TWI366235B - High switching speed two mask schottky diode with high field breakdown - Google Patents
High switching speed two mask schottky diode with high field breakdownInfo
- Publication number
- TWI366235B TWI366235B TW096143158A TW96143158A TWI366235B TW I366235 B TWI366235 B TW I366235B TW 096143158 A TW096143158 A TW 096143158A TW 96143158 A TW96143158 A TW 96143158A TW I366235 B TWI366235 B TW I366235B
- Authority
- TW
- Taiwan
- Prior art keywords
- mask
- schottky diode
- switching speed
- field breakdown
- high field
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 title 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096143158A TWI366235B (en) | 2007-11-14 | 2007-11-14 | High switching speed two mask schottky diode with high field breakdown |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096143158A TWI366235B (en) | 2007-11-14 | 2007-11-14 | High switching speed two mask schottky diode with high field breakdown |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200921792A TW200921792A (en) | 2009-05-16 |
TWI366235B true TWI366235B (en) | 2012-06-11 |
Family
ID=44727986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096143158A TWI366235B (en) | 2007-11-14 | 2007-11-14 | High switching speed two mask schottky diode with high field breakdown |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI366235B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8956963B2 (en) | 2012-11-27 | 2015-02-17 | Industrial Technology Research Institute | Schottky barrier diode and fabricating method thereof |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009028248A1 (en) | 2009-08-05 | 2011-02-10 | Robert Bosch Gmbh | A semiconductor device |
TWI455209B (en) | 2009-10-12 | 2014-10-01 | Pfc Device Co | Trench mos p-n junction schottky diode device and method for manufacturing the same |
CN103887168B (en) * | 2012-12-19 | 2017-03-01 | 竹懋科技股份有限公司 | The manufacture method of Schottky rectifier cell and forming method |
TWI514578B (en) * | 2013-06-21 | 2015-12-21 | Chip Integration Tech Co Ltd | Structure of dual trench rectifier and method of forming the same |
-
2007
- 2007-11-14 TW TW096143158A patent/TWI366235B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8956963B2 (en) | 2012-11-27 | 2015-02-17 | Industrial Technology Research Institute | Schottky barrier diode and fabricating method thereof |
Also Published As
Publication number | Publication date |
---|---|
TW200921792A (en) | 2009-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |