TWI408216B - Application of Polishing Solution in Adjusting Polysilicon / Silica Selectivity Ratio - Google Patents
Application of Polishing Solution in Adjusting Polysilicon / Silica Selectivity Ratio Download PDFInfo
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本發明係關於一種化學機械拋光液，並且特別地，本發明係關於一種用於拋光多晶矽(Polysilicon)的化學機械拋光液。The present invention relates to a chemical mechanical polishing liquid, and in particular, to a chemical mechanical polishing liquid for polishing polysilicon.
在積體電路製造中，互連技術的標準在提高，一層上面又沉積一層，使得在襯底表面形成了不規則的形貌。現有技術中使用的一種平坦化方法就是化學機械拋光(CMP)，CMP工藝就是使用一種含磨料以及化學物質的混合物以及拋光墊去拋光一矽片表面。在典型的化學機械拋光方法中，將襯底直接與旋轉拋光墊接觸，用一載重物在襯底背面施加壓力。在拋光期間，墊片以及操作臺旋轉，同時在襯底背面保持向下的力，將磨料以及化學活性的溶液(通常稱為拋光液或拋光漿料)塗於墊片上，該拋光液與正在拋光的薄膜發生化學機械反應開始進行拋光過程。In the fabrication of integrated circuits, the standard of interconnect technology is increasing, and a layer is deposited on top of one layer, resulting in an irregular topography on the surface of the substrate. One method of planarization used in the prior art is chemical mechanical polishing (CMP), which uses a mixture of abrasives and chemicals and a polishing pad to polish the surface of a wafer. In a typical chemical mechanical polishing process, the substrate is placed in direct contact with a rotating polishing pad and a load is applied to the backside of the substrate with a load. During polishing, the gasket and the table rotate while maintaining a downward force on the back side of the substrate, applying an abrasive and a chemically active solution (commonly referred to as a polishing fluid or polishing slurry) to the gasket, the polishing fluid being The chemical film reaction of the film being polished begins the polishing process.
對於多晶矽的拋光，目前主要應用於兩種晶片，一種是DRAM，一種是Flash。後者應用中往往在對多晶矽的拋光中會涉及到對二氧化矽的拋光。For the polishing of polysilicon, it is mainly applied to two types of wafers, one is DRAM and the other is Flash. In the latter application, polishing of cerium oxide is often involved in the polishing of polycrystalline germanium.
在以往的主要利用以二氧化矽為研磨顆粒的鹼性漿料來拋光多晶矽層以及二氧化矽層的情況下，多晶矽的除取速率往往比二氧化矽的除去速率高得多，易導致多晶矽的過量去除而產生凹陷，影響隨後的製程。In the past, in the case of using an alkaline slurry containing cerium oxide as abrasive particles to polish the polycrystalline germanium layer and the cerium oxide layer, the removal rate of polycrystalline germanium is often much higher than that of cerium oxide, which tends to cause polycrystalline germanium. The excess is removed to create a depression that affects the subsequent process.
US2003/0153189A1公開了一種用於多晶矽拋光的化學機械拋光液及方法，該拋光液包含一種聚合物表面活性劑以及一種選自氧化鋁以及氧化鈰的研磨顆粒，該聚合物表面活性劑為聚羧酸酯表面活性劑，用該漿料可以使多晶矽表面大塊區域的拋光速率大大高於溝槽內的拋光速率，從而減少凹陷。US2003/0216003A1以及US2004/0163324A1公開了一種製造Flash的方法。其中包含一種拋光多晶矽的拋光液，並且，該拋光液中包含至少一種含有－N(OH),－NH(OH),－NH2 (OH)基團的化合物，使用該漿料的多晶矽與二氧化矽的拋光選擇比大於50。US 2003/0153189 A1 discloses a chemical mechanical polishing liquid and method for polycrystalline germanium polishing, the polishing liquid comprising a polymer surfactant and an abrasive particle selected from the group consisting of alumina and cerium oxide, the polymer surfactant being a polycarboxylate An acid ester surfactant with which the polishing rate of a large area of the surface of the polycrystalline silicon can be greatly higher than the polishing rate in the groove, thereby reducing the depression. A method of manufacturing a Flash is disclosed in US 2003/0216003 A1 and US 2004/0163324 A1. The invention comprises a polishing liquid for polishing polycrystalline germanium, and the polishing liquid comprises at least one compound containing a -N(OH), -NH(OH), -NH 2 (OH) group, and the polycrystalline germanium and the second using the slurry. The polishing selectivity of cerium oxide is greater than 50.
