TWI410017B - Processing device and processing system utilizing the same - Google Patents
Processing device and processing system utilizing the same Download PDFInfo
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- TWI410017B TWI410017B TW99121425A TW99121425A TWI410017B TW I410017 B TWI410017 B TW I410017B TW 99121425 A TW99121425 A TW 99121425A TW 99121425 A TW99121425 A TW 99121425A TW I410017 B TWI410017 B TW I410017B
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Abstract
Description
本發明係有關於一種處理裝置,特別是有關於一種具有過壓保護功能的處理裝置。The present invention relates to a processing apparatus, and more particularly to a processing apparatus having an overvoltage protection function.
隨著科技的進步,許多電路均被整合在一積體電路中,以縮小電子產品的體積。具有積體電路的電子產品均具有重量輕及體積薄等優點。目前許多類型的數位或類比電路均可整合成積體電路型態,其中包括複雜的微處理器、運算放大器以及被動元件等。As technology advances, many circuits are integrated into an integrated circuit to reduce the size of electronic products. Electronic products with integrated circuits have the advantages of light weight and thin volume. Many types of digital or analog circuits are currently integrated into integrated circuit types, including complex microprocessors, operational amplifiers, and passive components.
然而,有些積體電路對於電源電壓的要求十分嚴格。一旦所接收的電壓大於所能承受的電壓時,就可能會對積體電路造成損壞。However, some integrated circuits have strict requirements on the power supply voltage. Once the received voltage is greater than the voltage that can be withstood, it can cause damage to the integrated circuit.
本發明提供一種處理裝置,耦接一驅動裝置。驅動裝置根據一切換信號組,對一儲壓裝置進行充電。因此,儲壓裝置便可提供一輸出電壓。本發明之處理裝置包括,一過壓保護模組、一第一比較模組、一第二比較模組以及一邏輯模組。過壓保護模組用以避免輸出電壓大於一臨界電壓。當輸出電壓大於該臨界電壓時,第一比較模組禁能過壓保護模組。當輸出電壓小於一參考電壓時,第二比較模組致能過壓保護模組。當過壓保護模組被禁能時,邏輯模組停止提供切換信號組,使驅動裝置停止對儲壓裝置充電。The invention provides a processing device coupled to a driving device. The driving device charges a pressure accumulating device according to a switching signal group. Therefore, the pressure accumulator can provide an output voltage. The processing device of the present invention includes an overvoltage protection module, a first comparison module, a second comparison module, and a logic module. The overvoltage protection module is used to prevent the output voltage from being greater than a threshold voltage. When the output voltage is greater than the threshold voltage, the first comparison module disables the overvoltage protection module. When the output voltage is less than a reference voltage, the second comparison module enables the overvoltage protection module. When the overvoltage protection module is disabled, the logic module stops providing the switching signal group, so that the driving device stops charging the pressure accumulating device.
本發明另提供一種處理系統,包括一儲壓裝置、一驅動裝置以及一處理裝置。當儲壓裝置被充電時,則可提供一輸出電壓。驅動裝置根據一切換信號組,對儲壓裝置進行充電。處理裝置耦接驅動裝置,並包括一過壓保護模組、一第一比較模組、一第二比較模組以及一邏輯模組。過壓保護模組用以避免輸出電壓大於一臨界電壓。當輸出電壓大於該臨界電壓時,第一比較模組禁能過壓保護模組。當輸出電壓小於一參考電壓時,第二比較模組致能過壓保護模組。當過壓保護模組被禁能時,邏輯模組停止提供切換信號組,使驅動裝置停止對儲壓裝置充電。The invention further provides a processing system comprising a pressure accumulating device, a driving device and a processing device. When the pressure accumulator is charged, an output voltage can be provided. The driving device charges the pressure accumulating device according to a switching signal group. The processing device is coupled to the driving device and includes an overvoltage protection module, a first comparison module, a second comparison module, and a logic module. The overvoltage protection module is used to prevent the output voltage from being greater than a threshold voltage. When the output voltage is greater than the threshold voltage, the first comparison module disables the overvoltage protection module. When the output voltage is less than a reference voltage, the second comparison module enables the overvoltage protection module. When the overvoltage protection module is disabled, the logic module stops providing the switching signal group, so that the driving device stops charging the pressure accumulating device.
為讓本發明之特徵和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下:In order to make the features and advantages of the present invention more comprehensible, the preferred embodiments are described below, and are described in detail with reference to the accompanying drawings.
