TWI406806B - Method and apparatus for micromachining a material - Google Patents

Method and apparatus for micromachining a material Download PDF

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Publication number
TWI406806B
TWI406806B TW096122741A TW96122741A TWI406806B TW I406806 B TWI406806 B TW I406806B TW 096122741 A TW096122741 A TW 096122741A TW 96122741 A TW96122741 A TW 96122741A TW I406806 B TWI406806 B TW I406806B
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Taiwan
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illumination
location
radiation
image
wavelength
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TW096122741A
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Chinese (zh)
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TW200800792A (en
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Zvi Kotler
Eliezer Lipman
Golan Hanina
Boris Greenberg
Michael Zenou
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Orbotech Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/0015Orientation; Alignment; Positioning
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/0061Tools for holding the circuit boards during processing; handling transport of printed circuit boards
    • H05K13/0069Holders for printed circuit boards
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam

Abstract

A method for micromachining a material, including configuring an optical system to provide illumination of an illumination wavelength to a site via a given element of the optical system, the illumination generating returning radiation from the site. The method further includes configuring the optical system to receive the returning radiation via the given element, and to form an image of the site therefrom, calculating an actual position of a location at the site from the image and outputting a signal indicative of the actual position of the location, generating a beam of micromachining radiation having a micromachining wavelength different from the illumination wavelength, positioning the beam to form an aligned beam with respect to the location in response to the signal, and conveying the aligned beam to the location via at least the given element of the optical system so as to perform a micromachining operation at the location.

Description

用於微加工一材料之方法與裝置Method and apparatus for micromachining a material

雷射微加工尤其用於在印刷電路板(PCB)中形成孔。隨著PCB之元件尺寸之縮小,對雷射加工之定位及精度之要求不斷提高。Laser micromachining is especially useful for forming holes in printed circuit boards (PCBs). As the component size of the PCB shrinks, the requirements for the positioning and accuracy of laser processing continue to increase.

在本發明之一實施例中,提供一種在一部位處對一定位進行微加工之微加工裝置,該部位通常包含一嵌於印刷電路板(PCB)之電路絕緣基板中之物件,例如導電焊墊。該裝置包含一光學系統,該光學系統以一輻射源對該部位照明,因應該照明而自該部位接收返回輻射,並將一微加工光束自一光束源傳遞至該定位。在該光學系統中存在至少一個共用元件,例如一可操控之鏡,其用於所有三種功能。該輻射源與該光束源以不同之波長工作。該光束源通常為雷射器。該輻射源通常為雷射二極體,儘管在某些實施例中,該輻射源亦可為發光二極體(LED)。In an embodiment of the invention, there is provided a micromachining device for micromachining a location at a location, the portion typically comprising an object embedded in a circuit insulative substrate of a printed circuit board (PCB), such as a conductive solder pad. The apparatus includes an optical system that illuminates the portion with a source of radiation that receives return radiation from the portion as a function of illumination and transmits a micromachined beam from the source of the beam to the location. There is at least one common element in the optical system, such as a steerable mirror for all three functions. The source of radiation operates at a different wavelength than the beam source. The beam source is typically a laser. The source of radiation is typically a laser diode, although in some embodiments, the source of radiation may be a light emitting diode (LED).

一影像感測器使用返回輻射對該部位成像,且一處理器根據該影像來計算所要微加工之定位(例如導電焊墊之中心)之實際位置。該處理器產生一指示該實際位置之信號,並使用該信號將微加工光束相對於該定位對準-通常係藉由調整該可操控之鏡。然後,該處理器操作光束源來使用對準之光束對該定位微加工。該光束可在定位上微加工出實質呈任意形狀之孔。藉由對部位照明、部位成像及光束傳遞功能使用至少一個共用元件,該裝置能夠向該部位提供局部高強度照明,由此形成該部位之良好影像,並因而迅速、精確地將微加工光束對準該定位。An image sensor images the portion using return radiation, and a processor calculates an actual position of the location of the desired micromachining (eg, the center of the conductive pad) based on the image. The processor generates a signal indicative of the actual position and uses the signal to align the micromachined beam with respect to the position - typically by adjusting the steerable mirror. The processor then operates the beam source to micromachine the location using the aligned beam. The beam can be micromachined into a substantially arbitrary shape of the hole in the positioning. By using at least one common component for site illumination, site imaging, and beam transfer functions, the device is capable of providing local high intensity illumination to the site, thereby forming a good image of the site, and thus rapidly and accurately pairing the micromachined beam It is necessary to locate.

通常,該裝置用於在PCB中之多個部位進行微加工,其中各部位具有不同之位置。對於每一部位,該處理器皆可藉由例如分析該電路之電腦輔助製造(CAM)檔案來計算所要微加工之定位之名義座標,並使用該等名義座標對基板定位,藉以使該部位在名義上與光束及照明對準。在每一部位上,皆如上所述確定光束之實際位置。對於該多個部位中之至少某些部位,藉由僅操作可操控之鏡來實施光束在各部位間之重新對準,由此提高對PCB微加工之速率,同時保持使光束對於所有部位皆精確對準。Typically, the device is used for micromachining in multiple locations in a PCB where each location has a different location. For each part, the processor can calculate the nominal coordinates of the positioning of the desired micromachining by, for example, analyzing a computer aided manufacturing (CAM) file of the circuit, and positioning the substrate using the nominal coordinates, thereby causing the portion to be Nominally aligned with the beam and illumination. At each location, the actual position of the beam is determined as described above. For at least some of the plurality of locations, the realignment of the beam between the various portions is performed by operating only the steerable mirror, thereby increasing the rate of micromachining of the PCB while maintaining the beam for all locations Exact alignment.

在一所揭示之實施例中,該影像感測器獲得該光束照到該部位上之局域之影像,通常係藉由由該處理器以低於該部位之燒蝕臨限值之低功率操作該光束源來進行。處理器根據該部位之影像及光束所照到之局域之影像,確定要對該光束應用之偏移量,藉以執行上文所述之光束對準。In one disclosed embodiment, the image sensor obtains a local image of the beam onto the location, typically by the processor having a low power below the ablation threshold of the portion. The beam source is operated to perform. The processor determines the offset to be applied to the beam based on the image of the portion and the localized image of the beam, thereby performing beam alignment as described above.

在某些實施例中,輻射源可產生螢光輻射作為返回輻射,且影像感測器根據該螢光輻射形成該部位之及/或一校準目標之影像。處理器可通常根據該部位之螢光特性來調整輻射源之波長及/或及功率。可實施該調整來使輻射源之輻射穿透該部位及/或環繞該部位之區域,藉以使自螢光輻射得到之該部位之影像最佳。使用螢光輻射會消除若輻射源為雷射器時之斑點問題。In some embodiments, the radiation source can generate fluorescent radiation as return radiation, and the image sensor forms an image of the portion and/or a calibration target based on the fluorescent radiation. The processor can typically adjust the wavelength and/or power of the radiation source based on the fluorescent characteristics of the portion. This adjustment can be implemented to cause radiation from the radiation source to penetrate the portion and/or the area surrounding the portion, thereby optimizing the image of the portion from the fluorescent radiation. The use of fluorescent radiation eliminates speckle problems if the source is a laser.

在本發明之一替代實施例中,輻射源之輻射線性偏振,且可對返回輻射進行偏振分析。對於包含所嵌入導電物體之部位,由於該物體之表面粗糙度,來自該物體之返回輻射通常至少部分地消偏振。因此,影像感測器能夠形成物體相對於其周圍環境(其返回輻射通常不被消偏振)之具有良好反差之影像。In an alternate embodiment of the invention, the radiation of the radiation source is linearly polarized and polarization analysis can be performed on the return radiation. For a portion containing the embedded conductive object, the return radiation from the object is typically at least partially depolarized due to the surface roughness of the object. Thus, the image sensor is capable of forming an image of a good contrast of the object relative to its surroundings, whose return radiation is typically not depolarized.

在本發明之又一替代實施例中,該輻射源包含一雷射器,該雷射器產生具有短之相干長度之相關光束,以實質消除斑點效應。另一選擇為,或者另外,該輻射源包含用於減小及/或消除斑點之其他組件,例如具有不同光波長之複數個光纖。In still another alternative embodiment of the invention, the radiation source includes a laser that produces an associated beam of light having a short coherence length to substantially eliminate speckle effects. Alternatively, or in addition, the source of radiation includes other components for reducing and/or eliminating speckle, such as a plurality of fibers having different wavelengths of light.

在另一所揭示實施例中,該輻射源用以使用結構化照明(例如藉由在該部位處形成以一物體為中心之圓環)來照明該部位,且基板係漫射性的。圓環照射與漫射性基板相組合會有效地對物體「從背後照明」。In another disclosed embodiment, the source of radiation is used to illuminate the portion using structured illumination (e.g., by forming an object-centered ring at the location), and the substrate is diffusive. The combination of circular illumination and a diffusing substrate effectively "backlit" the object.

因此,根據本發明之一實施例,提供一種用於微加工一材料之方法,其包含:配置一光學系統,以藉由該光學系統之一給定元件對該材料之一部位提供處於一照明波長之照明,該照明自該部位產生返回輻射;配置該光學系統,以藉由該給定元件接收該返回輻射,並據此形成該部位之一影像;根據該影像計算該部位處一定位之實際位置,並輸出一指示該定位之實際位置之信號;產生一微加工輻射光束,其具有不同於該照明波長之一微加工波長;因應該信號而相對於該定位確定該光束之位置,以形成對準光束;經由該光學系統之至少該給定元件將該對準光束傳遞至該定位,以便在該定位處執行一微加工操作。Thus, in accordance with an embodiment of the present invention, a method for micromachining a material is provided, comprising: configuring an optical system to provide an illumination of a portion of the material by a given component of the optical system a wavelength illumination that generates return radiation from the portion; the optical system configured to receive the return radiation by the given component and thereby form an image of the portion; and calculate a location at the location based on the image Actual position, and outputting a signal indicative of the actual position of the positioning; generating a micromachined radiation beam having a micromachining wavelength different from one of the illumination wavelengths; determining the position of the beam relative to the location in response to the signal, An alignment beam is formed; the alignment beam is delivered to the location via at least the given element of the optical system to perform a micromachining operation at the location.

通常,該部位包含嵌於一個或多個絕緣基板中之一物體,且對該部位提供照明可包含提供僅對環繞該物體之一區域進行照明之結構化照明。該結構化照明可由一衍射元件形成。Typically, the portion includes an object embedded in one or more of the insulative substrates, and providing illumination to the portion can include providing structured illumination that only illuminates an area surrounding the object. The structured illumination can be formed by a diffractive element.

在一實施例中,對該部位提供照明包含將該照明波長選擇成一使該部位發出螢光之波長,且該返回輻射包含因應所提供之照明而於該部位處產生之螢光輻射。該方法可包含過濾該螢光輻射,以使該部位之影像最佳。In one embodiment, providing illumination to the portion includes selecting the illumination wavelength to be a wavelength that causes the portion to emit fluorescence, and the return radiation comprises fluorescent radiation generated at the portion in response to the provided illumination. The method can include filtering the fluorescent radiation to optimize the image of the portion.

在一替代實施例中,對該部位提供照明包含對該部位提供偏振照明,且形成該部位之影像包含對來自該部位之返回輻射進行偏振分析。In an alternate embodiment, providing illumination to the portion includes providing polarized illumination to the portion, and forming an image of the portion includes polarization analysis of return radiation from the portion.

在某些實施例中,該給定元件包含一可操控之鏡,該部位可包含要在其中執行微加工之複數個不同子部位,且確定該光束之位置可包含藉由僅操控該鏡來將光束射至該複數個不同子部位。In some embodiments, the given element includes a steerable mirror, the portion can include a plurality of different sub-portions in which micromachining is to be performed, and determining the position of the beam can include by only manipulating the mirror The beam is directed to the plurality of different sub-portions.

在又一替代實施例中,該給定元件包含一光學元件串,該光學元件串用以將光束及照明聚焦至該部位。In yet another alternative embodiment, the given element includes a string of optical elements for focusing the beam and illumination to the location.

該部位可包含一部位區域,且對該部位提供照明可包含對該部位區域及對不大於該部位區域且與其鄰近之另一區域提供照明。通常,形成影像可包含在一影像感測器上形成影像,且該照明可具有能在3毫秒或更短時間內在影像感測器上產生影像之強度。形成影像可包含在具有一像素陣列之影像感測器上形成影像,並因應該區域及該另一區域而自陣列中選擇像素以分析影像。The location can include a location area, and providing illumination to the location can include providing illumination to the location area and to another area that is no greater than the location area and adjacent thereto. Typically, forming an image can include forming an image on an image sensor, and the illumination can have an intensity that produces an image on the image sensor in less than 3 milliseconds or less. Forming an image can include forming an image on an image sensor having a pixel array and selecting pixels from the array to analyze the image in response to the region and the other region.

該方法還包含在對該部位提供照明之前確定該定位之一名義位置,並因應該名義位置而提供照明。The method also includes determining a nominal location of the location prior to providing illumination to the location and providing illumination in response to the nominal location.

在再一替代實施例中,產生該微加工輻射光束包含:產生一低功率光束,該光束之功率低於該部位之燒蝕臨限值;將該低功率光束傳遞至該部位;以及因應該低功率光束在該部位之一影像而確定該光束之一偏移量。In still another alternative embodiment, generating the micromachined radiation beam comprises: generating a low power beam having a power below an ablation threshold of the portion; transmitting the low power beam to the portion; The low power beam is imaged at one of the locations to determine an offset of the beam.

通常,確定該光束之位置包含因應該偏移量而確定該光束之位置,且將已確定位置之光束傳遞至該定位包含將該光束設定成具有等於或大於該燒蝕臨限值之一功率。Typically, determining the position of the beam includes determining the position of the beam due to the amount of offset, and transmitting the beam of the determined position to the location includes setting the beam to have a power equal to or greater than one of the ablation thresholds .

該方法可包含將該照明波長配置成具有使該部位為非吸收性之一值。The method can include configuring the illumination wavelength to have a value that renders the site non-absorbent.

