TWI384496B - Preparation method of carbon nanotube conductive thin film - Google Patents

Preparation method of carbon nanotube conductive thin film Download PDF

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TWI384496B
TWI384496B TW97150219A TW97150219A TWI384496B TW I384496 B TWI384496 B TW I384496B TW 97150219 A TW97150219 A TW 97150219A TW 97150219 A TW97150219 A TW 97150219A TW I384496 B TWI384496 B TW I384496B
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carbon nanotube
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TW201025357A (en
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Nat Univ Chung Hsing
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奈米碳管導電薄膜的製造方法Method for manufacturing nano carbon tube conductive film

本發明是有關於一種導電薄膜的製造方法,特別是指一種奈米碳管導電薄膜的製造方法。The present invention relates to a method for producing a conductive film, and more particularly to a method for producing a carbon nanotube conductive film.

隨著液晶螢幕的廣泛應用與發展,透明導電材料的開發一直是熱門的研究主題,應用於顯示器與觸控面板的透明導電薄膜則應具備下列基本特性:(1)在可見光範圍的光透過率與導電率皆高,(2)須能被製為表面平滑的薄膜,且能承受電漿製程環境,(3)容易蝕刻,以形成預定的圖樣(pattern),(4)可大面積均勻化,(5)低生產成本,(6)無毒並能回收再生。氧化銦錫(indium tin oxide,簡稱為ITO)由於兼具低薄膜片電阻與可見光透光率在80%~90%的特性,已成為透明導電薄膜的最主要原料來源,然而ITO原料中的銦屬於稀有金屬,產量有限,造成供給不穩定及原料成本節節高升,因此,開發新的替代性材料已成為主要的課題。此外,針對近來業界積極投入的觸控式面板與可撓曲面板,由於ITO薄膜不夠柔軟,在使用上相對具有耐用性相對較差與可靠性相對較低的缺點。With the wide application and development of LCD screens, the development of transparent conductive materials has been a hot research topic. The transparent conductive films used in displays and touch panels should have the following basic characteristics: (1) Light transmittance in the visible range Both high conductivity and (2) must be made into a smooth surface film and can withstand the plasma process environment, (3) easy to etch to form a predetermined pattern, (4) large area uniformity (5) low production cost, (6) non-toxic and capable of recycling. Indium tin oxide (ITO) has the characteristics of low film resistance and visible light transmittance of 80% to 90%, and has become the most important source of transparent conductive film. However, indium in ITO raw materials. It is a rare metal, and the production is limited, resulting in unstable supply and high raw material costs. Therefore, the development of new alternative materials has become a major issue. In addition, the touch panel and the flexible panel which have been actively invested in the industry in recent years have disadvantages in that the ITO film is relatively soft and relatively durable in use and relatively low in reliability.

針對ITO的來源不足與其應用極限等問題,奈米碳管為近來研究開發出來的一種熱門的替代性材料,主要是鑑於奈米碳管材料有許多極優異的光、電、磁與機械特性,且其巨觀物性與化性和材料本身微觀的排列方式與數量有直接關係,而能影響到可應用的產品端,目前並已開發出可投入商業化應用的單壁奈米碳管(single-walled carbon nanotubes,簡稱為SWNT)導電薄膜。In view of the insufficient source of ITO and its application limit, nanocarbon tubes are a popular alternative material developed recently, mainly because of the excellent optical, electrical, magnetic and mechanical properties of nano carbon nanotube materials. Moreover, its macroscopic physical properties and chemical properties are directly related to the microscopic arrangement and quantity of the materials themselves, and can affect the applicable product end. At present, single-walled carbon nanotubes (single) that can be put into commercial application have been developed. -walled carbon nanotubes (referred to as SWNT) conductive film.

單壁式奈米碳管導電薄膜主要是採用濾膜法與噴灑法製成。其中,濾膜法是先以雷射法合成SWNT,並以高濃度的硝酸溶液酸洗後,將其加入含有特定界面活性劑的溶劑中形成奈米碳管溶液中,再以特定的濾紙過濾使該等奈米碳管停駐於濾紙表面形成奈米碳管濾膜,接著,將該奈米碳管濾膜貼至透明基板上,再利用丙酮除去濾紙部分,只留下奈米碳管,就能製得單壁式奈米碳管導電薄膜(“Transparent,Conductive Carbon Nanotube Films”,Z.Wu etc.,Science 2004 ,305,1273、”Effect of SOCl2 Treatment on Electrical and Mechanical Properties of Single-Wall Carbon Nanotube Networks”,U.Dettlaff-Weglikowska etc.,J. Am. Chem. Soc .,2005,127,5125-5131)。The single-walled carbon nanotube conductive film is mainly made by a filter method and a spray method. Among them, the filter method is to first synthesize SWNT by laser, pickle it with a high concentration of nitric acid solution, add it to a solvent containing a specific surfactant to form a carbon nanotube solution, and then filter it with a specific filter paper. The carbon nanotubes are parked on the surface of the filter paper to form a carbon nanotube membrane, and then the carbon nanotube membrane is attached to the transparent substrate, and the filter paper portion is removed by acetone, leaving only the carbon nanotubes. , a single-walled carbon nanotube conductive film ("Transparent, Conductive Carbon Nanotube Films", Z. Wu etc., Science 2004 , 305, 1273, "Effect of SOCl2 Treatment on Electrical and Mechanical Properties of Single- Wall Carbon Nanotube Networks", U. Dettlaff-Weglikowska et . , J. Am. Chem. Soc ., 2005, 127, 5125-5131).

以噴灑法製備單壁式奈米碳管導電薄膜的製造方法則是將預定量的單壁式奈米碳管加入並使其分散於含有特定界面活性劑的溶劑中形成奈米碳管溶液,將該奈米碳管溶液離心後,取溶液上層50%的部分噴灑於表面溫度維持在100℃的聚對苯二甲酸乙二酯(poly(ethylene terephthalate),簡稱為PET)基材上,接著,以去離子水清洗並烘乾,就能製得單壁式奈米碳管導電薄膜(“Effect of Acid Treatment on Carbon Nanotube-Based Flexible Transparent Conducting Films”,J. Am. Chem. Soc .,2007,129,7758-7759)。The method for preparing a single-walled carbon nanotube conductive film by spraying method is to add a predetermined amount of single-walled carbon nanotubes and disperse it in a solvent containing a specific surfactant to form a carbon nanotube solution. After centrifuging the carbon nanotube solution, a 50% portion of the upper layer of the solution was sprayed onto a poly(ethylene terephthalate, abbreviated as PET) substrate having a surface temperature maintained at 100 ° C. A single-walled carbon nanotube conductive film ("Effect of Acid Treatment on Carbon Nanotube-Based Flexible Transparent Conducting Films", J. Am. Chem. Soc ., 2007) can be obtained by washing and drying with deionized water. , 129, 7758-7759).

雖然學界與業界的積極研究開發,已發展出各種互有優劣的透明導電薄膜,而且其中的單壁式奈米碳管導電薄膜的製造技術也進入準備商業化的階段,並有可取代ITO薄膜的趨勢,但相關配套的製程技術並非短時間就能成功,為因應未來需求,並創造出更多更人性化的人機介面產品及軟性電子產品,有關觸控面板、可撓曲面板、透明電極等液晶顯示器的製程技術也將有所變革,其中,材料技術的成熟度將是關鍵的要素,因此,仍有持續開發不同類型的材料技術的需求,以提供更多元的選擇與應用,進而降低生產成本與發展出更精進的製程技術。Although the academic and industry's active research and development, has developed a variety of transparent conductive films, and the manufacturing technology of single-walled carbon nanotube conductive film has also entered the stage of commercialization, and can replace the ITO film. Trends, but the related process technology will not be successful in a short period of time, in response to future needs, and create more humane interface products and soft electronic products, related to touch panels, flexible panels, transparent The process technology of liquid crystal displays such as electrodes will also be changed. Among them, the maturity of material technology will be a key element. Therefore, there is still a need to continuously develop different types of material technologies to provide more choices and applications. In turn, the production cost is reduced and more advanced process technology is developed.

因此,本發明的目的,是在提供一種製程較簡化且成本相對較低的奈米碳管導電薄膜的製造方法。Accordingly, it is an object of the present invention to provide a method of manufacturing a carbon nanotube conductive film which is relatively simple in process and relatively low in cost.

於是,本發明奈米碳管導電薄膜的製造方法,包含下列步驟:Thus, the method for producing a carbon nanotube conductive film of the present invention comprises the following steps:

(i)配製一奈米碳管溶液,將預定量的奈米碳管組份加入一預定量的溶劑中調配成黏度值介於1~50c.p的奈米碳管溶液,且該奈米碳管組份具有多數個多層壁奈米碳管(multi-walled nanotubes,簡稱為MWNT);(i) preparing a carbon nanotube solution, adding a predetermined amount of the carbon nanotube component to a predetermined amount of solvent to prepare a carbon nanotube solution having a viscosity value of 1 to 50 c.p, and the nanometer The carbon tube component has a plurality of multi-walled nanotubes (MWNTs);

(ii)霧化,施加一超音波霧化頻率於該奈米碳管溶液,使該奈米碳管溶液霧化成多數個分散且挾帶有該等奈米碳管的霧化顆粒,並提供一攜帶氣體使該等霧化顆粒沿一預定路徑傳送,其中,該等霧化顆粒的粒徑是介於0.5μm~50μm;(ii) atomizing, applying an ultrasonic atomization frequency to the carbon nanotube solution, atomizing the carbon nanotube solution into a plurality of atomized particles dispersed and carrying the carbon nanotubes, and providing a carrier gas transporting the atomized particles along a predetermined path, wherein the atomized particles have a particle size of between 0.5 μm and 50 μm;

(iii)旋轉塗佈,將該等霧化顆粒引導至一放置有一基材片的基座上方,藉由旋轉該基座,使該等霧化顆粒均勻地塗佈於該基材片表面,進而形成一導電薄膜。(iii) spin coating, guiding the atomized particles onto a susceptor on which a substrate sheet is placed, and by rotating the susceptor, uniformly coating the atomized particles on the surface of the substrate sheet. Further, a conductive film is formed.