US2004/0014321A1公開了一種包含研磨顆粒以及氧化劑的酸性拋光液，使用該漿料可提高多晶矽與二氧化矽的拋光選擇比。US2004/0123528A1公開了一種包含研磨顆粒以及陰離子化合物的酸性拋光液，該陰離子化合物能降低保護層薄膜的去除速率，提高多晶矽與保護層薄膜的去除速率選擇比。US2005/0130428A1以及CN1637102A公開了一種用於多晶矽化學機械拋光的漿料，該漿料成分包含一種或多種在多晶矽層上形成鈍化層的非離子表面活性劑及一種能形成第二鈍化層來能減小氮化矽或氧化矽除去速率的第二表面活性劑。這種非離子表面活性劑至少包含一種選自環氧乙烷－環氧丙烷嵌段共聚物醇以及環氧乙烷－環氧丙烷三嵌段聚合物組成的組中的化合物，該漿料可以將多晶矽除去速率與絕緣體除去速率之間的選擇比至少減小大約50%。US 2004/0014321 A1 discloses an acidic polishing liquid comprising abrasive particles and an oxidizing agent, which can be used to increase the polishing selectivity of polycrystalline germanium to cerium oxide. US 2004/0123528 A1 discloses an acidic polishing liquid comprising abrasive particles and an anionic compound which can reduce the removal rate of the protective layer film and increase the removal rate selection ratio of the polycrystalline silicon and the protective layer film. US 2005/0130428 A1 and CN 1637102 A disclose a slurry for polycrystalline germanium chemical mechanical polishing comprising one or more nonionic surfactants forming a passivation layer on a polysilicon layer and a second passivation layer capable of being reduced A second surfactant of small tantalum nitride or cerium oxide removal rate. The nonionic surfactant comprises at least one compound selected from the group consisting of ethylene oxide-propylene oxide block copolymer alcohols and ethylene oxide-propylene oxide triblock polymers. The selection ratio between the polysilicon removal rate and the insulator removal rate is reduced by at least about 50%.
因此，本發明的範疇在於提供一種在鹼性條件下較好地拋光多晶矽薄膜的化學機械拋光液。Accordingly, it is a scope of the present invention to provide a chemical mechanical polishing liquid which preferably polishes a polycrystalline germanium film under alkaline conditions.
根據本發明之一較佳具體實施例，本發明之拋光液包含研磨顆粒以及水，並且包含一種或多種氧化劑。According to a preferred embodiment of the invention, the polishing fluid of the invention comprises abrasive particles and water and comprises one or more oxidizing agents.
在本發明中，該氧化劑較佳地為：含有至少一個過氧基(－－O－－O－－)的有機或無機化合物；以及含有一個處於最高氧化態的元素的有機或無機化合物。In the present invention, the oxidizing agent is preferably an organic or inorganic compound containing at least one peroxy group (--O--O--); and an organic or inorganic compound containing an element in the highest oxidation state.
該氧化劑更佳地為：過氧化氫及其衍生物、過氧化脲、過氧甲酸、過氧乙酸、過硫酸鹽、過碳酸鈉、高碘酸及其鹽、高氯酸及其鹽或高硼酸及其鹽中的一種或多種。The oxidizing agent is more preferably: hydrogen peroxide and its derivatives, urea peroxide, peroxyformic acid, peracetic acid, persulfate, sodium percarbonate, periodic acid and its salts, perchloric acid and its salts or high One or more of boric acid and its salts.
本發明該氧化劑的重量百分比濃度較佳地為0.1~30%；更佳地為0.5~20%。The concentration by weight of the oxidizing agent of the present invention is preferably from 0.1 to 30%; more preferably from 0.5 to 20%.
該拋光液的pH值較佳地為7~12。The pH of the polishing liquid is preferably from 7 to 12.
在本發明中，該研磨顆粒為二氧化矽、三氧化二鋁、二氧化鈰、二氧化鈦，覆蓋鋁的二氧化矽、摻雜鋁的二氧化矽及/或高分子研磨顆粒。In the present invention, the abrasive particles are ceria, alumina, ceria, titania, aluminum-coated ceria, aluminum-doped ceria, and/or polymer abrasive particles.
該研磨顆粒粒徑較佳地為30~150nm；更佳地為30~120nm。The abrasive particles preferably have a particle diameter of 30 to 150 nm; more preferably 30 to 120 nm.
該研磨顆粒重量百分比濃度濃度較佳地為0.5~30%；更佳地為2~30%。The concentration concentration of the abrasive particles is preferably from 0.5 to 30% by weight; more preferably from 2 to 30%.
本發明的漿料還可以含有pH調節劑、粘度調節劑、殺菌劑等來達到本發明的發明效果。The slurry of the present invention may further contain a pH adjuster, a viscosity modifier, a bactericide, or the like to attain the effects of the present invention.
特別地，本發明的積極進步效果在於：本發明的拋光液可以在鹼性條件下顯著改變多晶矽的去除速率，調節多晶矽與二氧化矽的選擇比，並明顯提高多晶矽的平坦化效率以及拋光殘留物的去除。In particular, the positive progress of the present invention is that the polishing liquid of the present invention can significantly change the removal rate of polycrystalline germanium under alkaline conditions, adjust the selectivity ratio of polycrystalline germanium to germanium dioxide, and significantly improve the planarization efficiency and polishing residue of polycrystalline germanium. Removal of matter.
關於本發明之優點與精神可以藉由以下的發明詳述得到進一步的瞭解。The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.
為達到上述有關本發明之範疇，所採用之技術手段及其餘功效，茲舉數個較佳實施例加以說明如下：In order to achieve the above-mentioned technical means and other functions, the preferred embodiments are described as follows:
對比拋光液1’：二氧化矽(100nm)15%、水餘量、PH值為11.2；多晶矽的拋光速率為3330 A/min，二氧化矽的拋光速率為521 A/min，兩者的選擇比為5.38。Contrast polishing solution 1': cerium oxide (100nm) 15%, water balance, pH 11.2; polycrystalline germanium polishing rate is 3330 A / min, cerium oxide polishing rate is 521 A / min, the choice of the two The ratio is 5.38.
拋光液1：二氧化矽(120nm)15%、過氧化氫0.5%、水餘量、PH值為11.2；多晶矽的拋光速率為1866 A/min，二氧化矽的拋光速率為482 A/min，兩者的選擇比為選擇比為3.87。Polishing solution 1: cerium oxide (120 nm) 15%, hydrogen peroxide 0.5%, water balance, pH 11.2; polycrystalline germanium polishing rate is 1866 A / min, cerium oxide polishing rate is 482 A / min, The choice ratio of the two is 3.87.
拋光液2：二氧化矽(100nm)15%、過氧化氫2%、水餘量、PH值為11.2；多晶矽的拋光速率為1747 A/min，二氧化矽的拋光速率為543 A/min，兩者的選擇比為選擇比為3.22。Polishing solution 2: cerium oxide (100 nm) 15%, hydrogen peroxide 2%, water balance, pH 11.2; polycrystalline germanium polishing rate 1747 A / min, cerium oxide polishing rate 543 A / min, The choice ratio of the two is 3.22.
拋光液3：二氧化矽(100nm)15%、過氧化氫5%、水餘量、PH值為11.2；多晶矽的拋光速率為950 A/min，二氧化矽的拋光速率為560 A/min，兩者的選擇比為選擇比為1.70。Polishing solution 3: cerium oxide (100 nm) 15%, hydrogen peroxide 5%, water balance, pH 11.2; polycrystalline germanium polishing rate of 950 A / min, cerium oxide polishing rate of 560 A / min, The choice ratio of the two is 1.70.
拋光液4：二氧化矽(100nm)15%、過氧化氫15%、水餘量、PH值為11.2；多晶矽的拋光速率為711 A/min，二氧化矽的拋光速率為580 A/min，兩者的選擇比為選擇比為1.23。Polishing solution 4: cerium oxide (100 nm) 15%, hydrogen peroxide 15%, water balance, pH 11.2; polycrystalline germanium polishing rate of 711 A / min, cerium oxide polishing rate of 580 A / min, The choice between the two is 1.23.
拋光液5：二氧化矽(100nm)15%、過氧化氫20%、水餘量、PH值為11.2；多晶矽的拋光速率為537 A/min，二氧化矽的拋光速率為572 A/min，兩者的選擇比為選擇比為0.94。Polishing solution 5: cerium oxide (100 nm) 15%, hydrogen peroxide 20%, water balance, pH 11.2; polycrystalline germanium polishing rate of 537 A / min, cerium oxide polishing rate of 572 A / min, The choice ratio of the two is 0.94.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、LOgitech LP50拋光機。The process parameters for polishing were: 3 psi for the downforce, 70 rpm for the polishing disc (14 inches), 80 rpm for the polishing head, 200 ml/min for the polishing fluid, PPG fast pad CS7, and LOgitech LP50 polishing machine.
對比拋光液2’：二氧化矽(100nm)10%、水餘量、PH值為11.2；多晶矽的拋光速率為2002 A/min，二氧化矽的拋光速率為375 A/min，兩者的選擇比為5.34。Comparative polishing solution 2': cerium oxide (100nm) 10%, water balance, pH 11.2; polycrystalline germanium polishing rate of 2002 A / min, cerium oxide polishing rate of 375 A / min, the choice of the two The ratio is 5.34.
拋光液6：二氧化矽(100nm)10%、過氧化氫5%、水餘量、PH值為7；多晶矽的拋光速率為572 A/min，二氧化矽的拋光速率為151 A/min，兩者的選擇比為選擇比為3.79。Polishing solution 6: cerium oxide (100 nm) 10%, hydrogen peroxide 5%, water balance, pH 7; polycrystalline germanium polishing rate of 572 A / min, cerium oxide polishing rate of 151 A / min, The choice between the two is 3.79.
拋光液7：二氧化矽(100nm)10%、過氧化氫5%、水餘量、PH值為10；多晶矽的拋光速率為739 A/min，二氧化矽的拋光速率為286 A/min，兩者的選擇比為選擇比為2.58。Polishing solution 7: cerium oxide (100 nm) 10%, hydrogen peroxide 5%, water balance, pH value 10; polycrystalline germanium polishing rate is 739 A / min, cerium oxide polishing rate is 286 A / min, The choice between the two is 2.58.
拋光液8：二氧化矽(100nm)10%、過氧化氫5%、水餘量、PH值為11.2；多晶矽的拋光速率為815A/min，二氧化矽的拋光速率為379 A/min，兩者的選擇比為選擇比為2.15。Polishing solution 8: cerium oxide (100 nm) 10%, hydrogen peroxide 5%, water balance, pH 11.2; polycrystalline germanium polishing rate of 815 A / min, cerium oxide polishing rate of 379 A / min, two The choice ratio is 2.15.
