TWI407485B - Method for treating surface of cold cathode - Google Patents

Method for treating surface of cold cathode Download PDF

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TWI407485B
TWI407485B TW98131999A TW98131999A TWI407485B TW I407485 B TWI407485 B TW I407485B TW 98131999 A TW98131999 A TW 98131999A TW 98131999 A TW98131999 A TW 98131999A TW I407485 B TWI407485 B TW I407485B
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cold cathode
liquid glue
surface treatment
glue
liquid
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TW98131999A
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TW201112309A (en
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Qi Cai
Tong-Feng Gao
Xing Zhang
Liang Liu
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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Abstract

The invention relates to a method for treating surface of cold cathode. The method includes the following steps: providing a cold cathode which includes a plurality of one-dimensional emitters; positioning a liquid glue on a surface of the cold cathode; solidifying the liquid glue; removing the solidified glue so as to erect the one-dimensional emitters.

Description

一種冷陰極的表面處理方法 Surface treatment method for cold cathode

本發明涉及一種表面處理方法,尤其涉及一種冷陰極的表面處理方法。 The present invention relates to a surface treatment method, and more particularly to a surface treatment method for a cold cathode.

絲網印刷厚膜技術製備的冷陰極電子源具有低成本及可大面積製備的優點,可應用於場致發射平板顯示器等真空微電子器件。目前的可印製的冷陰極其成分基本上都是奈米碳管與普通導電漿料的混合,或者是將奈米碳管與導電銀粉、複數種固體粘結劑材料及有機溶劑等進行混合(N.S.Lee,et al.,Diamond Relat.Master.,2001,10:265-270)。採用奈米碳管-導電銀漿類漿料製備的場發射冷陰極,經過高溫加熱處理去除其中的有機溶劑後,主要由奈米碳管、導電相金屬顆粒及玻璃態固體粘結材料組成,表面的奈米碳管作為主要的場致電子發射源。 The cold cathode electron source prepared by the screen printing thick film technology has the advantages of low cost and large area preparation, and can be applied to vacuum microelectronic devices such as field emission flat panel displays. The current printable cold cathode is basically composed of a mixture of a carbon nanotube and a common conductive paste, or a mixture of a carbon nanotube and a conductive silver powder, a plurality of solid binder materials, and an organic solvent. (NS Lee, et al., Diamond Relat. Master., 2001, 10: 265-270). The field-emitting cold cathode prepared by using the carbon nanotube-conductive silver paste slurry is subjected to high-temperature heat treatment to remove the organic solvent, and is mainly composed of a carbon nanotube, a conductive phase metal particle and a glassy solid binder material. The carbon nanotubes serve as the main field electron emission source.

冷陰極漿料經過高溫加熱處理後得到冷陰極,冷陰極表面由於被玻璃態固體粘結物質及其他一些雜質覆蓋,暴露在冷陰極表面的奈米碳管場發射體數量很少,發射電子流小。因此需要引入一些表面處理技術以改善冷陰極的場發射特性。 The cold cathode slurry is subjected to high temperature heat treatment to obtain a cold cathode. The surface of the cold cathode is covered by the glassy solid binder and other impurities, and the number of carbon nanotube field emitters exposed on the surface of the cold cathode is small, and the electron emission stream is emitted. small. It is therefore necessary to introduce some surface treatment techniques to improve the field emission characteristics of the cold cathode.

先前技術中揭露了一種採用膠帶處理以奈米碳管為場發射體的冷陰極的方法,其包括以下步驟:將特定膠帶粘於冷陰極的表面;在特定溫度下加熱所述膠帶;在所述特定溫度下揭去膠帶以使冷陰極表面的奈米碳管豎立。 The prior art discloses a method for treating a cold cathode using a carbon nanotube as a field emitter by using a tape, comprising the steps of: sticking a specific tape to a surface of a cold cathode; heating the tape at a specific temperature; The tape is peeled off at a specific temperature to erect the carbon nanotubes on the surface of the cold cathode.

然而,上述冷陰極的表面處理方法具有以下缺點:其一,須在特定的溫度 下加熱膠帶然後揭去膠帶,從而達到豎立冷陰極表面奈米碳管的目的。然而,所述方法中加熱溫度的控制對表面處理效果影響很大:過低的加熱溫度會使奈米碳管從冷陰極上完全剝離達不到表面處理的目的;過高的加熱溫度會導致膠帶的膠殘留在冷陰極表面而影響其發射性能及壽命。其二,將膠帶粘於冷陰極表面時,由於實際操作所限,膠帶難以均勻地緊密接觸冷陰極,從而造成膠帶與冷陰極間殘留空氣,其表現為膠帶上的氣泡。且由於膠帶為圖態,因此,氣泡一旦產生,不易排出。氣泡處的奈米碳管與膠帶不接觸,因此將膠帶揭去時會導致氣泡處的奈米碳管仍處於隨機分佈狀態而不能豎立,這樣會降低奈米碳管的場發射均勻性。 However, the surface treatment method of the above cold cathode has the following disadvantages: one must be at a specific temperature The tape is heated down and the tape is removed to achieve the purpose of erecting the cold cathode surface carbon nanotubes. However, the control of the heating temperature in the method has a great influence on the surface treatment effect: too low heating temperature completely peels the carbon nanotube from the cold cathode to the surface treatment purpose; excessive heating temperature causes The glue of the tape remains on the surface of the cold cathode, which affects its emission performance and life. Second, when the tape is adhered to the surface of the cold cathode, it is difficult for the tape to uniformly contact the cold cathode due to the actual operation, thereby causing residual air between the tape and the cold cathode, which is represented by air bubbles on the tape. Moreover, since the tape is in a state of view, once the bubble is generated, it is difficult to discharge. The carbon nanotubes at the bubble are not in contact with the tape, so when the tape is removed, the carbon nanotubes at the bubble are still randomly distributed and cannot be erected, which reduces the uniformity of field emission of the carbon nanotubes.

