TWI358447B - - Google Patents

Description

1358447 IX. Description of the Invention: [Technical Field] The present invention relates to a conductive liquid crystal material, a bean liquid, a liquid crystal composition of the conductive liquid crystal material, and the use of the foregoing conductive material. The liquid crystal sheep conductor element of the liquid 2 material, or even the information recording medium using the liquid crystal composition described above, is excellent in electrical conductivity when the threshold value is lower than about 5 volts in the room temperature field, and even the impedance which occurs depending on the applied voltage The change in value is not only steep in the vicinity of the voltage of φ 5 volts but also has a characteristic of better charge mobility. [Prior Art] In recent years, research on organic electroluminescence devices using organic materials is actively being carried out for a hole transport material or a charge transport material constituting an electroluminescence device. Among them, the charge transporting material is known as a derivative, a hydrazine derivative, a saliva derivative, a styrene derivative, a knee derivative, a diamine compound, a poly-n-ethylene oxazole or an oxadiazole compound. . The liquid crystal compound is used as a display material in various machines, for example, for use in a clock, an electronic computer, a bootable television, a personal computer, a mobile phone, and the like. In the liquid crystal material, its 4θ /it a. ▲ kg & phase transfer method can be divided into hot-type liquid daily (temperature transfer type liquid helium - 曰彳. + #) and / valley-type liquid crystal ( Concentration-transfer type liquid helium day) This type of liquid crystal is arranged according to the molecular formula, and the formula C can be a smectic liquid crystal, a nematic liquid corona and a cholesteric liquid crystal. ^ # ^ ^ ·. Liquid day is also called anisotropic liquid, which means that it can be sampled with the first-axis crystal of the first school. The parallel light polarimeter observation system is an observation between the normal perpendicular intersecting mirrors. This observation is useful for the identification of liquid crystals 7〇82-7478rPF; Ahddub^1358447 or the determination of the liquid crystal phase transition temperature. The smectic liquid crystal is further classified into A, B, C, D, E, F, G, etc. by a complex inflection optical pattern. Pina et al. propose that a liquid crystal compound having a liquid crystal phase as a smectic phase has charge transporting energy, and such a liquid crystal compound is used as a charge transporting material. For example, a liquid crystalline charge transporting material having a smectic liquid crystal property and having a reduction potential relative to a standard reference electrode (SCE) of -〇·3 to -〇·6 (dual mercury electrode potential (Vvs. SEC)) is proposed ( In the liquid crystal compound which exhibits a self-aligned smectic phase, a liquid crystal charge transport material having a sensitized fullerene C70 is mixed in a predetermined amount (see Patent Document 2). A liquid crystalline charge transport material-dispersed polymer film which is a smectic liquid crystal compound (see Patent Document 3) and a liquid crystal charge transport material including a mixture containing a smectic liquid crystal compound (see Patent Document 4), a liquid crystal charge transporting material having a smectic liquid crystal property and an electron mobility or a hole mobility speed of 1×10 〇1 cm/volt sec ((10) 2/v. ^ or more (refer to Patent Document 5) The present invention includes a smectic liquid crystal having a functional group which forms a new intermolecular or intramolecular bonding in one molecule, and a functional group having a hole and a V or electron charge transporting property: a liquid crystalline charge transporting material of a compound (Please refer to Patent Document 6) and the like. The smectic liquid crystal compound proposed in the above description has a benzene ring, a pyridine ring, a pyrimidine ring, a pyridazine ring, u 6; an electron-based scented naphthalene%, a 5%, and a benzo Bite ring, mouth lead and thiazole ring 'benzo-salt ring, stupid and spider's clothes and pyridine ring., isoquinoline. · hydrazine, quinazoline ring, quinoxaline ring and so on A smectic liquid crystal compound such as an aromatic ring such as scented phenanthrene or phenanthrene ring, 7082-7478-PF or Ahddub 1358447, such as onion, is used for charge transport in the smectic a phase liquid crystal state. However, the above charge transport method must be The conductivity of photoexcitation and not being photoexcited is i〇Ma sec/min (3/(8), which is a value in the field of insulator compared to the conductivity of 1 〇, /cm after photoexcitation. B. The inventor previously In order to solve such a problem, a stilbene compound having a specific structure in which a liquid crystal phase is a smectic phase is proposed as a liquid crystal compound which does not require photoexcitation and is more excellent in conductivity (for example, refer to Patent Documents 7 to 1). Further, an organic electroluminescence device using the aforementioned distyryl compound is also proposed. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 [Patent Document 4] Japanese Patent Laid-Open Publication No. [Patent Document 5] 曰本本 尽 尽 利 10 10 10 10 10 10 10 10 10 10 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 本 本Kaiping Π-209761. [Patent Document 7] 曰太直南丨杜ββ Patent No. 200 1-351 786.

[Patent Document 8] 曰太直刹 I Patent Special Publication No. 2004-6271 [Patent Document 9] National 々 々 pq 哲. PCT Publication No. 2004/085360 [Patent Document 10] International Public η Beer U a Kai 2nd 4/〇 85359 [Patent Document 11] 曰太直4ir Patent Open 2004-31 1 Publication No. 182 [Summary of the Invention] [Problems to be Solved by the Invention] 7082-7478-PF; Ahddub However, there are still some problems with regard to electrical conductivity in the room temperature field. As a result of intensive studies to solve such a problem, the inventors of the present invention have a liquid crystal composition composed of two or more components having a liquid crystal phase as a smectic phase, and the m 1 component or the two components or more are specific to the above- As shown in the general formula (1), even the liquid crystal composition of the long chain-shaped diphenylethylene derivative can effectively enhance the smectic phase molecular arrangement memory, and in the state of returning to the room temperature domain, the smectic phase molecular arrangement can be almost It is completely maintained in a solid state. • Even the inventors of the present invention can use this smectic phase molecular arrangement to be almost completely protected. In the case of (four)-like (four) substances, a conductive liquid crystal material can be obtained, which can be about 5 volts in the 7-page domain. Low voltage, can effectively improve the conductivity without light excitation, and the change of the impedance value according to the applied voltage. 'There is not only the steep current density standing near the voltage of about 5 volts, but also the better charge mobility. The characteristics are obtained to complete the present invention. That is, the present invention provides a conductive liquid crystal material, a method for producing the same, a liquid crystal composition for the conductive liquid crystal material, or even a liquid crystal semiconductor device using a conductive liquid crystal material, and a method of fabricating the same More than the Beixun recording media, in order to obtain the impedance value of the conductivity when the threshold value is lower than 5 volts in the room temperature field, even according to the applied voltage, there is not only a steep current near the voltage of about 5 volts. The rise of density also has characteristics such as better charge mobility. [Means for Solving the Problem] The present invention provides a conductive liquid crystal material according to the first aspect of the invention, which comprises a composition of 7082-7478-PF, Ahddub® 1358447, and a liquid crystal phase which is a smectic phase. In the liquid crystal composition, the 'component 1 or 2' or more is selected from the group consisting of the following diphenyl sulfonium organisms represented by the general formula (1) and the liquid crystal composition exhibits a solid state resulting from phase transfer from the smectic phase. :

CH=CH-CH=CH—R2 (1) wherein R and R2 represent a straight or branched alkyl or a burnt oxygen group, and R1 and the same group or a hetero group. The present invention provides a method for producing a conductive liquid crystal material according to the second aspect of the invention, characterized in that, in the smectic liquid crystal state temperature range, the bismuth component or the two components or more is selected from the general formula (1). The liquid crystal composition having a liquid crystal phase of a smectic phase t 2 or more is heat-treated, and then cooled. The present invention provides a liquid crystal composition according to a third aspect of the invention, which is characterized in that the liquid crystal phase is composed of two or more components having a smectic phase, and one component or two components or more are selected from the above general formula. (1) Two shown: derivatives. The present invention provides a conductive liquid crystal material according to the first invention of the fourth aspect of the present invention. The present invention provides the information recording medium according to the fifth aspect of the invention, which is directed to the liquid crystal composition of the third invention. π刚[Effect of the invention] The liquid crystal of the present invention has the property of maintaining insulation. Further, according to 7042-7478-PF; Ahddub 1358447, according to the treatment of the liquid crystal composition, the wind travels The conductive liquid crystal material of the present invention not only has a low voltage of about volts in the room temperature field, but also has better conductivity than that of the untreated portion of 10 million pieces, and is also applied according to the applied The impedance value generated by the voltage is a servant. The change in the vicinity of the voltage of about 5 volts not only has a steep current density rise but also a characteristic of better charge mobility. = conductive liquid crystal (four), for example, after the steaming (four) plate is not heated

There is a difference between the electrical and mechanical parts of the I-knife between the heat-treated parts. The conductivity is more than 1 million times the difference in conductivity. This is the use of the above-mentioned lightning-promoting S from the 4th liquid sa material such as Μ ^ 4 The memory element is used in the case of the Luo-plated substrate without the twisting treatment. Qiuhe Pangu t"., the processing of the mouth-knife 5 knife and the heat-treated portion of the liquid crystal molecules arranged optically poor, + π 6 It is useful for a hidden element, or an organic electroluminescent element or a thin film transistor element. [Embodiment] Hereinafter, the present invention will be described by taking a preferred embodiment as an example. The conductive liquid crystal material of the present invention comprises a liquid crystal composition comprising two or more knives having a liquid crystal phase of a smectic phase, wherein the component or the two components or more is a diphenyl group selected from the following general formula (1). A female derivative, and the former liquid crystal composition exhibits a solid state resulting from phase transfer from the smectic phase. And having the structure of the conductive liquid crystal material of the present invention, it is possible to obtain a conductivity 隹 at a low voltage of a threshold voltage of about 5 volts in a room temperature region, or even a change in impedance value depending on an applied voltage, at a voltage of about 5 volts. In addition, there are not only the standpoint of steep current density, but also the characteristics of better charge mobility. 7082-7478-PF; Ahddub 10 1358447

CH=CH-1 sub-cHecHO^2 The above-mentioned general formula (1) shows that R1 and R2 in the biological formula of R2 and R2 are linear or branched, and are straight or strong. Dendritic alkoxy group. The above-mentioned alkyl group is preferably a substance having a carbon number of 3 "" to 20. Specific examples of the alkyl group are a butyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a dodecyl group, a pentadecyl group, an octadecyl group and the like. In particular, the branched alkyl group is a general formula of CH3-(CH2)x-CH(CH3)-(CH2)y-CH2- (wherein γ θ ns 7 , an integer of X 疋 0 to 7 , y is 〇 When the alkyl group is represented by an integer of 7, it is possible to use, for example, the solubility of the solvent in various solvents. The alkoxy group is preferably a (tetra)oxy group represented by the formula m, wherein η is an integer of from 3 to 20. In particular, the branched alkoxy group is a general formula CH3-(CH2)x-CH(CH3)-(CH2)y-CH2-〇- (the formula is an integer from 〇 to 7, and y is an integer from 0 to 7 When the alkoxy group is shown, the solubility to various solvents can be improved. In the stilbene derivative represented by the above general formula (1), R1 & R2 may be the same group or a hetero group. Further, the diphenylethene derivative represented by the above general formula (1) may be a cis or trans form, or a mixture of the two. The stilbene derivative represented by the above formula (丨) used in the conductive liquid crystal material of the present invention can be produced, for example, by a reaction of the following reaction formula (1) or a reaction of the following reaction formula (2). . According to the following reaction formula (1), it is advantageous to produce a stilbene derivative having the same group of R1 and R2 in the formula of the stilbene derivative represented by the above formula, and on the other hand, according to the following reaction formula ( 2) 'It is advantageous to produce a stilbene derivative having the above-mentioned general formula (1) represented by diphenoethyl 11 7082-7478 'PF; and Ahddub % 1358447 olefin derivative wherein R1 and R2 are dissimilar groups. Reaction formula (1)

Alkali

Heating Iodine In the formula, R^R^R2, R1 and R2 are synonymous with the foregoing.

