TWI400712B - Read and write method of flash memory information - Google Patents
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本發明係為提供一種快閃記憶體資訊的讀寫方法,尤指快閃記憶體可藉由外部之主機端或外部之記憶體來讀取一新的快閃記憶體資訊,並透過快閃記憶體內之控制器來將該新的快閃記憶體資訊寫入快閃記憶體之特定位址,因此若快閃記憶體資訊有錯誤或毀壞情況時,該快閃記憶體將可以捨棄快閃記憶體內預設之出廠資料,並透過讀取快閃記憶體內新的快閃記憶體資訊的方法,以讓快閃記憶體依舊可以使用。The invention provides a method for reading and writing information of flash memory, in particular, the flash memory can read a new flash memory information through an external host or external memory, and flash through the flash. The controller in the memory writes the new flash memory information to a specific address of the flash memory, so if the flash memory information is wrong or destroyed, the flash memory can discard the flash The preset factory data in the memory, and the way to read the new flash memory information in the flash memory, so that the flash memory can still be used.
按,目前快閃記憶體科技快速成長,近年來業者不斷開發更大容量之快閃記憶體,如MP3播放器、個人數位助理、數位相機或數位攝影機等多媒體裝置及手機等通訊裝置幾乎皆設有記憶卡,另外,現今市面上一般之影音播放裝置的本體內至少設立有控制晶片及快閃記憶體於其內,且其中該快閃記憶體可為應用於數位影音解碼及錄音上之使用,並用以將電腦之影音資料供使用者下載,且亦可由影音播放裝置進行播放數位音樂使用,另外,市面上亦有一種資料儲存裝置內單純利用快閃記憶體使用之產品,此種產品僅提供消費者增加除電腦外之資料記憶使用,且亦可隨意插拔於電腦上進行讀取或存取資料使用,基於上述快閃記憶體之便利性及流通性,因此自從快閃記憶體問世已來即受到廣大消費者的青睞,而成為一種幾乎 不可或缺的使用工具。According to the current rapid development of flash memory technology, in recent years, operators have been developing more and more flash memory, such as MP3 players, personal digital assistants, digital cameras or digital cameras, and other multimedia devices and mobile phones. There is a memory card. In addition, at present, at least a control chip and a flash memory are disposed in the body of the general audio and video playback device in the market, and the flash memory can be used for digital video decoding and recording. And used to download audio and video data from the computer for users to download, and can also be used by audio and video playback devices to play digital music. In addition, there is also a product in the data storage device that uses flash memory only. Providing consumers with increased use of data memory other than computers, and also freely plugging and unplugging them on a computer for reading or accessing data. Based on the convenience and liquidity of the above-mentioned flash memory, since the flash memory is available It has been favored by consumers and has become an almost Indispensable use of tools.
但是上述快閃記憶體之應用則因不同廠商或是需求,則需利用不同型式、不同尺寸規格的記憶卡來滿足消費者多樣化的需求;然而快閃記憶體於出廠時皆會有如記憶體區塊大小、容量、晶片號碼、裝置碼及製造商代碼等出廠預設值,因此一般程式韌體工程師必須根據此一資訊做為判斷該記憶體是屬於何種類的快閃記憶體,再者,快閃記憶體之控制程式必須根據上述之快閃記憶體容量或區塊大小等資訊做為讀寫快閃記憶體之判斷依據,然而當此一資訊誤判或無法讀取時,將會造成此快閃記憶體無法繼續使用,因此該快閃記憶體資訊對程式韌體工程師及快閃記憶體製造廠商而言是非常重要的。However, the application of the above-mentioned flash memory requires different types and sizes of memory cards to meet the diverse needs of consumers due to different manufacturers or needs; however, flash memory is like a memory when shipped from the factory. The factory default values such as block size, capacity, chip number, device code, and manufacturer code, so the general program firmware engineer must use this information as a type of flash memory to determine which memory the memory belongs to. The control program of the flash memory must be based on the above-mentioned information such as the flash memory capacity or the block size as the basis for reading and writing the flash memory. However, when this information is misjudged or cannot be read, it will cause This flash memory cannot be used anymore, so this flash memory information is very important for programmer firmware and flash memory manufacturers.