在一替代之所揭示實施例中,該部位包含一外表面,且對該部位提供照明包含以垂直於該外表面之成像輻射對該部位照明。In an alternate disclosed embodiment, the portion includes an outer surface, and providing illumination to the portion includes illuminating the portion with imaging radiation perpendicular to the outer surface.

對該部位提供照明可包含在該部位提供相干成像輻射,該相干成像輻射具有等於或小於該部位尺寸之二倍之相干長度。Illuminating the portion can include providing coherent imaging radiation at the location, the coherent imaging radiation having a coherence length equal to or less than twice the size of the portion.

在再一替代之所揭示實施例中,計算實際位置包含:根據該部位之一預期影像提供一理論關係;根據該影像確定一實際關係;及將該實際關係擬合至該理論關係。In yet another alternative disclosed embodiment, calculating the actual position comprises: providing a theoretical relationship based on the expected image of the portion; determining an actual relationship based on the image; and fitting the actual relationship to the theoretical relationship.

形成該部位之影像可包含調整照明波長與照明之功率中之至少一者,以便改變照明在該部位處之穿透深度。Forming the image of the portion can include adjusting at least one of an illumination wavelength and a power of illumination to change a penetration depth of the illumination at the location.

在一實施例中,該部位包含嵌入一漫射層中之一物體,且該方法包含補償由嵌入漫射層中之物體所形成之影像而造成之偏差。In one embodiment, the portion includes an object embedded in a diffusing layer, and the method includes compensating for a deviation caused by an image formed by an object embedded in the diffusing layer.

根據本發明之一實施例,更提供一種用於微加工一材料之方法,包含:操作一源,以對該材料中包含一定位之一部位提供一輻射光束,該輻射光束處於一使該材料發出螢光之工作波長,且處於不足以進行微加工之一光束功率,以便自該部位產生螢光輻射;因應該螢光輻射而形成該部位之一影像;因應該影像而相對於該定位確定該光束之位置;以及操作該源,以對該定位提供該輻射光束,該輻射光束處於該工作波長且處於足以促成對該定位之微加工之一微加工功率。In accordance with an embodiment of the present invention, a method for micromachining a material is provided, comprising: operating a source to provide a radiation beam to a portion of the material that includes a location, the radiation beam being at a material Generating the operating wavelength of the fluorescent light, and is insufficient to micro-process one of the beam powers to generate fluorescent radiation from the portion; forming an image of the portion due to the fluorescent radiation; determining the image relative to the positioning Positioning the beam; and operating the source to provide the radiation beam to the location, the radiation beam being at the operating wavelength and at a micromachining power sufficient to facilitate micromachining of the location.

通常,以該光束功率操作該源包含經由一光束導向光學系統對該部位提供該輻射光束,且形成該影像包括經由該光束導向光學系統之至少一個元件將該螢光輻射傳送至一影像感測器。該方法可包括過濾該螢光輻射,以使該部位之影像最佳。Typically, operating the source at the beam power comprises providing the radiation beam to the portion via a beam directing optical system, and forming the image includes transmitting the fluorescent radiation to an image sensing via at least one component of the beam directing optical system Device. The method can include filtering the fluorescent radiation to optimize the image of the portion.

根據本發明之一實施例,更提供一種用於微加工一材料之裝置,其包含:一輻射源,其用以藉由一光學系統之一給定元件對該材料之一部位提供處於一照明波長之照明,該照明自該部位產生返回輻射;一影像感測器,其用以藉由該給定元件接收該返回輻射,並據此形成該部位之一影像;一光束源,其用以產生一微加工輻射光束,該微加工輻射光束具有不同於該照明波長之一微加工波長;及一處理器,其用以根據該影像計算該部位處一定位之實際位置,並輸出一指示該定位之實際位置之信號,因應該信號而相對於該定位確定該光束之位置以形成對準光束,及操作該光束源,以經由該光學系統之至少該給定元件將該對準光束傳遞至該定位,藉以在該定位處執行一微加工操作。According to an embodiment of the present invention, there is further provided an apparatus for micromachining a material, comprising: a radiation source for providing illumination to a portion of the material by a given component of an optical system a wavelength illumination that produces return radiation from the portion; an image sensor for receiving the return radiation by the given component and thereby forming an image of the portion; a beam source for Generating a micromachined radiation beam having a micromachining wavelength different from one of the illumination wavelengths; and a processor for calculating an actual position of the location at the location based on the image and outputting an indication a signal of the actual position of the position, the position of the beam is determined relative to the position of the signal to form an alignment beam, and the beam source is operated to transmit the alignment beam to at least the given element via the optical system The positioning is performed by performing a micromachining operation at the location.

該裝置可包含一組濾光片,其用以過濾該螢光輻射,且該處理器可用以選擇該組中之一者,以使該部位之影像最佳。The device can include a set of filters for filtering the fluorescent radiation, and the processor can be used to select one of the groups to optimize the image of the portion.

照明可包含偏振照明,且該裝置可包含一偏振元件,其使影像感測器能夠對來自該部位之返回輻射進行偏振分析。The illumination can include polarized illumination, and the device can include a polarizing element that enables the image sensor to perform polarization analysis of the return radiation from the portion.

該給定元件可包含一可操控之鏡。The given element can include a steerable mirror.

或者,該給定元件可包含一光學元件串,其用以將光束及照明聚焦至該部位。Alternatively, the given element can include a string of optical elements for focusing the beam and illumination to the location.

根據本發明之一實施例,更提供一種用於微加工一材料之裝置,其包含:一光束源,其用以對該材料中包含一定位之一部位提供一輻射光束,該輻射光束處於使該材料發出螢光之一工作波長,且處於不足以進行微加工之一光束功率,藉以自該定位產生螢光輻射;一影像感測器,其用以因應該螢光輻射而形成該部位之一影像;及一處理器,其用以因應該影像而相對於該定位確定該光束之位置,並操作該光束源,以便以該工作波長及一微加工功率對該定位提供該輻射光束,該微加工功率足以促成對該定位之微加工。According to an embodiment of the present invention, there is further provided an apparatus for micromachining a material, comprising: a beam source for providing a radiation beam to a portion of the material including a location, the radiation beam being The material emits one of the operating wavelengths of the fluorescent light and is insufficient for one of the beam powers for micromachining to generate fluorescent radiation from the positioning; an image sensor for forming the portion in response to the fluorescent radiation An image; and a processor for determining a position of the light beam with respect to the positioning in response to the image, and operating the beam source to provide the radiation beam to the positioning at the operating wavelength and a micromachining power, The micromachining power is sufficient to facilitate micromachining of the positioning.

該裝置可包含一光束導向光學系統,且以該光束功率操作該光束源可包含藉由該光束導向光學系統對該部位提供該輻射光束,且形成該影像可包括藉由該光束導向光學系統之至少一個元件將該螢光輻射傳送至影像感測器。The apparatus can include a beam directing optical system, and operating the beam source at the beam power can include providing the radiation beam to the portion by the beam directing optical system, and forming the image can include directing the optical system by the beam At least one component transmits the fluorescent radiation to the image sensor.

該裝置可包含一組濾光片,其用以過濾該螢光輻射,且該處理器可用以選擇該組中之一者,以使該部位之影像最佳。The device can include a set of filters for filtering the fluorescent radiation, and the processor can be used to select one of the groups to optimize the image of the portion.

結合附圖閱讀下文對本發明實施例之詳細說明,將能更全面地理解本發明,下面將對附圖予以簡要說明。The invention will be more fully understood from the following detailed description of embodiments of the invention.

現在參見第1圖,其係根據本發明一實施例之一光束對準裝置20之示意圖。裝置20用於微加工一部位43,在下文中,例如假定部位43包含於一印刷電路板(PCB)24中。部位43通常包含絕緣基板材料(例如帶有玻璃珠及/或纖維之環氧樹脂)及/或導電材料(例如銅焊墊或迹線)。通常,儘管未必盡然,部位43包含嵌於絕緣基板材料中之導電材料。裝置20包含一光束源22,其經由一準直器27投射一輻射光束26。光束26用於在部位43中之定位處微加工一孔。在一實施例中,源22包含以約350奈米之光束波長工作之一紫外線(UV)雷射器。該UV雷射器可作為使用短脈衝之非線性相互作用來引起燒蝕之一短脈衝雷射器工作,該等脈衝之長度處於毫微微秒數量級。在一替代實施例中,源22包含一以約10微米之光束波長工作之二氧化碳雷射器。然而,裝置20可使用任何可經配置而提供部位43所能吸收之輻射能之適當輻射源,所述輻射能之形式及能級可用於微加工。在下文中,作為實例,假定源22包含一雷射器,因而光束26係為雷射器輻射光束。一組31光學組件包含一分束鏡28、一光學元件串30及一鏡34,其用作一光束導向系統來將光束傳遞至PCB上。通常,鏡34係一正面鏡,且分束鏡28係一窄帶二向色立體角分束鏡,其透射光束波長並反射其他波長。光學元件串30及PCB 24安裝於各自之平移平臺33、45上。鏡34安裝於一光束操控平臺35上,光束操控平臺35通常係基於檢流計之操控平臺,或者如在第11/472,325號美國專利申請案中所述之二軸式快速光束操控平臺。第11/472,325號美國專利申請案讓於本發明之受讓人,並以引用方式併入本文中。雷射光束26藉由分束鏡傳輸至光學元件串,由光學元件串引導並聚焦該光束。Referring now to Figure 1, a schematic diagram of a beam alignment device 20 in accordance with one embodiment of the present invention. The device 20 is used to micromachine a portion 43, hereinafter, for example, assuming that the portion 43 is contained in a printed circuit board (PCB) 24. The portion 43 typically comprises an insulating substrate material (eg, epoxy with glass beads and/or fibers) and/or a conductive material (eg, a copper pad or trace). Typically, although not necessarily, the portion 43 comprises a conductive material embedded in an insulating substrate material. Device 20 includes a beam source 22 that projects a beam of radiation 26 via a collimator 27. Light beam 26 is used to micromachine a hole in the location in location 43. In one embodiment, source 22 includes an ultraviolet (UV) laser that operates at a beam wavelength of about 350 nm. The UV laser can operate as a short pulse laser that uses a nonlinear interaction of short pulses to cause ablation, the length of which is on the order of femtoseconds. In an alternate embodiment, source 22 includes a carbon dioxide laser that operates at a beam wavelength of about 10 microns. However, device 20 can use any suitable source of radiation that can be configured to provide the radiant energy that portion 43 can absorb, the form and level of which can be used for micromachining. In the following, as an example, it is assumed that the source 22 comprises a laser, and thus the beam 26 is a laser beam of radiation. A set of 31 optical components includes a beam splitter 28, an optical element string 30, and a mirror 34 that acts as a beam steering system to deliver the beam to the PCB. Typically, mirror 34 is a front mirror and beam splitter 28 is a narrow band dichroic solid angle beam splitter that transmits the wavelength of the beam and reflects other wavelengths. The optical element string 30 and the PCB 24 are mounted on respective translation stages 33,45. The mirror 34 is mounted on a beam steering platform 35, which is typically based on a galvanometer control platform or a two-axis fast beam steering platform as described in U.S. Patent Application Serial No. 11/472,325. U.S. Patent Application Serial No. Ser. The laser beam 26 is transmitted to the string of optical elements by a beam splitter, guided by the string of optical elements and focused.

裝置20係配置成一「後掃描」系統,其中在鏡34與PCB 24間不存在光學元件。在此種配置中,該鏡之視場通常約為±3°。Device 20 is configured as a "post-scan" system in which no optical components are present between mirror 34 and PCB 24. In this configuration, the field of view of the mirror is typically about ±3°.

除非另外指明外,下文說明著重於使用一個雷射光束對PCB 24微加工。然而,應瞭解,本發明之實施例可實質上同時使用不止一個雷射光束進行操作。Unless otherwise indicated, the following description focuses on micromachining the PCB 24 using a laser beam. However, it should be understood that embodiments of the present invention can operate using substantially more than one laser beam simultaneously.

操作員23使用一工作站21操作裝置20,工作站21包含一記憶體25及一處理單元(PU)32。PU 32使用存儲於記憶體25中之指令來控制裝置20之各個元件,例如雷射器22及平移和光束操控平臺。除操作平臺33、35以外,當正在部位43中,微加工一特定孔時,PU 32還可改變光學元件串30之焦點。該孔係在PCB 24之頂面36上之所選區42中微加工。插圖44更詳細地顯示部位43,其包含區42及環繞該區之一區域。The operator 23 operates the device 20 using a workstation 21 that includes a memory 25 and a processing unit (PU) 32. The PU 32 uses the instructions stored in the memory 25 to control various components of the device 20, such as the laser 22 and the translation and beam steering platform. In addition to the operating platforms 33, 35, the PU 32 can also change the focus of the string of optical elements 30 when a particular hole is being machined in the portion 43. The holes are micromachined in selected regions 42 on top surface 36 of PCB 24. The inset 44 shows the portion 43 in more detail, which includes a region 42 and an area surrounding the region.

