處定義為電連接點C,該第三二極體23的陽極與第四二極體24的陽極相連接處定義為電連接點D。電連接點C與電連接點D作為該封裝基板100的電源輸出點。具體地,封裝在該封裝基板100上的發光二極體的兩電極直接連接電連接點C與電連接點D,並通過外部電源對該發光二極體供電,從而通過該種封裝基板100,實現了直接對發光二極體交流供電。該封裝基板100結構簡單,可直接接通外部交流電源以對封裝於其上的發光二極體進行交流供電。 The junction of the cathode of the first diode 21 and the cathode of the second diode 22 is defined as an electrical connection point C, and the anode of the third diode 23 is connected to the anode of the fourth diode 24 For electrical connection point D. The electrical connection point C and the electrical connection point D serve as power supply output points of the package substrate 100. Specifically, the two electrodes of the light-emitting diode packaged on the package substrate 100 directly connect the electrical connection point C and the electrical connection point D, and supply power to the light-emitting diode through an external power source, thereby passing through the package substrate 100. It realizes direct AC power supply to the LED. The package substrate 100 has a simple structure, and can directly connect an external AC power source to AC-power the LEDs packaged thereon.

在實施例中,該絕緣層30形成在該基板本體10的第一表面11上。該絕緣層30可以由玻璃,或矽等絕緣材料製成。電連接點C與電連接點D通過蒸鍍方式透過該絕緣層30,並在該絕緣層30的遠離該基板本體10的表面上形成有電連接點,以用於與待封裝至該封裝基板100上的發光二極體電連接。 In an embodiment, the insulating layer 30 is formed on the first surface 11 of the substrate body 10. The insulating layer 30 may be made of an insulating material such as glass or tantalum. The electrical connection point C and the electrical connection point D are vapor-transmissively transmitted through the insulating layer 30, and an electrical connection point is formed on the surface of the insulating layer 30 away from the substrate body 10 for being packaged to the package substrate. The light-emitting diodes on 100 are electrically connected.

顯然地,依照上面實施例中的描述,本發明可能有許多的修正與差異。因此需要在其附加的權利要求項之範圍內加以理解,除了上述詳細的描述外,本發明還可以廣泛地在其他的實施例中施行。上述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離本發明所揭示之精神下所完成的等效改變或修飾,均應包含在下述申請專利範圍內。 Obviously, many modifications and differences may be made to the invention in light of the above description. It is therefore to be understood that within the scope of the appended claims, the invention may be The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the claims of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the following claims. Within the scope.

100‧‧‧封裝基板 100‧‧‧Package substrate

10‧‧‧基板本體 10‧‧‧Substrate body

11‧‧‧第一表面 11‧‧‧ first surface

12‧‧‧第二表面 12‧‧‧ second surface

13‧‧‧第一導電材料 13‧‧‧First conductive material

14‧‧‧第二導電材料 14‧‧‧Second conductive material

15‧‧‧第一電連接點 15‧‧‧First electrical connection point

16‧‧‧第二電連接點 16‧‧‧Second electrical connection point

17‧‧‧凹槽 17‧‧‧ Groove

18‧‧‧金屬線路層 18‧‧‧Metal circuit layer

115‧‧‧第一通孔 115‧‧‧First through hole

116‧‧‧第二通孔 116‧‧‧Second through hole

20‧‧‧整流裝置 20‧‧‧Rectifier

Claims (5)

一種封裝基板,所述封裝基板用於封裝發光二極體,所述封裝基板包括:一基板主體,所述基板主體具有一第一表面,所述第一表面上形成金屬線路層,且所述第一表面上形成有複數個凹槽;一整流裝置,所述包括複數個二極體,所述複數個二極體通過摻雜的方式直接成長在所述基板本體的凹槽內,所述複數個二極體通過所述金屬線路層電連接成一橋式電路;及一絕緣層,所述絕緣層形成在所述基板主體的第一表面上,所述橋式電路的兩個輸出端穿過所述絕緣層,以用於與待封裝的發光二極體電連接。 a package substrate for packaging a light emitting diode, the package substrate comprising: a substrate body, the substrate body having a first surface, a metal circuit layer formed on the first surface, and Forming a plurality of grooves on the first surface; a rectifying device, wherein the plurality of diodes are directly grown in the grooves of the substrate body by doping, a plurality of diodes are electrically connected to form a bridge circuit through the metal circuit layer; and an insulating layer is formed on the first surface of the substrate body, and the two output ends of the bridge circuit are worn The insulating layer is used for electrical connection with the light emitting diode to be packaged. 如申請專利範圍第1項所述之封裝基板,其中,所述基板主體進一步包括一個與所述第一表面相對的第二表面,所述基板主體上具有貫穿所述第一表面與所述第二表面的第一通孔與第二通孔,所述金屬線路層的兩電極分別通過所述第一通孔與所述第二通孔引導至所述基板主體的第二表面。 The package substrate of claim 1, wherein the substrate body further comprises a second surface opposite to the first surface, the substrate body having a first surface and the first surface a first through hole and a second through hole of the two surfaces, wherein the two electrodes of the metal circuit layer are respectively guided to the second surface of the substrate body through the first through hole and the second through hole. 如申請專利範圍第2項所述之封裝基板,其中,所述第一通與所述第二通孔內分別填充有第一導電材料與第二導電材料。 The package substrate of claim 2, wherein the first through hole and the second through hole are respectively filled with a first conductive material and a second conductive material. 如申請專利範圍第1項所述之封裝基板,其中,所述絕緣層為玻璃或矽。 The package substrate according to claim 1, wherein the insulating layer is glass or germanium. 如申請專利範圍第1項所述之封裝基板,其中,所述橋式電路的兩個輸出端通過蒸鍍方式穿出所述絕緣層。 The package substrate of claim 1, wherein the two output ends of the bridge circuit pass through the insulating layer by evaporation.
TW99132273A 2010-09-24 2010-09-24 Package substrate TWI411144B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200723556A (en) * 2005-12-06 2007-06-16 Tyntek Corp LED-based light emitting device having integrated rectifier circuit in substrate and method of manufacturing the same
TWM374153U (en) * 2009-03-19 2010-02-11 Intematix Technology Ct Corp Light emitting device applied to AC drive

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200723556A (en) * 2005-12-06 2007-06-16 Tyntek Corp LED-based light emitting device having integrated rectifier circuit in substrate and method of manufacturing the same
TWM374153U (en) * 2009-03-19 2010-02-11 Intematix Technology Ct Corp Light emitting device applied to AC drive

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