TWI399452B - Production method of sulfurized metal nanowires and their arrays - Google Patents

Description

Metal sulfide nanowire and manufacturing method thereof

The present invention relates to a method for producing a nanowire, and particularly to a method for producing a metal sulfide nanowire and an array thereof.

According to the early development of Biosensor, the main component is the current-type or potential-type conduction element combined with immobilized enzymes or whole bacteria. Most of the measured pollutants are concentrated in biomedical carbohydrates (such as glucose). , lactose) and biochemical oxygen demand (BOD). The main difficulties include: excessive oxidation potential during operation, interference with substances in the oxidizing environment, resulting in noise generation, long detection time, too high detection limit, and no detection for low concentration pollutants. The face is too narrow. With the rapid development of micro-precision electronics and motor technology, electronic conduction components have gradually developed towards nano-ization, and many biosensing sensors with high sensitivity and selectivity have been developed and applied in various fields. At present, most of the carbon nanotubes (CNT) are used as field effect transistors, but they also have the disadvantages of complicated process, high preparation temperature and high cost.

In addition, a commonly used fluorescent sensing method uses a specific wavelength and concentrated energy beam (such as a laser) to excite the fluorescent light that is in contact with the substance to be tested, and by reading the fluorescent intensity to obtain the concentration of the test substance. . Compared with the nano particles currently used for bio-detection, it can be fabricated and synthesized through various methods, including electrochemical methods, laser shedding, photochemical methods, sonochemical methods and electrodeposition in porous membranes. Wait. However, these methods have certain disadvantages, such as: difficulty in positioning, weak signals, and the like.

In addition, the conventional gas sensor (Gas Sensor) is roughly divided into the following types, a catalytic combustion type gas sensor, a semiconductor adsorption type gas sensor, an electrochemical gas sensor, and three types of gas sensing. The gas leakage reaction must be detected at a high temperature, or the reaction resistivity of the gas leak detected by the device is relatively low, so that it is often necessary for the sensor to detect the gas leakage after some time, and thus Cause unpredictable damage. In summary, if you want to detect toxic gases in the room temperature environment, there are still some bottlenecks to be overcome. However, in the academic research, most of the carbon nanotubes (CNTs) are used as field-effect transistor gas. Sensor, but it has the disadvantages of complicated process steps, high cost and slow recovery time (heating to 200 ° C, about 1 hour to recover), in addition, some people have invented a gas sensing using nanowires. "a method and a gas sensor detecting gas containing NO _x or zinc indium zinc oxide mixed oxides", a system which is the ROC Patent application No. 941225679 Patent Nos, whose principal lines spaced on a substrate Providing a two-metal electrode, and the surface of the substrate is further provided with a semiconductor film connected to the metal electrodes, the semiconductor film comprising a mixed oxide of zinc oxide or indium zinc, and the zinc oxide or indium zinc mixed oxidation The system forms a gas sensing surface in the form of a nanowire, and in the above invention, the disclosed nanowire system contains a mixed oxide of zinc oxide or indium zinc, focusing on the component applied to gas sensing, rather than Rice noodle Preparation of the present invention the non-identical.

In summary, it is known that both the conventional biosensor and the gas sensor have many disadvantages, and thus there is room for improvement.

The object of the present invention is to provide a method for manufacturing a sulfide metal nanowire and an array thereof, which can manufacture a nanowire which can be applied to various sensors or biochemical detection, thereby improving the performance of the sensor and simultaneously Reduce its manufacturing costs.

The method for manufacturing a sulfide metal nanowire and an array thereof can be deposited by electrochemical deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), or the like. A metal combines sulfur to form a metal sulfide metal line and an array thereof.

The sulfide metal nanowire of the present invention mainly comprises a body, and the system is a linear body, and is deposited by a metal-bonded sulfur element.