有鑒於此,提供一種簡單、穩定的冷陰極表面處理方法,以解決上述技術問題實為必要。 In view of this, it is necessary to provide a simple and stable cold cathode surface treatment method to solve the above technical problems.

一種冷陰極的表面處理方法,其包括以下步驟:提供一冷陰極,所述冷陰極包括複數一維場發射體及粘結劑;設置一液體膠於所述冷陰極表面;加熱固化所述液體膠,,同時加熱冷陰極的粘結劑為半熔融態;去除冷陰極表面的固化後的液體膠,以使冷陰極表面的一維場發射體豎立。 A surface treatment method for a cold cathode, comprising the steps of: providing a cold cathode comprising a plurality of one-dimensional field emitters and a binder; disposing a liquid glue on the surface of the cold cathode; and heating and curing the The liquid glue, the binder that simultaneously heats the cold cathode is in a semi-molten state; the solidified liquid glue on the surface of the cold cathode is removed to erect the one-dimensional field emitter on the surface of the cold cathode.

相對於先前技術,本發明提供的冷陰極的表面處理方法具有以下優點:其一,本發明提供的冷陰極的表面處理方法無須精確控制溫度,因此,方法簡單、穩定、重複性及操作性強;其二,由於液體膠具有流動性,在冷陰極表面和液體膠之間即使存在有部分空氣,也可以通過液體膠排出,從而使暴露於冷陰極表面的一維場發射體與液體膠緊密接觸,不殘留氣泡,因此豎立冷陰極表面的一維場發射體的效率較高;其三,由於液體膠具有流動性,因此,可以處理各種冷陰極的表面,特別是膠帶不易處理或無法處理的凹槽及/或側面。 Compared with the prior art, the surface treatment method of the cold cathode provided by the invention has the following advantages: First, the surface treatment method of the cold cathode provided by the invention does not need to accurately control the temperature, and therefore, the method is simple, stable, reproducible and operable. Second, because of the fluidity of the liquid glue, even if there is part of the air between the surface of the cold cathode and the liquid glue, it can be discharged through the liquid glue, so that the one-dimensional field emitter exposed to the surface of the cold cathode is close to the liquid glue. Contact, no residual bubbles, so the efficiency of the one-dimensional field emitter erecting the surface of the cold cathode is higher; third, because the liquid glue has fluidity, it can handle the surface of various cold cathodes, especially the tape is difficult to handle or cannot be processed. Groove and / or side.

圖1係本發明具體實施例提供的冷陰極表面處理方法的流程圖。 1 is a flow chart of a cold cathode surface treatment method provided by a specific embodiment of the present invention.

圖2係本發明具體實施例提供的冷陰極表面處理方法所採用的冷陰極製備方法的流程圖。 2 is a flow chart of a method for preparing a cold cathode used in a cold cathode surface treatment method according to an embodiment of the present invention.

以下將結合附圖詳細說明本發明實施例提供的冷陰極的表面處理方法。 The surface treatment method of the cold cathode provided by the embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

請參閱圖1,本發明具體實施例提供的冷陰極的表面處理的方法包括以下步驟:步驟S101,提供一冷陰極;步驟S102,設置一液體膠於所述冷陰極表面;步驟S103,固化所述液體膠;步驟S104,去除冷陰極表面的固化後的液體膠,以使冷陰極表面的一維場發射體豎立。 Referring to FIG. 1, a method for surface treatment of a cold cathode according to an embodiment of the present invention includes the following steps: step S101, providing a cold cathode; step S102, providing a liquid glue on the cold cathode surface; and step S103, curing The liquid glue is described; in step S104, the solidified liquid glue on the surface of the cold cathode is removed to erect the one-dimensional field emitter on the surface of the cold cathode.

在步驟S101中,所述冷陰極包括複數一維場發射體。由於一維場發射體具有較高的長徑比,因此在較低的電場下即可發射出電子。 In step S101, the cold cathode includes a plurality of one-dimensional field emitters. Since the one-dimensional field emitter has a high aspect ratio, electrons can be emitted at a lower electric field.

可選擇地,所述冷陰極還可包括導電相、粘結劑及吸氣劑微粒中的一種或幾種。所述一維場發射體在冷陰極中隨機分布,且有至少部分一維場發射體至少部分暴露於冷陰極表面。本實施例中,所述冷陰極包括複數一維場發射體、導電相及粘結劑。 Alternatively, the cold cathode may further include one or more of a conductive phase, a binder, and getter particles. The one-dimensional field emitters are randomly distributed in the cold cathode and at least a portion of the one-dimensional field emitters are at least partially exposed to the cold cathode surface. In this embodiment, the cold cathode includes a plurality of one-dimensional field emitters, a conductive phase, and a binder.

