TWI385261B - Evaporator and liquid level controlling device and method adapted for an evaporator - Google Patents
Evaporator and liquid level controlling device and method adapted for an evaporator Download PDFInfo
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Description
本發明係關於一種蒸發機及液位控制裝置及方法,尤其關於一種有效控制坩鍋之液體之液位,並使液位維持在大致固定高度的蒸發機及液位控制裝置及方法。The present invention relates to an evaporator and a liquid level control device and method, and more particularly to an evaporator and a liquid level control device and method for effectively controlling the liquid level of a liquid of a crucible and maintaining the liquid level at a substantially fixed height.
在薄膜太陽能電池中CIGS(copper indium gallium(di)selenide)是屬於化合物半導體。CIGS屬於多晶薄膜的形式,它是由銅、銦、鎵以及硒所組成的一三五族化合物半導體材料。圖1A顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。圖1B顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。如圖1A所示,CIGS薄膜太陽能電池10包含一玻璃基板11。於玻璃基板11上依序沉積鉬金屬層12、銅鎵金屬層13、銦金屬層14及硒層15。如圖1B所示,對圖1A步驟的CIGS薄膜太陽能電池10,進行退火(annealing)處理後,銅鎵金屬層13、銦金屬層14及硒層15會形成一CIGSe金屬層16。CIGS (copper indium gallium (di) selenide) is a compound semiconductor in a thin film solar cell. CIGS is in the form of a polycrystalline film, which is a group of three or five compound semiconductor materials composed of copper, indium, gallium and selenium. Figure 1A shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. Figure 1B shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. As shown in FIG. 1A, the CIGS thin film solar cell 10 includes a glass substrate 11. A molybdenum metal layer 12, a copper gallium metal layer 13, an indium metal layer 14, and a selenium layer 15 are sequentially deposited on the glass substrate 11. As shown in FIG. 1B, after the annealing treatment of the CIGS thin film solar cell 10 of the step of FIG. 1A, the copper gallium metal layer 13, the indium metal layer 14 and the selenium layer 15 form a CIGSe metal layer 16.
圖2A顯示一習知硒蒸發機之坩鍋及氣管間之結構的示意圖。如圖2A所示,硒蒸發機100包含至少一坩鍋110、至少一第一進氣管121、至少一第二進氣管122及一排氣管123。坩鍋110界定出一空間,該空間之下部中注入有已被融化的硒液體111,該空間之上部中充滿有已被蒸發的硒蒸氣112。且坩鍋110所界定的空間與第一進氣管121及第二進氣管122連通。於蒸鍍硒層的步驟中,將第一製程氣體(例如使用氮氣(N2))通入第一進氣管121之進氣端,第一製程氣體流入坩鍋110中,將硒蒸氣112排出後,使硒蒸氣112通入第二進氣管122。於第二進氣管122的進氣端通入第二製程氣體(例如亦使用氮氣(N2)),以帶動硒蒸氣112從第二進氣管122的出口流出。硒蒸氣112隨著第一及第二製程氣體從第二進氣管122的出氣端排出,接觸置於第二進氣管122的出氣端附近的玻璃基板11,使硒層15層積於玻璃基板11上。Fig. 2A is a schematic view showing the structure between a crucible and a gas pipe of a conventional selenium evaporator. As shown in FIG. 2A, the selenium evaporator 100 includes at least one crucible 110, at least one first intake pipe 121, at least one second intake pipe 122, and an exhaust pipe 123. The crucible 110 defines a space into which a selenium liquid 111 that has been melted is injected, and an upper portion of the space is filled with selenium vapor 112 that has been evaporated. The space defined by the crucible 110 is in communication with the first intake pipe 121 and the second intake pipe 122. In the step of vapor-depositing the selenium layer, the first process gas (for example, using nitrogen (N2)) is introduced into the inlet end of the first intake pipe 121, and the first process gas flows into the crucible 110 to discharge the selenium vapor 112. Thereafter, the selenium vapor 112 is passed to the second intake pipe 122. A second process gas is introduced into the intake end of the second intake pipe 122 (for example, nitrogen (N2) is also used) to drive the selenium vapor 112 to flow out from the outlet of the second intake pipe 122. The selenium vapor 112 is discharged from the outlet end of the second intake pipe 122 with the first and second process gases, and contacts the glass substrate 11 placed near the outlet end of the second intake pipe 122, so that the selenium layer 15 is laminated on the glass. On the substrate 11.
圖2B顯示一習知硒蒸發機之坩鍋及進料(dosing)裝置間之結構的示意圖。硒蒸發機100更包含一進料裝置。進料裝置包含一裝載裝置131及一進料管132。裝載裝置131置入有固態的硒原料,硒原料通過進料管132進入坩鍋110中,被坩鍋110加熱後融化形成硒液體。Figure 2B shows a schematic diagram of the structure between a crucible and a dosing device of a conventional selenium evaporator. The selenium evaporator 100 further includes a feed device. The feeding device comprises a loading device 131 and a feeding tube 132. The loading device 131 is filled with a solid selenium raw material, and the selenium raw material enters the crucible 110 through the feeding tube 132, is heated by the crucible 110, and is melted to form a selenium liquid.
如何控制硒蒸發機100之硒液體的液位一直是未解決的問題。於習知技術中設計了2種液位偵測方法,一種是光學式,一種是探針式。依據探針式的偵測方法,如圖2B所示,硒蒸發機100更包含有液位感應器140,置於坩鍋110中用以控制硒液體的液位。然而由於坩鍋110是處於高溫狀態下,液位感應器140必須使用耐高溫的特殊材質,且硒對金屬的腐蝕性很強,液位感應器140的金屬在測試中很快會在硒液體中腐蝕,因此無法控制液位。另一方面依據光學式的偵測方法,光學式感應器必須使光透過坩鍋110的一視窗(window)以感測液位,但是石英視窗很快會附著硒而霧化,無法穿透光線,因而無法偵測液位。How to control the liquid level of the selenium liquid of the selenium evaporator 100 has been an unresolved problem. Two kinds of liquid level detecting methods are designed in the prior art, one is optical type and the other is probe type. According to the probe type detecting method, as shown in FIG. 2B, the selenium evaporator 100 further includes a liquid level sensor 140 disposed in the crucible 110 for controlling the liquid level of the selenium liquid. However, since the crucible 110 is in a high temperature state, the liquid level sensor 140 must use a special material resistant to high temperature, and the selenium is highly corrosive to the metal, and the metal of the liquid level sensor 140 will soon be in the selenium liquid during the test. Corrosive, so the liquid level cannot be controlled. On the other hand, according to the optical detection method, the optical sensor must pass light through a window of the crucible 110 to sense the liquid level, but the quartz window will soon adhere to the selenium and be atomized, failing to penetrate the light. Therefore, the liquid level cannot be detected.
若無法正確地偵測坩鍋110中硒液體的液位,則硒蒸發機100無法利用進料裝置自動地控制使硒原料進入坩鍋110的硒進料量,操作人員無法知道目前坩鍋110中硒液體的液位,直到硒液體蒸發完後,或硒蒸鍍的厚度減少,才得知坩鍋110已無硒液體,再以人工方式進料,因此產生大量不良品,且無法連續生產。If the liquid level of the selenium liquid in the crucible 110 cannot be correctly detected, the selenium evaporator 100 cannot automatically control the selenium feed amount that causes the selenium raw material to enter the crucible 110 by the feeding device, and the operator cannot know the current crucible 110. The liquid level of the selenium liquid until the thickness of the selenium liquid is evaporated, or the thickness of the selenium vapor deposition is reduced, it is known that the crucible 110 has no selenium liquid, and then is fed manually, thus producing a large number of defective products, and cannot be continuously produced. .
本發明一實施例之目的在於提供一種有效控制坩鍋之液體之液位,並使液位維持在大致固定高度的蒸發機及液位控制裝置。It is an object of an embodiment of the present invention to provide an evaporator and a level control device that effectively control the liquid level of the liquid in the crucible and maintain the liquid level at a substantially fixed height.
