TWI384263B - Color filter by copper and silver film and method for making same - Google Patents
Color filter by copper and silver film and method for making same Download PDFInfo
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- TWI384263B TWI384263B TW98113045A TW98113045A TWI384263B TW I384263 B TWI384263 B TW I384263B TW 98113045 A TW98113045 A TW 98113045A TW 98113045 A TW98113045 A TW 98113045A TW I384263 B TWI384263 B TW I384263B
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Description
本發明有關於一種銅銀薄膜濾色器(color filter)及其製法。The invention relates to a copper silver thin film color filter and a preparation method thereof.
濾色器是彩色影像處理所需要的元件,例如在影像感測器中即需要使用之。現有技術係以類光阻性的材料塗層製作濾色器。在美國專利第2006/0180886號申請公開案中,揭露了一種根據Fabry-Perot諧振方式,以銀薄膜製成之濾色器。所謂Fabry-Perot諧振係如圖1所示,在兩層良好反射體之間,入射光將不斷反射,僅有特定的諧振頻率才能穿透,因此具有濾波效果。然而,銀的沉積製程目前尚未能整合在一般半導體晶圓製程中,美國專利第2006/0180886號案所述的銀薄膜結構,在實際製作上尚難實現。Color filters are components required for color image processing, such as those used in image sensors. The prior art produces color filters from a photoresist-like material coating. In the application publication of U.S. Patent No. 2006/0180886, a color filter made of a silver film according to the Fabry-Perot resonance mode is disclosed. The so-called Fabry-Perot resonance system is shown in Fig. 1. Between the two layers of good reflectors, the incident light will continuously reflect, and only a specific resonant frequency can penetrate, thus having a filtering effect. However, the silver deposition process has not yet been integrated into the general semiconductor wafer process. The silver film structure described in the US Patent No. 2006/0180886 is still difficult to implement in actual production.
本發明提供一種新穎的濾色器結構與製法,使得Fabry-Perot諧振濾色器得以一般半導體晶圓製程來製作。The present invention provides a novel color filter structure and method for making a Fabry-Perot resonant color filter fabricated in a general semiconductor wafer process.
本發明之第一目的在提供一種銅銀薄膜濾色器。A first object of the present invention is to provide a copper silver thin film color filter.
本發明之第二目的在提供上述銅銀薄膜濾色器的製法。A second object of the present invention is to provide a method for producing the above-described copper-silver film color filter.
為達上述之目的,就本發明的其中一個觀點而言,提供了一種銅銀薄膜濾色器,包含:下方銅層;沉積在下方銅層上的下方銀層;沉積在下方銀層上的介質;沉積在介質上的上方銅層;以及沉積在上方銅層上的上方銀層。In order to achieve the above object, in one aspect of the present invention, a copper-silver film color filter comprising: a lower copper layer; a lower silver layer deposited on the lower copper layer; and a lower silver layer deposited thereon is provided. a medium; an upper copper layer deposited on the medium; and an upper silver layer deposited on the upper copper layer.
就另一觀點言,本發明提供了一種銅銀薄膜濾色器之製法,包含:提供下方銅層,作為種子層;以電鍍方式在下方銅層上沉積下方銀層;在下方銀層上沉積介質;在介質上沉積上方銅層,作為種子層;以及以電鍍方式在上方銅層上沉積上方銀層。銅種子層例如可用PVD蒸鍍方式形成。In another aspect, the present invention provides a method for preparing a copper-silver film color filter comprising: providing a lower copper layer as a seed layer; depositing a lower silver layer on the lower copper layer by electroplating; depositing on the lower silver layer a medium; depositing an upper copper layer on the medium as a seed layer; and depositing an upper silver layer on the upper copper layer by electroplating. The copper seed layer can be formed, for example, by PVD evaporation.
