TWI397922B - Hardware silicon chip structure of the buffer - Google Patents

Hardware silicon chip structure of the buffer Download PDF

Info

Publication number
TWI397922B
TWI397922B TW98115107A TW98115107A TWI397922B TW I397922 B TWI397922 B TW I397922B TW 98115107 A TW98115107 A TW 98115107A TW 98115107 A TW98115107 A TW 98115107A TW I397922 B TWI397922 B TW I397922B
Authority
TW
Taiwan
Prior art keywords
memory
data
address
signal
write
Prior art date
Application number
TW98115107A
Other languages
Chinese (zh)
Other versions
TW201040980A (en
Original Assignee
Sunplus Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunplus Technology Co Ltd filed Critical Sunplus Technology Co Ltd
Priority to TW98115107A priority Critical patent/TWI397922B/en
Publication of TW201040980A publication Critical patent/TW201040980A/en
Application granted granted Critical
Publication of TWI397922B publication Critical patent/TWI397922B/en

Links

Description

硬體矽智產之緩衝器結構Buffer structure of hardware

本發明係關於整合單晶片系統之技術領域,尤指一種硬體矽智產之緩衝器結構。The present invention relates to the technical field of integrating a single wafer system, and more particularly to a buffer structure of a hardware.

在進行積體電路設計或是硬體矽智產(Silicon Intellectual Property;SIP)設計時,常會於電路中內建緩衝器(Buffer),以供硬體矽智產即時運算或讀寫資料操作時使用。而依照各種應用的不同,硬體矽智產中的緩衝器組成的架構也會有些不同。優良的緩衝器架構可以讓硬體矽智產的使用富有彈性且使用簡單,而且軟體的撰寫亦不會因此而造成限制,先進的緩衝器架構甚至可以讓硬體面積可以更為縮小,以節省成本。When performing integrated circuit design or hardware design (Silicon Intellectual Property (SIP) design), a buffer (Buffer) is built in the circuit for real-time operation or reading and writing data operation. use. Depending on the application, the architecture of the buffers in the hardware will be somewhat different. The excellent buffer architecture allows the use of hardware and software to be flexible and easy to use, and the writing of software is not limited. The advanced buffer architecture can even reduce the hardware area to save. cost.

於硬體矽智產設計中,「Source+Destination→Destination」等類似的運算係常見於硬體矽智產運用緩衝器方法。其中,「Source+Destination→Destination」係表示由一記憶體中讀出一來源資料、並由相同的記憶體或是其他記憶體讀出一目標資料,將該來源資料及該目標資料執行加法運算後,進而將結果寫回至原來儲存該目標資料的記憶體中,並以加法運算結果覆蓋該目標資料。此種運算非僅限定於加法運算,其他如減法運算、移位運算、或(OR)運算、及(AND)運算、互斥或(XOR)等運算亦常使用於硬體矽智產設計中。In the design of hardware and technology, "Source+Destination→Destination" and other similar computing systems are commonly used in the hardware method. Wherein, "Source+Destination→Destination" means that a source data is read from a memory, and a target data is read from the same memory or other memory, and the source data and the target data are added. Then, the result is written back to the memory in which the target data is originally stored, and the target data is overwritten by the addition result. Such operations are not limited to addition operations, and other operations such as subtraction, shift operations, or (OR) operations, and (AND) operations, mutual exclusion, or (XOR) are often used in hardware design. .

在設計「Source+Destination→Destination」運算相關硬體時,習知技術係以兩個分開的緩衝器各存放來源資料及目標資料,待資料經運算後再存入目標資料的緩衝器中。圖1係習知技術中緩衝器使用示意圖。如圖所示,緩衝器110是由兩個64x32位元的靜態隨機存取記憶體(SRAM)組成。當該緩衝器110應用在色彩處理時,色彩處理之硬體矽智產的內部運算及儲存的資料係使用顏色格式為Alpha(A)、Red(R)、Green(G)、Blue(B)各用8個位元代表。也就是每一個像素用一組的ARGB來表示,而實際應用的平台色彩表示方式也是如此,故該緩衝器110的架構可以在存取時剛好配合ARGB8888的平台使用。When designing the "Source+Destination→Destination" operation related hardware, the conventional technology stores the source data and the target data in two separate buffers, and the data is stored in the buffer of the target data after being calculated. Figure 1 is a schematic diagram of the use of a buffer in the prior art. As shown, buffer 110 is comprised of two 64x32 bit static random access memory (SRAM). When the buffer 110 is applied to color processing, the internal processing and storage data of the hardware processing of the color processing uses the color formats of Alpha (A), Red (R), Green (G), and Blue (B). Each is represented by 8 bits. That is, each pixel is represented by a set of ARGB, and the platform color representation of the actual application is also the same, so the architecture of the buffer 110 can be used just in conjunction with the ARGB8888 platform.

若在不同的平台上使用此ARGB8888儲存格式,則靜態隨機存取記憶體的架構就必須要做變更,以符合使用上的需求。If this ARGB8888 storage format is used on different platforms, the architecture of the SRAM must be changed to meet the requirements of the application.

另一種習知平台色彩表示方式為RGB565格式。在系統記憶體中,每一個像素用16位元表示,而每一個字組(word)係為32位元且為一個最佳的存取單位。亦即,每一個字組可儲存有2個像素的資料。當系統每一個時序周期(Clock Cycle)讀取一個字組,但卻必須寫入兩個像素的值進入硬體矽智產的緩衝器時,圖1中硬體矽智產的緩衝器之架構就需調整成圖2的架構。如圖2所示,來源緩衝器與目標緩衝器各被拆成兩塊不同的靜態隨機存取記憶體,以達到同時存取兩個像素的目的。當系統讀取一個字組時,該硬體矽智產經過簡單的電路轉換,將讀取到的值拆開成兩個像素值,並讓奇數及偶數的像素分別存入不同的靜態隨機存取記憶體中,用來達到同時存取兩個像素的功能。Another conventional platform color representation is the RGB565 format. In system memory, each pixel is represented by 16 bits, and each word is 32 bits and is an optimal access unit. That is, each block can store data of 2 pixels. When the system reads a block every Clock Cycle, but must write the value of two pixels into the buffer of the hardware, the architecture of the buffer of the hardware in Figure 1 It needs to be adjusted to the architecture of Figure 2. As shown in FIG. 2, the source buffer and the target buffer are each split into two different static random access memories to achieve the purpose of simultaneously accessing two pixels. When the system reads a block, the hardware is transformed by a simple circuit, the read value is split into two pixel values, and the odd and even pixels are stored in different static random stores. In the memory, it is used to achieve the function of accessing two pixels at the same time.

圖2的緩衝器架構雖然解決了同時存取兩個像素的問題,但實體上的記憶體卻必須分成四塊,造成儲存空間上的浪費,並增加一些額外的控制電路,而增加許多硬體成本。由此可知,習知硬體矽智產之緩衝器結構仍有改善之空間。Although the buffer architecture of Figure 2 solves the problem of simultaneously accessing two pixels, the physical memory must be divided into four blocks, causing waste of storage space, adding some additional control circuits, and adding many hardware. cost. It can be seen from this that there is still room for improvement in the buffer structure of the conventional hardware.

本發明之目的係在提供一種硬體矽智產之緩衝器結構,以避免習知技術所產生儲存空間浪費的問題。SUMMARY OF THE INVENTION It is an object of the present invention to provide a bumper structure for a hard body to avoid the waste of storage space created by the prior art.

本發明之另一目的係在提供一種硬體矽智產之緩衝器結構,以降低整體硬體成本。Another object of the present invention is to provide a bumper structure for a hard body to reduce overall hardware cost.

依據本發明之一特色,本發明係提出一種硬體矽智產之緩衝器結構,其包含一第一記憶體、一第二記憶體及一寫入電路。該第一記憶體具有一2N個m位元的記憶空間,該第一記憶體分為一第一區域及一第二區域,該第一區域係由位置為第0個m位元至第(N-1)個m位元的記憶空間所組成,該第二區域係由位置為第N個m位元至第(2N-1)個m位元的記憶空間所組成,當中,N、m為正整數。該第二記憶體具有一2N個m位元的記憶空間,該第一記憶體分為一第一區域及一第二區域,該第一區域係由位置為第0個m位元至第(N-1)個m位元的記憶空間所組成,該第二區域係由位置為第N個m位元至第(2N-1)個m位元的記憶空間所組成。該寫入電路連接至該第一記憶體及該第二記憶體,以對該第一記憶體及該第二記憶體執行寫入動作。其中,該寫入電路將一來源資料之偶數位址資料寫至該第二記憶體的第二區域,該寫入電路將該來源資料之奇數位址資料寫至該第一記憶體的第二區域,該寫入電路將一目標資料之偶數位址資料寫至該第一記憶體的第一區域,該寫入電路將該目標資料之奇數位址資料寫至該第二記憶體的第一區域。According to a feature of the present invention, the present invention provides a buffer structure for a hardware, which includes a first memory, a second memory, and a write circuit. The first memory has a memory space of 2N m bits, and the first memory is divided into a first area and a second area, and the first area is from the 0th mth to the ( N-1) m-bit memory space, the second region is composed of a memory space from the Nth mth to the (2N-1) m-bit, where N, m Is a positive integer. The second memory has a memory space of 2N m bits, and the first memory is divided into a first area and a second area, and the first area is from the 0th mth to the A memory space of N-1) m bits, the second region being composed of a memory space of a position from the Nth mth to the (2N-1) mth. The write circuit is connected to the first memory and the second memory to perform a write operation on the first memory and the second memory. The writing circuit writes the even-numbered address data of the source data to the second area of the second memory, and the writing circuit writes the odd-numbered address data of the source data to the second memory of the first memory. a write circuit that writes an even address data of a target data to a first area of the first memory, the write circuit writes the odd address data of the target data to the first of the second memory region.

圖3係本發明硬體矽智產之緩衝器結構的方塊圖,其具有一第一記憶體310、一第二記憶體320及一寫入電路330。3 is a block diagram of a buffer structure of the hardware of the present invention, having a first memory 310, a second memory 320, and a write circuit 330.

該第一記憶體310具有一2N個m位元的記憶空間,該第一記憶體分為一第一區域及一第二區域,該第一區域係由位置為第0個m位元至第(N-1)個m位元的記憶空間所組成,該第二區域係由位置為第N個m位元至第(2N-1)個m位元的記憶空間所組成,當中,N、m為正整數。The first memory 310 has a memory space of 2N m bits, and the first memory is divided into a first area and a second area, and the first area is from the 0th mth position to the first (N-1) m-bit memory space, the second region is composed of a memory space from the Nth mth to the (2N-1) mth bits, wherein N, m is a positive integer.

該第二記憶體320具有一2N個m位元的記憶空間,該第一記憶體分為一第一區域及一第二區域,該第一區域係由位置為第0個m位元至第(N-1)個m位元的記憶空間所組成,該第二區域係由位置為第N個m位元至第(2N-1)個m位元的記憶空間所組成。The second memory 320 has a memory space of 2N m bits, and the first memory is divided into a first area and a second area, and the first area is from the 0th mth to the (N-1) m-bit memory space, the second region is composed of a memory space of a position from the Nth mth to the (2N-1) mth.

該寫入電路330其連接至該第一記憶體310及該第二記憶體320,以對該第一記憶體310及該第二記憶體320執行寫入動作。The write circuit 330 is connected to the first memory 310 and the second memory 320 to perform a write operation on the first memory 310 and the second memory 320.

圖4係本發明該寫入電路330將資料寫入記憶體的示意圖。該寫入電路330將一來源資料之偶數位址資料(SA0,...,SA62)寫至該第二記憶體320的第二區域。該寫入電路330將該來源資料之奇數位址資料(SA1,...,SA63)寫至該第一記憶體310的第二區域。該寫入電路330將一目標資料之偶數位址資料(DA0,...,DA62)寫至該第一記憶體310的第一區域。該寫入電路330將該目標資料之奇數位址資料(DA1,...,DA63)寫至該第二記憶體320的第一區域。4 is a schematic diagram of the write circuit 330 of the present invention writing data into a memory. The write circuit 330 writes the even address data (SA0, . . . , SA62) of a source of data to the second region of the second memory 320. The write circuit 330 writes the odd address data (SA1, . . . , SA63) of the source material to the second region of the first memory 310. The write circuit 330 writes the even address data (DA0, . . . , DA62) of a target data to the first area of the first memory 310. The write circuit 330 writes the odd address data (DA1, . . . , DA63) of the target data to the first region of the second memory 320.

如圖4所示,該目標資料係分別放置於該第一記憶體310的第一區域及該第二記憶體320的第一區域。而該來源資料的擺放則是將奇數位址資料(奇數像素)擺在該第一記憶體310的第二區域,偶數位址資料(偶數像素)擺放在該第二記憶體320的第二區域。此種擺放方式恰巧的將屬於同一運算的像素擺放在不同的記憶體裡面,讓硬體矽智產在執行運算時也可以每一個週期處理一次的運算及緩衝器的存取,而達到最佳的處理速度。圖4中的DA0像素資料(目標資料)置於該第一記憶體310的第一區域,而SA0像素資料(來源資料)置於該第二記憶體320的第二區域,故可以同時取出做運算。DA1像素資(目標資料)及SA1(來源資料)像素資也是放置於不同的記憶體中。As shown in FIG. 4, the target data is placed in the first area of the first memory 310 and the first area of the second memory 320, respectively. The source data is placed in the second area of the first memory 310 by the odd address data (odd pixels), and the even address data (even pixels) is placed in the second memory 320. Two areas. This kind of placement method happens to place the pixels belonging to the same operation in different memories, so that the hardware can also process the operations and buffer accesses once every cycle during the execution of the operation. The best processing speed. The DA0 pixel data (target data) in FIG. 4 is placed in the first area of the first memory 310, and the SA0 pixel data (source data) is placed in the second area of the second memory 320, so that it can be taken out at the same time. Operation. The DA1 pixel (target data) and SA1 (source data) pixel resources are also placed in different memories.