依據本發明一實施例,提供一種液位控制裝置包含一第一坩鍋、一第二坩鍋及一氣管。第一坩鍋用以將一物質融解成液體,連通於其外部以使一製程氣體通入於第一坩鍋內,並帶走第一坩鍋內之物質的蒸氣。第二坩鍋用以將物質融解成液體,且連通於第一坩鍋,藉以使第二坩鍋的液體流入第一坩鍋。氣管包含一第一開口端及一第二開口端。第一開口端設置在第二坩鍋,第二開口端設於第一坩鍋,且當第一坩鍋內液體之液位低於氣管的第二開口端時,第二坩鍋內的空間透過氣管連通於第一坩鍋內的空間,當第一坩鍋內液體之液位高於氣管的第二開口端時,第二坩鍋內的空間形成密閉空間。According to an embodiment of the invention, a liquid level control device includes a first crucible, a second crucible, and an air tube. The first crucible is used to melt a substance into a liquid, and is connected to the outside to allow a process gas to pass into the first crucible and carry away the vapor of the substance in the first crucible. The second crucible is used to melt the substance into a liquid and communicate with the first crucible so that the liquid of the second crucible flows into the first crucible. The trachea includes a first open end and a second open end. The first open end is disposed in the second crucible, the second open end is disposed in the first crucible, and when the liquid level in the first crucible is lower than the second open end of the trachea, the space in the second crucible The space in the first crucible is communicated through the air tube to the space in the first crucible. When the liquid level in the first crucible is higher than the second open end of the trachea, the space in the second crucible forms a confined space.
依據本發明一實施例,提供一種蒸發機適用於將一物質蒸鍍在一基板上。蒸發機包含一液位控制裝置、一第一進氣管及一排氣管。液位控制裝置包含一第一坩鍋、一第二坩鍋及一氣管。第一坩鍋用以將物質融解成液體,第二坩鍋用以將物質融解成液體,且連通於第一坩鍋,藉以使第二坩鍋的液體流入第一坩鍋。氣管包含一第一開口端設置在第二坩鍋、以及一第二開口端設於第一坩鍋。當第一坩鍋內液體之液位低於氣管的第二開口端時,第二坩鍋內的空間透過氣管連通於第一坩鍋內的空間,當第一坩鍋內液體之液位高於氣管的第二開口端時,第二坩鍋內的空間形成密閉空間。第一進氣管連通於第一坩鍋,以使一第一製程氣體通入第一進氣管,帶走第一坩鍋內之物質的蒸氣,使其接觸基板。排氣管適於將流出第一坩鍋的第一製程氣體及物質的蒸氣,排出蒸發機。According to an embodiment of the invention, an evaporator is provided for vapor deposition of a substance onto a substrate. The evaporator includes a liquid level control device, a first intake pipe and an exhaust pipe. The liquid level control device comprises a first crucible, a second crucible and an air tube. The first crucible is used to melt the substance into a liquid, and the second crucible is used to melt the substance into a liquid and communicate with the first crucible so that the liquid of the second crucible flows into the first crucible. The trachea includes a first open end disposed in the second crucible and a second open end disposed in the first crucible. When the liquid level of the liquid in the first crucible is lower than the second open end of the trachea, the space in the second crucible is communicated with the space in the first crucible through the trachea, when the liquid level in the first crucible is high At the second open end of the trachea, the space within the second crucible forms a confined space. The first intake pipe is connected to the first crucible, so that a first process gas is introduced into the first intake pipe, and the vapor of the substance in the first crucible is taken away to contact the substrate. The exhaust pipe is adapted to discharge the vapor of the first process gas and the substance flowing out of the first crucible into the evaporator.
依據本發明一實施例,能夠有效控制第一坩鍋之液體之液位,並使液位維持在大致固定的高度,增加蒸鍍步驟的穩定,使蒸鍍後的膜厚度的差異較為均勻,且能夠達到自動控制,減少人工管控的成本。According to an embodiment of the invention, the liquid level of the liquid of the first crucible can be effectively controlled, the liquid level can be maintained at a substantially fixed height, the stability of the vapor deposition step can be increased, and the difference in film thickness after evaporation can be more uniform. And can achieve automatic control, reducing the cost of manual control.