本發明的有益效果在於:以多層壁奈米碳管為導電薄膜的原料能有效減少原料成本,並能透過施加超音波使該奈米碳管溶液形成霧化顆粒,以利於該等奈米碳管被分散帶出,再配合旋轉塗佈方式,使該等奈米碳管能夠均勻地塗佈在該基材片表面形成導電薄膜,使本發明具有製程技術相對較簡便,並能節省製造成本的優點。The invention has the beneficial effects that the multi-layered wall carbon nanotube is used as the raw material of the conductive film to effectively reduce the raw material cost, and the nanocarbon tube solution can be formed into atomized particles by applying ultrasonic waves to facilitate the nano carbon. The tube is dispersed and brought out, and the spin coating method is adopted to enable the carbon nanotubes to be uniformly coated on the surface of the substrate sheet to form a conductive film, so that the process technology of the invention is relatively simple and can save manufacturing cost. The advantages.

有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之二個較佳實施例的詳細說明中,將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention.

參閱圖1與圖2,本發明奈米碳管導電薄膜的製造方法的一第一較佳實施例包含下列步驟:步驟101是純化,是分別以高濃度鹽酸溶液酸洗、沉澱法水洗及真空乾燥處理以純化一奈米碳管組份中的多數個多層壁奈米碳管,純化處理的主要目的在去除該等奈米碳管原料中的氧化鐵、不定型碳、表面官能基等附著或混摻在該等奈米碳管原料中的雜質,以提高多層壁奈米碳管的導電度,進而使該等奈米碳管能表現出較佳的光電特質。Referring to FIG. 1 and FIG. 2, a first preferred embodiment of the method for manufacturing a carbon nanotube conductive film of the present invention comprises the following steps: Step 101 is purification, which is respectively pickled with a high concentration hydrochloric acid solution, washed with a precipitation method, and vacuumed. Drying to purify a plurality of multi-walled carbon nanotubes in a carbon nanotube component, the main purpose of the purification treatment is to remove iron oxide, amorphous carbon, surface functional groups and the like in the raw materials of the carbon nanotubes. Or impurities mixed in the carbon nanotube raw materials to improve the conductivity of the multi-walled carbon nanotubes, thereby enabling the carbon nanotubes to exhibit better photoelectric properties.

步驟102是配製一奈米碳管溶液30,將1重量份的奈米碳管組份及1重量份的界面活性劑組份分別加入1000~1000000重量份的溶劑中調配成黏度值介於1~50c.p的奈米碳管溶液30,且該奈米碳管組份具有多數個多層壁奈米碳管。Step 102 is to prepare a carbon nanotube solution 30, and add 1 part by weight of the carbon nanotube component and 1 part by weight of the surfactant component to 1000 to 1,000,000 parts by weight of the solvent respectively to prepare a viscosity value of 1 ~50c.p of carbon nanotube solution 30, and the carbon nanotube component has a plurality of multi-layered wall carbon nanotubes.

該界面活性劑組份是用以防止該等多層壁奈米碳管聚集,且為一選自下列群組中的物質:醇之硫酸酯鹽(sulfated alcohol,通式為ROSO3 - M+ )、烷基磺酸鹽(alkylsulfonate,通式為RSO3 - M+ )、α-烯烴磺酸鹽(alpha-olefinsulphonate,簡稱為AOS,通式為RCH=CH(CH2 )n -SO3 M)、第四級銨鹽(Quaternary ammonium salt,通式為)、環氧乙烷系(亦稱聚乙二醇系,polyoxyethylene,簡稱為POE)、聚氧乙烯烷基醚(又稱為脂肪醇聚氧乙烯醚、醚醇,alcohol ethoxylate,簡稱為AE,通式為RO(CH2 CH2 O)n H),及其等之組合。The surfactant component is for preventing the aggregation of the multi-walled nanotubes, and is a substance selected from the group consisting of a sulfated alcohol (ROSO 3 - M + ) , alkylsulfonate (formula RSO 3 - M + ), α-olefin sulfonate (alpha-olefinsulphonate, abbreviated as AOS, of the formula RCH=CH(CH 2 ) n -SO 3 M) Quaternary ammonium salt ), ethylene oxide (also known as polyethylene glycol, polyoxyethylene, POE for short), polyoxyethylene alkyl ether (also known as fatty alcohol polyoxyethylene ether, ether alcohol, alcohol ethoxylate, referred to as AE, The formula is RO(CH 2 CH 2 O) n H), and combinations thereof.

較佳地,該界面活性劑為一選自下列群組中的物質:C4 ~C18 之直鏈烷基磺酸鈉(通式為RSO3 - Na+ )、C4 ~C18 之直鏈烷基磺酸鉀(通式為RSO3 - K+ )、C4 ~C18 之直鏈烷基硫酸鈉(通式為ROSO3 - Na+ )、C4 ~C18 之直鏈烷基硫酸鉀(通式為ROSO3 - K+ )、C4 ~C18 之直鏈烷基苯磺酸鈉(通式為RC6 H4 SO3 - Na+ )、C4 ~C18 之直鏈烷基苯磺酸鉀(通式為RC6 H4 SO3 - K+ )、C4 ~C18 之直鏈烷基苯硫酸鈉(通式為ROC6 H4 SO3 - Na+ )、C4 ~C18 之直鏈烷基苯硫酸鉀(通式為ROC6 H4 SO3 - K+ )、C2 ~C16 之直鏈烷基四級銨鹽、α-烯烴磺酸鹽(簡稱為AOS,通式為RCH=CH(CH2 )n -SO3 M,其中,n=14~16,且M為鹼金族離子)、烷基為C2 ~C16 之聚氧乙烯烷基醚(簡稱為AE,通式為RO(CH2 CH2 O)n H,n=5~30),及其等之組合。藉此,可達到較佳的分散效果,在本實施例中,是選用十二烷基磺酸鈉(sodium dodecyl sulfate,簡稱為SDS)作為該界面活性劑。Preferably, the surfactant is a substance selected from the group consisting of sodium C 4 ~ C 18 linear alkyl sulfonate (formula RSO 3 - Na + ), C 4 ~ C 18 straight Potassium alkane sulfonate (formula RSO 3 - K + ), linear alkyl sodium sulfate of C 4 ~ C 18 (formula of ROSO 3 - Na + ), linear alkyl group of C 4 ~ C 18 Potassium sulfate (formula of ROSO 3 - K + ), sodium C 4 ~ C 18 linear alkylbenzene sulfonate (formula RC 6 H 4 SO 3 - Na + ), linear chain of C 4 ~ C 18 Potassium alkylbenzene sulfonate (formula RC 6 H 4 SO 3 - K + ), linear C 4 -C 18 linear alkyl benzene sulphate (formula: ROC 6 H 4 SO 3 - Na + ), C 4 to C 18 linear alkyl benzene sulfate (formula: ROC 6 H 4 SO 3 - K + ), C 2 to C 16 linear alkyl quaternary ammonium salt, α-olefin sulfonate (abbreviation is the AOS, the formula RCH = CH (CH 2) n -SO 3 M, where, n = 14 ~ 16, and M is an alkali metal ion group), alkyl polyoxyethylene alkyl is a C 2 ~ C 16 of Ether (abbreviated as AE, the formula is RO(CH 2 CH 2 O) n H, n=5~30), and combinations thereof. Thereby, a better dispersion effect can be achieved. In the present embodiment, sodium dodecyl sulfate (SDS) is selected as the surfactant.

其中,該溶劑為一選自下列群組中的液體:水、乙醇、異丙醇及丙酮。配製時,於溶劑中添加該多層壁奈米碳管組份與該界面活性劑後,可先以功率750W的探頭式超音波震盪分散器(機型:Sonics & Materials,Inc.「SONICSVCX750」)對該MWNT溶液以20%功率作用5分鐘,及30%功率作用5分鐘,以防止該等多層壁奈米碳管聚集並呈均勻分散的狀態。Wherein the solvent is a liquid selected from the group consisting of water, ethanol, isopropanol and acetone. In the preparation, after adding the multi-layered wall carbon nanotube component and the surfactant to the solvent, the probe type ultrasonic oscillating disperser with a power of 750W can be used first (model: Sonics & Materials, Inc. "SONICS VCX750") The MWNT solution was applied at 20% power for 5 minutes and 30% power for 5 minutes to prevent the multi-walled nanotubes from collecting and being uniformly dispersed.

步驟103是霧化,施加一超音波霧化頻率於該奈米碳管溶液30,使該奈米碳管溶液30霧化成多數個分散且挾帶有該等奈米碳管的霧化顆粒31,並提供一攜帶氣體32使該等霧化顆粒31沿一預定路徑傳送。其中,該奈米碳管溶液30是盛裝於一霧化容器33中,且該溶液30的液面是藉由一虹吸管34維持在固定高度,藉此,使產生該超音波頻率的超音波元件35恆位於液面下固定深度處,以控制該溶液液面所承受的能量固定,及所產生的霧化顆粒31的粒徑能維持一致。其中,該虹吸管34是連接在該霧化容器33與一貯液容器38之間,該貯液容器38是置於一升降座39上,以受其連動而上下位移,並能藉此控制該霧化容器33中的液面高度。較佳地,為了使流到該貯液容器38的奈米碳管溶液30中的奈米碳管仍然能維持分散狀態,通常會在該貯液溶器38中再加裝一探頭式超音波震盪分散器(圖未示)持續對回流到該貯液容器38的溶液作用。Step 103 is atomization, applying an ultrasonic atomization frequency to the carbon nanotube solution 30, and atomizing the carbon nanotube solution 30 into a plurality of atomized particles 31 dispersed with the carbon nanotubes. And carrying a carrier gas 32 to transport the atomized particles 31 along a predetermined path. Wherein, the carbon nanotube solution 30 is contained in an atomizing container 33, and the liquid level of the solution 30 is maintained at a fixed height by a siphon tube 34, thereby generating an ultrasonic component of the ultrasonic frequency. 35 is constant at a fixed depth below the liquid surface to control the energy of the liquid level of the solution to be fixed, and the particle size of the atomized particles 31 produced can be maintained consistently. The siphon tube 34 is connected between the atomization container 33 and a liquid storage container 38. The liquid storage container 38 is placed on a lifting seat 39 to be vertically displaced by the linkage thereof, and can thereby control the The liquid level in the atomizing container 33. Preferably, in order to maintain the dispersed state of the carbon nanotubes flowing into the carbon nanotube solution 30 of the liquid storage container 38, a probe type ultrasonic wave is usually added to the liquid storage device 38. An oscillating disperser (not shown) continues to act on the solution that is returned to the reservoir 38.

較佳地,該超音波霧化頻率為20KHz~2.45MHz,在本實施例中則是採用1.65MHz的超音波霧化頻率(在本實施例中所用的超音波霧化器的機型為:普崴電子Pro-Wave Electronic Corp M165D25、M165D20),而該等霧化顆粒31的粒徑則是介於0.5μm~50μm,且較佳是介於2μm~7μm,在本實施例中,則是配合超音波霧化頻率使該等霧化顆粒31的粒徑實質上維持在3μm左右。Preferably, the ultrasonic atomization frequency is 20 kHz to 2.45 MHz, and in this embodiment, the ultrasonic atomization frequency of 1.65 MHz is used (the ultrasonic atomizer used in the embodiment is: Pro-Wave Electronic Corp M165D25, M165D20), and the particle size of the atomized particles 31 is between 0.5 μm and 50 μm, and preferably between 2 μm and 7 μm. In this embodiment, The particle diameter of the atomized particles 31 is substantially maintained at about 3 μm in accordance with the ultrasonic atomization frequency.

為了符合所要求的粒徑大小,可透過下列公式推算該超音波的頻率範圍,以較快速地調整到所要求的霧化顆粒31尺寸:In order to meet the required particle size, the frequency range of the ultrasonic wave can be estimated by the following formula to adjust to the required atomized particle size 31 more quickly:

其中,D為霧化顆粒的粒徑,T為表面張力係數(N/cm),ρ為溶液密度(g/cm3 ),f為超音波霧化頻率(Hz),及α為0.34的常數值。(Ultrasonics Volume 22,Issue 6,November 1984,Pages 259-260)Where D is the particle size of the atomized particles, T is the surface tension coefficient (N/cm), ρ is the solution density (g/cm 3 ), f is the ultrasonic atomization frequency (Hz), and α is 0.34. Value. (Ultrasonics Volume 22, Issue 6, November 1984, Pages 259-260)

較佳地,該攜帶氣體32的流速為1L/min~200L/min,在本實施例中,該攜帶氣體32的流速則是設定為22L/min,且該攜帶氣體32為氮氣。Preferably, the flow rate of the carrier gas 32 is from 1 L/min to 200 L/min. In the present embodiment, the flow rate of the carrier gas 32 is set to 22 L/min, and the carrier gas 32 is nitrogen.

步驟104是旋轉塗佈,將該等霧化顆粒31引導至一放置有一基材片36的基座37上方,藉由旋轉該基座37,使該等霧化顆粒31均勻地塗佈於該基材片36表面,進而形成一導電薄膜。Step 104 is spin coating, and the atomized particles 31 are guided onto a susceptor 37 on which a substrate sheet 36 is placed. By rotating the susceptor 37, the atomized particles 31 are uniformly coated on the substrate. The surface of the substrate sheet 36 forms a conductive film.

進行旋轉途佈時,該基座37是先經一次濕潤旋轉塗佈與一次初步成膜旋轉塗佈的預處理,再重複進行多次周期性的再成膜旋轉塗佈,且在該再成膜旋轉塗佈中是依序經由一低速轉速、一中速轉速及一高速轉速的周期變換旋轉,且該低速、中速與高速的轉速比率為2~3:3~6:8~40。在本實施例中,該低速轉速較佳為300~450r.p.m.,該中速轉速較佳是控制在450~900r.p.m.,及該高速轉速較佳是1200~6000r.p.m.。其中,進行濕潤旋轉塗佈的轉速為300r.p.m與450r.p.m.相交替數次,進行初步成膜旋轉塗佈的轉速則為自450r.p.m.依階梯式上升到6000r.p.m.後,再進入周期性的再成膜旋轉。When the rotating cloth is rotated, the susceptor 37 is pre-treated by one wet spin coating and one preliminary film spin coating, and then repeated periodic re-filming spin coating is repeated, and the repulsion is repeated. In the film spin coating, the rotation is sequentially performed through a cycle of a low speed, a medium speed, and a high speed, and the ratio of the low speed, the medium speed, and the high speed is 2 to 3:3 to 6:8 to 40. In this embodiment, the low speed is preferably 300 to 450 r.p.m., and the medium speed is preferably controlled at 450 to 900 r.p.m., and the high speed is preferably 1200 to 6000 r.p.m. Among them, the rotational speed of the wet spin coating is 300r.pm and 450r.pm alternately, and the rotational speed of the preliminary film spin coating is from 450r.pm to 6000r.pm, and then enters the cycle. Sexual re-filming rotation.

步驟105是熱壓,是於預定溫度下對設置有該導電薄膜的基材片36施加預定壓力,用以使該導電薄膜被壓密緊實並形成較緻密穩定的結構,及使該等多層壁奈米碳管之間形成較緊密的連結,而有助於降低該導電薄膜的表面電阻,使該導電薄膜能夠表現更佳的導電度。Step 105 is hot pressing, applying a predetermined pressure to the substrate sheet 36 provided with the conductive film at a predetermined temperature for compacting and compacting the conductive film to form a denser and stable structure, and making the plurality of layers The tight junction between the wall carbon nanotubes helps to reduce the surface resistance of the conductive film, so that the conductive film can exhibit better conductivity.

較佳地,進行熱壓時是於溫度50℃~110℃下施加1~200kg/cm2 的壓力熱壓30秒~30分鐘,在本實施例中則是在溫度70℃下,施加100kg/cm2 的壓力進行熱壓30分鐘,但不應以此限制熱壓時間,通常熱壓越久,導電性會越佳,但熱壓超過30分鐘後導電性的提升反而不顯著,所以熱壓時間宜控制在30分鐘以內。Preferably, when hot pressing is performed, a pressure of 1 to 200 kg/cm 2 is applied at a temperature of 50 ° C to 110 ° C for 30 seconds to 30 minutes, and in the present embodiment, 100 kg / is applied at a temperature of 70 ° C. The pressure of cm 2 is hot pressed for 30 minutes, but this should not limit the hot pressing time. Generally, the longer the hot pressing, the better the conductivity, but the increase in conductivity after hot pressing for more than 30 minutes is not significant, so the hot pressing time Should be controlled within 30 minutes.

步驟106是清洗,是將具有導電薄膜的基材片36先置於去離子水中潤洗5~30分鐘,並浸泡2小時換水,重複5次,再浸泡乙醇2小時,再於溫度60℃下抽真空,藉此可去除殘留在該導電薄膜中的界面活性劑,以免殘留雜質造成該導電薄膜的導電度降低。清洗完成並乾燥後,就能製得結合在該基材片36上的多層壁奈米碳管導電薄膜成品。Step 106 is cleaning. The substrate sheet 36 having a conductive film is firstly rinsed in deionized water for 5 to 30 minutes, and soaked for 2 hours for water exchange, repeated 5 times, and then soaked in ethanol for 2 hours, and then at a temperature of 60 ° C. A vacuum is applied, whereby the surfactant remaining in the conductive film can be removed to prevent the residual impurities from causing a decrease in the conductivity of the conductive film. After the cleaning is completed and dried, the finished multilayered carbon nanotube conductive film bonded to the substrate sheet 36 can be obtained.

<具體例><Specific example>

(1)純化1g的多層壁奈米碳管(MWNT):先配製6M的濃鹽酸溶液250ml,再將1g的MWNT投入該鹽酸溶液中,並攪拌24小時,再以沉澱法連續地水洗6次,接著,再重新配製6M鹽酸250ml,再以前述的酸洗及水洗方式繼續純化MWNT,如此重覆三次,純化完成的MWNT分別在溫度80℃,12小時及溫度250℃,24小時的條件下進行真空乾燥,再置入氮氣烘箱中以溫度400℃烘乾。(1) Purification of 1 g of multi-layered wall carbon nanotubes (MWNT): first prepare 250 ml of 6 M concentrated hydrochloric acid solution, then put 1 g of MWNT into the hydrochloric acid solution, stir for 24 hours, and then continuously wash 6 times by precipitation. Then, reconstitute 250 ml of 6M hydrochloric acid, and then continue to purify MWNT by the above-mentioned pickling and washing, so that the MWNT is purified three times at a temperature of 80 ° C, 12 hours and a temperature of 250 ° C for 24 hours. It was vacuum dried and placed in a nitrogen oven to dry at a temperature of 400 °C.

(2)配置10mg/L的MWNT水溶液:於1L的去離子水中投入10mg的MWNT及10mg的SDS,可先以功率750W的探頭式超音波震盪分散器(機型:Sonics & Materials,Inc.「SONICSVCX750」)對該MWNT溶液以20%功率作用5分鐘,及30%功率作用5分鐘,以防止該等多層壁奈米碳管聚集並呈均勻分散的狀態。(2) Configure 10mg/L MWNT aqueous solution: Put 10mg MWNT and 10mg SDS in 1L deionized water, first use the probe 750W ultrasonic shock diffuser (model: Sonics & Materials, Inc. SONICS VCX750") The MWNT solution was applied at 20% power for 5 minutes and 30% power for 5 minutes to prevent the multi-walled nanotubes from collecting and being uniformly dispersed.

(3)霧化:將超音波霧化器置於液面下3.0cm的深度處,並使溶液的溫度維持在30℃,提供1.65MHz的超音波霧化頻率作用於該奈米碳管溶液,則可達到25~30ml/hr的霧化率,且霧化顆粒的粒徑約為3μm,利用一與盛裝MWNT溶液的容器相連通的輸氣管送入攜帶氣體,該攜帶氣體的流速為22L/min。(3) Atomization: The ultrasonic atomizer is placed at a depth of 3.0 cm below the liquid surface, and the temperature of the solution is maintained at 30 ° C, and an ultrasonic atomization frequency of 1.65 MHz is provided to act on the carbon nanotube solution. , the atomization rate of 25~30ml/hr can be achieved, and the particle size of the atomized particles is about 3μm, and the carrier gas is fed into the gas pipe connected with the container containing the MWNT solution, and the flow rate of the carrier gas is 22L. /min.

(4)旋轉塗佈:該攜帶氣體將該等霧化顆粒引導到一旋轉塗佈機的基座上,於該基座上放置的基材片是與該基座同步旋轉,進行旋轉塗佈前,該基材片是先於500r.p.m.的轉速下以去離子水清洗40秒,再於800r.p.m.的轉速下以酒精清洗60秒,再進行該等超音波霧化顆粒的旋轉塗佈。(4) spin coating: the carrier gas guides the atomized particles onto a susceptor of a spin coater, and the substrate sheet placed on the susceptor is rotated synchronously with the susceptor for spin coating Before, the substrate sheet was washed with deionized water for 40 seconds at a speed of 500 rpm, and then washed with alcohol at a speed of 800 rpm for 60 seconds, and then spin coating of the ultrasonic atomized particles. .

進行超音波霧化顆粒的旋轉塗佈時,是先經一次濕潤旋轉塗佈與一次初步成膜旋轉塗佈的預處理,再重複進行多次周期性的再成膜旋轉塗佈。其中,進行濕潤旋轉塗佈的轉速為300r.p.m與450r.p.m.相交替數次,進行初步成膜旋轉塗佈的轉速則為自450r.p.m.依階梯式上升到6000r.p.m.後,再進入周期性的再成膜旋轉塗佈。塗佈進行的過程中,該基座是以如圖5所示的階段式周期進行連續旋轉,且區間(I)表示濕潤旋轉塗佈的轉速變化,區間(II)表示初步成膜旋轉塗佈的階梯式轉速變化,區間(III)、(IV)、(V)皆為再成膜旋轉塗佈的階梯式轉速變化,藉此,使該等霧化顆粒能較均勻地塗佈至該基材片表面,且能透過旋轉塗佈的時間長短控制該導電薄膜的成膜厚度。在圖5中,不同階段別分別以不同字母表示,並將其所代表的轉速與時間整理如下表1,表1中各階段的時間不應受限,可再依實際需求進行調整。When the spin coating of the ultrasonic atomized particles is performed, the pretreatment is performed by one wet spin coating and one preliminary film spin coating, and the periodic recoating spin coating is repeated a plurality of times. Among them, the rotational speed of the wet spin coating is 300r.pm and 450r.pm alternately, and the rotational speed of the preliminary film spin coating is from 450r.pm to 6000r.pm, and then enters the cycle. Sex re-filming spin coating. During the coating process, the susceptor is continuously rotated in a staged cycle as shown in FIG. 5, and the interval (I) represents the change in the rotational speed of the wet spin coating, and the interval (II) represents the preliminary film forming spin coating. The stepwise speed change, the sections (III), (IV), and (V) are all stepwise rotational speed changes of the re-filming spin coating, thereby enabling the atomized particles to be uniformly applied to the base. The surface of the sheet is controlled, and the film thickness of the conductive film can be controlled by the length of the spin coating. In Fig. 5, the different stages are respectively represented by different letters, and the rotation speed and time represented by them are arranged as shown in Table 1 below. The time of each stage in Table 1 should not be limited, and can be adjusted according to actual needs.

旋轉塗佈的時間是控制在10分鐘~60分鐘,以藉由控制旋轉塗佈的時間讓所形成的多層壁奈米碳管導電薄膜能達到設計的規格,其中,主要是藉由調整c~f的時間來調整導電薄膜的厚度。The spin coating time is controlled from 10 minutes to 60 minutes to control the spin coating time to achieve the design specifications of the multilayered nano-carbon nanotube conductive film, which is mainly by adjusting c~ The time of f is used to adjust the thickness of the conductive film.

(5)熱壓:將一熱壓機的上下壓模的溫度升溫至70℃,並維持恆溫1小時,並將溫度的上下變動控制在±0.25℃以下,裁剪四片5cm×5cm的PET薄片,並分別以去離子水、乙醇、去離子水、丙酮、去離子水的清洗順序潤洗該等PET薄片,再以上下各二片的方式夾住已設置有該導電薄膜的基材片,再取10cm×10cm的不銹鋼夾具上下疊合於PET薄片外,並將組合完成的基材片、PET薄片與不銹鋼夾具一起置於該熱壓機的上下壓模之間,並施加100kg/cm2 的壓力熱壓30分鐘。(5) Hot pressing: the temperature of the upper and lower stampers of a hot press is raised to 70 ° C, and the temperature is maintained for 1 hour, and the temperature fluctuation is controlled below ± 0.25 ° C, and four pieces of 5 cm × 5 cm PET sheets are cut. And rinsing the PET sheets in a cleaning sequence of deionized water, ethanol, deionized water, acetone, and deionized water, respectively, and sandwiching the substrate sheets on which the conductive film is disposed, in the manner of two sheets above, Then, a stainless steel jig of 10 cm×10 cm was placed on top of the PET sheet, and the combined substrate sheet, PET sheet and stainless steel jig were placed between the upper and lower stampers of the hot press, and 100 kg/cm 2 was applied. The pressure is hot pressed for 30 minutes.

(6)清洗:以前述步驟106所述的方式清洗熱壓完成的導電薄膜基材片,就能製得該多層壁奈米碳管導電薄膜。(6) Cleaning: The multi-layered wall carbon nanotube conductive film can be obtained by washing the hot-pressed conductive film substrate sheet in the manner described in the above step 106.

<耐曲撓性測試><Flexibility test>

參閱圖6,將所製得的附有導電薄膜的基材片裁成1cm×2cm的試片51,並量測該試片51未受彎折前的導電度。接著,將該試片51較長邊的二相反側分別固定至一固定夾座52,及一與該固定夾座51相間隔的活動夾座53之間,再使該活動夾座53靠向該固定夾座51位移至該試片51長邊的二相反側的間距為1cm,再進一步位移到該試片51長邊的二相反側的間距為0.5cm為止,該試片51會隨著該活動夾座53的活動而曲撓彎折,接著,再使該活動夾座53遠離該固定夾座52位移,並使該試片51回復為平直狀態,量測該試片51受彎折後的片電阻,重複前述使該試片51曲撓彎折的動作,且該試片51每次回復到平直狀態後都再測一次片電阻,藉由片電阻的變化可相應地反應出導電度的變化,片電阻值越穩定顯示導電度也較穩定。Referring to Fig. 6, the prepared substrate sheet with the conductive film was cut into a test piece 51 of 1 cm × 2 cm, and the conductivity of the test piece 51 before being bent was measured. Then, the opposite sides of the longer side of the test piece 51 are respectively fixed to a fixed clip 52, and a movable clip 53 spaced apart from the fixed clip 51, and the movable clip 53 is biased toward the opposite side. The fixing clip 51 is displaced to the opposite side of the long side of the test piece 51 by a distance of 1 cm, and further displaced to a distance of 0.5 cm on the opposite side of the long side of the test piece 51, the test piece 51 will follow The movement of the movable clamp 53 is bent and bent, and then the movable clamp 53 is displaced away from the fixed clamp 52, and the test piece 51 is returned to a flat state, and the test piece 51 is measured to be bent. The folded sheet resistance repeats the above-described operation of flexing and bending the test piece 51, and the test piece 51 is again measured once after returning to the flat state, and the sheet resistance can be correspondingly reacted by the change of the sheet resistance. The change in conductivity, the more stable the sheet resistance value, the more stable the conductivity.

