TWI393131B - Giant magneto-resistance composite material - Google Patents
Giant magneto-resistance composite material Download PDFInfo
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- TWI393131B TWI393131B TW98102403A TW98102403A TWI393131B TW I393131 B TWI393131 B TW I393131B TW 98102403 A TW98102403 A TW 98102403A TW 98102403 A TW98102403 A TW 98102403A TW I393131 B TWI393131 B TW I393131B
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本發明涉及一種巨磁阻複合材料，尤其涉及一種包含有奈米碳管的巨磁阻複合材料。 The invention relates to a giant magnetoresistive composite material, in particular to a giant magnetoresistive composite material comprising a carbon nanotube.
自1988年，巨磁阻(Giant Magneto-Resistance,GMR)效應發現以來(請參見Baibich,M.N.et al.,Phy.Rev.Lett.1988,61.2472)，由於其在電腦硬碟讀取磁頭，磁感測器以及磁記錄方面具有重大的應用價值，巨磁阻材料引起了廣泛關注。巨磁阻材料的研究及應用開發已經成為當前凝聚態物理學和材料科學的熱點之一。巨磁阻效應係指在一定的溫度下，當加在巨磁阻材料上的磁場發生變化時，巨磁阻材料的電阻可產生一個較大的變化。 Since the discovery of the Giant Magneto-Resistance (GMR) effect in 1988 (see Baibich, MNet al., Phy. Rev. Lett. 1988, 61.2472), due to its read head on a computer hard disk, magnetic Sensing devices and magnetic recording have great application value, and giant magnetoresistive materials have attracted wide attention. The research and application development of giant magnetoresistance materials has become one of the hotspots of condensed matter physics and materials science. The giant magnetoresistance effect means that at a certain temperature, when the magnetic field applied to the giant magnetoresistive material changes, the resistance of the giant magnetoresistive material can produce a large change.
傳統的巨磁阻(GMR)材料主要分為兩類：一類係多層膜結構，即磁性金屬膜和非磁性材料膜互相間隔重疊形成。另一種係顆粒膜結構，即磁性金屬顆粒粉分散於非磁性金屬或絕緣體中。巨磁阻材料的磁阻用MR(Magnetoresistance)表示，其定義為MR=(R(H)-R(0))/R(0)，其中R(0)為該巨磁阻材料未加磁場時的電阻，R(H)為該巨磁阻材料加磁場強度為H的磁場時的電阻，MR用來描述巨磁阻材料的巨磁阻特性，MR越大材料的巨磁阻性能越好。 Conventional giant magnetoresistance (GMR) materials are mainly divided into two categories: one is a multilayer film structure, that is, a magnetic metal film and a non-magnetic material film are formed by overlapping each other. The other is a granular film structure in which magnetic metal particle powder is dispersed in a non-magnetic metal or insulator. The magnetoresistance of the giant magnetoresistive material is expressed by MR (Magnetoresistance), which is defined as MR=(R(H)-R(0))/R(0), where R(0) is the giant magnetoresistive material without a magnetic field. The resistance of the time, R (H) is the resistance of the giant magnetoresistive material with a magnetic field with a magnetic field strength of H, and MR is used to describe the giant magnetoresistance of the giant magnetoresistive material. The larger the MR, the better the giant magnetoresistance of the material. .
具有多層膜結構的巨磁阻材料，其可以由適當的鐵磁層(如Fe，Co，Ni)和非鐵磁層(如Cu，Cr，Ar) 相間生長而成。由於磁晶各向異性，這種具有多層膜結構的巨磁阻材料，在外磁場作用下，其沿著易磁化軸和難磁化軸方向的磁阻曲線係不一致的。這種巨磁阻材料的MR在低溫(4.2K，零下269攝氏度)時的值為10%，但實際應用需要巨磁阻材料在常溫下具有大於5%的MR，因此，上述巨磁阻材料只有在低溫下才具有巨磁阻效應，其應用範圍狹窄。而且該巨磁阻材料為金屬製成，其硬度較大，不易剪裁，也限制了其應用。由鐵磁層和非鐵層構成的多層膜結構的巨磁阻材料，可以藉由分子束外延，電沉積法，超高真空蒸發以及磁控濺射等方法製備。上述製備方法，過程較複雜，成本較高。 a giant magnetoresistive material having a multilayer film structure which may be composed of a suitable ferromagnetic layer (such as Fe, Co, Ni) and a non-ferromagnetic layer (such as Cu, Cr, Ar) It grows between phases. Due to the magnetocrystalline anisotropy, the giant magnetoresistive material having a multilayer film structure is inconsistent in the direction of the easy magnetization axis and the hard magnetization axis under the action of an external magnetic field. The MR of this giant magnetoresistive material is 10% at low temperature (4.2K, minus 269 degrees Celsius), but the practical application requires the giant magnetoresistive material to have MR greater than 5% at normal temperature. Therefore, the above giant magnetoresistive material It has a giant magnetoresistance effect only at low temperatures, and its application range is narrow. Moreover, the giant magnetoresistive material is made of metal, and has a large hardness, is not easy to be cut, and limits its application. A giant magnetoresistive material of a multilayer film structure composed of a ferromagnetic layer and a non-ferrous layer can be prepared by molecular beam epitaxy, electrodeposition, ultra-high vacuum evaporation, and magnetron sputtering. The above preparation method has a complicated process and a high cost.
請參見“巨磁阻效應研究的最新進展”(王麗麗，賈城，哈爾濱師範大學自然科學學報，2005年，第21卷，第1期)。顆粒膜結構的巨磁阻效應係最近幾年才發現，通常係指微顆粒(奈米量級)分散於薄膜中所產生的複合膜，如常見的Fe或Co微顆粒嵌於Ag或Cu等薄膜中構成。顆粒膜屬於非均勻相組成的體系，顆粒膜中的異相介面(凡結構相同而取向不同的晶體相互接觸，其接觸介面稱為晶界。如果相鄰晶粒不僅位元向不同，而且結構、組成也不相同，即它們代表不同的兩個相，測其間界稱為相介面或介面。)對電子輸運性質和電，磁，光等特性都有明顯的影響。顆粒膜與多層膜有許多相似之處，二者都屬於二相或多相複合非均勻體系。但顆粒膜中的顆粒係混亂的統計分佈，其工藝製備相對多層膜簡單且較實用。常見的製備方法有共蒸法，共濺射，離子注入 等。一般實驗室多採用磁控濺射及離子束濺射的方法製備。磁性顆粒膜巨磁阻效應存在的問題係：鐵磁顆粒處在超順磁態獲得巨磁阻效應需要非常高的飽和磁場。並且，該巨磁阻材料由金屬製成，其硬度較大，不易剪裁，限制了該材料的使用。 Please refer to “The Latest Development of Giant Magnetoresistance Effect Research” (Wang Lili, Jia Cheng, Journal of Natural Science of Harbin Normal University, 2005, Vol. 21, No. 1). The giant magnetoresistance effect of the granular membrane structure has only been discovered in recent years. It usually refers to a composite membrane produced by dispersing microparticles (nanoscale) in a film, such as common Fe or Co microparticles embedded in Ag or Cu, etc. Constructed in a film. The granular film belongs to a system composed of a heterogeneous phase, and the heterophase interface in the granular film (all crystals having the same structure but different orientations are in contact with each other, and the contact interface is called a grain boundary. If adjacent grains are not only different in orientation, but also in structure, The composition is also different, that is, they represent two different phases, and the boundary between them is called phase interface or interface.) It has obvious influence on the properties of electron transport and electrical, magnetic and optical properties. Granular membranes have many similarities to multilayer membranes, both of which are two-phase or multi-phase composite heterogeneous systems. However, the statistical distribution of the particles in the granular film is disordered, and the process preparation is simple and practical with respect to the multilayer film. Common preparation methods are co-evaporation, co-sputtering, ion implantation Wait. Generally, the laboratory is prepared by magnetron sputtering and ion beam sputtering. The problem of the giant magnetoresistance effect of magnetic particle film is that the giant magnetoresistance effect of the ferromagnetic particle in the superparamagnetic state requires a very high saturation magnetic field. Moreover, the giant magnetoresistive material is made of metal, and has a high hardness and is not easily cut, which limits the use of the material.
奈米碳管係一種新型一維奈米材料，其具有優異的導電性能、較高的抗張強度和較高的熱穩定性，在材料科學、化學、物理學等交叉學科領域已展現出廣闊的應用前景。目前，已有將奈米碳管與高分子材料混合，製造複合材料。范守善等於2006年6月16日申請，2007年12月19日公開的公開號為CN101090586的專利申請，公開了一種奈米柔性電熱材料及包括該奈米柔性電熱材料的加熱裝置。請參閱圖1，所述奈米柔性電熱材料10包括柔性高分子基底材料14及分散在柔性高分子基底材料14中的大量奈米碳管12。奈米碳管12互相搭接在柔性高分子基底材料14中形成大量導電網路，從而奈米柔性電熱材料10可以導電，通電以後可發熱，發熱後，所述的奈米柔性電熱材料10體積發生膨脹。該專利申請未揭示所述奈米柔性電熱材料10具有巨磁阻特性。 Nano carbon tube is a new type of one-dimensional nano-material, which has excellent electrical conductivity, high tensile strength and high thermal stability. It has been widely displayed in the fields of materials science, chemistry and physics. Application prospects. At present, a carbon nanotube has been mixed with a polymer material to produce a composite material. The patent application of the publication No. CN101090586, published on Dec. 16, 2006, issued on Dec. 19, 2007, discloses a nano-flexible electrothermal material and a heating device including the nano-flexible electrocaloric material. Referring to FIG. 1 , the nano flexible electrothermal material 10 includes a flexible polymer base material 14 and a plurality of carbon nanotubes 12 dispersed in the flexible polymer base material 14 . The carbon nanotubes 12 are overlapped with each other to form a large number of conductive networks in the flexible polymer base material 14, so that the nano-flexible electrothermal material 10 can be electrically conductive, and can be heated after being energized. After heating, the nano-flexible electrothermal material has a volume of 10 An expansion occurred. This patent application does not disclose that the nano-flexible electrocaloric material 10 has giant magnetoresistance characteristics.
先前技術中揭示了一種採用奈米碳管與磁性合金複合而成的巨磁阻材料，請參見“奈米碳管在磁性材料中的應用”，閔娜等，湖北工學院學報，第19卷第1期，2004年2月。這種奈米碳管與金屬複合的巨磁阻材料，採用化學鍍的方法在奈米碳管表面鍍覆Co-Zn-P、Co-Fe-P、Ni-Co-P或Ni-Zn-P等金屬合金。然而，由於奈米碳管高 度石墨化，直徑非常小，表面曲率大，催化活性差，因此在奈米碳管表面獲得緻密而均勻的鍍層十分困難，因此奈米碳管與磁性金屬複合的巨磁阻材料難以實際應用。且藉由上述方法制得奈米碳管與磁性金屬複合而成的巨磁阻材料為粉末態，也進一步限制了該巨磁阻材料的應用。 A giant magnetoresistance material composed of a carbon nanotube and a magnetic alloy is disclosed in the prior art, see "Application of Nano Carbon Tubes in Magnetic Materials", Mina et al., Journal of Hubei Institute of Technology, Vol. Phase 1, February 2004. The giant magnetoresistance material of the carbon nanotube and the metal is electrolessly plated on the surface of the carbon nanotube by Co-Zn-P, Co-Fe-P, Ni-Co-P or Ni-Zn- Metal alloy such as P. However, due to the high carbon nanotubes Graphitization, very small diameter, large surface curvature, and poor catalytic activity, it is very difficult to obtain a dense and uniform coating on the surface of the carbon nanotube. Therefore, the giant magnetoresistance material in which the carbon nanotube and the magnetic metal are combined is difficult to be practically applied. The giant magnetoresistive material obtained by combining the carbon nanotubes and the magnetic metal by the above method is in a powder state, which further limits the application of the giant magnetoresistive material.
有鑒於此，提供一種易於實際應用的含奈米碳管的巨磁阻材料實為必要。 In view of this, it is necessary to provide a giant magnetoresistive material containing a carbon nanotube which is easy to practically apply.
一種巨磁阻複合材料，其包括：一高分子基體，以及分散在所述高分子基體中的複數個奈米碳管。其中，所述複數個奈米碳管中，至少部分奈米碳管相互獨立地分散在高分子基體中。 A giant magnetoresistive composite material comprising: a polymer matrix; and a plurality of carbon nanotubes dispersed in the polymer matrix. Wherein, at least a part of the carbon nanotubes of the plurality of carbon nanotubes are dispersed independently of each other in the polymer matrix.
與先前技術相比較，所述巨磁阻複合材料具有以下優點：其一，由於所述巨磁阻複合材料包括至少部分奈米碳管相互獨立地分散於高分子基體中，從而使得該巨磁阻複合材料具有巨磁阻特性，而高分子基體具有較高柔韌性，使得所述的巨磁阻複合材料具有較高的柔韌性，可應用於柔性的電子器件中。其二，由於所述巨磁阻複合材料的基體為高分子材料，很容易將該巨磁阻複合材料剪裁為任意形狀，在應用時比較方便。 Compared with the prior art, the giant magnetoresistive composite material has the following advantages: First, since the giant magnetoresistive composite material includes at least a portion of the carbon nanotubes dispersed independently of each other in the polymer matrix, thereby causing the giant magnetism The resistive composite material has giant magnetoresistance characteristics, and the polymer matrix has high flexibility, so that the giant magnetoresistive composite material has high flexibility and can be applied to flexible electronic devices. Secondly, since the matrix of the giant magnetoresistive composite material is a polymer material, the giant magnetoresistive composite material can be easily cut into an arbitrary shape, which is convenient in application.
以下將結合附圖詳細說明本發明的巨磁阻複合材料。 Hereinafter, the giant magnetoresistive composite material of the present invention will be described in detail with reference to the accompanying drawings.
請參閱圖2，本發明實施例提供一種巨磁阻複合材料20， 其包括一高分子基體22，及分散在所述高分子基體22中的複數個奈米碳管24。所述複數個奈米碳管24中，至少部分奈米碳管24相互獨立地分散於所述高分子基體22中。本實施例所述複數個奈米碳管24中，至少部分奈米碳管24相互獨立地分散於所述高分子基體22中，本實施例中的複數個奈米碳管24不會相互搭接形成導電網路。優選地，所述複數個奈米碳管24無序排列，且各向同性，均勻分散在高分子基體22中，任意兩個相鄰的奈米碳管24之間存在間距，該間距的範圍為2奈米~5微米。所述複數個奈米碳管24，各向同性，均勻分散在高分子基體22中，因此該巨磁阻複合材料20在各個方向均具有巨磁阻特性。 Referring to FIG. 2, an embodiment of the present invention provides a giant magnetoresistive composite material 20, It comprises a polymer matrix 22 and a plurality of carbon nanotubes 24 dispersed in the polymer matrix 22. Of the plurality of carbon nanotubes 24, at least a portion of the carbon nanotubes 24 are dispersed in the polymer matrix 22 independently of each other. In the plurality of carbon nanotubes 24 of the embodiment, at least a portion of the carbon nanotubes 24 are independently dispersed in the polymer matrix 22, and the plurality of carbon nanotubes 24 in the embodiment do not overlap each other. Connected to form a conductive network. Preferably, the plurality of carbon nanotubes 24 are disorderly arranged, isotropic, and uniformly dispersed in the polymer matrix 22, and there is a spacing between any two adjacent carbon nanotubes 24, and the range of the spacing It is 2 nm to 5 microns. The plurality of carbon nanotubes 24 are isotropically and uniformly dispersed in the polymer matrix 22, and thus the giant magnetoresistive composite material 20 has giant magnetoresistance characteristics in all directions.
所述高分子基體22的材料可選自矽橡膠、聚氨脂、環氧樹脂及聚甲基丙烯酸甲酯中的一種或任意組合。所述高分子基體22在所述巨磁阻複合材料20中的質量百分含量大於等於98%。可以理解，由於高分子基體22較容易剪裁，因此本發明的巨磁阻複合材料20可以根據實際需要進行剪裁。 The material of the polymer matrix 22 may be selected from one or any combination of ruthenium rubber, polyurethane, epoxy resin, and polymethyl methacrylate. The mass percentage of the polymer matrix 22 in the giant magnetoresistive composite material 20 is greater than or equal to 98%. It can be understood that since the polymer matrix 22 is easier to cut, the giant magnetoresistive composite material 20 of the present invention can be tailored according to actual needs.
本實施例中，所述高分子基體22材料為矽橡膠，矽橡膠在巨磁阻複合材料20中的質量百分含量大於等於98%。由於矽橡膠具有較高的柔韌性，且可以任意剪裁，因此本實施例的巨磁阻複合材料20可以根據實際需要進行剪裁。 In this embodiment, the polymer matrix 22 is made of tantalum rubber, and the mass percentage of the tantalum rubber in the giant magnetoresistive composite material 20 is greater than or equal to 98%. Since the yttrium rubber has high flexibility and can be arbitrarily cut, the giant magnetoresistive composite material 20 of the present embodiment can be tailored according to actual needs.
所述奈米碳管24在所述巨磁阻複合材料20中的質量百分含量小於等於2%。所述奈米碳管24的長度為1~20微米。 所述奈米碳管24可為單壁奈米碳管、雙壁奈米碳管及多壁奈米碳管中的一種或任意組合。單壁奈米碳管的直徑為0.5奈米~50奈米，雙壁奈米碳管的直徑為1.0奈米~50奈米，多壁奈米碳管的直徑為1.5奈米~50奈米。本實施例中，該奈米碳管24為多壁奈米碳管，該多壁奈米碳管的直徑為10奈米~20奈米，長度為5微米~10微米。 The mass percentage of the carbon nanotubes 24 in the giant magnetoresistive composite material 20 is 2% or less. The carbon nanotubes 24 have a length of 1 to 20 microns. The carbon nanotubes 24 may be one or any combination of a single-walled carbon nanotube, a double-walled carbon nanotube, and a multi-walled carbon nanotube. Single-walled carbon nanotubes have a diameter of 0.5 nm to 50 nm, double-walled carbon nanotubes have a diameter of 1.0 nm to 50 nm, and multi-walled carbon nanotubes have a diameter of 1.5 nm to 50 nm. . In this embodiment, the carbon nanotubes 24 are multi-walled carbon nanotubes having a diameter of 10 nm to 20 nm and a length of 5 μm to 10 μm.
圖3為本實施例的巨磁阻複合材料20的表面的掃描電鏡照片。該巨磁阻複合材料20的長度為10毫米，寬度為5毫米，厚度為1毫米的長方形片材。 3 is a scanning electron micrograph of the surface of the giant magnetoresistive composite material 20 of the present embodiment. The giant magnetoresistive composite material 20 has a length of 10 mm, a width of 5 mm, and a rectangular sheet having a thickness of 1 mm.