所述一維場發射體包括具有場發射特性的奈米管、奈米線、奈米纖維、奈米棒或奈米帶等中的一種或幾種。其中,所述奈米線包括氧化物奈米線、氮化物奈米線或碳化物奈米線。所述氧化物奈米線可包括氧化鋁(Al2O3) 奈米線、氧化鎂(MgO)奈米線、氧化鋯(ZrO)奈米線、二氧化鈦(TiO2)奈米線或氧化鈣(CaO)奈米線等。所述氮化物奈米線可包括氮化鋁(AlN)奈米線、氮化硼(BN)奈米線、氮化矽(SiN)奈米線或氮化鈦(TiN)奈米線等。所述碳化物奈米線可包括碳化矽(SiC)奈米線、碳化鈦(TiC)奈米線、碳化鎢(WC)奈米線、碳化鋯(ZrC)奈米線或碳化鈮(NbC)奈米線。所述奈米纖維包括碳纖維。所述一維場發射體還可以為一維複合材料,例如在一維場發射體的表面形成一表面修飾材料以改善一維場發射體的場發射特性。在本實施例中,所述一維場發射體為奈米碳管。所述奈米碳管可包括單壁奈米碳管、雙壁奈米碳管或多壁奈米碳管。所述單壁奈米碳管的直徑優選為0.5奈米~50奈米。所述雙壁奈米碳管的直徑優選為1.0奈米~50奈米。所述多壁奈米碳管的直徑優選為1.5奈米~50奈米。 The one-dimensional field emitter includes one or more of a nanotube, a nanowire, a nanofiber, a nanorod or a nanobelt having field emission characteristics. Wherein, the nanowire comprises an oxide nanowire, a nitride nanowire or a carbide nanowire. The oxide nanowire may include alumina (Al 2 O 3 ) nanowire, magnesium oxide (MgO) nanowire, zirconia (ZrO) nanowire, titanium dioxide (TiO 2 ) nanowire or calcium oxide (CaO) nanowire and so on. The nitride nanowire may include an aluminum nitride (AlN) nanowire, a boron nitride (BN) nanowire, a tantalum nitride (SiN) nanowire, or a titanium nitride (TiN) nanowire. The carbide nanowire may include tantalum carbide (SiC) nanowire, titanium carbide (TiC) nanowire, tungsten carbide (WC) nanowire, zirconium carbide (ZrC) nanowire or niobium carbide (NbC) Nano line. The nanofibers include carbon fibers. The one-dimensional field emitter may also be a one-dimensional composite material, such as a surface modification material formed on the surface of the one-dimensional field emitter to improve the field emission characteristics of the one-dimensional field emitter. In this embodiment, the one-dimensional field emitter is a carbon nanotube. The carbon nanotubes may comprise single-walled carbon nanotubes, double-walled carbon nanotubes or multi-walled carbon nanotubes. The diameter of the single-walled carbon nanotube is preferably from 0.5 nm to 50 nm. The diameter of the double-walled carbon nanotubes is preferably from 1.0 nm to 50 nm. The diameter of the multi-walled carbon nanotubes is preferably from 1.5 nm to 50 nm.

所述導電相包括金屬微粒、氧化銦(In2O3)微粒、氧化錫(SnO3)微粒或氧化銦錫(ITO)微粒等。所述金屬微粒包括鎳、鎘等。所述導電相用於增強冷陰極中的一維場發射體之間、一維場發射體及底電極之間的電連接。所述底電極與冷陰極電連接。本實施例中所述導電相為ITO微粒。 The conductive phase includes metal fine particles, indium oxide (In 2 O 3 ) fine particles, tin oxide (SnO 3 ) fine particles, or indium tin oxide (ITO) fine particles. The metal particles include nickel, cadmium, and the like. The conductive phase serves to enhance electrical connection between the one-dimensional field emitters, the one-dimensional field emitters, and the bottom electrode in the cold cathode. The bottom electrode is electrically connected to the cold cathode. The conductive phase in this embodiment is ITO microparticles.

所述粘結劑為梯形聚苯基倍半矽氧烷(PPSQ)或無機材料,優選的所述粘結劑為玻璃粉或旋塗玻璃(SOG)。常溫下SOG係一種相當於SiO2的液相絕緣材料。在本實施例中,所述粘結劑為玻璃粉。 The binder is a trapezoidal polyphenylsesquioxanes (PPSQ) or an inorganic material, and preferably the binder is glass powder or spin-on glass (SOG). At room temperature, SOG is a liquid phase insulating material equivalent to SiO 2 . In this embodiment, the binder is glass frit.

如上所述,本實施例中所述冷陰極包括奈米碳管、玻璃粉及ITO微粒。所述冷陰極可通過圖2中所示的冷陰極的製備方法獲得。所述冷陰極的製備方法包括以下步驟:步驟S201,將奈米碳管、ITO微粒、玻璃粉在有機載體中進行充分混合形成冷陰極漿料。 As described above, the cold cathode in the present embodiment includes a carbon nanotube, a glass frit, and ITO fine particles. The cold cathode can be obtained by the preparation method of the cold cathode shown in FIG. 2. The method for preparing the cold cathode comprises the following steps: Step S201, the carbon nanotubes, the ITO particles, and the glass frit are thoroughly mixed in an organic vehicle to form a cold cathode slurry.

