1358841 九、發明說明： 【發明所屬之技術領域】 本發明是有關於_種發光二極體（以下稱LED)的固晶 方法，且特別是有關於一種利用光阻層控制錫膏位置和量 的固晶方法。 【先前技術】1358841 IX. Description of the Invention: [Technical Field] The present invention relates to a solid crystal method for a light-emitting diode (hereinafter referred to as LED), and more particularly to a method for controlling solder paste position and amount by using a photoresist layer Solid crystal method. [Prior Art]
LED封裝之主要目的是在於確保LED晶片和支架之間 正確地連接和電性接觸，以及保護晶片不受到機械、敎、 潮澄及其他種種的外來衝擊。因此’為了使咖能有效地 散熱’ LED的支架多採用具有高導熱、導電性的材料，例 如銅：鋁等金屬，，用來將晶片固定於支架上的膠材 也多採用具有高導熱性和高導電性的物質，例如銀膠。 銀膠固晶是目前LED產業界最廣泛使用的一種固曰方 式。銀膠絲環氧樹脂巾加人―定比例的銀粉，使^ 導電性和導熱性。銀膠的熱傳係數約^ 2〇 w/m 、The main purpose of the LED package is to ensure proper connection and electrical contact between the LED chip and the holder, and to protect the wafer from mechanical, enthalpy, tidal and other external impacts. Therefore, in order to enable the coffee to effectively dissipate heat, LED brackets are often made of materials with high thermal conductivity and electrical conductivity, such as copper: aluminum, etc., and the adhesive used to fix the wafer to the bracket is also highly conductive. And highly conductive substances such as silver glue. Silver plastic solid crystal is currently the most widely used solid-state method in the LED industry. Silver plastic silk epoxy towel adds a certain proportion of silver powder to make ^ conductivity and thermal conductivity. The heat transfer coefficient of silver glue is about 2〇 w/m,
Wd範圍之間’適用於一般低功率咖的固晶製程，然 =尚功率LED中’則略嫌不足。由於當晶片通 =\元件會產生高熱，熱必須快速傳導到散熱結構， 貝壞LED a件’故需要較高熱導係數的膠材。雖然 ^銀膠中摻人較高比例的銀粉可以提高銀膠的導電與導熱 …但部也同時下降環氧樹脂的比例，造成固晶 現行固晶製程包含一點膠製程，係將二 基板上，以便將晶片固定於支架上。基於膠 ^ 的不同，不易維持_定量的 =特性 /里丹耆，由於固晶的精 5 1358841 準度約為±50微米，因此容易發生膠材外漏的現象，進而產 生LED發出的光被外漏膠材吸收的疑慮。 基於上述理由，因此需要一種新的LED固晶方法得 以使用較冋熱導性的膠材’纟具有肖高精準度的固晶方法。 【發明内容】Between the Wd range is suitable for the solid-state process of general low-power coffee, but the power in the LED is slightly insufficient. Since the heat is transmitted to the heat dissipating structure when the wafer pass =\ component, the heat must be quickly transferred to the heat dissipating structure. Although the addition of a higher proportion of silver powder in the silver paste can improve the conductivity and thermal conductivity of the silver paste, but also reduce the proportion of the epoxy resin at the same time, causing the current solid crystal curing process of the solid crystal to contain a little glue process, which is to be on the two substrates. In order to fix the wafer to the support. Depending on the glue, it is difficult to maintain _quantitative = characteristic / Ridan 耆, because the precision of the solid crystal 5 1358841 is about ± 50 microns, it is prone to leakage of the rubber, and then the light emitted by the LED is Doubts about the absorption of leaking rubber. For the above reasons, there is therefore a need for a new LED die-casting method that uses a relatively high-precision bonding material. [Summary of the Invention]