Thereby, the diameter and length of the metal nanowire can be controlled by the growth template to accurately define the position of the nanowire, while self-aligning to form the drain and the source, and the silicon metal nanowire array can be used to prepare As a sensor, and because the sulfide metal nanowire array is easy to be connected with the substance to be tested, it can be used as a channel, and because the sulfide metal nanowire array has a very small wire diameter, it has gas sensing The extremely large reaction surface area can effectively improve the sensitivity and reaction time of the substance to be tested and the gas sensing. Moreover, because of its simple manufacture and low cost, the cost and man-hour required for manufacturing can be greatly reduced.

First, please refer to the first figure, which is a block diagram of a manufacturing process according to a first preferred embodiment of the present invention. The steps include a template generation step 1, an electrode growth step 2, and a nanowire array growth step 3. Vulcanization step 4.

Please also refer to the second to fifth figures, and the detailed process of performing the above steps is:

In the template forming step 1, first, a substrate 10 is pretreated, and the general pretreatment mainly includes three parts of polishing, degreasing, and pickling, since the above-mentioned techniques are not known in the art. The material of the substrate 10 may be aluminum (Al), titanium (Ti), magnesium (Mg), zirconium (Zr), aluminum-magnesium alloy (Al-Mg alloy), aluminum-copper alloy (Al-Cu alloy). ), one of Al-Si alloy, Al-Mn alloy, Al-Mg-Si alloy, and Al-Zn-Mg alloy In the preferred embodiment of the present invention, the material of the substrate 10 is aluminum (Al), and the substrate 10 is further subjected to secondary anodization, and the substrate is subjected to the first anodizing treatment. 10 surface will react to form an aluminum oxide layer 11, and further, the aluminum oxide layer 11 formed by the first anodizing reaction is acid-etched by the electrolyte, and a plurality of grooves 12 are left on the surface of the substrate 10, and The substrate 10 is subjected to a second anodization treatment, and the grooves 12 are reacted to form a growth template (ie, an anodic aluminum oxide template) 13 . The long template 13 has a plurality of upright ordered nano-scale tubes 131 which are perpendicular to the surface of the substrate 10 and parallel to each other, and a barrier is formed between the growth template 13 and the substrate 10. Layer 14.

Referring to the sixth and seventh figures, in the electrode growth step 2, the substrate 10 and the barrier layer 14 are respectively removed by a chemical etching solution, and the chemical etching solution can be further removed. The tubes 131 are enlarged, and a conductive electrode 20 is plated on the side of the growth template 10.

Referring to FIG. 8 again, in the step 3 of the nanowire array extension, a metal is deposited along the tube 131 of the growth template 13 by electroplating with a plating solution, which is preferred in the present invention. In the embodiment, the metal is selected from the group consisting of zinc (Zn), chromium (Cd), tin (Sn), indium (In), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), titanium. One of (Ti), silver (Ag), aluminum (Al), and lead (Pb), and at the same time, the metal is deposited in the tubes 131 and forms a metal nanowire array 30, and the metal nanowire The array 30 is further composed of a plurality of metal nanowires 31, respectively.

Referring to the ninth and tenth figures, in the vulcanization step 4, the metal nanowire array 30 is simultaneously placed in a sulfur gas environment formed by sulfur element and a high temperature reaction. In a preferred embodiment of the invention, the sulfur element is selected from the group consisting of sulfur (Sulfide, S), sodium thiosulfate (Sodium thiosulfate, Na ₂ S ₂ O ₃ ‧5H ₂ O), sodium sulfide (Sodium sulfide, Na _{2 )} S), hydrogen sulfide (H ₂ S) and thiourea (Thidiazuron), and the optimum reaction conditions for vulcanization have a reaction temperature range of 150-800 ° C and a reaction time range of 0.1-12 Hours, again, the metal nanowire array 30 and the sulfur gas generated by the sulfur element can be combined by high temperature vulcanization, and form a metal sulfide nanowire array 40 (as shown in FIG. 11). In addition, the growth template 13 is removed by a chemical solution so that the sulfide metal nanowire array 40 can be arranged upright and orderly on the conductive electrode 20, and the sulfide metal nanowire array 40 is composed of a plurality of sulfide metal naphthalenes. The rice noodle 41 is composed.