冷陰極漿料各成分的配製濃度比例分別為:5%-15%的奈米碳管,10%-20%的ITO微粒,5%的玻璃粉及60%-80%的有機載體。所述奈米碳管的長度在5微米-25微米範圍內為佳,過短會減弱奈米碳管的場發射特性,過長容易使奈米碳管糾纏或折斷。 The components of the cold cathode slurry are prepared at a concentration ratio of 5% to 15% of carbon nanotubes, 10% to 20% of ITO particles, 5% of glass powder, and 60% to 80% of organic vehicle. The length of the carbon nanotubes is preferably in the range of 5 micrometers to 25 micrometers. Too short will weaken the field emission characteristics of the carbon nanotubes, and too long, the nanocarbon tubes may be entangled or broken.

所述有機載體可包括作為溶劑的松油醇、乙醇、乙二醇、異丙醇、碳氫化合物、水及其混合溶劑,作為增塑劑的少量鄰位苯二甲二丁酯及作為穩定劑的少量乙基纖維素形成的混合劑。為了滿足絲網印刷工藝的要求,冷陰極漿料中可以添加複數種有機溶劑及有機助劑,如增粘劑、分散劑及表面活性劑等有機助劑,以調節漿料的粘度、流動性等物理性質。所用的有機溶劑及有機助劑沒有特殊限制。有機溶劑及有機助劑的添加量主要根據印刷工藝而確定。本實施例中所述有機載體包括作為溶劑的乙醇及松油醇,作為穩定劑的乙基纖維素等。 The organic vehicle may include terpineol, ethanol, ethylene glycol, isopropanol, hydrocarbon, water, and a mixed solvent thereof as a solvent, a small amount of ortho-xylene dibutylate as a plasticizer, and as a stabilizer A small amount of ethylcellulose formed by a mixture of agents. In order to meet the requirements of the screen printing process, a plurality of organic solvents and organic auxiliaries such as tackifiers, dispersants and surfactants may be added to the cold cathode slurry to adjust the viscosity and fluidity of the slurry. And other physical properties. The organic solvent and organic auxiliary used are not particularly limited. The amount of the organic solvent and the organic auxiliary added is mainly determined according to the printing process. The organic vehicle in the present embodiment includes ethanol and terpineol as a solvent, ethyl cellulose as a stabilizer, and the like.

步驟S202,低溫加熱處理所述冷陰極漿料。 Step S202, the cold cathode slurry is treated by low temperature heating.

低溫加熱處理所述冷陰極漿料使有機載體、有機溶劑及有機助劑成分揮發。在去除有機載體、有機溶劑及有機助劑成分後,玻璃粉、奈米碳管及ITO微粒等之間依靠凡德瓦爾力形成了緊密的結合。本實施例中,在150℃的溫度下燒結該冷陰極漿料,松油醇及乙醇被揮發。玻璃粉、ITO微粒及奈米碳管通過凡德瓦爾力結合在一起。 The cold cathode slurry is subjected to low-temperature heat treatment to volatilize the organic vehicle, the organic solvent, and the organic auxiliary component. After removing the organic carrier, the organic solvent and the organic auxiliary component, the glass powder, the carbon nanotubes and the ITO particles form a close bond by virtue of the van der Waals force. In this example, the cold cathode slurry was sintered at a temperature of 150 ° C, and terpineol and ethanol were volatilized. Glass powder, ITO particles and carbon nanotubes are combined by Van der Waals force.

步驟S203,燒結所述冷陰極漿料得到冷陰極。 In step S203, the cold cathode slurry is sintered to obtain a cold cathode.

燒結所述冷陰極漿料以使其中的粘結劑完全熔融或半熔融在一起。冷卻粘結劑從而使導電相及一維場發射體被固結在粘結劑中。此燒結過程還可以使冷陰極漿料中的部分高熔點有機載體揮發。優選地,燒結所述冷陰極漿料以使其中的粘結劑處於半熔融狀態,之後冷卻半熔融狀態的粘結劑從而 使導電相及一維場發射體固結在半熔融態的粘結劑中。若冷陰極為玻璃粉,則燒結溫度高於玻璃粉的轉變溫度。優選地燒結溫度介於玻璃粉的轉變溫度及軟化溫度。燒結溫度高於玻璃粉的轉變溫度,此時玻璃粉為完全熔融狀態。燒結溫度介於玻璃粉的轉變溫度及軟化溫度,此時玻璃粉為半熔融狀態。本實施例中,在400℃的溫度下燒結所述冷陰極漿料以使冷陰極漿料中的玻璃粉成為半熔融態,之後冷卻所述玻璃粉,從而使奈米碳管及ITO微粒被固定在玻璃粉中。由於冷陰極中的玻璃粉為半熔融態,因此,該冷陰極的各組分之間具有一定的間隙。在此燒結過程中,冷陰極中的乙基纖維素被揮發。經過上述步驟即可獲得適用於步驟S101的冷陰極。 The cold cathode slurry is sintered to completely melt or semi-melt the binder therein. The binder is cooled such that the conductive phase and the one-dimensional field emitter are consolidated in the binder. This sintering process can also volatilize a portion of the high melting organic vehicle in the cold cathode slurry. Preferably, the cold cathode slurry is sintered such that the binder therein is in a semi-molten state, and then the binder in a semi-molten state is cooled thereby The conductive phase and the one-dimensional field emitter are consolidated in a semi-molten binder. If the cold cathode is a glass frit, the sintering temperature is higher than the glass transition temperature. Preferably, the sintering temperature is between the transition temperature and the softening temperature of the glass frit. The sintering temperature is higher than the transition temperature of the glass frit, at which time the glass frit is in a completely molten state. The sintering temperature is between the transition temperature and the softening temperature of the glass frit, and the glass frit is in a semi-molten state. In this embodiment, the cold cathode slurry is sintered at a temperature of 400 ° C to make the glass powder in the cold cathode slurry into a semi-molten state, after which the glass frit is cooled, so that the carbon nanotubes and the ITO particles are Fixed in glass powder. Since the glass frit in the cold cathode is in a semi-molten state, there is a certain gap between the components of the cold cathode. During this sintering process, the ethyl cellulose in the cold cathode is volatilized. Through the above steps, a cold cathode suitable for the step S101 can be obtained.

此外,所述冷陰極可僅包括複數奈米碳管。這種僅包括奈米碳管的冷陰極的製備方法可通過將奈米碳管與二甲基甲醯胺溶液混合後揮發去除二甲基甲醯胺的方法製備,也可以通過化學氣相沈積(Chemical Vapor Deposition,CVD)方法製得。所述將奈米碳管與二甲基甲醯胺溶液混合後揮發去除二甲基甲醯胺形成冷陰極的方法包括以下步驟:首先,將奈米碳管及二甲基甲醯胺溶液混合,並通過超聲波震盪法使得奈米碳管進一步分散在二甲基甲醯胺溶液中,形成一混合溶液;其次,揮發去除上述混合液中的二甲基甲醯胺,從而得到一僅包括奈米碳管的冷陰極,該冷陰極包括複數奈米碳管,且複數奈米碳管之間具有一定的間隙。 Further, the cold cathode may include only a plurality of carbon nanotubes. The preparation method of the cold cathode including only the carbon nanotubes can be prepared by mixing the carbon nanotubes with the dimethylformamide solution and then volatilizing to remove dimethylformamide, or by chemical vapor deposition. (Chemical Vapor Deposition, CVD) method. The method for mixing a carbon nanotube and a dimethylformamide solution to volatilize and remove dimethylformamide to form a cold cathode comprises the following steps: first, mixing a carbon nanotube and a dimethylformamide solution And the nano carbon tube is further dispersed in the dimethylformamide solution by ultrasonic vibration to form a mixed solution; secondly, the dimethylformamide in the mixed liquid is removed by volatilization, thereby obtaining a A cold cathode of a carbon nanotube comprising a plurality of carbon nanotubes with a certain gap between the plurality of carbon nanotubes.

按照上述方法製得的冷陰極需要經過步驟S102處理。 The cold cathode produced in accordance with the above method needs to be subjected to the treatment of step S102.

在步驟S102中,所述液體膠為可以固化的膠類。所述液體膠可以為熱固性膠、熱塑性膠或紫外光固化膠。具體而言,所述液體膠可以為液體矽膠、聚矽氧烷酯類液晶(PMMS)及紫外光固化膠等。所述液體膠可在加熱、冷卻、曝光、電子束照射或磁電等物理方法或添加固化劑等化學方法作用下固化。本實施例中,所述液體膠為矽膠。 In step S102, the liquid glue is a glue that can be cured. The liquid glue may be a thermosetting glue, a thermoplastic glue or an ultraviolet curing glue. Specifically, the liquid glue may be a liquid silicone, a polyoxyalkylene ester liquid crystal (PMMS), an ultraviolet curing adhesive or the like. The liquid glue can be cured by a physical method such as heating, cooling, exposure, electron beam irradiation or magnetoelectric or a chemical method such as adding a curing agent. In this embodiment, the liquid glue is silicone.

所述設置液體膠於冷陰極表面的方法包括以下步驟:首先,將液體膠傾倒於冷陰極的表面;其次,使液體膠在冷陰極表面流平從而使暴露於冷陰極表面的一維場發射體與液體膠緊密接觸。由於液體膠具有流動性,因此在冷陰極表面和液體膠之間即使存在有部分空氣,也可以通過液體膠排出,從而使暴露於冷陰極表面的一維場發射體與液體膠緊密接觸。 The method for setting a liquid glue on a cold cathode surface comprises the steps of: first, pouring a liquid glue onto a surface of a cold cathode; secondly, leveling the liquid glue on a surface of the cold cathode to cause one-dimensional field emission exposed to the surface of the cold cathode; The body is in intimate contact with the liquid glue. Since the liquid glue has fluidity, even if there is a part of air between the cold cathode surface and the liquid glue, it can be discharged through the liquid glue, so that the one-dimensional field emitter exposed to the surface of the cold cathode is in close contact with the liquid glue.

可以通過旋轉所述冷陰極使液體膠在冷陰極的表面流平,也可以使液體膠在冷陰極表面自然流平,還可以在將液體膠傾倒於冷陰極的表面之後用刷子刷平所述液體膠,或者採用點膠機將液體膠設置於冷陰極的表面之後使液體膠流平。 The liquid glue can be leveled on the surface of the cold cathode by rotating the cold cathode, or the liquid glue can be naturally leveled on the surface of the cold cathode, and the liquid glue can be flattened by brushing after pouring the liquid glue onto the surface of the cold cathode. The liquid glue is used, or the liquid glue is placed on the surface of the cold cathode by a dispenser to level the liquid glue.

本實施例中,將液體矽膠設置於冷陰極表面的方法為使液體矽膠在冷陰極表面自然流平。由於液體膠具有較好的流動性,因此,在將液體膠設置於冷陰極表面後,液體膠可與冷陰極表面的一維場發射體充分接觸,不殘留氣泡。由於本實施例所採用的冷陰極的各組分之間具有一定的間隙,因此,液體膠在鋪設於冷陰極的表面之後,液體膠將會滲入冷陰極的間隙中。待液體膠在冷陰極表面流平後,即可進行步驟S103。 In this embodiment, the liquid silicone is disposed on the surface of the cold cathode in such a manner that the liquid silicone is naturally leveled on the surface of the cold cathode. Since the liquid glue has good fluidity, after the liquid glue is placed on the surface of the cold cathode, the liquid glue can be in full contact with the one-dimensional field emitter on the surface of the cold cathode without leaving bubbles. Since there is a certain gap between the components of the cold cathode used in this embodiment, the liquid glue will penetrate into the gap of the cold cathode after being laid on the surface of the cold cathode. After the liquid glue is leveled on the surface of the cold cathode, step S103 can be performed.

在步驟S103中,固化後的液體膠與暴露於冷陰極表面的一維場發射體之間形成一定的結合力。所述固化液體膠的方法依據液體膠本身的性質而定。 In step S103, the cured liquid glue forms a certain bonding force with the one-dimensional field emitter exposed to the surface of the cold cathode. The method of curing the liquid glue depends on the nature of the liquid glue itself.

對於熱固性膠採用逐步升溫的方法使其固化。升溫固化所述熱固性膠的方法具體為:通過一加熱裝置對所述液體膠進行加熱直至形成固態。所述熱固性膠固化的溫度及時間由所述熱固性膠的性質及使用量決定。所述加熱裝置可以係烘箱、加熱爐等裝置。 For the thermosetting glue, it is cured by a stepwise heating method. The method of curing the thermosetting glue by heating is specifically: heating the liquid glue by a heating device until a solid state is formed. The temperature and time of curing of the thermosetting glue are determined by the nature and amount of the thermosetting glue. The heating device may be an oven, a heating furnace or the like.

對於熱塑性膠採用冷卻的方法使其固化。固化所述熱塑性膠的方法為:在室溫下自然冷卻或通過一冷卻裝置對液體膠進行冷卻以形成固態。所述冷 卻裝置可以是循環水冷卻器、液壓油冷卻器或油水冷卻器等冷卻裝置中的一種。 The thermoplastic glue is cured by cooling. The thermoplastic glue is cured by natural cooling at room temperature or by cooling the liquid glue by a cooling device to form a solid. The cold However, the device may be one of a cooling device such as a circulating water cooler, a hydraulic oil cooler or a water-oil cooler.

對於紫外光固化膠可採用紫外光照射的方法使其固化。所選用的紫外光的波長範圍及照射時間由所選用的紫外光固化膠的性質及使用量決定。 The UV curable adhesive can be cured by ultraviolet light irradiation. The wavelength range and exposure time of the selected UV light is determined by the nature and amount of UV curable glue selected.

可選擇地,所述固化液體膠的方法可以為任何磁、電、光、熱、聲等方法,只要所述方法可以將所選用的液體膠固化成為固態膠均屬於本發明所要求保護的範圍。 Alternatively, the method of curing the liquid glue may be any magnetic, electrical, optical, thermal, acoustic, etc., as long as the method can cure the selected liquid glue into a solid glue, which is within the scope of the present invention. .

本實施例中,固化所述液體矽膠的方法為在150ºC的溫度條件下加熱10分鐘使所述液體矽膠固化。由於部分液體膠滲入冷陰極的間隙中,因此固化後的液體膠與冷陰極的結合力較強。 In this embodiment, the method of curing the liquid silicone is to cure the liquid silicone by heating at a temperature of 150 ° C for 10 minutes. Since some of the liquid glue penetrates into the gap of the cold cathode, the binding force of the liquid glue after solidification to the cold cathode is strong.

在步驟S104中,去除所述固化後的液體膠的方法可以為直接揭去所述固化後的液體膠或用鑷子或其他工具將所述固化後的液體膠揭去。揭去固化後的液體膠,由於暴露於冷陰極表面的一維場發體與固化後的液體膠具有一定的結合力,在該結合力的作用下則可以使冷陰極表面的奈米碳管被豎立。若所述冷陰極中的粘結劑為半熔融態,則在揭去固化後的液體膠的過程的同時,會使與固化後的液體膠直接接觸的粘結劑顆粒粘附在固化後的液體膠的表面從而脫離冷陰極,從而使冷陰極表面的奈米碳管被暴露並豎立。因此,若所述冷陰極中的粘結劑為半熔融狀態時,則採用本發明對冷陰極進行表面處理不易產生留膠現象。 In step S104, the method of removing the cured liquid glue may be directly removing the cured liquid glue or peeling off the cured liquid glue with tweezers or other tools. The cured liquid glue is removed, and the one-dimensional field body exposed to the surface of the cold cathode has a certain binding force with the liquid glue after curing, and the carbon nanotube surface of the cold cathode surface can be made by the bonding force. Was erected. If the binder in the cold cathode is in a semi-molten state, the binder particles in direct contact with the cured liquid glue adhere to the cured product while the process of curing the liquid glue is removed. The surface of the liquid gel is thus detached from the cold cathode so that the carbon nanotubes on the surface of the cold cathode are exposed and erected. Therefore, if the binder in the cold cathode is in a semi-molten state, the surface treatment of the cold cathode by the present invention is less likely to cause a gel retention phenomenon.

本實施例中直接用手揭去所述固化後液體矽膠以使冷陰極表面的奈米碳管豎立。由於本實施例中所述冷陰極中的玻璃粉為半熔融態,固化後的矽膠同冷陰極結合力大於冷陰極中各組分之間的結合力。因此,在剝離矽膠的過程中,與矽膠直接接觸的部分冷陰極會粘附在矽膠表面而脫離冷陰極, 從而使奈米碳管被暴露並豎立,並且不易在冷陰極表面留下殘膠。 In the present embodiment, the cured liquid silicone is directly removed by hand to erect the carbon nanotubes on the surface of the cold cathode. Since the glass powder in the cold cathode in the embodiment is in a semi-molten state, the binding strength of the cured tantalum to the cold cathode is greater than the bonding force between the components in the cold cathode. Therefore, during the process of peeling off the silicone, part of the cold cathode that is in direct contact with the silicone adheres to the surface of the silicone and leaves the cold cathode. Thereby, the carbon nanotubes are exposed and erected, and it is difficult to leave residual glue on the surface of the cold cathode.

可選擇地,可於冷陰極的豎立的奈米碳管的表面形成一表面修飾層,所述表面修飾層的材料可以為碳化鋯或碳化鈦。所述表面修飾層的逸出功低於奈米碳管的逸出功。奈米碳管表面的表面修飾層可以有效降低奈米碳管場發射體發射端的逸出功。 Alternatively, a surface modification layer may be formed on the surface of the erected carbon nanotube of the cold cathode, and the surface modification layer may be made of zirconium carbide or titanium carbide. The work function of the surface modification layer is lower than the work function of the carbon nanotubes. The surface modification layer on the surface of the carbon nanotube can effectively reduce the work function of the emission end of the carbon nanotube field emitter.

本發明提供的冷陰極的表面處理方法具有以下優點:其一,本發明提供的冷陰極的表面處理方法無須精確控制溫度,因此,方法簡單、穩定、重複性及操作性強;其二,由於液體膠具有流動性,在冷陰極表面和液體膠之間即使存在有部分空氣,也可以通過液體膠排出,從而使暴露於冷陰極表面的一維場發射體與液體膠緊密接觸,不殘留氣泡,因此豎立冷陰極表面的一維場發射體的效率較高;其三,由於液體膠具有流動性,因此,可以處理各種冷陰極的表面,特別是膠帶不易處理或無法處理的凹槽及/或側面。 The surface treatment method of the cold cathode provided by the invention has the following advantages: First, the surface treatment method of the cold cathode provided by the invention does not need to accurately control the temperature, and therefore, the method is simple, stable, reproducible and operable; secondly, The liquid glue has fluidity, and even if there is a part of air between the surface of the cold cathode and the liquid glue, it can be discharged through the liquid glue, so that the one-dimensional field emitter exposed to the surface of the cold cathode is in close contact with the liquid glue, and no air bubbles remain. Therefore, the efficiency of the one-dimensional field emitter erecting the surface of the cold cathode is higher; thirdly, because the liquid glue has fluidity, it can handle the surface of various cold cathodes, especially the grooves which are difficult to handle or cannot be processed by the tape and/or Or side.

Claims (11)