在本發明之某些實施例中,一物體46位於區42下面,該物體嵌於PCB 24中,因而PCB中存在位於物體上面之一層38及位於物體下面之一層40。通常,還有其他嵌式物體接近物體46,且在PCB 24中還可包含其他層,但為清楚起見,在第1圖中未顯示該等其他嵌式物體及層。物體46通常係一電路之一部分,且層38及40用作基板,該電路即形成於該基板上。在一實施例中,物體46係大致圓形之金屬焊墊,其直徑大致為100微米。通常,層38及40為電介質,且由填充之環氧樹脂製成。在某些所揭示實施例中,假定層38及40係由位於NJ之Ajinomoto Fine-Techno公司製造之各種Ajinomoto累積膜(ABF)中之一種製成,該等Ajinomoto累積膜(ABF)在此項技術中衆所習知,且將在下文中參照第2圖及第3圖加以說明。在一實施例中,層38及40係由GX3型ABF構造而成,且厚度大致為35微米。然而,應瞭解,層38及40可由適於構造印刷電路板之任何材料製成。例如,層38可包含一ABF材料,而層40可包含FR4材料。In some embodiments of the invention, an object 46 is located below the area 42 and the object is embedded in the PCB 24 such that there is a layer 38 on the substrate and a layer 40 below the object. In general, there are other embedded objects that are proximate to the object 46, and other layers may be included in the PCB 24, but for clarity, such other embedded objects and layers are not shown in FIG. Object 46 is typically part of a circuit and layers 38 and 40 are used as substrates on which the circuit is formed. In one embodiment, object 46 is a generally circular metal pad having a diameter of approximately 100 microns. Typically, layers 38 and 40 are dielectric and are made of filled epoxy. In certain disclosed embodiments, layers 38 and 40 are assumed to be made of one of various Ajinomoto cumulative films (ABF) manufactured by Ajinomoto Fine-Techno, Inc. of NJ, such Ajinomoto cumulative film (ABF) It is well known in the art and will be described below with reference to Figures 2 and 3. In one embodiment, layers 38 and 40 are constructed of GX3 type ABF and have a thickness of approximately 35 microns. However, it should be understood that layers 38 and 40 can be made of any material suitable for constructing a printed circuit board. For example, layer 38 can comprise an ABF material and layer 40 can comprise an FR4 material.

為使PU 32可對準PCB 24,由來自一輻射源50之照明來照明PCB,輻射源50通常係一雷射二極體,其提供處於成像輻射波長之成像輻射。在某些實施例中,源50包含發光二極體(LED),通常係高亮度LED。若源50包含雷射二極體,則該源通常包含斑點消除系統,例如一束光纖。另一選擇為,或者另外,可如在下文中所述將該源選擇成具有短之相干長度。裝置20包含一第二二向色分束鏡52,其對光束波長透明並用作處於成像輻射波長之一大致50/50之分束鏡。在如下文所述之本發明之某些實施例中,分束鏡52包含一偏振分束鏡。成像輻射經由一聚焦透鏡系統49藉由分束鏡52傳遞,以便大體與光束26同軸。成像輻射自鏡34反射,藉以使PCB 24處之成像輻射實質垂直於表面36。到達表面36之成像輻射係配置成照亮一環繞並與區42鄰近之相對小之區域,而非該表面上之一擴展區域,該區域通常係所正微加工之部位之面積之大約四倍左右。例如,對於上文所述之100微米之實例性焊墊,聚焦透鏡系統49可配置成在直徑大致為200微米左右之圓中提供成像輻射。To align the PU 32 with the PCB 24, the PCB is illuminated by illumination from a source 50, which is typically a laser diode that provides imaging radiation at the wavelength of the imaging radiation. In some embodiments, source 50 comprises a light emitting diode (LED), typically a high brightness LED. If source 50 contains a laser diode, the source typically includes a spot removal system, such as a bundle of fibers. Alternatively, or in addition, the source can be selected to have a short coherence length as described below. Apparatus 20 includes a second dichroic beam splitter 52 that is transparent to the wavelength of the beam and used as a beam splitter at approximately one-half of the wavelength of the imaging radiation. In some embodiments of the invention as described below, the beam splitter mirror 52 includes a polarization beam splitter mirror. Imaging radiation is transmitted via a focusing lens system 49 via a beam splitter 52 to be generally coaxial with the beam 26. The imaging radiation is reflected from the mirror 34 whereby the imaging radiation at the PCB 24 is substantially perpendicular to the surface 36. The imaging radiation reaching the surface 36 is configured to illuminate a relatively small area that is circumferentially adjacent to the region 42 rather than an extended region on the surface that is typically about four times the area of the portion being micromachined. about. For example, for the 100 micron exemplary pad described above, the focusing lens system 49 can be configured to provide imaging radiation in a circle having a diameter of approximately 200 microns.

藉由將成像輻射配置成照亮一環繞要執行微加工之定位之相對小之區域,可將高強度照明輻射高效地提供至該區域,藉以可產生該區域之高品質影像。藉由經由裝置20中亦用於將微加工光束26導向至所正微加工之區域之元件對成像輻射進行導向,當使裝置20重新對準以對新之區域微加工時,高強度照明輻射會自動地重新對準新之區域。此外,如下文所述,用於成像之返回輻射亦經由裝置20中對光束26及照明輻射進行導向之共用元件返回,因而當使裝置20重新對準以微加工新之區域時,亦會對新之區域自動成像。如在下文中所更詳細解釋,上述特徵組合使本發明實施例能夠實質即時地使光束26對準其部位,由此提供PCB 24之總體微加工速率。By aligning the imaging radiation to illuminate a relatively small area surrounding the location at which micromachining is to be performed, high intensity illumination radiation can be efficiently provided to the area, thereby producing a high quality image of the area. By directing the imaging radiation through elements of the device 20 that are also used to direct the micromachined beam 26 to the region being positively micromachined, high intensity illumination radiation is achieved when the device 20 is realigned to micromachine the new region. The new area will be automatically realigned. Moreover, as will be described below, the return radiation for imaging is also returned via the common element of device 20 that directs beam 26 and illumination radiation, thus when realigning device 20 to micromachine a new region, New area automatic imaging. As explained in more detail below, the combination of features described above enables embodiments of the present invention to substantially simultaneously align beam 26 with portions thereof, thereby providing an overall micromachining rate for PCB 24.

來自部位43之返回輻射由鏡34經由分束鏡52反射至光學元件串30,如由箭頭54所示意性顯示,並自光學元件串傳送至分束鏡28。串30經由分束鏡28及聚焦透鏡55並視需要經由一濾光片系統53將返回輻射導向一光學感測器56,濾光片系統53通常包含一組可選濾光片,包括帶通濾光片及長通濾光片。如在下文中所述,若部位43產生螢光輻射,可利用此一濾光片系統。對於存在於部位43中之物體(例如物體46),感測器56用以根據物體之定位向PU 32提供信號,且處理單元使用該等信號使光束26相對於PCB 24及物體正確地對準及定向。將參照第5A、5B及5C圖對感測器56之運行予以更詳細說明。The return radiation from the portion 43 is reflected by the mirror 34 via the beam splitter 52 to the optical element string 30, as indicated by the arrow 54 and transmitted from the optical element string to the beam splitter 28. The string 30 is directed to the optical sensor 56 via the beam splitter 28 and the focusing lens 55 and optionally via a filter system 53. The filter system 53 typically includes a set of optional filters, including bandpasses. Filters and long pass filters. As described below, if the site 43 produces fluorescent radiation, such a filter system can be utilized. For objects present in the portion 43 (e.g., object 46), the sensor 56 is configured to provide a signal to the PU 32 based on the location of the object, and the processing unit uses the signals to properly align the beam 26 with respect to the PCB 24 and the object. And orientation. The operation of the sensor 56 will be described in more detail with reference to Figures 5A, 5B and 5C.

在某些實施例中,源50用於自部位43產生螢光返回輻射,以尤其使自返回輻射形成之影像固有地不存在斑點。第10/793,224號美國專利申請案即說明螢光影像之產生,其讓於本發明之受讓人並以引用方式併入本文中。在此等情形中,源50可較佳包含一以大致405奈米工作之雷射二極體,且通常可不需要斑點消除系統。此外,分束鏡52可較佳配置成二向色分束鏡,反射來自源50之輻射並透射光束26及螢光返回輻射。較佳地,PU 32可用以調整源50所產生之成像輻射之波長及/或功率。藉由調整波長及/或功率,可改變成像輻射穿透入部位43內之有效深度,藉以使螢光輻射所產生之影像可最佳化。若部位43包含一不發出螢光之物體,例如金屬焊墊,則以螢光輻射產生影像會增強影像之反差。由於如在下文中所解釋,部位43通常包含具有不同螢光特性之層,因而PU 32及/或操作員23可自濾光片組53中選取濾光片來使影像最佳化。In some embodiments, source 50 is used to generate fluorescent return radiation from portion 43 to, in particular, inherently free of spots from the image formed by the return radiation. The production of fluorescent images is described in U.S. Patent Application Serial No. 10/793,224, the disclosure of which is incorporated herein by reference. In such cases, source 50 may preferably comprise a laser diode operating at approximately 405 nm, and generally does not require a speckle removal system. Additionally, beam splitter mirror 52 can preferably be configured as a dichroic beam splitter mirror that reflects radiation from source 50 and transmits beam 26 and fluorescent return radiation. Preferably, PU 32 can be used to adjust the wavelength and/or power of the imaging radiation produced by source 50. By adjusting the wavelength and/or power, the effective depth of imaging radiation into the site 43 can be varied to optimize the image produced by the fluorescent radiation. If the portion 43 contains an object that does not emit fluorescence, such as a metal pad, generating an image with fluorescent radiation enhances the contrast of the image. Since the portion 43 typically includes layers having different fluorescent characteristics, as explained below, the PU 32 and/or the operator 23 can select filters from the filter set 53 to optimize the image.

在某些實施例中,將源50選擇成具有對PCB實質透明之工作波長或波長範圍,例如在下文中參照第2圖所給出之波長。在此種情形中,通常對於至少部分呈鏡面之物體46,可反襯相對暗之背景使物體成像為亮之物體。當將相對長之源波長(例如在下文中參照第2圖給出)與對該等波長相對透明之材料(例如SH9K ABF樹脂、GX3 ABF樹脂或GX13 ABF樹脂)一起使用時,便可產生此種類型之「亮場」成像。In some embodiments, source 50 is selected to have a working wavelength or range of wavelengths that are substantially transparent to the PCB, such as the wavelengths given below with reference to FIG. In such a case, typically for at least a portion of the mirrored object 46, the object can be imaged as a bright object against a relatively dark background. This type can be produced when a relatively long source wavelength (as given hereinafter in Figure 2) is used with materials that are relatively transparent to such wavelengths (for example, SH9K ABF resin, GX3 ABF resin or GX13 ABF resin). Type "bright field" imaging.

通常,PU 32使用平移台45對PCB 24執行粗略對準,並使用平臺33及35執行精微對準,以使區42處於表面36上之所需位置,並使光束26相對於該表面處於所需定向上。然而,亦可使用平移平臺33、45及光束操控平臺35之操作之任何其他方便之組合對光束26進行定位及定向。Typically, the PU 32 performs a coarse alignment of the PCB 24 using the translation stage 45 and performs fine alignment using the stages 33 and 35 such that the area 42 is at the desired location on the surface 36 and the beam 26 is in a position relative to the surface. Need to be oriented. However, the beam 26 can also be positioned and oriented using any other convenient combination of translational stages 33, 45 and operation of the beam steering platform 35.

為使用光束26在PCB 24中微加工一孔,所加工之材料需要至少部分地進行有效吸收,以吸收光束之能量。此種有效吸收可由PCB樹脂在光束波長下對光束之吸收、或由包含於樹脂中之物體(例如玻璃微粒或纖維)、或由嵌於PCB中之物體(例如物體46)對光束之吸收來實現。另一選擇為,或者另外,在上文所提及之短脈衝雷射器情況下,對光束之有效吸收可藉由短脈衝與PCB樹脂或所嵌入物體之非線性相互作用來實現。一般而言,由於微加工係藉由燒蝕PCB之某些部分而起作用,因而微加工之效率隨對光束之有效吸收之增加而提高。To micromachine a hole in the PCB 24 using the beam 26, the material being processed needs to be at least partially effectively absorbed to absorb the energy of the beam. Such effective absorption may be by absorption of the beam by the PCB resin at the beam wavelength, or by absorption of the beam by an object (such as glass particles or fibers) contained in the resin, or by an object embedded in the PCB (eg, object 46). achieve. Alternatively, or in addition, in the case of the short pulse lasers mentioned above, the effective absorption of the beam can be achieved by a non-linear interaction of the short pulses with the PCB resin or the embedded object. In general, since micromachining works by ablating certain portions of the PCB, the efficiency of micromachining increases as the effective absorption of the beam increases.

諸多其他因素可影響裝置20在PCB 24中高效地進行微加工之能力:.所要微加工之PCB部分在該光束波長下需要具有之有效吸收性可限制在該光束波長下對表面36下面之物體(例如物體46)之有效成像。A number of other factors can affect the ability of device 20 to efficiently perform micromachining in PCB 24: The effective absorption of the portion of the PCB to be micromachined at the beam wavelength limits the effective imaging of objects below surface 36 (e.g., object 46) at the wavelength of the beam.

.裝置20之某些光學元件同時傳遞來自光源22之光束輻射與來自源50之成像輻射。另外,若產生螢光輻射,則該等光學元件亦可傳遞螢光輻射。該三種輻射具有不同之波長,且某些波長可彼此迥異。在此等情形中,可較佳將裝置20之光學元件選擇成包含反射元件、折射元件、或該二類型元件之組合、及/或例如衍射元件等其他元件,藉以正確地傳送不同之波長。元件選擇對於此項技術之一般技術人員將一目了然。. Certain optical components of device 20 simultaneously transmit beam radiation from source 22 and imaging radiation from source 50. In addition, if fluorescent radiation is generated, the optical elements can also transmit fluorescent radiation. The three types of radiation have different wavelengths, and some of the wavelengths can be different from each other. In such cases, the optical elements of device 20 may preferably be selected to include reflective elements, refractive elements, or combinations of the two types of elements, and/or other elements such as diffractive elements, to properly transmit different wavelengths. Component selection will be apparent to those of ordinary skill in the art.

.對可為光束選用之波長、以及對可為成像輻射及螢光輻射(若使用)選用之波長或波長範圍存在實際限值。. There are practical limits on the wavelengths that can be selected for the beam, and the wavelength or range of wavelengths that can be selected for imaging radiation and fluorescent radiation (if used).

