TWI378553B - The coaxial selectable multiwavelength photodiode structures and its image sensing devices - Google Patents

Description

1378553 VII. Designated representative map: (1) The representative representative of the case is: (11). (2) Simple description of the symbol of the representative figure: 1101 Coaxial color light-detecting diode 1102 Axis electrode connecting wire 1103 Vertical step-scanning multiplexer 1104 Timing generator 1105 Horizontal step-scan multiplexing processing 1106 analog signal Processor 1107 analog conversion digital conversion circuit 1108 digital signal processor 1109 interface end

8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: IX. Description of the invention: [Technical field of invention] The present invention relates to a coaxial optional multi-wavelength inspection using wavelengths of different injection depths Light diode structure and color image sensing device therefor 4 1378553 [Prior Art]

SOLID-STATE IMAGE SENSOR, such as charge coupled device image sensor CCD (CHARGE COUPLED DEVICE IMAGE SENSOR 'CCD originally refers to the function of the photodiode excited charge transfer function; but has been used to CCD as synthesizing sensor, CID (; CHARGE INJECTI 〇 N DEVICE), CPD (CHARGE PRIMING DEVICE) and CMOS image sensor

Etc., the color filter (COLOR FILTER) of Figure 1 is arranged with three blocks of red R, green G and blue B, and there are three light/electric diodes which are excited by light to generate stored charges ( The composition of PHOTODIODE) to represent a PICTURE ELEMENT. That is, the light color of the original pixel position is to be split into three position signals, for example, as shown in Fig. 1; therefore, the linear resolution is reduced to one third of the original pixel. Although there are US patents such as US 4, 677, 289 N0ZAKI ', etc., "COLOR SENSOR" and US 5, 965, 875, MERRILL φ, "C0L0R SEPARATION IN AN ACTIVE PIXEL CELL IMAGING ARRAY USING A TRIPLE- WELL STRUCTURE" is improved in two ways. The RGB decomposition component of the pixel region is represented by removing the color filter and the light film and overlapping the same position region with multiple colors (such as RGB), and respectively expressing the current or voltage output of the specified wavelength of each layer, thereby improving the resolution. degree. These improvements use semiconductor materials to achieve different objectives for different wavelengths of light waves, as shown in Figure 2. Taking the bismuth material in the figure as an example, it can be seen that the absorption coefficient of wavelength 〇·4/zm is the largest, and the absorption coefficient is gradually decreased as the wavelength of visible light increases. The larger the absorption coefficient is, the more the surface light is absorbed at 5 ^78553 t. It is said that it is a photocurrent that is turned over by an electronic pair. Continued to convert to the position where each wave is injected into the _, which can be mixed. The foot knows that photons of various wavelengths can enter the depth relationship of various materials. For example, the wavelength of blue light can penetrate deep into the surface of Shixia, but it cannot be absorbed by materials such as GaAs, germanium and InGaAs, because the blue light photon energy ratio is lower than that of materials such as 锗, 锗 and MaAs (10) ND GAP). . Red light 65. 65_ wavelength photons can go deep into the depth of about 5 in Shi Xizhong; but only shoot GaAs material about 〇. 6_ depth. Using the characteristics of different wavelengths of photons that can be injected into the depth capability, we can make a photodetector that can detect long light output. 3A shows a cross-sectional view of an embodiment of US Pat. No. 4,677,289, and FIG. 3B shows a circuit diagram of its circuit. 'By FIG. 3B, it can be seen that after the multi-layer overlap, in order to supply the inverse color grinding of the color layers to make the empty regions in the respective color layers. (DEPLETION REGION) generates enough electric field to separate the stimulated electrons and output the identifiable m-frequency supply high light (compared to the supply voltage of the single-layer photodetector diode). . The more the number of layers, the higher the voltage, the greater the attenuation of light in each layer. Therefore, it is very disadvantageous for hand-held or battery-powered camera equipment, and the power consumption and insulation of the device have many unfavorable results. Figure 4 is a representative view of US 5,965,875, and Figure 5 is a top view of the embodiment thereof. It can be seen from the cross-sectional view and the top view that the three-color layer overlaps for the purpose of improving the resolution. The three-circle square ring around the entrance of the main photodiode of the pixel, the electrode area of the current taken out occupies a large proportion (about one-half) of the area of the pixel, which greatly reduces the original purpose of improving the resolution. In the conventional semiconductor illuminator, organic semiconductor illuminator and other manufacturing technologies, 6 1378553 are all stacked on a flat substrate by layer-by-layer deposition, epitaxy, evaporation, diffusion or printing. The material is powered by the bottommost electrode and the uppermost electrode to achieve the purpose of detecting the photocurrent of the intermediate light detecting layer. The semiconductor photodetector diodes are made of P-N JUNCTION PHOTODIODE, PIN photodiode and AVALANCHE PHOTODIODE. The PN photodiode system combines a p-type semiconductor and an N-type semiconductor into a p_N junction (p_N JUNCTION) 'that is, a p-type semiconductor is laid on the N-type semiconductor, or a layer N is laid on the p-type semiconductor. The semiconductor is a pn photodiode, as shown in Figure 6A. After the PN junction, the impurity incorporated in the p-type contributes to the electric field (7) IONIZATION> and the electric field formed by the impurity doped in the N-type, which is formed by the release of electrons, as shown in Fig. 6A. Shown on the right side. When the reverse bias voltage vb is applied to the pn junction diode, the void region (10) PLET leg REGI0N) is further enlarged, and the electric field is also enhanced. At this time, if a photon having an energy larger than the semiconductor energy gap (BAND GAP) Eg is incident from above, the photon is absorbed by the semiconductor at an appropriate depth to generate an electron-hole pair. If the absorbed location is outside the electric field, there is no electric field; the electrons and holes will move up and down in the diffusion (DIFFUSI〇N) mode. The resulting photocurrent (PHOTO CURRENT) is called the diffusion current (DIFFUSION CURRENT). These regions are called diffusion regions (diffusi〇n REGION). If the absorbed location is in the electric field, there is an electric field; the electrons and holes will move up and down in a push or drift (DRIFT) manner. The photocurrent that produces upward flow is called the push current or drift current (driftqjrreNT), which is called the push region (DRIFT REGION). Since a pair of electrons and holes are generated for each photon absorption, the output photocurrent of the photodetector is proportional to the optical power of the photodetector. That is, to obtain a higher current, the higher the number of effective photons that must enter, the larger the opening. When an electric field E is applied, the excited electrons will receive a force from the electric field and will accelerate in the opposite direction of the electric field between each collision. The velocity caused by the action of electrons by the electric field is called DRIFT VEL〇CITY Vn, and the net displacement of the electron is opposite to the direction of the applied electric field. The electron pushing speed is proportional to the applied electric field'. The proportional factor is called ELECTRON MOBILITY //n= -Vn / E (1). In the same case, the hole pushing speed Vp and the hole moving rate are also generated for the hole. /Zp :

