TWI360584B - Apparatus for fabrication of carbon nanotubes - Google Patents

Apparatus for fabrication of carbon nanotubes Download PDF

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TWI360584B
TWI360584B TW94137885A TW94137885A TWI360584B TW I360584 B TWI360584 B TW I360584B TW 94137885 A TW94137885 A TW 94137885A TW 94137885 A TW94137885 A TW 94137885A TW I360584 B TWI360584 B TW I360584B
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carbon nanotube
guiding cavity
flow guiding
air inlet
preparation apparatus
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TW94137885A
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Chinese (zh)
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TW200716782A (en
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Bor Yuan Hsiao
Ching Chou Chang
Chi Chuang Ho
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Hon Hai Prec Ind Co Ltd
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1360584 _ 100年U月08日梭正替換頁 六、發明說明: 【發明所屬之技術領威】 [0001] 本發明涉及〆種奈来碳管製備裝置,尤其係一種熱化學 氣相沈積奈米破管製備裝置。 [先前技術] [0002]奈米碳管係一種新型一維奈米碳材料,由曰本研究人員1360584 _ 100 years U month 08 day shuttle replacement page six, invention description: [Technology of the invention] [0001] The present invention relates to a sputum type carbon nanotube preparation device, especially a thermal chemical vapor deposition nano Pipe breaking preparation device. [Prior Art] [0002] Nano carbon tube is a new type of one-dimensional nano carbon material, by the researcher

飯島澄男(S. Π jha)於丨991年首次發現。奈米碳管具有 優異之性質’如高抗張強度與高熱穩定性,並且隨著奈 米碳管螺旋方式之變化,奈米碳管可呈現出金屬性或半 導體性等。由於奈米碳管具有理想之一維結構以及在力 學、電學、熱學等領域優良之性質,其於材料科學、化 學、物理學等交叉學科領域已展現出廣闊之應用前景。 因此,實現奈米碳管之可控生長,係將奈米碳管推向應 用之關鍵。 [0003]目前,較為成熟之奈米碳管製備方法主要有三種:電孤 . 學 放電法、雷射燒蝕法以及化學氣相沈積法。其甲’ 氣相沈積法(CVD)以其工藝簡便 '成本低、彳批量生長等 特點而得到廣泛之研究與應用。 [0004] 094137885 化學氣相沈積法係利用含碳氣體作為碳源氣’於石夕或# , ,馇/圖所 石基底上生長出多壁或單壁奈米碳管。惟,如弟 示,傳統之熱CVD奈米碳管製備裝置1包括一反應爐17 該反應爐17包括一進氣口 13及一與該進氣口 13相對1^ 之出氣口 15。於奈米碳管之製備過程中,將〆表面形成 有催化劑層22之基底2裝載於所述反應爐I7内’反應氣 即與奈米碳管 1〇〇3412〇86-〇 11由進氣口 13水平方向吹送至出氣口 15 表單编號A0101 1360584 100年.11月08日梭正替换頁 之生長方向垂直。對於微細奈米碳管而言,即使該反應 氣體之流速緩慢,其亦將使得最終生長出之奈米碳管準 直性不佳》 [0005] 有鑒於此,提供一種可生長準直性奈米碳管之製備裝置 實為必要。 【發明内容】 [0006] 下面將以實施例說明一種奈米碳管製備裝置,其可實現 奈米碳管之準直性生長。Iijima Chengo (S. Π jha) was first discovered in 丨 991. The carbon nanotubes have excellent properties such as high tensile strength and high thermal stability, and the carbon nanotubes can exhibit metallic or semiconducting properties as the carbon nanotube spirals. Since the carbon nanotubes have an ideal one-dimensional structure and excellent properties in fields such as force, electricity, and heat, they have shown broad application prospects in the fields of materials science, chemistry, and physics. Therefore, the realization of controlled growth of carbon nanotubes is the key to pushing carbon nanotubes into applications. [0003] At present, there are three main methods for preparing relatively mature carbon nanotubes: electrical isolation, electrical discharge, laser ablation, and chemical vapor deposition. Its A' vapor deposition (CVD) method has been widely studied and applied due to its simple process, low cost, and mass growth. [0004] 094137885 The chemical vapor deposition method uses a carbon-containing gas as a carbon source gas to grow a multi-wall or single-walled carbon nanotube on a stone substrate of Shi Xi or # , , 馇 / 图. However, as shown by the younger brother, the conventional thermal CVD carbon nanotube preparation apparatus 1 includes a reaction furnace 17 which includes an air inlet 13 and an air outlet 15 opposite to the air inlet 13. In the preparation process of the carbon nanotubes, the substrate 2 on which the catalyst layer 22 is formed on the surface of the crucible is loaded in the reaction furnace I7. The reaction gas is the gas with the carbon nanotubes 1〇〇3412〇86-〇11. The mouth 13 is blown horizontally to the air outlet 15 Form No. A0101 1360584 100 years. On November 08, the growth direction of the shuttle replacement page is vertical. For the fine carbon nanotubes, even if the flow rate of the reaction gas is slow, it will cause poor collimation of the finally grown carbon nanotubes. [0005] In view of this, a collimable neat can be provided. The preparation device for the carbon nanotubes is really necessary. SUMMARY OF THE INVENTION [0006] Hereinafter, an embodiment of a carbon nanotube preparation apparatus which can realize collimated growth of a carbon nanotube can be described by way of examples.