本實施例中，由於矽橡膠具有較高的柔韌性，該巨磁阻複合材料20可以任意剪裁。在使用時，可以根據需要將該巨磁阻複合材料20剪裁成為任意大小的材料，並將其應用於柔性的器件中。所述複數個奈米碳管24無序排列，且各向同性，均勻分散在矽橡膠基體中，任意兩個相鄰的奈米碳管24之間具有一定間距，該間距的範圍為2奈米~5微米。由於該巨磁阻複合材料20中，複數個奈米碳管24相互獨立地分散在高分子基體22中，且任意兩個奈米碳管24之間存在一定的間距，從而使得該複數個奈米碳管24之間能夠產生自旋隧道效應，從而使得在對該材料施加磁場時，由於自旋隧道效應產生量子隧穿，從而電子可以穿過奈米碳管24之間的矽橡膠絕緣層。從而使得該巨磁阻複合材料20的電阻下降，從而產生隧道磁阻，使得該巨磁阻複合材料20具有巨磁阻特性。 In the present embodiment, the giant magnetoresistive composite material 20 can be arbitrarily cut due to the high flexibility of the ruthenium rubber. In use, the giant magnetoresistive composite 20 can be tailored to any size material as needed and applied to flexible devices. The plurality of carbon nanotubes 24 are disorderly arranged, isotropic, and uniformly dispersed in the base rubber matrix, and has a certain spacing between any two adjacent carbon nanotubes 24, and the pitch ranges from 2 nanometers. Meter ~ 5 microns. Due to the giant magnetoresistive composite material 20, a plurality of carbon nanotubes 24 are dispersed independently of each other in the polymer matrix 22, and there is a certain distance between any two of the carbon nanotubes 24, thereby making the plurality of nanotubes The spin tunneling effect can be generated between the carbon nanotubes 24, so that when a magnetic field is applied to the material, quantum tunneling occurs due to the spin tunneling effect, so that electrons can pass through the ruthenium rubber insulating layer between the carbon nanotubes 24. . Thereby, the resistance of the giant magnetoresistive composite material 20 is lowered, thereby generating tunneling magnetic resistance, so that the giant magnetoresistive composite material 20 has giant magnetoresistance characteristics.
請參見圖4，該圖為在常溫下，磁場強度(H)為10k奧斯特(Oe)時，本實施例巨磁阻複合材料20中奈米碳管24 的質量百分含量與該巨磁阻複合材料20的MR的關係曲線。藉由圖4可以看出，在磁場強度為10k奧斯特情況下，奈米碳管24的質量百分含量小於0.5%時，隨著奈米碳管24在所述巨磁阻複合材料20中的質量百分含量的增加，該巨磁阻複合材料20的MR增加；當奈米碳管24的質量百分含量達到0.5%時，MR達到最大值14%。當奈米碳管24的質量百分含量大於0.5%時，隨著奈米碳管24在所述巨磁阻複合材料20中的質量百分含量的增加，該巨磁阻複合材料20的MR開始減小。本實施例中，在常溫下，磁場強度為10k奧斯特時，奈米碳管24的質量百分含量為0.2%~1%，該巨磁阻複合材料20的MR在5%~14%。奈米碳管24的質量百分含量為0.5%~0.6%時，該巨磁阻複合材料20的MR在10%~14%。 Please refer to FIG. 4 , which is a carbon nanotube 24 in the giant magnetoresistive composite material 20 of the present embodiment when the magnetic field strength (H) is 10 k Oersted (Oe) at normal temperature. The mass percent content is a function of the MR of the giant magnetoresistive composite 20. As can be seen from FIG. 4, in the case where the magnetic field strength is 10 kOersted, when the mass percentage of the carbon nanotubes 24 is less than 0.5%, the carbon nanotubes 24 are in the giant magnetoresistive composite material 20 The increase in the mass percentage increases the MR of the giant magnetoresistive composite 20; when the mass percentage of the carbon nanotubes 24 reaches 0.5%, the MR reaches a maximum of 14%. When the mass percentage of the carbon nanotubes 24 is greater than 0.5%, the MR of the giant magnetoresistive composite material 20 increases as the mass percentage of the carbon nanotubes 24 in the giant magnetoresistive composite material 20 increases. Start to decrease. In this embodiment, at a normal temperature, when the magnetic field strength is 10 kOersted, the mass percentage of the carbon nanotubes 24 is 0.2% to 1%, and the MR of the giant magnetoresistive composite material 20 is 5% to 14%. . When the mass percentage of the carbon nanotubes 24 is 0.5% to 0.6%, the MR of the giant magnetoresistive composite material 20 is 10% to 14%.
