TWI376732B - Ion implantation method - Google Patents

Abstract

An ion implantation method utilized for conducting ion implantation of a target is disclosed. Implanting the target using an ion beam including a uniform scan velocity cooperates with rotating the target. Besides, it also can implant the target by a non-uniform scan velocity without rotating the target. In the present invention, the uniform ion beam is unnecessary to be provided to obtain a specific dose profile, and so as to reduce the manufacturing time and can improve the production yield.

Description

Disclosure of the Invention: [Technical Field] The present invention relates to an ion implantation method, and more particularly to an ion implantation method capable of producing a special dose ion-distribution cloth. [Prior Art] Near-gas is a complex process such as large-scale integration (LSI) and memory semiconductors. The semiconductor substrate is larger in size and extremely expensive, so it is more accurately controlled. Doping to meet the volume and density of large semiconductor devices is an important issue. As a result, the practical application of ion implantation methods has become more important. In general, the ion implantation method ionizes the molecules to be doped and accelerates the ionized dopants to scan a specific dose of ions into a specific region of a substrate. Among them, the ion implantation method can control the dopant more precisely to provide better uniformity. In addition, in the manufacturing process of semiconductor devices, the distribution of gate critical dimensions (CDs) directly affects product manufacturing yield. However, it is very difficult to control the change of the transistor parameters depending on the distribution of the gate CD on the substrate and the process of forming a spacer next to the side wall. When the size of the substrate is larger than 300mm and the semiconductor device is getting smaller and smaller, 'controlling the change of the transistor parameters will be a major problem. 15 That is, the hard mask and the gate pattern etching process of the gate will be It does not have a fixed size depending on the position of the substrate. Therefore, the dimensions of the gates are inconsistent to produce transistor parameters that vary according to different gate lengths. Therefore, ion implantation procedures in a variety of semiconductor processes often require arbitrary distribution of doses and arbitrarily changed characteristics in the plane of the substrate.

Claims (1)

1376732 Correction on February 3rd, repairing %", applying for patent ~^ 1. 2. 3. Secret Linzi planting people - pure, to plant in the miscellaneous _ into - non-equal ^ material, the ion implantation method, including The following steps: providing an ion beam, wherein the ion beam contains a plurality of ions. The degree of concentration = the concentration distribution of the implanted ions required to change the ion beam, changing the ion concentration of the ion beam to rotate the target; The book of the towel is the same as the constant velocity to be described. The method of the sub-planting method includes an adjustment method of the material--the angle of the hole, an ion implantation method for implanting ions into a dose. _ sub-presentation method, sharp-non-uniform provides an ion beam, wherein the ion beam contains a plurality of ions; - rotating the target; Geng according to the practice _ Newman away from only the thick limb cloth; Also, as well as 4. 5. The ion ion of the ion beam towel is based on the constant velocity reduction of the dry material. The higher the wall. The ion-germination method described in claim 3 further includes adjusting the dryness of the dry material. ... the angle of the vertical axis 6' species Xuan Xianfang _, secret linzizi-tree, to form in the practice Io implantation of a uniform dose distribution, the ion implantation method comprising the steps of: 'providing an ion beam, wherein the ion beam contains a plurality of ions; and, sweeping the ion beam to the age of the ion beam The rate of money is scanned for her material, wherein the scanning rate refers to the scanning rate of a single scan and the scanning rate is a variable value; and the control of each single finger is performed according to the concentration distribution of the implanted ions required for the miscellaneous materials. The scan rate curve, and an average rate for each single scan is adjusted with the dose distribution 18. The non-implantation method described in Item 2 of October 2, 101, further includes calculating a sweep rate curve of the ion beam and rotating the dry material, wherein the scan rate curve is for the fear distribution of the ion beam The concentration distribution of the implanted ions required for the target is obtained by calculation. The ion implantation method of claim 6, further comprising adjusting an angle of one of the vertical axes of the dry material. ---> A method of adjusting the ion beam scanning rate for injecting a plurality of ions in an ion beam into a target to form a non-uniform dose distribution ion implantation in the target, wherein The ion beam is a non-uniformly distributed ion beam, and the method for adjusting the ion beam scanning rate comprises: obtaining a concentration distribution of the ion beam; 10. 11. 12. a concentration distribution of the implanted ions in the beating handle; If the rate of the sweep rate of the ship is requested, the scan rate curve θ v.= is known to be unknown. If the heart-nosed curve is not inserted into a valid interval value, the request item urn 钦娜科 bundles the material, and the range of the rate curve exceeds the effective interval, and the package contains the concentration distribution of the ion. , 5 weeks, if the request item η thief light department is (four) material adjustment step, recalculate the scan rate curve. 'Into the π as described in the request π, the whole ion beam sweep rate contains the wafer. -...the method of dragging leather, wherein the target is 13.