TWI410615B - Ir detective device - Google Patents

Abstract

The present invention relates to an IR detective device. The IR detective device includes a first electrode, a second electrode and an IR detective element disposed between the first electrode and the second electrode. The IR detective device further includes a covering structure covering part of the IR detective element and the IR detective element is divided into two parts: a light absorbing region and a light non-absorbing region. The first electrode is electrically connected with the light absorbing region, the second electrode is electrically connected with the light non-absorbing region.

Description

Infrared Detectors

The invention relates to an infrared detector.

Infrared radiation is an electromagnetic wave with a wavelength between visible light and microwave that is not visible to the human eye. To perceive the existence of such radiation and measure its strength, it must be transformed into other physical quantities that can be detected and measured. Infrared detector is a device that converts infrared signals into electrical signal output. It can be used to detect the presence of infrared rays or infrared energy. It is widely used in medical, prospecting, military and life fields. Because of its low price and stable technical performance, it becomes more and more The more people come to research hotspots.

Infrared detectors can be divided into active infrared detectors and passive infrared detectors. The active detector is composed of an infrared transmitter, an infrared receiver and an alarm system. When someone or an object passes through the infrared light emitted by the infrared transmitter, the infrared receiver generates a signal change, thereby causing the alarm to alarm. The passive infrared detector itself does not include an infrared source. When an external infrared signal is generated and received by it, a certain signal is generated to detect the presence of infrared light and the amount of energy. An infrared detector, whether it is an active infrared detector or a passive infrared detector, should include at least one object that is sensitive to infrared radiation and can be referred to as a detector element. Previous infrared detectors typically utilized photoelectric effects, ie, Under the illumination of light, the carriers (free electrons or holes) generated by the light excitation move inside the substance, causing the conductivity of the substance to change or the phenomenon of photovoltaicity to occur. Infrared detectors that utilize the effects of light effects need to expose all of the detector elements to the infrared rays, and use the photoelectric effect to generate electrical signals to detect infrared rays. However, since the efficiency of converting light into electricity by the photoelectric effect is low in the case where the detecting element is entirely exposed to infrared rays, the infrared detector can detect only infrared rays having a large energy density, and the sensitivity is low.

In view of this, it is necessary to provide a highly sensitive infrared detector.

An infrared detector comprising: a first electrode; a second electrode; and a detecting element disposed between the first electrode and the second electrode; wherein the detecting element comprises a covering structure, the covering structure covers The detecting element is divided into a light-emitting area and a non-illuminated area, the first electrode is electrically connected to the illumination area of the detecting element, and the second electrode is electrically connected to the non-illuminated area of the detecting element. .

An infrared detector includes: a first electrode; a second electrode; and a detecting element having a thermoelectric effect disposed between the first electrode and the second electrode; wherein the detecting element includes an illumination region And a non-illuminated area, the first electrode is electrically connected to an illumination area of the detecting element, the second electrode is electrically connected to a non-illuminated area of the detecting element, and the illumination area is configured to receive an infrared light signal, The non-illuminated area is used to isolate infrared light signals.

Compared with the prior art, the detecting element of the infrared detector provided by the present invention is divided into For the illuminated area and the non-illuminated area, the infrared light is absorbed by the illumination area and the high temperature is generated, and a temperature difference is formed between the non-illuminated area and the non-illuminated area. With the principle of temperature difference power generation, a large potential difference signal can be generated even in the case of a small illumination intensity or The current signal, therefore, can be infrared light with a lower energy density, and therefore, the infrared detector has a higher sensitivity.

10,20,30,40,50,60‧‧‧Infrared detector

102,502,602‧‧‧first electrode

104,204,504,604‧‧‧second electrode

106,206,306,406,506,606‧‧‧Detection elements

1062,3062,4062,5062‧‧‧Lighting area

1064,4064,5064‧‧‧Non-illuminated area

108,208,408,608‧‧‧ Coverage structure

112‧‧‧Voltage test table

114‧‧‧current test table

4082‧‧‧Upper substrate

4084‧‧‧lower substrate

4086‧‧‧Opening area

110,310‧‧‧Base

510‧‧‧Insulator

5102‧‧‧ first surface

5104‧‧‧ second surface

500‧‧‧Reflective film

6082‧‧‧first cover

6084‧‧‧second cover

FIG. 1 is a schematic structural view of an infrared detector provided by a first embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view taken along line II-II of Fig. 1.