分別在一PET基材表面形成奈米碳管導電薄膜(以CNT/PET表示),及在另一PET基材上形成ITO薄膜(以ITO/PET表示),再分別將CNT/PET、ITO/PET皆裁剪為如前所述尺寸的試片分別進行耐曲撓性測試,其中,ITO/PET試片的未受曲撓前的原始片電阻為ITO/PET≒120Ω/□,(其中,□=cm2 ,即Ω/□=Ω/cm2 )、CNT/PET≒100Ω/□,由於前面幾次的曲撓,會使ITO/PET與CNT/PET的片電阻皆呈不穩定的變化,無法作明確的比較,因此,先分別將ITO/PET與CNT/PET的試片各折彎50次使其片電阻(導電度)穩定後,再正式進入耐曲撓性測試。其中,折彎50次後穩定的片電阻值分別為ITO/PET≒5KΩ/□,CNT/PET≒3KΩ/□,測試結果如下表所示,其中,表1中的曲撓次數並未包含預先折彎50次的次數:A carbon nanotube conductive film (indicated by CNT/PET) is formed on the surface of a PET substrate, and an ITO film (indicated by ITO/PET) is formed on another PET substrate, and CNT/PET, ITO/ respectively. PET is cut to the test piece of the above-mentioned size for the flexural resistance test. The original sheet resistance of the ITO/PET test piece before the untwisted is ITO/PET≒120Ω/□, (where □ =cm 2 , ie Ω/□=Ω/cm 2 ), CNT/PET≒100Ω/□, the sheet resistance of ITO/PET and CNT/PET will be unstable due to the previous several bends. It is impossible to make a clear comparison. Therefore, the test pieces of ITO/PET and CNT/PET are each bent 50 times to stabilize the sheet resistance (conductivity), and then the flexural resistance test is officially entered. Among them, the sheet resistance values after stabilization for 50 times are ITO/PET≒5KΩ/□, CNT/PET≒3KΩ/□, and the test results are shown in the following table. The number of bends in Table 1 does not include the advance. Number of bends 50 times:

測試結果顯示CNT/PET試片曲撓100次後的片電阻上升10%,曲撓250次後的片電阻上升20%,曲撓500次後的片電阻上升20%,與ITO/PET相同曲撓次數後的片電阻相較,顯示其片電阻的上升比率較小,並可據此推知其導電度的下降比率也會小於ITO/PET的導電度變化,顯示本發明的導電薄膜具有較佳的耐曲撓性。The test results show that the sheet resistance of the CNT/PET specimen after bending 100 times is increased by 10%, the sheet resistance after twisting 250 times is increased by 20%, and the sheet resistance after bending for 500 times is increased by 20%, which is the same as that of ITO/PET. Compared with the sheet resistance after the number of deflections, the increase ratio of the sheet resistance is small, and it can be inferred that the ratio of decrease in conductivity is also smaller than that of ITO/PET, indicating that the conductive film of the present invention is preferable. Flexibility.

<同一製備條件所製出的不同試片的再現性量測><Reproducibility measurement of different test pieces produced under the same preparation conditions>

依<具體例>的條件分別製作5片試片,並分測量不同波長光線的穿透率,可得到如圖7所示的結果,曲線編號61~65分別代表5片不同試片的量測結果,由該曲線圖可看出,每一個試片所測得的曲線形狀類似,且極接近,顯示本發明的製造方法具有極佳的再現性。According to the conditions of <specific example>, five test pieces were respectively prepared, and the transmittances of light of different wavelengths were measured, and the results shown in Fig. 7 were obtained, and the curve numbers 61 to 65 respectively represent the measurement of five different test pieces. As a result, it can be seen from the graph that the shape of the curve measured for each of the test pieces is similar and extremely close, showing that the manufacturing method of the present invention has excellent reproducibility.

配合形成圖7圖形的數值,分別取波長350nm、400nm、450nm、500nm、550nm處的透光率(%T)計算編號61~65的各試片在特定波長(即350nm、400nm、450nm、500nm、550nm)下的算術平均偏差。計算公式如下:With reference to the numerical values of the graphs of FIG. 7, the transmittances at wavelengths of 350 nm, 400 nm, 450 nm, 500 nm, and 550 nm (%T) were calculated at specific wavelengths (ie, 350 nm, 400 nm, 450 nm, 500 nm). The arithmetic mean deviation at 550 nm). Calculated as follows:

算術平均偏差: Arithmetic mean deviation:

其中,表示在特定波長下,編號61~65試片的算術平均偏差值,X為編號61~65試片在特定波長的透光率(%T),為編號61~65試片在特定波長的平均透光率值,n為試片數量(在此n=5)。among them, Indicates the arithmetic mean deviation of the number 61~65 test piece at a specific wavelength, and X is the light transmittance (%T) of the test piece at a specific wavelength of the number 61~65. The average transmittance value of the test piece numbered 61-65 at a specific wavelength, and n is the number of test pieces (here n=5).

計算結果顯示該等試片在特定波長下的透光率的算術平均偏差值低於0.5%T,顯示本發明的製造方法所製出的導電薄膜的在特定波長下的透光率的平均偏差可控制在0.5%T以下,而具有極佳的再現性。The calculation results show that the arithmetic mean deviation of the transmittance of the test pieces at a specific wavelength is less than 0.5% T, which shows the average deviation of the transmittance of the conductive film produced by the manufacturing method of the present invention at a specific wavelength. It can be controlled below 0.5% T with excellent reproducibility.

<同一樣品的膜厚均勻性量測><Measurement of film thickness uniformity of the same sample>

參閱圖8,依<具體例>的條件及步驟製備導電薄膜試片,在同一試片內任意指定三個不同位置的區域71、72、73,分別量測這三個區域71、72、73不同波長光波的穿透率,結果如圖8所示,顯示該試片不同區域所量測得的波長-穿透率曲線幾乎重合,顯示該試片不同位置的穿透率情形一致,並能藉此推測其膜厚相同,顯示本發明所製得的導電薄膜試片具有較佳的膜厚均勻性。Referring to FIG. 8, a conductive thin film test piece is prepared according to the conditions and steps of <Specific Example>, and three different positions 71, 72, and 73 are arbitrarily designated in the same test piece, and the three areas 71, 72, and 73 are respectively measured. The transmittance of light waves of different wavelengths, as shown in FIG. 8, shows that the wavelength-transmittance curves measured in different regions of the test piece almost coincide, showing that the transmittances of different positions of the test piece are consistent and can From this, it is presumed that the film thickness is the same, and it is shown that the conductive film test piece produced by the present invention has a preferable film thickness uniformity.

分別在30nm~800nm取特定波長比較同一試片在相同波長下的的透光率(%T)值,並計算其算術平均偏差,以確認同一試片在不同位置的透光率平均偏差值。計算公式如下:The transmittance (%T) of the same test piece at the same wavelength was taken at a specific wavelength of 30 nm to 800 nm, and the arithmetic mean deviation was calculated to confirm the average deviation value of the transmittance of the same test piece at different positions. Calculated as follows:

算術平均偏差: Arithmetic mean deviation:

其中,表示在特定波長下,同一試片中編號71~73區域的算術平均偏差值,X為編號71~73區域在特定波長的透光率(%T),為編號71~73區域在特定波長的平均透光率值,n為取樣區域數量(在此n=3)。among them, Indicates the arithmetic mean deviation of the number 71 to 73 in the same test piece at a specific wavelength, and X is the transmittance (%T) of the region at the specific wavelength of the number 71 to 73. The average transmittance value at a specific wavelength for the number 71 to 73, and n is the number of sampling regions (here n=3).

計算結果顯示同一試片不同區域在特定波長下的透光率的算術平均偏差值低於0.3%T,顯示同一樣品在不同區域的透光率值相一致,並可據此推知同一樣品不同區域的膜厚均勻性良好。The calculation results show that the arithmetic mean deviation of the transmittance of different regions of the same test piece at a specific wavelength is less than 0.3% T, which shows that the transmittance values of the same sample in different regions are consistent, and the different regions of the same sample can be inferred accordingly. The film thickness uniformity is good.

<在不同旋轉塗佈時間下,550nm波長光線的穿透率變化及電阻變化><Transmission change and resistance change of light at 550 nm wavelength at different spin coating times>

依<具體例>的條件,分別製得旋轉塗佈5、15、30、45、60、120分鐘的導電薄膜試片各三片,並分別量測每一試片在550nm波長光線的穿透率及片電阻。再將相同旋轉塗佈時間所製得的試片所測得的值取平均值,所測得的結果可整理如表2,分別以旋轉塗佈時間為橫座標,穿透率為縱座標作成圖9,及以旋轉塗佈時間為橫座標,所測得的片電阻值經log運算後的值作為縱座標作成圖10。According to the conditions of <Specific Example>, three sheets of conductive thin film strips were spin-coated for 5, 15, 30, 45, 60, and 120 minutes, respectively, and the penetration of each test piece at 550 nm wavelength was measured. Rate and sheet resistance. Then, the values measured by the test piece prepared by the same spin coating time are averaged, and the measured results can be arranged as shown in Table 2, respectively, with the spin coating time as the abscissa and the penetration rate as the ordinate. Fig. 9 and the rotational coating time as the abscissa, and the measured value of the sheet resistance value after log calculation is plotted as an ordinate.