圖5係本發明記憶體的系統角度之示意圖。亦即,由資料儲存觀點來看該第一記憶體310及該第二記憶體320的架構。如圖5所示,該目標資料係儲存於第一記憶體310的第一區域及該第二記憶體320的第一區域。而該來源資料係儲存於第一記憶體310的第二區域及該第二記憶體320的第二區域。由系統角度觀點而言,該目標資料及來源資料的儲存很單純,其主要是本發明的該寫入電路330會執行位址切換功能,可讓一軟體把硬體矽智產之緩衝器當成只有兩塊分開的記憶體,而該軟體無須特殊處理。圖5中實線框510代表系統看到的目標緩衝器,虛線框520代表來源緩衝器。Figure 5 is a schematic illustration of the system angle of the memory of the present invention. That is, the architecture of the first memory 310 and the second memory 320 is viewed from the viewpoint of data storage. As shown in FIG. 5, the target data is stored in a first area of the first memory 310 and a first area of the second memory 320. The source data is stored in the second area of the first memory 310 and the second area of the second memory 320. From the system point of view, the storage of the target data and the source data is very simple, and the main purpose is that the write circuit 330 of the present invention performs the address switching function, so that a software can treat the buffer of the hardware. There are only two separate memories, and the software does not require special handling. The solid line frame 510 in Figure 5 represents the target buffer seen by the system, and the dashed box 520 represents the source buffer.

圖6係本發明之寫入電路的電路圖。該寫入電路330包含第一及閘至第四及閘610~640及第一多工器至第四多工器650~680。該第一多工器650連接至該第一記憶體310的一輸入匯流排,該第二多工器660連接至該第一記憶體310的一資料匯流排,該第一及閘610連接至該第一記憶體310的一寫入訊號接腳,該第二及閘620連接至該第一記憶體310的一致能訊號接腳。該第三多工器670連接至該第二記憶體320的位址匯流排,該第四多工器680連接至該第二記憶體320的資料匯流排,該第三及閘630連接至該第二記憶體320的一寫入訊號接腳,該第四及閘640連接至該第二記憶體320的一致能訊號接腳。Figure 6 is a circuit diagram of a write circuit of the present invention. The write circuit 330 includes first and fourth to fourth gates 610 to 640 and first to fourth multiplexers 650 to 680. The first multiplexer 650 is connected to an input bus of the first memory 310, and the second multiplexer 660 is connected to a data bus of the first memory 310. The first NAND 610 is connected to A write signal pin of the first memory 310 is connected to the uniform signal pin of the first memory 310. The third multiplexer 670 is connected to the address bus of the second memory 320. The fourth multiplexer 680 is connected to the data bus of the second memory 320. The third NAND 630 is connected to the address bus. A write signal pin of the second memory 320 is connected to the uniform signal pin of the second memory 320.

該第一多工器接650收該來源資料之一奇數位址BufB_Addr_Odd及該目標資料之一偶數位址BufA_Addr_Even,以產生該第一記憶體310的輸入位址訊號,並輸出至該第一記憶體的該輸入匯流排SRAM_0_Addr。該第二多工器660接收該來源資料之一奇數位址資料BufB_Din_Odd及該目標資料之一偶數位址資料BufA_Din_Even,以產生該第一記憶體的輸入資料訊號,並輸出至該第一記憶體的該資料匯流排SRAM_0_Din。The first multiplexer 650 receives an odd address BufB_Addr_Odd of the source data and an even address BufA_Addr_Even of the target data to generate an input address signal of the first memory 310, and outputs the input address signal to the first memory. The input bus of the body SRAM_0_Addr. The second multiplexer 660 receives the odd address data BufB_Din_Odd of the source data and the even address data BufA_Din_Even of the target data to generate an input data signal of the first memory, and outputs the input data signal to the first memory. The data bus is SRAM_0_Din.

該第三多工器接收670該來源資料之一偶數位址BufB_Addr_Even及該目標資料之一奇數位址BufA_Addr_Odd,以產生該第二記憶體的輸入位址訊號,並輸出至該第二記憶體的該輸入匯流排SRAM_1_Addr。該第四多工器680接收該來源資料之一偶數位址資料BufB_Din_Even及該目標資料之一奇數位址資料BufA_Din_Odd,以產生該第二記憶體的輸入資料訊號,並輸出至該第二記憶體的該資料匯流排SRAM_1_Din。The third multiplexer receives 670 an even address of the source data BufB_Addr_Even and an odd address BufA_Addr_Odd of the target data to generate an input address signal of the second memory, and outputs the input address signal to the second memory. The input bus SRAM_1_Addr. The fourth multiplexer 680 receives an even address data BufB_Din_Even of the source data and an odd address data BufA_Din_Odd of the target data to generate an input data signal of the second memory, and outputs the input data signal to the second memory. The data bus SRAM_1_Din.

該第一及閘610接收該來源資料之奇數位址的一寫入訊號BufB_WEn_Odd及該目標資料之偶數位址的一寫入訊號BufA_WEn_Even,以產生該第一記憶體的一寫入訊號,並輸出至該第一記憶體的該寫入訊號接腳SRAM_0_WEn。該第二及閘620接收該來源資料之奇數位址的一致能訊號BufB_CEn_Odd及該目標資料之偶數位址的一致能訊號BufA_CEn_Even,以產生該第一記憶體的一致能訊號,並輸出至該第一記憶體的該致能訊號接腳SRAM_0_CEn。The first gate 610 receives a write signal BufB_WEn_Odd of the odd address of the source data and a write signal BufA_WEn_Even of the even address of the target data to generate a write signal of the first memory, and outputs The write signal pin SRAM_0_WEn to the first memory. The second gate 620 receives the coincidence signal BufB_CEn_Odd of the odd address of the source data and the uniform energy signal BufA_CEn_Even of the even address of the target data to generate the consistent energy signal of the first memory, and outputs the same to the first The enable signal pin of a memory is SRAM_0_CEn.

該第三及閘630接收該來源資料之偶數位址的一寫入訊號BufB_WEn_Even及該目標資料之奇數位址的一寫入訊號BufA_WEn_Odd,以產生該第二記憶體的一寫入訊號,並輸出至該第二記憶體的該寫入訊號接腳SRAM_1_WEn。該第四及閘640接收該來源資料之偶數位址的一致能訊號BufB_CEn_Even及該目標資料之奇數位址的一致能訊號BufA_CEn_Odd,以產生該第二記憶體的一致能訊號,並輸出至該第一記憶體的該致能訊號接腳SRAM_1_CEn。The third gate 630 receives a write signal BufB_WEn_Even of the even address of the source data and a write signal BufA_WEn_Odd of the odd address of the target data to generate a write signal of the second memory, and outputs The write signal pin SRAM_1_WEn to the second memory. The fourth gate 640 receives the uniform energy signal BufB_CEn_Even of the even-numbered address of the source data and the uniform energy signal BufA_CEn_Odd of the odd-numbered address of the target data to generate the consistent energy signal of the second memory, and outputs the same to the first The enable signal pin SRAM_1_CEn of a memory.

藉由本發明之該寫入電路330,以執行位址切換功能,如此該目標資料及來源資料的儲存會變得很單純,而可讓該軟體把硬體矽智產之緩衝器當成只有兩塊分開的記憶體。對該軟體而言,本發明技術係通透(transparent),亦即該軟體無須任何修改即可快速地存取第一記憶體310及第二記憶體320。By the writing circuit 330 of the present invention, the address switching function is performed, so that the storage of the target data and the source data becomes simple, and the software can make the buffer of the hardware and the intellectual property as only two pieces. Separate memory. For the software, the technique of the present invention is transparent, that is, the software can quickly access the first memory 310 and the second memory 320 without any modification.

圖7係習知技術與本發明使用面積之比較圖。如圖2所示,習知技術係使用4個64x32位元的靜態隨機存取記憶體以構成一緩衝器。本發明技術係使用2個128x32位元的靜態隨機存取記憶體以構成一緩衝器。圖7係使用本發明技術的靜態隨機存取記憶體以構成一緩衝器,其在TSMC 0.13微米製程合成出來的結果。由可圖7知,本發明技術的緩衝器結構確實可以節省許多硬體的面積。Figure 7 is a comparison of the prior art and the area of use of the present invention. As shown in FIG. 2, the conventional technique uses four 64x32 bit static random access memories to form a buffer. The technique of the present invention uses two 128x32 bit static random access memories to form a buffer. Figure 7 is a static random access memory using the techniques of the present invention to form a buffer which is synthesized in a TSMC 0.13 micron process. As can be seen from Figure 7, the buffer structure of the present invention can indeed save a lot of hardware area.

本發明的目的為僅使用兩塊獨立的記憶體以構成硬體矽智產之緩衝器。當色彩資料存入緩衝器時,利用本發明之寫入電路330,以特殊的排列方式存入硬體矽智產之緩衝器中,而這種排列方式可以讓資料讀寫時能達到色彩資料應用時的特殊讀寫需求。It is an object of the present invention to use only two separate memories to form a buffer for a hard body. When the color data is stored in the buffer, the write circuit 330 of the present invention is stored in a buffer of the hardware and the like in a special arrangement, and the arrangement can achieve color data when reading and writing data. Special read and write requirements for applications.

由上述說明可知,習知技術為了支援不同平台上不同的色彩格式儲存方式,硬體矽智產之緩衝器的記憶體組成方式改成利用四個記憶體分開來存取,但實際上,硬體矽智產之緩衝器拆成四個記憶體來組成會造成空間的浪費,以及增加存取電路的複雜度。然而,本發明僅使用兩個記憶體的架構為基礎,用簡單的電路將資料用特殊的排練方式放入硬體矽智產之緩衝器內,可以節省硬體的面積以及軟體操作硬體矽智產之緩衝器時的複雜度。It can be seen from the above description that in order to support different color format storage methods on different platforms, the memory composition of the hardware buffer is changed to use four memory to access, but in fact, hard The buffer of the body's intellectual property is split into four memories to form a waste of space and increase the complexity of accessing the circuit. However, the present invention is based on the architecture of only two memories, and uses a simple circuit to put the data into the buffer of the hardware and the special rehearsal, which can save the hardware area and the software operation hardware. The complexity of the buffer of the intellectual property.

上述實施例僅係為了方便說明而舉例而已,本發明所主張之權利範圍自應以申請專利範圍所述為準,而非僅限於上述實施例。The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

110...緩衝器110. . . buffer

310...第一記憶體310. . . First memory

320...第二記憶體320. . . Second memory

330...寫入電路330. . . Write circuit

510...實線框510. . . Solid line frame

520...虛線框520. . . Dotted box

610~640...第一至第四及閘610~640. . . First to fourth gates

650~680...第一至第四多工器650~680. . . First to fourth multiplexers

圖1係習知技術中緩衝器使用示意圖。Figure 1 is a schematic diagram of the use of a buffer in the prior art.

圖2係習知硬體矽智產的緩衝器之架構的示意圖。FIG. 2 is a schematic diagram of the structure of a buffer of a conventional hardware.

圖3係本發明硬體矽智產之緩衝器結構的方塊圖。Fig. 3 is a block diagram showing the structure of the buffer of the hardware of the present invention.

圖4係本發明該寫入電路將資料寫入記憶體的示意圖。4 is a schematic diagram of the write circuit of the present invention writing data into a memory.

圖5係本發明記憶體的系統角度之示意圖。Figure 5 is a schematic illustration of the system angle of the memory of the present invention.

圖6係本發明之寫入電路的電路圖。Figure 6 is a circuit diagram of a write circuit of the present invention.

圖7係習知技術與本發明使用面積之比較圖。Figure 7 is a comparison of the prior art and the area of use of the present invention.

310...第一記憶體310. . . First memory

320...第二記憶體320. . . Second memory

330...寫入電路330. . . Write circuit

Claims (10)

一種硬體矽智產之緩衝器結構,其包含:一第一記憶體,其具有一2N個m位元的記憶空間,該第一記憶體分為一第一區域及一第二區域,該第一區域係由位置為第0個m位元至第(N-1)個m位元的記憶空間所組成,該第二區域係由位置為第N個m位元至第(2N-1)個m位元的記憶空間所組成,當中,N、m為正整數;一第二記憶體,其具有一2N個m位元的記憶空間,該第二記憶體分為一第三區域及一第四區域,該第三區域係由位置為第0個m位元至第(N-1)個m位元的記憶空間所組成,該第四區域係由位置為第N個m位元至第(2N-1)個m位元的記憶空間所組成;以及一寫入電路,連接至該第一記憶體及該第二記憶體,用以對該第一記憶體及該第二記憶體執行寫入動作;其中,該寫入電路將一來源資料之偶數位址資料寫至該第二記憶體的第四區域,該寫入電路將該來源資料之奇數位址資料寫至該第一記憶體的第二區域,該寫入電路將一目標資料之偶數位址資料寫至該第一記憶體的第一區域,該寫入電路將該目標資料之奇數位址資料寫至該第二記憶體的第三區域。A buffer structure of a hardware, comprising: a first memory having a memory space of 2N m bits, the first memory being divided into a first area and a second area, The first region is composed of a memory space ranging from 0th mth to (N-1) mth, and the second region is from the Nth mth to the (2N-1) a m-bit memory space, wherein N and m are positive integers; a second memory having a 2N m-bit memory space, the second memory being divided into a third region and a fourth region, the third region being composed of a memory space from a 0th mth to a (N-1)th mth, the fourth region being the Nth mth position a memory space of (2N-1) m bits; and a write circuit connected to the first memory and the second memory for the first memory and the second memory Performing a write operation; wherein the write circuit writes an even address data of a source data to a fourth region of the second memory, the write circuit singular address of the source data Writing to the second area of the first memory, the writing circuit writes the even address data of a target data to the first area of the first memory, the writing circuit blocks the odd address data of the target data Write to the third area of the second memory. 如申請專利範圍第1項所述之緩衝器結構,其中,該寫入電路包含第一及閘至第四及閘及第一多工器至第四多工器,該第一多工器連接至該第一記憶體的一輸入匯流排,該第二多工器連接至該第一記憶體的一資料匯流排,該第一及閘連接至該第一記憶體的一寫入訊號接腳,該第二及閘連接至該第一記憶體的一致能訊號接腳,該第三多工器連接至該第二記憶體的位址匯流排,該第四多工器連接至該第二記憶體的資料匯流排,該第三及閘連接至該第二記憶體的一寫入訊號接腳,該第四及閘連接至該第二記憶體的一致能訊號接腳。The snubber structure of claim 1, wherein the write circuit comprises a first NAND gate to a fourth gate and a first multiplexer to a fourth multiplexer, the first multiplexer connection An input bus to the first memory, the second multiplexer is connected to a data bus of the first memory, and the first gate is connected to a write signal pin of the first memory The second multiplexer is connected to the consistent signal pin of the first memory, the third multiplexer is connected to the address bus of the second memory, and the fourth multiplexer is connected to the second The data bus of the memory is connected to a write signal pin of the second memory, and the fourth gate is connected to the consistent signal pin of the second memory. 如申請專利範圍第2項所述之緩衝器結構,其中,該第一多工器接收該來源資料之奇數位址及該目標資料之偶數位址,用以產生該第一記憶體的輸入位址訊號,並輸出至該第一記憶體的該輸入匯流排。The buffer structure of claim 2, wherein the first multiplexer receives an odd address of the source data and an even address of the target data to generate an input bit of the first memory. The address signal is output to the input bus of the first memory. 如申請專利範圍第2項所述之緩衝器結構,其中,該第二多工器接收該來源資料之奇數位址資料及該目標資料之偶數位址資料,用以產生該第一記憶體的輸入資料訊號,並輸出至該第一記憶體的該資料匯流排。The buffer structure of claim 2, wherein the second multiplexer receives the odd address data of the source data and the even address data of the target data to generate the first memory. The data signal is input and output to the data bus of the first memory. 如申請專利範圍第2項所述之緩衝器結構,其中,該第三多工器接收該來源資料之偶數位址及該目標資料之奇數位址,用以產生該第二記憶體的輸入位址訊號,並輸出至該第二記憶體的該輸入匯流排。The buffer structure of claim 2, wherein the third multiplexer receives an even address of the source data and an odd address of the target data to generate an input bit of the second memory The address signal is output to the input bus of the second memory. 如申請專利範圍第2項所述之緩衝器結構,其中,該第四多工器接收該來源資料之偶數位址資料及該目標資料之奇數位址資料,用以產生該第二記憶體的輸入資料訊號,並輸出至該第二記憶體的該資料匯流排。The buffer structure of claim 2, wherein the fourth multiplexer receives the even address data of the source data and the odd address data of the target data to generate the second memory. The data signal is input and output to the data bus of the second memory. 如申請專利範圍第2項所述之緩衝器結構,其中,該第一及閘接收該來源資料之奇數位址的一寫入訊號及該目標資料之偶數位址的一寫入訊號,用以產生該第一記憶體的一寫入訊號,並輸出至該第一記憶體的該寫入訊號接腳。The buffer structure of claim 2, wherein the first gate receives a write signal of an odd address of the source data and a write signal of an even address of the target data, Generating a write signal of the first memory and outputting the write signal pin to the first memory. 如申請專利範圍第2項所述之緩衝器結構,其中,該第二及閘接收該來源資料之奇數位址的一致能訊號及該目標資料之偶數位址的一致能訊號,用以產生該第一記憶體的一致能訊號,並輸出至該第一記憶體的該致能訊號接腳。The buffer structure of claim 2, wherein the second gate receives the coincidence signal of the odd address of the source data and the uniform energy signal of the even address of the target data to generate the The uniform energy signal of the first memory is output to the enable signal pin of the first memory. 如申請專利範圍第2項所述之緩衝器結構,其中,該第三及閘接收該來源資料之偶數位址的一寫入訊號及該目標資料之奇數位址的一寫入訊號,用以產生該第二記憶體的一寫入訊號,並輸出至該第二記憶體的該寫入訊號接腳。The buffer structure of claim 2, wherein the third gate receives a write signal of an even address of the source data and a write signal of an odd address of the target data, A write signal of the second memory is generated and output to the write signal pin of the second memory. 如申請專利範圍第2項所述之緩衝器結構,其中,該第四及閘接收該來源資料之偶數位址的一致能訊號及該目標資料之奇數位址的一致能訊號,用以產生該第二記憶體的一致能訊號,並輸出至該第一記憶體的該致能訊號接腳。The buffer structure of claim 2, wherein the fourth gate receives the uniform energy signal of the even address of the source data and the consistent energy signal of the odd address of the target data, to generate the The uniform energy signal of the second memory is output to the enable signal pin of the first memory.
TW98115107A 2009-05-07 2009-05-07 Hardware silicon chip structure of the buffer TWI397922B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98115107A TWI397922B (en) 2009-05-07 2009-05-07 Hardware silicon chip structure of the buffer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW98115107A TWI397922B (en) 2009-05-07 2009-05-07 Hardware silicon chip structure of the buffer

Publications (2)

Publication Number Publication Date
TW201040980A TW201040980A (en) 2010-11-16
TWI397922B true TWI397922B (en) 2013-06-01

Family

ID=44996174

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98115107A TWI397922B (en) 2009-05-07 2009-05-07 Hardware silicon chip structure of the buffer

Country Status (1)

Country Link
TW (1) TWI397922B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126747A1 (en) * 2005-12-02 2007-06-07 Dijia Wu Interleaved video frame buffer structure
CN101221541A (en) * 2007-01-09 2008-07-16 张立军 Programmable communication controller for SOC and its programming model

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126747A1 (en) * 2005-12-02 2007-06-07 Dijia Wu Interleaved video frame buffer structure
CN101221541A (en) * 2007-01-09 2008-07-16 张立军 Programmable communication controller for SOC and its programming model

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Hu, Jingcao et al. ,"System-Level Buffer Allocation for Application-Specific Networks-on-Chip Router Design", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 25 , Issue: 12 ,Dec. 2006. *
Saastamoinen, I. et al., "Buffer implementation for Proteo network-on-chip", 2003. ISCAS '03. Proceedings of the 2003 International Symposium on Circuits and Systems, Vol. 2, 25-28 May 2003. *

Also Published As

Publication number Publication date
TW201040980A (en) 2010-11-16

Similar Documents

Publication Publication Date Title
KR100909805B1 (en) Multiport memory device
JP5261803B2 (en) High-speed fanout system architecture and input / output circuit for non-volatile memory
JPS63276795A (en) Variable length shift register
US7995419B2 (en) Semiconductor memory and memory system
JPH05274864A (en) Semiconductor storage device used exclusively for image
TW201320074A (en) Semiconductor memory device
JPH06131154A (en) Sequential memory and method for inputting and outputting sequential memory and data
TWI397922B (en) Hardware silicon chip structure of the buffer
CN108206034B (en) Method and system for providing a multi-port memory
JPS6128198B2 (en)
US7672177B2 (en) Memory device and method thereof
CN101650967B (en) Buffer structure of hardware silicon intellectual property
JP5499131B2 (en) Dual port memory and method thereof
KR100519877B1 (en) Semiconductor memory device having late write function and data input/output method therefor
JP2009128603A (en) Display driving circuit
US20120140573A1 (en) Semiconductor memory device and method of operating the same
JP2000057777A (en) Synchronous burst semiconductor memory device
JP2004046593A (en) Cache memory and method for controlling it
JP5888177B2 (en) Arithmetic processing device and control method of arithmetic processing device
JPH06124584A (en) Sequential memory and method for sequentially storing of data unit
JP2950427B2 (en) Register bank circuit
KR102591124B1 (en) Semiconductor device
JP2878714B2 (en) Serial access memory
TWI528362B (en) Static random access memory system and operation method thereof
JPH02287855A (en) Bus size converting device