1360256 九、發明說明： 【發明所屬之技術領域】 未發明係涉及一種整合主動天緩 指-種將主動天線整合於載板之中的自，模組’特別係 法。 τ叫軸組及其製造方 【先前技術】 由於無線射頻傳輪技術的快速發 也就越來越普遍。在理論上，單極天線的長度最 效率。_购峨組為例才；:;== 此對應的四分之一波長之長度即為3. 125咖。 因 然，’ ^匕一天線長度已遠大於微型化模組可接受的範 圍。於疋’為了解決此一問題，目前技術上的設計 使用組來串接較短的單極天線，進而組成主 動天各&，且〃利用天線控制模經的 為相同的電性長度，並且可再經由調整内部可變= / Ί /目—g知技術來看，大部分整合天線的射 Ϊ %^1 (PCB)'^ (FR-4) Λ上：質的基板來作為模組的主要載板，並將 製，反之上，進而再將包含天線控制模組等 來黏;於載 表S’ ^ Λ； ^ e ρ - 、疋，載板純粹只是用以當載具而 ^日日元件與天線圖形之間的電路連接之用，載板 1360256 之中的結構也只是用以作為線路走線佈局的分層結構。 如此-來，不僅因為硬體電路晶片、元件二增加 致成本提尚，此外，載板更因為要考慮能容納所有的電路 並且順利進行電路佈線，因而勢必會增加載板的尺寸大 以及分層數量。藉此，便無法同時滿足目前趨勢對於^口、 功能多、體積小以及成本低的需求。 ' °σ 【發明内容】 有鑑於此，本發明所要解決的技術問題在於，提佴— 種射頻模組，並且利用半導體製程之技術來將主動天_ 路整合於載板之中，以達到有效縮小整個模組的體積^ $目的。並且由於主動天線電路在設計上得以頻 =相當靠近，因而更能有效提升射頻模組應用上的電: 為了達到上述目的，本發明提出— 射頻模組，其包括：一矽，B Μ ，。主動天線之 及-主電路單心其中夕=電路i動天線電路單元 體製程整合於該矽晶片載板，並且該主半導 3=頻形成於該竭載板之 之表面，並且電性連接係黏著於該石夕晶片載板 頻訊號。 連接紅動天線電路單元，以處理該射 為了達到上述目的，本發明另提出— 天線電路早元，並且再利用一半導 故七、-主動 線=元以成型為，曰片載板天 之的★線迴路係整合形成於該石夕晶片m板之“早^ 6 1360256 著，再進行黏著一主電路單元於兮 與該主動天線電路單元形成電性载板之表面，以 整個模組體積尺寸之目的，而二㈢此’以達到縮小 於不同功能之應用產品。 s'且更容易設置應用 以上之㈣與接T來轉纟 進-步說明本發明為達成預定目的所，士白是為了能 =t而有關本發明的其他目的及優點 t手段及 及圖式_加以闡述。 將在後續的說明 【實施方式】 本發明主要是透過與以往不 頻模組令各元件的承載之载板，^ «板來作為射 整合於載板，藉此以縮小射頻模組的體積3等Ϊ關電路 供更方便設計、更不佔介門从u t 貝尺寸。攸而能提 射頻模組應用於各種需組解決方案，以利將 請參考第-圖，為本發明整人主…1產-上。 U例:卞構不思圖。如圖所示，本發明提供-種整人主叙 天線之射頻模組9,其包括： U動 電路單元2及-主電路單w ^片載板卜一主動天線 在射健如“ 其卜石夕晶片載板1即是 在射趣組9中用以作為承載元件用的載板。 尺 犬，：ίί天線電路單元2主要是透過-半導體製程之方 ^㈣^片載板1的成型過程中，就直接整合於該矽 曰曰 。並且主動天線電路單元2中進-步包含：一 Ϊί，2ί)1、一放大器電路202及-匹配電路挪。其中，1360256 IX. Description of the invention: [Technical field to which the invention pertains] The invention is not directed to a self-contained module that integrates active antennas into a carrier board. τ is called the axis group and its manufacturer. [Prior Art] The rapid development of wireless RF transmission technology is becoming more and more common. In theory, the length of a monopole antenna is most efficient. For example, the length of the corresponding quarter-wavelength is 3.125 coffee. Of course, the length of the antenna is much larger than the range acceptable for the miniaturized module. In order to solve this problem, the current technical design uses a group to connect short monopole antennas, thereby forming active days & and using the antenna to control the modulus of the same electrical length, and It can be adjusted by the internal variable = / Ί / 目 - g know technology, most of the integrated antenna's shot % ^ 1 (PCB) '^ (FR-4) Λ: the quality of the substrate as a module The main carrier board, and will be made, and vice versa, and then will contain the antenna control module to stick; on the table S' ^ Λ; ^ e ρ - , 疋, the carrier is purely used as a carrier and ^ For the circuit connection between the day element and the antenna pattern, the structure among the carrier board 1360256 is only used as a layered structure of the line layout. In this way, not only is the cost of the hardware circuit chip and the component two increased, but the carrier board is also considered to be able to accommodate all the circuits and smoothly perform circuit wiring, which inevitably increases the size of the carrier and the layering. Quantity. As a result, it is impossible to simultaneously satisfy the current trend for the need for a port, a large function, a small size, and a low cost. In view of the above, the technical problem to be solved by the present invention is to improve the radio frequency module and utilize the technology of the semiconductor process to integrate the active antenna into the carrier board to achieve effective Reduce the size of the entire module ^ $ purpose. And because the active antenna circuit is designed to be relatively close to each other, it is more effective to improve the power of the RF module application: In order to achieve the above object, the present invention proposes an RF module, which includes: a 矽, B Μ , . The sum of the active antennas - the main circuit, the single heart, the circuit, the circuit, the circuit, the circuit unit, the circuit, and the main semiconductor 3, the frequency is formed on the surface of the exhaust plate, and is electrically connected. Attached to the Shishi wafer carrier board frequency signal. Connecting the red-moving antenna circuit unit to process the shot in order to achieve the above object, the present invention further proposes that the antenna circuit is early, and then uses half of the lead seven, the active line = element to form, and the cymbal carrier is in the sky. ★The line circuit is integrated in the “Early ^ 6 1360256” of the stone plate, and then the main circuit unit is bonded to the surface of the active carrier circuit unit to form the surface of the electrical carrier board. The purpose, and the second (three) of this 'to achieve the application products that are reduced to different functions. s' and it is easier to set the application above (4) and connect with T to transfer - step to explain the invention for the purpose of achieving the purpose, Shi Bai is to Other objects and advantages of the present invention can be explained in the following description. [Embodiment] The present invention mainly provides a carrier for carrying each component through a conventional non-frequency module. , ^ «The board is integrated into the carrier board as a shot, thereby reducing the size of the RF module 3 and other circuit for more convenient design, and does not occupy the gate size from the ut shell. Various needs For the solution of the group, please refer to the figure - figure, which is the whole person of the invention...1 production-up. U example: the structure is not considered. As shown in the figure, the present invention provides a whole body antenna. The radio frequency module 9 includes: a U-moving circuit unit 2 and a main circuit single w ^ chip carrier board and an active antenna in the shooting health such as "the Bu Shi Xi wafer carrier board 1 is used in the shooting group 9 As a carrier for the carrier element. The dog, the ίί antenna circuit unit 2 is mainly through the - semiconductor process square ^ (4) ^ chip carrier 1 during the molding process, directly integrated into the 曰曰 。. And the further steps in the active antenna circuit unit 2 include: a ,ί, 2 ί)1, an amplifier circuit 202, and a matching circuit. among them,
發-射頻訊號。而放晶片載板1之表面’以進行收 ^ φ φ ^ 大态電路202是形成於矽晶片載板J …連接天線遍路2〇1，以對該射頻訊號產生放 7 隨電路亦同樣形成於 並電性連接放大器電路2G2,用 『戰板1之中， 器電路202對該射頻訊號作用㈣的響:m放大 =電路203在實際設計上可例如選自可^電域路，匹 或兩者之組合，在此不力⑽， 頻的效果，請同時參考第二圖 1路03所進订調 應之波形示意圖。其中橫軸代表塑；頻率響 增益_，於歧過調整匹配電路^而縱轴代表 放大器電路2°2增益的情形；，進:::;) = ㈣天線迴路2G1的接收與發射之頻率。 者主電路單元3貝^是例如以表 之方式而打件黏著於矽晶片載板]夕表面黏者技術⑽） 術去，虛二H 處该射頻訊號。而熟悉此項技 -带路了Le g所指的主電路單元3並不只限定於單 5| 4 广可以包S射頻系統中所會使用到的各種控制 為或电路（如：接收器、發射Μ 間的動作方式在此便不加崎述。 ，外，在設計上，Μ路單元3所㈣㈣晶片載板 1之^鼓線迴路2Q1 _成於 可 以如第一圖所示係為同一表面，當然亦可不同表面或 不，距離’·但是為了考慮電路特性以達“隹的訊號品 貝，則選擇以較近之電路走線距離為優先。 —值得-提的是，上述主電路單元3及主動天線電路單 兀2之間的連接可例如是進一步透過—線路重佈技術 (Rechstnbution Layer，_來進行電㈣接。如此^ 來’對於整個射頻模组9而言更可 請再參考第三圖，為本發明整合^、肢積的效果。 的製造方法實施例流程圖。如圖所示，天線之射頻模組 合主動H射翻組9的㈣方本發明提供—種整 ，供所欲進行整合狀—主動天首先， 著，依據所提供的主動天線電路單元= 而進行局料⑽加產4 式來路了局，而透過半導體製程方 =;=之半導體製程可例如是由樣㈣ 步驟，包括有光學顯影、快速綱 天線3 電路之石夕晶片載板^而主動 早^❺天線迴路2Q1係例如透過半導體製程 令賴刻方式以形成於料片載板1之表面。 最^再進行黏著主電路單元3於石夕晶片載板i之表 雷ht、查口於矽晶片载板1的主動天線電路單元2進行 9連接（S3Q7) ’進而完成内嵌有小主動天線電路單 凡2的射頻模組9。 =上所述，本發明使用與以往不同設計的載板作為載 偏^結合半導體製程之技術來將主動天線電路整合於 ，以達到有效縮小整個模組的體積尺寸之目的。 矛、θ’θ本發明更能擁有下列幾項優點： 1、提幵ΐ組的電路特性：透過本發明使得主動天線 ，路=元在設計上得以與主電路單元相當靠近， 口此叱防止較長距離走線時的訊號衰減，而大幅 1360256 地提升射頻模組的電路特性。 2、 防止雜訊干擾：由於本發明的主動天線電路單元 皆已整合於矽晶片載板，因此使得天線與主電路 單元之間的走線更能進一步具有抗雜訊干擾的效 果。 3、 降低模組溫度：由於矽晶片載板具有良好的導熱 特性，因此藉由矽晶片載板作為載具可有效降低 整個射頻模組所產生的溫度。 4、 降低成本：由於已將全部的主動天線電路單元整 合於矽晶片載板之中，而矽晶片載板相對而言是 具有較大的面積範圍，因此不需使用較高階的製 程技術。而所有的主動天線電路早元在石夕晶片載 板中使用相同的較低階製程（如：〇. 5微米製程）即 可全部達成，於是可大幅地節省成本。 5、 改善天線頻寬：由於主動天線電路可藉由調整内 部匹配電路的大小（如：調整可變電感電路中電感 的大小），以控制調變天線的接收與發射頻率，達 到多頻帶工作的目的，使得天線頻寬較被動天線 尚出許多。 惟，以上所述，僅為本發明的具體實施例之詳細說明 及圖式而已，並非用以限制本發明，本發明之所有範圍應 以下述之申請專利範圍為準，任何熟悉該項技藝者在本發 明之領域内，可輕易思及之變化或修飾皆可涵蓋在以下本 案所界定之專利範圍。 【圖式簡單說明】 10 1360256 第一圖係本發明整合主動天線之射頻模組的實施例架構示 意圖， 第二圖係放大器電路增益-頻率響應之波形示意圖；及 第三圖係本發明整合主動天線之射頻模組的製造方法實施 例流程圖。 【主要元件符號說明】 珍晶片載板1 主動天線電路單元2 天線迴路201 放大器電路2 0 2 匹配電路203 主電路單元3 射頻模組ΘSend - RF signal. And the surface of the wafer carrier 1 is placed to receive the φ φ ^ large state circuit 202 is formed on the 矽 wafer carrier J ... the connection antenna traverse 2 〇 1 to generate the radio frequency signal 7 is also formed in the same circuit And electrically connected to the amplifier circuit 2G2, with the action of the RF signal in the battle board 1 (4): m amplification = the circuit 203 can be selected, for example, from the electric field, the horse or the two. The combination of the combination, here is not effective (10), the frequency effect, please also refer to the second Figure 1 Road 03 to adjust the waveform diagram. The horizontal axis represents plastic; the frequency response gain _, in the case of over-adjustment matching circuit ^ and the vertical axis represents the 2°2 gain of the amplifier circuit; , :::;) = (4) The frequency of reception and transmission of the antenna loop 2G1. The main circuit unit 3 is, for example, attached to the 矽 wafer carrier in the form of a table, and the surface signal is applied to the virtual ray. Familiar with this technology - lead the main circuit unit 3 referred to by Le g is not limited to a single 5 | 4 wide can be used in the S RF system will be used in various control circuits or circuits (such as: receiver, transmitter Μ The mode of operation is not described here. In addition, in design, the circuit unit 3 (4) (4) The drum circuit 2 of the wafer carrier 1 is formed as the same surface as shown in the first figure. Of course, it is also possible to have different surfaces or no distances. However, in order to consider the circuit characteristics to achieve the "sound signal", it is preferred to take the distance of the circuit traces with priority. - It is worth mentioning that the above main circuit unit 3 The connection between the active antenna circuit unit 2 and the active antenna circuit unit 2 can be, for example, further transmitted through a line re-wiring technique (Recstnbution Layer, _ for electrical (four) connection. So ^ for the entire RF module 9 is more please refer to The three figures are the flow chart of the embodiment of the manufacturing method of the invention, and the method of the manufacturing method of the invention. As shown in the figure, the radio frequency module of the antenna is combined with the active H-turning group 9 (fourth). The present invention provides a seeding, supply, and supply. Want to integrate - active days first, According to the provided active antenna circuit unit = the material (10) is added to the fourth mode, and the semiconductor process through the semiconductor process can be, for example, a sample (four) step, including optical development, fast antenna 3 The circuit of the circuit board and the active antenna circuit 2Q1 is formed on the surface of the chip carrier 1 by, for example, a semiconductor process. The most important way is to stick the main circuit unit 3 to the stone chip. The surface of the carrier board i is ht, and the active antenna circuit unit 2 of the carrier board 1 is connected to 9 (S3Q7)' to complete the RF module 9 embedded with the small active antenna circuit. As described, the present invention uses a carrier board of a different design from the prior art as a technology for carrying the semiconductor process to integrate the active antenna circuit to achieve the purpose of effectively reducing the size of the entire module. Spear, θ'θ It can have the following advantages: 1. Circuit characteristics of the lifting group: Through the invention, the active antenna, the road=yuan is designed to be relatively close to the main circuit unit, and the mouth is prevented from being routed at a longer distance. The signal is attenuated, and the circuit characteristics of the RF module are greatly improved by 1360256. 2. Preventing noise interference: Since the active antenna circuit unit of the present invention is integrated into the silicon carrier board, the antenna and the main circuit unit are moved. The line can further have the effect of anti-noise interference. 3. Lower the module temperature: Since the silicon wafer carrier has good thermal conductivity, the wafer carrier can be used as a carrier to effectively reduce the total RF module. 4. Cost reduction: Since all active antenna circuit units have been integrated into the 矽 wafer carrier, and the 矽 wafer carrier has a relatively large area, there is no need to use higher order process technology. All of the active antenna circuits can be fully realized in the same lower-order process (such as: 〇. 5 micron process) in the Shixi wafer carrier, so that the cost can be greatly reduced. 5. Improve antenna bandwidth: Since the active antenna circuit can adjust the size of the internal matching circuit (such as adjusting the size of the inductor in the variable inductance circuit) to control the receiving and transmitting frequency of the modulated antenna, multi-band operation can be achieved. The purpose is to make the antenna bandwidth much more than the passive antenna. However, the above description is only for the purpose of illustration and illustration of the embodiments of the present invention, and is not intended to limit the scope of the invention. Variations or modifications that may be readily conceived within the scope of the invention may be covered by the scope of the invention as defined in the following. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of an embodiment of an RF module incorporating an active antenna according to the present invention, and FIG. 2 is a waveform diagram of a gain-frequency response of an amplifier circuit; and a third diagram of the present invention integrating the active Flow chart of an embodiment of a method for manufacturing an RF module of an antenna. [Main component symbol description] Jane wafer carrier 1 Active antenna circuit unit 2 Antenna loop 201 Amplifier circuit 2 0 2 Matching circuit 203 Main circuit unit 3 RF moduleΘ