TWI384478B - Minute structure and information recording medium - Google Patents

Description

Microstructure and information recording media

The present invention relates to microstructures and write-once (WORM, or write once many times) information recording media.

Recently, research and development of microstructures having sizes ranging from nanometers to micrometers have been carried out in many fields, including: ultramicrophotonics, high density recording media, optical components, and biochemical wafers. A device that is indispensable for such devices using optoelectronics is optically transparent in the visible range and has little optical loss. For this reason, this research and development of technologies for producing microstructures from transparent materials is actively carried out.

Zinc oxide is optically transparent in the visible range and has the property of absorbing ultraviolet light. Zinc oxide is used for, for example, a light-emitting diode, a transparent transistor, an ultraviolet light cutting material, an electrophotography, and the like.

Examples of the method of forming the zinc oxide include: a sputtering method, an ion plating method (refer to Japanese Laid-Open Patent Application No. 2006-117462), and a thermal decomposition of a precursor (refer to Japanese Laid-Open Patent Application No. 2007-022851) ).

Generally, any such electron beam exposure system, ion beam exposure system, and stepwise exposure system can be used when producing quantum lines, dots, etc. having a one-dimensional or two-degree spatial periodic microstructure. However, such exposure systems require expensive vacuum sources and their manufacturing costs become high. For this reason, it is desirable to implement simple patterning at a low cost and to make a periodic microstructure.

If the periodic structure in which the microstructure is regularly arranged is illuminated by light, a unique phenomenon such as a photonic band effect is produced. It is expected that the application of this periodic structure to the use of ray resonance or photons includes: optical waveguides, optical filters, optical switches, low critical lasers, and the like. However, it is known that the periodic structure in which the microstructures are regularly arranged at intervals smaller than the sub-wavelength is used for: by a structure called a moth-eye structure (refer to OPTICAL REVIEW, No. 2, 2003, Vol. 10, Pages 63-73) Prevents Fresnel reflections and displays non-reflective features.

On the other hand, in the field of biotechnology, it is strongly required to use a microstructure as a DNA wafer in which molecules are selectively combined with atoms. DNA wafers allow genes to be present, which can be easily studied for disease reasons and used in the study of genes and diagnosis of diseases.

A DNA wafer is usually composed of a thin substrate of ruthenium or glass. The gene for disease causes is composed of deoxyribonucleic acid (DNA) and adheres to a DNA wafer. If the blood obtained by the patient and the treated blood is dripped on the DNA wafer, and the gene for the cause of the disease is present in the blood, the DNA in the blood adheres to the DNA of the DNA wafer. Therefore, it can be easily judged whether or not the patient is ill. If the behavior of the gene is studied, early detection of the disease and prediction of the side effects of the drug can be obtained. In the medical field, this demand for genetic screening is growing rapidly.

Furthermore, with regard to metal microstructures that are regularly arranged in a two-dimensional shape, it may be desirable to have an application arrangement that uses surface plasmon exciton excitation and light-molecule interaction.

This is the use of existing methods of generating microstructures and periodic structures in which microstructures are regularly configured: optical lithography in semiconductor microfabrication techniques. Since the existing method requires an expensive electron beam lithography system, it has a problem of high cost. However, the size of the microstructures made here depends on the performance of the manufacturing equipment.

On the other hand, masks are made and this prior method has the advantage that it is suitable for mass production. However, it is not suitable for simple circuit design when the specification changes and the simple experiment in the experimental stage.

This is also a known method which uses 2-photon absorption by laser light to produce a three-dimensional spatial microstructure or a three-dimensional spatial light crystal (refer to Japanese Laid-Open Patent Application Nos. 2003-001599 and 2005-122002). However, such manufacturing requires a lot of time, and the materials used are limited by the resin which can be produced by photopolymerization. For this reason, a simple and inexpensive method is needed to create a microstructure that can further improve resource savings.

There is a conventional method of forming an inverse structure of a microstructure or a periodic structure in which a microstructure which is regularly arranged using an embossing process including injection molding is used. In recent years, ultra-micro printing technology has been developed which accurately shifts the inverse structure of ultra-micro-sized structures. This ultra-micro printing technique using photopolymerization or thermal polymerization can produce a reverse structure of the main mode with high enough accuracy, and it is suitable for mass production. When an inverse structure is used as the light crystal, different effects are generated from the main model.

In recent years, attention has been paid to thermolithography as a low-cost treatment method that is more cost effective than microfabrication techniques using photolithography. Thermography is a microfabrication technique that uses the principle that when the endothermic layer is heated (when the layer acts as a light absorbing layer when illuminated by laser light), the characteristics of the heated portion (light transmission) , refractive index, electrical conductivity, chemical corrosion resistance, etc.). The temperature distribution of the region illuminated by the light is converted into a Gaussian distribution, wherein the area of the high temperature region in the center of the distribution is about 1/10 of the area of the spot, and only the characteristics of the area are changed, and therefore, the micropattern can be manufactured.

Japanese Laid-Open Patent Application No. 2005-158191 discloses a method of manufacturing an optical recording medium, comprising: at least one step of stacking a first dielectric layer, a light absorbing layer, and a second dielectric layer on a support substrate layer by layer a step of emitting laser light to record information; and a step of removing the unrecorded region of the second dielectric layer by wet etching to form a recessed portion of the second dielectric layer.

In a method disclosed in Japanese Laid-Open Patent Publication No. 2005-158191, the concave portion of the second dielectric layer formed has a rectangular or inverted tapered shape, and since the etching resistance is only in the heat distribution ( The Gaussian distribution increases in the vicinity of the maximum value, and the size of the concave portion is smaller than the diffraction limit of light. Moreover, the etching resistance of the second dielectric layer on the light absorbing layer that absorbs the laser light is improved, and a convex portion is formed. However, since there are many uses for removing the light absorbing layer, it is required to form a convex portion without forming a light absorbing layer. Moreover, there is also a problem that when a concave portion is formed in the second dielectric layer, the terminal portion of the concave portion becomes rough.

In recent years, an optical element having a sub-wavelength structure or a fine structure of a photocrystal has been demanded. The application of such fine structures is not limited to optical components. For example, an organic electroluminescence (OEL) display or an organic light emitting diode display (OLED) is a new generation of light emitting display using an organic composite. When compared with a conventional display, the light emitted by the LED is bright and clear, the viewing angle is large, the display is thin, and its operating temperature range is wide. This LED was observed as a display with outstanding characteristics. Furthermore, this is known to improve the luminous efficiency of OLEDs by combining them with a two-dimensional spatial light crystal structure. For example, please refer to "M. Fujita, T. Ueno, T. Asano, S. Noda, H. Ohata, T. Tsuji, H. Nakada and N. Shimoji, Electronic Journal, 2003, Vol. 39, 1750 Page, "Y. Lee, S. Kim, J. Huh, G. Kim and Y. Lee, Journal of Applied Physics, 2003, Vol. 82, p. 3779", "M. Kitamura, S. Iwamoto and Y Arakawa, Journal of Applied Physics, 2005, Vol. 44, p. 2844, "K. Ishihara, M. fujita, I. Matsubara, T. Asano and S. Noda, Journal of Applied Physics, 2006, pp. Volume 45, No. 7, page L210", and "M. Fujita, K. Ishihara, T. Ueno, T. Asano, S. Noda, H. Ohata, T. Tsuji, H. Nakada and N. Shimoji Journal of Applied Physics, 2005, Volume 44, page 3669".

Moreover, it is known that a fine structure is required in a photoelectric conversion device such as a solar cell. Such solar cells are grouped into: dry solar cells formed from single crystal germanium, polycrystalline germanium, amorphous germanium, and the like; and wet solar cells, such as Graetzel electric holding or dye sensitive solar cells. In dye-sensitive solar cells, titanium oxide is used as the semiconductor electrode. However, in theory, solar cells using other oxide semiconductors can be obtained, and various studies for this purpose are underway.

In accordance with the teachings of the present invention, an improved microstructure is disclosed in which the above-described problems can be eliminated.

In accordance with the teachings of the present invention, a microstructure is disclosed that can be readily formed by the use of thermal lithography.

In accordance with the teachings of the present invention, a microstructure fabrication method is disclosed that can readily form microstructures using thermal lithography.

In accordance with the teachings of the present invention, a write-once information recording medium is disclosed which can be made at low cost and in which micro-record marks can be formed.

In one embodiment of the invention, a microstructure comprising a sulfur complex and a cerium oxide is disclosed to address or reduce one or more of the above problems.

The microstructures described above may be configured such that the microstructures may be in a convex configuration having a curved surface, a configuration in which a convex structure having a curved surface is formed on a cylindrical structure, and a configuration of a cylinder.

The microstructure may be configured such that the microstructure may be: a convex configuration having a curved surface, a configuration in which a convex structure having a curved surface is formed on the cylindrical structure, and a configuration in which the cylindrical cross section is continuously formed Any one of them.

The above microstructure can be configured such that the sulfur composite contains ZnS.

The microstructure can be configured such that the sulfur composite comprises a first sulfur complex for enhancing the optical absorption capacity for light having a predetermined wavelength.

The above microstructure may be configured such that the sulfur composite contains at least one of FeS and GeS ₂ .

The microstructures described above can be configured such that the microstructure further includes a material for enhancing optical absorption for light having a predetermined wavelength.

The above microstructure may be configured such that the material for improving the optical absorption ability for light having a predetermined wavelength includes at least one of aluminum (Al), silver (Ag), gold (Au), copper (Cu), Zinc (Zn), platinum (Pt), antimony (Sb), antimony (Te), germanium (Ge), antimony (Si), antimony (Bi), manganese (Mn), tungsten (W), antimony (Nb), Cobalt (Co), strontium (Sr), iron (Fe), indium (In), tin (Sn), nickel (Ni), molybdenum (Mo), magnesium (Mg), and calcium (Ca).

The microstructures described above can be configured such that the microstructure further includes an oxide material for enhancing optical absorption for light having a predetermined wavelength.

The above microstructure may be configured such that the material for enhancing the optical absorption capability for light having a predetermined wavelength comprises one of the second sulfur complex and the zinc composite.

The above microstructure may be configured such that the material for improving the optical absorption ability for light having a predetermined wavelength contains at least one of ZnTe, ZnSe, and MnS.

The above microstructure may be configured such that the material for improving the optical absorption capability for light having a predetermined wavelength comprises a fluorescent material.

The above microstructure may be configured such that the phosphor material comprises CsSe or CdTe.

The microstructures described above can be configured such that the percentage of niobium oxide content is in the range of from 10 moles to 30 mole percent.

In an embodiment of the present invention for solving or alleviating one or more of the above problems, a method of fabricating a microstructure is disclosed, the method comprising the steps of: forming a layer comprising a sulfur complex and a tantalum oxide on a substrate; Irradiating the layer comprising the sulfur complex and the cerium oxide by laser light; etching the layer irradiated by the laser light to form a microstructure, wherein the sulfur compound comprises the first sulfur compound for improving The optical absorption capability of light having a predetermined wavelength, or the layer comprising the sulfur composite and the cerium oxide, further comprises a material for improving optical absorption.

In an embodiment of the present invention that solves or alleviates one or more of the above problems, a write-once information recording medium is disclosed, comprising: a substrate; and a recording layer formed of a mixed inorganic material and deposited on the substrate, Wherein, the mixed inorganic material comprises a sulfur composite and a cerium oxide.

The information recording medium can be configured to be written as described above, so that the mixed inorganic material further comprises: an inorganic material different from the sulfur composite and the tantalum oxide, and the metal, the semimetal, and the semiconductor selected by the following; and a recording layer The optical absorption capacity of the recording layer having a light absorption capacity for a predetermined wavelength greater than that of the same thickness but not containing the inorganic material.

The information recording medium can be configured to be written once, so that writing the information recording medium further includes: a dielectric layer and a reflective layer deposited on the substrate.

The information recording medium may be configured to be written as described above such that the inorganic material contains an element constituting the sulfur composite and the cerium oxide.

The information recording medium can be configured to be written as described above, such that the inorganic material contains at least one element selected from the group consisting of aluminum (Al), silver (Ag), gold (Au), copper (Cu), zinc (Zn), and platinum. (Pt), bismuth (Sb), tellurium (Te), germanium (Ge), germanium (Si), germanium (Bi), manganese (Mn), tungsten (W), germanium (Nb), cobalt (co), germanium (Sr), iron (Fe), indium (In), tin (Sn), nickel (Ni), molybdenum (Mo), magnesium (Mg), calcium (Ca), lead (Pb), and barium (Ba).

According to an embodiment of the present invention, it is possible to provide a microstructure which can be easily formed by using thermal lithography, and a microstructure manufacturing method which can easily form a microstructure by using thermal lithography.

According to an embodiment of the present invention, the following articles may be used to provide a method of fabricating a substrate: microstructure, structure, information recording medium, main substrate, optical element, optical communication device, DNA wafer, light emitting device, photoelectric converter, and An optical lens comprising this microstructure.

According to an embodiment of the present invention, it is possible to provide a write-once information recording medium which can be manufactured at low cost and in which micro-record marks can be formed.

Other objects, features, and advantages of the present invention will be apparent from the description and appended claims.

Embodiments of the invention will now be described with reference to the drawings.

The microstructure of Embodiment 1 of the present invention comprises a mixed composition comprising: at least one sulfur complex (referred to as material A), and at least one tantalum oxide (referred to as material B). When the microstructure is formed, sintering is promoted by heating because it contains the material A, and this patterning using etching is possible because it contains the material B. The design of the optical non-reflective film or photocrystal can reflect the configuration of the microstructure therein, and the refractive index of the microstructure can be easily adjusted.

Examples of the material A may include: ZnS, CaS, BaS, CdS, K ₂ S, Ag ₂ S, GeS, CoS, Bi ₂ S ₃ , PbS, Na ₂ S, Cu ₂ S, CuS, Al ₂ S ₃ , Sb ₂ S ₃ , SmS, PbS, Na ₂ S, LiS, SiS, SiS ₂ , and any combination comprising two or more complexes may be used. Among them, ZnS is favored because it is easily mixed with material B, and it can be used as a splash target at a low price. Since the crystallinity is improved as the optical irradiation or the laser light is heated, a difference in etching resistance is generated between the irradiated region and the non-irradiated region. The microstructure can be made by using this principle, and the adjustment of the refractive index of the microstructure can also be achieved. Therefore, this is possible by the processing of thermal lithography, and optical elements and information recording media having viable optical properties can be obtained.

Material B is mainly SiO ₂ and SiO may be contained therein. SiO can be produced due to lack of oxygen when forming a target or when forming a mixed material layer.

The microstructure of Embodiment 2 of the present invention comprises: a mixed composition comprising a sulfur composite (referred to as material A'), a material B, and a material (referred to as material C) for improving optical light having a predetermined wavelength of light. Absorptive capacity; or a mixed composition comprising material A' for improving the optical absorption capacity for light having a predetermined wavelength, and material B. This microstructure can be formed on a substrate having no light absorbing layer by using thermal lithography.

The size of the microstructure is preferably in the range between tens of nanometers and hundreds of nanometers. This size is equal to the size of the recording mark of the high-density recording medium or the size of the constituent unit of the periodic structure. In the latter case, this material A' for improving the optical absorption ability for light having a predetermined wavelength can be used together with the material C, or the material A' which does not improve the optical absorption ability for light having a predetermined wavelength.

The optical absorption capacity will now be explained. This optically absorptive material reflects light while absorbing light. The amount of light absorption varies depending on the depth z of light entering the material, and the amount of light absorption is determined by the absorption coefficient k. This absorption coefficient k is represented by the following Beer law: I = I ₀ exp (-αz), α = 4πk / λ

I represents the intensity of the light-permeable substance, I ₀ represents the intensity before the light penetrates the substance, α represents the absorption coefficient, and λ represents the wavelength of the light.

That is, if the depth of the light entering the substance (the thickness of the substance) increases, the greater the amount of light absorbed by the substance, the lower the intensity of the light that permeates the substance. This improves the optical absorption capacity according to the present invention. Taste: This absorbance coefficient k, which contains the microstructure of the material, is greater than the absorption coefficient k of the same thickness microstructure that does not contain the material.