對光束及成像輻射波長之選取因該等及其他因素(包括PCB 24之組成要素及物體46之光學特性)而異。因此,在本發明之某些實施例中,將光束波長與成像輻射波長選擇成大致相同。對於該等實施例,使成像輻射波長與光束波長相隔約50奈米或以下。在其他實施例中,則將該二波長選擇成互不相同,使成像輻射波長與光束波長相隔約100奈米或以上。對於螢光成像之情形,將成像輻射波長選擇成能產生螢光,且PCB樹脂對成像輻射固有地存在局部吸收性。The choice of beam and imaging radiation wavelengths will vary depending on these and other factors, including the components of the PCB 24 and the optical properties of the object 46. Thus, in certain embodiments of the invention, the beam wavelength is selected to be substantially the same as the imaging radiation wavelength. For these embodiments, the imaging radiation wavelength is separated from the beam wavelength by about 50 nanometers or less. In other embodiments, the two wavelengths are selected to be different from one another such that the imaging radiation wavelength is about 100 nanometers or more from the beam wavelength. For the case of fluorescent imaging, the wavelength of the imaging radiation is chosen to produce fluorescence, and the PCB resin inherently has local absorption for the imaging radiation.

裝置20可用於在PCB 24中微加工多個孔,該等孔通常用於微通路及/或盲通路。在微加工多個孔時所涉及到之步驟係:使光束26與區42對準,穿過該區微加工出孔,並使光束重新對準具有所要微加工之區之新部位。反覆地重複該過程。為使該過程有效率地進行,應盡可能快地執行光束之對準與重新對準。或者另外另一選擇為,可配置多組裝置20來實質上同時地微加工多個孔。在本發明之一實施例中,18組裝置20被同時操作在PCB上。Device 20 can be used to micromachine a plurality of holes in PCB 24, which are typically used for microvias and/or blind vias. The steps involved in micromachining a plurality of holes are to align beam 26 with region 42, through which the holes are micromachined and the beam realigned to a new portion of the region having the desired micromachining. Repeat the process over and over again. In order for this process to proceed efficiently, the alignment and realignment of the beam should be performed as quickly as possible. Or alternatively, multiple sets of devices 20 can be configured to micromachine a plurality of holes substantially simultaneously. In one embodiment of the invention, 18 sets of devices 20 are simultaneously operated on a PCB.

在本發明之某些實施例中,裝置20包含一元件51。元件51之功能將在下文中,參照第8圖加以說明。In some embodiments of the invention, device 20 includes an element 51. The function of the element 51 will be described below with reference to Fig. 8.

第2圖係為在不同波長下且樹脂厚度為45微米時,不同類型ABF樹脂之百分比透射之示意性曲線圖。Figure 2 is a schematic plot of the percent transmission of different types of ABF resins at different wavelengths and with a resin thickness of 45 microns.

藉由檢查該曲線圖會發現,在大約350奈米波長下對應於雷射器22所提供之波長,此時雷射器係為一UV雷射器,SH9K ABF樹脂透射大約20%,而GX3 ABF樹脂則具有高之吸收性。因此,若層38係SH9K ABF樹脂,則源50可與雷射器22具有大致相同之波長,並自物體46產生返回輻射。若層38包含GX3 ABF樹脂’則為獲得與在SH9K情況下相同或更多之返回輻射,源波長應大約為430奈米或以上。除第2圖之曲線圖所給出之透射因素以外,其他會影響PCB及物體46之成像之因素包括照明輻射之漫射,其因用於填充構成層38及40之環氧樹脂之玻璃珠之大小及密度而異。By examining the graph, it is found that at a wavelength of about 350 nm corresponding to the wavelength provided by the laser 22, the laser is now a UV laser, and the SH9K ABF resin is transmitted by about 20%, while the GX3 ABF resin has high absorbency. Thus, if layer 38 is a SH9K ABF resin, source 50 can have substantially the same wavelength as laser 22 and produce return radiation from object 46. If layer 38 comprises GX3 ABF resin', to obtain the same or more return radiation as in the case of SH9K, the source wavelength should be approximately 430 nm or more. In addition to the transmission factors given in the graph of Figure 2, other factors that affect the imaging of the PCB and object 46 include the diffusion of illumination radiation due to the glass beads used to fill the epoxy of the layers 38 and 40. The size and density vary.

本發明之發明者已發現,在800奈米左右或以上之近紅外線波長下,該二類型之樹脂皆實質透明。本發明之發明者還已發現,若源50以該等波長工作,則無論嵌於層38及40中之珠所引起之漫射如何,皆會形成所嵌入物體(例如物體46)之良好影像。The inventors of the present invention have found that both types of resins are substantially transparent at near infrared wavelengths of about 800 nm or more. The inventors of the present invention have also discovered that if the source 50 operates at the same wavelength, a good image of the embedded object (e.g., object 46) will be formed regardless of the diffusion caused by the beads embedded in layers 38 and 40. .

第3圖係為不同樹脂類型之螢光之示意性曲線圖。對應於ABF樹脂GX3、SH9K及GX13以及FR4材料之曲線繪示各該樹脂材料之正規化螢光強度-螢光波長之關係。該等曲線係在激發波長約為300奈米時產生,但發明者已證實,在其他激發波長(包括上文所例示之UV雷射器之350奈米之波長)下,亦會得到大致類似之曲線。本發明之某些實施例使用第3圖中之曲線所示之螢光特性來操作裝置20。例如,若層40(第1圖)包含FR4樹脂,且層38包含GX3樹脂,則可使用以約450奈米波長之工作帶通濾光片、或者截止波長大約為相同波長之長通濾光片來很好地區分該二層。在觀察該二層之螢光時,可使用一更短波之帶通或長通濾光片。Figure 3 is a schematic plot of fluorescence for different resin types. The curves corresponding to the ABF resins GX3, SH9K, GX13, and FR4 materials show the relationship between the normalized fluorescence intensity and the fluorescence wavelength of each of the resin materials. These curves are produced at an excitation wavelength of approximately 300 nm, but the inventors have demonstrated that at other excitation wavelengths (including the 350 nm wavelength of the UV lasers exemplified above), The curve. Certain embodiments of the present invention operate the device 20 using the fluorescent characteristics shown by the curves in FIG. For example, if layer 40 (Fig. 1) contains FR4 resin and layer 38 comprises GX3 resin, a working band pass filter having a wavelength of about 450 nm or a long pass filter having a cutoff wavelength of about the same wavelength can be used. The film is a good part of the second layer. When observing the fluorescent light of the second layer, a shorter wavelength band pass or long pass filter can be used.

第4圖係為一流程圖60,其顯示根據本發明一實施例在操作裝置20時所執行之步驟。4 is a flow chart 60 showing the steps performed when operating device 20 in accordance with an embodiment of the present invention.

在使用裝置20進行微加工之前,首先將該裝置相對於PCB 24作校準。該初始校準可以係標記一面板,例如一專用校準面板(不同於PCB 24),使用裝置20對該等標記成像,並根據所成像之標記來確定裝置之校準偏移量。在某些實施例中,可標記PCB 24之一部分,並使用該等標記進行校準。Prior to micromachining using device 20, the device is first calibrated relative to PCB 24. The initial calibration may be to mark a panel, such as a dedicated calibration panel (other than PCB 24), to image the markers using device 20, and to determine the calibration offset of the device based on the imaged markers. In some embodiments, a portion of the PCB 24 can be marked and calibrated using the markers.

另一選擇為,或者另外,如在下文中所更詳細說明,可有利地使用第3圖中之曲線所示之螢光特性使裝置20對正。下文對流程圖60中各步驟之說明係描述一種校準過程及一種微加工製程。Alternatively, or in addition, as will be explained in more detail below, the device 20 can be aligned using the fluorescent characteristics shown by the curves in FIG. The following description of the various steps in flowchart 60 describes a calibration process and a micromachining process.

在一第一校準步驟62中,操作員23將一專用校準面板或PCB 24(若要使用該PCB進行校準)定位於平臺45上。操作員為裝置20提供校準目標座標(通常係2至4個校準目標之座標)以及在校準面板中或在PCB 24中對應於該等目標之形狀。操作員可自電腦輔助製造(CAM)檔案中提供目標座標及形狀,或者可由操作員直接輸入。如上文所述,該等目標可配置成無損性的或有損性的。另一選擇為,校準面板或PCB 24可藉由機械方式進行定位,通常係使用基準銷、拐角、或者面板或PCB中之其他機械基準區。In a first calibration step 62, the operator 23 positions a dedicated calibration panel or PCB 24 (to be calibrated using the PCB) on the platform 45. The operator provides the device 20 with calibration target coordinates (typically coordinates of 2 to 4 calibration targets) and shapes corresponding to the targets in the calibration panel or in the PCB 24. The operator can provide the target coordinates and shape from a computer-aided manufacturing (CAM) file or can be entered directly by the operator. As noted above, such targets can be configured to be non-destructive or lossy. Alternatively, the calibration panel or PCB 24 can be mechanically positioned, typically using a reference pin, a corner, or other mechanical reference zone in the panel or PCB.

在一第二校準步驟64中,操作員操作裝置20之對正系統,以對校準目標進行照明及定位。照明可來自源50,如上文所述,可較佳選擇源50之成像輻射波長,以使返回輻射為螢光輻射。還如上文所述,PU 32可調整源50之波長及/或功率,以使所產生之影像最佳。In a second calibration step 64, the operator operates the alignment system of device 20 to illuminate and position the calibration target. Illumination can be from source 50, and as described above, the wavelength of the imaging radiation of source 50 can be preferably selected such that the return radiation is fluorescent radiation. As also described above, the PU 32 can adjust the wavelength and/or power of the source 50 to optimize the resulting image.

另一選擇為,或者另外,若使用校準目標之螢光,則可藉由以低於PCB之燒蝕臨限值功率之功率操作雷射器22,來照明包含該等目標之區。在此種情形中,可通常藉由以光學元件串30使光束26散焦、以「區域照明」模式操作雷射器22來照明該區。另一選擇為,可藉由使用光束操控平臺35掃描鏡34,並由此掃描雷射光束來執行區域照明模式。校準目標在感測器56上成像,且PU 32使用在感測器上所形成之目標影像來校準裝置20。若使用螢光,則PU 32及/或操作員23可選擇濾光片組53中之一濾光片來使所形成之影像最佳化-通常在層38及40包含例如上文所述之不同樹脂之情況下,且如在對第3圖之說明中所例示。Alternatively, or in addition, if fluorescence of the calibration target is used, the region containing the targets can be illuminated by operating the laser 22 at a power below the ablation threshold power of the PCB. In such a case, the region can be illuminated typically by defocusing the beam 26 with the optical element string 30 and operating the laser 22 in a "area illumination" mode. Alternatively, the area illumination mode can be performed by scanning the mirror 34 using the beam steering platform 35 and thereby scanning the laser beam. The calibration target is imaged on sensor 56 and PU 32 calibrates device 20 using the target image formed on the sensor. If fluorescence is used, the PU 32 and/or the operator 23 may select one of the filters 53 to optimize the formed image - typically including layers 38 and 40, for example, as described above. In the case of different resins, and as illustrated in the description of Figure 3.

下面之步驟假定已使用PCB 24進行校準,且該PCB在裝置20中就位。在下面之步驟中,以舉例方式,假定物體46為一孤立之近似圓形之焊墊,且要穿過焊墊之中心並垂直於表面36微加工一孔。此項技術之一般技術者將能夠針對其他類型之物體46(例如連接至矩形導體或連接至一相連之圓形焊墊陣列之圓形焊墊)在細節上對該流程圖中各步驟之說明作必要修正。The following steps assume that the PCB 24 has been calibrated and that the PCB is in place in the device 20. In the following steps, by way of example, object 46 is assumed to be an isolated, approximately circular pad, and a hole is micromachined perpendicular to surface 36 through the center of the pad. One of ordinary skill in the art will be able to detail the steps in the flow chart for other types of objects 46 (e.g., a circular pad attached to a rectangular conductor or to a connected array of circular pads). Make the necessary corrections.

在一第一微加工步驟65中,操作員23將對應於在PCB 24中所構建電路之CAM檔案裝載入記憶體25內。In a first micromachining step 65, the operator 23 loads the CAM files corresponding to the circuits built in the PCB 24 into the memory 25.

在一第二微加工步驟66中,PU 32使用CAM檔案來確定形狀及該形狀之名義座標,其中要微加工一孔。在下文說明中,假定要在物體46之中心上微加工一孔,因而該等名義座標可為物體46或包含該物體之部位43之名義座標。另一選擇為,可藉由分析電路之影像來得到物體46之名義座標及形狀,該分析係由操作員23及/或PU 32執行。In a second micromachining step 66, the PU 32 uses the CAM archive to determine the shape and the nominal coordinates of the shape in which a hole is to be micromachined. In the following description, it is assumed that a hole is to be micromachined at the center of the object 46, and thus the nominal coordinates may be the nominal coordinates of the object 46 or the portion 43 containing the object. Alternatively, the nominal coordinates and shape of the object 46 can be obtained by analyzing the image of the circuit, which is performed by the operator 23 and/or the PU 32.

在一第三微加工步驟68中,PU 32使用對應於名義座標之一信號來向固定PCB 24、光學元件串30、及/或鏡34之各運動平臺提供粗略調整控制信號,以使物體46移入感測器56之視野內。此種定位可由處理單元完全自動地執行。或者,操作員23通常可藉由將名義座標提供至PU 32,至少部分地執行此種定位,。In a third micromachining step 68, the PU 32 provides a coarse adjustment control signal to each of the fixed PCB 24, optical element string 30, and/or mirror 34 motion stages using signals corresponding to one of the nominal coordinates to cause the object 46 to move in. Within the field of view of sensor 56. This positioning can be performed completely automatically by the processing unit. Alternatively, operator 23 can generally perform such positioning at least in part by providing nominal coordinates to PU 32.

自步驟68開始,PU 32遵循二可能路徑之一。第一路徑69係經由光束對正步驟70及72到達物體照明步驟74。第二路徑71則直接到達物體照明步驟74。當首先操作流程圖60並隨後定期地操作流程圖60時,PU 32遵循第一路徑69,因而在步驟70及72中所執行之光束對正並非對所微加工之每一物體皆執行。而是,間歇性地每t秒執行一次光束對正,其中t係由操作員23選取之參數,且通常約為10左右。Beginning at step 68, PU 32 follows one of the two possible paths. The first path 69 reaches the object illumination step 74 via beam alignment steps 70 and 72. The second path 71 then directly reaches the object illumination step 74. When the flowchart 60 is first operated and then the flowchart 60 is periodically operated, the PU 32 follows the first path 69, and thus the beam alignment performed in steps 70 and 72 is not performed for each object being micromachined. Rather, beam alignment is performed intermittently every t seconds, where t is the parameter selected by operator 23 and is typically about 10.