第1圖為本發明之處理系統之一可能實施例。如圖所示,處理系統100包括,儲壓裝置110、驅動裝置130以及處理裝置150。處理裝置150耦接驅動裝置130,並可提供切換信號組SCG 。本發明並不限制處理裝置150的種類。在一可能實施例中,處理裝置150係為一脈寬調變(Pulse Width Modulation;PWM)裝置。Figure 1 is a possible embodiment of a processing system of the present invention. As shown, the processing system 100 includes a pressure accumulator 110, a drive 130, and a processing device 150. The processing device 150 is coupled to the driving device 130 and can provide a switching signal group S CG . The invention does not limit the type of processing device 150. In a possible embodiment, the processing device 150 is a Pulse Width Modulation (PWM) device.
驅動裝置130根據切換信號組SCG ,對儲壓裝置110進行充電。在本實施例中,驅動裝置130可根據切換信號組SCG ,產生相位信號予儲壓裝置110。本發明並不限制驅動裝置130的內容架構,只要可對儲壓裝置110進行充電的架構,均可作為驅動裝置130。The drive device 130 charges the pressure accumulating device 110 based on the switching signal group S CG . In this embodiment, the driving device 130 can generate a phase signal to the pressure accumulating device 110 according to the switching signal group S CG . The present invention does not limit the content architecture of the driving device 130, and any architecture that can charge the pressure accumulating device 110 can be used as the driving device 130.
當儲壓裝置110被充電時,則可提供輸出電壓VOUT 予一負載(未顯示)。在本實施例中,儲壓裝置110係為電容111,但並非用以限制本發明。本領域之技術人員可利用其 它儲壓元件取代電容111。When the pressure accumulator 110 is charged, the output voltage V OUT can be supplied to a load (not shown). In the present embodiment, the pressure accumulating device 110 is a capacitor 111, but is not intended to limit the present invention. Those skilled in the art can replace the capacitor 111 with other pressure storage elements.
如第1圖所示,處理裝置150包括,比較模組151、153、過壓保護(over voltage protection;OVP)模組155以及邏輯模組157。當輸出電壓VOUT 大於一臨界電壓時,比較模組151禁能過壓保護模組155。另外,當輸出電壓VOUT 小於一參考電壓時,比較模組153致能過壓保護模組155。在本實施例中,臨界電壓大於參考電壓。As shown in FIG. 1, the processing device 150 includes comparison modules 151, 153, an over voltage protection (OVP) module 155, and a logic module 157. When the output voltage V OUT is greater than a threshold voltage, the comparison module 151 disables the overvoltage protection module 155. In addition, the comparison module 153 enables the overvoltage protection module 155 when the output voltage V OUT is less than a reference voltage. In this embodiment, the threshold voltage is greater than the reference voltage.
在一可能實施例中,當過壓保護模組155被禁能時,邏輯模組157停止提供切換信號組SCG ,使驅動裝置130停止對儲壓裝置110進行充電。因此,輸出電壓VOUT 便開始下降。在本實施例中,當輸出電壓VOUT 小於一參考電壓時,比較模組153致能過壓保護模組155。In a possible embodiment, when the overvoltage protection module 155 is disabled, the logic module 157 stops providing the switching signal group S CG to stop the driving device 130 from charging the pressure accumulating device 110. Therefore, the output voltage V OUT starts to drop. In this embodiment, when the output voltage V OUT is less than a reference voltage, the comparison module 153 enables the overvoltage protection module 155.
當過壓保護模組155被致能,並且一預設條件成立時,邏輯模組157提供切換信號組SCG 。在一可能實施例中,該預設條件與溫度、電流有關,但並非用以限制本發明。在另一可能實施例中,該預設條件係與儲壓裝置110、驅動裝置130或是處理裝置150的溫度或電流有關。When the overvoltage protection module 155 is enabled and a predetermined condition is met, the logic module 157 provides the switching signal group S CG . In a possible embodiment, the preset condition is related to temperature and current, but is not intended to limit the invention. In another possible embodiment, the preset condition is related to the temperature or current of the pressure accumulating device 110, the driving device 130 or the processing device 150.
在一可能實施例中,當驅動裝置130的周圍溫度小於一預設值時,則該預設條件成立。因此,若過壓保護模組155為致能狀態時,則邏輯模組157提供切換信號組SCG 予驅動裝置130。在其它實施例中,當流經儲壓裝置110的電流小於一預設值時,則表示該預設條件成立。In a possible embodiment, when the ambient temperature of the driving device 130 is less than a preset value, the preset condition is established. Therefore, if the overvoltage protection module 155 is in an enabled state, the logic module 157 provides the switching signal group S CG to the driving device 130. In other embodiments, when the current flowing through the pressure accumulating device 110 is less than a predetermined value, it indicates that the preset condition is established.
第2圖為本發明之驅動裝置之一可能實施例。如圖所示,驅動裝置130包括,電晶體210、230以及儲能單元250。電晶體210與230串聯於操作電壓VDD與GND之間,並分別由切換信號組SCG 中之切換信號SC1 與SC2 所控制。儲能單元250耦接於電晶體210與儲壓裝置110之間。Figure 2 is a possible embodiment of a driving device of the present invention. As shown, the drive device 130 includes transistors 210, 230 and an energy storage unit 250. The transistors 210 and 230 are connected in series between the operating voltages VDD and GND and are controlled by the switching signals S C1 and S C2 in the switching signal group S CG , respectively. The energy storage unit 250 is coupled between the transistor 210 and the pressure accumulating device 110.
如圖所示,電晶體210之閘極接收切換信號SC1 ,其汲極接收操作電壓VDD,其源極耦接電晶體230之汲極以及儲能單元250。在一可能實施例中,儲能單元250可為一電感。As shown, the gate of the transistor 210 receives the switching signal S C1 , the drain of which receives the operating voltage VDD , the source of which is coupled to the drain of the transistor 230 and the energy storage unit 250 . In a possible embodiment, the energy storage unit 250 can be an inductor.
另外,在本實施例中,電晶體210係為一NMOS電晶體,但並非用以限制本發明。本領域之技術人員可利用PMOS電晶體,或是其它種類的電晶體(如FET、BJT)取代電晶體210。In addition, in the present embodiment, the transistor 210 is an NMOS transistor, but is not intended to limit the present invention. Those skilled in the art can replace the transistor 210 with a PMOS transistor, or other kinds of transistors such as FETs, BJTs.
驅動裝置130的電晶體230之閘極接收切換信號SC2 ,其汲極耦接電晶體210之源極與儲能單元250,其源極接收操作電壓GND。藉由控制切換信號SC1 及SC2 ,便可產生一相位信號予儲壓裝置110。The gate of the transistor 230 of the driving device 130 receives the switching signal S C2 , the drain of which is coupled to the source of the transistor 210 and the energy storage unit 250 , and the source thereof receives the operating voltage GND . By controlling the switching signals S C1 and S C2 , a phase signal can be generated to the voltage accumulator 110.
在本實施例中,操作電壓GND小於操作電壓VDD。同樣地,本領域之技術人員可利用PMOS電晶體,或是其它種類的電晶體(如FET、BJT)取代電晶體230。In the present embodiment, the operating voltage GND is smaller than the operating voltage VDD. Similarly, those skilled in the art can utilize PMOS transistors, or other types of transistors (such as FETs, BJTs) in place of transistor 230.
第3圖為本發明之比較模組151及153之一可能實施例。如圖所示,比較模組151係由比較器310所構成,而比較模組153包括比較器330及350。在一可能實施例中,當輸出電壓VOUT 未大於臨界電壓REF1.2時,則比較器310的輸出信號O310 為第一位準(如高位準)。Figure 3 is a possible embodiment of one of the comparison modules 151 and 153 of the present invention. As shown, the comparison module 151 is comprised of a comparator 310, and the comparison module 153 includes comparators 330 and 350. In a possible embodiment, when the output voltage V OUT is not greater than the threshold voltage REF1.2, the output signal O 310 of the comparator 310 is at a first level (eg, a high level).
當輸出電壓VOUT 大於臨界電壓REF1.2時,則比較器310的輸出信號O310 由第一位準變化至第二位準(如低位準)。因此,便可禁能過壓保護模組155。當過壓保護模組155為禁能狀態時,邏輯模組157停止提供切換信號組SCG 予驅動裝置130。When the output voltage V OUT is greater than the threshold voltage REF1.2, the output signal O 310 of the comparator 310 changes from the first level to the second level (eg, low level). Therefore, the overvoltage protection module 155 can be disabled. When the overvoltage protection module 155 is in the disabled state, the logic module 157 stops providing the switching signal group S CG to the driving device 130.
另外,當輸出電壓VOUT 大於參考電壓REF時,則比較器330的輸出信號O330 為第二位準(如低位準)。比較器350將比較器330的輸出信號O330 與參考信號ST 作比較。由於比較器330的輸出信號O330 為第二位準(如0V),故比較器350的輸出信號comp為第二位準。In addition, when the output voltage V OUT is greater than the reference voltage REF, the output signal O 330 of the comparator 330 is at a second level (eg, a low level). Comparator 350 compares output signal O 330 of comparator 330 with reference signal S T . Since the output signal O 330 of the comparator 330 is at the second level (eg, 0V), the output signal comp of the comparator 350 is at the second level.