以上銅銀薄膜濾色器與製法中,該介質材料例如可為氮化矽、氮氧化矽、或碳化矽。In the above copper-silver film color filter and method, the dielectric material may be, for example, tantalum nitride, hafnium oxynitride, or tantalum carbide.
以上銅銀薄膜濾色器與製法中,銅層之較佳厚度範圍為:0nm<銅層厚度。In the above copper-silver film color filter and method, the preferred thickness range of the copper layer is: 0 nm < copper layer thickness .
以上銅銀薄膜濾色器與製法中,銀層之厚度宜低於30nm。In the above copper-silver film color filter and the preparation method, the thickness of the silver layer is preferably less than 30 nm.
底下藉由具體實施例詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The purpose, technical content, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments.
本發明中的圖式均屬示意,主要意在表示製程步驟以及各層之間之上下次序關係,至於形狀、厚度與寬度則並未依照比例繪製。The drawings in the present invention are schematic and are mainly intended to represent the process steps and the relationship between the layers, and the shapes, thicknesses, and widths are not drawn to scale.
圖2說明本發明的第一實施例。本發明的特點之一在於先提供銅層11,再於銅層11上沉積銀層12。銅層11可為極薄的一層種子層,甚至不必非常密實。形成銅種子層的方式例如為PVD蒸鍍,此在現行以銅為內連線的半導體製程中為已為成熟的標準技術。形成銅種子層之後,可使用電鍍技術在銅層11上沉積銀層12。銀層12的沉積可如圖3所示,以銀棒21為陽極,以晶圓22為陰極,在合適的電解液(例如硝酸水溶液)中,即可進行電鍍。Figure 2 illustrates a first embodiment of the present invention. One of the features of the present invention is that a copper layer 11 is provided first, and a silver layer 12 is deposited on the copper layer 11. The copper layer 11 can be an extremely thin layer of seed, even without being very dense. The method of forming the copper seed layer is, for example, PVD evaporation, which is a mature standard technology in the current semiconductor process in which copper is an interconnect. After the copper seed layer is formed, a silver layer 12 can be deposited on the copper layer 11 using electroplating techniques. The deposition of the silver layer 12 can be carried out by electroplating in a suitable electrolyte (for example, an aqueous solution of nitric acid) using the silver rod 21 as an anode and the wafer 22 as a cathode as shown in FIG.
下方銀層12和上方銅層11之間的介質13,可配合半導體製程來選擇其材料,其宜為對銅具有障壁(barrier)功能的材料,例如氮化矽、氮氧化矽、或碳化矽。這些材料的沉積製程目前皆為成熟的技術,例如為CVD化學氣相沉積。The medium 13 between the lower silver layer 12 and the upper copper layer 11 can be selected in accordance with a semiconductor process, and is preferably a material having a barrier function to copper, such as tantalum nitride, hafnium oxynitride, or tantalum carbide. . The deposition processes for these materials are currently mature technologies such as CVD chemical vapor deposition.
由「下方銅層11+下方銀層12+介質13+上方銅層11+上方銀層12」所構成的Fabry-Perot濾色器,可以單獨製作成元件,或製作在半導體或微機電系統晶片中任何合適的位置。當其製作於晶片中時,如圖所示,可配合製程而製作在上下兩結構層14之間,此結構層14例如為氮化矽、氮氧化矽、或碳化矽。The Fabry-Perot color filter consisting of "the lower copper layer 11 + the lower silver layer 12 + the medium 13 + the upper copper layer 11 + the upper silver layer 12 " can be fabricated separately into components or fabricated in a semiconductor or MEMS wafer. position. When it is fabricated in a wafer, as shown, it can be fabricated between the upper and lower structural layers 14 in accordance with a process, such as tantalum nitride, hafnium oxynitride, or tantalum carbide.