[0007] —種奈米碳管製備裝置,用於導入奈米碳管生長用反應 氣體以製備奈米碳管,其包括一反應爐、一導流腔體及 一氣輸送管。該反應爐包括一第一進氣口及一出氣口; 該導流腔體設置於該反應爐内,其包括一頂部及一第二 進氣口,該頂部設置有複數開口;該氣體輸送管包括一 第一端口與一第二端口,該第一端口與第一進氣口密封 套接,第二端口與第二進氣口密封套接;奈米碳管生長 用反應氣體由位於該第一進氣口一側之該第二端口進入 該氣體輸送管,經由該第二端口導入該導流腔體,再經 由該導流腔體之導引使該反應氣體以與頂部表面成垂直 方向由該複數開口進入反應爐。 [0008] 相較於先前技術,所述奈米碳管製備裝置,其藉由採用 導流腔體改變奈米碳管生長所需之反應氣體流向,使該 流向由傳統之垂直於奈米碳管生長方向轉為平行於奈米 碳管生長方向,該種設置可以使奈米碳管具有較佳之準 直性。 094137885 表單編號A0101 第5頁/共14頁 1003412086-0 1360584 100年11月08日修正替換頁 【實施方式】 [0009] 下面結合附圖將對本發明實施例作進一步之詳細說明。 [0010] 參見第二圖,本實施例所提供之奈米碳管製備裝置10, 其包括一反應爐20、一導流腔體30、一氣體輸送管40以 及一加熱裝置12。 [0011] 該反應爐20包括一第一進氣口 22及一出氣口 24。 [0012] 該導流腔體30設置於所述反應爐20内,該導流腔體30大 致呈倒置之漏斗形狀,其包括一頂部32及一底部38,且 其内部形成一空腔。參見第三圖,該頂部32形成有規則 排列之複數開口34。該複數開口 34之形狀優選為圓形, 亦可選用如方形或三角形等其他平面幾何形狀,該開口 34之口徑尺寸為毫米級。該底部38設置有第二進氣口 36 ,當然,亦可將第二進氣口 36設置於導流腔體30之側壁 ,其能向導流腔體30内通入奈米碳管生長用反應氣體即 可。該導流腔體30之材質可選用不鏽鋼、陶瓷、石英等 〇 [0013] 該氣體輸送管40用於向導流腔體30内部形成之空腔中輸 送反應氣體,其包括一第一端口 42與一第二端口 44。該 第一端口 42與第一進氣口 22密封套接,第二端口 44與第 二進氣口 36密封套接。奈米碳管生長用反應氣體由位於 該第一進氣口 22—側之該第二端口 42進入該氣體輸送管 40,經由該第二端口 44導入該導流腔體30,再經由該導 流腔體30之導引使該反應氣體以與頂部32之表面成垂直 方向由該複數開口 34進入反應爐20。[0007] A carbon nanotube preparation apparatus for introducing a reaction gas for carbon nanotube growth to prepare a carbon nanotube, which comprises a reaction furnace, a flow guiding chamber, and an air delivery tube. The reaction furnace includes a first air inlet and an air outlet; the flow guiding chamber is disposed in the reaction furnace, and includes a top portion and a second air inlet, the top portion is provided with a plurality of openings; the gas conveying tube The first port is sealed with the first air inlet, the second port is sealed with the second air inlet, and the reaction gas for the carbon nanotube growth is located at the first The second port on one side of the air inlet enters the gas delivery tube, and is introduced into the flow guiding cavity via the second port, and the reaction gas is guided by the guiding cavity to be perpendicular to the top surface. From the plurality of openings, the reactor is entered. [0008] Compared to the prior art, the carbon nanotube preparation device changes the flow direction of the reaction gas required for the growth of the carbon nanotube by using a flow guiding cavity, and the flow direction is perpendicular to the nano carbon. The tube growth direction is parallel to the growth direction of the carbon nanotubes, and this arrangement can provide better collimation of the carbon nanotubes. 094137885 Form No. A0101 Page 5 of 14 1003412086-0 1360584 Revised replacement page of November 08, 100 [Embodiment] The embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. [0010] Referring to the second figure, the carbon nanotube preparation apparatus 10 provided in this embodiment includes a reaction furnace 20, a flow guiding chamber 30, a gas delivery tube 40, and a heating device 12. [0011] The reaction furnace 20 includes a first intake port 22 and