因此本發明的目的就是在提供一種發光二極體（以下 稱LED)的固晶方法，係在LED晶片上形成—光阻層，並 填入錫膏的固晶方法，用以控制填人㈣膏的勝量和厚 依照本發明"較佳實施例，其固晶方法首先為在-LED 晶片的蟲晶層-表面上形成一光阻層，稱為第一光阻層。 ^第一光阻層中填人—金屬層後，接著再形成另-層^阻 2，稱為第二光阻層。第二光阻層覆蓋在第-光阻層和金 客^上梦且圖案對齊於LED晶片切割道的圖案。隨後將錫 ^二第二光阻層的圖案中，進行回銲步驟和移除第一與 j阻層。藉由固^光阻層凹陷部分的大小可控制填入 ==::可掌提錫膏的均勻度。同時因為錫膏先 精準 因此進仃固晶製程時’不用受限於機台的 精準度，導致漏膠的問題。 ^ 本發明所揭露之實施例具有下列優點：_ 劑:光即可控制填，膏的位置與 易控制的問題現=化Γ性所導致取膠劑量不 成本與_一三：為= 的圖案對齊LED晶片切割道的圖案，所以第二光阻 1358841 曰=凹陷。P刀即對齊LED晶粒故填入的錫膏的位置和 晶粒的位置㈣’進而去除現行的ϋ晶過財移材外 漏的問題。 χ 由上述可知，應用本發明進行LED固晶製程具有控制 •貧用！與位置之優點，且因為錫膏與晶片—體成形，可 土除在將晶粒固定於支架的過程中因精準度而造成的谬材 卜漏問題，進而消弭光被吸收的疑慮。 上述内容與後續冑細描m乂說明本發明，並且進 一步解釋本發明之申請保護範圍。 【實施方式】Therefore, the object of the present invention is to provide a method for solid crystal bonding of a light-emitting diode (hereinafter referred to as LED), which is formed on a LED wafer by a photoresist layer and filled with a solder paste for controlling the filling (4) The winning amount and thickness of the paste According to the preferred embodiment of the present invention, the die bonding method first forms a photoresist layer on the surface of the silicon oxide layer of the -LED wafer, which is called a first photoresist layer. ^ After filling the metal layer in the first photoresist layer, another layer 2 is formed, which is called a second photoresist layer. The second photoresist layer covers the pattern of the first photoresist layer and the diamond and the pattern is aligned with the LED wafer dicing street. Subsequently, in the pattern of the tin-second photoresist layer, the reflow step is performed and the first and j resist layers are removed. By filling the recessed portion of the photoresist layer, the filling of the ==:: can be used to grasp the uniformity of the solder paste. At the same time, because the solder paste is accurate first, it is not limited by the precision of the machine when it enters the solid-state process, which leads to the problem of glue leakage. The embodiment disclosed by the present invention has the following advantages: _ Agent: light can control filling, the position of the paste and the problem of easy control are now Γ Γ 所 所 取 取 取 取 取 取 取 取 取 取 取 _ _ _ _ _ _ 图案 图案 图案Align the pattern of the LED wafer scribe lines, so the second photoresist 1358841 曰 = recessed. The P-knife aligns the position of the solder paste filled with the LED die and the position of the die (4)' to remove the problem of the current thinning of the crystal. χ From the above, it can be seen that the LED solid crystal process is controlled by the application of the present invention. With the advantages of position, and because the solder paste and the wafer are formed into a body, the problem of the coffin leakage caused by the precision in the process of fixing the die to the support can be removed, thereby eliminating the doubt that the light is absorbed. The above and the following are a detailed description of the present invention, and the scope of the application of the present invention is further explained. [Embodiment]
_本發明較佳實施例的製造與使用方式詳細描述如下所 不。、本發明提供創新概念並且能夠廣泛地應用在各種專業 領域。本發明較佳實施例僅用於描述本發明的製造和使用 過程中每一特定方法，然其並非用於限制本發明。而且， 在後述内容中提及一第一特徵形成於一第二特徵之上，其 中實施例可包含有：第―特徵與第二特徵係直接接觸而形 成之實施例’或者是在實施例的第一特徵和第二特徵之間 插入額外特徵，使得第一特徵不直接接觸於第二特徵。 在此描述本發明實施例的製造過程各個中間階段，每 張圖示裡各個元件皆標示上參照元件標號，須知說明書中 每個圖示皆各相關說明更為清晰明瞭，且圖示中每個：成 元件沒有依照正確尺寸和比例繪示。第i圖到第7a圖係繪 示依照本發明—較佳實施例之LED裝置的製程剖面圖。第 7B圖係繪示本發明之LED裝置組裝完成之示意圖。 7 請參照帛1圖，其績示—蟲晶層102、一藍寶石層104 和形成於磊晶層102的一表面上的多個LED 1〇6，其中藍 寶石層104位在屋晶層1〇2的另一表面上。根據本發明之 -實施例，在磊晶I 102之-表面上具有多條縱橫交錯的 切割道刚位於相鄰的LED 106之間。接著移除藍寶石層 1〇4。