Figure 3 is a schematic diagram of the infrared detector of Figure 1 when it is in operation.

Fig. 4 is a graph showing the relationship between the temperature of the illumination region and the irradiation time of the infrared detector of Fig. 1 under the irradiation of infrared rays of different intensities.

Fig. 5 is a graph showing the relationship between the potential difference between the first electrode and the second electrode and the irradiation time of the infrared detector of Fig. 1 under irradiation of infrared rays of different intensities.

FIG. 6 is a schematic structural view of an infrared detector provided by a second embodiment of the present invention.

Fig. 7 is a schematic cross-sectional view taken along line VII-VII of Fig. 6.

FIG. 8 is a schematic structural view of an infrared detector according to a third embodiment of the present invention.

Fig. 9 is a schematic cross-sectional view taken along line IX-IX of Fig. 8.

Figure 10 is a side cross-sectional view of the infrared detector provided by the fourth embodiment of the present invention. Surface map.

Figure 11 is a schematic view showing the structure of the covering structure of the infrared detector in Figure 10.

Figure 12 is a schematic view showing the structure of an infrared detector according to a fifth embodiment of the present invention.

Figure 13 is a side elevational view showing the infrared detector provided by the sixth embodiment of the present invention.

The infrared detector provided by the present technical solution will be described in detail below with reference to the accompanying drawings. In the following embodiments, the same reference numerals are used for the same elements in the different embodiments, and the same elements are used. The different elements or the same elements having different structures are represented by different Arabic numerals.

Referring to FIG. 1 and FIG. 2 together, a first embodiment of the present invention provides an infrared detector 10. The infrared detector 10 includes a first electrode 102, a second electrode 104, a detecting element 106 disposed between the first electrode 102 and the second electrode 104, and a covering structure 108. The infrared detector 10 further includes a substrate 110 disposed on a surface of the substrate 110. The first electrode 102 and the second electrode 104 are electrically connected to the detecting element 106, respectively. The detecting element 106 includes an illumination area 1062 and a non-illuminated area 1064. The overlay structure 108 covers the non-illuminated area 1064.

The substrate 110 is used to support the detecting element 106. It can be understood that the substrate 110 can be omitted when the detecting element 106 is a self-supporting structure. The material of the substrate 110 is an insulating material, which may be glass, ceramic, polymer or wood material. . The material of the substrate 110 may also be a conductive metal material or the like whose surface is coated with an insulating material. Preferably, the material of the substrate 110 should not substantially absorb infrared rays or absorb infrared rays at all. The thickness of the substrate 110 is not limited, and is preferably 1 mm to 2 cm. In the present embodiment, the substrate 110 has a thickness of 5 mm. The detecting element 106 can be disposed directly on the surface of the substrate 110.

The illumination region 1062 of the detecting element 106 is configured to receive infrared rays and convert the infrared energy into thermal energy to increase the temperature of the illumination region 1062, thereby generating a temperature difference between the illumination region 1062 and the non-illumination region 1064, using the thermoelectric difference The effect is that a potential difference is generated between the first electrode 102 and the second electrode 104, and the intensity of the infrared ray can be determined according to the magnitude of the potential difference. The material of the detecting element 106 should satisfy the large temperature difference electric conversion coefficient, have strong infrared absorption performance and have a small heat capacity. The detecting element 106 may be a one-sided structure or a linear structure. Further, the planar structure may include a plurality of micropores forming a network structure. The detecting element 106 can be a carbon nanotube layer, which is a layered structure composed of a plurality of uniformly distributed carbon nanotubes. The carbon nanotube layer includes a plurality of micropores, and thus has a large specific surface area and has strong infrared absorption performance. The carbon nanotubes are absolutely black bodies and therefore have very strong infrared absorption properties. The carbon nanotube layer is a pure carbon nanotube structure. The carbon nanotubes may be selected from one or more of a single-walled carbon nanotube, a double-walled carbon nanotube, and a multi-walled carbon nanotube. Since the single-walled carbon nanotube is semiconducting and the thermoelectric conversion is relatively large, the carbon nanotube layer is preferably a single-walled carbon nanotube layer. The carbon nanotubes in the carbon nanotube layer can be tightly bonded by a Van der Waals attractive force. The carbon nanotubes in the carbon nanotube layer are disordered or ordered. The disordered arrangement here means that the arrangement direction of the carbon nanotubes is irregular, and the ordered arrangement here means that at least most of the arrangement of the carbon nanotubes has a certain regularity. Specifically, when the carbon nanotube layer includes a disorderly arranged carbon nanotube, the carbon nanotubes are entangled or isotropically aligned; when the carbon nanotube layer includes an ordered arrangement of carbon nanotubes, The carbon nanotubes are arranged in a preferred orientation in one direction or in a plurality of directions. The carbon nanotube layer has a thickness of from 100 nm to 5 mm. The carbon nanotube layer may have a heat capacity per unit area of less than 2 x 10 ^-4 joules per square centimeter Kelvin, and may even be less than or equal to 1.7 x 10 ^-6 joules per square centimeter Kelvin. Since the carbon nanotube has a small heat capacity, the carbon nanotube layered structure has a faster heat response speed, that is, a rapid temperature rise after absorbing infrared energy.

The detecting element 106 can also be a layer of carbon nanotube composite material formed from the above-described carbon nanotube layer and other materials. The carbon nanotube composite layer includes the above-mentioned carbon nanotube layer and a matrix material penetrating into the carbon nanotube layer. The base material is a polymer material, which may be cellulose, polyethylene terephthalate, acrylic resin, polyethylene, polypropylene, polystyrene, polyvinyl chloride, phenolic resin, epoxy. One or more of a resin, a polyaniline, a silicone, a polyester, and the like.

The carbon nanotube layer may include at least one layer of carbon nanotube film. When the carbon nanotube layer includes a plurality of layers of carbon nanotube film, the multilayered carbon nanotube film may be stacked or arranged in parallel. The carbon nanotube film may be a carbon nanotube film. The carbon nanotube film is a carbon nanotube film obtained by directly pulling from a carbon nanotube array. Each nanocarbon film is a self-supporting structure composed of several carbon nanotubes. The plurality of carbon nanotubes are arranged in a preferred orientation along substantially the same direction. The preferred orientation means that the majority of the carbon nanotubes in the carbon nanotube film extend substantially in the same direction. Moreover, the overall direction of extension of the majority of the carbon nanotubes is substantially parallel to the surface of the carbon nanotube film. Further, most of the carbon nanotubes in the carbon nanotube membrane are connected end to end by van der Waals force. Specifically, each of the carbon nanotubes in the majority of the carbon nanotube membranes extending in the same direction and the carbon nanotubes adjacent in the extending direction are connected end to end by van der Waals force. Of course, there are a few randomly arranged carbon nanotubes in the carbon nanotube film, and these carbon nanotubes do not significantly affect the overall orientation of most of the carbon nanotubes in the carbon nanotube film. The self-supporting carbon nanotube film does not require a large-area carrier support, but can maintain a self-membrane state as long as the supporting force is provided on both sides, that is, the carbon nanotube film is placed (or fixed on) When the two supports are disposed at a fixed distance, the carbon nanotube film located between the two supports can be suspended to maintain the self-membrane state. The self-supporting is mainly achieved by the presence of continuous carbon nanotubes extending through the end-to-end extension of the van der Waals force in the carbon nanotube film.

Specifically, most of the carbon nanotube membranes extending substantially in the same direction in the same direction are not absolutely linear, and may be appropriately bent; or may not be completely aligned in the extending direction, and may be appropriately deviated from the extending direction. Therefore, partial contact between the carbon nanotubes juxtaposed in the majority of the carbon nanotubes extending substantially in the same direction of the carbon nanotube film cannot be excluded.

The thickness of the carbon nanotube film is 0.5 nm to 100 μm, and the width is related to the size of the carbon nanotube array for pulling the carbon nanotube film, and the length is not limited.

When the carbon nanotube layered structure adopts a carbon nanotube film, it may comprise a stacked multi-layer carbon nanotube film, and the carbon nanotubes in the adjacent two layers of carbon nanotube film A cross angle α is formed along the axial direction of the carbon nanotubes in each layer, and α is greater than or equal to 0 degrees and less than or equal to 90 degrees (0° ≦ α ≦ 90°). a gap is formed between the plurality of carbon nanotube films or between adjacent carbon nanotubes in a carbon nanotube film, thereby forming a plurality of micropores in the carbon nanotube structure. The pores have a pore size of less than about 10 microns.

The carbon nanotube membrane may also be a carbon nanotube flocculation membrane. The carbon nanotube flocculation membrane is a carbon nanotube membrane formed by a flocculation method. The carbon nanotube flocculation membrane comprises carbon nanotubes which are intertwined and uniformly distributed. The carbon nanotubes are attracted and entangled with each other by van der Waals force to form a network structure. The carbon nanotube flocculation membrane is isotropic. The length and width of the carbon nanotube film are not limited. Since the carbon nanotubes are intertwined in the carbon nanotube flocculation membrane, the carbon nanotube flocculation membrane has good flexibility and is a self-supporting structure, which can be bent and folded into any shape without breaking. . The area and thickness of the carbon nanotube film are not limited, and the thickness is from 1 micrometer to 1 millimeter.

The carbon nanotube film may also be a carbon nanotube rolled film formed by rolling an array of carbon nanotubes. The carbon nanotube rolled film comprises uniformly distributed carbon nanotubes, and the carbon nanotubes are arranged in the same direction or in different directions. The carbon nanotubes can also be isotropic. The carbon nanotubes in the carbon nanotube rolled film partially overlap each other and are attracted to each other by van der Waals force and tightly combined. The carbon nanotubes in the carbon nanotube rolled film form an angle β with the surface of the growth substrate forming the carbon nanotube array, wherein β is greater than or equal to 0 degrees and less than or equal to 15 Degree (0≦β≦15°). The carbon nanotubes in the carbon nanotube rolled film have different arrangements depending on the manner of rolling. When rolled in the same direction, the carbon nanotubes are arranged in a preferred orientation along a fixed direction. It can be understood that when crushed in different directions, the carbon nanotubes can be arranged in a preferred orientation in a plurality of directions. The carbon nanotube film is not limited in thickness, and is preferably from 1 μm to 1 mm. The area of the carbon nanotube rolled film is not limited, and is determined by the size of the carbon nanotube array that is rolled out of the film. When the size of the carbon nanotube array is large, a large area of the carbon nanotube rolled film can be crushed. In this embodiment, the detecting element 106 is a pure carbon nanotube layer, and the carbon nanotube layer is composed of a single-walled carbon nanotube having a thickness of 1 mm.

The detection element 106 is divided into two regions, an illumination region 1062 and a non-illumination region 1064. The size of the illumination area 1062 and the non-illumination area 1064 is not limited, and the area of the illumination area 1062 may be greater than, less than, or equal to the area of the non-illuminated area 1064. Preferably, the area of the illuminated area 1062 is smaller than the area of the non-illuminated area 1064. The illumination area 1062 is an absorption infrared absorption area that can be directly exposed to infrared rays for absorbing infrared rays. The non-illuminated area 1064 is covered by the cover structure 108 to prevent the non-illuminated area 1064 from absorbing infrared light. In this embodiment, the area of the illumination area 1062 is approximately three-fifths of the detection elements 106, and the area of the non-illuminated area 1064 is approximately two-fifths of the detection elements 106.

Each of the first electrode 102 and the second electrode 104 has a linear or strip-like structure and is disposed at each end of the detecting element 106. The first electrode 102 and the second electrode 104 may be disposed on the surface of the detecting component 106, respectively, and the detecting component 106 The sides are flush. The first electrode 102 and the second electrode 104 may also be disposed on the side of the detecting element 106. The first electrode 102 and the second electrode 104 may each be a conductive film. The material of the conductive film may be metal, alloy, indium tin oxide (ITO), antimony tin oxide (ATO), conductive silver paste, conductive polymer or conductive carbon nanotube. The metal or alloy material may be an alloy of aluminum, copper, tungsten, molybdenum, gold, titanium, rhodium, palladium, iridium or any combination thereof. In this embodiment, the first electrode 102 and the second electrode 104 are respectively formed into a linear structure formed by printing of conductive silver paste, and are formed on the surface of the detecting element 106. The first electrode 102 is located in the illumination region 1062 and the second electrode 104 is located in the non-illuminated region 1064.

The cover structure 108 is used to cover the non-illuminated area 1064 to prevent the non-illuminated area 1064 from absorbing infrared light. The cover structure 108 is sized to ensure that it does not cover the illuminated area of the detector element 106. The material of the covering structure 108 is not limited and may be an insulating material or a conductive material. The material of the covering structure 108 can be selected from a conductive material such as a metal or an insulating material such as plastic or plastic. The metal includes one or more of stainless steel, carbon steel, copper, nickel, titanium, zinc, and aluminum. It will be appreciated that when the material of the cover structure 108 is an insulating material, it can be in direct contact with the detector element 106, which can directly cover the surface of the non-illuminated region 1064 of the detector element 106. When the material of the cover structure 108 is a conductive material, it should be ensured that the cover structure 108 is spaced from the detector element 106 in an insulating arrangement. In this embodiment, the cover structure 108 is a cover body having an accommodating space. The periphery of the cover structure 108 is fixed to the surface of the substrate 110. The non-illuminated area 1064 of the detecting component 106 is disposed inside the accommodating space of the covering structure 108 and is spaced apart from the covering structure 108 by a certain distance. Set. The fixing structure of the covering structure 108 is not limited, and can be fixed by fastening, clamping, bolting, bonding, riveting, etc. In the embodiment, the covering structure 108 is fixed to the base 110 through four screw holes (not shown). on. Since the cover structure 108 is spaced apart from the detecting element 106, the material of the cover structure 108 may be a conductive material.

The infrared detector 20 can further include a first electrode lead (not shown) and a second electrode lead (not shown). The first electrode lead is electrically connected to the first electrode 102. The second electrode lead is electrically connected to the second electrode 104. A portion of the second electrode lead is located inside the cover structure 108 and a portion extends to the outside of the cover structure 108 to facilitate electrical connection of the second electrode 104 to the outside.

The infrared detector 10 can further include a voltage test table 112 that forms a loop with the first electrode 102, the detecting element 106, and the second electrode 104. The voltage test table 112 is for detecting a potential difference between the first electrode 102 and the second electrode 104. The infrared detector 10 can further include a current test table 114 that forms a loop with the first electrode 102, the detecting element 106, and the second electrode 104. The current test table 114 is used to detect the current in the loop.

Referring to FIG. 3, the infrared detector 10 works as follows: when the illumination area 1062 of the detection element 106 receives the illumination of the infrared ray R, the illumination area 1062 of the detection element 106 absorbs the energy of the infrared ray, and the temperature rises, and the non-illuminated area Since 1064 does not absorb the energy of infrared rays, the temperature does not change. Therefore, a temperature difference is generated between the illumination region 1062 and the non-illumination region 1064. Therefore, a potential difference is generated between the first electrode 102 and the second electrode 104 according to the thermoelectric effect. Detecting component In the case where the area of the illumination region 1062 is constant, the magnitude of the potential difference between the first electrode 102 and the second electrode 104 is proportional to the energy density of the infrared rays.

In this embodiment, when 10 infrared light irradiation regions 1062 of different energy densities are used, the energy density of the 10 infrared rays is 5.709mW/cm2, 25.394mW/cm2, 45.079mW/cm2, 64.764mW/cm2, and 84.449mW, respectively. /cm2, 104.134 mW/cm2, 123.819 mW/cm2, 143.504 mW/cm2, 163.189 mW/cm2. 4 is a graph showing the relationship between the temperature of the illumination region 1062 and the illumination time. As can be seen from FIG. 4, when two infrared radiation illumination regions 1062 of different energy densities are switched, the temperature response speed of the illumination region 1062 is very fast and increases. The temperature is also relatively high. Fig. 5 is a graph showing the relationship between the potential difference between the first electrode and the second electrode and the irradiation time. Since the carbon nanotube layer is a hole conducting layer, the potential difference between the first electrode 102 and the second electrode 104 is a negative value, that is, the potential of the first electrode 102 is smaller than the potential of the second electrode 104, when the time is When the infrared illuminating illumination region 1062 is stopped at 600 seconds, the potential of the first electrode 102 is less than the potential of the second electrode 104 and rapidly returns to zero. As can be seen from FIG. 5, in order to change the intensity of the infrared ray R, the potential difference between the first electrode 102 and the second electrode 104 also changes rapidly and significantly, even in the case where the infrared energy density is small. It can produce a large potential difference and has a strong sensitivity.

The detecting element 106 of the infrared detector 10 provided by the present invention is divided into an illumination area 1062 and a non-illuminated area 1064, which absorbs infrared rays through the illumination area 1062 and generates a high temperature, and forms a temperature difference with the non-illuminated area 1064, and generates electricity by using a temperature difference. In principle, in the case where the illumination intensity is small, a large potential difference signal or a current signal can be generated, and therefore, infrared rays having a small energy density can be used. Therefore, the infrared detector 10 has high sensitivity.

Referring to FIG. 6 and FIG. 7, a second embodiment of the present invention provides an infrared detector 20. The infrared detector 20 provided in this embodiment is different from the infrared detector 10 provided in the first embodiment in that the cover structure 208 is different from the cover structure 108 of the first embodiment, so that the infrared detector of the embodiment 20 does not require a separate substrate.

The cover structure 208 is a U-shaped frame having two parallel spaced cover plates and an open receiving space between the two cover plates. The non-illuminated area 2064 of the detecting element 206 is disposed in the accommodating space of the U-shaped frame and is attached to the inner surface of one cover of the covering structure 208 while being spaced apart from the other cover. The second electrode 204 is also disposed inside the U-shaped frame. The overall shape of the cover structure 208 is not limited and may be a cube, a cylinder, a polygon or an ellipsoid or the like. In this embodiment, the cover structure 208 is a rectangular parallelepiped structure.

Referring to FIG. 8 and FIG. 9, a third embodiment of the present invention provides an infrared detector 30. The infrared detector 30 provided in this embodiment is different from the infrared detector 10 provided in the first embodiment in that the infrared detector 30 further includes a reflective film 500.

The reflective film 500 is disposed between the illumination region 3062 of the detecting component 306 and the substrate 310 for reflecting heat and infrared rays generated by the illumination region 3062 of the detecting component 306 to prevent the heat and part of the infrared energy from being absorbed by the substrate 310. Affects the sensitivity of the infrared detector 30. The reflective film 500 has a high reflection efficiency for infrared rays and far infrared rays. The material of the reflective film 500 is an insulating material and may be TiO ₂ -Ag-TiO ₂ , ZnS-Ag-ZnS, AINO-Ag-AIN, Ta ₂ O ₃ -SiO ₂ or Nb ₂ O ₃ -SiO ₂ . The reflective film 500 is formed on the surface of the substrate 310 by coating or sputtering. The thickness of the reflective film 500 is not limited. In the embodiment, the reflective film 500 has a thickness of 10 micrometers to 500 micrometers.

Referring to Figures 10 and 11, a fourth embodiment of the present invention provides an infrared detector 40. The infrared detector 40 provided in this embodiment is different from the infrared detector 10 provided in the first embodiment in that the covering structure 408 of the present embodiment is different from the covering structure 108 of the first embodiment, so that the embodiment The infrared detector 40 does not require a separate substrate.

The cover structure 408 is a housing having a hollow structure, and the detecting component 406 is disposed inside the cover structure 408. The cover structure 408 includes an aperture region 4068 through which the illumination region 4062 of the detection element 406 is disposed and can receive infrared illumination through the aperture region 4068. The non-illuminated area 4064 of the detecting element 406 is disposed inside the covering structure 408 and covered by the covering structure 408, that is, the covering structure 408 prevents the non-illuminated area 4064 when the infrared detector 40 is disposed in the infrared environment. Accept the light. The overall shape of the covering structure 408 is not limited, and may be a hollow cube, a sphere or a cylinder, or the like.

Specifically, in this embodiment, referring to FIG. 11, the cover structure 408 is a stand. The square structure comprises an upper substrate 4082, a lower substrate 4084 and four side plates (not shown). The detecting component 406 is disposed on a surface of the lower substrate 4084 and faces the upper substrate 4082. The upper substrate 4082 includes an opening area 4068, and the area of the opening area 4084 is smaller than the upper substrate 4082. The aperture area 4068 is facing the illumination area 4062 of the detection element 406. The opening area 4084 can be a large opening or a plurality of small openings. In this embodiment, the opening area 4084 is a grid structure including a plurality of meshes. The illumination region 4062 of the detecting element 406 receives infrared radiation through the plurality of meshes.

Referring to FIG. 12, a fifth embodiment of the present invention provides an infrared detector 50. The infrared detector 50 includes a first electrode 502, a second electrode 504, a detecting element 506 disposed between the first electrode 502 and the second electrode 504, and an insulator 510. The detecting element 506 is bent to form an illumination area 5062 and a non-illumination area 5064. The angle between the illumination area 5062 and the non-illumination area 5064 is less than or equal to 90 degrees, such as bending into a U-shaped or L-shaped or U-shaped. The shape of any angle between the L and the L. At this time, when the infrared ray illuminates the illumination area 5062 of the detecting element 506, the non-illuminated area 5064 is blocked by the illumination area 5062, so that the infrared ray cannot illuminate the non-illuminated area. The insulator 510 is disposed between the illumination region 5062 and the non-illuminated region 5064 and is shaped to match the curved shape of the detector element 506. When the detecting element 506 cannot maintain a certain shape by itself, the insulator 510 can serve as a substrate to support the detecting element 506 and the first and second electrodes and the like. In this embodiment, the insulator 510 is a base structure, and the first electrode 502, the second electrode 504, and the detecting component 506 are disposed on the insulating layer. The surface of the body 510.

The insulator 510 includes a first surface 5102 and a second surface 5104. An angle α is formed between the first surface 5102 and the second surface 5104, and α is greater than or equal to 0 degrees and less than or equal to 90 degrees. α is greater than 0 degrees and less than 90 degrees. When α is equal to 0 degrees, the first surface 5102 and the second surface 5104 are two opposite surfaces, that is, it can be understood that the second surface 5104 is the back surface of the first surface 5102, and the detecting element 506 can be bent into U. The first surface 5102 and the second surface 5104 of the insulator 510 are disposed. In this embodiment, α is equal to 45 degrees. The illumination region 5062 of the detection element 506 is disposed on the first surface 5102 of the insulator 510, and the non-illumination region 5064 is disposed on the second surface 5104 of the insulator 510.

The infrared detector 50 provided in this embodiment can directly illuminate the illumination region 5062 by using the infrared light R. The illumination region 5062 is disposed on the first surface 5102 of the insulator 510, and the non-illumination region 5064 is disposed on the insulator 510. The two surfaces 5104, α formed between the first surface 5102 and the second surface 5104 are greater than or equal to 0 degrees and less than or equal to 90 degrees, and therefore, the infrared light does not illuminate the non-illuminated region 5064.

Referring to FIG. 13, a sixth embodiment of the present invention provides an infrared detector 60. The infrared detector 60 provided in this embodiment is different from the infrared detector 10 provided in the first embodiment in that the cover structure 608 is different from the cover structure 108 of the first embodiment, so that the infrared detector of the embodiment 60 does not require a separate substrate.

The cover structure 608 is a U-shaped outer casing having two first covers spaced apart in parallel The plate 6082, the second cover 6084 and an open accommodating space between the two covers. The U-shaped outer casing has a U-shaped inner surface, and the detecting element 606 is attached to the U-shaped inner surface of the covering structure 608, so that the detecting element 606 is bent into a U-shaped structure. The first electrode 602 and the second electrode 604 are disposed at two ends of the detecting element 606. Since the detecting element 606 is bent into a U-shaped structure, the first electrode 602 and the second electrode 604 are both located in the overall structure of the infrared detector 60. One end is beneficial to the instrument electrical connection settings. At least one of the first cover plate 6082 and the second cover plate 6084 includes a plurality of through holes, so that the partial detecting elements 606 disposed on the surface of the first cover plate 6082 or the surface of the second cover plate 6084 receive infrared rays. When the first cover plate 6082 includes a plurality of through holes, the detecting element 606 disposed on the surface of the first cover plate 6082 can receive infrared rays; when the second cover plate 6084 includes a plurality of through holes, the first cover plate 6084 is disposed at the first The second cover 6084 surface detecting element 606 can receive infrared rays. In this embodiment, the first cover plate 6082 and the second cover plate 6084 each include a plurality of through holes. The cover structure 608 includes the overall shape of the cover structure 208, and may be a cube, a cylinder, a polygon or an ellipsoid, or the like. In this embodiment, the cover structure 208 is a rectangular parallelepiped structure having an opening.

When the infrared detector 60 provided in this embodiment is used, when the infrared ray is propagating toward the first cover plate 6082, since the first cover plate 6082 includes a plurality of through holes, a part of the surface of the first cover plate 6082 is detected. The element 606 is an illumination area, and the partial detecting element 606 disposed on the side of the U-shaped casing and the surface of the second cover 6084 is a non-illuminated area; when the infrared ray is propagating toward the second cover 6084, since the second cover 6084 includes a plurality of passes a hole is disposed in the second cover 6084 The partial detecting element 606 of the surface is an illumination area, and the partial detecting elements 606 disposed on the side of the U-shaped housing and the surface of the first cover 6082 are non-illuminated areas. The infrared detector 60 provided in this embodiment can detect infrared rays from different directions and has a large detection range.