Referring to FIG. 11 again, the SEM cross-section of the expanded metal nanowire array of the present invention is filled in a growth template, and the growth template 13 and the sulfide metal nanowire array 40 are deposited. In the case of distribution, the sulfide metal nanowires 41 are erected in the growth template 13 in an orderly arrangement.

Please refer to the twelfth figure, which is a ratio diagram of the EDS composition of the expanded metal nanowire array of the present invention filled in the growth template. It can be clearly seen from the figure that the sulfide metal nanowire array 40 grows in the growth. The ratio of the components in the template 13, wherein the proportion of the constituents of the sulfide metal nanowire 41 contains sulfur (S), and the aluminum (Al) and oxygen (O) are affected by the growth of the growth template 13, indium (In ) is the composition of the deposited metal.

Referring to FIG. 13 , a block diagram of a manufacturing process according to a second preferred embodiment of the present invention includes a template generating step 5, a nanowire array length forming step 6, and a vulcanization step 7.

Please refer to the fourteenth to seventeenth drawings at the same time, and the detailed process of the steps of the manufacturing process of the second preferred embodiment is as follows, wherein a part of the same structure as the above embodiment is used.

In the template generating step 5, the main difference between the second embodiment and the above embodiment is that a substrate 50 is grown into a conductive adhesive layer 60, and then grown on the conductive adhesive layer 60 to form a substrate 10. The material of the substrate 50 may be a hard material or a soft material, and the hard material includes bismuth (Si) and glass, and the soft material includes a thin plastic sheet, a metal foil, and a flexible substrate. The conductive adhesive layer 60 is selected from the group consisting of tantalum (Ta), titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO). Zinc-doped tin oxide (ZTO), antimony-doped tin oxide (ATO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), fluorine-doped One of the materials of the zinc oxide (FZO), and in the preferred embodiment of the present invention, the material of the substrate 50 is bismuth (Si), and the material of the conductive adhesive layer 60 is titanium nitride (TiN). The material of 10 is aluminum (Al), and the substrate 10 is also subjected to pre-treatment and secondary anodization, and the surface of the substrate 10 reacts to form the first anode treatment. The aluminum layer 11 is further etched with the electrolyte to etch the aluminum oxide layer 11 formed by the first anodizing reaction, and the surface of the substrate 10 is left behind and the grooves 12 are left. Performing a second anodic treatment, and using the grooves 12 as a whole to form the growth template 13 , the growth template 13 having a plurality of upright ordered nano-scale tubes 131 perpendicular to the substrate The surface of the 50 is parallel to each other, and the barrier layer 14 is formed between the growth template 13 and the conductive adhesive layer 60. Further, the barrier layer 14 is acid-etched and removed by a chemical etching solution. Pipe 131 (as shown in Figure 18).

Referring to FIG. 18 again, in the nanowire array length forming step 6, the plating solution is used to deposit the metal along the pipe 131 of the growth template 13 by electrochemical deposition, and the metal system and the first The preferred embodiment is the same, and at the same time, the metal is deposited in the tubes 131 and the metal nanowire array 30 is formed, and the metal nanowire array 30 is further composed of the metal nanowires 31, respectively.

Referring to the nineteenth and twentieth diagrams, in the vulcanization step 7, the metal nanowire array 30 and the sulfur element are simultaneously placed in the sulfur gas environment generated by the sulfur element, and the temperature is high. Reaction, and the sulfur element is the same as the first preferred embodiment described above, and the reaction temperature range of the optimum reaction conditions for vulcanization is also 150-800 ° C and the reaction time range is 0.1-12 hours. After the nanowire array 30 and the sulfur gas generated by the sulfur element are vulcanized at a high temperature, they may be combined to form the sulfide metal nanowire array 40, and the sulfide metal nanowire array 40 is composed of the sulfide metal. The nanowires 41 are formed. Further, the growth template 13 is removed by a chemical solution so that the sulfide metal nanowire arrays 40 can be arranged in an upright order on the conductive adhesive layer 60.

Please also refer to FIG. 21, which is a SEM cross-sectional view of a vulcanized nanowire and an array thereof grown on a rigid substrate according to a second preferred embodiment of the present invention, and it can be seen from the figure that the substrate 50 is deposited. There is a conductive adhesive layer 60 on which the metal sulfide nanowires 41 are deposited in an upright order, and the metal sulfide wires 41 further constitute the metal sulfide nanowire array 40.

In addition, in the above deposited metal sulfide nanowire array 40, sodium thiosulfate (Sodium thiosulfate, Na ₂ S ₂ O ₃ ‧5H ₂ O), sodium sulfide (Sodium sulfide, Na ₂ S), and sulfur may also be used. One of the materials of the urine (Thidiazuron) is combined with the chloride, sulfuric acid and nitrate of the metal to form a sulfur-containing plating solution, and is directly electroplated to form the sulfide metal nanowire array 40.

Referring to FIG. 22, which is a schematic diagram of a manufacturing process according to a third preferred embodiment of the present invention, the third preferred embodiment of the present invention is different from the above embodiment in that the third preferred embodiment is For example, the sulfide metal nanowire array 40 is formed by chemical vapor deposition (CVD) deposition, and the growth step is mainly based on a furnace tube 70 side to place a particle (powder) metal on the oxidation. The aluminum crucible 80 is located in the high temperature region of the furnace tube 70, and the metal is selected from the group consisting of zinc (Zn), chromium (Cd), tin (Sn), indium (In), and iron. One of (Fe), cobalt (Co), nickel (Ni), copper (Cu), titanium (Ti), silver (Ag), aluminum (Al), and lead (Pb), and in the furnace tube The substrate 50 is placed on the other side, and the substrate 50 is located in the low temperature region of the furnace tube 70, and a conductive adhesive layer 60 and a catalyst layer 90 are sequentially deposited on the substrate 50. The conductive adhesive layer 60 is selected. From tantalum (Ta), titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), zinc-doped tin oxide ( ZTO), antimony-doped tin oxide (ATO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), and fluorine-doped zinc oxide (FZO), and the catalyst layer 90 The film may be in the form of a film or a particle, and the material thereof is selected from the group consisting of platinum (Pt), gold (Au), silver (Ag), iron (Fe), cobalt (Co), and nickel (Ni). Therefore, the catalyst layer 90 can be used to lower the process temperature, and at the same time, the furnace tube 70 is vacuumed to about 10 ^-5 Torr by a mechanical pump, and an argon gas (Ar) is introduced to make The metal nanowire array 30 can be formed on the catalyst layer 90, and the metal nanowire array 30 can be subjected to a vulcanization reaction by further introducing sulfur gas generated by sulfur element, wherein the metal nanowire array 30 can be Forming the vulcanized nanowire array 40 (as shown in FIG. 23) by a high temperature reaction in combination with sulfur gas generated by sulfur element, and in the third preferred embodiment of the present invention, the metal nanowire array 30 The optimum reaction conditions for vulcanization have a reaction temperature range of 150-1100 ° C and a reaction time of 0.1-10 hours. In addition, the sulfur element and the metal may be directly separated or ground. Powdered or combined into an alloy, placed on the alumina crucible 80, and directly obtained the sulfide metal nanowire array 40; in addition, in the process of growing the sulfide metal nanowire array 40, it can also be directly accessed An organometallic gas source material is used to replace the above-mentioned particle (powder) metal to grow the sulfide metal nanowire array 40, and the organometallic gas source material is selected from diethyl zinc (DEZn), dimethyl One of zinc (DMZn), dimethyl cadmium (DMCd), trimethyltin (TMSn), and trimethyl indium (TMIn).

FIG. 24 is a schematic diagram of a manufacturing process according to a fourth preferred embodiment of the present invention. The fourth preferred embodiment of the present invention is different from the above embodiment in that the fourth preferred embodiment is The sulfide metal nanowire array 40 is grown by physical vapor deposition (PVD), and the growth step is mainly performed by placing the substrate 50 and a target at a relative position in a reaction chamber 100 ( The conductive adhesive layer 60 and the catalyst layer 90 may be deposited on the substrate 50, and the material of the conductive adhesive layer 60 and the catalyst layer 90 are the same as described above, and at the same time, the fourth aspect of the present invention. In the preferred embodiment, the material of the target is selected from the group consisting of zinc (Zn), chromium (Cd), tin (Sn), indium (In), iron (Fe), cobalt (Co), nickel (Ni), and copper ( Cu, titanium (Ti), silver (Ag), aluminum (Al), and lead (Pb), one of the metals and the sulfur flakes, and the metal and sulfur flakes selected for the molar ratio are ground to a finer and mixed state by a ball mill. a uniform powder or a sulfide metal powder, and then using a pressure target machine to press and sinter the powder to form the target T, and again Argon gas (Ar) is introduced, and the degree of vacuum in the reaction chamber 100 is adjusted to about 0.1 to 50 mTorr, and the target T is struck by using an argon atom (Ar) to be formed on the catalyst layer 90. The metal nanowire array 30, and further, the metal nanowire array 30 is further vulcanized by a high temperature reaction and sulfur gas generated by sulfur element, thereby obtaining the sulfide metal nanowire array 40 (such as the twentieth At the same time, in the fourth preferred embodiment of the present invention, the reaction temperature of the metal nanowire array 30 is subjected to an optimum reaction temperature range of 150-850 ° C, and the reaction time range is 0.1- 10 hours.

Still referring to the twenty-fifth figure, the vulcanized metal nanowire of the present invention comprises:

A body (ie, the above-mentioned sulfide metal nanowire) 41 is a linear body, and the body 41 is formed by depositing a metal-bonded sulfur element selected from the group consisting of zinc (Zn) and chromium (Cd). ), tin (Sn), indium (In), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), titanium (Ti), silver (Ag), aluminum (Al) and lead (Pb) One of the materials, the sulfur element is selected from the group consisting of sulfur (Sulfide, S), sodium thiosulfate (Sodium thiosulfate, Na ₂ S ₂ O ₃ ‧5H ₂ O), sodium sulfide (Sodium sulfide, Na ₂ S), Hydrogen Sulfide (H ₂ S) and Thidiazuron.

Hereafter, the features of the present invention and its achievable efficacy are stated as follows:

1. The sulfide metal nanowire of the present invention and its array can control the wire diameter and length by growing a template, accurately define the position of the sulfide metal nanowire, and self-align to form a drain and a source, and have no metal pollution. The advantages of simple manufacturing and low cost.

2. The present invention can fix the metal sulfide nanowire and its array connection between the source and the drain of the transistor, and the sulfide metal nanowire can be connected to the substance to be tested, so that it can be used as a channel. At the same time, the surface charge change of the sulfide metal nanowire is very sensitive, and the frame can constitute a high-sensitivity field effect transistor biosensor, and the reliability of the test is improved.

3. The invention can prepare the combined nanoparticle into a gas sensor, and the wire diameter of the sulfide metal nanowire array is extremely fine, has a great reaction surface area for gas sensing, and improves the adsorption capacity of the gas. At the same time, its structure can improve the sensitivity and reaction time of gas sensing, and the volume of the gas sensor can be miniaturized.

In summary, the present invention has excellent advancement and practicability in similar products, and at the same time, the technical materials of such structures are frequently investigated at home and abroad, and the same structure is not found in the literature. The invention already has the invention patent requirements, and the application is filed according to law.

However, the above-mentioned ones are merely preferred embodiments of the present invention, and the equivalent structural changes of the present invention and the scope of the claims are intended to be included in the scope of the present invention.

1. . . Template generation step

2. . . Electrode growth step

3. . . Nano line array grows into steps

4. . . Vulcanization step

5. . . Template generation step

6. . . Nano line array grows into steps

7. . . Vulcanization step

10. . . Substrate

11. . . Alumina layer

12. . . Groove

13. . . Growth template

131. . . pipeline

14. . . Barrier layer

20. . . Conductive electrode

30. . . Metal nanowire array

31. . . Metal nanowire

40. . . Sulfurized metal nanowire array

41. . . Sulfide metal nanowire

50. . . Substrate

60. . . Conductive adhesive layer

70. . . Furnace tube

80. . . Alumina

90. . . Catalyst layer

100. . . Reaction chamber

T. . . Target

The first figure is a block diagram of a manufacturing process of a first preferred embodiment of the present invention.

The second to tenth views are respectively schematic views of the manufacturing process of the first preferred embodiment of the present invention.

An eleventh drawing is an SEM cross-sectional view of a vulcanized metal nanowire of the present invention and an array thereof filled in a growth template.

Fig. 12 is a view showing the ratio of the EDS composition of the vulcanized metal nanowire and the array thereof filled in the growth template.

Figure 13 is a block diagram showing the manufacturing flow of the second preferred embodiment of the present invention.

The fourteenth to twentieth drawings are respectively schematic views showing the manufacturing process of the second preferred embodiment of the present invention.

Figure 21 is a SEM cross-sectional view showing a sintered metal nanowire of the second preferred embodiment of the present invention and an array thereof grown on a rigid substrate.

Figure 22 is a schematic view showing the manufacturing process of the third preferred embodiment of the present invention.

The twenty-third figure is an SEM image of a sulfide metal nanowire grown by chemical vapor deposition and an array thereof.

A twenty-fourth embodiment is a schematic view showing a manufacturing process of a fourth preferred embodiment of the present invention.

The twenty-fifth figure is an SEM image of a sulfided metal nanowire grown by physical vapor deposition and an array thereof.

Claims (22)

A method for manufacturing a sulfide metal nanowire and an array thereof, wherein a metal is deposited in a growth template by an electrochemical deposition method, and the growth template has a plurality of nanometer-scale pipes, and at the same time, The element reacts, and a metal sulfide nanowire is formed in each of the pipes, and the vulcanized metal nanowires jointly define the sulfide metal nanowire array; wherein the substrate is first grown into a conductive Adhesive layer, and then growing into a substrate on the conductive adhesive layer, and the substrate is subjected to secondary anodization to form the growth template, and the growth template has a plurality of nano-scale pipes, the pipes Straight to the surface of the conductive adhesive layer, and at the same time, a barrier layer is further formed between the growth template and the conductive adhesive layer, and a chemical etching solution is further used to expand the pipeline and remove the barrier layer, thereby making it A metal nanowire array can be deposited along the pipelines, and further, the metal nanowire array is reacted with sulfur element to obtain the sulfide metal nanowire array. The method for producing a metal sulfide nanowire according to claim 1, wherein the material of the substrate is a hard material. The method for producing a metal sulfide nanowire according to claim 2, wherein the substrate is selected from the group consisting of bismuth (Si) and glass (Glass). The method for producing a metal sulfide nanowire according to claim 1, wherein the material of the substrate is a soft material. The method for producing a metal sulfide nanowire according to claim 4, wherein the substrate is selected from the group consisting of a thin plastic sheet, a metal foil, and a bendable substrate. The method for producing a metal sulfide nanowire according to claim 1, wherein the substrate is selected from the group consisting of aluminum (Al), titanium (Ti), magnesium (Mg), and zirconium (Zr). One of the materials. Manufacture of metal sulfide wires and arrays thereof according to item 1 of the patent application scope The method, wherein the substrate is selected from the group consisting of an aluminum-magnesium alloy (Al-Mg alloy), an aluminum-copper alloy (Al-Cu alloy), an aluminum-bismuth alloy (Al-Si alloy), and an aluminum-manganese alloy (Al-Mn alloy). , Al-Mg-Si alloy and one of the alloy materials of Al-Zn-Mg alloy. The method for producing a metal sulfide nanowire according to claim 1, wherein the conductive adhesive layer is selected from the group consisting of tantalum (Ta) and titanium (Ti). The method for producing a metal sulfide nanowire according to claim 1, wherein the conductive adhesive layer is selected from the group consisting of titanium nitride (TiN) and tantalum nitride (TaN). The method for producing a sulfided metal nanowire according to claim 1, wherein the conductive adhesive layer is selected from the group consisting of tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), Zinc-doped tin oxide (ZTO), antimony-doped tin oxide (ATO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), and fluorine-doped zinc oxide (FZO) One of the materials. A method for manufacturing a sulfide metal nanowire and an array thereof, wherein a metal and a sulfur element are collectively deposited on a substrate by chemical vapor deposition (CVD), and the substrate is formed on the substrate The metal sulfide nanowire and the array thereof; wherein the substrate is further provided with a conductive adhesive layer and a catalyst layer, and is further deposited on the catalyst layer to form the sulfide metal nanowire and the array thereof. The method for producing a sulfided metal nanowire according to claim 11 or an array thereof, wherein the conductive adhesive layer is selected from the group consisting of tantalum (Ta) and titanium (Ti). The method for producing a sulfided metal nanowire according to claim 11 or an array thereof, wherein the conductive adhesive layer is selected from the group consisting of titanium nitride (TiN) and tantalum nitride (TaN). The method for producing a sulfided metal nanowire according to claim 11, wherein the conductive adhesive layer is selected from the group consisting of tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), Zinc-doped tin oxide (ZTO), antimony-doped tin oxide (ATO), zinc-doped oxidation One of indium (IZO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), and fluorine-doped zinc oxide (FZO). The method for producing a sulfide metal nanowire according to claim 11, wherein the material of the catalyst layer is selected from the group consisting of platinum (Pt), gold (Au), silver (Ag), and iron. One of (Fe), cobalt (Co), and nickel (Ni). The method for producing a sulfided metal nanowire according to claim 11 and an array thereof, wherein the metal system is in the form of an organic metal gas source material. The method for producing a sulfided metal nanowire according to claim 16 or an array thereof, wherein the organometallic gas source material is selected from the group consisting of diethyl zinc (DEZn) and dimethyl zinc (DMZn). One of dimethyl cadmium (DMCd), trimethyltin (TMSn), and trimethyl indium (TMIn). A method for manufacturing a sulfide metal nanowire and an array thereof, wherein a metal and a sulfur element are collectively deposited on a substrate by physical vapor deposition (PVD), and the sulfide is formed on the substrate The metal nanowire and the array thereof; wherein the substrate is further provided with a conductive adhesive layer and a catalyst layer, and is further deposited on the catalyst layer to form the sulfide metal nanowire and the array thereof. The method for producing a metal sulfide nanowire according to claim 18, wherein the conductive adhesive layer is selected from the group consisting of tantalum (Ta) and titanium (Ti). The method for producing a sulfided metal nanowire according to claim 18, wherein the conductive adhesive layer is selected from the group consisting of titanium nitride (TiN) and tantalum nitride (TaN). The method for producing a sulfided metal nanowire according to claim 18, wherein the conductive adhesive layer is selected from the group consisting of tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), Zinc-doped tin oxide (ZTO), antimony-doped tin oxide (ATO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), and fluorine-doped zinc oxide (FZO) One of the materials. The method for producing a sulfided metal nanowire according to claim 18, wherein the material of the catalyst layer is selected from the group consisting of platinum (Pt), gold (Au), silver (Ag), and iron. One of (Fe), cobalt (Co), and nickel (Ni).