Vp / E (2) The hole push direction is the same as the electric field direction. Due to the electric field force, the electron and hole driving speed is much faster than the electron and hole diffusion speed; therefore, the current generated by the diffusion speed of the electron and the hole will hinder the detection reaction speed, because the diffusion current will be later than the current. It takes some time for the detector to flow out of the diode. In order to increase the reaction speed, it is often used to narrow the expansion area and expand the regional method, such as increasing the applied bias voltage or between the p-type semiconductor and the germanium-type semiconductor. The refreshing layer does not have any human donor (10) or acceptor (ACCEPT0R). The intrinsic semiconductor (INTRINSIC SEMICONDUCTOR) becomes a PIN light-detecting diode, as shown in Fig. 6B. So ρ-Ι_Ν three-layer structure, empty 8 1378553

The region also appears near the junction faces of the P-type semiconductor and the N-type semiconductor. Since the i-type semiconductor itself has a high resistance effect, the electric field at the junction faces is expanded over the entire I-type semiconductor, so that the I-type semiconductor is all in a high electric field distribution state, as shown on the right side of Fig. 6B. It can be seen that the electric field intensity distribution generated by the electric power of the ubiquitous region at both ends makes the push region have expanded to occupy almost the entire photodetector diode. Since most of the incident photons are absorbed at a suitable depth in the I-type semiconductor, that is, most of the photocurrent is formed by the push current, so compared with the pN photodiode; the pIN photodetector can be higher. Reaction rate (RESPONSE SPEED) and higher response efficiency (RESPONSIVITY). However, since the length of the sandwiched I layer is too long; the electrons and holes generated by the photon are absorbed, and it takes a long time to output the photocurrent, thereby reducing the reaction speed or reaction time (RESp〇NSETIME) of the photodetector. Therefore, when selecting the characteristics of the appropriate wavelength detection output, the shirt image sensing protocol can determine the most appropriate combination between the efficiency, the reaction speed, and the depth of the selected depth. The thickness of the I layer Li, the thickness of the upper diffusion region (i.e., the p-side electron expansion length) Lp, and the thickness of the lower diffusion region (i.e., the diffusion length of the n-side hole) Ln. It can be seen from the equation of (3) ideal diode: (3) (4) (5) (6) (7) J = Jp(xn) + Jn(-xP) = Js (e qV/kT - 1)

Js = ((qDp X pn.) / Lp) + ((qDn x npo) / Ln)

Dp = //PkT / q

Dn = kT / q 9 1378553 J is the sum of the current through the entire component 'that is the net hole current of the width of the η side of the Jp χ, and the net electron current of the width of the ρ side of the Jn. Current density, k is the Boltzmann constant (BOLTZMANN CONSTANT), Τ is the absolute temperature, Q is the basic charge, and Dp and Dn are the EDF TE RELATION and the electron diffusion coefficient and electron diffusion coefficient. Pn. is the N-side hole concentration in the depletion region under thermal equilibrium, Προ is the electron concentration in the P-side depletion region under thermal equilibrium. It is known from the combination of equations (4) and (5) to increase the electric field voltage and reduce the electron and hole diffusion lengths Lp and Ln. It is advantageous to promote the generation of photocurrent and increase the reaction speed. In the conventional light-detecting diode, the photo-detection method of the incident light wave is mostly carried out from the surface of the p-type semiconductor or from the surface of the N-type semiconductor; a few are cut-off semiconductors. That is, the side-shot type photo-detection mode enters. Most of the blue-band photons entering the wider-band saturation from the surface of the P-type semiconductor have a relatively high absorption coefficient, and it is difficult to push the depth of the region if the p-semiconductor layer is not extremely thin. It is a photocurrent with high reaction speed and high efficiency; most of them become a small number of diffused slow currents in the upper diffusion region, which is not conducive to the light detection output. This kind of conventional high-precision deposition of epitaxial light-detecting structure cannot eliminate slow The shortcoming of the fast diffusion region is not conducive to the short-wavelength detection of high absorption coefficient, such as the photoelectric conversion of the short-wavelength portion of the visible spectrum required by the image sensor. The image sensing and light by the conventional technique The communication uses the most front-illuminated light detection mode, and the upper surface electrode is ring-shaped, as shown in Fig. 7. When the surface of the surface ring electrode 703 and the bottom plane electrode 708 are opposite to each other, the semiconductors of the middle layer are reverse biased. Power supply, due to the electron density of the inner end face of the annular electrode in the middle of the upper surface

The higher, and the electric field is distributed according to the electric field. The electric field distribution of the shortest distance _ into the potential _ the layer of the layer and the Μ # # # The electric field in 701 is distributed by the axial center n (four) _, the result of the village mosquito money transmission, is not conducive to the speed of photodetection reaction.

X knows that the overlapping multi-color color Detector and CCD are used to overcome the problem of the power supply electrode slave, and the slave coffee electrode is called the butterfly technology; but the goal is not to reach the material of the fully transparent electrode to solve this problem. (4) There is a problem of repeating the multilayer upper electrode and the fine (four) paste | axis coffee (four). The above-mentioned RGB color light-emitting sheet is used to indirectly decompose color pixels, and is controlled by the color filter manufacturing technology for a long time. Nowadays, the active direct inspection of the second shop has been very popular, and the method of indirect spectroscopic filtering should be used to reduce the cost and improve the resolution. SUMMARY OF THE INVENTION In view of the five shortcomings of the conventional image sensor manufactured by the above prior art, that is, a conventional three-to-multi-color layer overlapped in the same position of the serial light-detecting diode, although the color can be reduced The use of filters and the ability to improve resolution; but not ideal. 'For example, high-voltage power supply with multiple layers of positive and negative reciprocal series connection and surface multi-layer surround electrodes occupy most of the light entrance. 11 1378553 I. The upper electrode of the upper and lower power supply mode occupies the light incident position and reduces the sensitivity and resolution. Second, the relative position structure of the upper and lower power supply electrodes 'forms the uneven distribution of the electric field generated by the depletion of the depletion region in the pN semiconductor to generate the potential barrier, so that the photoexcitation generates electrons and holes, and the push current in the push region has a sequential output. It is not conducive to the problem of the speed of photodetection reaction. Fourth, it is known that the above-mentioned multi-layer deposition epitaxial ray-detecting structure cannot eliminate the slow diffusion region, and is not conducive to the short-wavelength illuminating problem with high absorption coefficient. The invention utilizes the patent name of the invention patent application "application invention patent number: 095146963" · "coaxial optical fiber with refractive index distribution on the radius and its symmetry conductor light inspection wire __light guide system" The structure of the coaxial semiconductor light detecting is made into a coaxial optional multi-wavelength light detecting diode structure. The structure of the fine co-construction and the overlapping of the upper and lower multi-color layers enables the depth-receiving layer in which the respective colors can be deep into the wavelength, the electrons and the hole pairs generated by the light-emitting side of each layer, and the radial electric field formed by each of the contact faces. Drive, take out the shortest equidistant path to push the current flowing to each of the same two external electrodes, so as to detect the photocurrent of each layer of wavelength. Then, the amount of current outputted by each layer can be used as the content of the input light wave or image, and can be detected and stored, and the above problem can be solved. Coaxial semiconductor detectors - two types of electrodes that are powered by positive and negative internal and external coaxial equidistant power supply, ore (4) spectroscopy and other thickness of the ring-shaped semiconductor shaft, and 12 as follows: Current variation of the coaxial semiconductor detector structure. The invention adopts the structure method of supplying the reverse test and collecting the photocurrent, and adopts the following three to simultaneously solve the problem of high scaly, high anti-lining and high sensitivity: the optional multi-wavelength photodetector and The selected three-color coaxial color image sensing has the coaxial structure of the light-detecting diode as shown in FIG. 8 , so that the lower layer of the upper surface of the conventional light-detecting diode electrode is turned into the same reduction arrangement. Coaxially co-constructing the coaxial optional wavelength-detecting diode, the selected multi-color layer or the selected three-color coaxially structured photodetecting diode, and overlapping the strings on the same axis to form -_optional The method of the multi-wavelength photodetector is as shown in FIG. The thickness of the shaft-detecting diode of each color is the depth at which the wavelength can be expected to be incident. The multi-color or three-color outer ring electrode can obtain the photoelectric flow of each color, and can be used as the output result of the input light wave or image content of each pixel. The horizontal line of the same color ray and the vertical column of each color color photodetector can be used as an image sensor, such as a digital camera or a digital camera. The description of the following is as follows: The coaxial structure of the light-detecting diode is as shown in Fig. 8, and the lower layer of the conventional light-detecting diode electrode is arranged in a line to be coaxially arranged. Then, the photo-excited layer P-depletion region is no longer hidden under the bottom layer in the flat-layer distribution pattern, and the shape 13 ^ circumcision bare space ___ wheel detection photodiode is just (four). U diagram example I 乂 _,. The structure is a coaxial axial electrode, 802 a μ type annular semiconductor layer, 8〇34ί 赖8〇2 is ~ rnw±^mBL ! clothing conductor layer, cut into p-type clothing-shaped conductor layer, 805 is The coaxial external production temporary glazed cloth-shaped electrode, 806 is an insulating dielectric layer, and 807 is an axial center it's age φ AJj god 4 output end. The annular depletion zone (ίΜ Ν-Ν junction) is directly exposed in the form of direct and first-faced mode, and even if the wavelength photon is taken on the surface, it can be immediately received. Because of the electron-to-hole pairing of the wire, it accelerates directly in the electric field of the pushing region, and directly forms a fast-moving push-to-current output, and the short-wavelength can be quickly reacted. This solves the above-mentioned fourth problem. J_ The annular equal-thickness PN junction region in the coaxial photodetecting diode of the present invention is freed to generate a positive-negative radial equidistant distributed electric field of the built-in (10) ILTIN, as shown in FIG. The electrons and holes generated by the direct injection of photons form a radius to the electric field driven by each X PN junction, and are pushed to the inner and outer electrodes of each coaxial layer by the shortest equidistant path, and the fast reaction current can be directly taken out; Photons that are not as conventional must penetrate the diffusion region in the p-type semiconductor above the depletion layer to produce a diffusion current that delays the output. Therefore, the same axis detection diode can obtain a high reaction speed and solve the third problem. The internal current thus generated flows from the axial electrode to the coaxial outer ring conductor as the radius is radially equidistant, as shown in the top view of the coaxial photodiode of Fig. 9. It can also be seen from this top view that the coaxial inner and outer electrodes provided with reverse bias power supply, in terms of the main detection area of the unit pixel area, the power supply 1378553 does not block the photon entry path. However, in the case where the entire pixel position is received by the optical zone, only the axial electrode has no photon entry point, which occupies a light detection ratio, and does not cause shading loss and absorption loss. Therefore, the coaxial light detecting structure of the present invention can improve the light reflecting reflection efficiency and the receiving sensitivity, and can solve the second problem. For more accurate receiving sensitivity, a smaller diameter or transparent axial electrode and an outer ring electrode can be used to select the incident photon to be selected into the lower layer according to the wavelength detection, so that no occlusion is obtained to obtain the absorption efficiency of the full pixel into the photon. The shading bond of the epitaxial process is deposited layer by layer from the upper and lower directions. It also solves the problem that the ITO electrode which is still transparent, such as ιη2〇3 doped 1 (10) such as 〇2, has a transmittance of about 81% or a little 鬲, and its light transmittance is not limited to 100%. Second, the coaxial optional multi-wavelength light-detecting diode, the selected multi-color layer or the selected _ three-color coaxial structured light-detecting diode axial co-construction, overlapping on the same axis to form a coaxial Choose multi-wavelength photodetector or special RGB tri-color