一種冷陰極的表面處理方法,其包括以下步驟:提供一冷陰極,所述冷陰極包括複數一維場發射體及粘結劑;設置一液體膠於所述冷陰極表面;加熱固化所述液體膠,同時加熱冷陰極的粘結劑為半熔融態;去除冷陰極表面的固化後的液體膠,以使冷陰極表面的一維場發射體豎立。 A surface treatment method for a cold cathode, comprising the steps of: providing a cold cathode comprising a plurality of one-dimensional field emitters and a binder; disposing a liquid glue on the surface of the cold cathode; and heating and curing the The liquid glue, while the binder for heating the cold cathode is in a semi-molten state; the solidified liquid glue on the surface of the cold cathode is removed to erect the one-dimensional field emitter on the surface of the cold cathode. 如請求項1所述的冷陰極的表面處理方法,其中,所述一維場發射體包括具有場發射特性的奈米管、奈米線、奈米纖維、奈米棒及奈米帶中的一種或幾種。 The surface treatment method of the cold cathode according to claim 1, wherein the one-dimensional field emitter comprises a nanotube having a field emission characteristic, a nanowire, a nanofiber, a nanorod, and a nanobelt. One or several. 如請求項2所述的冷陰極的表面處理方法,其中,所述奈米線包括氧化物奈米線、氮化物奈米線或碳化物奈米線。 The surface treatment method of the cold cathode according to claim 2, wherein the nanowire comprises an oxide nanowire, a nitride nanowire or a carbide nanowire. 如請求項1所述的冷陰極的表面處理方法,其中,所述液體膠為熱固性膠。 The surface treatment method of the cold cathode according to claim 1, wherein the liquid glue is a thermosetting glue. 如請求項1所述的冷陰極的表面處理方法,其中,所述液體膠為液體矽膠,所述一維場發射體為奈米碳管。 The surface treatment method of the cold cathode according to claim 1, wherein the liquid glue is liquid silicone, and the one-dimensional field emitter is a carbon nanotube. 如請求項5所述的冷陰極的表面處理方法,其中,所述固化液體矽膠的方法為在150ºC的溫度條件下加熱10分鐘。 The surface treatment method of the cold cathode according to claim 5, wherein the method of curing the liquid silicone is heated at a temperature of 150 ° C for 10 minutes. 如請求項1所述的冷陰極的表面處理方法,其中,所述設置一液體膠於所述冷陰極表面的方法包括以下步驟:將液體膠傾倒於冷陰極表面;使液體膠在冷陰極表面流平。 The surface treatment method of the cold cathode according to claim 1, wherein the method of disposing a liquid glue on the surface of the cold cathode comprises the steps of: pouring a liquid glue onto a surface of a cold cathode; and bonding the liquid to a surface of the cold cathode. Leveling. 如請求項7所述的冷陰極的表面處理方法,其中,所述使液體膠在冷陰極表面流平的方法為使液體膠在冷陰極表面自然流平或旋轉所述冷陰極使 液體膠在冷陰極的表面流平。 The surface treatment method of the cold cathode according to claim 7, wherein the method of leveling the liquid glue on the surface of the cold cathode is to cause the liquid glue to naturally level or rotate the cold cathode on the surface of the cold cathode. The liquid glue leveles on the surface of the cold cathode. 如請求項1所述的冷陰極的表面處理方法,其中,所述去除所述固化後的液體膠的方法為直接揭去所述固化後的液體膠或用鑷子將所述固化後的液體膠揭去。 The method for surface treatment of a cold cathode according to claim 1, wherein the method of removing the cured liquid glue is to directly remove the cured liquid glue or use the forceps to melt the liquid glue. Uncover it. 如請求項1所述的冷陰極的表面處理方法,其中,所述冷陰極進一步包括一維場發射體、導電相及粘結劑中的一種或幾種。 The surface treatment method of the cold cathode according to claim 1, wherein the cold cathode further comprises one or more of a one-dimensional field emitter, a conductive phase, and a binder. 如請求項10所述的冷陰極的表面處理方法,其中,所述複數一維場發射體在冷陰極中隨機分布,至少部分一維場發射體至少部分暴露於冷陰極表面。 The method of surface treatment of a cold cathode according to claim 10, wherein the plurality of one-dimensional field emitters are randomly distributed in the cold cathode, and at least a portion of the one-dimensional field emitter is at least partially exposed to the surface of the cold cathode.
TW98131999A 2009-09-22 2009-09-22 Method for treating surface of cold cathode TWI407485B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040067602A1 (en) * 2002-08-23 2004-04-08 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
TW200519036A (en) * 2003-11-11 2005-06-16 Teco Nanotech Co Ltd A spray coating liquid of carbon nanotube and its spray coating method
CN1630002A (en) * 2003-12-16 2005-06-22 三星Sdi株式会社 Method of forming carbon nanotube emitter
TW200525699A (en) * 2004-01-20 2005-08-01 Teco Nanotech Co Ltd A method of forming pattern(totem) of nanometer carbon tube
US20070087475A1 (en) * 2005-10-14 2007-04-19 Masaki Kanazawa Method and apparatus for peeling surface protective film
US20070262687A1 (en) * 2006-01-03 2007-11-15 Nano-Proprietary, Inc. Curing binder material for carbon nanotube electron emission cathodes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040067602A1 (en) * 2002-08-23 2004-04-08 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
TW200519036A (en) * 2003-11-11 2005-06-16 Teco Nanotech Co Ltd A spray coating liquid of carbon nanotube and its spray coating method
CN1630002A (en) * 2003-12-16 2005-06-22 三星Sdi株式会社 Method of forming carbon nanotube emitter
TW200525699A (en) * 2004-01-20 2005-08-01 Teco Nanotech Co Ltd A method of forming pattern(totem) of nanometer carbon tube
US20070087475A1 (en) * 2005-10-14 2007-04-19 Masaki Kanazawa Method and apparatus for peeling surface protective film
US20070262687A1 (en) * 2006-01-03 2007-11-15 Nano-Proprietary, Inc. Curing binder material for carbon nanotube electron emission cathodes

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