TWI394168B - Memory test method - Google Patents
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本發明涉及一種記憶體的測試方法,尤其是利用具測試功能的內建控制器對記憶體進行測試。The invention relates to a method for testing a memory, in particular to test a memory using a built-in controller with a test function.
快閃記憶體是目前最熱門的儲存媒介,並被廣泛的利用在嵌入式系統上。快閃記憶體是一種固態、不易揮發、可複寫的記憶體,其運作方式就像隨機存取記憶體與硬碟的混合體。就像DRAM,快閃記憶體將資料位元儲存在記憶體單位中,但是當電源關閉後資料仍保留在記憶體上,由於它的高速、持久性以及低電壓需求,快閃記憶體非常適合在許多設備中使用,例如數位相機、行動電話、列印機、掌上型電腦、呼叫器以及錄音機。Flash memory is currently the most popular storage medium and is widely used in embedded systems. Flash memory is a solid, non-volatile, rewritable memory that operates like a mixture of random access memory and hard disk. Just like DRAM, flash memory stores data bits in memory units, but when the power is turned off, the data remains on the memory. Due to its high speed, long-lasting, and low voltage requirements, flash memory is ideal. Used in many devices, such as digital cameras, mobile phones, printers, palmtops, pagers, and tape recorders.
參閱第一圖,習用技術的記憶體測試系統之示意圖。如第一圖所示,記憶體測試系統1包括測試電腦10以及篩選板(Sorting Board)20,其中測試電腦10藉傳輸介面以連接到篩選板20,而傳輸介面可為通用串列匯流排(Universal Serial Bus,USB)介面。篩選板20包括控制器30以及記憶體40,通常控制器30為控制晶片或具控制晶片的控制模組。測試電腦10發出測試指令以及測試資料,由控制器30接收並寫入記憶體40,或由控制器30讀取記憶體40並傳送回測試電腦10,測試電腦10進行資料比對以確認記憶體是否正常,並紀錄測試結果,包括受損區塊的位址以及受損區塊的總數目。Referring to the first figure, a schematic diagram of a conventional memory test system. As shown in the first figure, the memory test system 1 includes a test computer 10 and a sorting board 20, wherein the test computer 10 is connected to the screening board 20 through a transmission interface, and the transmission interface can be a universal serial bus ( Universal Serial Bus, USB) interface. The screening board 20 includes a controller 30 and a memory 40. Typically, the controller 30 is a control chip or a control module having a control chip. The test computer 10 issues a test command and test data, which is received by the controller 30 and written to the memory 40, or the memory 40 is read by the controller 30 and transmitted back to the test computer 10, and the test computer 10 performs data comparison to confirm the memory. It is normal and records the test results, including the address of the damaged block and the total number of damaged blocks.
參閱第二圖,習用技術的記憶體測試之流程圖。如第二圖所示,記憶體的測試由步驟S10開始,接著進入步驟S12。在步驟S12中,測試電腦發出測試指令,進入步驟S14。在步驟S14中,測試電腦產生測試資料並傳送至控制器,進入步驟S16。在步驟S16中,控制器將測試資料寫入記憶體內,進入步驟S18。在步驟S18中,測試電腦發出讀取指令,進入步驟S20。在步驟S20中,控制器讀取記憶體內的儲存資料並傳送給測試電腦,進入步驟S22。在步驟S22中,測試電腦對測試資料與所接收到的儲存資料,進入步驟S24。在步驟S24中,測試電腦紀錄比對結果,進入步驟S26。在步驟S26中,如果完成所有記憶體的測試,則進入步驟S30,結束操作,否則回到步驟14。Referring to the second figure, a flow chart of a memory test of a conventional technique. As shown in the second figure, the test of the memory starts with step S10, and then proceeds to step S12. In step S12, the test computer issues a test command, and proceeds to step S14. In step S14, the test computer generates test data and transmits it to the controller, and proceeds to step S16. In step S16, the controller writes the test data into the memory, and proceeds to step S18. In step S18, the test computer issues a read command, and proceeds to step S20. In step S20, the controller reads the stored data in the memory and transmits it to the test computer, and proceeds to step S22. In step S22, the test computer pairs the test data and the received stored data, and proceeds to step S24. In step S24, the computer record comparison result is tested, and the process proceeds to step S26. In step S26, if the test of all the memories is completed, the process proceeds to step S30, and the operation is ended, otherwise the process returns to step 14.
上述的測試操作在依測試資料的分類中係屬於低階比對方式,非常倚重測試電腦的掃描測試程式以及測試電腦的效率,因為在資料的寫入及讀取時,測試系統對記憶體的存取操作相當頻繁,加上測試資料的產生及讀取記憶體資料後進行資料比對,都需要測試電腦的大量運算處理。因此,業界無不想盡辦法在如何兼顧篩選的正確性及掃描的效率上取得令人滿意的平衡點。The above test operations are classified into low-order comparison methods according to the classification of test data, and rely heavily on the test program of the test computer and the efficiency of the test computer, because the test system is on the memory when writing and reading data. The access operation is quite frequent. In addition to the generation of test data and the comparison of data after reading the memory data, it is necessary to test a large amount of arithmetic processing of the computer. Therefore, the industry does not want to find a satisfactory balance between how to balance the correctness of screening and the efficiency of scanning.
然而,以低階比對方式進行記憶體掃描測試的缺點是,測試電腦的中央處理器會經常處於高度負載的狀態,以及對記憶體的頻繁存取。However, the disadvantage of performing a memory scan test in a low-order alignment mode is that the central processing unit of the test computer is often in a highly loaded state and has frequent access to the memory.
另一類測試方式是高階比對方式,藉由測試電腦將測試檔案透過控制器寫入記憶體內,再從記憶體讀取所儲存 的檔案並與測試檔案進行比對。此種方式係以系統邏輯觀點的方式透過特定檔案的存取來進行記憶體的讀寫測試,將檔案的資料分次並大量寫入記憶體再讀出進行比對,因此可測試出記憶體是否正常,且相對於低階比對方式來說,對記憶體的存取頻率已大幅降低。Another type of test method is the high-order comparison method. The test file is written into the memory through the controller through the test computer, and then stored and stored from the memory. The file is compared with the test file. In this way, the memory is read and written by the access of a specific file in a systematic logical point of view. The data of the file is divided and written into the memory and read and compared for comparison, so that the memory can be tested. Whether it is normal, and the access frequency to the memory has been greatly reduced relative to the low-order comparison method.
然而,高階比對的測試方式完全倚靠測試電腦來進行,因此雖然有利於研發出高效率的測試程式以進行篩選測試,並容易了解比對結果,但卻無法做到低階比對方式確切掌握記憶體區塊狀況的功能。However, the high-order comparison test relies entirely on the test computer, so although it is beneficial to develop a highly efficient test program for screening tests and easy to understand the comparison results, it is impossible to accurately grasp the low-order comparison method. The function of the memory block status.
尤其是近年來,記憶體晶圓的體積日漸縮小,內部電路設計卻日益複雜且要求運作快速,因此記憶體顆粒的穩定度成為半導體產業一大挑戰。若是無法預先了解記憶體的特性,往往導致顆粒品質及可信度的下降。如何以節省時間、降低花費的方式,在一定的準確度下將記憶體顆粒的穩定度篩選出來變成了一個重要的要素。尤其快閃記憶體的大容量、高密度和單位結構的複雜,更造成篩選上的不確定性大幅增加。加上製程技術追求極微小的體積,即使在同一晶圓上的各個單體,不同位置上皆可能出現不同的電氣特性。若是以一視同仁的方式處理,又勢必使得良率大幅下降。Especially in recent years, the volume of memory wafers has been shrinking, internal circuit design has become increasingly complex and requires fast operation, so the stability of memory particles has become a major challenge for the semiconductor industry. If the characteristics of the memory cannot be known in advance, the quality and credibility of the particles are often degraded. How to save the stability of memory particles into an important factor with a certain degree of accuracy in a way that saves time and reduces costs. In particular, the large capacity, high density, and complexity of the unit structure of flash memory have led to a significant increase in the uncertainty of screening. Coupled with the minimal volume of process technology, even in the individual cells on the same wafer, different electrical characteristics may occur at different locations. If it is handled in a non-discriminatory manner, it will inevitably lead to a sharp drop in yield.
因此,需要一種記憶體的測試方法,能更快、更準確,以及更有效的進行記憶體的篩選測試,以符合記憶體測試的需求。Therefore, there is a need for a memory testing method that enables faster, more accurate, and more efficient screening tests of memory to meet the needs of memory testing.