移除藍寶石層104的方法可採用雷射剝離（laseriift〇ff) 或研磨技術。請參照第2圖和第3圖，移除藍寶石層ι〇4 後，在磊晶層102的表面上塗上感光材料，進行一連串的 製程，例如微影製程，形成一第—光阻層2〇2。接著在第— 光阻層202圖案化後的凹陷部分填入一金屬層3〇2。 -般LED製程中’在蠢晶層上形成—光阻層，並填入 一金屬層後，隨即將光阻層去除，且切割晶片成為晶粒。 切割後的晶粒經由一點膠步驟以進行固晶製程，由點膠機 台沾取膠材，例如銀膠，點在支架或晶片的基板上，再使 曰曰片固定於支架上。基於接著劑的聚合特性的不同，不易 維持一定量的取膠量》 本發明之實施例係在完成金屬層3〇2後，再形成—第 二光阻層404對齊於磊晶層1〇2表面上的切割道1〇8，請參 照第4圖’因此第二光阻層4〇4圖案化後的凹陷部分對應 於切割後的晶粒700,在依實施例中，第二光阻層4〇4圖案 化後的凹陷部分對齊於磊晶層1〇2表面上的ledi〇6。 下一個步騾為填入錫膏於圖案化的第二光阻層404的 凹陷部分中。錫膏為一種具有高熱導性的接著劑，係由大 量具有高熱導性的金屬材料所組成’像是錫 '銀和銅等熱 導性佳的金屬，其熱傳導係數約為57w/m<t，非常適合作 為導熱的媒介。填入錫客的 A踢s的方法包含旋轉塗蓋、化學氣相 沈積法、物理氣相沈積法、篡 予孔相 法、化學電鍍法、雷镇t ，..、电極電鍍 填入錫膏後，進行— 口知（reflow)步驟’形成如第5 圖繪示之錫膏402❹根據預嗖形# 第 豫預-又形狀的不同，錫膏402也可铖 由蝕刻、研磨等製程改變形狀。 ，，二 下-個步驟為去除第—光„加和第二光阻層 矛除纽層的方法包含研磨法、化學㈣法、雷射剝 除法或以上的任意組合。請參昭 各種結構，例如在本發明圖㈣上可以形成 ^ 發明之實施例中，LED表面上可形成 夕個接觸墊602。再去，姐客 錫B 402的形狀可以根據預設形狀 的不同’加以钱刻、研磨等製程改變形狀。 曰去除第-和第二光阻層後，沿著切割道⑽切割晶片， ，晶片切割成為多個晶救雇。請參照第7A圖所示。每個 凡成之S曰粒700至少包含一蟲晶層1〇2、位於蠢晶層⑽ 的一表面上的LED106、位於蟲晶層1〇2的另-表面上的金 屬層302和其上的—踢膏4〇2。將晶& 固定在支架上 後’便完成LED固晶製程。在本發明之一實施例中，晶粒 7〇〇是固定在一散熱結構702上。 現行的LED製程需經由一點膠製程，然而在點膠製程中， X限於膠材的均勻度和聚合力大小，因此每次取膠的膠量 不盡相同。同時’因為固晶的精準度約為±50微米，容易發 生膠材外漏的現象’進而產生LED發出的光被外漏膠材吸 收的疑慮。本發明之實施例中，由於錫膏4〇2與晶粒7〇〇 體成形，不受精準度限制，因此可避免漏膠的問題。同 1358841 二：，第二光阻層4〇4的圖案和厚度，便可掌握埴 入的錫“02的位置和劑量’不受錫膏4〇2的物理或化學 =性:二因此也可應用於其他具有高熱導性的膠材。而 的儀器進2〇2 ^第二光阻層4〇4的製程可以由相同 , 卩衣作’固晶過程中可刪除點膠的步驟，因此 降低經費支出，也可簡化固晶製程。 U此了 由上述本發明較佳實_可知，剌本發明具有 握2的錫貧的位置和劑量的優點，可避免因固晶精準度 而每成的漏膠問題，並且可減少製作成本。 —雖然本發明已以-較佳實施例揭露如上，然其並非用以限 定本，明，任何熟習此技藝者’在不脫離本發明之精神和範圍 内’當可作各種之更動與潤飾，因此本發明之保護範圍當視後 附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的 '特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 第1圖到第7A圖係綠示依照本發明一較佳實施例之 LED裝置的製程剖面圖。 第7B圖係繪示本發明之LED裝置組霞完成之示意圖。 每個圖示中標示之數字和符號都對應於相關部位，除 非另行註明。所有圖示皆為使本發明實施例各個相關說明 更明顯易懂，並不依照正確尺寸、比例繪示。 主要元件符號說明】 1358841 102 ： 蟲晶層 104 ： 藍寶石層 106 ： LED 108 ： 切割道 202 ： 第一光阻層 302 ： 金屬層 402 ： 錫膏 404 ： 第二光阻層 602 ： 接觸墊 700 ： 晶粒 704 : 散熱結構The manner of manufacture and use of the preferred embodiment of the invention is described in detail below. The present invention provides innovative concepts and can be widely applied in various fields of expertise. The preferred embodiments of the present invention are only intended to describe each particular method of manufacture and use of the present invention, and are not intended to limit the invention. Moreover, in the following description, a first feature is formed on a second feature, wherein the embodiment may include an embodiment in which the first feature is directly in contact with the second feature, or is in the embodiment. Additional features are inserted between the first feature and the second feature such that the first feature does not directly contact the second feature. The various intermediate stages of the manufacturing process of the embodiments of the present invention are described herein. Each of the components in the drawings is labeled with reference numerals, and each of the descriptions in the specification is more clearly described, and each of the illustrations is : The components are not drawn according to the correct size and scale. Figures i through 7a are cross-sectional views showing the process of the LED device in accordance with the preferred embodiment of the present invention. Fig. 7B is a schematic view showing the completion of assembly of the LED device of the present invention. 7 Referring to FIG. 1 , the performance is a worm layer 102 , a sapphire layer 104 and a plurality of LEDs 1 〇 6 formed on a surface of the epitaxial layer 102 , wherein the sapphire layer 104 is located in the roof layer 1 〇 On the other surface of 2. In accordance with an embodiment of the present invention, a plurality of criss-crossing dicing streets on the surface of epitaxial I 102 are located between adjacent LEDs 106. Then remove the sapphire layer 1〇4. The method of removing the sapphire layer 104 may employ laser stripping (laserift) or grinding techniques. Referring to FIG. 2 and FIG. 3, after the sapphire layer ι 4 is removed, a photosensitive material is applied on the surface of the epitaxial layer 102, and a series of processes, such as a lithography process, is performed to form a first photoresist layer. 2. Then, a recessed portion patterned by the first photoresist layer 202 is filled with a metal layer 3〇2. In the general LED process, a photoresist layer is formed on the stray layer and filled with a metal layer, and then the photoresist layer is removed, and the wafer is diced into crystal grains. The diced die is subjected to a solid-state process through a glue step, and a glue material, such as silver glue, is applied from the dispensing machine, and is placed on the substrate of the holder or the wafer, and then the cymbal is fixed on the support. Depending on the polymerization characteristics of the adhesive, it is difficult to maintain a certain amount of glue. The embodiment of the present invention is formed after the completion of the metal layer 3〇2, and the second photoresist layer 404 is aligned with the epitaxial layer 1〇2. The dicing street 1 〇 8 on the surface, please refer to FIG. 4 'so that the recessed portion patterned by the second photoresist layer 4 〇 4 corresponds to the diced die 700, in the embodiment, the second photoresist layer The recessed portion after the patterning of 4〇4 is aligned with the ledi〇6 on the surface of the epitaxial layer 1〇2. The next step is to fill the solder paste into the recessed portion of the patterned second photoresist layer 404. Solder paste is a kind of adhesive with high thermal conductivity, which is composed of a large number of metal materials with high thermal conductivity, such as tin, silver and copper. Its thermal conductivity is about 57w/m<t, Ideal for use as a medium for thermal conduction. The method of filling the tin passenger's A kick s includes spin coating, chemical vapor deposition, physical vapor deposition, 篡 孔 pore phase method, chemical plating method, Leizhen t, .., electrode plating after filling the solder paste The reflow step is performed to form a solder paste 402 as shown in FIG. 5, and the solder paste 402 may be changed in shape by etching, polishing, or the like according to the shape of the pre-form. , the second step - the step of removing the first light and adding the second photoresist layer to the new layer includes a grinding method, a chemical (four) method, a laser stripping method, or any combination of the above. For example, in the embodiment of the invention (4), an embodiment of the invention may be formed, and a contact pad 602 may be formed on the surface of the LED. Further, the shape of the sister B 402 may be engraved and ground according to different preset shapes. The process changes shape. 