圖4顯示「銅層+銀層」所構成的複合銅銀薄膜中,銅層厚度對光穿透率(transmittance)的影響。較佳之銀層厚度宜低於30奈米(nm),本圖顯示當銀層厚度固定為28nm,而銅層厚度分別為0nm,10nm,20nm時,整體複合銅銀薄膜的光穿透率。由圖中明顯可看出,銅層厚度越低越佳,但如前述,純銀層無法整合於目前的半導體晶圓製程中,故銅層的厚度不宜為零,其範圍宜為0nm<銅層厚度。Figure 4 shows the effect of the thickness of the copper layer on the transmittance of the composite copper-silver film composed of "copper layer + silver layer". Preferably, the thickness of the silver layer is preferably less than 30 nanometers (nm). This figure shows the light transmittance of the overall composite copper-silver film when the thickness of the silver layer is fixed to 28 nm and the thickness of the copper layer is 0 nm, 10 nm, and 20 nm, respectively. It can be clearly seen from the figure that the lower the thickness of the copper layer, the better, but as mentioned above, the pure silver layer cannot be integrated into the current semiconductor wafer process, so the thickness of the copper layer is not suitable to be zero, and the range thereof is preferably 0 nm<copper layer thickness .
圖5顯示「銅層+銀層」所構成的複合銅銀薄膜,將其總厚度固定為28nm,而銅層厚度分別為0nm,5nm,10nm,15nm,20nm時,整體複合銅銀薄膜的光穿透率。由圖中同樣可看出,銅層厚度越低越佳。Figure 5 shows a composite copper-silver film composed of "copper layer + silver layer", the total thickness of which is fixed to 28 nm, and the thickness of the copper layer is 0 nm, 5 nm, 10 nm, 15 nm, and 20 nm, respectively. Penetration rate. As can be seen from the figure, the lower the thickness of the copper layer, the better.
以上已針對較佳實施例來說明本發明,唯以上所述者,僅係為使熟悉本技術者易於了解本發明的內容而已,並非用來限定本發明之權利範圍。對於熟悉本技術者,當可在本發明精神內,立即思及各種等效變化。舉例而言,所示各結構層之間,可添加其他材料而不影響本案的基本精神,例如在介質13亦可為兩種材料以上的複合層。故凡依本發明之概念與精神所為之均等變化或修飾,均應包括於本發明之申請專利範圍內。The present invention has been described with reference to the preferred embodiments thereof, and the present invention is not intended to limit the scope of the present invention. For those skilled in the art, various equivalent changes can be immediately considered within the spirit of the invention. For example, other materials may be added between the structural layers shown without affecting the basic spirit of the present invention. For example, the medium 13 may also be a composite layer of two or more materials. Equivalent changes or modifications of the concept and spirit of the invention are intended to be included within the scope of the invention.
11...銅層11. . . Copper layer
12...銀層12. . . Silver layer
13...介質13. . . medium
14...結構層14. . . Structural layer
21...銀棒twenty one. . . Silver rod
22...晶圓twenty two. . . Wafer
圖1示出先前技術之剖面結構。Figure 1 shows a cross-sectional structure of the prior art.
圖2示出本發明的實施例。Figure 2 shows an embodiment of the invention.
圖3顯示銀的沉積方式。Figure 3 shows the deposition of silver.
圖4、5顯示複合銅銀薄膜的光穿透率。Figures 4 and 5 show the light transmittance of a composite copper-silver film.
11...銅層11. . . Copper layer
12...銀層12. . . Silver layer
13...介質13. . . medium
14...結構層14. . . Structural layer
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TW200703424A (en) * | 2005-07-06 | 2007-01-16 | Capella Microsystems Corp | Ambient light filter structure |
TW200816374A (en) * | 2006-09-29 | 2008-04-01 | Megica Corp | Circuit component |
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TW200703424A (en) * | 2005-07-06 | 2007-01-16 | Capella Microsystems Corp | Ambient light filter structure |
TW200816374A (en) * | 2006-09-29 | 2008-04-01 | Megica Corp | Circuit component |
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