Coaxial color detector CCDD (COAXIAL COLOR DIODES DETECTOR hereinafter referred to as CCDD) method. Since the coaxial optional multi-wavelength photodetector of the invention can be made into a three-color layer, a four-color layer, a five-color layer, a six-color layer, a seven-color layer or more color layers, the multi-layer extraction output mode is respectively designed according to the photon injection depth capability. . However, in order to simplify the description and to understand, the following exemplified by the RGB two-color layer of red, green and blue, which is the same principle, achieves the same principle. This is a light-detecting diode in which the same pixel BGR is coaxially structured, and is vertically overlapped in the vertical direction, and is co-constructed by the same positive power supply. The color layers 15 are separated by a transparent layer. The axis color is checked by the green CCDD, as shown in Figure 10. 1001 is a blue light-homed light layer, 1002 is a green-light coaxial light-detecting layer, and 1003 is a lower-level red-light coaxial light-detecting layer, and the legs are coaxial cores that are co-constructed by the same axis. This is the same as the conventional multi-color layer overlapping in the same pixel area, and the same pixel arrangement can be appropriately detected at different depths to output the same pixel content; however, the photon of the prior art is required to be worn. Transmission: positive electrode N-type semiconductor layer-p-type semiconductor layer transparent electrode layer N-type semiconductor layer p-type semiconductor layer-transparent electrode layer N-type semiconductor layer p-type semiconductor layer-negative electrode layer recording layer, optical loss is very A. If the PIN structure is stacked, the photon must pass through more layers, such as · positive electrode _ - N type semiconductor layer - I type semiconductor layer - p type semiconductor layer - transparent electrode layer type 1 semiconductor layer type I semiconductor layer P type The semiconductor layer transparent electrode layer type semiconductor layer! The type semiconductor layer, the p-type semiconductor layer, the negative electrode layer and the like have more layers, the light loss is larger, and the supply voltage must be higher. In the coaxial color detector structure of the present invention, the photon only has to pass through: a blue I-type semiconductor layer, an insulating light-transmissive layer, a green germanium-type semiconductor layer, a light-insulating layer, a red germanium-type semiconductor layer, and the light loss is extremely low. Therefore, the power consumption can be reduced and the sensitivity can be improved, and the image can be taken under darker conditions. Moreover, the present invention uses a coaxial core common electrode (which can be shared by the positive axis or the negative of the axial center, depending on the needs of the selected semiconductor material). The 1378553 mode is used for coaxial power supply, which not only simplifies the circuit but also improves the resolution, and can share the electrode. The connection is used as a digital image capturing structure for address scanning, and constitutes a product of a planar color image sensor. Therefore, the present invention can solve the first problem. Third, the horizontal line of each coaxial color detector and the vertical column of each of the coaxial color detectors on the same plane to form image sensing equipment. The coaxial line of each coaxial color detector is horizontally arranged, and the power supply line connected to the bottom is made as a horizontal line of the vertical direction scanning line (VIRTICAL SCANE LINE). The three-pin photocurrent detection lines of each of the coaxial color detectors in the vertical column are connected in parallel with the same color, and the image can be randomly located to scan and retrieve the image valleys of the full-plane money address. It is used in applications such as digital cameras, digital cameras, various scanners, and special purpose light inspection equipment. Due to the high resolution capability of the coaxial color detector of the present invention, it can be made into ultra-fine or ultra-precise applications. High-sensitivity and Wei-force can be used to detect dark field images with ultra-low illumination. High-speed response time characteristics for ultra-high speed image analysis. The exposed light-receiving area can directly absorb high-energy ultra-low-wavelength light waves, such as shorter wavelengths of light above the ultraviolet region to detect ultra-short-wavelength light detectors. More importantly, the present invention and the patent name of the application for the invention patent "Application No. 095146963": "Coaxial optical fiber with refractive index distributed in radius and its coaxial semiconductor light source and photodetector Example 2 of FIG. 16 is a structural principle of coaxial coaxial co-construction of ".. coaxial semiconductor transceiver on the same substrate", and applied for invention 17 patent "application invention patent case number" The patent name of "_〇9〇16号": The structural principle of the coaxial light-emitting diode in the "coaxial light-emitting diode structure and its color display". Because the illuminating and the detector coaxial coaxial power supply, such as the combination on the plane, can be made into a coaxial camera and a device that displays a common face or a partial time surface structure. When using video telephony or video conferencing (VIDEO CONFERRENCE), it is possible to save the external display of the display and the inconvenient and complicated external wiring of the camera equipment, reducing the cost and improving the usability due to the 2-in-1 function. Such a combination can be made into a finely reduced inner-view camera for medical use, and the coaxial light-emitting diode is illuminated as illumination, and the coaxial light-detecting diode is used for full color or color separation detection to reduce the cause of the patient being examined. Into the pain of the large bundle of light guiding fibers into the body. The above various image sensors that use innovative methods have removed color; light weight and power saving after the light sheet and complicated redundant circuits can be made into more human consumption products. To sum up, the present invention can solve the above conventional color image sensor and its application on the photodetector after repositioning the coaxial power detecting diode power supply electrode and detecting the image content structure, and achieve the following objectives: First, the coaxial light-detecting diode detection efficiency improvement and the three-color coaxial shared co-construction, the resolution of the color detector composed of it is increased by three times. Second, the electrode line is blocked at the exit, and the light source opening becomes larger to improve the sensitivity. Third, the first layer of bare exposed area is exposed to light, short-wavelength light detection is easier, and the number of light penetration layers is reduced, which can greatly reduce the multilayer attenuation and improve the receiving sensitivity and color saturation. 1378553 can obtain the quality of the product. Fourth, direct inspection to get rid of the complexity of using color light film and reduce costs. [Embodiment]