在路徑69中,在第一光束對正步驟70中,以低於燒蝕臨限值之低功率操作雷射器22,並射到部位43上。雷射光束通常在其射到部位43上之處(此處假定為區42)激發螢光,在此種情形中,返回螢光輻射聚焦於感測器56上而在感測器上形成區42之影像。另一選擇為,可並非使用PCB之螢光,而是之前已在部位43上附加一燒蝕校準板。In path 69, in the first beam alignment step 70, the laser 22 is operated at a low power below the ablation threshold and onto the site 43. The laser beam typically excites the phosphor at its location on the site 43 (here assumed to be region 42), in which case the return fluorescent radiation is focused on the sensor 56 to form a region on the sensor. Image of 42. Alternatively, instead of using the fluorescent light of the PCB, an ablation calibration plate has been previously attached to the portion 43.

在路徑69中,在第二光束對正步驟72中,PU 32記錄雷射光束在感測器56上之定位。In path 69, in a second beam alignment step 72, PU 32 records the position of the laser beam on sensor 56.

在物體照明步驟74中,PU 32關閉雷射器22,並操作源50對物體46進行照明。另一選擇為,或者另外,在步驟74中,PU 32可使雷射器22保持低功率及/或上文所述之區域照明模式。通常,PU 32使用在物體46附近自PCB產生之返回螢光輻射來形成在下一步驟76中所述之影像。螢光輻射可由雷射器22及/或源50之輻射產生。該影像可由返回螢光輻射單獨形成、或者與處於源50之波長之返回輻射一同形成。通常,例如對於上文所述之包含不同樹脂類型(例如ABF及FR4)之層38及40之實例而言,在為返回螢光輻射之情形中,PU 32自濾光片組53中選擇一濾光片來使影像最佳化。In the object illumination step 74, the PU 32 turns off the laser 22 and operates the source 50 to illuminate the object 46. Alternatively, or in addition, in step 74, the PU 32 may maintain the laser 22 at a low power and/or the area illumination mode described above. Typically, PU 32 uses the return fluorescent radiation generated from the PCB near object 46 to form the image described in the next step 76. Fluorescent radiation can be generated by radiation from the laser 22 and/or source 50. The image may be formed by returning fluorescent radiation alone or with return radiation at a wavelength of source 50. Typically, for example, for the examples of layers 38 and 40 comprising different resin types (e.g., ABF and FR4) as described above, PU 32 is selected from the filter set 53 in the case of returning fluorescent radiation. Filters to optimize the image.

在物體記錄步驟76中,PU 32記錄在感測器56中產生之物體影像。PU 32分析來自感測器56之信號電平,以確定對應於中心實際座標之信號。此種分析之一實例將參照第5B及5C圖加以說明。若已遵循路徑69,則處理單元記錄並確定圓形焊墊中心之實際座標與在步驟72中得到之光束位置間之偏移量。而若已遵循路徑71,則處理單元使用在路徑69之最新執行中所得到之偏移量。In object recording step 76, PU 32 records the image of the object produced in sensor 56. The PU 32 analyzes the signal level from the sensor 56 to determine the signal corresponding to the actual center coordinates. An example of such an analysis will be described with reference to Figures 5B and 5C. If path 69 has been followed, the processing unit records and determines the offset between the actual coordinates of the center of the circular pad and the position of the beam obtained in step 72. If the path 71 has been followed, then the processing unit uses the offset obtained in the most recent execution of path 69.

在運動步驟78中,PU 32使用在步驟76中所確定之偏移量、相對於物體46之中心來調整光束位置。通常,藉由操作光束操控平臺35以正確對準鏡34來完成該調整。In motion step 78, PU 32 adjusts the beam position relative to the center of object 46 using the offset determined in step 76. Typically, this adjustment is accomplished by operating the beam steering platform 35 to properly align the mirror 34.

在操作雷射器步驟80中,PU 32將源22之功率切換成高於燒蝕臨限值,以使光束燒蝕層38及物體46,並由此在物體46之中心之實際座標處微加工出一孔。在某些實施例中,在微加工期間,處理單元還可隨著微加工之進行,使用光學元件串30改變光束26之焦點。In operating the laser step 80, the PU 32 switches the power of the source 22 above the ablation threshold to cause the beam to ablate the layer 38 and the object 46, and thereby at the actual coordinates of the center of the object 46. Make a hole. In some embodiments, during micromachining, the processing unit may also use the optical element string 30 to change the focus of the beam 26 as the micromachining proceeds.

在第一判決步驟82中,PU 32檢查是否要在PCB 24上對該PCB之其他部位執行之進一步微加工操作。若不存在其他操作,則流程圖60結束。若存在其他操作-在此處假定係要在實質類似於物體46之物體之中心處加工孔,則流程圖60繼續進行至第二判決步驟84。In a first decision step 82, the PU 32 checks if further micromachining operations are to be performed on the PCB 24 for other portions of the PCB. If no other operations exist, flowchart 60 ends. If there are other operations - where it is assumed that the hole is to be machined at the center of the object substantially similar to object 46, then flow chart 60 proceeds to a second decision step 84.

在第二判決步驟84中,PU 32判定物體46距所要加工之下一物體之名義位置之距離是否大於一預設距離(通常為10毫米左右)。若該距離大於預設距離,則將計數器N設定為0,且該流程返回步驟66來加工下一物體。In a second decision step 84, the PU 32 determines if the distance of the object 46 from the nominal position of an object to be processed is greater than a predetermined distance (typically about 10 mm). If the distance is greater than the preset distance, the counter N is set to 0, and the flow returns to step 66 to process the next object.

若該距離小於或等於預設距離,則在第三判決步驟86中,PU 32檢查在步驟76中所記錄之偏移量是否小於一預設值。若該偏移量小於預設值,則在步驟88中,PU 32藉由對下面的N個物體執行步驟78及80來操作裝置20,其中N係上面所提及之計數器,且其中N設定為通常約為10之一預定值。操作員23可在步驟65中裝載CAM檔案時設定該預定值N。If the distance is less than or equal to the preset distance, then in a third decision step 86, the PU 32 checks if the offset recorded in step 76 is less than a predetermined value. If the offset is less than the preset value, then in step 88, the PU 32 operates the device 20 by performing steps 78 and 80 on the following N objects, where N is the counter mentioned above, and wherein N is set It is usually a predetermined value of about one of ten. The operator 23 can set the predetermined value N when loading the CAM file in step 65.

在執行步驟88之同時,PU 32在每一加工操作後皆檢查各物體間之距離是否超過預設距離,在此種情形中,該流程返回步驟66,如流程圖中之虛線67所示。若在加工該N個物體時不超過該預設距離,則PU 32完成對該N個物體之加工,使N遞增,並隨後使流程返回步驟66。While performing step 88, the PU 32 checks whether the distance between the objects exceeds the preset distance after each processing operation. In this case, the flow returns to step 66, as indicated by the dashed line 67 in the flowchart. If the predetermined distance is not exceeded when the N objects are processed, the PU 32 completes processing the N objects, increments N, and then returns the flow to step 66.

若在判決步驟86中該偏移量大於或等於預設值,則PU 32使N遞減至最小值0。在步驟90中,PU 32藉由對下面之N(遞減後之值)個物體執行步驟78及80來操作該裝置。在執行步驟90之同時,PU 32在每一加工操作後,皆檢查各物體間之距離是否超過預設距離,在此種情形中,該流程返回步驟66,如流程圖中之虛線73所示。若在加工該N個物體時不超過該預設距離,則PU 32完成對該N個物體之加工,並隨後使流程返回步驟66。If the offset is greater than or equal to the preset value in decision step 86, PU 32 decrements N to a minimum value of zero. In step 90, PU 32 operates the device by performing steps 78 and 80 on the following N (decreasing values) objects. While performing step 90, the PU 32 checks whether the distance between the objects exceeds the preset distance after each processing operation. In this case, the flow returns to step 66, as indicated by the dashed line 73 in the flowchart. . If the predetermined distance is not exceeded when the N objects are processed, the PU 32 completes processing of the N objects and then returns the flow to step 66.

判決步驟84使操作員23能夠將裝置20配置成可在不執行對正步驟之情況下,加工處於一已被執行對正步驟66-76之物體之預設距離以內之各物體。換言之,使用針對一給定物體確定出之偏移量為靠近該給定物體之物體群組確定光束位置。Decision step 84 enables operator 23 to configure device 20 to process objects within a predetermined distance of an object that has been subjected to alignment steps 66-76 without performing a alignment step. In other words, the beam position is determined using a set of objects determined for a given object to be a group of objects that are close to the given object.

判決步驟86使操作員能夠將裝置配置成使在步驟76中得到之偏移量之大小決定在上面所述之群組中有多少物體。因此,若所確定之偏移量低於預設偏移量,則對所要加工之下一物體群組遞增N之值(群組中之物體數量)。而若所確定之偏移量大於預設偏移量,則對所要加工之下一物體群組遞減N之值。Decision step 86 enables the operator to configure the device such that the magnitude of the offset obtained in step 76 determines how many objects are in the group described above. Therefore, if the determined offset is lower than the preset offset, the value of N (the number of objects in the group) is incremented for a group of objects to be processed. And if the determined offset is greater than the preset offset, the value of N is decremented for a group of objects to be processed.

操作員通常在步驟65中輸入預設距離及預設偏移量之值。The operator typically enters a preset distance and a preset offset value in step 65.

以上說明適用於穿過圓形焊墊之中心垂直於表面36微加工一圓形孔。裝置20亦可執行其他微加工操作,例如非垂直地微加工一孔,及/或微加工一非圓形孔,例如呈狹縫形狀之孔,及/或在不同於與流程圖60中所確定實際座標相對應之位置處微加工一孔。亦應瞭解,可採用微加工來形成完全穿透PCB之孔,或者並不完全穿透PCB之孔。此項技術之一般技術者將能夠針對此等其他微加工操作來修改以上說明,通常係藉由使處理單元在步驟78及80中對平移平臺33、平移平臺45、及/或光束操控平臺35執行進一步之操作來實現。The above description applies to micromachining a circular hole perpendicular to the surface 36 through the center of the circular pad. Device 20 can also perform other micromachining operations, such as non-perpendicular micromachining of a hole, and/or micromachining of a non-circular hole, such as a slit-shaped hole, and/or different from flow chart 60. Make sure that the hole is micromachined at the position corresponding to the actual coordinate. It should also be appreciated that micromachining may be used to form a hole that completely penetrates the PCB or does not completely penetrate the hole of the PCB. Those of ordinary skill in the art will be able to modify the above description for such other micromachining operations, typically by having the processing unit align the translation platform 33, translation platform 45, and/or beam steering platform 35 in steps 78 and 80. Perform further operations to achieve.

通常,對應於步驟68之粗略對準若自動執行,則自前一微加工之孔起耗用大約1-3毫秒。若光束操控平臺35(第1圖)係基於檢流計,則通常適用較短之時間,而若該平臺係二軸式掃描系統,則通常適用較長之時間。較佳地,上文在步驟78中所述之精微對準程序耗用不到大約1毫秒。之所以能實現該等時間,主要係因為射向所微加工之每一部位之成像輻射具有高之強度。Typically, if the coarse alignment corresponding to step 68 is performed automatically, it takes approximately 1-3 milliseconds since the previous micromachined hole. If the beam steering platform 35 (Fig. 1) is based on a galvanometer, it is usually applied for a shorter period of time, and if the platform is a two-axis scanning system, it is usually applied for a longer period of time. Preferably, the fine alignment procedure described above in step 78 takes less than about 1 millisecond. The reason for achieving this time is mainly because the imaging radiation directed at each part of the micromachining has a high intensity.

發明者已發現,該等時間與並不採用流程60中之步驟進行此種加工之先前技術系統相比,在採用流程60來加工PCB時,實質上不存在時間損失。此外,可在加工PCB期間執行例如判決步驟84及86等步驟。因此,可將流程60實施成實質即時地操作。藉由以所述時間進行操作,便可消除例如熱漂移等相對長期之不利效應。而且,藉由如上文所述僅間歇性地執行對正步驟70及72,會縮短總操作時間,而不會影響微加工之精度。The inventors have discovered that there is substantially no time loss when using process 60 to process a PCB compared to prior art systems that do not employ such steps in process 60. Additionally, steps such as decision steps 84 and 86 can be performed during processing of the PCB. Thus, process 60 can be implemented to operate substantially in real time. By operating at the stated time, relatively long-term adverse effects such as thermal drift can be eliminated. Moreover, by performing the alignment steps 70 and 72 only intermittently as described above, the total operation time is shortened without affecting the precision of the micromachining.

第5A圖顯示根據本發明一實施例,可用於裝置20中之光學感測器56之一表面之示意圖。通常,為在上面給出之對準時間中產生對準信號,感測器56使用互補金屬氧化物半導體(CMOS)技術。另一選擇為,感測器56可包含一個或多個CCD(電荷耦合器件)、或其他適當之感測器件。FIG. 5A shows a schematic diagram of one surface of an optical sensor 56 that can be used in device 20, in accordance with an embodiment of the present invention. Typically, to generate an alignment signal in the alignment time given above, the sensor 56 uses complementary metal oxide semiconductor (CMOS) technology. Alternatively, sensor 56 can include one or more CCDs (charge coupled devices), or other suitable sensing devices.

