TWI366235B - High switching speed two mask schottky diode with high field breakdown - Google Patents

High switching speed two mask schottky diode with high field breakdown

Info

Publication number
TWI366235B
TWI366235B TW096143158A TW96143158A TWI366235B TW I366235 B TWI366235 B TW I366235B TW 096143158 A TW096143158 A TW 096143158A TW 96143158 A TW96143158 A TW 96143158A TW I366235 B TWI366235 B TW I366235B
Authority
TW
Taiwan
Prior art keywords
mask
schottky diode
switching speed
field breakdown
high field
Prior art date
Application number
TW096143158A
Other languages
Chinese (zh)
Other versions
TW200921792A (en
Inventor
Shye Lin Wu
Original Assignee
Chip Integration Tech Co Ltd
Shye Lin Wu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chip Integration Tech Co Ltd, Shye Lin Wu filed Critical Chip Integration Tech Co Ltd
Priority to TW096143158A priority Critical patent/TWI366235B/en
Publication of TW200921792A publication Critical patent/TW200921792A/en
Application granted granted Critical
Publication of TWI366235B publication Critical patent/TWI366235B/en

Links

TW096143158A 2007-11-14 2007-11-14 High switching speed two mask schottky diode with high field breakdown TWI366235B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW096143158A TWI366235B (en) 2007-11-14 2007-11-14 High switching speed two mask schottky diode with high field breakdown

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096143158A TWI366235B (en) 2007-11-14 2007-11-14 High switching speed two mask schottky diode with high field breakdown

Publications (2)

Publication Number Publication Date
TW200921792A TW200921792A (en) 2009-05-16
TWI366235B true TWI366235B (en) 2012-06-11

Family

ID=44727986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143158A TWI366235B (en) 2007-11-14 2007-11-14 High switching speed two mask schottky diode with high field breakdown

Country Status (1)

Country Link
TW (1) TWI366235B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956963B2 (en) 2012-11-27 2015-02-17 Industrial Technology Research Institute Schottky barrier diode and fabricating method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009028248A1 (en) 2009-08-05 2011-02-10 Robert Bosch Gmbh A semiconductor device
TWI455209B (en) 2009-10-12 2014-10-01 Pfc Device Co Trench mos p-n junction schottky diode device and method for manufacturing the same
CN103887168B (en) * 2012-12-19 2017-03-01 竹懋科技股份有限公司 The manufacture method of Schottky rectifier cell and forming method
TWI514578B (en) * 2013-06-21 2015-12-21 Chip Integration Tech Co Ltd Structure of dual trench rectifier and method of forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956963B2 (en) 2012-11-27 2015-02-17 Industrial Technology Research Institute Schottky barrier diode and fabricating method thereof

Also Published As

Publication number Publication date
TW200921792A (en) 2009-05-16

Similar Documents

Publication Publication Date Title
HK1109496A1 (en) Schottky diode structure with enhanced breakdown voltage
FR2951864B1 (en) ELECTROMAGNETIC SWITCHING DEVICE
EP2184782A4 (en) Schottky barrier diode
EP2580863A4 (en) Integrated circuits with dual-edge clocking
EP2462377A4 (en) Solid state lighting device with improved heatsink
EP2446186A4 (en) Lighting device with reverse tapered heatsink
EP2082432A4 (en) Power switching semiconductor devices including rectifying junction-shunts
GB0918745D0 (en) Electro-optical switching device
GB2461881B (en) Switching device
EP2712085A4 (en) Switching circuit and semiconductor module
EP1902466A4 (en) Schottky diode with improved surge capability
EP2572450A4 (en) High power gallium nitride field effect transistor switches
FR2971358B1 (en) WIRELESS SWITCHING DEVICE
EP2704323A4 (en) Semiconductor switching element drive circuit
EP2033226A4 (en) Schottky diode with incorporated pn- junctions
HK1138103A1 (en) Switching arrangement
EP2566034A4 (en) Switching circuit
GB2464310B (en) Switching device
EP2641247A4 (en) Bipolar spin-transfer switching
DE602008000085D1 (en) switching device
EP2777056B8 (en) Illuminated, water- and dust-proof switching element
EP2195846A4 (en) Edge termination high voltage semiconductor device
ATE519215T1 (en) SWITCHING DEVICE
BRPI1005673A2 (en) shunt switch with semiconductor switching elements
GB2474144B (en) Leakage current dissipation devices

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees