TWI372460B - Termination trench structure for mosgated device and process for its manufacture - Google Patents

Termination trench structure for mosgated device and process for its manufacture

Info

Publication number
TWI372460B
TWI372460B TW097103715A TW97103715A TWI372460B TW I372460 B TWI372460 B TW I372460B TW 097103715 A TW097103715 A TW 097103715A TW 97103715 A TW97103715 A TW 97103715A TW I372460 B TWI372460 B TW I372460B
Authority
TW
Taiwan
Prior art keywords
manufacture
trench structure
termination trench
mosgated device
mosgated
Prior art date
Application number
TW097103715A
Other languages
Chinese (zh)
Other versions
TW200840042A (en
Inventor
Ling Ma
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of TW200840042A publication Critical patent/TW200840042A/en
Application granted granted Critical
Publication of TWI372460B publication Critical patent/TWI372460B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
TW097103715A 2007-01-31 2008-01-31 Termination trench structure for mosgated device and process for its manufacture TWI372460B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88740207P 2007-01-31 2007-01-31
US12/011,290 US8017494B2 (en) 2007-01-31 2008-01-25 Termination trench structure for mosgated device and process for its manufacture

Publications (2)

Publication Number Publication Date
TW200840042A TW200840042A (en) 2008-10-01
TWI372460B true TWI372460B (en) 2012-09-11

Family

ID=39674394

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097103715A TWI372460B (en) 2007-01-31 2008-01-31 Termination trench structure for mosgated device and process for its manufacture

Country Status (3)

Country Link
US (1) US8017494B2 (en)
TW (1) TWI372460B (en)
WO (1) WO2008094497A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI405270B (en) * 2009-01-07 2013-08-11 Niko Semiconductor Co Ltd Method for manufacturing trench mosfet device with low gate charge and the structure thereof
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
CN103426738B (en) 2012-05-17 2018-05-18 恩智浦美国有限公司 Trench semiconductor device and its manufacturing method with edge termination structures
US9496382B2 (en) * 2013-11-21 2016-11-15 Chengdu Monolithic Power Systems Co., Ltd. Field effect transistor, termination structure and associated method for manufacturing
US9362394B2 (en) 2014-06-18 2016-06-07 Freescale Semiconductor, Inc. Power device termination structures and methods
US9397213B2 (en) 2014-08-29 2016-07-19 Freescale Semiconductor, Inc. Trench gate FET with self-aligned source contact
US9553184B2 (en) 2014-08-29 2017-01-24 Nxp Usa, Inc. Edge termination for trench gate FET
US9680003B2 (en) 2015-03-27 2017-06-13 Nxp Usa, Inc. Trench MOSFET shield poly contact
TWI757758B (en) * 2020-06-02 2022-03-11 台灣半導體股份有限公司 Multi-trench schottky diode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165854A (en) * 1998-05-04 2000-12-26 Texas Instruments - Acer Incorporated Method to form shallow trench isolation with an oxynitride buffer layer
US6396090B1 (en) * 2000-09-22 2002-05-28 Industrial Technology Research Institute Trench MOS device and termination structure
US6921699B2 (en) * 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination
US7023069B2 (en) * 2003-12-19 2006-04-04 Third Dimension (3D) Semiconductor, Inc. Method for forming thick dielectric regions using etched trenches
JP2007531988A (en) * 2004-03-01 2007-11-08 インターナショナル レクティファイアー コーポレイション Self-aligned contact structure for trench devices
US8564051B2 (en) * 2004-04-09 2013-10-22 International Rectifier Corporation Power semiconductor device with buried source electrode

Also Published As

Publication number Publication date
US8017494B2 (en) 2011-09-13
US20080227269A1 (en) 2008-09-18
TW200840042A (en) 2008-10-01
WO2008094497A1 (en) 2008-08-07

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