而以快閃記憶體管理程式而言,一般程式的起始就是利用如READ ID之指令由快閃記憶體中讀取此一出廠資訊,當此快閃記憶體的識別碼與控制器內預設值不符時,則此控制器將無法對此快閃記憶體做正確的存取動作,且由於快閃記憶體推陳出新的速度太快,為了避免一直更改控制器內的韌體程式來配合市面上不斷生產之更大容量快閃記憶體則是製造業者所需面對的課題。In the case of the flash memory management program, the general program starts by reading the factory information from the flash memory by using a command such as a READ ID, when the identification code of the flash memory and the controller are pre-processed. If the value does not match, the controller will not be able to make correct access to the flash memory, and because the flash memory is new, the speed is too fast, in order to avoid changing the firmware in the controller to match the market. The larger capacity flash memory that is continuously produced is a problem that manufacturers need to face.
緣此,上述習用技術之不足,便為從事此行業者所亟欲改善之課題,而有待相關業者作進一步改良與創新設計之必要。Therefore, the above-mentioned deficiencies in the conventional technology are necessary for those who are engaged in this industry to be improved, and it is necessary for the relevant industry to make further improvements and innovative designs.
今,發明人有鑑於上述快閃記憶體控制器內的快閃記 憶體資訊的缺失與不足,故發明人利用此行業之多年研究發明經驗,經不斷改良與實驗,終於發明出此種新的快閃記憶體資訊的讀寫方法。Now, the inventor has in view of the flash memory in the above flash memory controller. The lack of information and lack of information, so the inventors have used this industry's years of research and invention experience, through continuous improvement and experimentation, finally invented this new method of reading and writing flash memory information.
本發明之主要目的乃在於藉由外部之主機端或外部之記憶體來讀取一新的快閃記憶體資訊,並寫入快閃記憶體之快閃記憶體模組之特定位址,因此若快閃記憶體資訊無法辨識時,快閃記憶體將可以捨棄快閃記憶體內預設之出廠資料,所以該快閃記憶體依舊可以使用,也藉此增加快閃記憶體生產良率。The main purpose of the present invention is to read a new flash memory information by using an external host or external memory and write the specific address of the flash memory module of the flash memory. If the flash memory information is not recognized, the flash memory will discard the default factory data in the flash memory, so the flash memory can still be used, which also increases the flash memory production yield.
另,本發明之次要目的乃在於當原本出廠時快閃記憶體所預設之快閃記憶體資訊需更新時,則可以利用外部之資源來更新該快閃記憶體資訊,藉由該方法將可解決快閃記憶體控制器提供廠商,不需因應快閃記憶體推陳出新的速度而相對必須推出不同的韌體控制器,因此將可節省廠商的開發成本以及對該晶片管理的難度之功效者。In addition, the secondary purpose of the present invention is that when the flash memory information preset by the flash memory is updated, the external memory resource can be used to update the flash memory information by using the method. It will solve the problem of the flash memory controller provider, and it is necessary to introduce different firmware controllers in response to the new speed of the flash memory, thus saving the development cost of the manufacturer and the difficulty of managing the wafer. By.
為達成上述目的及構造,並為使 審查委員能對於本發明之目的及功效有更進一步之瞭解,故本發明所採用之技術手段,茲繪圖就本發明之較佳實施例詳加說明如下,俾利完全瞭解。In order to achieve the above object and structure, and to enable the reviewing committee to have a better understanding of the purpose and function of the present invention, the technical means adopted by the present invention will be described in detail below with reference to preferred embodiments of the present invention. Philip fully understands.
請參閱第一圖所示,係為本發明較佳實施例之系統方塊圖,由圖中所示可清楚看出,本發明之快閃記憶體資訊的讀寫方法所運用之快閃記憶體係包括有主機端傳輸介面11、控制器12及快閃記憶體模組13,其中故就本案 之主要結構特徵詳述如后,其中:該主機端傳輸介面11係主要為將快閃記憶體1之資料與外部之主機端進行資料傳輸。Referring to the first embodiment, which is a block diagram of a system according to a preferred embodiment of the present invention, it can be clearly seen from the figure that the flash memory system used in the method for reading and writing flash memory information of the present invention is clear. The host side transmission interface 11, the controller 12 and the flash memory module 13 are included, The main structural features are as follows. The host side transmission interface 11 mainly performs data transmission between the data of the flash memory 1 and the external host.