an air outlet port 24. [0012] The flow guiding cavity 30 is disposed in the reaction furnace 20, and the flow guiding cavity 30 is substantially in the shape of an inverted funnel, and includes a top portion 32 and a bottom portion 38, and a cavity is formed therein. Referring to the third figure, the top portion 32 is formed with a plurality of openings 34 that are regularly arranged. The shape of the plurality of openings 34 is preferably circular, and other planar geometries such as squares or triangles may be used. The opening 34 has a diameter of the order of millimeters. The bottom portion 38 is provided with a second air inlet 36. Of course, the second air inlet 36 can also be disposed on the side wall of the flow guiding cavity 30, which can be used for the growth of the carbon nanotubes in the flow chamber 30. The reaction gas is sufficient. The material of the flow guiding cavity 30 can be selected from stainless steel, ceramic, quartz, etc. [0013] The gas conveying pipe 40 is used for conveying the reaction gas in the cavity formed inside the guiding flow chamber 30, and includes a first port 42. With a second port 44. The first port 42 is sealingly sleeved with the first air inlet 22, and the second port 44 is sealed with the second air inlet 36. The carbon nanotube growth reaction gas enters the gas delivery tube 40 from the second port 42 on the side of the first inlet 22, and is introduced into the flow guiding chamber 30 via the second port 44, and then through the guide The flow chamber 30 is guided such that the reaction gas enters the reaction furnace 20 from the plurality of openings 34 in a direction perpendicular to the surface of the top portion 32.

094137885 表單编號A0101 第6頁/共14頁 1003412086-0 1360.584 100年.11.月08日梭正替¥頁 [0014] 該奈米碳管製備裝置10進一步包括一基底50,該基底50 用於生長奈米碳管,其放置於導流腔體30之頂部32表面 。該基底50之材質可選用石英、矽、氧化鋁、氧化鎂等 。該基底50之表面形成有一催化劑層52,該催化劑層52 可由銘、鎮、鐵,或其合金等材料所構成。 [0015] 該加熱裝置12設置於反應爐20之周圍,用於對裝載於反 應爐20内之奈米碳管生長用催化劑層52進行加熱。該加 熱裝置12可選用高溫爐及高頻爐等加熱設備。 J [0016] 下面結合奈米碳管之製備過程詳細說明本實施例所提供 之奈米碳管製備裝置10之使用方法。, [0017] • 首先,將表面形成有催化劑層52之基底50放置,於該導流 腔體30之頂部32上方並與頂部32之表面直接接觸。亦可 以將該基底50不與導流腔體30直接接觸,比如採用架空 之方式將其設置於導流腔體30之頂部32上方一定距離之 處。該基底50優選為具有多孔結構之基底,其孔徑尺寸 優選為微米級,以利於氣體從孔中透過並垂直於基底50 流出。之後將導流腔體30放置於反應爐20内並連接好氣 體輸送管40。 [0018] 然後,於常壓下從第一進氣口 22通入載氣氣體,該載氣 氣體可藉由氣體輸送管40及第二進氣口 36進入導流腔體 30内,並藉由開口 34從該導流腔體30中流出至反應爐20 内。該開口 34可藉由機械加工形成,如鑽床鑽孔或沖壓 沖孔等。該載氣氣體可選用氫氣、氮氣、氨氣或其他惰 性氣體等。藉由加熱裝置12對反應爐20内之催化劑層52 094137885 表單編號A0101 第7頁/共14頁 1003412086-0 1360584 100年.11月08日核正替換頁094137885 Form No. A0101 Page 6 of 14 1003412086-0 1360.584 100 years.11. Month 8th Shuttle Right ¥00 [0014] The carbon nanotube preparation apparatus 10 further includes a substrate 50 for the substrate 50 The carbon nanotubes are grown on the surface of the top 32 of the flow guiding cavity 30. The material of the substrate 50 may be selected from quartz, tantalum, alumina, magnesia or the like. A catalyst layer 52 is formed on the surface of the substrate 50, and the catalyst layer 52 may be composed of a material such as Ming, Zhen, Iron, or an alloy thereof. [0015] The heating device 12 is disposed around the reaction furnace 20 for heating the carbon nanotube growth catalyst layer 52 loaded in the reaction furnace 20. The heating device 12 can be selected from a heating device such as a high temperature furnace or a high frequency furnace. J [0016] The method of using the carbon nanotube preparation apparatus 10 provided in the present embodiment will be described in detail below in conjunction with the preparation process of the carbon nanotubes. [0017] First, the substrate 50 having the catalyst layer 52 formed thereon is placed over the top 32 of the flow guiding cavity 30 and in direct contact with the surface of the top portion 32. The substrate 50 can also be placed in direct contact with the flow guiding cavity 30, such as by overhead, at a distance above the top 32 of the flow guiding cavity 30. The substrate 50 is preferably a substrate having a porous structure, the pore size of which is preferably on the order of micrometers to facilitate gas permeation from the pores and flow out perpendicular to the substrate 50. The flow guiding cavity 30 is then placed in the reaction furnace 20 and the gas delivery pipe 40 is connected. [0018] Then, a carrier gas is introduced from the first air inlet 22 under normal pressure, and the carrier gas can enter the flow guiding cavity 30 through the gas delivery pipe 40 and the second air inlet 36, and Outflow from the flow guiding cavity 30 into the reaction furnace 20 is made by the opening 34. The opening 34 can be formed by machining, such as drilling a drill or punching a punch. The carrier gas may be selected from hydrogen, nitrogen, ammonia or other inert gas. The catalyst layer 52 in the reaction furnace 20 is heated by the heating device 12 094137885 Form No. A0101 Page 7 of 14 1003412086-0 1360584 100. November 8th Nuclear replacement page

進行加熱。待催化劑層52之溫度昇高至預定溫度後,一 般為500度〜900度,從第一進氣口22通入反應氣體。所 述反應氣體可選用曱烷、乙烷、乙烯、乙炔等碳源氣。 該反應氣體經氣體輸送管40及第二進氣口 36進入導流腔 體30内,且藉由開口 34垂直吹向基底50,即與頂部32表 面成垂直方向由該複數開口 34進入反應爐20内。由於催 化劑之催化作用,通入到反應爐20内之碳源氣熱分解成碳 單元與氫氣;碳單元吸附於催化劑層52形成之催化劑顆 粒表面,待催化劑顆粒中吸附之碳單元達到飽和後將析 出從而可於催化劑顆粒位置生長出奈米碳管。而載氣氣 體與反應後產生之廢氣可藉由出氣口 24排出。 [0019] 參見第四圖,另一實施例中亦可直接於導流腔體30之頂 部32表面形成催化劑層60進行奈米碳管之生長。 [0020] 形成表面有催化劑層60之流腔體30之頂部32可由以下步 驟製作:Heat up. After the temperature of the catalyst layer 52 is raised to a predetermined temperature, it is generally 500 to 900 degrees, and a reaction gas is introduced from the first gas inlet port 22. The reaction gas may be selected from a carbon source gas such as decane, ethane, ethylene or acetylene. The reaction gas enters the flow guiding cavity 30 through the gas delivery pipe 40 and the second inlet 36, and is vertically blown toward the substrate 50 through the opening 34, that is, perpendicular to the surface of the top 32, enters the reaction furnace through the plurality of openings 34. 20 inside. Due to the catalytic action of the catalyst, the carbon source gas introduced into the reaction furnace 20 is thermally decomposed into carbon units and hydrogen; the carbon unit is adsorbed on the surface of the catalyst particles formed by the catalyst layer 52, and the carbon unit adsorbed in the catalyst particles is saturated. Precipitation allows the carbon nanotubes to grow at the catalyst particle sites. The carrier gas and the exhaust gas generated after the reaction can be discharged through the gas outlet 24. [0019] Referring to the fourth figure, in another embodiment, the catalyst layer 60 may be formed directly on the surface of the top portion 32 of the flow guiding cavity 30 for the growth of the carbon nanotubes. [0020] Forming the top 32 of the flow chamber 30 having the catalyst layer 60 on its surface can be made by the following steps:

[0021] 首先,可藉由機械加工如鑽床鑽孔或沖壓沖孔等,於導 流腔體30之頂部32形成規則排列之複數開口 34,之後於 該導流腔體30之頂部32表面形成與複數開口 34對應之掩 膜。本實施例可採用光阻製程,其具體步驟可為:於導 流腔體30之頂部32表面塗敷一光阻層;將一具有與複數 開口 34排佈對應之圖案之光罩置於光阻層上,於紫外光 中曝露一定時間;以氫氧化鉀等鹼性溶液為顯影劑,採 用濕式蝕刻法去除經過曝光之光阻材料,即可於導流腔 體30之頂部32表面形成掩蓋複數開口 34之掩膜。其中, 光阻材料可採用聚曱基丙烯酸甲酯、聚氯乙烯或聚碳酸 094137885 表單编號A0101 第8頁/共14頁 1003412086-0 100年.11月08日修正替換頁 1360584 酷等。 [0022] 其後,於所述導流腔體30之頂部32表面無掩膜區域形成 一催化劑層60。該催化劑層60之形成方法可採用離子鍍 膜法、射頻磁控濺鍍、真空蒸發法、化學氣相沈積法等[0021] First, a plurality of regularly arranged plurality of openings 34 may be formed in the top portion 32 of the flow guiding cavity 30 by mechanical processing such as drilling or punching punching, etc., and then formed on the top surface 32 of the flow guiding cavity 30. A mask corresponding to the plurality of openings 34. In this embodiment, a photoresist process may be employed. The specific step may be: applying a photoresist layer on the surface of the top portion 32 of the flow guiding cavity 30; and placing a photomask having a pattern corresponding to the plurality of openings 34 in the light. The resist layer is exposed to ultraviolet light for a certain period of time; the alkaline solution such as potassium hydroxide is used as a developer, and the exposed photoresist material is removed by wet etching to form a surface of the top surface 32 of the flow guiding cavity 30. The mask of the plurality of openings 34 is masked. Among them, the photoresist material can be polymethyl methacrylate, polyvinyl chloride or polycarbonate 094137885 Form No. A0101 Page 8 / 14 pages 1003412086-0 100 years. November 08 revised replacement page 1360584 Cool and so on. [0022] Thereafter, a catalyst layer 60 is formed on the surface of the top portion 32 of the flow guiding cavity 30 without a mask region. The catalyst layer 60 can be formed by an ion plating method, a radio frequency magnetron sputtering, a vacuum evaporation method, a chemical vapor deposition method, or the like.

[0023] 最後,去除所述導流腔體30之頂部32表面之掩膜。本實 施例使用有機溶劑(如丙酮等)去除掩膜,進而可獲得具 有複數開口 34,且表面形成有催化劑層60之導流腔體30 頂部32。 [0024] 本發明實施例所提供之奈米碳管製備裝置,其藉由導流 腔體改變奈米碳管生長用反應氣體之流向,使其與奈米 碳管之生長方向平行,進而可實現準直性奈米碳管之製 備。 1 [0025] 另外,本領域技術人員還可在本發明精神内做其他變化 ,如適當變化第一進氣口及出氣口之設置位置,導流腔 體之形狀及設置位置,或改變第二進氣口之設置位置, 以及開口之形狀及其尺寸大小等,只要其不偏離本發明 之實施效果即可。 [0026] 综上所述,本發明確已符合發明專利要件,爰依法提出 專利申請。惟,以上所述者僅為本發明之較佳實施例, 舉凡熟悉本案技藝之人士,於援依本案發明精神所作之 等效修飾或變化,皆應包含於以下之申請專利範圍内。 【圖式簡單說明】 [0027] 第一圖係先前技術中之奈米碳管製備裝置之結構示意圖 094137885 表單編號A0101 第9頁/共14頁 1003412086-0 1360584 100年11月08日梭正替換頁 [0028] 第二圖係本發明第一實施例之奈米碳管製備裝置之結構 示意圖。 [0029] 第三圖係本發明實施例之導流腔體之頂部示意圖。 [0030] 第四圖係本發明第二實施例之奈米碳管製備裝置之結構 示意圖。 【主要元件符號說明】[0023] Finally, the mask of the surface of the top 32 of the flow guiding cavity 30 is removed. In this embodiment, the mask is removed using an organic solvent (e.g., acetone) to obtain a top portion 32 of the flow guiding cavity 30 having a plurality of openings 34 and having a catalyst layer 60 formed on the surface. [0024] The carbon nanotube preparation device provided by the embodiment of the invention changes the flow direction of the reaction gas for the growth of the carbon nanotube by the flow guiding cavity to be parallel with the growth direction of the carbon nanotube, and further The preparation of collimated carbon nanotubes is achieved. [0025] In addition, those skilled in the art may also make other changes within the spirit of the present invention, such as appropriately changing the position of the first air inlet and the air outlet, the shape and setting position of the air guiding cavity, or changing the second. The position of the air inlet, the shape of the opening, its size, and the like, as long as it does not deviate from the effects of the present invention. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art of the present invention should be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0027] The first figure is a schematic view of the structure of a carbon nanotube preparation apparatus in the prior art. 094137885 Form No. A0101 Page 9 of 14 1003412086-0 1360584 On November 08, 100, the shuttle is being replaced. [0028] The second drawing is a schematic structural view of a carbon nanotube preparation apparatus according to a first embodiment of the present invention. [0029] The third figure is a schematic top view of the flow guiding cavity of the embodiment of the present invention. [0030] The fourth drawing is a schematic view showing the structure of a carbon nanotube preparing apparatus of a second embodiment of the present invention. [Main component symbol description]

[0031] 奈米碳管製備裝置 10 加熱裝置12 [0032] 反應爐 20 第一進氣口 22 [0033] 出氣口 24導流腔體 30 [0034] 頂部 32 開口 34 [0035] 第二進氣口 36底部38 [0036] 氣體輸送管40第一端口 42[0031] Nano Carbon Tube Preparation Apparatus 10 Heating Apparatus 12 [0032] Reaction Furnace 20 First Air Inlet 22 [0033] Air Outlet 24 Diversion Cavity 30 [0034] Top 32 Opening 34 [0035] Second Intake Port 36 bottom 38 [0036] gas delivery tube 40 first port 42

[0037] 第二端口 44基底50 [0038] 催化劑層52、60 1003412086-0 094137885 表單编號A0101 第10頁/共14頁[0037] Second Port 44 Substrate 50 [0038] Catalyst Layer 52, 60 1003412086-0 094137885 Form No. A0101 Page 10 of 14

Claims (1)

1360584七、申請專利範圍:1360584 Seven, the scope of application for patents: 100年.11月08日按正替換頁 1 . 一種奈米碳管製備裝置,用於導入奈米碳管生長用反應氣 體以製備奈米碳管,其包括: 一反應爐,其包括一第一進氣口及一出氣口; -導流腔體,其設置於該反應爐内,該導流腔體包括一頂 部及一第二進氣口,該頂部形成有複數開口,每個開口的 中轴線及該第二進氣口的中軸線均與該第一進氣口的中軸 線垂直;100 years. November 8th, according to the replacement page 1. A carbon nanotube preparation device for introducing a reaction gas for carbon nanotube growth to prepare a carbon nanotube, comprising: a reactor comprising a first An air inlet and an air outlet; a flow guiding cavity disposed in the reaction furnace, the guiding cavity comprises a top portion and a second air inlet, the top portion is formed with a plurality of openings, each opening The central axis and the central axis of the second air inlet are both perpendicular to the central axis of the first air inlet; 一氣體輸送管,其包括一第一端口與一第二端口,該第一 端口與第一進氣口密封套接,該第二端口與第二進氣口密 封套接; 一生長奈米碳管用之基底,該基底位於該反應爐内且放置 於所述導流腔體之頂部表面;a gas delivery tube includes a first port and a second port, the first port is sealed with the first air inlet, and the second port is sealed with the second air inlet; a substrate for the tube, the substrate being located in the reaction furnace and placed on a top surface of the flow guiding cavity; 奈米碳管生長用反應氣體由位於該第一進氣口一側之該第 二端口進入該氣體輸送管,經由該第二端口導入該導流腔 體,再經由該導流腔體之導引使該反應氣體以與頂部表面 成垂直方向由該複數開口進入反應爐。 2. 如申請專利範圍第1項所述之奈米碳管製備裝置,其中, 所述導流腔體之材質包括不鏽鋼、陶瓷、石英。 3. 如申請專利範圍第1項所述之奈米碳管製備裝置,其中, 所述第二進氣口設置於導流腔體之底部。 4. 如申請專利範圍第1項所述之奈米碳管製備裝置,其中, 所述第二進氣口設置於導流腔體之側壁。 5. 如申請專利範圍第1項所述之奈米碳管製備裝置,其中, 所述導流腔體呈例置漏斗形狀。 094137885 表單編號A0101 第11頁/共14頁 1003412086-0 1360584 _^ 100年11月08日核正替换頁 6.如申請專利範圍第1項所述之奈米碳管製備裝置,其中, 所述開口形狀為圓形,於所述導流腔體之頂部規則排列。 7. 如申請專利範圍第6項所述之奈米碳管製備裝置,其中, 所述圓形開口之口徑尺寸為毫米級。 8. 如申請專利範圍第1項所述之奈米碳管製備裝置,其中, 所述基底具有多孔結構,其孔徑尺寸為微米級。 9. 如申請專利範圍第1項所述之奈米碳管製備裝置,其中, 所述基底材質為石英、矽、氧化鋁、氧化鎂。The carbon nanotube growth reaction gas enters the gas delivery tube from the second port on the first inlet side, and is introduced into the flow guiding cavity via the second port, and then guided through the guiding cavity The reaction gas is introduced into the reaction furnace from the plurality of openings in a direction perpendicular to the top surface. 2. The carbon nanotube preparation apparatus according to claim 1, wherein the material of the flow guiding cavity comprises stainless steel, ceramics, and quartz. 3. The carbon nanotube preparation apparatus according to claim 1, wherein the second air inlet is disposed at a bottom of the flow guiding cavity. 4. The carbon nanotube preparation apparatus according to claim 1, wherein the second air inlet is disposed at a side wall of the flow guiding cavity. 5. The carbon nanotube preparation apparatus according to claim 1, wherein the flow guiding cavity is in the shape of a funnel. 094137885 Form No. A0101 Page 11 of 14 1003412086-0 1360584 _^ </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The openings are circular in shape and are regularly arranged at the top of the flow guiding cavity. 7. The carbon nanotube preparation apparatus according to claim 6, wherein the circular opening has a diameter of a millimeter. 8. The carbon nanotube preparation apparatus according to claim 1, wherein the substrate has a porous structure and has a pore size of a micron order. 9. The carbon nanotube preparation apparatus according to claim 1, wherein the base material is quartz, tantalum, alumina, or magnesium oxide. 10.如申請專利範圍第1項所述之奈米碳管製備裝置,其中, 所述基底表面形成有生長奈米碳管用之催化劑層。 11 .如申請專利範圍第10項所述之奈米碳管製備裝置,其中, 所述催化劑層由銘、錄、鐵,或其合金材料形成。 094137885 表單编號A0101 第12頁/共14頁 1003412086-010. The carbon nanotube preparation apparatus according to claim 1, wherein a catalyst layer for growing a carbon nanotube is formed on the surface of the substrate. The carbon nanotube preparation apparatus according to claim 10, wherein the catalyst layer is formed of a material, an alloy, an iron, or an alloy thereof. 094137885 Form No. A0101 Page 12 of 14 1003412086-0
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