本發明之主要目的在提供一種記憶體的測試方法,係藉自動化比對法的測試流程,針對記憶體,比如快閃記憶體,利用控制器之運算能力,在接到測試電腦所發出的測試指令時,產生亂數資料或特定格式的資料,直接對快閃記憶體進行資料的寫入、讀出以及比對的操作,並將測試結果傳送回測試電腦,藉以大幅減少測試電腦對記憶體的資料輸入及輸出之負載,加快記憶體的測試速度。The main object of the present invention is to provide a method for testing a memory, which is based on a test procedure of an automatic comparison method, and uses a computing power of a controller for a memory, such as a flash memory, to receive a test from a test computer. When the command is generated, the data of the random number or the specific format is generated, the data is written, read, and compared directly to the flash memory, and the test result is transmitted back to the test computer, thereby greatly reducing the test computer to the memory. The load of data input and output speeds up the testing of memory.
本發明之另一目的在提供一種記憶體的測試方法,測試電腦只負責將專屬命令(Proprietary Command)及部分編程後具低階比對功能的資料發送至控制器,再啟動測試流程,控制器自動針對記憶體的所有區塊進行抹除(Erase),接著對每個區塊的所有資料頁(Page)進行資料的寫入,而所寫入的資料便是由控制器透過演算法而產生出來。在讀取每個區塊的所有資料頁之資料以進行比對處理時,控制器透過演算法將讀出的資料跟之前寫入的資料進行比對,藉以判斷該記憶體區塊是否正常。因此,主要的測試工作係由控制器負責,藉以大幅降低傳輸介面的資料負載量,並減輕測試電腦的運算負荷,提升整體的記憶體測試效率。Another object of the present invention is to provide a method for testing a memory. The test computer is only responsible for transmitting a proprietary command (Proprietary Command) and a partially programmed low-order comparison function data to the controller, and then starting the test flow, and the controller Automatically erases all the blocks of the memory (Erase), then writes the data to all the pages of each block, and the written data is generated by the controller through the algorithm. come out. When reading the data of all the data pages of each block for comparison processing, the controller compares the read data with the previously written data through an algorithm to determine whether the memory block is normal. Therefore, the main test work is performed by the controller, which greatly reduces the data load of the transmission interface, reduces the computational load of the test computer, and improves the overall memory test efficiency.
要注意的是,在低階比對的過程中,係透過演算法對不同位址的記憶體使用不同的資料進行寫入、讀出以及比對操作,但本發明並不會使用單調、固定格式的資料來做篩選快閃記憶體的測試,而是使用測試電腦中的篩選程式所提供的比對方式,相對於現有的篩選模式,本發明兼具 了低階比對的掌握度,同時利用了高階比對快速了解比對的狀況。本發明的優點在於利用測試電腦的中央處理器的最小負載、最少的資料傳輸以及較短的測試時間,以完成繁複的測試掃描工作。It should be noted that in the process of low-order alignment, different algorithms are used to write, read, and compare the memory of different addresses through the algorithm, but the present invention does not use monotonous and fixed. The format data is used to filter the flash memory test, but the comparison method provided by the filter program in the test computer is used. Compared with the existing screening mode, the present invention has the same The mastery of low-order alignments, while using high-order comparisons to quickly understand the situation of comparison. The invention has the advantages of using the minimum load of the central processing unit of the test computer, the minimum data transmission and the short test time to complete the complicated test scanning work.
因此,藉由本發明所提供的記憶體的測試方法,可解決上述習知技術的所有缺點。Therefore, all the disadvantages of the above-mentioned prior art can be solved by the test method of the memory provided by the present invention.
以下配合圖式及元件符號對本發明之實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。The embodiments of the present invention will be described in more detail below with reference to the drawings and the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;
參閱第三圖,本發明記憶體的測試方法的示意圖。如第三圖所示,記憶體測試系統2包括測試電腦10以及篩選板50,其中篩選板50包括控制器51以及待測試的記憶體60。控制器51包括介面電路52、微處理器(MCU)54、隨機存取記憶體(RAM)55、唯讀記憶體(ROM)56以及邏輯電路58,介面電路52負責接收測試電腦10的資料或傳送資料至測試電腦10,微處理器54控制整個控制器的處理程序,隨機存取記憶體55提供暫存資料的存取,邏輯電路58主要處理對記憶體60的資料存取,而唯讀記憶體56係用以儲存經測試電腦10編程過的程式碼,包含產生測試資料的演算法、資料的比對處理以及紀錄測試結果。Referring to the third figure, a schematic diagram of a test method for the memory of the present invention. As shown in the third figure, the memory test system 2 includes a test computer 10 and a screening board 50, wherein the screening board 50 includes a controller 51 and a memory 60 to be tested. The controller 51 includes an interface circuit 52, a microprocessor (MCU) 54, a random access memory (RAM) 55, a read only memory (ROM) 56, and a logic circuit 58. The interface circuit 52 is responsible for receiving data of the test computer 10 or The data is transmitted to the test computer 10, the microprocessor 54 controls the processing program of the entire controller, the random access memory 55 provides access to the temporary data, and the logic circuit 58 mainly processes the data access to the memory 60, and only reads The memory 56 is used to store the code programmed by the test computer 10, including the algorithm for generating the test data, the comparison processing of the data, and the record test result.
參閱第四圖,本發明記憶體的測試方法的流程圖。如第四圖所示,本發明的測試方法係由步驟S100開始,並接著進入步驟S110。在步驟S110中,測試電腦準備程式 碼,進入步驟S120。在步驟S120中,測試電腦傳送程式碼與設定資料至控制器,進入步驟S130。在步驟S130中,控制器抹除記憶體的目標區塊,進入步驟S140。在步驟S140中,控制器寫入測試資料至記憶體內,進入步驟S150。在步驟S150中,控制器讀取記憶體內所儲存的儲存資料,進入步驟S160。在步驟S160中,控制器比對測試資料與所接收到的儲存資料,進入步驟S170。在步驟S170中,紀錄比對結果,進入步驟S180。在步驟S180中,如果未完成記憶體的所有區塊的測試,則回到步驟S130,如果完成記憶體的所有區塊的測試,則進入步驟S190。在步驟S190中,產生記憶體測試檔案並傳送至該測試電腦,進入步驟S200。在步驟S200中,結束操作。Referring to the fourth figure, a flow chart of a test method for the memory of the present invention. As shown in the fourth figure, the test method of the present invention starts from step S100, and then proceeds to step S110. In step S110, the test computer preparation program The code proceeds to step S120. In step S120, the test computer transmits the program code and the setting data to the controller, and proceeds to step S130. In step S130, the controller erases the target block of the memory, and proceeds to step S140. In step S140, the controller writes the test data into the memory, and proceeds to step S150. In step S150, the controller reads the stored data stored in the memory, and proceeds to step S160. In step S160, the controller compares the test data with the received stored data, and proceeds to step S170. In step S170, the comparison result is recorded, and the flow proceeds to step S180. In step S180, if the test of all the blocks of the memory is not completed, the process returns to step S130, and if the test of all the blocks of the memory is completed, the process proceeds to step S190. In step S190, a memory test file is generated and transmitted to the test computer, and the process proceeds to step S200. In step S200, the operation is ended.
步驟S110的程式碼可包括產生測試資料的演算法,比如供低階比對方式用的測試資料,同時程式碼可包括供低階比對方式用的比對操作,藉以精確判斷個別區塊是否正常,並因該操作主要係由控制器的邏輯電路負責執行,所以大幅節省測試電腦的工作負載,並加快整體測試速度以及提升測試效率。The code of step S110 may include an algorithm for generating test data, such as test data for low-order comparison mode, and the code may include comparison operation for low-order comparison mode, thereby accurately determining whether individual blocks are used. Normal, and because the operation is mainly performed by the logic circuit of the controller, it greatly saves the workload of the test computer, and speeds up the overall test speed and improves the test efficiency.
步驟S110的程式碼還可包括產生測試資料的演算法,比如高階比對方式所用的測試檔案,用以分次並大量寫入記憶體,以大幅降低對記憶體的存取頻率。The code of step S110 may further include an algorithm for generating test data, such as a test file used in the high-order comparison mode, for dividing and mass writing the memory to greatly reduce the access frequency to the memory.
步驟S190的記憶體測試檔案包括在比對正確時將該區塊標記成良好區塊,並在比對不正確時將該區塊標記成損壞區塊,藉以產生包括顯示出良好區塊與損壞區塊的測試表列。The memory test file of step S190 includes marking the block as a good block when the comparison is correct, and marking the block as a damaged block when the comparison is incorrect, thereby generating including displaying a good block and damage. The test table column for the block.
綜上所述,本發明所提供的方法能大幅降低對記憶體的存取頻率,節省測試電腦的工作負載,並加快整體測試速度以及提升測試效率。In summary, the method provided by the present invention can greatly reduce the frequency of access to the memory, save the workload of the test computer, and speed up the overall test speed and improve the test efficiency.
以上所述者僅為用以解釋本發明之較佳實施例,並非企圖據以對本發明做任何形式上之限制,是以,凡有在相同之發明精神下所作有關本發明之任何修飾或變更,皆仍應包括在本發明意圖保護之範疇。The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention.
1‧‧‧記憶體測試系統1‧‧‧Memory Test System
2‧‧‧記憶體測試系統2‧‧‧Memory Test System
10‧‧‧測試電腦10‧‧‧Test computer
20‧‧‧篩選板20‧‧‧Screening board
30‧‧‧控制器30‧‧‧ Controller
40‧‧‧記憶體40‧‧‧ memory
50‧‧‧篩選板50‧‧‧ screening board
51‧‧‧控制器51‧‧‧ Controller
52‧‧‧介面電路52‧‧‧Interface circuit
54‧‧‧微處理器(MCU)54‧‧‧Microprocessor (MCU)
55‧‧‧隨機存取記憶體(RAM)55‧‧‧ Random Access Memory (RAM)
56‧‧‧唯讀記憶體(ROM)56‧‧‧Read-only memory (ROM)
58‧‧‧邏輯電路58‧‧‧Logical Circuit
60‧‧‧記憶體60‧‧‧ memory
S10~S30‧‧‧步驟S10~S30‧‧‧Steps
S110~S200‧‧‧步驟S110~S200‧‧‧Steps
第一圖為顯示習用技術的記憶體測試系統之示意圖。The first figure is a schematic diagram showing a memory test system of a conventional technique.
第二圖為顯示習用技術的記憶體測試之流程圖。The second figure is a flow chart showing the memory test of the conventional technique.
第三圖為顯示本發明記憶體的測試方法之示意圖。The third figure is a schematic diagram showing a test method of the memory of the present invention.
第四圖為顯示本發明記憶體的測試方法之流程圖。The fourth figure is a flow chart showing a test method of the memory of the present invention.
2‧‧‧記憶體測試系統2‧‧‧Memory Test System
10‧‧‧測試電腦10‧‧‧Test computer
50‧‧‧篩選板50‧‧‧ screening board
51‧‧‧控制器51‧‧‧ Controller
52‧‧‧介面電路52‧‧‧Interface circuit
54‧‧‧微處理器(MCU)54‧‧‧Microprocessor (MCU)
55‧‧‧隨機存取記憶體(RAM)55‧‧‧ Random Access Memory (RAM)
56‧‧‧唯讀記憶體(ROM)56‧‧‧Read-only memory (ROM)
58‧‧‧邏輯電路58‧‧‧Logical Circuit
60‧‧‧記憶體60‧‧‧ memory
Claims (7)
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TW097142032A TWI394168B (en) | 2008-10-31 | 2008-10-31 | Memory test method |
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TW097142032A TWI394168B (en) | 2008-10-31 | 2008-10-31 | Memory test method |
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TW201017674A TW201017674A (en) | 2010-05-01 |
TWI394168B true TWI394168B (en) | 2013-04-21 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW362214B (en) * | 1998-05-02 | 1999-06-21 | Chroma Ate Inc | Generation method of memory test and the circuit thereof |
US5930168A (en) * | 1998-03-20 | 1999-07-27 | Micron Technology, Inc. | Flash memory with adjustable write operation timing |
TW397983B (en) * | 1996-12-18 | 2000-07-11 | Texas Instruments Inc | A memory chip containing a non=volatile memory register for permanently storing information about the quality of the device and test method therefor |
US6591329B1 (en) * | 1997-12-22 | 2003-07-08 | Tdk Corporation | Flash memory system for restoring an internal memory after a reset event |
TW200619923A (en) * | 2004-07-09 | 2006-06-16 | Sandisk Corp | Non-volatile memory system with self test capability |
-
2008
- 2008-10-31 TW TW097142032A patent/TWI394168B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW397983B (en) * | 1996-12-18 | 2000-07-11 | Texas Instruments Inc | A memory chip containing a non=volatile memory register for permanently storing information about the quality of the device and test method therefor |
US6591329B1 (en) * | 1997-12-22 | 2003-07-08 | Tdk Corporation | Flash memory system for restoring an internal memory after a reset event |
US5930168A (en) * | 1998-03-20 | 1999-07-27 | Micron Technology, Inc. | Flash memory with adjustable write operation timing |
TW362214B (en) * | 1998-05-02 | 1999-06-21 | Chroma Ate Inc | Generation method of memory test and the circuit thereof |
TW200619923A (en) * | 2004-07-09 | 2006-06-16 | Sandisk Corp | Non-volatile memory system with self test capability |
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