在本實施例中,參考信號ST 係為一三角波。在一可能實施例中,參考信號ST 的波峰值(如2V)與波谷值(如1V)均大於第二位準(如0V)。In this embodiment, the reference signal S T is a triangular wave. In a possible embodiment, the peak value (eg, 2V) and the valley value (eg, 1V) of the reference signal S T are both greater than the second level (eg, 0V).
當輸出電壓VOUT 小於參考電壓REF時,比較器330的輸出信號O330 由第二位準變化至第一位準。因此,比較器350的輸出信號comp將具有一脈衝。When the output voltage V OUT is less than the reference voltage REF, the output signal O 330 of the comparator 330 changes from the second level to the first level. Therefore, the output signal comp of the comparator 350 will have a pulse.
在本實施例中,當比較器310的輸出信號O310 由第一位準變化至第二位準,並且比較器350的輸出信號comp具有一脈衝時,過壓保護模組155為致能狀態。在其它實施例中,若比較器310的輸出信號O310 由第一位準變化至第二位準,但比較器350的輸出信號comp尚未具有脈衝時,則過壓保護模組155為禁能狀態。In this embodiment, when the output signal O 310 of the comparator 310 changes from the first level to the second level, and the output signal comp of the comparator 350 has a pulse, the overvoltage protection module 155 is enabled. . In other embodiments, if the output signal O 310 of the comparator 310 changes from the first level to the second level, but the output signal comp of the comparator 350 does not yet have a pulse, the overvoltage protection module 155 is disabled. status.
由於比較模組153所產生的脈衝可使過壓保護模組155適時地由禁能狀態變化至致能狀態,故可有效提高過壓保護的功能,以避免因過壓保護模組155的禁能時間太長,而無法即時偵測出輸出電壓VOUT 過高的現象發生。Since the pulse generated by the comparison module 153 can change the overvoltage protection module 155 from the disabled state to the enabled state in a timely manner, the function of the overvoltage protection can be effectively improved to avoid the prohibition of the overvoltage protection module 155. The energy can be too long to detect the phenomenon that the output voltage V OUT is too high.
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧處理系統100‧‧‧Processing system
110‧‧‧儲壓裝置110‧‧‧Pressure device
130‧‧‧驅動裝置130‧‧‧ drive
150‧‧‧處理裝置150‧‧‧Processing device
151、153‧‧‧比較模組151, 153‧‧‧ comparison module
155‧‧‧過壓保護模組155‧‧‧Overvoltage protection module
157‧‧‧邏輯模組157‧‧‧Logic Module
210、230‧‧‧電晶體210, 230‧‧‧Optoelectronics
250‧‧‧儲能單元250‧‧‧ Energy storage unit
310、330、350‧‧‧比較器310, 330, 350‧‧‧ comparator
第1圖為本發明之處理系統之一可能實施例。Figure 1 is a possible embodiment of a processing system of the present invention.
第2圖為本發明之驅動裝置之一可能實施例。Figure 2 is a possible embodiment of a driving device of the present invention.
第3圖為本發明之比較模組151及153之一可能實施例。Figure 3 is a possible embodiment of one of the comparison modules 151 and 153 of the present invention.
100...處理系統100. . . Processing system
110...儲壓裝置110. . . Pressure storage device
130...驅動裝置130. . . Drive unit
150...處理裝置150. . . Processing device
111...電容111. . . capacitance
151、153...比較模組151, 153. . . Comparison module
155...過壓保護模組155. . . Overvoltage protection module
157...邏輯模組157. . . Logic module
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW447152B (en) * | 1997-05-26 | 2001-07-21 | Pacific Cement Kabushiki Kaish | Control circuit and method for piezoelectric transformer |
CN2457780Y (en) * | 2000-10-17 | 2001-10-31 | 上海纽福克斯汽车配件有限公司 | Hand-held multifunction power source |
CN2938554Y (en) * | 2006-08-29 | 2007-08-22 | Bcd半导体制造有限公司 | Switch mode power supply and its overvoltage protection circuit |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW447152B (en) * | 1997-05-26 | 2001-07-21 | Pacific Cement Kabushiki Kaish | Control circuit and method for piezoelectric transformer |
CN2457780Y (en) * | 2000-10-17 | 2001-10-31 | 上海纽福克斯汽车配件有限公司 | Hand-held multifunction power source |
CN2938554Y (en) * | 2006-08-29 | 2007-08-22 | Bcd半导体制造有限公司 | Switch mode power supply and its overvoltage protection circuit |
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