本發明的其他目的和優點可以從本發明所揭露的技術特徵中得到進一步的了解。為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例並配合所附圖式,作詳細說明如下。Other objects and advantages of the present invention will become apparent from the technical features disclosed herein. The above and other objects, features, and advantages of the invention will be apparent from
圖3顯示依本發明一實施例之適用於硒蒸發機的液位控制裝置。如圖3所示,適用於硒蒸發機的液位控制裝置200,其適合裝設於一硒蒸發機且用以控制硒蒸發機中硒液體的液位。適用於硒蒸發機的液位控制裝置200包含一第一坩鍋210、一第二坩鍋220及一氣管240。第二坩鍋220連通於第一坩鍋210,藉以使第二坩鍋220中的硒液體流入第一坩鍋210。氣管240連通於第二坩鍋220及第一坩鍋210之間,更具體而言,氣管240的第一開口端241設置在第二坩鍋220之高於硒液體之液位的部位,氣管240的第二開口端242設於第一坩鍋210內,當第一坩鍋210內之硒液體之液位L1低於氣管240的第二開口端242時,第二坩鍋220所界定的空間透過氣管240連通於第一坩鍋210內的空間。於本實施例中,使第二坩鍋220中之硒液體的液位高於第一坩鍋210中之硒液體的液位,並因重力作用第二坩鍋220中的硒液體流入第一坩鍋210,使第一坩鍋210內之硒液體之液位升高。Figure 3 shows a liquid level control device suitable for use in a selenium evaporator in accordance with an embodiment of the present invention. As shown in FIG. 3, a liquid level control device 200 suitable for a selenium evaporator is suitable for being installed in a selenium evaporator and for controlling the liquid level of the selenium liquid in the selenium evaporator. The liquid level control device 200 suitable for the selenium evaporator includes a first crucible 210, a second crucible 220, and a gas tube 240. The second crucible 220 is in communication with the first crucible 210, whereby the selenium liquid in the second crucible 220 flows into the first crucible 210. The air tube 240 is connected between the second crucible 220 and the first crucible 210. More specifically, the first open end 241 of the trachea 240 is disposed at a position higher than the liquid level of the selenium liquid of the second crucible 220, the trachea The second open end 242 of the 240 is disposed in the first crucible 210. When the liquid level L1 of the selenium liquid in the first crucible 210 is lower than the second open end 242 of the air tube 240, the second crucible 220 defines The space communicates with the space in the first crucible 210 through the air tube 240. In this embodiment, the liquid level of the selenium liquid in the second crucible 220 is higher than the liquid level of the selenium liquid in the first crucible 210, and the selenium liquid in the second crucible 220 flows into the first due to gravity. The crucible 210 raises the liquid level of the selenium liquid in the first crucible 210.
當第一坩鍋210內之硒液體之液位L2上升至高於氣管240的第二開口端242時,第二開口端242被堵住,第二坩鍋220所界定的空間無法再透過氣管240連通於外部的大氣,因此第二坩鍋220所界定的空間221形成密閉空間。此時,若第二坩鍋220中的硒液體繼續流入第一坩鍋210中時,第二坩鍋220內之空間221的氣壓會小於第二坩鍋220之外部的氣壓,因外部氣壓作用使得第二坩鍋220中的硒液體無法再流入第一坩鍋210中,藉以使第一坩鍋210的硒液體之液位大致維持在氣管240的第二開口端242的高度。When the liquid level L2 of the selenium liquid in the first crucible 210 rises above the second open end 242 of the air tube 240, the second open end 242 is blocked, and the space defined by the second crucible 220 can no longer pass through the air tube 240. The atmosphere is connected to the outside, so the space 221 defined by the second crucible 220 forms a closed space. At this time, if the selenium liquid in the second crucible 220 continues to flow into the first crucible 210, the air pressure in the space 221 in the second crucible 220 may be lower than the air pressure outside the second crucible 220, due to external air pressure. The selenium liquid in the second crucible 220 can no longer flow into the first crucible 210, so that the liquid level of the selenium liquid of the first crucible 210 is substantially maintained at the height of the second open end 242 of the air tube 240.
於蒸鍍硒層的步驟中,第一坩鍋210的硒液體會被蒸發成硒蒸氣(Se vapor),硒蒸氣隨著製程氣體(例如使用氮氣(N2))排出第一坩鍋210,硒蒸氣排出後,第一坩鍋210之硒液體液位會下降,直到第一坩鍋210內之硒液體之液位L1低於氣管240的第二開口端242,第二坩鍋220所界定的空間再度能夠透過氣管240連通於第二坩鍋220外部的大氣,第二坩鍋220中的硒液體能夠再流入第一坩鍋210中,使第一坩鍋210內之硒液體之液位升高。藉此設計,適用於硒蒸發機的液位控制裝置200,能夠將第一坩鍋210的硒液體之液位大致維持在氣管240的第二開口端242的高度。另外,若因製程需求需要調整第一坩鍋210的硒液體之液位,只要調整第二開口端242的高度即可。In the step of vapor-depositing the selenium layer, the selenium liquid of the first crucible 210 is evaporated into sevapor vapor (Se vapor), and the selenium vapor is discharged from the first crucible 210 with the process gas (for example, using nitrogen (N 2 )), selenium After the vapor is discharged, the liquid level of the selenium liquid of the first crucible 210 is lowered until the liquid level L1 of the selenium liquid in the first crucible 210 is lower than the second open end 242 of the air tube 240, and the second crucible 220 defines The space can again communicate with the atmosphere outside the second crucible 220 through the air tube 240, and the selenium liquid in the second crucible 220 can flow into the first crucible 210 again, so that the liquid level of the selenium liquid in the first crucible 210 rises. high. With this design, the liquid level control device 200 suitable for the selenium evaporator can maintain the liquid level of the selenium liquid of the first crucible 210 substantially at the height of the second open end 242 of the air tube 240. In addition, if it is necessary to adjust the liquid level of the selenium liquid of the first crucible 210 due to the process requirements, it is only necessary to adjust the height of the second open end 242.
此外於一實施例中,硒蒸發機的液位控制裝置200還可以更包含有進料裝置230,進料裝置230透過一閥門與第二坩鍋220連接,當要將硒原料投入第二坩鍋220中時,打開閥門,使硒原料進入第二坩鍋220中。當關閉閥門且第一坩鍋210內之硒液體之液位L2高於氣管240的第二開口端242時,第二坩鍋220所界定的空間依然形成密閉空間。In addition, in an embodiment, the liquid level control device 200 of the selenium evaporator may further include a feeding device 230, and the feeding device 230 is connected to the second crucible 220 through a valve, when the selenium raw material is to be put into the second crucible. In the pot 220, the valve is opened to allow the selenium raw material to enter the second crucible 220. When the valve is closed and the liquid level L2 of the selenium liquid in the first crucible 210 is higher than the second open end 242 of the air tube 240, the space defined by the second crucible 220 still forms a confined space.
圖4顯示依本發明一實施例之硒蒸發機其液位控制裝置及氣管間之結構的示意圖。如圖4所示,依本發明一實施例,硒蒸發機300包含至少一液位控制裝置200、至少一第一進氣管121、至少一第二進氣管122及一排氣管123。液位控制裝置200包含一第一坩鍋210、一第二坩鍋220及一氣管240。第二坩鍋220連通於第一坩鍋210,藉以使第二坩鍋220中的硒液體流入第一坩鍋210。氣管240的第一開口端241設置在第二坩鍋220之高於硒液體之液位的部位,氣管240的第二開口端242設於第一坩鍋210內。第一坩鍋210所界定的空間與第一進氣管121及第二進氣管122連通。於蒸鍍硒層的步驟中,將第一製程氣體(例如使用氮氣(N2))通入第一進氣管121之進氣端,第一製程氣體流入第一坩鍋210中,將硒蒸氣排出後,使硒蒸氣通入第二進氣管122。於第二進氣管122的進氣端通入第二製程氣體(例如亦使用氮氣(N2)),以避免硒蒸氣從第二進氣管122的進氣端排出。硒蒸氣隨著第一及第二製程氣體從第二進氣管122的出氣端排出,接觸置於第二進氣管122的出氣端附近的玻璃基板11,使硒層15層積於玻璃基板11上。4 is a schematic view showing the structure of a liquid level control device and a gas pipe of a selenium evaporator according to an embodiment of the present invention. As shown in FIG. 4, according to an embodiment of the invention, the selenium evaporator 300 includes at least one liquid level control device 200, at least one first intake pipe 121, at least one second intake pipe 122, and an exhaust pipe 123. The liquid level control device 200 includes a first crucible 210, a second crucible 220, and a gas tube 240. The second crucible 220 is in communication with the first crucible 210, whereby the selenium liquid in the second crucible 220 flows into the first crucible 210. The first open end 241 of the air tube 240 is disposed at a portion of the second crucible 220 above the liquid level of the selenium liquid, and the second open end 242 of the air tube 240 is disposed in the first crucible 210. The space defined by the first crucible 210 is in communication with the first intake pipe 121 and the second intake pipe 122. In the step of vapor-depositing the selenium layer, the first process gas (for example, using nitrogen (N2)) is introduced into the inlet end of the first intake pipe 121, and the first process gas flows into the first crucible 210 to remove the selenium vapor. After the discharge, the selenium vapor is introduced into the second intake pipe 122. A second process gas is introduced into the intake end of the second intake pipe 122 (for example, nitrogen (N2) is also used) to prevent the selenium vapor from being discharged from the intake end of the second intake pipe 122. The selenium vapor is discharged from the outlet end of the second intake pipe 122 with the first and second process gases, and contacts the glass substrate 11 placed near the outlet end of the second intake pipe 122, so that the selenium layer 15 is laminated on the glass substrate. 11 on.
於一實施例,第一坩鍋210可以開設有多個開口,而氣管240的第二開口端242透過多個閥243連接於該些開口,並且控制該些閥243的開及關,即可選擇性地使該些開口連通於氣管240的第二開口端242。藉此設計,即可透過控制該些閥243來控制第一坩鍋210之硒液體之液位。In one embodiment, the first crucible 210 may be provided with a plurality of openings, and the second open end 242 of the air tube 240 is connected to the openings through a plurality of valves 243, and the opening and closing of the valves 243 may be controlled. The openings are selectively communicated to the second open end 242 of the air tube 240. With this design, the liquid level of the selenium liquid of the first crucible 210 can be controlled by controlling the valves 243.
依據本發明一實施例,提供一種控制硒液位的方法,包含以下步驟。According to an embodiment of the invention, a method of controlling a selenium level is provided, comprising the following steps.
步驟S01:於第一坩鍋中融解硒,形成液態硒,其具有第一硒液位。Step S01: Melting selenium in the first crucible to form liquid selenium, which has a first selenium level.
步驟S02:於第二坩鍋中融解硒,形成液態硒,其具有第二硒液位高於該第一硒液位。Step S02: Melting selenium in the second crucible to form liquid selenium having a second selenium liquid level higher than the first selenium liquid level.
步驟S03:以一連通管由第一坩鍋內連通至第二坩鍋內,使第二坩鍋中的液態硒得以流入第一坩鍋中。Step S03: The liquid is separated from the first crucible into the second crucible by a connecting tube, so that the liquid selenium in the second crucible can flow into the first crucible.
步驟S04:以一氣管由該第一坩鍋的第一硒液位連接至該第二坩鍋的第二硒液位上方,並於該第二坩鍋的第二硒液位上方形成一密閉空間,使第一坩鍋中的第一硒液位上升到達氣管時,因大氣無法進入該第二硒液位上方而停止。Step S04: connecting a first selenium level of the first crucible to a second selenium level of the second crucible with a gas pipe, and forming a seal above the second selenium level of the second crucible The space, when the first selenium level in the first crucible rises to reach the trachea, stops because the atmosphere cannot enter above the second selenium level.
由於用於蒸鍍的蒸發機,通常是在極高溫的情況下,習知技術中,尚缺乏有效之控制金屬或非金屬融化於坩鍋中之液位的高度,尤其蒸鍍硒必須在大於300℃下進行,且硒對所有金屬的腐蝕性極強,因此習知技術無法控制其液位。依據本發明一實施例,能夠有效控制第一坩鍋210之金屬或非金屬液體之液位,並使液位維持在大致固定的高度,增加金屬或非金屬蒸鍍步驟的穩定,使蒸鍍後的膜厚度的差異較為均勻,提高產品之良率,且能夠達到自動控制,減少人工管控的成本。Due to the evaporation machine used for evaporation, usually in the case of extremely high temperature, in the prior art, there is still a lack of effective control of the height of the metal or non-metal melted in the crucible, especially the evaporation of selenium must be greater than It is carried out at 300 ° C, and selenium is extremely corrosive to all metals, so the prior art cannot control its liquid level. According to an embodiment of the invention, the liquid level of the metal or non-metal liquid of the first crucible 210 can be effectively controlled, and the liquid level can be maintained at a substantially fixed height, thereby increasing the stability of the metal or non-metal evaporation step, and evaporating After the film thickness difference is more uniform, the product yield is improved, and automatic control can be achieved, reducing the cost of manual control.
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。另外,本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本發明之權利範圍。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any embodiment or application of the invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.
10...CIGS薄膜太陽能電池10. . . CIGS thin film solar cell
100...硒蒸發機100. . . Selenium evaporator
11...玻璃基板11. . . glass substrate
110...坩鍋110. . . Shabu-shabu
111...硒液體111. . . Selenium liquid
112...硒蒸氣112. . . Selenium vapor
12...鉬金屬層12. . . Molybdenum metal layer
121...第一進氣管121. . . First intake pipe
122...第二進氣管122. . . Second intake pipe
123...排氣管123. . . exhaust pipe
13...銅鎵金屬層13. . . Copper gallium metal layer
131...裝載裝置131. . . Loading device
132...進料管132. . . Feed tube
14...銦金屬層14. . . Indium metal layer
140...液位感應器140. . . Liquid level sensor
15...硒層15. . . Selenium layer
16...CIGSe金屬層16. . . CIGSe metal layer
200...液位控制裝置200. . . Liquid level control device
210...第一坩鍋210. . . First shabu-shabu
220...第二坩鍋220. . . Second shabu-shabu
221...空間221. . . space
230...進料裝置230. . . Feeding device
240...氣管240. . . trachea
241...第一開口端241. . . First open end
242...第二開口端242. . . Second open end
243...閥243. . . valve
300...硒蒸發機300. . . Selenium evaporator
圖1A顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。Figure 1A shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell.
圖1B顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。Figure 1B shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell.
圖2A顯示一習知硒蒸發機之坩鍋及氣管間之結構的示意圖。Fig. 2A is a schematic view showing the structure between a crucible and a gas pipe of a conventional selenium evaporator.
圖2B顯示一習知硒蒸發機之坩鍋及進料(dosing)裝置間之結構的示意圖。Figure 2B shows a schematic diagram of the structure between a crucible and a dosing device of a conventional selenium evaporator.
圖3顯示依本發明一實施例之適用於硒蒸發機的液位控制裝置。Figure 3 shows a liquid level control device suitable for use in a selenium evaporator in accordance with an embodiment of the present invention.
圖4顯示依本發明一實施例之硒蒸發機其液位控制裝置及氣管間之結構的示意圖。4 is a schematic view showing the structure of a liquid level control device and a gas pipe of a selenium evaporator according to an embodiment of the present invention.
200...液位控制裝置200. . . Liquid level control device
210...第一坩鍋210. . . First shabu-shabu
220...第二坩鍋220. . . Second shabu-shabu
221...空間221. . . space
230...進料裝置230. . . Feeding device
240...氣管240. . . trachea
241...第一開口端241. . . First open end
242...第二開口端242. . . Second open end
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JPS62267468A (en) * | 1986-05-16 | 1987-11-20 | Mitsubishi Heavy Ind Ltd | Device for controlling molten metal level in vacuum evaporator |
TW200825192A (en) * | 2006-11-16 | 2008-06-16 | Yamagata Promotional Org Ind | Evaporation source and vacuum evaporator using the same |
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JPS62267468A (en) * | 1986-05-16 | 1987-11-20 | Mitsubishi Heavy Ind Ltd | Device for controlling molten metal level in vacuum evaporator |
TW200825192A (en) * | 2006-11-16 | 2008-06-16 | Yamagata Promotional Org Ind | Evaporation source and vacuum evaporator using the same |
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