TWI402851B - Electronic devices and the related data transmission methods - Google Patents

Electronic devices and the related data transmission methods Download PDF

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TWI402851B
TWI402851B TW97110968A TW97110968A TWI402851B TW I402851 B TWI402851 B TW I402851B TW 97110968 A TW97110968 A TW 97110968A TW 97110968 A TW97110968 A TW 97110968A TW I402851 B TWI402851 B TW I402851B
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data
buffer unit
result signal
electronic device
error checking
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TW200941486A (en
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Gao Mingxing
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Via Tech Inc
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電子裝置與其資料傳輸方法Electronic device and data transmission method thereof

本發明有關於資料傳輸,特別係有關於快閃記憶體之資料傳輸。The invention relates to data transmission, in particular to data transmission of flash memory.

一般的隨機存取記憶體(Dynamic Random Access Memory,DRAM)運作原理,使用類似電容的充放電來決定儲存位元的0或1,也必須間隔地對DRAM做重新充放電的動作,以確保儲存資料的存在。然而,快閃記憶體(Flash Memory),其儲存的單位稱為一個基本位元(Cell),其內部氧化金屬半導體元件(Metal-Oxide Semiconductor,MOS)的閘級(Gate)和通道(Channel)間,比傳統的只有一層氧化絕緣層(gate oxide),又多增加了一層浮閘(floating gate)。也因為有這一層浮閘,使得快閃記憶體可以運作三種模式:寫入、讀出、抹除。當負電子被注入浮閘時,此一cell就從數位1被寫為0,當負電子被移走後,此一cell相當於從0變為1,相當於抹除的動作。The general principle of random access memory (DRAM) operation, using the charge and discharge of similar capacitors to determine the 0 or 1 of the storage bit, must also recharge and discharge the DRAM to ensure storage The existence of information. However, the flash memory, the unit of storage is called a basic cell, and the gate and gate of the internal metal-oxide-semiconductor (MOS) device. In addition, there is only one layer of oxide oxide than the conventional one, and another layer of floating gate is added. Also because of this layer of floating gates, the flash memory can operate in three modes: writing, reading, and erasing. When a negative electron is injected into the floating gate, the cell is written as 0 from the digit 1. When the negative electron is removed, the cell is equivalent to changing from 0 to 1, which is equivalent to the erase operation.

再者,相較於傳統的儲存設備,快閃記憶體由於其低功耗、高可靠度以及不怕振動等特性與製造成本的下降,已經逐漸成為傳統儲存設備的替代品。然而,由於快閃記憶體通常會帶來比較高的錯誤率,所以為了能夠滿足高可靠性的要求,都需要採用一特定的演算法來對資料進行錯誤檢查與校正。Moreover, compared with the traditional storage devices, flash memory has gradually become a substitute for traditional storage devices due to its low power consumption, high reliability, and fear of vibration and other manufacturing costs. However, since flash memory usually brings a relatively high error rate, in order to meet the requirements of high reliability, a specific algorithm is needed to perform error checking and correction on the data.

本發明係提供一種電子裝置,包括快閃記憶體、記憶體控制器、緩衝單元與錯誤檢查與校正電路,其中快閃記憶體用以儲存一第一資料,記憶體控制器係將未經過錯誤檢查與校正之第一資料平行寫入緩衝單元與錯誤檢查與校正電路,並且錯誤檢查與校正電路對第一資料進行錯誤檢查與校正,以便輸出一結果信號至緩衝單元,並且緩衝單元係根據結果信號,校正第一資料,作為一第一有效資料。The invention provides an electronic device comprising a flash memory, a memory controller, a buffer unit and an error checking and correcting circuit, wherein the flash memory is used for storing a first data, and the memory controller is not subjected to an error. Checking and writing the first data in parallel with the error checking and correcting circuit, and the error checking and correcting circuit performs error checking and correction on the first data to output a result signal to the buffer unit, and the buffer unit is based on the result The signal corrects the first data as a first valid data.

本發明亦提供一種電子裝置,包括一緩衝單元;一快閃記憶體,用以儲存複數筆資料;一記憶體控制器,用以依序輸出將未經過錯誤檢查與校正之複數筆資料;一錯誤檢查與校正電路係用以對複數筆資料進行錯誤檢查與校正,以便產生對應之複數個結果信號;以及一仲裁單元,用以將記憶體控制器所輸出之複數筆資料依序傳輸至緩衝單元,並且於接收至複數個結果信號中之一者時,中斷目前之資料傳輸,將該結果信號傳輸至緩衝單元中;其中緩衝單元係根據該結果信號,校正複數筆資料中對應之一者,以便作為一有效資料。The invention also provides an electronic device comprising a buffer unit; a flash memory for storing a plurality of data; and a memory controller for sequentially outputting a plurality of data without error checking and correction; The error checking and correcting circuit is configured to perform error checking and correction on the plurality of pieces of data to generate a corresponding plurality of result signals; and an arbitration unit for sequentially transmitting the plurality of pieces of data output by the memory controller to the buffer And receiving, by the unit, one of the plurality of result signals, interrupting the current data transmission, and transmitting the result signal to the buffer unit; wherein the buffer unit corrects one of the plurality of data according to the result signal In order to serve as a valid material.

本發明亦提供一種資料傳輸方法,包括由一快閃記憶體中讀取出接收一第一資料;將未經過錯誤檢查與校正之第一資料平行寫入一緩衝單元;將第一資料寫入一緩衝單元的同時,對第一資料進行錯誤檢查與校正,以便產生一結果信號;以及藉由結果信號校正第一資料,作為一有效資料。The present invention also provides a data transmission method, comprising: reading and receiving a first data from a flash memory; writing a first data that has not undergone error checking and correction into a buffer unit; writing the first data Simultaneously, a buffer unit performs error checking and correction on the first data to generate a result signal; and corrects the first data as a valid data by the result signal.

本發明亦提供一種資料傳輸方法,包括接收複數筆資料;將複數筆資料依序輸出至一緩衝單元的同時,依序對複數筆資料進行錯誤檢查與校正,以便產生對應之複數個結果信號;於接收到複數個結果信號中之一者,中斷目前之資料傳輸並將結果信號傳輸至緩衝單元中;以及藉由緩衝單元,根據結果信號,校正複數筆資料中對應之一者,以便作為一有效資料。The invention also provides a data transmission method, which comprises receiving a plurality of data; and sequentially outputting the plurality of data to a buffer unit, and sequentially performing error checking and correction on the plurality of data to generate a corresponding plurality of result signals; Receiving one of the plurality of result signals, interrupting the current data transmission and transmitting the result signal to the buffer unit; and correcting one of the plurality of data according to the result signal by the buffer unit to serve as a Valid information.

為了讓本發明之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉一較佳實施例,並配合所附圖示,作詳細說明如下:The above and other objects, features, and advantages of the present invention will become more apparent and understood.

本發明為提高整個電子系統的數據傳輸性能,由電子系統中的快閃記憶體中讀取的原始資料會通過記憶體控制器直接送入到一資料緩衝區中,無論資料是否有錯誤。如本領域技術人員所了解的,本發明的資料緩衝區為廣義的,而並不限於本地的小容量存儲單元,例如,可以是計算機系統的主存儲器。雖然原始資料已經保存到資料緩衝區中,但是此時資料並不能直接發送給後端設備,只有檢錯糾錯完成以後才允許資料發送至後端設備。若錯誤檢查與校正電路檢測到資料錯誤,則可在資料緩衝區中進行資料的糾錯。在糾錯的同時,後面的原始資料可以繼續不間斷的送入到資料緩衝區中,這樣快閃記憶體的匯流排就不會因為糾錯的進行而停滯下來。In order to improve the data transmission performance of the entire electronic system, the original data read by the flash memory in the electronic system is directly sent to a data buffer through the memory controller, regardless of whether the data is erroneous or not. As will be appreciated by those skilled in the art, the data buffer of the present invention is broadly defined and is not limited to local small-capacity storage units, for example, may be the main memory of a computer system. Although the original data has been saved to the data buffer, the data cannot be directly sent to the backend device at this time, and the data is allowed to be sent to the backend device only after the error detection and correction is completed. If the error check and correction circuit detects a data error, the data can be corrected in the data buffer. At the same time of error correction, the following original data can continue to be sent to the data buffer without interruption, so that the bus of the flash memory will not be stopped due to the error correction.