一圖式164圖解說明感測器56之表面。感測器56通常包含一矩形之偵測元件陣列170。下面說明適合之影像感測器之某些實例。位於Boise,Idaho之Micron Technology公司提供一種MTM001 CMOS 130萬像素之矩形陣列感測器,本發明之發明者發現此種感測器即適合。可使用一可程式化之關注區域(AOI)來限制感測器中所定址之元件數量,藉以使該陣列能夠用於1-3毫秒左右之短之採集時間。日本之Hamamatsu Photonics K.K.公司提供一種256×256偵測元件S9132陣列,其可作為兩個一維陣列使用,並給出總和輸出,此將在下文中予以更詳細說明。此項技術之一般技術者將熟悉適合用作感測器56之其他陣列。A diagram 164 illustrates the surface of the sensor 56. The sensor 56 typically includes a rectangular array of detection elements 170. Some examples of suitable image sensors are described below. Micron Technology, Inc. of Boise, Idaho, provides an MTM001 CMOS 1.3 megapixel rectangular array sensor, and the inventors of the present invention have found that such a sensor is suitable. A programmable area of interest (AOI) can be used to limit the number of components addressed in the sensor, thereby enabling the array to be used for short acquisition times of around 1-3 milliseconds. Hamamatsu Photonics K.K. of Japan provides an array of 256 x 256 sensing elements S9132 that can be used as two one-dimensional arrays and gives a sum output, as will be explained in more detail below. Those of ordinary skill in the art will be familiar with other arrays suitable for use as sensor 56.

PU 32可有利地使用來自元件170之信號,以精確地確定關於物體46之特定位置。第5B及5C圖顯示物體46之影像之實例。舉例而言,假定物體46包含一圓形焊墊,且要微加工該圓形焊墊之中心。在第5B圖中,物體46包含一孤立之近似圓形之焊墊,其產生影像166。在第5C圖中,物體46包含連接至矩形導體之一近似圓形之焊墊,其產生由一圓形部分178連接至一矩形部分180而構成之影像176。The PU 32 can advantageously use signals from the component 170 to accurately determine a particular location with respect to the object 46. Figures 5B and 5C show examples of images of object 46. For example, assume that object 46 includes a circular pad and that the center of the circular pad is to be micromachined. In Figure 5B, object 46 includes an isolated, approximately circular pad that produces image 166. In Figure 5C, object 46 includes an approximately circular pad attached to one of the rectangular conductors that produces an image 176 formed by a circular portion 178 coupled to a rectangular portion 180.

若感測器56包含由各單獨像素形成之矩形陣列(例如上面提及之Micron陣列),則對於影像166,PU 32可將所要分析之像素數量減少至環繞影像166之一矩形像素集合168,減少像素數量會縮短對影像之採集時間。PU 32可然後將所有成像像素擬合至一個圓一通常係使用邊緣偵測演算法來進行,以便以子像素精度識別影像166之中心。If the sensor 56 includes a rectangular array of individual pixels (such as the Micron array mentioned above), for the image 166, the PU 32 can reduce the number of pixels to be analyzed to one of the rectangular pixels 168 of the surrounding image 166. Reducing the number of pixels reduces the time it takes to capture images. The PU 32 can then fit all of the imaging pixels to a circle, typically using an edge detection algorithm to identify the center of the image 166 with sub-pixel precision.

例如,藉由使用130萬像素中之100×100個像素,與30赫茲之名義訊框速率相比,可將影像採集時間改善接近100倍,藉以提供亞毫秒之採集時間。如此短之採集時間需要具有高之影像照明強度,此係由來自源50之定向部位照明經由鏡34(第1圖)來提供。For example, by using 100×100 pixels out of 1.3 megapixels, the image acquisition time can be improved by nearly 100 times compared to the nominal frame rate of 30 Hz, thereby providing sub-millisecond acquisition time. Such a short acquisition time requires a high image illumination intensity, which is provided by the illumination of the directional portion from source 50 via mirror 34 (Fig. 1).

對於影像176,PU 32可將所要分析之像素數量減少至環繞部分178之一矩形像素集合179(可能去除矩形部分180中之某些像素)。藉助一種邊緣偵測演算法,PU 32可然後將形成一非線性邊緣之成像像素擬合至一個圓,以便以子像素精度識別圓形部分178之中心。另一選擇為,PU 32可使用邊緣偵測演算法將所有像素擬合至一預期之理論邊緣,該理論邊緣係由一個圓與位於該圓一側上之二平行線相交而產生的。For image 176, PU 32 may reduce the number of pixels to be analyzed to one of the rectangular pixel sets 179 of surrounding portion 178 (possibly removing some of the pixels in rectangular portion 180). With an edge detection algorithm, the PU 32 can then fit the imaging pixels that form a non-linear edge to a circle to identify the center of the circular portion 178 with sub-pixel precision. Alternatively, the PU 32 can fit all of the pixels to an expected theoretical edge using an edge detection algorithm that is created by a circle intersecting two parallel lines on one side of the circle.

通常,PU 32選擇進行分析之像素並不需要為簡單之矩形陣列。例如,成像部位可包含附連至一大圓形焊墊之小圓形焊墊,在此種情形中,PU 32所選之像素可配置成為剛好囊括該部位所選之通常不規則之像素集合。In general, the pixels that PU 32 selects for analysis do not need to be a simple rectangular array. For example, the imaging site can include a small circular pad attached to a large circular pad, in which case the pixel selected by the PU 32 can be configured to encompass the generally irregular set of pixels selected for that portion. .

感測器56可包含一可並不給出陣列中每一像素之輸出之陣列,例如上文所提及之Hamamatsu陣列。在此種情形中,PU 32可對該陣列之總和輸出應用曲線擬合,以找到影像166及178之中心。Sensor 56 can include an array that does not give an output for each pixel in the array, such as the Hamamatsu array mentioned above. In this case, PU 32 may apply a curve fit to the sum output of the array to find the centers of images 166 and 178.

第6圖係為根據本發明一替代實施例之一光束對準裝置320之示意圖。除下文所述之區別外,裝置320之操作大體類似於裝置20(第1圖)之操作,且裝置20與320中由相同參考編號所表示之元件在構造及操作方面大體類似。Figure 6 is a schematic illustration of a beam alignment device 320 in accordance with an alternate embodiment of the present invention. Except for the differences described below, the operation of device 320 is generally similar to the operation of device 20 (Fig. 1), and the elements represented by the same reference numerals in devices 20 and 320 are generally similar in construction and operation.

裝置320包含一分束鏡326,且去除了分束鏡52。分束鏡326用以透射來自源50之成像輻射,並將自部位43返回之輻射反射至感測器56。若返回輻射具有與源50之輻射相同之波長,則分束鏡可為一50/50分束鏡。若返回輻射係螢光輻射,則分束鏡326可配置成一二向色分束鏡。另一選擇為,如下文所述,分束鏡326可為一偏振分束鏡。Device 320 includes a beam splitter 326 with beam splitter 52 removed. Beam splitter mirror 326 is used to transmit imaging radiation from source 50 and to reflect radiation returning from portion 43 to sensor 56. If the return radiation has the same wavelength as the source 50, the beam splitter can be a 50/50 beam splitter. If the radiant radiation is returned, the beam splitter 326 can be configured as a dichroic beam splitter. Alternatively, as described below, the beam splitter 326 can be a polarizing beam splitter.

在裝置320中,光學元件串30分離成二組光學元件。第一組324通常包含可移動之光學元件,其可用於改變來自源22之光束之放大率。第二組322通常包含固定之光學元件。藉由將光學元件串30分成該二組,可在不影響照明以及分束鏡28與鏡34間之成像路徑之情況下調整來自源22之光束之放大率。In device 320, optical element string 30 is separated into two sets of optical elements. The first set 324 typically includes movable optical elements that can be used to vary the magnification of the beam from source 22. The second set 322 typically includes a fixed optical component. By dividing the optical element string 30 into the two groups, the magnification of the beam from the source 22 can be adjusted without affecting the illumination and the imaging path between the beam splitter 28 and the mirror 34.

下面將說明裝置320中之元件323及325。Elements 323 and 325 in device 320 will be described below.

若裝置320中所提供之法向成像照明在部位43上大體均勻,即若該照明幾乎不或根本不存在任何結構,則鏡面物體46所得到之影像通常係該物體之亮影像反襯一環繞該物體之區之暗背景影像,且該二影像具有良好之反差。If the normal imaging illumination provided in device 320 is substantially uniform over portion 43, i.e., if the illumination has little or no structure at all, the image obtained by specular object 46 is typically a contrast of the bright image of the object. A dark background image of the area of the object, and the two images have a good contrast.

考量裝置20與320之後便會發現,例如可操控之鏡34及光學元件串30等光學元件可傳遞至少二種不同之波長,即光束26之光束波長與源50之成像輻射波長。若使用螢光,則該等光學元件可傳遞三種不同之波長,即光束波長、成像輻射波長、以及螢光波長。將同一些元件配置成傳遞二或三種不同之波長會顯著減少若對不同波長分別使用單獨一組元件時可能需要之光學元件之數量。After considering the devices 20 and 320, it will be discovered that optical elements such as the steerable mirror 34 and the optical element string 30 can deliver at least two different wavelengths, namely the beam wavelength of the beam 26 and the imaging radiation wavelength of the source 50. If fluorescent light is used, the optical elements can deliver three different wavelengths, namely the beam wavelength, the imaging radiation wavelength, and the fluorescent wavelength. Configuring the same components to deliver two or three different wavelengths significantly reduces the number of optical components that may be required if a separate set of components are used for different wavelengths.

第7圖係為根據本發明又一替代實施例之光束對準裝置330之示意圖。除下文所述之區別外,裝置330之操作大體類似於裝置20(第1圖)及裝置320(第7圖)之操作,且裝置20、320與330中由相同參考編號所表示之元件在構造及操作方面大體類似。Figure 7 is a schematic illustration of a beam alignment device 330 in accordance with yet another alternative embodiment of the present invention. The operation of device 330 is generally similar to the operation of device 20 (Fig. 1) and device 320 (Fig. 7), except for the differences described below, and the components represented by the same reference numerals in devices 20, 320 and 330 are The construction and operation are generally similar.

裝置330在鏡34與部位43間包含一透鏡系統336。透鏡系統336通常包含一遠心透鏡,其使鏡34能夠具有約±20°之FOV。增加該透鏡系統便會將裝置330配置成一「預掃描」系統。與上文所述之後掃描系統相比,鏡之FOV愈大,便能使鏡將光束26投射至PCB 24中愈大之區域上並對該區域成像。Device 330 includes a lens system 336 between mirror 34 and portion 43. Lens system 336 typically includes a telecentric lens that enables mirror 34 to have an FOV of about ±20°. Adding the lens system will configure device 330 as a "pre-scan" system. The larger the FOV of the mirror, as compared to the scanning system described above, enables the mirror to project the beam 26 onto the larger area of the PCB 24 and image the area.

光學元件組324及322通常分別重新配置成包含可移動元件之第一組334以及包含固定元件之第二組332,組334與組332經過選擇以適應於透鏡系統336。The optical element sets 324 and 322 are typically reconfigured to include a first set 334 of movable elements and a second set 332 of fixed elements, respectively, the sets 334 and 332 being selected to accommodate the lens system 336.

上文對裝置20、320及330之說明係假定成像照明大體垂直於表面36,且總體上未結構化。而在下文所述之本發明之某些實施例中,亦可將成像照明配置成使該照明具有結構,如下文所述。The above description of devices 20, 320, and 330 assumes that the imaging illumination is generally perpendicular to surface 36 and is generally unstructured. In some embodiments of the invention described below, the imaging illumination can also be configured to have the illumination structured as described below.

第8圖圖解說明根據本發明一實施例由源50提供之成像輻射配置344。圖中顯示在輻射配置344情況下,PCB 24之剖面圖340及俯視圖342。在配置344中,表面36上之成像輻射被結構化成例如一大體圓環346形狀之成像輻射。該成像輻射穿透層38及40,且還因該等層內之漫射而在該等層內局部散射,例如主要因包含於該等層中之填充材料而引起。穿透與局部散射相結合會有效地「自背面照明」物體46,如由箭頭348所示意性地顯示,由此在感測器56上形成一高反差影像。無論物體46是否係鏡面,皆會產生高反差影像。此外,藉由背面照明所形成之高反差影像會有效地補償可能因在該等層內之輻射漫射而造成之影像模糊。而假如不使用背面照明效果,影像模糊可在影像之所測量位置上造成偏差。Figure 8 illustrates an imaging radiation configuration 344 provided by source 50 in accordance with an embodiment of the present invention. The figure shows a cross-sectional view 340 and a top view 342 of the PCB 24 in the case of a radiation configuration 344. In configuration 344, the imaging radiation on surface 36 is structured into imaging radiation, for example, in the shape of a generally circular ring 346. The imaging radiation penetrates layers 38 and 40 and is also locally scattered within the layers due to diffusion within the layers, such as primarily due to the filler material contained in the layers. The combination of penetration and local scattering effectively "self-backlit" the object 46, as indicated by arrow 348, thereby forming a high contrast image on the sensor 56. Regardless of whether the object 46 is mirrored, a high contrast image is produced. In addition, high contrast images formed by backlighting can effectively compensate for image blurring that may be caused by radiation diffusion within the layers. If the backlight is not used, the image blur can cause deviations in the measured position of the image.

可藉由將一元件51(第1圖)(通常為止擋件)置於透鏡49與分束鏡52間,以在裝置20中有利地提供輻射配置344。儘管為清楚起見在圖中未顯示,然而亦可藉由將一適當之止擋件置於透鏡55與分束鏡28間,以在裝置320中提供配置344。其他用於在裝置20、320及330中形成圓環狀輻射之方法(例如使用為得到結構化照明而設計之衍射元件),對於此項技術之一般技術者而言將一目了然,且認為亦包含於本發明之範疇內。例如,元件51可包含此一衍射元件。源50可提供其他形式之結構化照明,該照明通常係根據所成像之部位來結構化。例如,可使用一矩形之照明來照明一大致直線狀迹線周圍之區域。所有此等形式之結構化照明皆被認為仍包含於本發明之範疇內。A radiation arrangement 344 can advantageously be provided in device 20 by placing an element 51 (Fig. 1) (typically a stop) between lens 49 and beam splitter 52. Although not shown in the figures for clarity, a configuration 344 can also be provided in device 320 by placing a suitable stop between lens 55 and beam splitter 28. Other methods for forming annular radiation in devices 20, 320, and 330 (e.g., using diffractive elements designed to achieve structured illumination) will be apparent to those of ordinary skill in the art and are believed to include Within the scope of the invention. For example, element 51 can comprise such a diffractive element. Source 50 can provide other forms of structured illumination that are typically structured according to the location being imaged. For example, a rectangular illumination can be used to illuminate an area around a generally linear trace. All such forms of structured illumination are considered to be still within the scope of the present invention.