理論上,當旋轉塗佈時間越長,塗佈於該基材片上的霧化顆粒越多,使最終所形成的導電薄膜的厚度也越厚,因此,參閱圖9與圖10,量測結果也顯示,旋轉塗佈時間越長所製得的導電薄膜在550nm波長的光線下的穿透率也會逐漸減少,此外,該導電薄膜的電阻值也會隨著膜厚的增加而降低,顯示膜厚增加有較佳的導電性,但特定波長的光穿透率會減少,一般可供應用的導電薄膜的片電阻值規格範圍是在10~800Ω/cm2 ,一般觸控式面板所用導電薄膜的片電阻規格則在200~800Ω/cm2 ,顯示本發明所製出的導電薄膜的片電阻值已符合應用規格。本發明所製出的奈米碳管導電薄膜在同樣範圍的片電阻值所對應的光穿透率為65%~90%,與一般可供應用的導電薄膜的550nm的光穿透率規格70%~90%相較,顯示本發明製造方法所製得的奈米碳管導電薄膜已具有實際應用的價值。Theoretically, the longer the spin coating time, the more atomized particles coated on the substrate sheet, and the thicker the thickness of the finally formed conductive film. Therefore, referring to FIG. 9 and FIG. 10, the measurement results are obtained. It is also shown that the longer the spin coating time, the lower the transmittance of the conductive film under the light of 550 nm wavelength, and the resistance value of the conductive film also decreases as the film thickness increases, the display film The increase in thickness has better conductivity, but the transmittance of light at a specific wavelength is reduced. The sheet resistance of a conductive film that is generally applicable is in the range of 10 to 800 Ω/cm 2 , and the conductive film used in a general touch panel. The sheet resistance specification is in the range of 200 to 800 Ω/cm 2 , and it is shown that the sheet resistance value of the electroconductive film produced by the present invention has met the application specifications. The carbon nanotube conductive film produced by the invention has a light transmittance corresponding to a sheet resistance of 65% to 90% in the same range, and a light transmittance of 550 nm of a conductive film which is generally applicable. Compared with %~90%, it is shown that the carbon nanotube conductive film prepared by the manufacturing method of the invention has practical application value.

參閱圖3與圖4,為本發明奈米碳管導電薄膜的製造方法一第二較佳實施例,並包含下列步驟:步驟201是純化該奈米碳管組份中的該等多層壁奈米碳管。Referring to FIG. 3 and FIG. 4, a second preferred embodiment of the method for manufacturing a carbon nanotube conductive film of the present invention comprises the following steps: Step 201 is to purify the multi-layered wall in the carbon nanotube component. Carbon tube.

步驟202是配製一奈米碳管溶液40,將1重量份的的奈米碳管組份加入1000~1000000重量份的溶劑中調配成黏度值介於1~50c.p.的奈米碳管溶液,該奈米碳管組份與該溶劑的用量比例,及可用的溶劑種類與該第一較佳實施例步驟102所述者相同,故不再贅述,主要差別在於在該第二較佳實施例中的奈米碳管溶液40中未添加界面活性劑。Step 202 is to prepare a carbon nanotube solution 40, and add 1 part by weight of the carbon nanotube component to 1000 to 1,000,000 parts by weight of a solvent to prepare a carbon nanotube having a viscosity value of 1 to 50 c.p. The solution, the ratio of the amount of the carbon nanotube component to the solvent, and the type of solvent that can be used are the same as those described in the step 102 of the first preferred embodiment, and therefore will not be described again. The main difference lies in the second preferred. No surfactant was added to the carbon nanotube solution 40 in the examples.

步驟203是超音波震盪分散,是利用相連通的一分散容器41及一霧化容器42,將步驟202所配製的奈米碳管溶液加入該分散容器41,並對該分散容器41中的奈米碳管溶液40施加一超音波震盪分散,以防止該奈米碳管溶液40中的該等奈米碳管聚集,以藉由超音波震盪能量提供如同添加界面活性劑的效果,接著,受震盪作用後的奈米碳管溶液40再自該分散容器中經由一虹吸管46陸續地流入該霧化容器42中。Step 203 is ultrasonic oscillating dispersion. The carbon nanotube solution prepared in step 202 is added to the dispersion container 41 by using a dispersion container 41 and an atomization container 42 connected to each other, and the dispersion container 41 is disposed in the dispersion container 41. The carbon nanotube solution 40 is applied with an ultrasonic oscillating dispersion to prevent the carbon nanotubes in the carbon nanotube solution 40 from agglomerating to provide an effect of adding a surfactant by ultrasonic oscillating energy, and then The oscillating carbon nanotube solution 40 then flows continuously from the dispersion vessel into the atomization vessel 42 via a siphon 46.

其中,提供震盪分散作用的超音波分散器43為探頭式超音波震盪分散器(機型:Sonics & Materials,Inc.「SONICSVCX750」),其作用功率較佳為750W,且是對該奈米碳管溶液以20%功率作用5分鐘,及30%功率作用5分鐘。Among them, the ultrasonic disperser 43 providing the oscillating dispersion is a probe type ultrasonic oscillating disperser (model: Sonics & Materials, Inc. "SONICS VCX750"), its working power is preferably 750W, and it acts on the carbon nanotube solution at 20% power for 5 minutes, and 30% power for 5 minutes.

值得說明的是,在步驟202配製該奈米碳管溶液40時,也可以再添加界面活性劑,再輔以步驟203的超音波震盪分散處理,則可促進該等奈米碳管具有更佳的分散效果。It should be noted that when the carbon nanotube solution 40 is prepared in step 202, the surfactant may be further added, and the ultrasonic vibration dispersion treatment in step 203 may be used to promote the carbon nanotubes. The dispersion effect.

需要補充說明的是,若配置不含界面活性劑的MWNT溶液時,由於經超音波震盪分散後,該等奈米碳管呈分散狀態一段時間後會再聚集,通常分散性可維持20秒~30秒,所以會配置濃度相對較低的MWNT溶液,例如,2mg/L的MWNT溶液,再藉由該虹吸管46將已受震盪處理的溶液陸續地引導至該霧化容器42中。當該MWNT溶液是以超音波震盪的方式達到分散的效果時,由於所用的MWNT溶液濃度較低,經超音波霧化後,進行旋轉塗佈的時間也相對延長為15分鐘~120分鐘。It should be added that if the MWNT solution containing no surfactant is disposed, after the ultrasonic vibration is dispersed, the carbon nanotubes will re-aggregate after being dispersed for a period of time, and the dispersion can be maintained for 20 seconds. For 30 seconds, a relatively low concentration MWNT solution, for example, a 2 mg/L MWNT solution, is then placed, and the oscillated solution is successively directed into the atomizing container 42 by the siphon 46. When the MWNT solution achieves the dispersion effect by means of ultrasonic vibration, the spin coating time is relatively extended from 15 minutes to 120 minutes due to the low concentration of the MWNT solution used.

步驟204是霧化,對被引導流入該霧化容器42內的奈米碳管溶液40施加超音波霧化頻率,以使該奈米碳管溶液40霧化成多數個分散且挾帶有該等奈米碳管的霧化顆粒44,並提供一攜帶氣體45使該等霧化顆粒沿一路徑傳送,超音波頻率的參數及其與該等霧化顆粒44的粒徑的關係與第一較佳實施例步驟103的內容相同,故不再贅述。Step 204 is atomization, applying an ultrasonic atomization frequency to the carbon nanotube solution 40 guided into the atomization container 42 to atomize the carbon nanotube solution 40 into a plurality of dispersions and carrying the same The carbon nanotubes atomize the particles 44 and provide a carrier gas 45 to transport the atomized particles along a path. The parameters of the ultrasonic frequency and their relationship with the particle size of the atomized particles 44 are compared with the first The content of step 103 of the preferred embodiment is the same, and therefore will not be described again.

其中,是利用連接在該霧化容器42與該分散容器41之間的虹吸管46,使多餘的奈米碳管溶液40流到該分散容器41中,達到該霧化容器42中的奈米碳管溶液40被維持在一預定高度的目的。Wherein, the excess carbon nanotube solution 40 is flowed into the dispersion container 41 by using a siphon 46 connected between the atomization container 42 and the dispersion container 41 to reach the nanocarbon in the atomization container 42. The tube solution 40 is maintained for a predetermined height.

步驟205為旋轉塗佈、步驟206為熱壓及步驟207為清洗,其進行方式與參數條件是分別與該第一較佳實施例的步驟104、105與106相同,故不再贅述。Step 205 is spin coating, step 206 is hot pressing, and step 207 is cleaning. The manner and parameter conditions are the same as steps 104, 105 and 106 of the first preferred embodiment, respectively, and therefore will not be described again.

歸納上述,本發明奈米碳管導電薄膜的製造方法,可獲致下述的功效及優點,故能達到本發明的目的:In summary, the method for producing a carbon nanotube conductive film of the present invention can attain the following effects and advantages, thereby achieving the object of the present invention:

一、藉由提供特定的超音波頻率使奈米碳管溶液形成霧化顆粒,再透過攜帶氣體使其塗佈於一旋轉的基材片上,就能製得厚度均勻的導電薄膜,相對於已有研究發表的噴槍法、噴墨印表機的噴墨法、浸鍍法或過濾膜製備等技術,或目前業界普遍採用的ITO導電膜的物理濺鍍法(sputtering),本發明能以容易取得的設備及較簡便的製程達到製出奈米碳管導電薄膜的結果,而具有可降低製造成本的優點及可供商業化應用的價值。1. By providing a specific ultrasonic frequency to form the atomized particles of the carbon nanotube solution, and then applying the gas to the rotating substrate sheet, a conductive film having a uniform thickness can be obtained. The invention can be easily sprayed by a spray gun method, an ink jet method of an ink jet printer, a immersion plating method or a filter film preparation technique, or a physical sputtering method of an ITO conductive film which is generally used in the industry. The obtained equipment and the relatively simple process achieve the result of producing a carbon nanotube conductive film, and have the advantages of reducing the manufacturing cost and the value for commercial application.

二、可利用旋轉塗佈的時間長短控制最終所製得的導電薄膜的厚度,以對應製造出不同穿透率與不同電阻規格的導電薄膜,使本發明製造方法能以較簡單的控制方式調整製品的品質,以搭配不同等級的應用產品使用。Second, the thickness of the conductive film finally obtained can be controlled by the length of the spin coating to correspondingly produce conductive films with different transmittances and different resistance specifications, so that the manufacturing method of the present invention can be adjusted in a relatively simple control manner. The quality of the products is used in conjunction with different grades of application products.