第1圖係顯示一電子裝置之一示意圖。如圖所示,電子裝置100A包括一快閃記憶體10、一記憶體控制器20、錯誤檢查與校正(Error Check and Correct;ECC)電路30、緩衝單元40以及一介面單元50。舉例而言,電子裝置200係可為一電腦系統,而電子裝置100A係可為一儲存裝置,例如一隨身硬碟、一固態硬碟(Solid State Disk;SSD),但不限定於此。Figure 1 is a schematic diagram showing one of an electronic device. As shown, the electronic device 100A includes a flash memory 10, a memory controller 20, an Error Check and Correct (ECC) circuit 30, a buffer unit 40, and an interface unit 50. For example, the electronic device 200 can be a computer system, and the electronic device 100A can be a storage device, such as a portable hard disk, a solid state disk (SSD), but is not limited thereto.

快閃記憶體10係用以為一非易失性記憶體,用以儲存資料。記憶體控制器20係用以讀取出快閃記憶體10中所儲存之資料,並輸出至錯誤檢查與校正電路30與緩衝單元40。緩衝單元40係可為一先進先出緩衝器(first in first out;FIFO),但不限定於此。緩衝單元40係包括一儲存佇列42用以儲存資料以及一控制邏輯電路44用以控制緩衝單元40的動作,並且儲存佇列42係由複數緩衝區421~423所組成。介面單元50係可藉由通用串列匯流排(Universal Serial Bus;USB)、整合電子式驅動技術(Integrated Device Electronic;IDE)或串列先進配置技術(Serial Advanced Technology Attachment;SATA)與電子裝置200進行資料傳輸,但不限定於此。The flash memory 10 is used as a non-volatile memory for storing data. The memory controller 20 is configured to read the data stored in the flash memory 10 and output it to the error checking and correction circuit 30 and the buffer unit 40. The buffer unit 40 can be a first in first out (FIFO), but is not limited thereto. The buffer unit 40 includes a storage array 42 for storing data and a control logic circuit 44 for controlling the operation of the buffer unit 40, and the storage array 42 is composed of a plurality of buffers 421 to 423. The interface unit 50 can be connected to the electronic device 200 by a Universal Serial Bus (USB), an Integrated Device Electronic (IDE), or a Serial Advanced Technology Attachment (SATA). Data transmission is performed, but is not limited to this.

在本發明之實施例中,記憶體控制器20係直接將從快閃記憶體10所讀出之原始資料OD(即未經過錯誤檢查與校正之資料)寫入緩衝單元40中,而不需等待錯誤檢查與校正電路30對原始資料OD進行錯誤檢查與校正。緩衝單元40則會根據錯誤檢查與校正電路30對原始資料OD進行錯誤檢查與校正所產生的結果信號RS,校正原始資料OD並作為一有效資料VS,再藉由介面單元50將有效資料VS傳送到電子裝置200。因此,快閃記憶體10與記憶體控制器20間之資料傳輸將不會因為錯誤檢查與校正而中斷,故可避免系統的效能下降。In the embodiment of the present invention, the memory controller 20 directly writes the original data OD (ie, the data that has not undergone error checking and correction) read from the flash memory 10 into the buffer unit 40 without The error checking and correction circuit 30 is waited for error checking and correction of the original material OD. The buffer unit 40 corrects the original data OD and acts as a valid data VS according to the error check and correction circuit 30 for error detection and correction of the original data OD, and transmits the valid data VS through the interface unit 50. Go to the electronic device 200. Therefore, the data transmission between the flash memory 10 and the memory controller 20 will not be interrupted due to error checking and correction, so that the performance degradation of the system can be avoided.