The wavelength dependence of this absorption coefficient k varies depending on the material. For example, even when k of a material is small in the visible range, k of the same material is large in the ultraviolet range. This point is taken into account and the wavelength of the laser light used to illuminate the mixed material needs to be selected. The wavelength of the laser light used herein is not limited, and any of deep ultraviolet laser light, visible laser light, infrared laser light, or the like can be used. In particular, red semiconductor laser light and blue semiconductor laser light are preferred because they are inexpensive and can perform multiple pulsed light illumination. Examples of the light source used herein may include: visible light laser, F ₂ laser, ArF laser, KrF laser, and the like. Among them, visible light lasers are favored because they can be obtained at low cost and can be easily used.

The measurement of the absorption coefficient k and the refractive index n can be carried out using a spectroscopic elliptical. The absorption coefficient k varies with the refractive index n depending on the wavelength of the light. For example, in the case of ZnS-SiO ₂ (molar ratio of 80:20), relative to 405 nm of laser light (blue), n is about 2.33 and k is about 1 x 10 ^-3 , relative to 350 nm of laser light ( UV color, n is about 2.33 and k is about 1 x 10 ^-2 , and relative to 680 nm laser light (red), n is about 2.16 and k is about 1 x 10 ^-8 . Adding material C to the microstructure allows adjustment of the refractive index n and the absorption coefficient k.

Examples of the material A' which can be used for improving the optical absorption ability in addition to the material A are, for example, FeS and GeS ₂ . Two or more materials A' can be used in combination. Among them, ZnS is favored because it is easily mixed with the material B, and can be obtained as a splash target at low cost. ZnS is nearly transparent in the visible range, and the addition of material C to the microstructure will allow adjustment of the transmission of this microstructure to visible light.

An example of a microstructure formed of a mixed material containing ZnS (material A'), SiO ₂ (material B), and a metal or a semiconductor (material C) will be described as an example of the microstructure of the present invention.

SiO ₂ has a little etching resistance to hydrofluoric acid, and it reacts according to the following formula: SiO ₂ + ₆ HF → H ₂ SiF ₆ + H ₂ O. This layer of mixed material is etched in hydrofluoric acid and absorbs visible laser light. The heated mixed material improves the etching resistance to hydrofluoric acid, and it remains unetched and leaves a microstructure.

In particular, if the hybrid material absorbs visible laser light having more than one given output power and is heated, a crystallization of ZnS and SiO ₂ is produced, and the etching resistance to hydrofluoric acid is improved. If the content percentage of ZnS in the mixed material at this time is less than 60 mol%, the etching resistance to hydrofluoric acid may be insufficient.

SiO _{2 is} required in order to etch the mixed material. However, if the content of SiO ₂ in the mixed material is less than 10 mol%, it exhibits some etching resistance to hydrofluoric acid even when the mixed material does not absorb visible laser light. If the content of SiO ₂ in the mixed material exceeds 30 mol%, the microstructure may not remain. ZnS-SiO ₂ can transmit visible light. If the mixed material absorbs visible light and does not contain the material C for generating heat, heating may be insufficient even when it is irradiated with visible laser light. If an organic material is used as the material C, heating may be insufficient. This may be because adding organic material in this case does not allow the absorption coefficient k to increase.

For this reason, the material C is preferably a semiconductor material or a metal material. Although the layer formed of the mixed material can be formed by a splashing method, it can be used and performed to perform the slag removal of the mixed target instead of simultaneously removing the slag. This mixed target can be produced by mixing the material B with the powder of the material C and sintering it.

Material C preferably comprises one of the zinc complex and sulfur complexes different from material A'. When ZnS is used as the material A', the sulfur or zinc contained in the material A' is contained in the material C, which smoothes the configuration of the terminal of the microstructure. Examples of the material C may include ZnTe, ZnSe, MnS, etc., although this is not a limitation, it may be received as a supply of a splash target. Two or more of them may be used in combination.

Examples of the material C may include: aluminum (Al), silver (Ag), gold (Au), copper (Cu), zinc (Zn), platinum (Pt), antimony (Sb), tellurium (Te), germanium (Ge). ), bismuth (Si), bismuth (Bi), manganese (Mn), tungsten (W), niobium (Nb), cobalt (Co), antimony (Sr), iron (Fe), indium (In), tin (Sn ), nickel (Ni), molybdenum (Mo), magnesium (Mg), calcium (Ca), or the like, which may be used in combination of two or more kinds. Examples of the material C may include any such alloys, for example, InSb, AgInSbTe, GeSbTe, ZnMgTe, CsZnTe, SbZn, and any such composites, for example, ZnMgSSe, ZnCrO ₄ , ZnCrO ₃ , ZnWO ₄ , ZnTiO ₃ , Zn ₃ N ₂ , ZnF ₂ , ZnSnO ₃ , and ZnMoO ₄ . Such a material can be easily obtained as a splash target, and the refractive index of the microstructure can be adjusted.

Material C preferably comprises a fluorescent material. The location of the microstructure can be examined by detecting the fluorescence emitted from the microstructure when it is illuminated by ultraviolet or visible light. For this reason, fluorescent detection of fluorescent semiconductor quantum dots can be used to detect specific portions, and can be used as an information recording medium. As the fluorescent material, CdSe, CdTe, or the like is mentioned, and two or more kinds may be used together. Such a fluorescent material has a high fluorescence characteristic and it can be easily obtained.

Material C can be oxidized when it is illuminated by laser light. Among them, the degree of oxidation of the material C is based on: laser light irradiation (pulse light output, pulse width), material C type, material A', material B, and material C and the like.

However, if the material A' is used on the crucible substrate, the electric furnace is used after the multi-target splashing of the material B and the material C is performed, and the heat curing (tempering) is performed for 30 minutes, and the incident X is obliquely incident. - The peak of the oxide of material C will be seen in the light diffraction experiment.

For example, when a film of ZnS, SiO ₂ , and Zn having a thickness of 200 nm is formed on a tantalum substrate, the tip of ZnO cannot be seen, but when tempering is performed at 500 ° C for 30 minutes, the peak of ZnO can be seen. It is conceivable that at least a portion of Zn (material C) is oxidized and this is set to ZnO.

Similarly, in the case of ZnS, SiO ₂ , and Mn, the peak of Mn ₃ O ₄ was not observed before tempering, but after tempering, the peak of Mn ₃ O _{4 was} observed. When irradiated with laser light at this time, it is not clear how much the portion of the laser beam is heated and at what rate. However, a predetermined amount of material C may be oxidized in the microstructure etched by hydrofluoric acid. For this reason, in the following embodiments, although it is explained that the composition of the microstructure is the same as before the irradiation of the laser light, there is also a case in which the microstructure contains the oxide of the material C. Therefore, if a predetermined amount of material C is oxidized, the hardness of the microstructure can be increased. In particular, the hardness of the microstructure measured using the micro-detector is higher than the hardness of the film prior to forming the microstructure. Optical properties such as transmittance and refractive index at this time also vary with the oxidation of the material C. Although the configuration of the microstructure of the present invention is not limited, it may be a convex configuration such as a curved surface having a hemispherical surface. If the microfabrication of this microstructure is implemented using X-ray or optical lithography, this is expensive. The fabrication of this microstructure is obtained at low cost using thermal lithography and can be applied to the main model of optical components or ultra-fine printing. Optical elements are obtained by physical or chemical distributions formed in the microstructure.

This one end of the microstructure having a curved surface convex configuration becomes smooth, and this microstructure has a curved surface. However, depending on the manufacturing situation, sharp edges or flat side surfaces may be produced. In a three-degree space, this region having a curved surface is due to the configuration of the microstructure based on the thermal distribution of the laser light that primarily illuminates the layer formed by the hybrid material.

Since the region where the laser light is not irradiated is removed by hydrofluoric acid by performing wet etching, the microstructure is configured as a convex. For this reason, if it is transferred using a photocurable resin or the like, a concave pattern will be formed in the transferred substrate.

The microstructure of the present invention can be a configuration in which a convex structure having a curved surface such as a hemispherical surface is formed on the cylindrical structure. Since the microstructure has two step structures, the gap between the convex structures having adjacent curved surfaces can be maintained, and the recording marks in the information recording medium can be clearly separated using the fluorescent light. It is also possible to design an optical non-reflective film and a light crystal reflecting such a form, and the refractive index can be adjusted. In lithography, this sensitive part undergoes chemical changes and cannot be made into such a form of microstructure.

The microstructure of the present invention can be a cylindrical configuration. If microfabrication is performed using X-ray or optical lithography, the fabrication of this structure would be expensive. However, the fabrication of this structure can be obtained at low cost using thermal lithography, and it can also be applied to the main model of optical components or ultra-fine printing. In addition, optical non-reflective films and photocrystals reflecting such a configuration can also be designed and the refractive index can be adjusted. If this lithography is used in which the sensitive portion shows a chemical change, it is difficult to fabricate a microstructure having such a configuration.

In the present invention, the diameter of the microstructure can be changed from the size of a spot to a size of about 1/4 of the spot size by varying the pulsed light output and the pulse width (irradiation time). For example, when a laser beam having a wavelength of 405 nm is focused using an objective lens having a numerical aperture (NA) of 0.85, the diameter of the microstructure can be changed to any of the range of 80-400 nm.

The microstructure of the present invention can be any of the following configurations: a configuration having a curved surface convex configuration, a configuration in which a curved surface convex structure is formed on a cylindrical structure, and a cylindrical configuration in which a cross section is continuously formed. Such a linear microstructure can be formed by continuously irradiating the layer formed of the mixed material, and can be applied to a diffraction grating, a DNA wafer, or the like.

The smoothness of the microstructure termination can be estimated by the line edge roughness (LER) of the linear microstructure formed by the continuous illumination of the laser beam. In one case, where the microstructure is used as an impedance and the substrate is etched. In this case, the microstructure of the present invention has characteristics different from those of the macromolecular impedance used in electron beam lithography. In this macromolecular impedance, the macromolecular impedance itself has a size of several nanometers when the pattern becomes small, and the LER of this impedance is also set to several nanometers.

In another aspect, the LER can be set to 1 nm or less in the microstructure of the present invention. In recent years, in the international technology road map for semiconductors, this proper noun "LER" has been corrected to "line width roughness" (LWR). Although the measurement criteria of the LER are not strictly defined, the LER according to the present invention is judged such that the measurement line length is set to 2 μm, the measurement gap is set to 10 nm, and the LER is determined from the 3σ of the straight line by the least squares method. .

The microstructure of the present invention can be applied to: an information recording medium, a main substrate, an optical element, a magnetic recording medium, a DNA wafer, a biosensor, a DNA computer, a DNA memory, a biomolecular integration device, and the like.

The manufacturing method of the microstructure of the present invention comprises the steps of: forming a layer on the substrate, the layer being formed of a material A' and a mixed material comprising the material B and the material C; and forming the mixed material by partial irradiation of the laser light a layer; and etching the layer formed of the mixed material and irradiating with the laser beam. For this reason, the mixed material which is locally heated and has an altered etching resistance is subjected to wet or dry etching to produce a microstructure having a smooth termination.

A structure can be made in which the microstructure of the present invention is formed. Although it is possible to locally apply heat instead of locally illuminating the laser light, since the laser light has superior performance in terms of directivity and stability, it is preferable to use laser light due to manufacturing accuracy.

The patterning method of the substrate of the present invention comprises the steps of forming a microstructure comprising a material A', a material B, and a material C on a substrate; and using the microstructure as a mask to perform substrate etching. At this time, if necessary, the microstructure used as a mask can be removed. Therefore, the substrate in which the pattern is formed can be applied to: a main substrate, an optical element, a DNA wafer, a light-emitting device, a photoelectric converter, and the like.

Although the structure of the present invention has the microstructure of the present invention on a substrate, the structure of the present invention preferably has regions (referred to as periodic regions) in which the microstructures are periodically arranged. Can get these An optical filter with an optical band gap and an optical switch that reflects a specific wavelength of light by a periodic region.

Preferably, the transmission of the predetermined band of light in the periodic region is greater than: the transmission of the unconfigured microstructure. Therefore, an optical non-reflective film can be obtained by a moth-eye structure in which a non-reflective feature is displayed for a predetermined wavelength of light.

If the structure of the present invention includes a region (referred to as a non-periodic region) in which a microstructure is not disposed, an information recording medium using a difference between a periodic region and a non-periodic region, and an optical waveguide included in the periodic region can be obtained; In the non-periodic region, and using the optical band gap, it reflects the light of a specific wave band by the periodic region. In the microstructure of the present invention used in an information recording medium, a fluorescent material is contained in the material C.

The pattern formed on the substrate by the patterning method using the substrate of the present invention can be transferred and reproduced, and the microstructure formed on the substrate can be transferred and reproduced. When remanufactured, the pattern and microstructure can be transferred to such a material via ultra-fine printing techniques, which comprise a resin as a primary component. Such a method can be used when manufacturing the following objects: a main substrate, an optical element, a DNA wafer, a light-emitting device, and a photoelectric converter, an optical lens, and the like.

The main substrate of the present invention is fabricated using this structure including a region in which the microstructure of the present invention is periodically disposed on a substrate. For this reason, the manufacturing cost of the main substrate of the present invention can be lower than that of the main substrate using conventional optical lithography, and the recording pattern can be made clear. Such a main substrate can be used when manufacturing an optical information recording medium or the like.

The optical element of the present invention is fabricated using this structure comprising a region in which the microstructure of the present invention is periodically disposed on a substrate. Examples of such an optical element may include: a diffraction grating, a polarization separation element, an optical filter, an optical switch, an optical non-reflective film, and an optical waveguide.

The optical component of the present invention can be applied to known optical communication devices such as wavelength multiplexing devices for use in wavelength multiple telecommunications. As shown in FIG. 31, in wavelength multiple telecommunications, it uses an optical fiber 301, a transmitter 311, 312, 313 for each of a plurality of wavelengths, and a set of receivers 321, 322, and 323, To transmit optical signals of several different wavelengths (λ1, λ2, and λ3). In order to make the transmission path a wide bandwidth, the optical composition circuit 331 and the optical resolver circuit 332 are used. At this time, the optical composition circuit 331 and the optical resolver circuit 332 can be formed by combining a plurality of optical switches.

In the DNA wafer of the present invention, DNA fragments are immobilized on a substrate. The substrate of the DNA wafer of the present invention is fabricated using this structure in which the microstructure of the present invention is disposed on a substrate. At this time, the microstructure has a large specific surface area, the detection efficiency becomes high, and the size of the entire wafer can be made small.

In the light-emitting device of the present invention, the first electrode, the light-emitting layer, and the second electrode are sequentially deposited on the substrate in this order. The light-emitting device of the present invention is fabricated using a structure including a region in which the microstructure of the present invention is periodically disposed, or a structure in which the microstructure of the present invention is periodically disposed on a substrate.

At this time, the first electrode, the light-emitting layer, and the second electrode may be deposited on the surface on which the microstructure of the present invention is not disposed, or on the surface on which the microstructure of the present invention is disposed. According to this uneven structure including the microstructure, the light extraction efficiency of the light-emitting device is improved, and the luminous efficiency is improved.

In the photoelectric converter of the present invention, the first electrode, the photoelectric conversion layer, and the second electrode are sequentially deposited on the substrate in this order. The substrate of the photoelectric converter of the present invention is fabricated using the structure of the microstructure of the present invention having a periodically disposed region, or the substrate is formed on the substrate, and the substrate uses the periodically arranged region. The structure of the structure. This photoelectric converter having high photoelectric conversion efficiency is obtained by the fact that the photoelectric converter includes an uneven structure of a microstructure.

The optical lens of the present invention is made using the structure comprising the microstructure of the present invention, or using a structure in which the microstructure of the present invention is disposed on a substrate. Therefore, a reliable micro-optical lens is obtained.

Example 1

1A and 1B are diagrams showing the components of the information recording medium 100A of the first embodiment of the present invention. Fig. 1A is a cross-sectional view of the information recording medium, and Fig. 1B is a top view of the information recording medium.

In the information recording medium 100A, a 50 nm-thick dielectric layer 102 of ZnS-SiO ₂ (MoR ratio: 8:2), a 10 nm-thick light absorbing layer 103 of AgInSbTe, and a microstructure 104 are formed: having a thickness of 1 mm. On a substrate 101 having a size of 10 cm x 10 cm.

This microstructure 104 is configured as shown in FIG. 1B and is determined by the presence of the microstructures 104. In particular, when the recording medium 100A is irradiated with laser light, the microstructure 104 is Fluorescence is emitted, and thus the area 105 in which the microstructures 104 are not disposed is not illuminated, so that the recording medium 100A can function as an information recording medium.

Each microstructure 104 is in a hemispherical configuration with a bottom diameter of approximately 150 nm and a height of approximately 30 nm. This microstructure 104 is arranged at a 200 nm period (mark pitch), that is, at intervals of 50 nm.

Each microstructure 104 contains ZnS, SiO ₂ , and CdTe (Morby: 77:20:3) and exhibits behavior similar to fluorescent quantum dots. The information is read from the recording medium by scanning the fluorescence detecting optical head in the direction indicated by the arrow in FIG. 1B. In the fluorescence detecting optical head, the emitted fluorescent light is focused by a lens and passed through an optical fiber and an optical filter so as to be amplified by using a photomultiplier tube to detect fluorescence. Through the optical head, the optical filter, and the optical signal processing method, even if the fluorescent light is weak, fluorescence can be detected.

2A to 2D are views showing a method of manufacturing the information recording medium 100A.

First, the dielectric layer 102, the light absorbing layer 103, and the mixed material layer 106 are deposited on the ruthenium substrate in this order by using (from Shibaura Mechatronics Co.) a splash device CFS-8EP-55 (refer to FIG. 2A). 101. The mixed material layer 106 contains ZnS, SiO ₂ , and CdTe (Mohr ratio: 77:20:3), and has a thickness of 160 nm.

Next, the obtained germanium substrate 101 is vacuum-attracted to the XY stage, and the pulsed illumination of the germanium substrate 101 is such that the laser light 107 having a wavelength of 405 nm from the semiconductor laser is in the period of 200 nm, via 0.85. The objective lens 108 of NA is implemented (refer to FIG. 2B). At this time, the portion of the substrate illuminated by the laser beam 107 is predetermined by the program. Etching was carried out using 2% by weight of hydrofluoric acid 109 for 10 seconds (refer to Fig. 2C). Then, a scanning electron microscope is used to observe the microstructures 104 formed by the portions irradiated by the laser rays 107 (refer to FIG. 2D). The etching resistance of the mixed material layer 106 to hydrofluoric acid is improved due to a sintering effect, a portion that remains unetched by the portion irradiated by the laser light 107, and a remaining hemispherical pattern.

Therefore, the microstructures 104 can be easily fabricated by using thermal lithography. Since the weight percentage of the CdTe content in the mixed material layer 106 is 3%, fluorescence detection can be used to form the information recording medium 100A without affecting the manufacture of the microstructures 104. Since the recording area and the unrecorded area are distinguished by the presence of the microstructures 104, the information recording medium 100 obtained as such can be used as the read only memory (ROM). Since the mixed material layer 106 contains ZnS and SiO ₂ , the changed etching resistance can be used, and the refractive index can be adjusted.

Example 2

3A and 3B are diagrams showing the components of the information recording medium 100B of the embodiment 2 of the present invention. Fig. 3A is a cross-sectional view of the information recording medium, and Fig. 3B is a top view of the information recording medium.

In the information recording medium 100B, a 50 nm-thick dielectric layer 102 of ZnS-SiO ₂ (MoR ratio: 8:2), a 10 nm-thick light absorbing layer 103 of germanium (Ge), and a 20 nm thick ZnS layer 111, The microstructures 104 are formed on the polycarbonate substrate 110. The polycarbonate substrate 110 is a dish-shaped plate for an optical disk having a diameter of 12 cm and a height of 20 nm, and has a land and a groove of a period (track pitch) of 440 nm.

This microstructure 104 is configured as shown in Figure 3B and is determined by the presence of the microstructures 104. In particular, when the recording medium 100B is irradiated with laser light, the microstructures 104 emit fluorescence, and thus the area where the microstructures 104 are not disposed does not emit fluorescence.

Each microstructure 104 is in a hemispherical configuration with a bottom diameter of about 150 nm and a height in the range of 30-160 nm. This microstructure 104 is configured with a period of 400 nm (mark pitch).

Each microstructure 104 contains ZnS, SiO ₂ , and CdTe (Morby: 77:20:3) and exhibits behavior similar to fluorescent quantum dots. The information is read from the recording medium by scanning the fluorescence detecting optical head in the direction indicated by the arrow in FIG. 3B. In the fluorescence detecting optical head, the emitted fluorescent light is focused by a lens and passed through an optical fiber and an optical filter so that the fluorescent light is amplified by using a photomultiplier tube to detect fluorescence. Through the optical head, the optical filter, and the optical signal processing method, even if the fluorescent light is weak, fluorescence can be detected.

Next, a method of manufacturing the information recording medium 100B will be described.

First, the dielectric layer 102, the light absorbing layer 103, the ZnS layer 111, and the mixed material layer 106 are deposited on the polycarbonate substrate in this order by using (from Shibaura Mechatronics Co.) a splash device CFS-8EP-55. 110 on. The mixed material layer contains ZnS, SiO ₂ , and CdTe (Mohr ratio: 77:20:3), and has a thickness of about 160 nm.

Next, when the obtained polycarbonate substrate 110 was rotated at a linear velocity of 4.5 m/sec, a surface recording disc tester LM330 (from Shibasoku Co.) was used to carry out focusing and tracking. The pulsed irradiation of the polycarbonate substrate 110 was carried out by using a laser beam having a wavelength of 405 nm in a period of 400 nm via an objective lens having a 0.85 NA (5.0 mW pulse light output). The portion of the substrate illuminated by the laser light is predetermined by the program. Etching was carried out using 2% by weight of hydrofluoric acid for 10 seconds. Then, a scanning electron microscope is used to observe the microstructures 104 formed by the portions irradiated by the laser light. The etching resistance of the mixed material layer to hydrofluoric acid seems to be improved due to a sintering effect, a portion that remains unetched by the portion irradiated with the laser light, and a hemispherical pattern.

Therefore, the microstructures 104 can be easily fabricated by using thermal lithography. Since the weight percentage of the CdTe content in the mixed material layer is 3%, fluorescence detection can be used to form the information recording medium 100B without affecting the manufacture of the microstructures 104. Since the recorded area and the unrecorded area are distinguished by the presence of the microstructure 104, the information recording medium 100B can be used as a read-only memory (ROM). Since the mixed material layer 106 contains ZnS and SiO ₂ , the changed etching resistance can be used, and the refractive index can be adjusted.

Since the laser light irradiation can be performed while the substrate on which the protrusions and the grooves for the optical disc are formed, while focusing and tracking are simultaneously performed, the microstructures 104 can be formed with good accuracy and speed.

Example 3

The microstructure dependence of this pulsed light output was investigated. This pulsed light output varies in the range of 1.5-7 mW. This method of manufacturing the microstructure is the same as that of the embodiment 2. This is due to the use of ZnS-SiO ₂ (Mohr ratio: 8:2) as a microstructured material.

Figures 4A through 9B show scanning electron micrographs of the microstructures produced. A field emission scanning electron microscope FE-SEM S-4100 (from Hitachi Ltd.) was used to carry out observation.

In the 4A to 9B drawings, SEM photographs taken from the top surface direction and SEM photographs taken from the oblique direction are shown. This is evident from the SEM photographs, which include changes in the microstructure of the height and width depending on the change in pulsed light output.

In Embodiment 3, even when this microstructure is formed into any of the displayed configurations, it can be used as an information recording medium.

Figure 10 shows the relationship between the pulsed light output and the maximum diameter of the microstructure. As is apparent from Figure 10, the maximum diameter of this microstructure does not exhibit linearity for pulsed light output. This is in it The configuration of the microstructure formed on the unevenly formed polycarbonate substrate can be mainly classified into the following stages I-IV according to the value of the pulse light output (refer to Figs. 11A-11D).

Phase I (pulse ray output 3.5-5.2 mW): This microstructure 104 is in a non-spherical configuration, but in a hemispherical configuration. The maximum diameter of this microstructure 104 increases as the pulsed light output increases (see Figure 11A).

Stage II (pulsed light output 5.2-6.8 mW): This microstructure 104 comprises: a cylindrical structure 104a; and a hemispherical structure 104b formed in the center of the upper cylindrical structure 104a. The cylindrical structure 104a includes two upper and lower cylindrical structures. The size of the lower cylindrical structure increases as the pulsed light output increases (refer to Figure 11B).

Stage III (pulse light output 6.8-8.0 mW): This microstructure 104 comprises: a cylindrical structure 104a; and a hemispherical structure 104b formed in the center of the upper cylindrical structure 104a. The cylindrical structure 104a includes two upper and lower cylindrical structures. The size of the upper cylindrical structure is larger than the size of the lower cylindrical structure (refer to Fig. 11C).

Stage IV (pulse light output exceeds 8.0 mW): This microstructure 104 is in a cylindrical configuration (refer to Figure 11D).

In phase I, shown in Figures 4A through 5B, this microstructure 104 is in a hemispherical configuration (see Figure 11A). Stages II and III are shown in Figures 6A through 9B, and the microstructures 104 include a cylindrical structure 104a and a hemispherical structure 104b. In stage II, the microstructure 104 has a maximum diameter below the cylindrical structure 104a (see Figure 11B). In another aspect, in stage III, the microstructures 104 have a maximum diameter above the cylindrical structures 104a (see Figure 11C). In stage IV, this microstructure 104 has an opening formed in its center and is in a cylindrical configuration (refer to Figure 11D).

The reason why the etching resistance of the mixed material layer is improved by the irradiation of the laser light is not very clear. This seems to be almost optically transparent for this layer of mixed material, and this light absorbing layer absorbs the laser light and is heated, so that the layer of the mixed material is tightly packed due to the sintering effect.

The heat distribution from the light absorbing layer that absorbs the laser light is a Gaussian distribution. And when a flat substrate is used, the configuration of this microstructure is substantially hemispherical. However, if a substrate for an optical disc having unevenness is used, this spatial heat distribution becomes somewhat complicated in a three-dimensional manner, and thus the configuration of the microstructure is as shown in the stage I-IV.

The heat mainly occurs in the center of the free space, and the etching resistance of this stage I is improved in the high temperature portion used as the mixed material layer. In the stage II, since the thickness of the mixed material layer is limited, the heat radiation stops to be in the shape of a concentric circle, and a portion close to the light absorbing layer tends to become a high temperature. In stage III, some factors such as the unevenness of the polycarbonate substrate and the upper portion of the air space rather than the lower portion, the upper portion of the mixed material layer is thermally dissipated and is considered to be easily high temperature. In stage IV, evaporation of the light absorbing layer is considered to be a critical factor and an opening is formed in the center of the cylindrical microstructure.

Each of the microstructures of the stages I-IV is a structure suitable for any of the following objects: an information recording medium, a light crystal, an optical non-reflective film, an optical switch, an optical filter, and a plasma crystal. Due to the configuration of the microstructure and the refractive index affecting the optical properties, it is necessary to adjust the size and refractive index for each configuration.

In Example 3, the microstructure was prepared by observing the resolution of a scanning electron microscope using ZnS-SiO ₂ . In the high-density information recording medium, the reduction of the narrow pitch track and the recording mark is important, and the microstructure of Embodiment 3 can be made into a size of several tens of nanometers in diameter. If the spacing between the protrusions and the grooves, the material of the light absorbing layer, the thickness, and the composition ratio of ZnS to SiO ₂ are changed, the configuration of the microstructure and the pulse light output characteristics are also slightly changed. Even when a material other than ZnS-SiO ₂ is used, or another substance is mixed with ZnS-SiO ₂ or the composition ratio is changed, a microstructure can be obtained.

The microstructure can be easily fabricated using the thermal lithography mentioned above. When the mixed material layer contains ZnS and SiO ₂ , the changed etching resistance can be used, and the refractive index can be adjusted.

Since the laser light irradiation can be performed while the substrate for forming the protrusions and the grooves for the optical disc is used, while focusing and tracking are simultaneously performed, the microstructure can be quickly formed with good accuracy.

Example 4

12A and 12B show the composition of the optical non-reflective film 100C of the embodiment 4 of the present invention, which is different from the embodiment 1 in that the mixed material layer is made of ZnS-ZnO-SiO ₂ (moire). Ratio: 6:2:2) is formed, and the others are the same as in Embodiment 1.

Fig. 12A is a cross-sectional view of the optical non-reflective film, and Fig. 12B is a top view of the optical non-reflective film.

Since the microstructure 104 having the configuration of the stage II-III of FIG. 11 is configured to have a period of 200 nm, the optical non-reflective film 100C controls the Fresnel reflection of light in a specific wavelength range (350-600 nm), and by moth-eye The non-reflective features shown by the structure.

The microstructures 104 can be easily fabricated using the thermal lithography mentioned above. When the mixed material layer contains ZnS and SiO ₂ , the changed etching resistance can be used, and the refractive index can be adjusted.

Any of these configurations of Phases I-IV of Figure 11 can be applied to optical non-reflective films regardless of the configuration of the microstructure. However, depending on the differences in the microstructure configuration, the height, refractive index, and period of the microstructure need to be appropriately adjusted. Although the refractive index of the material affects the optical non-reflective film, the optical non-reflective film can be formed using the inverse structure of the moth-eye structure. And the optical non-reflective film can form multiple layers.

Example 5

The optical waveguide shown in Fig. 13 was produced in the same manner as in Example 1, except that the mixed material layer used was formed of ZnS-ZnO-SiO ₂ (Morror ratio: 6:2:2). . Figures 13A and 13B are each a cross-sectional view and a top view of the optical waveguide. In the region where the optical waveguide 100D reflects light, the microstructure 104 having the configuration of the phase II-III of Fig. 11 is arranged at a period of 300 nm, and the microstructure 104 is not disposed at the light transmitting portion.

Since this reflection is due to the average refractive index and the light of a specific wavelength range (400-600 nm) generated by the periodic gap of the periodic structure of the optical band gap, as shown in Fig. 13B, the light can be transmitted.

In the optical waveguide by the light crystal, in order to depend on the angle of the incident angle and the wavelength of the reflected light, it is necessary to adjust the angle of the incident angle, and it is necessary to enter the light having a wavelength corresponding to the wavelength band of the optical band gap.

The microstructure can be easily fabricated using the thermal lithography mentioned above. When the mixed material layer contains ZnS and SiO ₂ , the changed etching resistance can be used, and the refractive index can also be adjusted.

The optical waveguide using the optical band gap can be applied to: optical filters, optical switches, and lasers. Although the light is not reflected and transmitted through the wavelength band close to the gap of the optical band, this exceeds the optical properties of the resolution limit, such as the alignment effect and the lens effect, and the optical crystal can be seen theoretically and in the phenomenon. Unique features. This effect also requires the use of the microstructure of the present invention.

This optical waveguide is not configured according to the microstructure, but a microstructure having the configuration of stages I-IV of Figures 11A-11D can be configured. This difference in the microstructure configuration is that the height, refractive index, and period of the microstructure need to be properly adjusted.

Although the features in the microstructure configuration are different and the features in the inverse structure of the periodic structure of the microstructure are different, an optical band effect is required. For this reason, as the light crystal, the periodic structure of the microstructure and its inverse structure can be used.

Example 6

The optical filters shown in Figures 14A-14B were made in the same manner as in Example 1, except that the mixed material layer used was made of ZnS-SrS-SiO ₂ (Mohr: 7:1:2). It was formed and a quartz substrate 112 of a size of 10 cm x 10 cm was used. Figures 14A and 14B are each a cross-sectional view and a top view of the optical filter.

In the optical filter 100E, the microstructures 104 are hemispherical, have a bottom diameter of 150 nm, a height of 30 nm, and are arranged at a cycle of 200 nm (mark pitch). For this reason, when irradiated with laser light, the optical filter 100E reflects light of a specific wavelength range (300 nm - 500 nm) as an effect of the sub-wavelength structure according to the angle of the incident angle.

If this light having a wavelength of 405 nm enters the field where the microstructure 104 is formed at this time and changes the angle, the incident light is reflected at a specific angle.

The microstructures 104 can be easily fabricated using the thermal lithography mentioned above. When the mixed material layer contains ZnS, SrS, and SiO ₂ , the changed etching resistance can be used, and the refractive index can also be adjusted.

From this, the periodic structure of the microstructures 104 can not only be made into a sub-wavelength structure, but also can produce a photonic crystal effect. This effect is: an optical filter to reflect light in a specific wavelength range; or an optical switch. The angle of incidence and wavelength of this reflected light depends on the sub-wavelength structure or the photocrystal of each other. When an optical filter and an optical switch use the same phenomenon and do not want to completely transmit light of a specific wavelength band, they operate as an optical filter. It becomes an optical switch and is used as an optical element to control the ON and OFF of light transmission.

In Examples 1 to 6, the material particularly used as the light absorbing layer is not limited, but Si, a group III-V semiconductor, and a 4Yuan mixed crystal complex other than AgInSbTe and Ge are mentioned. Compounds, etc. This method of applying heat, rather than locally illuminating the laser light, is also possible as a method of thermal lithography. However, it is excellent in directionality and stability, and because of the high manufacturing accuracy of the microstructure, it is favored to emit laser light.

Example 7

The main substrate shown in Fig. 15 was fabricated. The main substrate 200A is an object having a capacity of 25 GB for a Blu-ray Disc-Read Only Memory (BD-ROM), and a pattern 201a of recording pits is periodically arranged in a region having the same, and the track pitch is 0.32 μm. . The material of the main substrate 200A is quartz, and may be based on the main substrate 200A in accordance with the injection molding transfer process to form a stamper and an optical information recording medium (for example, a movie recording content).

A method of manufacturing the main substrate 200A shown in Figs. 16A-16F. First, a mixed material layer 202 having a thickness of 40 nm was formed from ZnS, SiO ₂ , and ZnTe (Mohr ratio: 70:20:10) by RF sputtering using a splash device CFS-8EP (from Shibaura Mechatronics Co.). It will become a flat disk quartz substrate 201 (refer to Fig. 16A).

Secondly, the focus of the blue laser light 204, by which the light source illuminates the numerical aperture (NA) of the laser illumination device with an objective lens 203 of 0.85, the wavelength of the light is 405 nm, and the focus is for the mixed material. The surface of layer 202 is implemented and this predetermined area is illuminated with a 5 mW pulsed light output (see Figure 16B). It enables the formation of a pattern using the strategy formed by the information on the ROM at this time.

Then, it was immersed in hydrofluoric acid 205 having a weight of 2% for 10 seconds (refer to Fig. 16C), and was allowed to dry. Therefore, the almost hemispherical microstructure 206 formed of ZnS, SiO ₂ , and ZnTe (MoR ratio: 70:20:10) is formed on the quartz substrate 201 (refer to Fig. 16D).

Then, it was mounted in a reactive ion etching (RIE) apparatus, and etching was performed by CF4 gas. Therefore, the microstructure 206 of the quartz substrate 201 is used as a mask, and etching is performed (refer to FIG. 16E).

The pattern 201a of the shadow mask configuration formed by the microstructures 206 is removed (refer to FIG. 16F).

The height of the pattern 201a formed of quartz as measured by an atomic force microscope (AFM) is about 40 nm. Although a dot-like pattern 201a is formed, if continuous illumination of the blue laser light 204 is performed, a linear pattern (groove) can be formed, and can also be made for: a re-recordable substrate (R) A substrate or a rewritable substrate (RW substrate) for a stamper of an object.

On the other hand, it is not certain whether a microstructure can be formed, and this depends on the composition ratio of ZnS, SiO ₂ , and ZnTe. When the evaluation regarding the relationship between the composition ratio and the pattern formation appropriateness was carried out, the results shown in Table 1 were obtained.

As is apparent from Table 1, patterns can be formed in the case of the samples 1, 5, and 7, and in the case of the samples 2, 3, 4, and 6, the pattern cannot be formed. The evaluation of samples 1-7 was carried out in order to examine the relationship between the composition ratio and the appropriateness of pattern formation. The etch resistance of each sample for hydrofluoric acid was evaluated before and after irradiation with a 1-8 mW pulsed light output and a blue laser light having a wavelength of 405 nm focused by an objective lens of 0.85 numerical aperture (NA), and obtained in Table 2 The results shown.

As is apparent from Table 2, the pattern formed by the sample before the irradiation of the laser light does not have an etching resistance, and the pattern formed by the sample after the irradiation of the laser light has some etching resistance. When samples 1, 3, and 4 are examined, SiO ₂ is required for the sample to have no etching resistance before the laser light is irradiated, and it is estimated that the required SiO ₂ composition percentage is more than 10 mol%.

On the other hand, when there is a large percentage of SiO ₂ content after laser light irradiation, as in sample 3, there is no etching resistance. Since there are many constituent components (ZnS and SiO ₂ ) which transmit laser light as sample 2, when there is a slight proportion of ZnTe, the absorption of the laser light becomes insufficient. ZnTe is required for ZnTe to increase optical absorption capacity, but if the ratio is too high as sample 7, the ratio of ZnS will become insufficient, and this will not promote systematization of heat generated by absorption of laser light. This also considers the composition ratio of the samples 1, 5, and 7 in which the pattern is formed, and the ratio of ZnS is greater than 60 mol%, and the ratio of ZnTe is assumed to be less than 30 mol%.

Further, when Ag was used instead of ZnTe and evaluation was similarly carried out, the results obtained are shown in Tables 3 and 4.

As is apparent from Tables 3 and 4, in Samples 8-14, even if Ag is used instead of ZnTe, it can be said that the relationship between the composition ratio of ZnS, SiO ₂ , and Ag and the pattern formation appropriateness is the same. . On the other hand, a pattern can be formed in the sample 16, but the pattern of the sample 8 is clearer. Pattern formation is not completed in sample 15 and sample 17, although sample 15 and sample 17 have a composition ratio close to that of sample 16.

In the sample 15, as shown in Table 4, there was an etching resistance before irradiation with laser light, and a pattern could not be formed, and it showed that the ratio of SiO ₂ was 9 mol%. On the other hand, in the sample 17, there was no etching resistance before the irradiation with the laser light, but the percentage of Ag was 9 mol%, and it was conceivable that the dose of the laser light was insufficient and the pattern could not be formed. In this case it is conceivable that a pattern can be formed if illuminated by a larger output of laser light.

Since the calorific value following the absorption of the laser light will change if this addition is changed as the material of the material C, the laser light irradiation (pulse light output, pulse width) for pattern formation also changes. The same principle applies to material A'. When etching is performed using hydrofluoric acid, the patterned SiO ₂ ratio may be greater than 10 mol%, and the same principle is also applicable to the case where SiO is included. As is apparent from samples 18-20, the patterned SiO ₂ ratio can be less than 30 mol%. In the sample 18, the percentage of the SiO ₂ content was 30 mol%, and a pattern could be formed, but the pattern was not clear. In the samples 19 and 20, the percentage of the SiO ₂ content was 31 mol%, and most of the microstructure did not remain.

Even if the pulsed light output of the laser light increases, the ratio of the material C decreases, and the ratio of the material A' increases, the patterned SiO ₂ ratio may be less than 30 mol%. In order to form a clear pattern, it is preferred to suitably include SiO ₂ in the range of 10 to 30 mol%.

When a mixed material layer is formed by a splashing method, a splash target formed of a mixed material may be used, or a splash target for each material may be prepared, and a common splash may be performed. According to the sputtering method, there is such a case that oxygen is insufficient in SiO ₂ and SiO _x (x = 1-2) is formed, and in this case, the surface roughness of the mixed material layer is different, but the mixed material layer is The quality of the film has not changed significantly.

It is conceivable that when the mixed material layer is irradiated with laser light, the materials are mixed in the mixed material layer.

The absorption coefficient k of ZnS-SiO ₂ (molar ratio: 80:20) is about 1 x 10 ^-3 for blue laser light having a wavelength of 405 nm. On the other hand, the absorption coefficient k of the mixed material layer of the sample 5 was 1 x 10 ^-1 .

Therefore, the blue laser absorption capability can be improved by adding ZnTe to the mixed material layer. Since the calorie value in the mixed material layer is based on the pulsed light output of the laser light, when it is illuminated by commercial red or blue semiconductor laser light, the absorption coefficient k of about 1 x 10 ^-1 is sufficient for the mixed material layer.

Although, the transmission of this 40 nm thick ZnS-SiO ₂ (Morby ratio: 50:50-90:10) in the visible light range is about 100%, and if ZnTe or Ag is added, the light transmission decreases, and with ZnTe or The proportion of Ag increases and the light absorption capacity is improved. However, the composition of the mixed material layer is important for producing a microstructure of the following composition: preferably more than 60 mol% of ZnS, 10-30 mol% of SiO ₂ , and less than 30 mol% of ZnTe or Ag.

Unless these conditions are met, this almost hemispherical microstructure may not be formed, which has a smooth terminal by etching. Since the SiO ₂ content in the mixed material layer is 10% by weight or more, it is etched in hydrofluoric acid, but this is almost a hemispherical microstructure preservation because of the irradiation of the received laser light, and The etching resistance for hydrofluoric acid is improved. Since the same element as ZnS is used as the material C when ZnTe is used, the terminal of this microstructure becomes smoother than in the case of using Ag.

In Embodiment 7, since the microstructure 206 is almost hemispherical, the main substrate 200A can be formed. If the pulsed light output of the blue laser ray 204 is 7 mW instead of the microstructure 206 shown in Fig. 16D, as shown in Fig. 17, a microstructure 207 can be formed, the shape of which is thereby Shape This hemispherical structure is formed on this generally cylindrical structure.

For the final etching into the quartz substrate 201, the configuration of the microstructure affects the pattern shape of the recording pit. At this time, it is characterized in that the direction in which the microstructure 207 is used as a mask and etched is almost perpendicular to the case where the microstructure 206 is used.

Example 8

The optical non-reflective film produced is shown in Fig. 18. 18A and 18B are each a cross-sectional view and a top view of an optical non-reflective film. The optical non-reflective film 200B is made of quartz and includes a cylindrical pattern 201b each having a diameter of about 150 nm and a height of about 250 nm, and is disposed at a period of 200 nm.

Compared to the quartz substrate 201 of the same thickness, the optical non-reflective film 200B increases the transmission to light of a wavelength range of 400-600 nm to nearly 100%. This converts the periodic structure into a moth eye Structure to control reflection and transmit light.

The optical non-reflective film 200B was produced in the same manner as in the embodiment 7, except that it was irradiated with blue laser light 204 at a period of 200 nm. After the wafer is formed, the optical non-reflective film 200B is cut into several millimeter angles, and it is obtained by washing to remove impurities.

As shown in Fig. 16D, the microstructures 206 are formed on the quartz substrate 201 as optical non-reflective films. Since the material of the microstructure 206 is different from quartz, the effect of the optical non-reflective film may be degraded, or peeling may occur during the cutting process, and the yield may be lowered. Because of this, if it is necessary to etch to the quartz substrate 201, the pattern can be transferred and reproduced. At this time, the configuration in which the pattern is formed in the surface of the quartz substrate 201 is converted into a shape close to the microstructure 206, which is basically used as a mask.

However, since the etch rate for CF4 of microstructures 206 is sufficiently small, this aspect ratio can also produce a high shape pattern 201b. When reproduced, the pattern can be converted into a material that uses ultra-fine printing techniques, such as thermal ultra-fine printing, optical ultra-fine printing, and soft lithography to make the resin and the main components.

Example 9

The optical non-reflective film produced is shown in Figures 19A-19B. 19A and 19B are each a cross-sectional view and a top view of an optical non-reflective film. In the optical non-reflective film 200C, the microstructure 208 is disposed on the quartz substrate 201 at a period of 400 nm. The material of this microstructure 208 is ZnS, SiO ₂ , and ZnTe-ZnO (Mohr ratio: 64:18:10:8). The microstructure 208 is mostly cylindrical in configuration with an outer diameter of about 300 nm, an inner diameter of about 90 nm, and a height of about 50 nm.

The optical non-reflective film 200C increases transmission to light near the wavelength of 400-600 nm in the vicinity of 100% compared to a quartz substrate of the same thickness. This is used to convert the periodic structure into a moth eye structure by the microstructure 208 to control reflection and transmit light.

This optical non-reflective film 200C is manufactured in the same manner as that shown in Embodiment 7 (ignoring the 16E-16F diagram), except that it is irradiated with blue laser light 204 having a pulse light output of 9 mW at a period of 400 nm. . Since ZnS, SiO ₂ , ZnTe, and ZnO (Mohr ratio: 64:18:10:8) have high transmittance, it is necessary to amplify the pulsed light output of the blue laser light 204. If the pulsed light output of this blue laser ray 204 is changed to 8 mW, as shown in Fig. 20, a microstructure 209 having a cylindrical configuration with a hollow portion and an enlarged bottom will be formed.

Example 10

The information recording medium manufactured is shown in Fig. 21.

The microstructure 211 is disposed on a disk-shaped polycarbonate substrate 210 having a diameter of 12 cm at a period of 160 nm, and this information recording medium 200D has a repeating unevenness of protrusions and grooves. Each microstructure 211 has a diameter of about 90 nm at the bottom, a height of about 30 nm, and an almost hemispherical configuration. In the information recording medium 200D, information is determined by the presence of the microstructure 211.

When the information recording medium 200D is irradiated with the laser light, the microstructure 211 emits fluorescence, and the area where the microstructure 211 is not disposed does not emit fluorescence. For this reason, when the fluorescent detecting optical head is scanned, information can be read from the recording medium based on the detected fluorescent light.

The material of the microstructure 211 is ZnS, SiO ₂ , and CdTe (MoR ratio: 77:20:3), and the microstructure 211 has the same effect as the fluorescent quantum dot. When the information is read, the emitted fluorescent light is focused by using the lens of the optical head, and the fluorescent light is detected by amplifying the fluorescent light through the optical multiplier tube via the optical fiber and the optical filter. Thus, even when the fluorescence is weak, fluorescence can be detected.

This method of manufacturing the information recording medium 200D is the same as that of the embodiment 7 (ignoring the 16E-16F map), except that it is illuminated by the blue laser light 204 having a pulse light output of 8 mW. Although, in Embodiment 10, the information recording medium is formed on the disk-shaped polycarbonate substrate 210, it can be fabricated on a rectangular substrate using an XY stage. In this case, vacuum attraction is performed to the XY stage, and pulsed irradiation of the laser light is performed.

Example 11

The manufactured optical waveguide is shown in Figs. 22A and 22B.

22A and 22B are each a cross-sectional view and a top view of the optical waveguide. The optical waveguide 200E has a periodic region, and the microstructure 213 is disposed on the germanium substrate 212 at a period of 400 nm, and the light having a wavelength of 780 nm is reflected by the following method: the optical band caused by the average refractive index of the periodic region The gap, and the gap of the microstructure 213. No microstructures 213 are formed in the portion of the light travel.

Here, the hemispherical structure formed on the cylindrical structure has a bottom diameter of about 200 nm and a height of about 50 nm. The material of the microstructure 213 is ZnS, SiO ₂ , and ZnO (Morby: 65:20:15).

This method of fabricating the optical waveguide 200E is the same as that of the embodiment 7 (ignoring the 16E-16F map), except that it is illuminated by a blue laser ray 204 having a pulsed light output of 7 mW.

This light crystal using a light band gap can be applied to optical elements other than optical waveguides, such as optical filters and optical switches. Although it does not reflect light and penetrates into the wavelength band near the gap of the optical band, optical properties other than the resolution limit, such as alignment effect and lens effect, appear to be unique in terms of theory and phenomenon. feature. This effect is also required for the optical components of the quartz substrate.

Example 12

The manufactured optical filter is shown in Fig. 23. The optical filter 200F uses a sub-wavelength structure, and the microstructure 214 is disposed on the quartz substrate 201 at a period of 300 nm.

Here, the hemispherical structure formed on the cylindrical structure has a bottom having a diameter of about 200 nm and a height of about 50 nm. The material of this microstructure 214 is ZnS, SiO ₂ , and Au (Moire ratio: 72:18:10).

This method of fabricating the optical filter 200F is the same as that of the embodiment 7 (ignoring the 16E-16F diagram), except that it is illuminated by a blue laser ray 204 having a pulsed light output of 8 mW.

Alternatively, as shown in Figure 24. This quartz optical filter 200G can be formed through the process of the 16E-16F diagram. The optical filter 200G has a pattern 201c arranged in a period, which is the same as that of the optical filter 200F.

When illuminated by laser light, the optical filters 200F and 200G reflect light having a specific wavelength due to the optical band gap, and this filter functions as an optical switch. For example, if this light having a wavelength of 405 nm is incident on the optical filters 200F and 200G while changing the incident angle, the light is reflected at a specific incident angle.

Even though the segments are periodically formed by performing continuous illumination of the blue laser ray 204, the linear microstructure is mostly rectangular rather than microstructure 214, resulting in an effect as an optical switch. When a linear microstructure is formed, the effect as an optical switch is obtained from each other, and also as the structure of the shape of the vertical mesh of the net. The LER is also smaller than the value of the impedance in photolithography and is set to 1 nm or less.

The optical filter operates according to a sub-wavelength structure, and the band gap acts as: optical filtering , it reflects light of a specific wavelength, or an optical switch. The angle of incidence and the wavelength of the reflected light depend on the sub-wavelength structure or the photocrystal of each other. The same phenomenon is used, and the optical filter and the optical switch act as optical filters to completely transmit light of a specific wavelength. This becomes an optical switch to be used as an optical element to control the ON and OFF of light transmission.

Example 13

25A to 25D are photographs showing the scanning electron microscope of the microstructure of Example 13. The microstructure is formed on a polycarbonate substrate with a track pitch of 400 nm (line width of 200 nm runway trench width of 200 nm) and materials of ZnS, SiO ₂ , and Ag (Morror ratio: 72: 18:10).

This microstructure is fabricated in the same manner as shown in Embodiment 7, except that it changes the pulsed light output of the blue laser light 204, and the splash target used is ZnS, SiO ₂ , and Ag (Motor) Ear ratio: 72:18:10) formed.

The pulse light outputs of the 25A, 25B, 25C, and 25D are each 6.5 mW, 7.0 mW, 8.0 mW, and 9.0 mW. The microstructure in Fig. 25A or Fig. 25B is in a hemispherical configuration; the microstructure in Fig. 25C is in a configuration in which a hemispherical structure is formed on a cylindrical structure; and in Fig. 25D The microstructure is in a cylindrical configuration. The configuration of such microstructures can be evaluated by using a transmission electron microscope, an atomic force microscope, rather than using a scanning electron microscope.

Figure 26 shows the relationship between the pulsed light output and the outer diameter or inner diameter of the microstructure. As shown in Fig. 26, the pulsed light output increases as the diameter of the microstructure increases, and the hollow portion (opening) is generated at the center of the microstructure at 9 mW. The size of this microstructure can be varied with the pulse width as the laser light is illuminated (irradiation time). In this case, the pulse width is in the range of 10 to 15 nanoseconds. Although the size of the microstructure is varied for the pulsed light output depending on the composition ratio, material, etc., the same pulse light output dependence can be seen when using materials other than Ag.

27A and 27B show scanning electron micrographs of another example of the microstructure of Example 13. The microstructure is formed on a polycarbonate substrate, wherein the pitch of the protrusion trenches is 400 nm (line width: 200 nm, trench width: 200 nm), and the materials used are ZnS, SiO ₂ , and ZnTe (moire ratio: 68:17:15).

The method of fabricating the microstructure is the same as that of the embodiment 7, except that the pulse light output of the blue laser light 204 is changed, and two splashes of ZnTe and ZnS-SiO ₂ (moire ratio: 80:20) are used. target. The composition of the film formed by this splash method is checked by elemental analysis. The pulse light output of Fig. 27A is 6.0 mW, and the pulse light output of Fig. 27B is 7.0 mW.

Fig. 28 shows a scanning electron micrograph of another example of the microstructure of Example 13. The microstructure is formed on a polycarbonate substrate, wherein the pitch of the protrusions to the trenches is 400 nm (line width: 200 nm, trench width: 200 nm), and the materials used are ZnS, SiO ₂ , and Au (Mohr ratio). :72:18:10).

The method of fabricating the microstructure is the same as that of the embodiment 7, except that the blue laser light 204 has a pulse light output of 3.0 mW, and two of Au and ZnS-SiO ₂ (moire ratio: 80:20) are used. Splash target.

When the 25A-25D map, the 27A-27B map, and the 28th graph are compared, the result is that the terminal of the microstructure of the 27A-27B graph is the smoothest. By using the same materials as the microstructures of FIGS. 25A-25D, 27A-27B, and 28, and performing continuous irradiation of laser rays to make such linear microstructures, and comparing the LERs In the case where the same material as the microstructure of Fig. 27 is used, the LER is the smallest. This is because Zn is contained in the material A' and the material C as a common element.

The reason why this can be made into a microstructure is to use any of Al, Cu, Pt, Sb, Te, Ge, Si, Bi, Mn, W, Co, Nb, and such alloys as InSb, AgInSbTe, GeSbTe. Anyone as material C. Similarly, the reason why this can be made into a microstructure is to use: ZnMgTe, CsZnTe, ZnMgSSe, SbZn, ZnCrO ₄ , ZnCrO ₃ , ZnWO ₄ , ZnTiO ₃ , Zn ₃ N ₂ , ZnF ₂ , ZnSnO ₃ , ZnMoO ₄ , Any of GeS ₂ , CoS, SnS, etc. If a material having a relatively large transmittance for blue laser light is used as ZnO as material C, and if the materials used are ZnS, SiO ₂ , ZnTe, and ZnO (64:18:10:8), A microstructure with a smooth termination is made. Moreover, when any of ZnSe, MnS, and SrS is used as the material C, a microstructure having a smooth terminal can be produced.

Example 14

The manufactured optical non-reflective film 200B is shown in Figs. 18A and 18B. This optical non-reflective film 200B is formed of quartz, and this cylindrical pattern 201b having a diameter of about 150 nm and a height of about 250 nm is arranged at a period of 200 nm. When compared with a quartz substrate of the same thickness, the optical non-reflective film 200B has an increased transmission of light having a wavelength in the range of 400 to 600 nm, and the increased transmission is almost 100%. This is because the periodic structure is transformed into a moth-eye structure, which avoids reflection and allows light to pass through.

The method of manufacturing the optical non-reflective film 200B is the same as that of the embodiment 7, except that the irradiation of the blue laser light 204 is performed at a period of 200 nm, and a mixture of FeS-SiO ₂ (moire ratio: 80:20) is formed. Material layer 202, and two splash targets of Au and ZnS and SiO _{2 were used} . After the optical non-reflective film 200B is formed using a wafer, the wafer is divided into a few millimeters by cutting the wafer, and the optical non-reflective film 200B is obtained by cleaning to remove impurities.

ZnS, CaS, and SrS are almost transparent in the visible range and have a small optical absorption capacity. In contrast, in such sulfur compounds, FeS has a relatively large optical absorption capacity. FeS-SiO ₂ (Morby ratio: 80:20) absorbs this laser light having an emission wavelength in the visible range. For this reason, FeS acts as a material for improving the optical absorption capacity.

As shown in Fig. 16D, an optical non-reflective film may also be used in which the microstructures 206 are formed on the quartz substrate 201. Since the material of the microstructure 206 is different from quartz, there is a case where the optical non-reflective film effect is weak, or peeling occurs at the time of the cutting process, and the yield becomes low. To avoid this, a pattern shift can be performed on the surface of the quartz substrate 201 after the etching is performed, if necessary. At this time, the configuration of the pattern formed on the surface of the quartz substrate 201 is substantially similar to the configuration of the microstructure 206 used as a mask. However, since the etch rate for CF4 of microstructures 206 is sufficiently small, the pattern can be formed in configurations with large aspect ratios.

When remanufacturing is carried out, the pattern can be transferred to a material containing a resin as its main constituent by using ultra-micro printing techniques such as thermal ultra-fine printing, optical ultra-fine printing, or soft lithography.

Example 15

Figures 29A through 29D show photographs of the scanning electron microscope of the microstructure of Example 15. This microstructure was formed on a polycarbonate substrate in which the pitch of the protrusion grooves was 400 nm (line width 200 nm, groove width 200 nm), and the material used was ZnS-SiO ₂ (molar ratio: 80:20).

The microstructure was fabricated in the same manner as in Example 7, except that a mixed material layer 202 of ZnS-SiO ₂ (Morby ratio: 80:20) was formed, and two splash targets of FeS and SiO _{2 were used} . And changing the pulsed light output of the blue laser light 204. The pulse light outputs of the 29A, 29B, 29C, and 29D are each 1.5 mW, 2.0 mW, 3.0 mW, and 4.5 mW.

The microstructure in Fig. 29A is in a hemispherical configuration; the microstructure in Fig. 29B or 29C is in a configuration in which a hemispherical structure is formed on a cylindrical structure; and in Fig. 29D The microstructure is in a cylindrical configuration. The size of this microstructure varies depending on the pulse width of the laser light or the pulsed light output.

30A and 30B show photographs of a scanning electron microscope of another example of the microstructure of Example 15. The microstructure was formed on a polycarbonate substrate in which the pitch of the protrusion grooves was 400 nm (line width 200 nm, groove width 200 nm), and the material used was FeS-SiO ₂ (moire ratio: 76:24).

The microstructure was fabricated in the same manner as in Example 7, except that a mixed material layer 202 of FeS-SiO ₂ (Morby ratio: 76:24) was formed, and two splash targets of FeS and SiO _{2 were used} . And changing the pulsed light output of the blue laser light 204. The pulse light outputs of Figs. 30A and 30B are each: 1.1 mW and 1.4 mW.

The microstructures 206 are formed by illumination with blue laser light 204, immersion in hydrofluoric acid 205, and etching. In the region illuminated by the blue laser light 204, FeS and SiO ₂ can be systemized, and the etching resistance to hydrofluoric acid 205 can be improved.

Example 16

A microstructure 208 constructed as shown in Fig. 19 is formed on the quartz substrate 201. The material of the microstructure 208 is ZnS, SiO ₂ , and Au (Mohr ratio: 72:18:10). At this time, a glass carrier can be used instead of the quartz substrate 201.

The manufacturing method of the microstructure 208 is the same as that of the embodiment 9, except that the pulse light output is 8 mW each. Next, a DNA wafer was produced in the following manner. By using an inkjet system, 10,000 or more DNA fragments are arranged and fixed as micro on the quartz substrate 201. Point, and a microstructure 208 is formed on the substrate. This ink jet method is advantageous for controlling the amount released from the exit aperture.

The DNA wafer is reacted (mixed) with the sample DNA, and the genes found in the sample DNA are labeled with the fluorescent coloring substances Cy3 (green) and Cy5 (red). The micro dots having the corresponding DNA are colored due to the reaction of complementary DNA with each other. The color of these microdots can be read using a high resolution DNA wafer analysis device, and functional data of the sample DNA can be obtained from DNA on the DNA wafer.

Mass production of DNA wafers is possible in the following manner. The flat disk-shaped quartz substrate 201 as in Embodiment 7 is rotated, so that the DNA wafer is formed on a wafer having a large area, and the wafer is cut into such DNA wafers by cutting. For example, a DNA wafer having a size of about 4 square millimeters can be produced at low cost. DNA wafers can be made using the XY platform.

In order to improve the detection efficiency of DNA, it is important to arrange and fix DNA fragments as micro-dots. The microstructure configuration of Example 16 has a large specific surface area. At this time, the DNA wafer of Example 16 can be produced at a low cost when compared with a DNA wafer produced by using lithography or the like. The microstructure in the cylindrical configuration shown in Figures 19A-19B is currently unique to thermo-lithography and has a relatively large specific surface area.

The DNA wafer can be made using materials and manufacturing methods other than those in Example 16. At this time, some kind of oxygen deficiency occurs in SiO ₂ . As the material C, a material for improving the optical absorption ability such as a metal or an alloy can be used. When a fluorescent material such as CdTe or CdSe is selected as the material C, fluorescence detection can be used. When a metal such as gold is used as the material C, a plasma exciton effect can be expected.

Example 17

Figure 32 shows the composition of the polarized splitter element 300 of Example 17. The polarization polarizer element 300 includes a ZnS layer 302 formed on the polycarbonate substrate 301, and a linear microstructure 303 periodically disposed on the ZnS layer 302. The polarization polarizer element 300 has a function of separating the light rays 310 having a specific wavelength into P-polarized light rays 311 and S-polarized light rays 312 according to the characteristics (period, refractive index) of the polarization separator element 300. The light of the P-polarized wave is a polarization component, wherein the vibration plane of the electric field vector is parallel to the incident plane; The light of the S-polarized wave is a polarization component, wherein the vibration plane of the electric field vector is perpendicular to the incident plane.

33A and 33D are diagrams for explaining the method of manufacturing the polarization separator element 300 of Embodiment 17. First, a main substrate, a stamper, and injection molding are used through a known optical disc manufacturing process to manufacture a 0.6 mm thick polycarbonate substrate 301 in which unevenness (protrusions and grooves) having a height of 20 nm and a pitch of 200 nm is formed concentrically. The shape of the circle. Next, a 10 nm thick ZnS layer 302, a 200 nm thick ZnS, SiO ₂ , and Zn (Morby ratio: 64:13:33) mixed material layer 304 are used in this order via RF splashing (from Shibaura Mechatronics). Co.) a splash device CFS-8EP-55 (refer to Fig. 33A) deposited on a polycarbonate substrate 301.

This blue laser light 306 having a wavelength of 405 nm from a laser light irradiation device (from Shibasoku Co.) is concentrated by an objective lens 305 having a 0.85 NA and focused on the surface of the mixed material layer 304 in which tracking is performed. This laser light was continuously applied to the rotated polycarbonate substrate 301 with a 3.5 mW optical output (refer to Fig. 33B).

Then, the polycarbonate substrate 301 was immersed in hydrofluoric acid 307 having a weight of 2% for 10 seconds and etching was performed (refer to Fig. 33C). After washing it with pure water, it is dried to obtain the polarized separator element 300 in which the microstructure 303 is periodically configured (refer to Fig. 33D).

This mixed material layer 304 is suitably illuminated by the laser ray 306 to remain unetched and converted into a microstructure 303. In Embodiment 17, a part of the mixed material layer 304 is formed to exist as a protrusion (convex), and a part of the mixed material layer 304 is formed as a groove (recess) to be removed. For this reason, adjacent microstructures 303 are interconnected.

Figures 34A and 34B show scanning electron micrographs of the polarized splitter element 300 of Example 17. Figure 34A is a top view of the polarized splitter element, and Figure 34B is a perspective view of the polarized splitter element when a focused ion beam (FIB) is used to form a cross section of the polarized splitter element 300. To form a cross section, a carbon protective layer 308 is deposited on top of the microstructure 303 in FIG. 34B.

As is apparent from the 34A-34B diagram, the linear microstructures 303 are periodically disposed in the polarization splitter element 300. The polarized splitter element in which the linear pattern is formed in this manner is referred to as a wire grid polarizer.

By entering the S-polarized light into the polarization splitter element 300 (see Figure 33A), The polycarbonate substrate 301, the ZnS layer 302, and the mixed material layer 304 are formed therein, and the dependence of the transmission wavelength on the S-polarized light can be measured as shown in FIG. Similarly, the measurement point is approximately 3 mm in diameter by entering the S-polarized light into the polarized splitter element 300 rotated 90 degrees and using the high-speed spectral ellipter M-2000DI (from JAWoollam, Japan) as the measuring device. And this measurement is performed using linear polarization in the transmission measurement mode.

At this time, the size of the polarization splitter element 300 is larger than the diameter of the measurement point.

As is apparent from Fig. 35, the central wavelength in the case where the polarization polarizer element 300 is not rotated by 90 degrees is about 747 nm, and the drop can be seen. The drop was not seen in the case where the polarized splitter element 300 was rotated 90 degrees. Therefore, the polarization splitter element 300 has a polarization separation function in the wavelength range of 650-840 nm around a central wavelength of about 747 nm.

Next, a polarized splitter element 300 is fabricated in the same manner as the above example, except that the continuous optical output of the laser ray 306 is changed to 3.0 mW and 2.5 mW.

Figures 36A and 36B show scanning electron micrographs of the polarized splitter element 300 when the continuous optical output is set to 2.5 mW. Figure 36A is a top view of the polarized splitter element, and Figure 36B is a perspective view of the polarized splitter element when a focused ion beam (FIB) is used to form a cross section of the polarized splitter element 300. To form a cross section, carbon 308 is deposited on top of microstructure 303 in Figure 36B.

Figure 37 shows the dependence of the transmission wavelength of the polarized splitter element 300 on the S-polarized light, as is evident from Figure 37, where the polarized splitter element 300 is rotated 90 degrees and will continue to optical output. In the case of setting to 2.5 mW, no drop (dip) similar to the above example was observed. In the case where the polarization polarizer element 300 is not rotated by 90 degrees, in any of the cases where the continuous optical output is set to 3.5 mW, 3.0 mW, and 2.5 mW, the drop can be seen, and when the optics are continued In the case where the output is set to a large value, the falling depth is large, and it is shifted to the low wavelength side.

The etching rates of ZnS, SiO ₂ , and Zn (Moire ratio: 64:13:33) for 2% by weight of hydrofluoric acid were measured. In the case of non-tempering, the etching rate is approximately 5.26 nm/second. In the case where tempering was performed at 500 ° C for 30 minutes using an electric furnace (air atmosphere), the etching rate was about 0.17 nm / sec. This result shows that the etching rate ratio (ratio of non-tempering to tempering) by the tempering is about 33, and the etching resistance is rapidly improved by tempering.

Regarding laser light irradiation and tempering, this is different from the time at which the maximum temperature is reached, but it is consistent due to the heat supplied. For this reason, in Embodiment 17, the supply of heat by the laser ray 306 is mentioned as one of the factors for which the patterning of the mixed material layer 304 is performed in the following manner: by immersing the layer It is etched in hydrofluoric acid 307 and after being irradiated with laser light 306.

Moreover, almost the same etching selectivity can be obtained when the same experiment is performed using ZnS-SiO ₂ (Morby ratio: 80:20), and crystallization of ZnS can be presumed to be such that the etching resistance is largely changed.

When a film formed of ZnS, SiO ₂ , and Zn is tempered at 500 ° C for 30 minutes in the atmosphere, the transmission increases in the visible range, and the diffracted X-ray peak of the ZnO can be seen by X-ray diffraction. Out. That is, check the oxidation of Zn. For this reason, it is also presumed that Zn is oxidized by irradiation of the laser beam 306 in the mixed material layer 304.

That is, if the mixed material layer 304 is illuminated by the laser ray 306, the optical absorption capacity of the Zn will absorb the laser ray 306, and this layer is oxidized and its transmission in the visible range of the microstructure 303 is increased. At this time, since it is transparent in the visible light range, when ZnS and SiO ₂ emit laser light 306, patterning of the transparent material is performed.

The light transmission in the sample, in which a 100-nm-thick ZnS layer is formed on a glass substrate having a light transmittance of 93%, the light transmittance of the sample in the wavelengths of 300 nm, 405 nm, and 550 nm is: about 20 %, approximately 60%, and approximately 90%.

On the other hand, in the wavelength range of 200-1700, the light of SiO ₂ is transmitted by more than 90%. At this time, the pattern formation of ZnS-SiO ₂ (moire ratio: 80:20) can also be carried out by irradiating light; this light is absorbed by ZnS-SiO ₂ (moire ratio: 80:20), for example: this wavelength It is a 266 nm deep ultraviolet (DUV) laser beam and an extreme ultraviolet (EUV) laser beam with a wavelength of 13.5 nm.

However, the device becomes expensive and also requires irradiation time, so that the wavelength of the emitted laser light becomes short. In Embodiment 17, since the optical absorption capacity of the mixed material layer is improved and vacuum is not required, the microstructure can be formed by irradiating semiconductor laser light, and the visible range of the laser light is, for example, a wavelength of 405 nm, 650 nm, and 780nm. It is also possible to use the polarization splitter element 300 as a diffraction grating.

Example 18

The optical filter produced is shown in Fig. 38. Regarding the optical filter 400, a ZnS layer 402 is formed on the polycarbonate substrate 401, and a micro-dot-like structure 403 is periodically formed on this layer. For this reason, it has a function according to the characteristics (period, refractive index) of the optical filter 400 to reflect the P-polarized light 411 or the S-polarized light 412 of the specific wavelength ray 410.

A method of manufacturing the optical filter 400 is shown in Figs. 39A-39D. First, a process for producing a general optical disc having a height of 400 nm from a polycarbonate substrate 401 having a thickness of 0.6 mm and unevenness (protrusions and grooves), a main substrate, a stamper, and an injection model according to the method is used. And form a concentric shape.

Next, the mixed material layer 404 having a thickness of 200 nm formed by the 10-nm-thick ZnS layer 402 is sequentially formed on the polycarbonate substrate with ZnS, SiO ₂ , and Zn (moire ratio: 64:13:33). 401. This was formed by RF splashing using a splash device CFS-8EP-55 (from Shibaura Mechatronics Co.) (see Figure 39A).

The wavelength of the blue laser light 406, by the wavelength of the light, is such that the numerical aperture (NA) of the laser beam irradiation apparatus (manufactured by Shibasoku Co.) is focused at an objective lens 405 of 0.85, and the wavelength of the light is 405 nm. This focusing is performed on the surface of the mixed material layer 404, and tracking is performed by the focus, and pulsed light irradiation is performed thereon, and pulse light of 10 mW is output to the polycarbonate substrate 401 to be rotated (refer to FIG. 39B). ).

Then, it was immersed in hydrofluoric acid 407 having a weight of 2% for 10 seconds and after etching (refer to Fig. 39C), and it was washed with pure water and dried, and the optical filter 400 obtained was obtained. The microstructure 403 is periodically configured (refer to Figure 33D). At this time, the mixed material layer 404 which is sufficiently irradiated with the laser light 406 remains, and it becomes the microstructure 403. The gap between the microstructures 403 in the track direction is about 400 nm.

Scanning electron micrographs of the optical filter 400 are shown in Figures 40A and 40B. The photographs of Figs. 40A and 40B are each taken from the top surface direction and the oblique direction.

By entering the S-polarized light 412 into the optical filter 400 and the polycarbonate substrate 401, the dependence of the wavelength on the S-polarized light can be measured, as shown in FIG. Similarly, the dependence of the wavelength on the S-polarized light is measured by entering the S-polarized light 412 into an optical filter 400 that is rotated 90 degrees. In this measurement, a high-speed spectral ellipmeter M-2000DI (from J.A. Woollam, Japan) was used as a measuring device, and the measuring point has a diameter of about 3 mm, and this measurement It is implemented using linear polarization in the transmission measurement mode.

In the case where the optical filter 400 is not rotated by 90 degrees, 674 nm and 701 nm are made as the central wavelength of the optical filter 400, which relatively appears to be a narrow drop in the line width, and for the 41st picture rotated by 90 degrees, As a result, the decrease can be seen by making 655 nm into the center wavelength.

Thus, optical filter 400 has the function of filtering the polarization of a particular wavelength range. At this time, this reflection factor measurement shows that the light corresponding to the falling wavelength is not transmitted and is reflected.

Secondly, in addition to changing the pulsed light output of the laser beam 406, when the optical filter 400 is fabricated as described above, it can be seen that the tendency for the depth of fall is that the larger the pulse light output is, the deeper the drop. In this case as well, in Example 17, the patterning of the transparent material is carried out by irradiating the laser beam 406.

Example 19

As an example of the light-emitting device, the inorganic electroluminescence (EL) element 500A shown in Figs. 42A and 42B is formed. In an EL element, light is generated by recombination of a positive hole and a negative electron. Although a flat substrate is generally used in an EL element, if such a substrate is used to form an uneven pattern, incident light rays smaller than a critical angle are transmitted according to an acid impedance effect, and incident light exceeding a critical angle cannot be extracted, and usually Can be taken as a diffracted light. Therefore, the optical pickup efficiency is increased to about 1.5 times.

This inorganic EL element 500A includes a polarization splitter element 300 (diffraction grating) in which a ZnS layer 302 is formed on a polycarbonate substrate 301, and a linear microstructure 303 is periodically formed on the ZnS layer 302. On the surface of the polycarbonate substrate 301 on which the microstructures 303 are not formed, they are sequentially stacked in the following order: a cathode 501 formed of indium tin oxide (ITO), and a ZnS-Mn content (% by weight of Mn) Percent), and an anode plate 503 formed of aluminum.

Similar to the inorganic EL element 500A, the inorganic EL element 500B has a diffraction grating, and the cathode 501, the light-emitting layer 502, and the anode plate 503 are sequentially stacked on the microstructure 303 in this order.

In this embodiment, each of the microstructures 303 has a high transmission in the visible light range, and it is suitable as a material constituting the EL element.

If a DC voltage or an AC voltage is applied between the cathode 501 and the anode plate 503, In order to see the yellow-orange light emission (central wavelength: 585 nm), and in the case of the inorganic EL elements 500A and 500B, the luminous efficiency (optical extraction efficiency) is increased from the case where the microstructure 303 is not formed.

In Example 19, ZnS-Mn was used for the light-emitting layer 502, but the present invention is not limited to this embodiment. Alternatively, any other luminescent material may be used, such as: CaSSe-Eu, CaS-Eu, SrS, Cu, SrS-Ce, BaAl ₂ S ₄ -Eu, BaZnS ₃ -Mn, and ZnMgO.

Further, the organic EL device can be formed in the following manner: by using, for example, an organic light-emitting material for the light-emitting layer 502 based on a phenylene-vinylene group and an arylene group; and supplying a DC voltage.

Example 20

The dye-sensitive solar cell 600 shown in Fig. 43 is produced as an example of a photoelectric converter. The photoelectric converter has a photoelectric conversion layer that absorbs light to convert it into electricity. The amount of light absorbed is increased as the thickness of the photoelectric conversion layer increases. This photoelectric conversion layer formed of a germanium semiconductor or an organic semiconductor has a photovoltaic effect. If the p-n junction portion or the Schottky junction portion is irradiated by the laser line, the generated electrons and the positive holes are separated from each other by the interface electric field, and a potential difference is generated therebetween.

Generally, a flat substrate is used for the photoelectric converter. If an uneven pattern is formed in this substrate, multipath reflection increases in this photoelectric conversion layer, and the photon inclusion effect is improved. Therefore, the photoelectric conversion efficiency is increased by 3% to 5%.

Similar to Example 17, in this dye-sensitive solar cell 600, a linear microstructure 602 is formed on a flat glass substrate 601, and a cathode 603 is formed on the microstructure 602.

The photoelectric conversion layer 606 is disposed between the anode plates 605 and formed on the glass substrate 604 and the cathode 603. The coloring matter titanium dioxide is an electrolyte, and a redox pair is contained in the photoelectric conversion layer 606.

As a coloring matter, RuL2(NCS)2 (L=4,4'-bisxyzol-2,2'-bisaza(hetero)benzene is a ruthenium complex used in this embodiment. However, this The invention is not limited to this embodiment. Alternatively, another color-developing substance such as a P- or a cyanine group may be used instead.

As the titanium oxide, the particles have a particle diameter of about 10 to 30 nm and are used in the present embodiment. The X-ray diffraction of the titanium dioxide particles shows that most of them are anatase type. Titanium dioxide can be formed by splashing. If amorphous is included, its photoelectric conversion efficiency is lowered. in order to avoid In this case, particles having a high degree of crystallinity are preferably used.

As the electrolyte and the redox pair, this electrolytic solution Iodolyte TG 50 (where 0.5 M lithium iodide LiI) for low output battery (from Solaronix Co.) and 0.05 M metal iodine (in this example) were used in this example ( I2) is added to polyethylene glycol having a molecular weight of 200). However, the invention is not limited to this embodiment. As the electrolyte, a cation such as a lithium ion, and an anion such as a chloride ion can be used. As the redox pair, any of an iodine-iodine complex and a bromine-bromine complex can be used.

In the photoelectric conversion layer 606, the coloring matter absorbs light to emit electrons, and the titanium dioxide (TiO ₂ ) of the semiconductor receives electrons and transfers it to the cathode 603. These holes (h+) are stored in the coloring matter to oxidize the iodide ion (I-), and form a triiodide ion (I3-). This I3- is reduced by the cation plate 605. Electricity is generated by repeating the above cycle.

As the cathode 603 and the anode plate 605, indium tin oxide (ITO: 5% tin oxide, 95% indium oxide) can be used in the present embodiment. However, the invention is not limited to this embodiment. Alternatively, an FTO film can be used in which fluorine is doped to tin oxide.

The microstructure 602 can be formed on a polycarbonate substrate or the like instead of the quartz glass substrate 601. However, in the photoelectric converter, the temperature is increased to about 500 ° C when ITO is formed, and a glass substrate 701 having a good thermal resistance is generally used. The microstructure 602 in this embodiment comprises ZnO.

The microstructure 602 can also be applied to solar cells other than dye-sensitive solar cells, such as germanium thin film solar cells, CIGS solar cells (Cu (Inl-x, Gax) Se ₂ ), and copper-indium-gallium-selenium materials. Solar battery.

Example 21

The resulting aspherical optical lens is shown in Figures 44A and 44B. Figure 44A is a perspective view of a non-spherical optical lens, and Figure 44B is a cross-sectional view of a non-spherical optical lens. The largest diameter is about 2 microns and its height is about 2.5 microns. This aspherical optical lens 700 is of a nearly hyper-hemispherical configuration and has a maximum diameter that is slightly larger than the diameter of the lens that is in contact with the quartz substrate 701.

This is about 90% transmission for light having a wavelength of 660 nm, and this aspheric lens 700 has sufficient transmission in the visible light paradigm.

This aspherical surface optical lens 700 can be made in the same manner as in Embodiment 18, The same uses a flat quartz substrate 701 instead of the polycarbonate substrate 401, and uses a laser light having a wavelength of 780 nm instead of a blue laser light 506 having a wavelength of 405 nm.

From the results of the powder X-ray diffraction, it was found that the aspherical optical lens 700 has a very weak Zn peak and a strong ZnO peak. This shows that Zn is mostly oxidized and forms ZnO. Therefore, the transmission of this aspherical optical lens 700 in the visible range increases.

From the results of the film tempering experiment, it can be estimated that the refractive index of the aspherical surface optical lens 700 is about 2.2. This non-spherical optical lens 700 has a refractive index larger than that of quartz and contains an inorganic material, and its reliability is high. This aspherical surface optical lens 700 can be fabricated on a quartz substrate 701 and can be easily divided into such sheets.

The configuration of this aspherical optical lens 700 is not limited. The non-spherical optical lens 700 can be configured in a hemispherical configuration by varying the pulsed light intensity of the laser beam 506 or the thickness of the mixed material layer 504.

Next, an embodiment of the present invention for writing an information recording medium will be described with reference to the accompanying drawings.

The cross-sectional structure of the write-once information recording medium of Embodiment 1 (an example in which the present invention writes an information recording medium) is shown in Figs. 45A and 45B. Fig. 45A shows the state before the recording of the optical recording medium before being irradiated by the laser light, and Fig. 45B shows the state after the recording of the optical recording medium by the laser light. The description of Figures 45A and 45B is for illustrative purposes and does not correspond to actual thickness or size.

In the write-once optical recording medium of Embodiment 1, the track pitch was 0.32 μm, and the carrier-to-noise ratio (CNR) was 45 dB, and the recording mark period was 300 nm. This substrate 1 is a polycarbonate substrate having a repeating unevenness of protrusions and grooves and having a track pitch of 0.32 μm. On the substrate 1, sequentially deposited in the following order: a reflective layer 2 having Ag having a thickness of 40 nm; a dielectric layer 3 having a thickness of 50 nm of ZnS-SiO ₂ (moire ratio: 80:20); having a thickness of 15 nm a recording layer 4 of ZnS, SiO ₂ , ZnTe (molar ratio: 70:20:10); a dielectric layer 5 having a thickness of 40 nm of ZnS-SiO ₂ (moire ratio: 80:20); and having a thickness of 100 Micron light transmissive protective layer of acrylic resin 6.

If the recording layer 4 of the optical recording medium of the first embodiment is written by the laser light using the optical pickup recording mark 7, the mark is formed by the cavity, and can be formed in the recording layer 4 as in the 45B chart. So that the information is recorded in the recording layer 4.

The write once optical recording medium of Example 1 was produced in the following manner. That is, the polycarbonate substrate 1 has a repeating unevenness in the pitch of the projections from the groove of 0.32 μm, and is formed by injection molding using a stamper. Next, the reflective layer 2 (Ag, thickness: 40 nm), the lower dielectric layer 3 (ZnS-SiO ₂ , molar ratio: 80:20, thickness: 50 nm), the recording layer 4 (ZnS, SiO ₂ , ZnTe, Mohr) Ratio: 70:20:10, thickness: 15 nm), and upper dielectric layer 5 (ZnS-SiO ₂ , molar ratio: 80:20, thickness: 40 nm), in this order, used (from Shibaura Mechatronics Co.) The splash device CFS-8EP-55 is sequentially deposited on the substrate 1 by splashing.

Then, spin coating of an acrylic resin was carried out on the dielectric layer 5, hardening by ultraviolet irradiation was performed, and a protective layer 6 (light transmissive type, thickness: 100 μm) was formed.

Recording and reproduction of the information recording medium of the first embodiment is carried out in the following manner. That is, the blue laser light (wavelength: 405 nm) is: by having the objective lens 12 (lens NA: 0.85) having the optical light irradiation device as shown in Fig. 48B, focusing on the recording On the surface of layer 4. This focusing is performed from the side of the protective layer 6, which is modulated by multiple pulses in accordance with a predetermined recording strategy (controlled by the emission waveform of the laser light at the time of recording), and random data is recorded in the recording layer 4.

Similarly, this information is reproduced from the recording medium by continuously irradiating the laser light (wavelength: 405 nm) using optical pickup, and the reproduced signal is observed. In this manner, this information is reproduced based on the random data recorded in the recording layer 4 of the optical recording medium of the first embodiment, and the function and performance of the write-once optical recording medium of this embodiment 1 are examined.

After the recording, when the surface configuration was examined using an atomic force microscope (AFM), the cavity and the expansion were observed in the region where the recording marks were formed in the recording layer 4 of the optical recording medium.

This expansion includes a microcavity therein. Each cavity and expansion is generated after the recording layer 4 is irradiated with laser light to perform recording, and the reflection factor of the recording layer 4 changes before and after recording due to the existence of the cavity and the expansion. And it is confirmed that the information based on the above random data is recorded in the recording layer 4, and the information is reproducible.

The following experiment was conducted to observe that the cavity and the expansion existing in the recording mark were formed in the recording layer 4 of the optical recording medium in which the writing of the first embodiment was performed.

That is, the observed sample is formed in the following manner. Recording layer 4 of ZnS, SiO ₂ , ZnTe (molar ratio: 70:20:10, thickness: 40 nm) was formed by sputtering (from Shibaura Mechatronics Co.) splash device CFS-8EP-55 by sputtering On the substrate 1. The recording layer of this sample was subjected to pulsed laser irradiation (wavelength: 405 nm, objective lens NA: 0.85). Pulsed laser irradiation was performed at intervals of 400 nm, and the linear velocity was 4.5 m/sec.

Scanning electron microscope (SEM) photographs of the recording marks formed at the surface of the sample (this recording layer 4) at this time are shown in Figs. 46A and 46B. In the state in which the optical recording medium is written once, the protective layer 6 is stacked on the recording layer 4, and it is difficult to observe the surface state of the recording layer 4. In these experiments, the above samples were prepared, and the recording marks formed in the recording layer 4 were observed.

Fig. 46A shows an SEM photograph when the laser light irradiation intensity is 6 mW, and Fig. 46B shows an SEM photograph when the laser light irradiation intensity is 7 mW.

In the case of Fig. 46B, a hole 9 having a diameter of about 80 nm is formed on almost all of the portion irradiated with the laser light. In the case of Fig. 46A, the portion irradiated with the laser light is in an expanded state, and the cavities are formed in the laser irradiating portion 8, which are similar to those measured by AFM or transmission electron microscope (TEM). Earth observation.

It is estimated that this expansion (state) and cavity cause a change in the reflection factor in the information recording medium in which the present invention is written. Although the spot diameter of the laser light is about 400 nm, the advantage of writing an information recording medium of the present invention is that such holes having a diameter of 80 nm can be formed which are sufficiently smaller than the dot diameter.

The mixed inorganic material constituting the recording layer 4 in the information recording medium of the first embodiment comprises: zinc sulfide (ZnS) as the sulfur composite of the material A; cerium oxide (SiO ₂ ) as the cerium oxide of the material B; And zinc lanthanum (ZnTe) is used as the material C. This ZnS-SiO ₂ (moire ratio: 50:50-90:10) having a thickness of 15 nm is transmitted through light having a thickness equal to that of the recording layer 4 in the information recording medium of the first embodiment, which is about 100%. . That is, ZnS-SiO _{2 is} equivalent to the mixed inorganic material to constitute the recording layer 4, and thus the ZnTe of the material C is excluded. This shows that by adding this as ZnTe of material C, the transmission of light in the visible range of this ZnS-SiO ₂ is reduced.

In particular, when light in the visible range is transmitted through a layer formed of ZnS-SiO ₂ (material A and material B), and by ZnS, SiO ₂ , and ZnTe (mixed inorganic material: material A, material: B, and when the layers formed by the material C) are compared with respect to the same thickness, the result is that as the content ratio of ZnTe increases, the overall transmission decreases (from 100% to 60%), but the optical absorption capacity increases. (The absorption coefficient k increases from the order of 10 ^{-1 to} the order of 10 ^-3 ). The optical absorption capacity is measured using a spectroscopic elliptical.

The absorption coefficient k of ZnS-SiO ₂ (molar ratio: 80:20) is about 1 x 10 ^-3 at a wavelength of 405 nm. On the other hand, the absorption coefficient k of the recording layer 4 formed by mixing the inorganic material is about 1 x 10 ^-1 at a wavelength of 405 nm. Therefore, in Embodiment 1, since the material C is added to the recording layer, the result is that the absorption coefficient k is about 1×10 ^-1 , and the blue semiconductor laser light can be easily absorbed. This absorption coefficient k was measured using a spectroscopic elliptical device (from JA, Woollam, Japan VASE).

In the write-once information recording medium of the embodiment 1 shown in Figs. 45A and 45B, the recording layer 4 is interposed between the lower dielectric layer 3 and the upper dielectric layer 5. On the other hand, in the write-once information recording medium of the embodiment 2 shown in FIGS. 47A and 47B, the lower dielectric layer 3 and the upper dielectric layer 5 are not present, but the recording layer 4 is formed on the substrate 1, and The protective layer 6 is formed directly on the recording layer 4. The thickness of the recording layer 4 in Example 1 was 15 nm, but the thickness of the recording layer 4 was changed to 40 nm in Example 2.

Fig. 47A is a plan view showing the information recording medium once written in the embodiment 2, and Fig. 47B is a cross-sectional view showing the information recording medium in the second embodiment.

The composition of the information recording medium of the first embodiment has the composition that the recording layer 4 is disposed between the lower dielectric layer 3 and the upper dielectric layer 5, and writes an information record as compared with the embodiment 2. The media has excellent reliability. Similarly to the writing of the information recording medium of the embodiment 1, it is checked whether or not the information recording medium of the second embodiment can be recorded and reproduced based on the random data in the recording layer 4. As a result of this check, the result is that recording and reproduction can be performed similarly to the writing of the information recording medium of Embodiment 1.

In Embodiment 3, this motherboard for an optical information recording medium (disk) is produced. A plan view of the motherboard manufactured in Embodiment 3 is shown in Fig. 48A. As shown in Fig. 48A, the recording pit 11 is formed on the film 10. The rail spacing is 0.32 microns and the shortest pit size is 150 nm. The substrate used here is a quartz substrate.

If the quartz main substrate obtained in the embodiment 3 is used, a stamper for optical disk injection molding and an optical information recording medium can be produced.

Next, referring to Fig. 48B, a method of manufacturing the main substrate of Fig. 48A will be described.

Figure 48B is a cross-sectional view showing the main substrate. When this is a picture formed on the quartz substrate 14 When the film 10 of the film formation layer is irradiated with the laser beam 13 focused by the objective lens 12, the recording holes 11 (concave patterns (holes or recesses)) are formed.

The method of manufacturing the main substrate will now be described. First, a quartz substrate having high surface accuracy is prepared. Then, a splash device CFS-8EP-55 (from Shibaura Mechatronics Co.) was used to perform RF splashing to form ZnS, SiO ₂ , and Zn of the substrate (mixed inorganic material, molar ratio: 54:13:33) The pattern forms a layer. The thickness of this pattern forming layer is approximately 40 nm. This forms a layer as a pattern before forming a fine pattern.

Next, as shown in Fig. 48B, the blue laser light 13 (wavelength: 405 nm) is focused on the pattern using the objective lens 12 (lens NA: 0.85) of the laser light irradiation device LA330 (from Shibasoku Co.). Formed on the layer. This laser light is modulated by multiple pulses and subjected to laser light irradiation so that random data is recorded in this recording layer.

These holes like pits (recessed patterns) are formed in the laser irradiated portion of the pattern forming layer in accordance with this process. The formation of potholes can be confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The depth of these holes is approximately 40 nm. This corresponds to the thickness of the pattern forming layer formed by the mixed inorganic material. In the measurement using the elliptical VASE (from JA, Woollam, Japan), the patterning layer formed of the mixed inorganic material has an absorption coefficient k of about 1 x 10 ^-1 .

This quartz substrate, in which a pothole is formed in the pattern forming layer, can be used as a main substrate for a stamper for optical disk injection molding.

Next, Ni electroforming was carried out in accordance with the main substrate of Example 3, and a Ni stamper was actually produced. Then, a BD-ROM substrate was produced by injection molding or 2P transfer (photon-polymerization) using a Ni stamper.

In the above case, Ni electroforming is performed, and it is mounted in a reactive ion etching (RIE) apparatus, and Ni electroforming can be performed by performing etching by CF4 gas and performing shape reflection on the quartz substrate. A section of the quartz substrate 14 is shown in Fig. 49, wherein the recording pits 15 are formed in the quartz surface.

These recording pits 15 are formed in a pattern forming layer which is formed of ZnS, SiO ₂ , and Zn (this mixed inorganic material, material A, material B, and material C). When the RIE etching and hydrofluoric acid remove the pattern forming layer (etching SiO ₂ with hydrofluoric acid) and further removing the remaining using argon gas, the quartz substrate 14 of Fig. 49 can be formed.

A main substrate for an optical information recording medium is produced. A schematic view of the surface of the main substrate is shown in Fig. 48A. As shown in Fig. 48A, the recording pit 11 is formed on the film 10. The track pitch is 0.32 microns and the shortest hole size is 150 nm. This substrate material is quartz. The main substrate made of quartz source, the stamper used for the injection molding of the optical disk, can further be made into an optical information recording medium.

A method of manufacturing the main substrate of Fig. 48A will now be described with reference to Fig. 48B. Figure 48B is a cross-sectional view.

These recording holes 11 are formed by irradiating the thin film 10 (pattern forming layer) on the quartz substrate 14 with the laser beam 13 focused by the objective lens 12.

First, a quartz substrate having high surface accuracy is prepared. Then, a pattern forming layer formed by using a splatter CFS-8EP-55 (from Shibaura Mechatronics Co.) by ZnS, SiO ₂ , and AgInSbTe (mixed inorganic material, molar ratio: 54:13:33) was used. RF splashing.

A layer having a thickness of 40 nm was formed on the quartz substrate. This layer is used as a pattern forming layer. The composition ratio of AgInSbTe is 6:0.7:25.1:68.2 (Ag ₆ In _0.7 Sb _25.1 Te _68.2 ). For the sake of convenience, it will be referred to as AgInSbTe.

Next, as shown in Fig. 48B, the blue laser light 13 (wavelength: 405 nm) is focused by the objective lens 12 (lens NA: 0.85) of the laser beam irradiation apparatus, and applied to the pattern forming layer, and this The ray is modulated by multiple pulses so that random data is recorded.

These holes like pits (recessed patterns) are formed in the laser irradiated portion of the pattern forming layer of this process. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to examine the formation of potholes. The depth of these holes is approximately 40 nm. And equivalent to the thickness of the pattern forming layer. The patterning layer formed of the mixed inorganic material has an absorption coefficient k of about 1 x 10 ^-1 .

Therefore, the quartz substrate in which the pothole is formed can be used as the main substrate of the stamper and used for the optical disc injection molding. Nickel (Ni) electroforming is actually carried out in accordance with the main substrate of the present invention, and is formed into a nickel stamper. Then, using a nickel stamper, a read-only medium (ROM) is produced by injection molding or 2P transfer (photon-polymerization).

In this embodiment, AgInSbTe is used as the material C, and is a composite of (ZnS) added to the material A and (SiO ₂ ) of the material B. This AgInSbTe is a four-element-based inorganic material composite. This hole (pothole) may be formed in the pattern forming layer, and the material C may be used to form the main substrate. Therefore, if a material which can increase optical absorption capability (inorganic material of a metal, a semimetal, or a semiconductor) is used as the material C, and this laser light irradiation corresponding to the optical absorption ability in the mixed inorganic material is appropriately selected. Conditions can be made into the main substrate.

A main substrate for an optical non-reflective film (anti-reflection film) is produced. A schematic view of a main substrate for an optical non-reflective film is shown in Figs. 50A and 50B. Fig. 50A is a top view of the main substrate, in which the outline of the periodic structure including the circular pits 17 is schematically shown. Figure 50B is a cross-sectional view of the main substrate.

This period is about 300 nm, the cavity diameter is about 80 nm, and the film thickness is about 20 nm. This substrate is a quartz substrate, and a pattern forming layer 16 of a mixed inorganic material is formed.

The materials (mixed inorganic materials) formed in the periodic structure of the pattern forming layer 16 on the quartz substrate 18 are: ZnS, SiO ₂ , and Zn (68:17:15).

When compared with a quartz substrate in which the same thickness of the periodic structure is not formed, this is an increase in transmission of light having a wavelength in the range of 400-600 nm, and can be made into a main substrate on which an optical non-reflective film formed can be achieved. Almost 100% non-reflective. This is because the periodic structure of the microstructure is converted into a moth-eye structure that controls reflection and transmits incident light.

Although the main substrate itself can be used as an optical non-reflective film, many of the optical non-reflective films are remanufactured by Ni electroforming, and are suitable for mass production by using them as a main model. The optical non-reflective film is used in: polarized plates, such as rear projection screens and projector displays, solar cells, and the like.

The manufacturing method will now be described. First, a film 16 (pattern forming layer) of ZnS, SiO ₂ , and Zn (moire ratio: 68:17:15) is formed on the quartz substrate 18. After the film was formed, it was placed on an XY stage, and this film 16 (pattern forming layer) was irradiated with a blue laser light (wavelength: 405 nm) focused using an objective lens (NA: 0.85).

These periodic potholes are formed by irradiating with pulsed light (period: 300 nm, laser power: 11 mW) for a given period. After the wafer is formed in the main substrate, it is divided into several square millimeters by cutting and cleaned to remove impurities therefrom.

Fig. 51 is a cross-sectional view of the quartz substrate 18 to which etching is performed using a quartz substrate having a pattern forming layer in which a periodic pit is formed.