The following is an example of an embodiment of the present invention: Example mu ί 'J color illuminator' and vertical pixel 2304_color-receiving wire for increasing the pixel density arrangement and repeating the bending pattern, the sinuous image sense formed on the plane The detector structure is an embodiment and is illustrated as shown in FIG. The present invention has been described with respect to the various elements of the various reference numerals, which are regarded as the same or functionally similar elements, and are intended to illustrate the main implementation features of the examples in a very simplified schematic manner; therefore, this illustration is not intended to depict The features of the actual embodiments are not intended to depict the number of components and the relative dimensions, and the drawings are not drawn to scale, and the coaxial color light-receiving diode structure according to the present invention is basically drawn.

5. Coaxialized optical inspection equidistant power supply electrode structure, the recording current flows out rapidly in the radial electric field, which can improve the reaction speed and make the quality better. Referring to Figure 11, each color illuminator in the color image sensor is composed of 3072 X 2304 = 7, 077, 888 CCDD (coaxial color photodiode) as shown in Fig. 9. Since each CCDD 1101 is directly illuminating and directly detects the color of the pixel of the address, the color stencil is no longer used above the CCDD. The connecting wires 11〇2 of the 3072 axes of 3072 CCDDs in each horizontal direction are connected to the bottom of the image sensor, and connected to the vertical step-scanning multiplexer 11 影像3 of the image sensor (VERT I CAL STEP SCM AND MULTIPLEXER PROCESSOR) Control circuit. When the timing generator 1 (TIMING GENERATOR) starts the signal required for imaging, according to the content of the horizontal address line, the positive voltage of each horizontal column axis is provided to the axis of each CCDD in the same column. In the same column scan power supply on-time, the camera's horizontal step-scan multiplex processing 11〇5 OKMZOTAL STEP SCAN AND MULTIPLEXER PROCESSOR) signal control power 19 1378553 road ' also according to the address required for the camera to output negative power one by one to CCDD Same as above', in analog signal processor 1106 (ANAL〇G SIGNAL pR〇CEs ^ f check line and column intersection pixel address (CR〇ss p〇INT IMAGE Na,: color RGB current signal content, - Output the respective color-dependent level variable bit conversion circuit U〇7 (A/DCONVERTER), and then by the digit 匕^