該控制器12係與主機端傳輸介面11呈一電性相連,且該控制器12係為控制快閃記憶體1讀取/寫入動作之控制器。The controller 12 is electrically connected to the host-side transmission interface 11, and the controller 12 is a controller that controls the read/write operation of the flash memory 1.
該快閃記憶體模組13係與控制器12呈一電性相連,且該快閃記憶體模組13係為一種有記憶功能的積體電路,再者,該快閃記憶體模組13係可由一個或一個以上之快閃記憶體組成。The flash memory module 13 is electrically connected to the controller 12, and the flash memory module 13 is an integrated circuit having a memory function. Furthermore, the flash memory module 13 is further provided. It can consist of one or more flash memories.
請參閱第二圖所示,係為本發明另一較佳實施例之系統方塊圖,由圖中可知此另一較佳實施例與第一圖之實施例之不同處係為,此另一實施例係設置有一電子式可抹除可程式化唯讀記憶體14(EEPROM),其中就本實施例之特徵說明如下:該電子式可抹除可程式化唯讀記憶體14係與控制器12呈一電性相連,該電子式可抹除可程式化唯讀記憶體14係為具有非揮發性記憶體的優點,並同時具備揮發性記憶體的優點可重複讀寫、讀寫速度快及集積度佳之特性。Referring to the second embodiment, which is a block diagram of a system according to another preferred embodiment of the present invention, it can be seen that the difference between the other preferred embodiment and the embodiment of the first embodiment is that the other The embodiment is provided with an electronic erasable programmable read only memory 14 (EEPROM), wherein the features of the embodiment are as follows: the electronic erasable programmable read only memory 14 system and controller 12 is electrically connected, the electronic erasable programmable read-only memory 14 has the advantages of non-volatile memory, and has the advantages of volatile memory, repeatable reading and writing, fast reading and writing speed And the characteristics of good accumulation.
然而為了避免上述所揭露之快閃記憶體1於讀取時受限於預寫入該控制器12內之快閃記憶體資訊,係利用本發明之快閃記憶體資訊的讀寫方法來將快閃記憶體1於生產時重新寫入一新的快閃記憶體資訊(ID),或是快 閃記憶體1之控制器12無法讀取快閃記憶體資訊時將可運用此方法進行更新,是以,該快閃記憶體1係以下列步驟進行更新:(101)判斷快閃記憶體1係為一新的快閃記憶體1,且該新的快閃記憶體資訊並未儲存於控制器12內或快閃記憶體1之控制器12無法讀取快閃記憶體資訊,進行(102);(102)由預設主機端內讀取新的快閃記憶體資訊,進行(103);(103)將此新的快閃記憶體資訊藉由控制器12寫入快閃記憶體1內之快閃記憶體模組13的特定位址。However, in order to avoid that the flash memory 1 disclosed above is limited to the flash memory information pre-written in the controller 12 during reading, the flash memory information reading and writing method of the present invention is utilized. Flash memory 1 rewrites a new flash memory information (ID) during production, or fast When the controller 12 of the flash memory 1 cannot read the flash memory information, the method can be updated by using this method. Therefore, the flash memory 1 is updated by the following steps: (101) Determining the flash memory 1 It is a new flash memory 1, and the new flash memory information is not stored in the controller 12 or the controller 12 of the flash memory 1 cannot read the flash memory information (102). (102) reading new flash memory information from the preset host terminal, performing (103); (103) writing the new flash memory information to the flash memory 1 by the controller 12 The specific address of the flash memory module 13 within.
而上述透過主機端來更新快閃記憶體的方法將可為透過內建或外掛之程式將快閃記憶體資訊進行更新,然而,待上述快閃記憶體1將新的快閃記憶體資訊寫入快閃記憶體模組13內,則該快閃記憶體1於使用時係以下列步驟進行讀取或使用:(201)讀取快閃記憶體1內預設之快閃記憶體資訊,進行(202);(202)將該預設之快閃記憶體資訊與快閃記憶體1內之控制器12之快閃記憶體資訊進行比對,若比對吻合,進行(204);(203)控制器12至快閃記憶體1內之快閃記憶 體模組13中新的特定位址讀取新的快閃記憶體資訊,進行(204);(204)進行資料之存取。The method of updating the flash memory through the host terminal may update the flash memory information through the built-in or plug-in program. However, the flash memory 1 writes the new flash memory information. When the flash memory module 13 is inserted into the flash memory module 13, the flash memory 1 is read or used in the following steps: (201) reading the flash memory information preset in the flash memory 1 Performing (202); (202) comparing the preset flash memory information with the flash memory information of the controller 12 in the flash memory 1, and if the comparison is matched, performing (204); 203) Flash memory in controller 12 to flash memory 1 The new specific address in the body module 13 reads the new flash memory information, and performs (204); (204) accessing the data.
然而,除了藉由上述步驟(102)可由預設主機端內讀取新的快閃記憶體資訊外,尚可由外部之電子式可抹除可程式化唯讀記憶體14、外部之快閃記憶體或外部之控制器進行讀取,故舉凡可達成前述利用外部資源來更新快閃記憶體資訊之形式皆應受本創作所涵蓋,此種簡易修飾及等效結構變化,均應同理包含於本創作之專利範圍內,合予陳明,再者,上述之主機端傳輸介面11可為USB、1394或SATA之串列信號,或是如IDE、PCMCIA、PCI EXPRESS或ATA等之並列信號,且上述之快閃記憶體1可為隨身碟、SD記憶卡、MMC記憶卡、SATA記憶體硬碟或PCI EXPRESS等形式之記憶卡,此種簡易修飾及等效結構變化,亦均應同理包含於本創作之專利範圍內。However, in addition to the new flash memory information can be read from the preset host by the above step (102), the external electronic erasable programmable read-only memory 14 and the external flash memory can be used. The body or external controller reads, so the form that uses the external resources to update the flash memory information should be covered by this creation. Such simple modification and equivalent structural changes should be included in the same reason. In the scope of this patent, the combination of Chen Ming, in addition, the host-side transmission interface 11 can be a serial signal of USB, 1394 or SATA, or a parallel signal such as IDE, PCMCIA, PCI Express or ATA. The above flash memory 1 can be a memory card in the form of a flash drive, an SD memory card, an MMC memory card, a SATA memory hard disk or a PCI EXPRESS, and such a simple modification and an equivalent structural change are also required. It is included in the scope of this creation patent.
再者,請參閱第五、六及七圖所示,係為本發明之快閃記憶體資訊的讀寫方法所用之相關電路圖,而其中該控制器12晶片係為由群聯(PHISON)所提供之PS2134晶片。Furthermore, please refer to the fifth, sixth and seventh diagrams, which are related circuit diagrams for reading and writing the flash memory information of the present invention, wherein the controller 12 chip is connected by the group (PHISON). PS2134 wafers are provided.
是以,本發明之快閃記憶體資訊的讀寫方法與習用技術相較下則具有下列優點:Therefore, the method for reading and writing the flash memory information of the present invention has the following advantages as compared with the conventional technology:
(一)本發明透過外部之主機端或外部之記憶體來讀取一新的快閃記憶體資訊,並寫入快閃記憶體1之快 閃記憶體模組13之特定位址,因此若快閃記憶體資訊有錯誤或毀壞之情況時,快閃記憶體將可以捨棄快閃記憶體內預設之出廠資料,並藉由讀取快閃記憶體模組13內新的快閃記憶體資訊,以讓快閃記憶體1依舊可以使用,也藉此增加快閃記憶體生產良率。(1) The present invention reads a new flash memory information through an external host or external memory and writes the flash memory 1 fast. The specific address of the flash memory module 13, so if the flash memory information is wrong or corrupted, the flash memory can discard the default factory data in the flash memory and flash by reading. The new flash memory information in the memory module 13 allows the flash memory 1 to be used, thereby increasing the yield of the flash memory.
(二)由於一般快閃記憶係將先行讀取原先快閃記憶體內出廠預設值,如果微控制器可以正確無誤讀取此一資訊,則韌體程式依舊照原本設計讀取並判斷快閃記憶體的種類及大小,然而,若此出廠資訊與微控器內預設值不符時,再可由外部進行更新該快閃記憶體資訊,因此可確保新舊間的快閃記憶體之相容性。(2) Since the general flash memory system will read the factory default value of the original flash memory first, if the microcontroller can read this information correctly, the firmware program still reads and judges the flash according to the original design. The type and size of the memory. However, if the factory information does not match the default value in the microcontroller, the flash memory information can be updated externally, thus ensuring the compatibility of the flash memory between the old and new. Sex.