曰 After removing the first and second photoresist layers, the wafer is cut along the dicing street (10), and the wafer is cut into a plurality of crystal salvage. Please refer to Figure 7A. The particle 700 comprises at least a worm layer 1, 2 LEDs on a surface of the stray layer (10), a metal layer 302 on the other surface of the worm layer 1 〇 2, and a sponge 4 〇 2 thereon. After the crystal & is fixed on the support, the LED solid crystal process is completed. In an embodiment of the invention, the die 7 is fixed on a heat dissipation structure 702. The current LED process requires a little glue. Process, however, in the dispensing process, X is limited to the uniformity of the rubber and the size of the polymerization Therefore, the amount of glue for each glue is not the same. At the same time, because the accuracy of the solid crystal is about ±50 μm, the phenomenon of leakage of the rubber material is likely to occur, which in turn causes the light emitted by the LED to be absorbed by the leaked rubber. In the embodiment of the present invention, since the solder paste 4〇2 and the die 7 are formed into a body, which is not limited by the accuracy, the problem of the glue leakage can be avoided. The same as the 1353841 2: the second photoresist layer 4〇4 With the pattern and thickness, it is possible to grasp the physical position or dose of the tin "02" from the physical or chemical properties of the solder paste 4:2, so it can also be applied to other adhesive materials with high thermal conductivity. The process of entering the second photoresist layer 4〇4 of the instrument can be the same, and the step of removing the glue can be deleted during the “solidification process”, thereby reducing the expenditure and simplifying the solid crystal process. U. From the above preferred embodiment of the present invention, the present invention has the advantages of the position and the dose of the tin-poor of the grip 2, which avoids the problem of leakage of glue due to the precision of the solid crystal, and can reduce the manufacturing cost. The present invention has been disclosed in the above-described preferred embodiments, and it is not intended to limit the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious, the detailed description of the drawings is as follows: FIGS. 1 through 7A are green in accordance with the present invention. A process cross-sectional view of a preferred embodiment of an LED device. Fig. 7B is a schematic view showing the completion of the LED device group of the present invention. The numbers and symbols indicated in each figure correspond to the relevant parts unless otherwise stated. The illustrations of the present invention are more obvious and easy to understand, and are not drawn according to the correct size and scale. Main component symbol description] 1358841 102 : worm layer 104 : sapphire layer 106 : LED 108 : dicing street 202 : first photoresist layer 302 : metal layer 402 : solder paste 404 : second photoresist layer 602 : contact pad 700 : Die 704 : heat dissipation structure