It can be understood that the infrared detector provided by the present invention can generate a potential difference when detecting infrared rays, so the infrared detector can also be used as a photovoltaic cell.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10‧‧‧Infrared detector

102‧‧‧First electrode

1062‧‧‧Lighting area

108‧‧‧ Coverage structure

110‧‧‧Base

112‧‧‧Voltage test table

114‧‧‧current test table

Claims (21)

An infrared detector includes: a first electrode; a second electrode; and a detecting element disposed between the first electrode and the second electrode; and the improvement is that the infrared detector further comprises a covering structure, The cover structure covers a portion of the detecting element to divide the detecting element into an illumination area and a non-illuminated area, the first electrode is electrically connected to the illumination area of the detecting element, and the second electrode and the detecting element are not The light area is electrically connected. The infrared detector of claim 1, wherein the detecting element comprises a carbon nanotube layer, the carbon nanotube layer comprising a plurality of uniformly distributed carbon nanotube tubes. The infrared detector according to claim 2, wherein the carbon nanotubes in the carbon nanotube layer are connected end to end and are arranged in a preferred orientation in the same direction. The infrared detector according to claim 2, wherein the carbon nanotube layer is a pure carbon nanotube structure composed of a plurality of single-walled carbon nanotubes. The infrared detector according to claim 2, wherein the carbon nanotube layer has a heat capacity per unit area of 2 × 10 ^-4 Joules per square centimeter Kelvin. The infrared detector according to claim 1, wherein the detecting element comprises a carbon nanotube composite material layer, and the carbon nanotube composite material layer comprises a carbon nanotube layer and a polymer material permeating the nanometer. In the carbon nanotube layer. The infrared detector of claim 6, wherein the polymer material is a fiber One or more of vitamins, polyethylene terephthalate, acrylic resin, polyethylene, polypropylene, polystyrene, polyvinyl chloride, phenolic resin, epoxy resin, polyaniline, silicone, and polyester . The infrared detector of claim 1, wherein the area of the illumination area is smaller than the area of the non-illuminated area. The infrared detector of claim 1, wherein the first electrode and the second electrode are linear or strip-shaped structures respectively disposed at two ends of the detecting element and respectively respectively connected to two sides of the detecting element level. The infrared detector of claim 1, further comprising a substrate, the detecting element being disposed on a surface of the substrate. The infrared detector of claim 10, further comprising a reflective film disposed between the illumination region and the substrate. The infrared detector of claim 10, wherein the covering structure is fixed to the surface of the substrate, and the covering structure comprises an accommodating space. The infrared detector of claim 12, wherein the non-illuminated area of the detecting element is disposed in an accommodating space of the covering structure. The infrared detector of claim 10, wherein the cover structure directly covers a surface of the non-illuminated area. The infrared detector of claim 1, wherein the covering structure is a U-shaped frame, the covering structure comprises two spaced cover plates and an open receiving space between the two cover plates. The non-illuminated area is disposed inside the closed structure through the open end. The infrared detector of claim 1, wherein the covering structure is a housing having a hollow structure, and the detecting component is disposed inside the covering structure, The cover structure includes an aperture area to which the illumination area of the detection element is disposed. The infrared detector of claim 1, wherein the covering structure is a U-shaped outer casing, the covering structure comprises a spaced first cover, a second cover and an open capacity between the two covers The accommodating space includes a U-shaped inner surface, the detecting element is attached to the inner surface, and at least one of the first cover and the second cover includes a plurality of through holes. The infrared detector of claim 17, wherein the first cover and the second cover each comprise a plurality of through holes. An infrared detector comprising: a first electrode; a second electrode; and a detecting element having a thermoelectric effect disposed between the first electrode and the second electrode; and the improvement is that the detecting element comprises a An illumination region electrically connected to the illumination region of the detecting element, the second electrode being electrically connected to the non-illuminated region of the detecting element, the illumination region for receiving infrared light The signal, the non-illuminated area is used to isolate the infrared light signal. The infrared detector of claim 19, wherein the infrared detector further comprises a substrate, the substrate comprising a first surface and a second surface, the first surface forming an angle α with the second surface, The α is greater than or equal to 0 degrees and less than or equal to 90 degrees, the illumination region is disposed on the first surface of the substrate, and the non-illuminated region is disposed on the second surface of the substrate. The infrared detector of claim 19, wherein the light of the detecting element The illuminated area and the non-illuminated area are formed by bending the detecting element, and the angle between the illuminated area and the non-illuminated area is less than or equal to 90 degrees.