為得到配置344,可將源50選擇成一具有極短相干長度之雷射發射器,以便實質不存在斑點。發明者已發現,相干長度約為所加工物體尺寸(例如圓形焊墊之直徑)之1-2倍之雷射器便適合於此。To obtain configuration 344, source 50 can be selected as a laser emitter having a very short coherence length so that there are substantially no spots. The inventors have found that a laser having a coherence length of about 1-2 times the size of the object being processed (e.g., the diameter of a circular pad) is suitable for this.

重新參見第6圖,一替代輻射配置使用偏振照明輻射。如在第6圖中所示,可將一偏振器323置於源50之後,並將一分析儀325置於感測器56之前。另一選擇為,由於源50通常提供偏振輻射,因而可無需使用偏振器323。偏振器323之定向、或源50(若其輻射係偏振的)之定向、以及分析儀325之定向可由PU 32加以控制。另一選擇為,該等定向可由操作員23預設成大體固定之值。表面36及PCB 24之中間表面(例如層38與層40間之介面)之反射實際上與低入射角之入射偏振輻射具有相同之偏振。來自層38及40之返回散射輻射相對較弱,且主要在與入射偏振輻射相同之方向上偏振。然而,若物體46具有甚至一局部粗糙之金屬表面(為改善物體與其嵌入樹脂間之黏著性,通常會如此),其所反射之輻射實質上被消偏振,因而具有與入射偏振輻射呈90°夾角之分量。在此處所述之替代配置中,PU 32將偏振器323與分析儀325設置成具有交叉之偏振,或者操作員23預設該等定向,以使來自該等表面及層38和40內側之鏡面反射被吸收,而來自物體46之被消偏振之輻射則透射過。交叉之偏振由此提供物體46之與物體周圍材料具有高反差之良好影像。Referring again to Figure 6, an alternative radiation configuration uses polarized illumination radiation. As shown in FIG. 6, a polarizer 323 can be placed after source 50 and an analyzer 325 placed in front of sensor 56. Alternatively, since source 50 typically provides polarized radiation, polarizer 323 may not be required. The orientation of polarizer 323, or the orientation of source 50 (if its radiation is polarized), and the orientation of analyzer 325 can be controlled by PU 32. Alternatively, the orientations can be preset by the operator 23 to a substantially fixed value. The reflection of the surface 36 and the intermediate surface of the PCB 24 (e.g., the interface between layer 38 and layer 40) is substantially the same as the incident polarization of the low incident angle. The backscattered radiation from layers 38 and 40 is relatively weak and is primarily polarized in the same direction as the incident polarized radiation. However, if the object 46 has even a partially roughened metal surface (as is often the case for improving the adhesion between the object and its embedded resin), the reflected radiation is substantially depolarized and thus has a 90° angle with the incident polarized radiation. The component of the angle. In an alternative configuration described herein, the PU 32 sets the polarizer 323 and analyzer 325 to have crossed polarizations, or the operator 23 presets the orientations such that the surfaces and layers 38 and 40 are inside. The specular reflection is absorbed and the depolarized radiation from object 46 is transmitted. The polarization of the intersection thus provides a good image of the object 46 with a high contrast to the material surrounding the object.

在用於使照明輻射偏振之一替代實施方案中,既不使用偏振器323,亦不使用分析儀325。而是,將源50構建成提供偏振照明,且將分束鏡326配置成一能透射來自該源之偏振照明之偏振分束鏡。該偏振分束鏡用以將被消偏振之輻射(包含來自物體46之輻射)反射至感測器56,由此如上文所述形成物體之良好影像。In an alternative embodiment for polarizing illumination radiation, neither polarizer 323 nor analyzer 325 is used. Rather, source 50 is constructed to provide polarized illumination, and beam splitter 326 is configured to be a polarizing beam splitter that transmits polarized illumination from the source. The polarizing beam splitter mirror is used to reflect the depolarized radiation (including radiation from object 46) to sensor 56, thereby forming a good image of the object as described above.

重新參見第1圖,可在源50之波長下將分束鏡52配置成一偏振分束鏡,以使裝置20中之感測器56所形成之物體46之影像實質類似於在裝置320中所形成之影像。Referring again to FIG. 1, the beam splitter 52 can be configured as a polarizing beam splitter at the wavelength of the source 50 such that the image of the object 46 formed by the sensor 56 in the device 20 is substantially similar to that in the device 320. The image formed.

上文所述之偏振實施例使感測器56能夠對來自物體46及其周圍環境之返回輻射進行偏振分析。The polarization embodiment described above enables the sensor 56 to perform polarization analysis of the return radiation from the object 46 and its surroundings.

在各偏振實施例中,為減小斑點,源50可包含一其相干長度小於所加工物體之尺寸之雷射發射器。例如,對於圓形焊墊,該相干長度可明顯小於焊墊直徑。亦可使用其他方法來減小斑點,例如使用上文所例示之方法。In each polarization embodiment, to reduce speckle, source 50 can include a laser emitter having a coherence length that is less than the size of the object being processed. For example, for a circular pad, the coherence length can be significantly less than the pad diameter. Other methods can also be used to reduce the spots, for example using the methods exemplified above.

上文所述各實施例係關於使用PCB 24及/或所嵌入物體46之光學影像來調整PCB之實際微加工位置。然而,應瞭解,PU 32亦可使用PCB及/或所嵌入物體之其他類型之影像來確定所需之實際位置。此外,應理解,本發明之實施例亦可用於對嵌入除PCB以外之材料(例如陶瓷或玻璃)中或表面上之物體進行成像。此項技術之一般技術者無需進行過度試驗便能夠修改上文說明,使其適應於其他類型之影像所需之變化。The various embodiments described above relate to adjusting the actual micromachining position of the PCB using optical images of the PCB 24 and/or the embedded object 46. However, it should be understood that the PU 32 may also use the PCB and/or other types of images of the embedded object to determine the actual location desired. Moreover, it should be understood that embodiments of the present invention can also be used to image objects embedded in or on materials other than PCBs, such as ceramic or glass. Those of ordinary skill in the art will be able to adapt the above description to the changes required for other types of images without undue experimentation.

應瞭解,上述各實施例係以舉例方式加以引述,且本發明並非僅限於在上文中所作之具體顯示及說明。而是,本發明之範疇既包含上文所述各種特徵之組合及子組合,亦包含此項技術之技術者在閱讀上文說明後所將想到且在現有技術中不曾揭示之其變化及修改形式。It is to be understood that the above-described embodiments are described by way of example, and the invention is not intended to Rather, the scope of the invention is to be construed as being inclusive of the various combinations and sub-combinations of the various features described above, as well as variations and modifications which are apparent to those skilled in the form.

20...光束對準裝置20. . . Beam aligning device

21...工作站twenty one. . . workstation

22...光束源twenty two. . . Beam source

23...操作員twenty three. . . operator

24...印刷電路板(PCB)twenty four. . . Printed circuit board (PCB)

25...記憶體25. . . Memory

26...輻射光束26. . . Radiation beam

27...準直器27. . . Collimator

28...分束鏡28. . . Beam splitter

30...光學元件串30. . . Optical component string

31...一組光學元件31. . . a set of optical components

32...處理單元(PU)32. . . Processing unit (PU)

33...平移平臺33. . . Translation platform

34...鏡34. . . mirror

35...光束操控平臺35. . . Beam steering platform

36...頂面36. . . Top surface

38...層38. . . Floor

40...層40. . . Floor

42...所選區42. . . Selected area

43...部位43. . . Part

44...插圖44. . . illustration

45...平移平臺45. . . Translation platform

46...物體46. . . object

49...聚焦透鏡系統49. . . Focusing lens system

50...輻射源50. . . Radiation source

51...元件51. . . element

52...第二二向色分束鏡52. . . Second dichroic beam splitter

53...濾光片系統53. . . Filter system

54...箭頭54. . . arrow

55...聚焦透鏡55. . . Focusing lens

56...光學感測器56. . . Optical sensor

164...圖式164. . . figure

166...影像166. . . image

168...矩形像素集合168. . . Rectangular pixel set

170...矩形之偵測元件陣列170. . . Rectangular detection element array

176...影像176. . . image

178...圓形部分178. . . Round part

179...矩形像素集合179. . . Rectangular pixel set

180...矩形部分180. . . Rectangular part

320...光束對準裝置320. . . Beam aligning device

322...第二組光學元件322. . . Second set of optical components

323...元件323. . . element

324...第一組光學元件324. . . First set of optical components

325...元件325. . . element

326...分束鏡326. . . Beam splitter

330...光束對準裝置330. . . Beam aligning device

332...第二組光學元件332. . . Second set of optical components

334...第一組光學元件334. . . First set of optical components

336...透鏡系統336. . . Lens system

340...剖面圖340. . . Sectional view

342...俯視圖342. . . Top view

344...輻射配置344. . . Radiation configuration

346...大體圓環形狀之成像輻射346. . . Generally annular shape imaging radiation

348...箭頭348. . . arrow

第1圖係為根據本發明一實施例之光束對準裝置之示意圖;第2圖係為不同類型Ajinomoto累積膜(Ajinomoto Build-up Film,ABF)樹脂之百分比透射之曲線圖;第3圖係為不同類型ABF樹脂及FR4樹脂之歸一化螢光之示意性曲線圖;第4圖係為一流程圖,其顯示根據本發明一實施例,操作光束對準裝置所執行之步驟;第5A圖顯示根據本發明一實施例之光學感測器之一表面之示意圖;第5B及5C圖顯示根據本發明一實施例,圖5A所示感測器上之影像之示意圖;第6圖係為根據本發明一替代實施例,一光束對準裝置之示意圖;第7圖係為根據本發明又一替代實施例,一光束對準裝置之示意圖;以及第8圖圖解說明根據本發明一實施例,由第1圖、第6圖及/或第7圖所示裝置中之源提供之成像照明配置。1 is a schematic view of a beam aligning device according to an embodiment of the present invention; and FIG. 2 is a graph showing a percentage transmission of different types of Ajinomoto Build-up Film (ABF) resin; A schematic graph of normalized fluorescence for different types of ABF resin and FR4 resin; FIG. 4 is a flow chart showing steps performed by operating the beam alignment device in accordance with an embodiment of the present invention; The figure shows a schematic view of one surface of an optical sensor according to an embodiment of the invention; FIGS. 5B and 5C show a schematic view of the image on the sensor shown in FIG. 5A according to an embodiment of the invention; A schematic diagram of a beam aligning device in accordance with an alternative embodiment of the present invention; FIG. 7 is a schematic diagram of a beam aligning device in accordance with yet another alternative embodiment of the present invention; and FIG. 8 illustrates an embodiment of the present invention in accordance with an embodiment of the present invention An imaging illumination arrangement provided by a source in the apparatus shown in Figures 1, 6, and/or 7.

20...光束對準裝置20. . . Beam aligning device

21...工作站twenty one. . . workstation

22...光束源twenty two. . . Beam source

23...操作員twenty three. . . operator

24...印刷電路板(PCB)twenty four. . . Printed circuit board (PCB)

25...記憶體25. . . Memory

26...輻射光束26. . . Radiation beam

27...準直器27. . . Collimator

28...分束鏡28. . . Beam splitter

30...光學元件串30. . . Optical component string

31...一組光學元件31. . . a set of optical components

32...處理單元(PU)32. . . Processing unit (PU)

33...平移平臺33. . . Translation platform

34...鏡34. . . mirror

35...光束操控平臺35. . . Beam steering platform

36...頂面36. . . Top surface

38...層38. . . Floor

40...層40. . . Floor

42...所選區42. . . Selected area

43...部位43. . . Part

44...插圖44. . . illustration

45...平移平臺45. . . Translation platform

46...物體46. . . object

49...聚焦透鏡系統49. . . Focusing lens system

50...輻射源50. . . Radiation source

51...元件51. . . element

52...第二二向色分束鏡52. . . Second dichroic beam splitter

53...濾光片系統53. . . Filter system

54...箭頭54. . . arrow

55...聚焦透鏡55. . . Focusing lens

56...光學感測器56. . . Optical sensor

Claims (46)