拋光液9：二氧化矽(100nm)10%、過氧化氫5%、水餘量、PH值為12；多晶矽的拋光速率為883 A/min，二氧化矽的拋光速率為484 A/min，兩者的選擇比為選擇比為1.82。Polishing solution 9: cerium oxide (100 nm) 10%, hydrogen peroxide 5%, water balance, pH 12; polycrystalline germanium polishing rate of 883 A / min, cerium oxide polishing rate of 484 A / min, The choice ratio of the two is 1.82.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad Cs7、Logitech LP50拋光機。The process parameters during polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad Cs7 for polishing pad, and Logitech LP50 polishing machine.
拋光液10：二氧化矽(100nm)2%、過氧化氫5%、水餘量、PH值為11.2；多晶矽的拋光速率為568 A/min，二氧化矽的拋光速率為160 A/min，兩者的選擇比為選擇比為3.55。Polishing solution 10: cerium oxide (100 nm) 2%, hydrogen peroxide 5%, water balance, pH 11.2; polycrystalline germanium polishing rate of 568 A / min, cerium oxide polishing rate of 160 A / min, The choice between the two is 3.55.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液11：二氧化矽(100nm)30%、過氧化氫5%、水餘量、PH值為11.2；多晶矽的拋光速率為1352 A/min，二氧化矽的拋光速率為916 A/min，兩者的選擇比為選擇比為1.48。Polishing solution 11: cerium oxide (100 nm) 30%, hydrogen peroxide 5%, water balance, pH 11.2; polycrystalline germanium polishing rate is 1352 A/min, cerium oxide polishing rate is 916 A/min, The choice between the two is 1.48.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液12：二氧化矽(100nm)10%、過氧乙酸1%、水餘量、PH值為11.2；多晶矽的拋光速率為928 A/min，二氧化矽的拋光速率為391 A/min，兩者的選擇比為選擇比為2.37。Polishing solution 12: cerium oxide (100 nm) 10%, peroxyacetic acid 1%, water balance, pH 11.2; polycrystalline germanium polishing rate of 928 A / min, cerium oxide polishing rate of 391 A / min, The choice ratio of the two is 2.37.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液13：二氧化矽(100nm)10%、過硫酸銨1%、水餘量、PH值為11.2；多晶矽的拋光速率為1885 A/min，二氧化矽的拋光速率為413 A/min，兩者的選擇比為選擇比為4.56。Polishing liquid 13: cerium oxide (100 nm) 10%, ammonium persulfate 1%, water balance, pH 11.2; polycrystalline germanium polishing rate 1885 A / min, cerium oxide polishing rate 413 A / min, The choice between the two is 4.56.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液14：二氧化鈦(150nm)10%、過氧化鉀0.1%、水餘量、PH值為11.2；多晶矽的拋光速率為1232 A/min，二氧化矽的拋光速率為954 A/min，兩者的選擇比為選擇比為1.29。Polishing solution 14: titanium dioxide (150 nm) 10%, potassium peroxide 0.1%, water balance, pH 11.2; polycrystalline germanium polishing rate of 1232 A / min, cerium oxide polishing rate of 954 A / min, both The choice ratio is 1.29.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液15：三氧化二鋁(30nm)30%、過碳酸鈉30%、水餘量、PH值為11.2；多晶矽的拋光速率為2031 A/min，二氧化矽的拋光速率為2305 A/min，兩者的選擇比為選擇比為0.88。Polishing solution 15: aluminum oxide (30nm) 30%, sodium percarbonate 30%, water balance, pH 11.2; polycrystalline germanium polishing rate is 2031 A / min, cerium oxide polishing rate is 2305 A / min The choice ratio of the two is 0.88.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液16：摻雜鋁的二氧化矽(30nm)30%、過氧甲酸30%、水餘量、PH值為11.2；多晶矽的拋光速率為1857 A/min，二氧化矽的拋光速率為2159A/min，兩者的選擇比為選擇比為0.86。Polishing solution 16: aluminum-doped ceria (30nm) 30%, peroxyformic acid 30%, water balance, pH 11.2; polycrystalline germanium polishing rate is 1857 A/min, cerium oxide polishing rate is 2159A /min, the choice ratio of the two is 0.86.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液17：覆蓋鋁的二氧化矽(45nm)10%、高硼酸鈉以及過氧化脲10%、水餘量、PH值為11.2；多晶矽的拋光速率為962 A/min，二氧化矽的拋光速率為846 A/min，兩者的選擇比為選擇比為1.14。Polishing solution 17: aluminum-coated cerium oxide (45 nm) 10%, sodium perborate and urea peroxide 10%, water balance, pH 11.2; polycrystalline germanium polishing rate 962 A / min, cerium oxide polishing The rate is 846 A/min, and the selection ratio of the two is 1.14.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液18：二氧化矽(70nm)10%、高碘酸以及高氯酸鉀10%、水餘量、PH值為11.2；多晶矽的拋光速率為886 A/min，二氧化矽的拋光速率為480 A/min，兩者的選擇比為選擇比為1.85。Polishing solution 18: cerium oxide (70nm) 10%, periodic acid and potassium perchlorate 10%, water balance, pH 11.2; polycrystalline germanium polishing rate of 886 A / min, cerium oxide polishing rate of 480 A /min, the choice ratio of the two is 1.85.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
拋光液19：二氧化鈰(50nm)0.5%、過氧化氫10%、水餘量、PH值為11.2；多晶矽的拋光速率為693 A/min，二氧化矽的拋光速率為257 A/min，兩者的選擇比為選擇比為2.70。Polishing solution 19: cerium oxide (50 nm) 0.5%, hydrogen peroxide 10%, water balance, pH 11.2; polycrystalline germanium polishing rate of 693 A / min, cerium oxide polishing rate of 257 A / min, The choice ratio of the two is 2.70.
拋光時的製程參數為：下壓力3psi、拋光盤(直徑14英寸)的轉速70rpm、拋光頭轉速80rpm、拋光液流速200ml/min、拋光墊為PPG fast pad CS7、Logitech LP50拋光機。The process parameters for polishing were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7, and Logitech LP50 polishing machine.
本發明所使用的原料以及試劑均為市售所得。The raw materials and reagents used in the present invention are all commercially available.
藉由以上較佳具體實施例之詳述，係希望能更加清楚描述本發明之特徵與精神，而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地，其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此，本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋，以致使其涵蓋所有可能的改變以及具相等性的安排。The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1264636A (en) * | 1999-02-18 | 2000-08-30 | 科莱恩(法国)公司 | Mechanical chemical polishing method for aluminium or aluminium alloy conducting layer |
| TW512170B (en) * | 1998-07-24 | 2002-12-01 | Ibm | Aqueous slurry composition and method for polishing a surface using the same |
| CN1398938A (en) * | 2002-05-10 | 2003-02-26 | 河北工业大学 | Chemical and mechanical leveling polishing liquid for multilayer copper wire in large scale integrated circuit |
| US20030153189A1 (en) * | 2002-02-08 | 2003-08-14 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
| WO2006068328A1 (en) * | 2004-12-22 | 2006-06-29 | Showa Denko K.K. | Polishing composition and polishing method |
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- 2007-03-07 TW TW96107775A patent/TWI408216B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW512170B (en) * | 1998-07-24 | 2002-12-01 | Ibm | Aqueous slurry composition and method for polishing a surface using the same |
| CN1264636A (en) * | 1999-02-18 | 2000-08-30 | 科莱恩(法国)公司 | Mechanical chemical polishing method for aluminium or aluminium alloy conducting layer |
| US20030153189A1 (en) * | 2002-02-08 | 2003-08-14 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
| CN1398938A (en) * | 2002-05-10 | 2003-02-26 | 河北工业大学 | Chemical and mechanical leveling polishing liquid for multilayer copper wire in large scale integrated circuit |
| WO2006068328A1 (en) * | 2004-12-22 | 2006-06-29 | Showa Denko K.K. | Polishing composition and polishing method |
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