三、由耐曲撓性測試的結果說明以本發明製造方法所製得的導電薄膜經多次曲撓後,其導電度仍然符合所要求的應用規格,使本發明製造方法能夠製得具有較佳耐曲撓性的導電薄膜。3. The results of the flexural resistance test show that the conductive film prepared by the manufacturing method of the present invention has a plurality of flexural properties, and the electrical conductivity thereof still meets the required application specifications, so that the manufacturing method of the present invention can be produced. Good resistance flexible conductive film.

四、利用本發明的製造方法,能夠以成本相對較低的多層壁奈米碳管為原料製出符合業界規格的導電薄膜產品,同樣具有可降低製造成本的優點。Fourth, by using the manufacturing method of the present invention, it is possible to produce a conductive film product conforming to industry specifications by using a relatively low cost multi-layered wall carbon nanotube as a raw material, and has the advantage of reducing manufacturing cost.

惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

30...奈米碳管溶液30. . . Nano carbon tube solution

31...霧化顆粒31. . . Atomized particle

32...攜帶氣體32. . . Carrying gas

33...霧化容器33. . . Atomizing container

34...虹吸管34. . . siphon

35...超音波元件35. . . Ultrasonic component

36...基材片36. . . Substrate sheet

37...基座37. . . Pedestal

38...貯液容器38. . . Liquid container

39...升降座39. . . Lifting seat

40...奈米碳管溶液40. . . Nano carbon tube solution

41...分散容器41. . . Dispersed container

42...霧化容器42. . . Atomizing container

43...超音波分散器43. . . Ultrasonic diffuser

44...霧化顆粒44. . . Atomized particle

45...攜帶氣體45. . . Carrying gas

46...虹吸管46. . . siphon

51...導電薄膜試片51. . . Conductive film test piece

52...固定夾座52. . . Fixed clamp

53...活動夾座53. . . Activity holder

圖1是一說明本發明奈米碳管導電薄膜的製造方法一第一較佳實施例的流程圖;1 is a flow chart showing a first preferred embodiment of a method for producing a carbon nanotube conductive film of the present invention;

圖2是一示意圖,說明在該第一較佳實施例中所使用的裝置的組合情形;Figure 2 is a schematic view showing the combination of the devices used in the first preferred embodiment;

圖3是一說明本發明奈米碳管導電薄膜的製造方法一第二較佳實施例的流程圖;Figure 3 is a flow chart showing a second preferred embodiment of the method for producing a carbon nanotube conductive film of the present invention;

圖4是一示意圖,說明在該第二較佳實施例中所使用的裝置的組合情形;Figure 4 is a schematic view showing the combination of the devices used in the second preferred embodiment;

圖5是一曲線示意圖,說明該第一較佳實施例進行旋轉塗佈時,不同時間所設定轉速的變化情形;Figure 5 is a schematic view showing the change of the rotational speed set at different times during the spin coating of the first preferred embodiment;

圖6是一示意圖,說明以本發明製造方法所製出的導電薄膜試片進行曲撓性測試的過程;Figure 6 is a schematic view showing the process of conducting a flexural test on the conductive film test piece produced by the manufacturing method of the present invention;

圖7是一曲線圖,說明在本發明製造方法所製出的不同導電薄膜試片的穿透率變化曲線;Figure 7 is a graph showing the transmittance change curve of different conductive film test pieces produced by the manufacturing method of the present invention;

圖8是一曲線圖,說明在本發明製造方法所製出的一導電薄膜試片上的不同位置的穿透率變化曲線;Figure 8 is a graph showing the change in transmittance at different positions on a conductive film test piece produced by the manufacturing method of the present invention;

圖9是一曲線圖,說明本發明製造方法不同旋轉塗佈時間所製出的導電薄膜試片的穿透率的變化情形;及Figure 9 is a graph showing changes in the transmittance of a conductive film test piece produced by different spin coating times of the manufacturing method of the present invention;

圖10是一曲線圖,說明本發明製造方法不同旋轉塗佈時間所製出的導電薄膜試片的片電阻的變化情形。Fig. 10 is a graph showing changes in sheet resistance of a conductive thin film test piece produced by the spin coating time of the manufacturing method of the present invention.

Claims (27)

一種奈米碳管導電薄膜的製造方法,包含下列步驟:(i)配製一奈米碳管溶液,將預定量的奈米碳管組份加入一預定量的溶劑中調配成黏度值介於1~50c.p的奈米碳管溶液,且該奈米碳管組份具有多數個多層壁奈米碳管;(ii)霧化,施加一超音波霧化頻率於該奈米碳管溶液,使該奈米碳管溶液霧化成多數個分散且挾帶有該等奈米碳管的霧化顆粒,並提供一攜帶氣體使該等霧化顆粒沿一預定路徑傳送,其中,該等霧化顆粒的粒徑是介於0.5μm~50μm;(iii)旋轉塗佈,將該等霧化顆粒引導至一放置有一基材片的基座上方,藉由旋轉該基座,使該等霧化顆粒均勻地塗佈於該基材片表面,進而形成一導電薄膜。A method for manufacturing a carbon nanotube conductive film, comprising the steps of: (i) preparing a carbon nanotube solution, adding a predetermined amount of carbon nanotube components to a predetermined amount of solvent to prepare a viscosity value of 1 ~50c.p of carbon nanotube solution, and the carbon nanotube component has a plurality of multi-walled carbon nanotubes; (ii) atomization, applying an ultrasonic atomization frequency to the carbon nanotube solution, The carbon nanotube solution is atomized into a plurality of atomized particles dispersed and carrying the carbon nanotubes, and a carrier gas is provided to transport the atomized particles along a predetermined path, wherein the atomization The particle size of the particles is between 0.5 μm and 50 μm; (iii) spin coating, directing the atomized particles onto a susceptor on which a substrate sheet is placed, and rotating the susceptor to atomize the particles The particles are uniformly coated on the surface of the substrate sheet to form a conductive film. 依據申請專利範圍第1項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(i)中,該溶劑為一選自下列群組中的液體:水、乙醇、異丙醇及丙酮。The method for producing a carbon nanotube conductive film according to claim 1, wherein in the step (i), the solvent is a liquid selected from the group consisting of water, ethanol, isopropanol and acetone. 依據申請專利範圍第2項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(i)中,該奈米碳管溶液還具有一預定量的界面活性劑組份,且該界面活性劑組份是用以防止該奈米碳管組份中的多層壁奈米碳管聚集。The method for producing a carbon nanotube conductive film according to claim 2, wherein in the step (i), the carbon nanotube solution further has a predetermined amount of a surfactant component, and the interface The active agent component is used to prevent aggregation of the multi-walled nanotubes in the carbon nanotube component. 依據申請專利範圍第3項所述的奈米碳管導電薄膜的製造方法,其中,該界面活性劑組份為一選自下列群組中的物質:醇之硫酸酯鹽、烷基磺酸鹽、α-烯烴磺酸鹽、第四級銨鹽、環氧乙烷系、聚氧乙烯烷基醚,及其等之組合。The method for producing a carbon nanotube conductive film according to claim 3, wherein the surfactant component is a substance selected from the group consisting of a sulfate salt of an alcohol and an alkyl sulfonate. , a-olefin sulfonate, a fourth ammonium salt, an ethylene oxide system, a polyoxyethylene alkyl ether, and combinations thereof. 依據申請專利範圍第4項所述的奈米碳管導電薄膜的製造方法,其中,該界面活性劑組份為一選自於下列群組中的物質:C4 ~C18 之直鏈烷基磺酸鈉、C4 ~C18 之直鏈烷基磺酸鉀、C4 ~C18 之直鏈烷基硫酸鈉、C4 ~C18 之直鏈烷基硫酸鉀、C4 ~C18 之直鏈烷基苯磺酸鈉、C4 ~C18 之直鏈烷基苯磺酸鉀、C4 ~C18 之直鏈烷基苯硫酸鈉、C4 ~C18 之直鏈烷基苯硫酸鉀、C2 ~C16 之直鏈烷基四級銨鹽、α-烯烴磺酸鹽、烷基為C2 ~C16 之聚氧乙烯烷基醚,及其等之組合。The method for producing a carbon nanotube conductive film according to claim 4, wherein the surfactant component is a substance selected from the group consisting of C 4 to C 18 linear alkyl groups. sodium, potassium linear alkyl sulfonate of C 4 ~ C 18 straight-chain alkyl sulfate of C 4 ~ C 18 straight-chain alkyl sulfate of C 4 ~ C 18, C 4 ~ C 18 of linear alkylbenzene sulfonate, C linear alkylbenzene sulfonate, potassium 4 ~ C 18, the linear alkyl benzene sulfate of C 4 ~ C 18 straight-chain C 4 ~ C 18 alkyl sulfate of Potassium, C 2 -C 16 linear alkyl quaternary ammonium salts, α-olefin sulfonates, alkyl groups are C 2 -C 16 polyoxyethylene alkyl ethers, and combinations thereof. 依據申請專利範圍第5項所述的奈米碳管導電薄膜的製造方法,其中,該界面活性劑組份是選自於十二烷基磺酸鈉。The method for producing a carbon nanotube conductive film according to claim 5, wherein the surfactant component is selected from sodium dodecyl sulfate. 依據申請專利範圍第2項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(ii)中,該超音波霧化頻率為20KHz~2.45MHz。The method for producing a carbon nanotube conductive film according to claim 2, wherein in the step (ii), the ultrasonic atomization frequency is 20 kHz to 2.45 MHz. 依據申請專利範圍第7項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(ii)中,該超音波霧化頻率為1.65MHz。The method for producing a carbon nanotube conductive film according to claim 7, wherein in the step (ii), the ultrasonic atomization frequency is 1.65 MHz. 依據申請專利範圍第7項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(ii)中,該等霧化顆粒的粒徑是2μm~7μm。The method for producing a carbon nanotube conductive film according to claim 7, wherein in the step (ii), the atomized particles have a particle diameter of 2 μm to 7 μm. 依據申請專利範圍第9項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(ii)中,該等霧化顆粒的粒徑實質上是3μm。The method for producing a carbon nanotube conductive film according to claim 9, wherein in the step (ii), the atomized particles have a particle diameter of substantially 3 μm. 依據申請專利範圍第10項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(i)中,該奈米碳管溶液具有1重量份的界面活性劑組份、1重量份的奈米碳管組份,及1000~1000000重量份的溶劑。The method for producing a carbon nanotube conductive film according to claim 10, wherein in the step (i), the carbon nanotube solution has 1 part by weight of a surfactant component, and 1 part by weight The carbon nanotube component, and 1000 to 1,000,000 parts by weight of the solvent. 依據申請專利範圍第11項所述的奈米碳管導電薄膜的製造方法,還包含一在步驟(iii)之後的步驟(iv),步驟(iv)是清洗,用以去除殘留在該導電薄膜中的界面活性劑。The method for producing a carbon nanotube conductive film according to claim 11, further comprising a step (iv) after the step (iii), wherein the step (iv) is cleaning for removing the residual conductive film. The surfactant in the medium. 依據申請專利範圍第12項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(iv)中,是將具有該導電薄膜的基材片先置於去離子水中潤洗5~30分鐘,並浸泡2小時換水,重複5次,再浸泡乙醇2小時,再於溫度60℃下抽真空12小時。The method for producing a carbon nanotube conductive film according to claim 12, wherein in the step (iv), the substrate sheet having the conductive film is firstly rinsed in deionized water 5 to 30. Minutes, and soaked for 2 hours for water change, repeated 5 times, then soaked in ethanol for 2 hours, and then vacuumed at a temperature of 60 ° C for 12 hours. 依據申請專利範圍第1項所述的奈米碳管導電薄膜的製造方法,還包含一在步驟(i)與步驟(ii)之間的步驟(a),步驟(a)是超音波震盪分散,是分別提供相連通的一分散容器及一霧化容器,並分別對位於該霧化容器中的奈米碳管溶液施加該超音波霧化頻率,以使該奈米碳管溶液霧化,及對該分散容器中的奈米碳管溶液施加一超音波震盪分散,以防止該奈米碳管溶液中的該等奈米碳管聚集,且該攜帶氣體是通入該霧化容器中以將該等霧化顆粒引導至步驟(iii)的該基座處,該奈米碳管溶液是先在該分散容器中受超音波震盪分散作用後,再被引導流入該霧化容器中接受該超音波霧化頻率作用。 The method for producing a carbon nanotube conductive film according to claim 1, further comprising a step (a) between the step (i) and the step (ii), wherein the step (a) is ultrasonic vibration dispersion Providing a dispersion container and an atomization container respectively connected to each other, and respectively applying the ultrasonic atomization frequency to the carbon nanotube solution located in the atomization container to atomize the carbon nanotube solution. And applying an ultrasonic oscillating dispersion to the carbon nanotube solution in the dispersion container to prevent the carbon nanotubes from accumulating in the carbon nanotube solution, and the carrier gas is introduced into the atomization container Directing the atomized particles to the base of step (iii), the carbon nanotube solution is firstly subjected to ultrasonic wave dispersion in the dispersion container, and then guided into the atomization container to receive the Ultrasonic atomization frequency action. 依據申請專利範圍第14項所述的奈米碳管導電薄膜的製造方法,其中,該超音波震盪是由作用功率為700W的超音波分散器提供,且是對該奈米碳管溶液以20%功率作用5分鐘,及30%功率作用5分鐘。 The method for manufacturing a carbon nanotube conductive film according to claim 14, wherein the ultrasonic oscillation is provided by an ultrasonic disperser having a power of 700 W, and the carbon nanotube solution is 20 The % power is applied for 5 minutes and the 30% power is applied for 5 minutes. 依據申請專利範圍第15項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(ii)中,該等霧化顆粒的粒徑是2μm~7μm。 The method for producing a carbon nanotube conductive film according to claim 15, wherein in the step (ii), the atomized particles have a particle diameter of 2 μm to 7 μm. 依據申請專利範圍第16項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(ii)中,該等霧化顆粒的粒徑實質上是3μm。 The method for producing a carbon nanotube conductive film according to claim 16, wherein in the step (ii), the atomized particles have a particle diameter of substantially 3 μm. 依據申請專利範圍第17項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(i)中,該奈米碳管溶液具有1重量份的界面活性劑組份、1重量份的奈米碳管組份,及1000~1000000重量份的溶劑。 The method for producing a carbon nanotube conductive film according to claim 17, wherein in the step (i), the carbon nanotube solution has 1 part by weight of a surfactant component and 1 part by weight. The carbon nanotube component, and 1000 to 1,000,000 parts by weight of the solvent. 依據申請專利範圍第9項或第16項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(ii)中,該攜帶氣體的流速為1 L/min~200 L/min。 The method for producing a carbon nanotube conductive film according to claim 9 or claim 16, wherein in the step (ii), the flow rate of the carrier gas is from 1 L/min to 200 L/min. 依據申請專利範圍第19項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(ii)中,該攜帶氣體的流速實質上為22 L/min。 The method for producing a carbon nanotube conductive film according to claim 19, wherein in the step (ii), the flow rate of the carrier gas is substantially 22 L/min. 依據申請專利範圍第20項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(iii)中,進行旋轉塗佈時,該基座是先經一次濕潤旋轉塗佈與一次初步成膜旋轉塗佈的 預處理,再進行至少一次周期性的再成膜旋轉塗佈,且在該再成膜旋轉塗佈中是依序經由一低速轉速、一中速轉速及一高速轉速的周期變換旋轉,且該低速、中速與高速轉速的比率為2~3:3~6:8~40。 The method for producing a carbon nanotube conductive film according to claim 20, wherein, in the step (iii), when the spin coating is performed, the susceptor is first subjected to a wet spin coating and a preliminary formation. Film spin coating Pre-treating, performing at least one periodic re-filming spin coating, and sequentially rotating the cycle through a low-speed rotation speed, a medium-speed rotation speed, and a high-speed rotation speed in the re-filming rotary coating, and The ratio of low speed, medium speed and high speed speed is 2~3:3~6:8~40. 依據申請專利範圍第21項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(iii)中,該低速轉速為300~450 r.p.m.,該中速轉速為450~900 r.p.m.,及該高速轉速為1200~6000 r.p.m.。 The method for producing a carbon nanotube conductive film according to claim 21, wherein in the step (iii), the low speed is 300 to 450 rpm, and the medium speed is 450 to 900 rpm, and The high speed is 1200~6000 rpm. 依據申請專利範圍第22項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(iii)中,進行濕潤旋轉塗佈的轉速為300 r.p.m與450r.p.m.相交替數次,進行初步成膜旋轉塗佈的轉速則為自450 r.p.m.依階梯式上升到6000r.p.m.後,再進入周期性的再成膜旋轉塗佈。 The method for producing a carbon nanotube conductive film according to claim 22, wherein in the step (iii), the rotational rotation coating is performed at a number of revolutions of 300 rpm and 450 rpm for several times. The rotational speed of film-forming spin coating is stepped up to 6000 rpm from 450 rpm, and then enters a periodic re-filming spin coating. 依據申請專利範圍第23項所述的奈米碳管導電薄膜的製造方法,還包含一在步驟(i)之前的步驟(b),步驟(b)是純化多層壁奈米碳管,是分別經高濃度鹽酸溶液酸洗、沉澱法水洗及真空乾燥處理以純化該等多層壁奈米碳管。 The method for producing a carbon nanotube conductive film according to claim 23, further comprising a step (b) before the step (i), wherein the step (b) is to purify the multi-walled carbon nanotubes, which are respectively The multi-walled carbon nanotubes are purified by pickling with a high concentration hydrochloric acid solution, washing with a precipitation method, and vacuum drying. 依據申請專利範圍第12項或第13項所述的奈米碳管導電薄膜的製造方法,其中,還包含一介於步驟(iii)與步驟(iv)之間的步驟(c),步驟(c)是熱壓,是於預定溫度下對設置有該導電薄膜的基材片施加預定壓力,用以使該導電薄膜被壓密緊實。 The method for producing a carbon nanotube conductive film according to claim 12 or 13, further comprising a step (c) between the step (iii) and the step (iv), the step (c) It is a hot press which applies a predetermined pressure to a substrate sheet provided with the electroconductive film at a predetermined temperature for compacting and compacting the electroconductive film. 依據申請專利範圍第25項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(c)中,是於溫度50℃~110℃下施加1~200kg/cm2 的壓力熱壓30秒~30分鐘。The method for producing a carbon nanotube conductive film according to claim 25, wherein in the step (c), a pressure hot pressing of 1 to 200 kg/cm 2 is applied at a temperature of 50 ° C to 110 ° C. Seconds ~ 30 minutes. 依據申請專利範圍第26項所述的奈米碳管導電薄膜的製造方法,其中,在步驟(c)中,是於溫度70℃下,施加壓力100kg/cm2 進行熱壓。The method for producing a carbon nanotube conductive film according to claim 26, wherein in the step (c), a pressure of 100 kg/cm 2 is applied at a temperature of 70 ° C for hot pressing.
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