(三)當原本出廠預設之快閃記憶體資訊有壞損或需更新時,則可以利用外部之資源來更新該快閃記憶體資訊,藉由該方法將可解決快閃記憶體控制器提供廠商,不需因應快閃記憶體推陳出新的速度而相對必須推出不同的韌體控制器,因此將可節省廠商的開發成本以及對該晶片管理的難度。(3) When the original flash memory information of the factory default is damaged or needs to be updated, the external memory resource may be used to update the flash memory information, and the flash memory controller can be solved by the method. Vendors are not required to launch new firmware controllers in response to flash memory speeds, which will save manufacturers' development costs and the difficulty of managing the chips.
惟,以上所揭露者,僅是本發明之較佳實施例而已,自不能以此而侷限本發明之專利範圍,因此,舉凡運用本發明之專利範圍所做之均等變化與修飾,仍應包含於本發明所涵蓋之專利範圍內。However, the above disclosure is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, and therefore, the equivalent changes and modifications made by the scope of the patent application of the present invention should still be included. Within the scope of the patents covered by the present invention.
綜上所述,本發明之快閃記憶體資訊的讀寫方法,確實能達到其功效及目的,故本發明誠為一實用性優異之發明,為符合發明專利之申請要件,誠符合產業利用性、新 穎性及進步性,爰依法提出申請,盼 審委早日賜准本案,以保障發明人之辛苦發明,倘若 鈞局審委有任何稽疑,請不吝來函指示,發明人定當竭力配合,實感公便。In summary, the method for reading and writing flash memory information of the present invention can indeed achieve its efficacy and purpose, and therefore the invention is an invention with excellent practicability, and is in conformity with the application requirements of the invention patent, and is in line with industrial utilization. Sex, new Ying Ying and progress, 提出 apply in accordance with the law, I hope that the trial committee will grant this case as soon as possible to protect the inventor's hard work. If there is any doubt in the ruling board, please do not hesitate to give instructions, the inventor will try his best to cooperate, really feel public Will.
1‧‧‧快閃記憶體1‧‧‧flash memory
11‧‧‧主機端傳輸介面11‧‧‧ Host-side transmission interface
12‧‧‧控制器12‧‧‧ Controller
13‧‧‧快閃記憶體模組13‧‧‧Flash Memory Module
14‧‧‧電子式可抹除可程式化唯讀記憶體14‧‧‧Electronic erasable programmable read-only memory
第一圖 係為本發明較佳實施例之系統方塊圖。The first figure is a block diagram of a system in accordance with a preferred embodiment of the present invention.
第二圖 係為本發明另一較佳實施例之系統方塊圖。The second figure is a system block diagram of another preferred embodiment of the present invention.
第三圖 係為本發明較佳實施例之快閃記憶體資訊更新步驟。The third figure is a flash memory information update step of the preferred embodiment of the present invention.
第四圖 係為本發明較佳實施例之快閃記憶體資訊讀取步驟。The fourth figure is a flash memory information reading step of the preferred embodiment of the present invention.
第五圖 係為本發明較佳實施例之快閃記憶體控制器相關電路圖。Figure 5 is a circuit diagram of a flash memory controller in accordance with a preferred embodiment of the present invention.
第六圖 係為本發明較佳實施例之快閃記憶體模組相關電路圖。Figure 6 is a circuit diagram of a flash memory module in accordance with a preferred embodiment of the present invention.
第七圖 係為本發明較佳實施例之快閃記憶體傳輸介面相關電路圖。Figure 7 is a circuit diagram of a flash memory transmission interface in accordance with a preferred embodiment of the present invention.
Claims (8)
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TW95148855A TWI400712B (en) | 2006-12-25 | 2006-12-25 | Read and write method of flash memory information |
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TW95148855A TWI400712B (en) | 2006-12-25 | 2006-12-25 | Read and write method of flash memory information |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US6754765B1 (en) * | 2001-05-14 | 2004-06-22 | Integrated Memory Logic, Inc. | Flash memory controller with updateable microcode |
US20050172065A1 (en) * | 2004-01-30 | 2005-08-04 | Micron Technology, Inc. | Data move method and apparatus |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6754765B1 (en) * | 2001-05-14 | 2004-06-22 | Integrated Memory Logic, Inc. | Flash memory controller with updateable microcode |
US20050172065A1 (en) * | 2004-01-30 | 2005-08-04 | Micron Technology, Inc. | Data move method and apparatus |
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