本發明實施例提供的巨磁阻複合材料具有以下優點：其一，由於所述巨磁阻複合材料包括至少部分奈米碳管相互獨立地分散於高分子基體中，從而使得該巨磁阻複合材料具有巨磁阻特性，而高分子基體具有較高柔韌性，使得本發明的巨磁阻複合材料具有較高的柔韌性，可應用於柔性的電子器件中。其二，所述巨磁阻複合材料在常溫下，磁場強度為10k奧斯特時，其MR可達到14%，從而使得該材料在常溫下得到很好的應用。其三，由於本發明實施例的巨磁阻複合材料為柔性材料，很容易將該巨磁阻複合材料剪裁為較小的材料，故，在應用時比較方便。其四，由於奈米碳管在高分子基體中均勻分散且各向同性排列，因此該巨磁阻複合材料在各個方向上具 有巨磁阻特性。 The giant magnetoresistive composite material provided by the embodiment of the invention has the following advantages: First, since the giant magnetoresistive composite material comprises at least a portion of the carbon nanotubes dispersed independently of each other in the polymer matrix, the giant magnetoresistive composite is The material has giant magnetoresistance characteristics, and the polymer matrix has high flexibility, so that the giant magnetoresistive composite material of the invention has high flexibility and can be applied to flexible electronic devices. Secondly, when the giant magnetoresistive composite material has a magnetic field strength of 10 kOe at normal temperature, the MR can reach 14%, so that the material is well applied at normal temperature. Thirdly, since the giant magnetoresistive composite material of the embodiment of the present invention is a flexible material, the giant magnetoresistive composite material can be easily cut into a smaller material, so that it is convenient in application. Fourth, since the carbon nanotubes are uniformly dispersed and isotropically arranged in the polymer matrix, the giant magnetoresistive composite material has various directions. Has giant magnetoresistance characteristics.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
20‧‧‧巨磁阻複合材料 20‧‧‧Giant Magnetoresistive Composites
22‧‧‧高分子基體 22‧‧‧ polymer matrix
24‧‧‧奈米碳管 24‧‧‧Nano Carbon Tube
圖1為先前技術中的柔性電熱複合材料結構示意圖。 1 is a schematic view showing the structure of a flexible electrothermal composite material in the prior art.
圖2為本發明實施例提供的巨磁阻複合材料結構示意圖。 2 is a schematic structural view of a giant magnetoresistive composite material according to an embodiment of the present invention.
圖3為本發明實施例提供的巨磁阻複合材料的掃描電鏡照片。 FIG. 3 is a scanning electron micrograph of a giant magnetoresistive composite material according to an embodiment of the present invention.
圖4為本發明實施例提供的巨磁阻複合材料的磁阻與奈米碳管質量百分含量的關係曲線。 4 is a graph showing the relationship between the magnetoresistance of a giant magnetoresistive composite material and the mass percentage of a carbon nanotube according to an embodiment of the present invention.
20‧‧‧巨磁阻複合材料 20‧‧‧Giant Magnetoresistive Composites
22‧‧‧高分子基體 22‧‧‧ polymer matrix
24‧‧‧奈米碳管 24‧‧‧Nano Carbon Tube
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| US6171693B1 (en) * | 1998-10-27 | 2001-01-09 | The United States Of America As Represented By The Secretary Of The Navy | Structures with improved magnetic characteristics for giant magneto-resistance applications |
| JP2004335259A (en) * | 2003-05-07 | 2004-11-25 | Matsushita Electric Ind Co Ltd | Electrical wiring, electronic device, magnetoresistance effect element, magnetic head, magnetic medium, recording devices, and manufacturing method of the above |
| TW200638358A (en) * | 2005-04-22 | 2006-11-01 | Taiwan Semiconductor Mfg Co Ltd | Magnetoresistive structures and fabrication methods |
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| US6171693B1 (en) * | 1998-10-27 | 2001-01-09 | The United States Of America As Represented By The Secretary Of The Navy | Structures with improved magnetic characteristics for giant magneto-resistance applications |
| JP2004335259A (en) * | 2003-05-07 | 2004-11-25 | Matsushita Electric Ind Co Ltd | Electrical wiring, electronic device, magnetoresistance effect element, magnetic head, magnetic medium, recording devices, and manufacturing method of the above |
| TW200638358A (en) * | 2005-04-22 | 2006-11-01 | Taiwan Semiconductor Mfg Co Ltd | Magnetoresistive structures and fabrication methods |
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