Digital signal PROCESSOR ) IJ (dirty RFACE SECTION) is output to each display or storage device - 3072 (10) of the image detection function on the same level II. When the camera needs to be numbered, according to the second level of the health line, you want to take a photo. If you want to take a photo, you can take a photo of the horizontal step-scan multiplexer processor signal control circuit. According to the address of the camera, the negative voltage is output to the (10) coaxial outer ring electrode. ί ίίη (4) The current signal of each CCDD on the pixel address of the intersection of the second row and each vertical column is detected. After the content. And output one by one! ^ ratio conversion digital conversion circuit (A / D C_RTER), and then by the number:, control and send to the interface end to output to each display or store $ system circuit 2304 horizontal rows (5) (10) After the $$ Fen's, you get a complete checkout action of the screen image. The heavy phase program can continuously continuously convert the content of the thief to the upper part of the city. Figure 10 shows the coaxial color illuminator of the present invention according to the face-to-construction of the optical inspection and the various forms of the . & - ^ 1〇 and the example of Fig. 11, the color of the coaxial color refractory is in the pixel structure, and the image sensing function can be taken at a higher resolution. The depth of the human body = the oximeter wavelength output selection of the photodetector or camera "& flat (10) ^ a '3 check g ' and special ^ repeating flexed arrangement of vertical ribs 4 ~ | solid coaxial color inspection The first high-density color image sensor structure formed on the plane, the formation of 3 20 1378553 resolution, high sensitivity, multi-wavelength output selectivity and the removal of the low thickness of the color light film will make our country here. The leading position of technology has greatly surpassed that of Europe, America and Japan. It should be understood that the function of each of the above components and its coaxial light-detecting diode function, or the function of two or more components and its coaxial use detection image sensing function , can be effectively applied alone or together in other types of coaxial co-structured light detection systems of the above type.

Although the present invention illustrates and illustrates the present invention with a coaxialized photodetector diode and its coaxial selectable multi-wavelength combined coaxial photodetection system, it is not intended to limit the invention only to such pictorial details, as Various modifications and changes may be made to the present invention without departing from the spirit and scope of the invention. Without further analysing the above disclosure, the gist of the present invention is fully disclosed, and the present invention can enable people to apply existing knowledge before merging the basic features of the general or specific aspect of the present invention based on prior art views. Modifications of the present invention are applied to various applications or other materials are applied to the present invention; and the modifications are intended to be included in the scope of the accompanying claims. FIG. 2 is a schematic diagram showing the relationship between the absorption coefficient and the intrusion depth of various materials, FIG. 3A is a cross-sectional view of the embodiment of US 4,677, 289, FIG. 3B is the NOZAKI 'US No. 4,677,289, and the circuit representation thereof. Figure 4 is a patent representative of US 5,965,875, MERRILL. Figure 5 is a patent implementation of US 5,965,875, MERRILL. Figure 6A shows the structure of a conventional PN light-detecting diode and a built-in electric field. 6B is a conventional PIN light-detecting diode structure and built-in electric field display. FIG. 7 is a schematic diagram of a conventional ring-shaped power supply front-illuminated light detector, an empty space, and a vertical cross-sectional view of a series of 8 coaxial coaxial light-detecting diode structures. FIG 21 1378553 PN junction tolerance radially internal electric field distribution = schematic top view of a light diode structure 11 is a perspective cross-sectional diagram of the solid image sensor Coming to _ · DESCRIPTION The main reference numerals in the field plane