電子裝置100A之細部動作係配合第2圖說明如下。如圖中所示,S1係代表由記憶體控制器20寫入至緩衝單元40之一資料流,S2係代表錯誤檢查與校正週期,S3係代表錯誤檢查與校正電路30輸出之結果信號RS的資料流,而S4係代表由緩衝單元40傳送至電子裝置200之有效資料的資料流。The detailed operation of the electronic device 100A will be described below with reference to Fig. 2 . As shown in the figure, S1 represents a data stream written by the memory controller 20 to the buffer unit 40, S2 represents an error check and correction cycle, and S3 represents a result signal RS output by the error check and correction circuit 30. The data stream, and S4 is a data stream representing the valid data transmitted by the buffer unit 40 to the electronic device 200.

記憶體控制器20係將由快閃記憶體10所讀出之原始資料OD1~OD3(即未經過錯誤檢查與校正之資料)依序寫入緩衝單元40中,並在此同時記憶體控制器20亦將原始資料OD1~OD3依序傳送給錯誤檢查與校正電路30進行錯誤檢查與校正。舉例而言,記憶體控制器20會將原始資料OD1~OD3依序寫入緩衝單元40中之緩衝區421~423中。The memory controller 20 sequentially writes the original data OD1 OD3 (that is, the data that has not undergone error checking and correction) read by the flash memory 10 into the buffer unit 40, and at the same time, the memory controller 20 The original data OD1~OD3 are also sequentially transmitted to the error checking and correction circuit 30 for error checking and correction. For example, the memory controller 20 sequentially writes the original data OD1 OD3 to the buffers 421 423 423 in the buffer unit 40.

於錯誤檢查與校正週期ECC1中,錯誤檢查與校正電路30則對原始資料OD1進行錯誤檢查與校正,以便產生一對應之結果信號RS1,並輸出至緩衝單元40。緩衝單元40則根據結果信號RS1校正儲存於緩衝區421之原始資料OD1,以作為一有效資料VS1。此時,緩衝單元40才可藉由介面單元50將有效資料VS1傳送到電子裝置200。In the error check and correction period ECC1, the error check and correction circuit 30 performs error check and correction on the original data OD1 to generate a corresponding result signal RS1, and outputs it to the buffer unit 40. The buffer unit 40 corrects the original data OD1 stored in the buffer 421 according to the result signal RS1 as a valid data VS1. At this time, the buffer unit 40 can transmit the valid data VS1 to the electronic device 200 through the interface unit 50.

於錯誤檢查與校正週期ECC2中,錯誤檢查與校正電路30則對原始資料OD2進行錯誤檢查與校正,以便產生一對應之結果信號RS2,並輸出至緩衝單元40。緩衝單元40則根據結果信號RS2校正儲存於緩衝區422之原始資料OD2,以作為一有效資料VS2。此時,緩衝單元40才可藉由介面單元50將有效資料VS2傳送到電子裝置200,依此類推。此外,在某些實施例中,亦可使用多個錯誤檢查與校正電路30用以同時對多筆原始資料進行錯誤檢查與校正。In the error check and correction period ECC2, the error check and correction circuit 30 performs error check and correction on the original data OD2 to generate a corresponding result signal RS2, and outputs it to the buffer unit 40. The buffer unit 40 corrects the original data OD2 stored in the buffer 422 according to the result signal RS2 as a valid data VS2. At this time, the buffer unit 40 can transmit the valid data VS2 to the electronic device 200 through the interface unit 50, and so on. Moreover, in some embodiments, multiple error checking and correction circuits 30 can be used to simultaneously perform error checking and correction on multiple pieces of original data.

第3圖係為本發明之電子裝置之另一實施例。如圖所示,電子裝置100B係與第1圖中所示者相似,其差異在於設置一仲裁單元60於記憶體控制器20和錯誤檢查與校正電路30與緩衝單元40之間。仲裁單元60用以選擇性地輸出來自記憶體控制器20之原始資料或來自錯誤檢查與校正電路30之結果信號。Figure 3 is another embodiment of the electronic device of the present invention. As shown, the electronic device 100B is similar to that shown in FIG. 1 except that an arbitration unit 60 is disposed between the memory controller 20 and the error checking and correction circuit 30 and the buffer unit 40. Arbitration unit 60 is operative to selectively output raw data from memory controller 20 or result signals from error checking and correction circuit 30.

在此實施例中,記憶體控制器20則會將由快閃記憶體10所讀出之原始資料OD1(即未經過錯誤檢查與校正之資料)輸出至仲裁單元60,並在此同時記憶體控制器20亦將原始資料OD1傳送給錯誤檢查與校正電路30進行錯誤檢查與校正。此時,由於原始資料OD1之錯誤檢查與校正尚未完成,因此,仲裁單元60則會將所接收到之原始資料OD1寫入緩衝單元40之緩衝區421中。接著,記憶體控制器20則會由快閃記憶體10依序讀出原始資料OD2與OD3,並依序輸出至仲裁單元60,而仲裁單元60則將所接到之原始資料OD2與OD3依序寫入緩衝單元40之緩衝區422與423中。當完成原始資料OD1之錯誤檢查與校正時,錯誤檢查與校正電路30會產生一對應之結果信號RS1,輸出至仲裁單元60。當仲裁單元60接收結果信號RS1時,中斷目前之資料傳輸,將結果信號RS1傳輸至緩衝單元40中,然後再恢復資料傳輸。此外,緩衝單元40係根據結果信號RS1,校正原始資料OD1,以便作為一有效資料VS1。此時,緩衝單元40才可藉由介面單元50,將有效資料VS1傳輸至電子裝置200,依此類推。In this embodiment, the memory controller 20 outputs the original data OD1 read by the flash memory 10 (ie, data that has not undergone error checking and correction) to the arbitration unit 60, and at the same time, the memory control. The device 20 also transmits the original data OD1 to the error checking and correction circuit 30 for error checking and correction. At this time, since the error check and correction of the original data OD1 have not been completed, the arbitration unit 60 writes the received original data OD1 into the buffer 421 of the buffer unit 40. Then, the memory controller 20 sequentially reads the original data OD2 and OD3 from the flash memory 10, and sequentially outputs the data OD2 and OD3 to the arbitration unit 60, and the arbitration unit 60 follows the original data OD2 and OD3 received. The sequence is written in the buffers 422 and 423 of the buffer unit 40. When the error check and correction of the original material OD1 is completed, the error check and correction circuit 30 generates a corresponding result signal RS1, which is output to the arbitration unit 60. When the arbitration unit 60 receives the result signal RS1, it interrupts the current data transmission, transmits the resultant signal RS1 to the buffer unit 40, and then resumes the data transmission. Further, the buffer unit 40 corrects the original material OD1 in accordance with the result signal RS1 so as to be a valid data VS1. At this time, the buffer unit 40 can transmit the valid data VS1 to the electronic device 200 through the interface unit 50, and so on.

第4圖係為電子裝置之另一實施例。如圖所示,電子裝置100C係與第1圖中所示之電子裝置100A相似,其差異在於更包括中央處理單元70以及匯流排80。中央處理單元70係藉由匯流排80耦接至記憶體控制器20、錯誤檢查與校正電路30、緩衝單元40與介面單元50。記憶體控制器20、錯誤檢查與校正電路30、緩衝單元40與介面單元50之動作係與第1、第2圖中所示者相同,於此不再累述。要注意的是,當錯誤檢查與校正電路30檢查出原始資料OD1~OD3中之一者無法校正時,則會產生一信號SI通知中央處理單元70,以便致能記憶體控制器20由快閃記憶體中重新讀取該筆資料,或進行其它處理。此外,當偵測到儲存佇列42已經額滿時,緩衝單元40中之控制邏輯電路44會輸出一信號SF通知記憶體控制器20,以便暫時停止資料傳輸。再者,當偵測到儲存佇列42已經清空時,緩衝單元40中之控制邏輯電路44會輸出一信號SE通知介面單元50,以便暫時停止傳輸資料至電子裝置200。Figure 4 is another embodiment of an electronic device. As shown, the electronic device 100C is similar to the electronic device 100A shown in FIG. 1 with the difference that it further includes a central processing unit 70 and a bus bar 80. The central processing unit 70 is coupled to the memory controller 20, the error checking and correction circuit 30, the buffer unit 40, and the interface unit 50 via the bus bar 80. The operations of the memory controller 20, the error check and correction circuit 30, the buffer unit 40, and the interface unit 50 are the same as those shown in Figs. 1 and 2, and will not be described again. It should be noted that when the error checking and correction circuit 30 detects that one of the original materials OD1 OD OD3 cannot be corrected, a signal SI is generated to notify the central processing unit 70 to enable the memory controller 20 to be flashed. Re-read the data in memory or perform other processing. In addition, when it is detected that the storage queue 42 has been full, the control logic circuit 44 in the buffer unit 40 outputs a signal SF to notify the memory controller 20 to temporarily stop the data transmission. Moreover, when it is detected that the storage queue 42 has been emptied, the control logic circuit 44 in the buffer unit 40 outputs a signal SE notification interface unit 50 to temporarily stop transmitting data to the electronic device 200.

總而言之,在本發明中,於原始資料OD1被錯誤檢查與校正週期時,記憶體控制器20會繼續將後續的原始資料(例如OD2、OD3…)送入緩衝單元40中,所以快閃記憶體10與記憶體控制器20間之資料傳輸將不會因為錯誤檢查與校正而中斷。再者,緩衝單元40係根據錯誤檢查與校正電路30所產生之結果信號將所接收到之資料校正後,再藉由介面單元50傳輸至電子裝置200。In summary, in the present invention, when the original data OD1 is erroneously checked and corrected, the memory controller 20 continues to send subsequent original data (for example, OD2, OD3, ...) into the buffer unit 40, so the flash memory The data transfer between the 10 and the memory controller 20 will not be interrupted due to error checking and correction. Moreover, the buffer unit 40 corrects the received data according to the result signal generated by the error check and correction circuit 30, and then transmits the data to the electronic device 200 through the interface unit 50.

雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟知技藝者,在不脫離本發明之精神和範圍內,當可作些許更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope is subject to the definition of the scope of the patent application attached.

10...快閃記憶體10. . . Flash memory

20...記憶體控制器20. . . Memory controller

30...錯誤檢查與校正電路30. . . Error checking and correction circuit

40...緩衝單元40. . . Buffer unit

42...儲存佇列42. . . Storage queue

44...控制邏輯電路44. . . Control logic

50...介面單元50. . . Interface unit

60...仲裁單元60. . . Arbitration unit

100A~100C、200...電子裝置100A~100C, 200. . . Electronic device

421~423...緩衝區421~423. . . Buffer

OD、OD1~OD3...原始資料OD, OD1~OD3. . . Source material

ECC1~ECC2...錯誤檢查與校正周期ECC1~ECC2. . . Error checking and correction cycle

RS、RS1、RS2...結果信號RS, RS1, RS2. . . Result signal

VS、VS1、VS2...有效資料VS, VS1, VS2. . . Valid data

S1...由記憶體控制器寫入至緩衝單元之資料流S1. . . Data stream written by the memory controller to the buffer unit

S2...錯誤檢查與校正週期S2. . . Error checking and correction cycle

S3...錯誤檢查與校正電路輸出的結果信號之資料流S3. . . Data flow of the result signal output by the error check and correction circuit

S4...由緩衝單元傳送至電子裝置的有效資料之資料流S4. . . Data stream of valid data transmitted by the buffer unit to the electronic device

SF、SE、SI...信號SF, SE, SI. . . signal

第1圖係顯示一電子裝置之一實施例。Figure 1 shows an embodiment of an electronic device.

第2圖係為電子裝置之一資料傳輸流程圖。Figure 2 is a flow chart of data transmission of one of the electronic devices.

第3圖係顯示一電子裝置之另一實施例。Figure 3 shows another embodiment of an electronic device.

第4圖係顯示一電子裝置之另一實施例。Figure 4 is a diagram showing another embodiment of an electronic device.

10...快閃記憶體10. . . Flash memory

20...記憶體控制器20. . . Memory controller

30...錯誤檢查與校正電路30. . . Error checking and correction circuit

40...緩衝單元40. . . Buffer unit

42...儲存佇列42. . . Storage queue

44...控制邏輯電路44. . . Control logic

50...介面單元50. . . Interface unit

60...仲裁單元60. . . Arbitration unit

100A、200...電子裝置100A, 200. . . Electronic device

421~423...緩衝區421~423. . . Buffer

OD...原始資料OD. . . Source material

RS...結果信號RS. . . Result signal

VS...有效資料VS. . . Valid data

Claims (13)

一種電子裝置,包括:一快閃記憶體,用以儲存一第一資料;一緩衝單元;一錯誤檢查與校正電路;一記憶體控制器,將上述第一資料平行寫入上述緩衝單元與上述錯誤檢查與校正電路,並且上述錯誤檢查與校正電路對上述第一資料進行錯誤檢查與校正,以便輸出一結果信號至上述緩衝單元,並且上述緩衝單元係根據上述結果信號,校正上述第一資料,作為一第一有效資料;其中上述記憶體控制器於上述錯誤檢查與校正電路對上述第一資料進行錯誤檢查與校正時,輸出一第二資料至上述緩衝單元。 An electronic device comprising: a flash memory for storing a first data; a buffer unit; an error checking and correcting circuit; a memory controller, wherein the first data is written in parallel to the buffer unit and An error checking and correcting circuit, and the error checking and correcting circuit performs error checking and correction on the first data to output a result signal to the buffer unit, and the buffer unit corrects the first data according to the result signal. As a first valid data, the memory controller outputs a second data to the buffer unit when the error checking and correcting circuit performs error checking and correction on the first data. 如申請專利範圍第1項所述之電子裝置,更包括:一仲裁單元,用以接收上述記憶體控制器所輸出之上述第一資料、上述第二資料以及上述錯誤檢查與校正電路所輸出之上述結果信號,並輸出上述第二資料與上述結果信號之一至上述緩衝單元。 The electronic device of claim 1, further comprising: an arbitration unit, configured to receive the first data, the second data output by the memory controller, and the output of the error checking and correcting circuit The result signal is outputted, and one of the second data and the result signal is outputted to the buffer unit. 如申請專利範圍第2項所述之電子裝置,其中上述仲裁單元於接到上述結果信號時,中斷上述第二資料之傳輸,以將所接收到之上述結果信號傳輸至上述緩衝單元中。 The electronic device of claim 2, wherein the arbitration unit interrupts transmission of the second data when receiving the result signal to transmit the received result signal to the buffer unit. 如申請專利範圍第1項所述之電子裝置,更包括一介面單元,用以讀取出上述緩衝單元中之上述第一有效 資料,並傳送至另一電子裝置。 The electronic device of claim 1, further comprising an interface unit for reading the first effective one of the buffer units Data and transfer to another electronic device. 如申請專利範圍第1項所述之電子裝置,其中上述緩衝單元係包括:緩衝器,用以儲存上述第一資料;以及一控制邏輯電路,用以根據上述結果信號,校正儲存於上述緩衝器中之上述第一資料,以得到上述第一有效資料。 The electronic device of claim 1, wherein the buffer unit comprises: a buffer for storing the first data; and a control logic circuit for correcting and storing in the buffer according to the result signal. The first information in the above is obtained to obtain the first valid data mentioned above. 一種電子裝置,包括:一緩衝單元;一快閃記憶體,用以儲存複數筆資料;一記憶體控制器,用以依序輸出未經過錯誤檢查與校正之上述複數筆資料;一錯誤檢查與校正電路,係用以對上述複數筆資料進行錯誤檢查與校正,以便產生對應之複數個結果信號;以及一仲裁單元,用以將上述記憶體控制器所輸出之上述複數筆資料依序傳輸至上述緩衝單元,並且於接收至上述複數個結果信號中之一者時,中斷目前之資料傳輸,將所接收到之上述結果信號傳輸至上述緩衝單元中;其中上述緩衝單元係根據上述結果信號,校正上述複數筆資料中對應之一者,以便作為一有效資料。 An electronic device comprising: a buffer unit; a flash memory for storing a plurality of data; a memory controller for sequentially outputting the plurality of data without error checking and correction; an error check and a correction circuit for performing error checking and correction on the plurality of pieces of data to generate a corresponding plurality of result signals; and an arbitration unit for sequentially transmitting the plurality of pieces of data output by the memory controller to And the buffer unit, when receiving one of the plurality of result signals, interrupting the current data transmission, and transmitting the received result signal to the buffer unit; wherein the buffer unit is based on the result signal, Correct one of the above plurality of data to be used as a valid material. 如申請專利範圍第6項所述之電子裝置,更包括一介面單元,用以讀取出上述緩衝單元中之上述有效資 料,並傳送至另一電子裝置。 The electronic device of claim 6, further comprising an interface unit for reading the above-mentioned effective resources in the buffer unit And transferred to another electronic device. 一種資料傳輸方法,包括:將一第一資料寫入一緩衝單元的同時,對上述第一資料進行一錯誤檢查與校正,以便產生一結果信號;以及藉由上述結果信號校正上述第一資料,作為一第一有效資料。 A data transmission method includes: performing a error check and correction on the first data to generate a result signal while writing a first data to a buffer unit; and correcting the first data by using the result signal, As a first valid material. 如申請專利範圍第8項所述之資料傳輸方法,更包括將上述緩衝單元中之上述第一有效資料傳送至一電子裝置中。 The data transmission method of claim 8, further comprising transmitting the first valid data in the buffer unit to an electronic device. 如申請專利範圍第8項所述之資料傳輸方法,更包括:接收一第二資料;以及若同時接收到上述第二資料以及上述結果信號,則輸出上述第二資料與上述結果信號之一者至上述緩衝單元。 The data transmission method of claim 8, further comprising: receiving a second data; and if the second data and the result signal are simultaneously received, outputting the second data and one of the result signals To the above buffer unit. 如申請專利範圍第10項所述之資料傳輸方法,更包括于接收到上述結果信號時,暫停傳輸上述第二資料至上述緩衝單元。 The data transmission method of claim 10, further comprising, when receiving the result signal, suspending transmission of the second data to the buffer unit. 一種資料傳輸方法,包括:接收複數筆資料;將上述複數筆資料依序輸出至一緩衝單元的同時,依序對上述複數筆資料進行錯誤檢查與校正,以便產生對應之複數個結果信號;於接收到上述複數個結果信號中之一者時,中斷目前之資料傳輸,並將所接收到之上述結果信號傳輸 至上述緩衝單元中;以及根據所接收到之上述結果信號,校正上述複數筆資料中對應之一者,以便作為一有效資料。 A data transmission method includes: receiving a plurality of data; sequentially outputting the plurality of data to a buffer unit, and sequentially performing error checking and correction on the plurality of data to generate a corresponding plurality of result signals; Receiving one of the plurality of result signals, interrupting the current data transmission, and transmitting the received result signal And to the buffer unit; and correcting one of the plurality of pieces of data according to the received result signal to serve as a valid data. 如申請專利範圍第12項所述之資料傳輸方法,更包括將上述緩衝單元中之上述有效資料傳送至一電子裝置中。The data transmission method of claim 12, further comprising transmitting the valid data in the buffer unit to an electronic device.
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