一種用於微加工一材料之方法,包含:配置一光學系統,經由該光學系統之一給定元件對該材料之一部位提供處於一照明波長之照明,該照明自該部位產生返回輻射;配置該光學系統,以經由該給定元件接收該返回輻射,並據此形成該部位之一影像;根據該影像計算該部位處一定位之一實際位置,並輸出一指示該定位之該實際位置之信號;產生一微加工輻射光束,其具有不同於該照明波長之微加工一波長;因應該信號而相對於該定位確定該光束之位置,以形成一對準光束;以及經由該光學系統之至少該給定元件將該對準光束傳遞至該定位,以在該定位處執行一微加工操作。 A method for micromachining a material, comprising: configuring an optical system to provide illumination of an illumination wavelength at a portion of the material via a given component of the optical system, the illumination generating return radiation from the portion; The optical system receives the return radiation via the given component and forms an image of the portion according to the image; calculates an actual position of the location at the location according to the image, and outputs an actual position indicating the location Generating a micromachined radiation beam having a micromachined wavelength different from the illumination wavelength; determining the position of the beam relative to the location in response to the signal to form an alignment beam; and at least via the optical system The given element transmits the alignment beam to the location to perform a micromachining operation at the location. 如請求項1所述之方法,其中該部位包含嵌入至少一個絕緣基板中之一物體。 The method of claim 1, wherein the portion comprises an object embedded in the at least one insulating substrate. 如請求項2所述之方法,其中對該部位提供照明包含提供僅對環繞該物體之一區進行照明之結構化照明。 The method of claim 2, wherein providing illumination to the portion comprises providing structured illumination that only illuminates an area surrounding the object. 如請求項3所述之方法,其中提供該結構化照明包含以一衍射元件形成該結構化照明。 The method of claim 3, wherein providing the structured illumination comprises forming the structured illumination with a diffractive element. 如請求項1所述之方法,其中對該部位提供照明包含將該照明波長選擇成一使該部位發出螢光之波長,且其中該返回輻射包含因應該所提供照明而在該部位處產生之螢光輻射。 The method of claim 1, wherein providing illumination to the portion comprises selecting the illumination wavelength to be a wavelength that causes the portion to emit fluorescence, and wherein the return radiation comprises a firefly generated at the portion due to illumination provided Light radiation. 如請求項5所述之方法,其包含過濾該螢光輻射,以使該部位之影像最佳化。 The method of claim 5, comprising filtering the fluorescent radiation to optimize imaging of the portion. 如請求項1所述之方法,其中對該部位提供照明包含對該部位提供偏振照明,且其中形成該部位之該影像包含對來自該部位之該返回輻射進行偏振分析。 The method of claim 1, wherein providing illumination to the portion comprises providing polarized illumination to the portion, and wherein the image forming the portion comprises polarization analysis of the returned radiation from the portion. 如請求項1所述之方法,其中該給定元件包含一可操控之鏡。 The method of claim 1 wherein the given component comprises a steerable mirror. 如請求項8所述之方法,其中該部位包含要在其中執行微加工之複數個不同子部位,且其中確定該光束之位置包含藉由僅操控該鏡而將該光束射至該複數個不同子部位。 The method of claim 8, wherein the portion includes a plurality of different sub-portions in which micromachining is to be performed, and wherein determining the position of the beam comprises directing the beam to the plurality of different ones by merely manipulating the mirror Subpart. 如請求項1所述之方法,其中該給定元件包含一光學元件串,該光學元件串用以將該光束及該照明聚焦至該部位。 The method of claim 1, wherein the given element comprises a string of optical elements for focusing the beam and the illumination to the location. 如請求項1所述之方法,其中該部位包含一部位區域,且其中對該部位提供照明包含對該部位區域及對不大於該部位區域且與其鄰近之另一區域提供照明。 The method of claim 1, wherein the portion comprises a portion of the region, and wherein providing illumination to the portion comprises providing illumination to the portion of the portion and to another region that is no greater than and adjacent to the portion of the portion. 如請求項11所述之方法,其中形成該影像包含在一影像感測器上形成該影像,且其中該照明具有一在3毫秒或更短時間內在該影像感測器上產生該影像之強度。 The method of claim 11, wherein the forming the image comprises forming the image on an image sensor, and wherein the illumination has an intensity of the image generated on the image sensor within 3 milliseconds or less. . 如請求項11所述之方法,其中形成該影像包含在包含一像素陣列之一影像感測器上形成該影像,並因應該區域及該另一區域而自該陣列中選擇像素以用於分析該影像。 The method of claim 11, wherein forming the image comprises forming the image on an image sensor comprising an array of pixels, and selecting pixels from the array for analysis according to the region and the other region The image. 如請求項1所述之方法,其包含在對該部位提供該照明之前確定該定位之一名義位置,並因應該名義位置而提供該照明。 The method of claim 1 , comprising determining a nominal location of the location prior to providing the illumination to the location, and providing the illumination in response to the nominal location. 如請求項1所述之方法,其中產生該微加工輻射光束包含: 產生一低功率光束,該光束之一功率低於該部位之一燒蝕臨限值;將該低功率光束傳遞至該部位;以及因應該低功率光束在該部位之一影像而確定該光束之一偏移量。 The method of claim 1, wherein generating the micromachined radiation beam comprises: Generating a low power beam having a power below an ablation threshold of the portion; transmitting the low power beam to the location; and determining the beam due to an image of the low power beam at the location An offset. 如請求項15所述之方法,其中確定該光束之位置包含因應該偏移量而確定該光束之位置。 The method of claim 15 wherein determining the position of the beam comprises determining the position of the beam due to the amount of offset. 如請求項15所述之方法,其中將該已確定位置之光束傳遞至該定位包含將該光束設定成具有等於或大於該燒蝕臨限值之一功率。 The method of claim 15, wherein the transmitting the beam of the determined position to the location comprises setting the beam to have a power equal to or greater than the ablation threshold. 如請求項1所述之方法,其包含將該照明波長配置成具有使該部位為非吸收性之一值。 The method of claim 1, comprising configuring the illumination wavelength to have a value that renders the portion non-absorbent. 如請求項1所述之方法,其中該部位包含一外表面,且其中對該部位提供照明包含以垂直於該外表面之成像輻射對該部位進行照明。 The method of claim 1 wherein the portion comprises an outer surface, and wherein providing illumination to the portion comprises illuminating the portion with imaging radiation perpendicular to the outer surface. 如請求項1所述之方法,其中對該部位提供照明包含在該部位提供相干成像輻射,該相干成像輻射具有一等於或小於該部位之一尺寸之二倍之相干長度。 The method of claim 1 wherein providing illumination to the portion comprises providing coherent imaging radiation at the portion, the coherent imaging radiation having a coherence length equal to or less than twice the size of one of the portions. 如請求項1所述之方法,其中計算該實際位置包含:根據該部位之一預期影像提供一理論關係;根據該影像確定一實際關係;以及將該實際關係擬合至該理論關係。 The method of claim 1, wherein calculating the actual location comprises: providing a theoretical relationship according to one of the expected images of the location; determining an actual relationship based on the image; and fitting the actual relationship to the theoretical relationship. 如請求項1所述之方法,其中形成該部位之該影像包含調整 該照明波長與該照明之一功率中之至少一者,以改變該照明在該部位處之一穿透深度。 The method of claim 1, wherein the image forming the portion includes an adjustment At least one of the illumination wavelength and one of the illumination powers to change a penetration depth of the illumination at the location. 如請求項1所述之方法,其中該部位包含嵌入一漫射層中之一物體,且包含補償由嵌入該漫射層中之該物體所形成之該影像而造成之一偏差。 The method of claim 1 wherein the portion comprises an object embedded in a diffusing layer and comprising compensating for the image formed by the object embedded in the diffusing layer to cause a deviation. 一種用於微加工一材料之裝置,包含:一輻射源,其用以經由一光學系統之一給定元件對該材料之一部位提供處於一照明波長之照明,該照明自該部位產生返回輻射;一影像感測器,其用以藉由該給定元件接收該返回輻射,並據此形成該部位之一影像;一光束源,其用以產生一微加工輻射光束,該微加工輻射光束具有不同於該照明波長之一微加工波長;以及一處理器,其用以根據該影像計算該部位處一定位之一實際位置,並輸出一指示該定位之該實際位置之信號,因應該信號而相對於該定位確定該光束之位置以形成一對準光束,及操作該光束源,以經由該光學系統之至少該給定元件將該對準光束傳遞至該定位,藉以在該定位處執行一微加工操作。 An apparatus for micromachining a material, comprising: a radiation source for providing illumination of an illumination wavelength at a portion of the material via a given component of an optical system, the illumination generating return radiation from the portion An image sensor for receiving the return radiation by the given component and thereby forming an image of the portion; a beam source for generating a micromachined radiation beam, the micromachined radiation beam Having a micromachining wavelength different from the illumination wavelength; and a processor for calculating an actual position of the location at the location based on the image and outputting a signal indicative of the actual location of the location, corresponding to the signal Determining a position of the beam relative to the location to form an alignment beam, and operating the beam source to deliver the alignment beam to the location via at least the given component of the optical system for execution at the location A micromachining operation. 如請求項24所述之裝置,其中該部位包含嵌於至少一個絕緣基板中之一物體。 The device of claim 24, wherein the portion comprises an object embedded in the at least one insulating substrate. 如請求項25所述之裝置,其中對該部位提供照明包含提供僅對環繞該物體之一區進行照明之結構化照明。 The device of claim 25, wherein providing illumination to the portion comprises providing structured illumination that only illuminates an area surrounding the object. 如請求項26所述之裝置,其包含形成該結構化照明之一衍射元件。 The device of claim 26, comprising a diffractive element forming the structured illumination. 如請求項24所述之裝置,其中該照明波長包含使該部位發出螢光之一波長,且其中該返回輻射包含因應該所提供照明而在該部位處產生之螢光輻射。 The device of claim 24, wherein the illumination wavelength comprises causing the portion to emit a wavelength of fluorescence, and wherein the return radiation comprises fluorescent radiation generated at the portion due to illumination provided. 如請求項28所述之裝置,其包含用以過濾該螢光輻射之一組濾光片,且其中該處理器用以選擇該組濾光片其中之一,俾該部位之該影像最佳化。 The device of claim 28, comprising: a filter for filtering the fluorescent radiation, wherein the processor is configured to select one of the set of filters, and the image is optimized for the portion . 如請求項24所述之裝置,其中該照明包含偏振照明,且包含使該影像感測器能夠對來自該部位之該返回輻射進行偏振分析之一偏振元件。 The device of claim 24, wherein the illumination comprises polarized illumination and comprises a polarization element that enables the image sensor to perform polarization analysis of the return radiation from the portion. 如請求項24所述之裝置,其中該給定元件包含一可操控之鏡。 The device of claim 24, wherein the given component comprises a steerable mirror. 如請求項31所述之裝置,其中該部位包含要在其中執行微加工之複數個不同子部位,且其中確定該光束之位置包含藉由僅操控該鏡而將該光束射至該複數個不同子部位。 The device of claim 31, wherein the portion includes a plurality of different sub-portions in which micromachining is to be performed, and wherein determining the position of the beam comprises directing the beam to the plurality of different ones by merely manipulating the mirror Subpart. 如請求項24所述之裝置,其中該給定元件包含一光學元件串,用以將該光束及該照明聚焦至該部位。 The device of claim 24, wherein the given element comprises a string of optical elements for focusing the beam and the illumination to the location. 如請求項24所述之裝置,其中該部位包含一部位區域,且其中對該部位提供照明包含對該部位區域及對不大於該部位區域且與其鄰近之另一區域提供照明。 The device of claim 24, wherein the portion comprises a portion of the region, and wherein providing illumination to the portion comprises providing illumination to the portion of the portion and to another region that is no greater than the portion of the portion and adjacent thereto. 如請求項24所述之裝置,其中該照明具有一在3毫秒或更短時間內在該影像感測器上產生該影像之強度。 The device of claim 24, wherein the illumination has an intensity of the image produced on the image sensor within 3 milliseconds or less. 如請求項24所述之裝置,其中該影像感測器包含一像素陣 列,且其中該處理器用以因應該區域及該另一區域而自該陣列中選擇像素來用於分析該影像。 The device of claim 24, wherein the image sensor comprises a pixel array a column, and wherein the processor is configured to select pixels from the array for analyzing the image in response to the region and the other region. 如請求項24所述之裝置,其中該處理器用以在該輻射源對該部位提供該照明之前確定該定位之一名義位置,且其中該處理器用以因應該名義位置而指令該輻射源提供該照明。 The device of claim 24, wherein the processor is configured to determine a nominal location of the location before the source of illumination provides the illumination to the location, and wherein the processor is configured to instruct the source to provide the location based on the nominal location illumination. 如請求項24所述之裝置,其中產生該微加工輻射光束包含產生一低功率光束,該光束之一功率低於該部位之一燒蝕臨限值,且其中該處理器用以將該低功率光束傳遞至該部位、以及因應該部位處該低功率光束在該影像感測器上之一影像而確定該光束之一偏移量。 The apparatus of claim 24, wherein generating the micromachined radiation beam comprises generating a low power beam having a power below an ablation threshold of the portion, and wherein the processor is to use the low power The beam is transmitted to the location and an offset of the beam is determined based on an image of the low power beam at the location on the image sensor. 如請求項38所述之裝置,其中確定該光束之位置包含因應該偏移量而確定該光束之位置。 The device of claim 38, wherein determining the position of the beam comprises determining the position of the beam due to the amount of offset. 如請求項39所述之裝置,其中將該對準光束傳遞至該定位包含將該光束設定成一具有等於或大於該燒蝕臨限值之功率。 The apparatus of claim 39, wherein the transmitting the alignment beam to the location comprises setting the beam to a power having a threshold equal to or greater than the ablation threshold. 如請求項24所述之裝置,其包含將該照明波長配置成具有使該部位為非吸收性之一值。 The device of claim 24, comprising configuring the illumination wavelength to have a value that renders the portion non-absorbent. 如請求項24所述之裝置,其中該部位包含一外表面,且其中對該部位提供照明包含以垂直於該外表面之成像輻射對該部位照明。 The device of claim 24, wherein the portion comprises an outer surface, and wherein providing illumination to the portion comprises illuminating the portion with imaging radiation perpendicular to the outer surface. 如請求項24所述之裝置,其中該輻射源用以在該部位提供相干成像輻射,該相干成像輻射具有一度等於或小於該部位之一尺寸之二倍之相干長度。 The device of claim 24, wherein the source of radiation is to provide coherent imaging radiation at the location, the coherent imaging radiation having a coherence length that is once equal to or less than twice the size of one of the locations. 如請求項24所述之裝置,其中該處理器用以: 接收依據於該部位之一預期影像之一理論關係;根據該影像確定一實際關係;以及將該實際關係擬合至該理論關係。 The device of claim 24, wherein the processor is configured to: Receiving a theoretical relationship based on one of the expected images of the location; determining an actual relationship based on the image; and fitting the actual relationship to the theoretical relationship. 如請求項24所述之裝置,其中該處理器用以調整該照明波長與該照明之一功率中之至少一者,以改變該照明在該部位處之一穿透深度。 The device of claim 24, wherein the processor is operative to adjust at least one of the illumination wavelength and the illumination power to change a penetration depth of the illumination at the location. 如請求項24所述之裝置,其中該部位包含嵌入一漫射層中之一物體,且其中該處理器用以補償由嵌入該漫射層中之該物體所形成之該影像而造成之一偏差。 The device of claim 24, wherein the portion comprises an object embedded in a diffusing layer, and wherein the processor is configured to compensate for a deviation caused by the image formed by the object embedded in the diffusing layer .
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