701 Depletion layer 702 Si〇2 insulating layer 703 Ring electrode 704 Anti-reflection layer 705 P-type semiconductor layer 706 Electric field distribution 707 Photon injection 708 n_type substrate 801 Coaxial axial electrode 802 Ν-type annular semiconductor layer 803 Type I ring semiconductor Layer 804 Ρ-type annular semiconductor layer 805 coaxial outer ring electrode 806 insulating dielectric layer 807 axial common output. 1001 blue coaxial coaxial inspection layer 1002 green coaxial coaxial inspection layer 22 1003 red light with sleeve inspection layer 1004 concentric co-construction overlapping string of core electrodes 1101 coaxial color detection diode 1102 axis electrode connection wire 1103 vertical step In-scan multiplexer processor 1104 timing generator 1105 horizontal step-scan multiplex processing 1106 analog signal processor 1107 analog-to-digital conversion circuit 1108 digital signal processor Π09 interface end ten, patent application scope: 1 ♦ copper substrate fabrication The two inner and outer conductors powered by the shaft are separated by a coaxial semiconductor light detecting structure composed of a plurality of concentric annular annular semiconductor layers or conductor layers, so that a positive and negative coaxial electrode is formed to coaxially supply a circular semiconductor layer for detecting light. After that, the direct photo-image photon energy of the ring-shaped optical semiconductor depletion zone is reached, and the structure of the driving current for detecting the excitation current and the hole pair is separated under the action of the uniform radius to the built-in electric field. , - kind _ optional money length detector structure, its _ output silent monochrome wave 23

Claims (1)

1003 red light with sleeve inspection layer 1004 concentric co-construction overlapping string axis electrode 1101 coaxial color detection diode 1102 axis electrode connection wire 1103 vertical step scan multiplexer processor 1104 timing generator 1105 horizontal stepping Scanning multiplex processing 1106 analog signal processor 1107 Analog-to-digital conversion circuit 1108 Digital signal processor Π09 interface end 10, patent application scope: 1 ♦ Two inner and outer conductors powered by the shaft are fabricated on the copper substrate, and the intervals are multi-layered concentric circles A coaxial semiconductor light-detecting structure composed of a ring-shaped semiconductor layer or a conductor layer is formed by coaxially supplying a toroidal semiconductor layer with positive and negative coaxial electrodes for detecting light, and a direct Wei image photon is obtained Energy, and under the action of a uniform radius to the built-in electric field, the structure of the driving current for detecting the excitation current separated from the pair of holes is detected. , - _ optional money length detector structure, its _ output silent monochrome wave 23 1378553 . » Long or scheduled multi-color selection of coaxial color detector structure, including: detectable red wavelength coaxial inspection Light diode; or green wavelength coaxial detection diode can be detected; or "T detects the blue wavelength and the light detection diode; or can detect the single wavelength coaxial detection diode; and the upper column is electrically connected The secret electric light is structured by a common structure, and the wavelength can be incident on the depth side and overlapped vertically, and the outer ring electrodes are coaxial with each wavelength. • The structure of each wavelength is detected separately. 3 A coaxial optional multi-wavelength photodetector structure as claimed in claim 2, which comprises a structure of light-detecting diodes plus an insulating light-transmissive dielectric layer. ' 4 — The color-changing light 11 structure, which is composed of a coaxial color detector structure that outputs three color wavelengths, and includes: a red wavelength coaxial detection diode can be detected; or • a green wavelength coaxial detection diode can be detected. Or a blue-wavelength coaxial light-detecting diode can be detected; and the axial power supply or the power supply and the light-guiding axis of the above-mentioned three structures are connected in common, and the vertical wavelengths can be arranged upright and overlapping according to the wavelengths, and Each of the wavelength coaxial outer ring electrodes detects the structure of each wavelength content. 5 A coaxial color detector structure according to claim 4, which comprises a light-transmitting diode between each wavelength plus an insulating light-transmissive dielectric layer structure. 24 1378553 ♦ « An image sensor consisting of a coaxial photodetector diode or a coaxial photodetector structure as described in claim 2 of the patent application. For example, in the image sensor according to claim 6, the connection line of all the coaxial detectors of the horizontal axis of each horizontal line is used as the positioning power supply vertical scanning structure and the vertical column of each coaxial detector The same wavelength outer ring conductor electrode is connected as the content of the detected wavelength. A CAMDISER (CAMERA AND DISPLAYER-CMDI structure 'characteristic is an image sensor consisting of a light-detecting diode or a color detector that takes in pixels) is occupied in whole or in part on a display of the same plane to achieve a In the flat device, the camera and the imaging function share the structure. A photodetector structure as described in claim 8 of the patent scope, wherein the photodetector of the camera is coaxial with the axis of the coaxial photodetector structure as claimed in claim 2, and coaxial with the same pixel position The axis of the light-emitting diode is shared by the axial power supply. XI. Schema: 25