The pattern 19 is formed on the quartz substrate 18. The film of the mixed inorganic material formed in this pattern can be used as an optical non-reflective film. However, when the material of the substrate and the material of the film are different from each other, the effect as an optical non-reflective film is degraded, and peeling occurs at the next cutting process. To avoid this problem, the film of the mixed inorganic material is etched to the quartz substrate 18, and the pattern is reproduced by shifting the pits (pattern) to the quartz substrate.

The configuration of the pattern 19 (pothole) formed on the surface of the quartz substrate 18 is very close: a group using a structure of ZnS, SiO ₂ , and Zn (moire ratio: 68:17:15) as a mask (impedance) state.

In this case, the structures of ZnS, SiO ₂ , and Zn (moire ratio: 68:17:15) are sufficiently small for the etching rate of CF4, and can be made to have a large aspect ratio (vertical length greater than horizontal length). configuration.

52A and 52B show scanning electron micrographs of samples of an optical information recording medium in an embodiment of the present invention, in which a recording layer formed of a mixed inorganic material is irradiated with laser light. A mixed target of ZnS, SiO ₂ , and Ag (Mohr ratio: 72:18:10) was used to perform sputtering so that a film 20 having a thickness of 40 nm was formed on the polycarbonate substrate, and each sample was irradiated with laser light. (wavelength: 405 nm, NA: 0.85) irradiation.

In the case of Fig. 52A, the laser power is 8 mW. An expanded portion 21 is produced in the film 20. In the case of Fig. 52B, the laser power is 9 mW. A hole 22 having a diameter of approximately 80 nm is produced. If a material that can form a mixed target is used, any of a metal, a semimetal, and a semiconductor can be used to make a mixed target.

ZnO has a larger transmission to blue laser light than other elements, and can be used as material C instead of Ag. In particular, when ZnTe-ZnO is used as the material C, and a mixed material of ZnS, SiO ₂ , ZnTe, and ZnO (Mohr ratio: 64:18:10:8) is prepared and irradiated in the same manner as a laser It is possible to form a hole having a sharp terminal.

It has been confirmed that when any one of InSb, AgInSbTe, and GeSbTe is used as the material C instead of Ag and laser light irradiation is performed, such pits can be formed.

The information recording medium of the present invention can be applied to write once recording media, including: CD-R, DVD-R, high-definition digital multi-function disc (HD DVD), and Blu-ray disc (Blu-ray Disc-) Recordable). The information recording medium of the present invention can also be applied to a multi-layered disc in which two or more recording layers are formed on a single optical recording medium in order to increase the storage capacity. this invention The information recording medium can be applied to a single layer disc in which a track having a narrow track pitch is formed in the recording layer to increase the storage capacity.

The main substrate of the present invention is suitably used as a main substrate for a read-only medium (ROM: read only memory) or for manufacturing ultra-fine printing in an information recording medium at low cost.

The invention is not limited to the embodiments described above, and variations and modifications may be made without departing from the scope of the invention.

The present invention is based on and claims the benefit of the following patent application: Japanese Patent Application No. 2007-071485, filed on March 19, 2007, and Japanese Patent Application, filed on March 26, 2007 Japanese Patent Application No. 2007-120218, filed on Apr. 27, 2007, and Japanese Patent Application No. 2007-276730, filed on Oct. 24, 2007, the content of the above patent application The entire incorporation is incorporated by reference.

1‧‧‧Substrate

2‧‧‧reflective layer

3‧‧‧ Lower dielectric layer

4‧‧‧recording layer

5‧‧‧Upper dielectric layer

6‧‧‧Protective layer

7‧‧‧ record marks

8‧‧‧Laser illumination

9‧‧‧ hole

10‧‧‧film

11‧‧‧ Recording potholes

12‧‧‧ Objective lens

13‧‧‧Laser light

14‧‧‧Quartz substrate

15‧‧‧ Recording potholes

16‧‧‧pattern layer

17‧‧‧round pothole

18‧‧‧Quartz substrate

19‧‧‧ pattern

20‧‧‧ film

21‧‧‧Expansion

22‧‧‧ holes

100A‧‧‧Information Recording Media

100B‧‧‧Information Recording Media

100C‧‧‧Optical non-reflective film

100D‧‧‧Optical waveguide

100E‧‧‧ optical filter

101‧‧‧矽 substrate

102‧‧‧ dielectric layer

103‧‧‧Light absorbing layer

104‧‧‧Microstructure

104a‧‧‧Cylindrical structure

104b‧‧‧hemispherical structure

105‧‧‧Area

106‧‧‧Mixed material layer

107‧‧‧Laser light

108‧‧‧ Objective lens

109‧‧‧ Hydrofluoric acid

110‧‧‧ polycarbonate substrate

111‧‧‧ZnS layer

112‧‧‧Quartz substrate

200A‧‧‧Main substrate

200B‧‧‧Optical non-reflective film

200C‧‧‧Optical non-reflective film

200D‧‧‧Information Recording Media

200E‧‧‧Optical waveguide

200F‧‧‧ optical filter

200G‧‧‧ optical filter

201‧‧‧Quartz substrate

201a‧‧‧ pattern

201b‧‧‧ cylindrical pattern

201c‧‧‧ pattern

202‧‧‧Mixed material layer

203‧‧‧ objective lens

204‧‧‧Blue laser light

205‧‧‧ Hydrofluoric acid

206, 207, 208, 209‧‧‧ microstructure

210‧‧‧ polycarbonate substrate

211‧‧‧Microstructure

212‧‧‧矽 substrate

213, 214‧‧‧ microstructure

300‧‧‧Polarized polarizer components

301‧‧‧ polycarbonate substrate

302‧‧‧ZnS layer

303‧‧‧Linear microstructure

304‧‧‧Mixed material layer

305‧‧‧ Objective lens

306‧‧‧Laser light

307‧‧‧ Hydrofluoric acid

308‧‧‧Carbon

310‧‧‧Light

311‧‧‧P polarized light

312‧‧‧S polarized light

313‧‧‧transmitter

321, 322, 323‧‧‧ Receiver

331‧‧‧Optical component circuit

332‧‧‧Optical Decomposer Circuit

400‧‧‧ optical filter

401‧‧‧ polycarbonate substrate

402‧‧‧ZnS layer

403‧‧‧micro-like structure

404‧‧‧Mixed material layer

405‧‧‧ Objective lens

406‧‧‧Blue laser light

407‧‧‧ Hydrofluoric acid

410‧‧‧Special wavelength light

411‧‧‧P polarized light

412‧‧‧S polarized light

500A‧‧Inorganic electroluminescence (EL) components

500B‧‧‧Inorganic electroluminescent (EL) components

501‧‧‧ cathode

502‧‧‧Lighting layer

503‧‧‧Anode plate

600‧‧‧Dye-sensitive solar cells

601‧‧‧ glass substrate

602‧‧‧Microstructure

603‧‧‧ cathode

604‧‧‧ glass substrate

605‧‧‧Anode plate

606‧‧‧Photoelectric converter

700‧‧‧Non-spherical optical lens

701‧‧‧Quartz substrate

1A and 1B are diagrams showing the components of the information recording medium of Embodiment 1; FIGS. 2A, 2B, 2C, and 2D are cross sections for explaining the method of manufacturing the information recording medium of Embodiment 1; FIGS. 3A and 3B The figure shows the composition of the information recording medium of Example 2; the 4A and 4B shows the scanning electron micrograph of the microstructure (4.5 mW pulse light output); the 5A and 5B shows the scanning electron micrograph of the microstructure (5.0 mW) Pulsed light output); Figures 6A and 6B show scanning electron micrographs of microstructures (5.5mW pulsed light output); Figures 7A and 7B show scanning electron micrographs of microstructures (6.0mW pulsed light output); 8A and Figure 8B shows a scanning electron micrograph of the microstructure (6.4 mW pulsed light output); Figures 9A and 9B show a scanning electron micrograph of the microstructure (7.0 mW pulsed light output); Figure 10 is used to explain the pulsed light of the microstructure The relationship between the output and the maximum diameter; the 11A, 11B, 11C, and 11D are cross-sectional views of the microstructures at each of Phases I, II, III, and IV; and FIGS. 12A and 12B show Example 4. Optics Constituent of the reflective film; of FIG. 13A and 13B show the constituent of an optical waveguide of the embodiment 5; 14A and 14B show the components of the optical filter of Embodiment 6; FIG. 15 shows the components of the motherboard of Embodiment 7; and FIGS. 16A, 16B, 16C, 16D, 16E, and 16F are cross-sectional views, A manufacturing method for explaining a motherboard of Fig. 15; Fig. 17 is a cross-sectional view showing another example of the microstructure of the embodiment 7; and Figs. 18A and 18B are diagrams showing the composition of the optical non-reflecting film of the embodiment 8. 19A and 19B show the composition of the optical non-reflective film of Example 9, 20 shows a cross-sectional view of another example of the optical non-reflective film of Example 9, and 21 shows the information recording medium of Example 10. Compositions; 22A and 22B show the composition of the optical waveguide of Embodiment 11; FIG. 23 shows a cross-sectional view of the composition of the optical filter of Embodiment 12; and FIG. 24 shows the optical filter of Embodiment 12. A cross-sectional view of another example; 25A, 25B, 25C, and 25D shows a scanning electron micrograph of the microstructure of Example 13; and Figure 26 illustrates the relationship between the pulsed light output of the microstructure and the outer or inner diameter Relationship; 27A 27B shows a scanning electron micrograph of another example of the microstructure of Example 13, and FIG. 28 shows a scanning electron micrograph of another example of the microstructure of Example 13; FIGS. 29A, 29B, 29C, and 29D show examples. Scanning electron micrograph of microstructure of 15; FIGS. 30A and 30B show scanning electron micrographs of another example of the microstructure of Example 15; FIG. 31 is for explaining wavelength division multiplexing communication; and FIG. 32 is a perspective view, It shows the composition of the polarization separation element of Embodiment 17; FIGS. 33A, 33B, 33C, and 33D are cross-sectional views, a manufacturing method for explaining the polarization separation element of Embodiment 17, and 34A and 34B. The figure shows a scanning electron micrograph (3.5 mW pulsed light output) of the polarization separation element of Example 17, and FIG. 35 shows the dependence of the transmission wavelength of the polarization separation element of Example 17 on S-polarized light; Figures 36A and 36B show scanning electron micrographs of the polarized separation element of Example 17. (2.5 mW pulsed light output); Fig. 37 shows the dependence of the transmission wavelength of the polarization separation element of Example 17 on S-polarized light; and Fig. 38 is a perspective view showing the optical filter of Example 18. The components; the 39A, 39B, 39C, and 39D are cross-sectional views for explaining the manufacturing method of the optical filter of the embodiment 18; and the 40A and 40B are drawings showing the scanning electron microscope of the optical filter of the embodiment 18. Photograph; FIG. 41 shows the dependence of the transmission wavelength of the optical filter of Example 18 on S-polarized light; and FIGS. 42A and 42B are cross-sectional views showing the composition of the inorganic EL element of Example 19; 43 is a cross-sectional view showing the composition of the dye-sensitive solar cell of Example 20; FIGS. 44A and 44B are diagrams showing the composition of the non-spherical optical lens of Example 21; and FIGS. 45A and 45B are views showing the embodiment of the present invention. The components of the optical information recording medium; FIGS. 46A and 46B show scanning electron micrographs of samples of the optical information recording medium in which the recording layer is illuminated by laser light; FIGS. 47A and 47B show the present invention. The components of the optical information recording medium in the example; the 48A and 48B drawings show the composition of the main substrate in the embodiment of the present invention; the 49th shows the composition of the quartz substrate on which the recording pit is formed; the 50A and 50B shows The composition of the main substrate of the optical non-reflective film in the embodiment of the present invention; FIG. 51 shows the composition of the quartz substrate on which the pattern is formed; and FIGS. 52A and 52B show the sample of the optical information recording medium in the embodiment of the present invention. A scanning electron microscope photograph in which the recording layer formed of the mixed inorganic material is irradiated with laser light.

100A‧‧‧Information Recording Media

101‧‧‧矽 substrate

102‧‧‧ dielectric layer

103‧‧‧Light absorbing layer

104‧‧‧Microstructure

105‧‧‧Area

Claims (14)

A microstructure comprising: a sulfur composite and a niobium oxide, wherein the sulfur composite is selected from the group consisting of ZnS, FeS, GeS ₂ , CaS, BaS, CdS, K ₂ S, Ag ₂ S, GeS, CoS, Bi ₂ a group of S ₃ , PbS, Na ₂ S, Cu ₂ S, CuS, Al ₂ S ₃ , Sb ₂ S ₃ , SmS, PbS, Na ₂ S, LiS, SiS, and SiS ₂ SiO and SiO _{2 are included} , and the percentage of the niobium oxide content in the microstructure is between 10 and 30 mole %. The microstructure according to claim 1, wherein the microstructure is any one of the following configurations: a convex configuration having a curved surface; and a configuration wherein a convex structure having a curved surface Formed on a cylindrical structure; and a cylindrical configuration. The microstructure according to claim 1, wherein the microstructure is any one of the following configurations: a convex configuration having a curved surface; and a configuration wherein a convex structure having a curved surface Formed on the cylindrical structure; and a configuration in which a cylindrical cross section is continuously formed. The microstructure according to claim 1, further comprising: a material for improving optical absorption capability of light having a predetermined wavelength, the material comprising at least one of the following: aluminum (Al), silver (Ag), Gold (Au), copper (Cu), zinc (Zn), platinum (Pt), antimony (Sb), tellurium (Te), germanium (Ge), germanium (Si), germanium (Bi), manganese (Mn), Tungsten (W), niobium (Nb), cobalt (Co), strontium (Sr), iron (Fe), indium (In), tin (Sn), nickel (Ni), molybdenum (Mo), magnesium (Mg), And calcium (Ca). The microstructure according to claim 4, further comprising: an oxide material for improving the optical absorption capability of light having a predetermined wavelength. For example, the microstructure described in claim 1 of the patent scope includes: A material for improving optical absorption capability of light having a predetermined wavelength, the material comprising: at least one of zinc telluride (ZnTe), zinc selenide (ZnSe), and manganese sulfide (MnS). The microstructure according to claim 1, further comprising: a material for improving optical absorption capability of light having a predetermined wavelength, the material comprising: a fluorescent material. The microstructure according to claim 7, wherein the fluorescent material is cadmium selenide (CdSe) or cadmium telluride (CdTe). A method of fabricating a microstructure, comprising the steps of: forming a layer comprising a sulfide and a cerium oxide on a substrate; irradiating the layer comprising the sulfur complex and the cerium oxide with laser light; and irradiating with the laser light The layer is etched to form a microstructure, wherein the sulfur composite comprises a first sulfur composite for increasing the optical absorption capacity of light having a predetermined wavelength, or the layer comprising the sulfur composite and the tantalum oxide further comprises: A material for improving optical absorption capacity. A writing information recording medium comprising: a substrate; and a recording layer formed of a mixed inorganic material and deposited on the substrate, wherein the mixed inorganic material comprises a sulfur composite and a cerium oxide. The information recording medium is written as described in claim 10, wherein the mixed inorganic material further comprises an inorganic material different from the sulfur composite and the niobium oxide, and is selected from the group consisting of metal, semimetal, and semiconductor, and Wherein, the recording layer has an optical absorption capability for light of a predetermined wavelength is greater than: an optical absorption capability of the recording layer of the same thickness not containing the inorganic material. The information recording medium is written as described in claim 10, and further includes: a dielectric layer and a reflective layer deposited on the substrate. The information recording medium is written as described in claim 11, wherein the inorganic material comprises an element constituting the sulfur composite and the cerium oxide. The information recording medium is written as described in claim 10, wherein the inorganic material comprises at least one element selected from the group consisting of aluminum (Al), silver (Ag), gold (Au), copper (Cu), Zinc (Zn), platinum (Pt), antimony (Sb), antimony (Te), germanium (Ge), antimony (Si), antimony (Bi), manganese (Mn), tungsten (W), antimony (Nb), Cobalt (Co), strontium (Sr), iron (Fe), indium (In), tin (Sn), nickel (Ni), molybdenum (Mo), magnesium (Mg), calcium (Ca), lead (Pb), And 钡 (Ba).