Heating iodine

In the W trans form, R1 and R2 are synonymous with the foregoing. B. represents a methyl group, a B, a group, a phenyl group 12 7082-7478-PF; an early organic group such as Ahddub 8 1358447, and x represents a halogen atom such as a gas or a desert. The above reaction formula (specifically, the reaction of hydrazine is bis-diphenyl bis(di-/yl bromide-filled κ compound (3)), relative to xylene bis(triphenyl = .. phosphorus) (compound (3)) The above benzamidine derivative (compound (7)) and 2 to 4 times Mohr (1D〇le), preferably 2 to 25 times Mohr, and relative to xylene di(triphenylphosphonium bromide) (compound) (3)) is a base such as 1 15 5 moles, preferably 3.5 to 4.5 times moles of alkoxide, dissolved in an alcohol solvent such as methanol or ethanol, and is taken at K0 degrees to 1 degree Celsius. The degree, preferably from 2 degrees Celsius to 50 degrees Celsius, 'reaction time · 5 hours to 5 hours, preferably 5 hours to deduction hours' to obtain the stilbene derivative (compound (formula) of the above general formula (1) 1-1)) (Please refer to Japanese Laid-Open Patent Publication No. 2004-6271 and International Publication No. 2004/085360.) On the other hand, the reaction of the above reaction formula (2) specifically, the aforementioned The support (compound (4)), relative to the benzide derivative (compound U)) is 1 to 3 times moles, preferably from ! to 15 times moles of the aforementioned scale salt (chemical compound (5)) and relative to The methylidene derivative (compound (4)) is an alcoholic solvent such as a solution of 4 to 3 moles of moles, preferably 2 to 3 times moles of alkoxide, dissolved in methanol, such as ethanol, at a temperature of 2:00 ° C to 50 ° C The degree, preferably from _5 ° C to 25 ° C, is carried out for 1 hour to 2 hours, preferably 5 hours to 15 hours, to obtain the stilbene derivative (compound (formula) of the above general formula (1) 1-2)) (Please refer to International Publication No. 2004/0.85359). Even in the above reaction formula (1) or reaction formula (2), the obtained stilbene derivative (compound 彳^) , dip)), dissolved in the presence of iodine in a solvent, by heat treatment to selectively obtain the above stilbene-derived 7082-7478-PF; Ahddub 13 XJJ044 / pass Λ M-2)) trans In this case, the amount of addition of 1 to = stupid vinyl material (compound (Bu 1, 1 '2)) 〇. _, 尔, preferably 〇.. 5 to ..01 times Moore The heat treatment temperature is from 100 degrees Celsius to 10 degrees Celsius, preferably 30 degrees Celsius ^ 50 degrees. Also, the solvent used at this time can also be used, such as stupid, toluene, o-di-f-benzene, For the di-f-benzene, the p-f-benzene, the chlorobenzene, the o-dichlorobenzene, the m-dichlorobenzene, the p-dichlorobenzene, or the like, the solvent or the above-mentioned solvent may be used. The component other than the stilbene derivative represented by the above general formula (丨) is, for example, a liquid crystal compound having a long straight chain conjugated moiety represented by the following general formula (6 &) to (60).

Rr

Rr R3- R3- •A-

-A m A—C=C- A—N=N- A-CH=N- (6 a) A_ (6 b) m A-R4 (6 c) m A—(6d) m R3—A-CH =NAN=CH~a-R4 (6e) R3—AN=CH-A—CH=NA—^R4 (6 i) wherein m is an integer of 1 to 3. Having the aforementioned general formula (6a) to), the long straight chain conjugated moiety 7082-7478-PF; Ahddub 14

(R3 and R4 in the liquid crystal compound formula of D 1358447 are a linear or branched alkyl group, a linear or branched alkoxy group. The alkyl group is preferably a carbon number of 3. The substance of 20. Specific examples of the alkyl group are butyl 'hexyl, heptyl, octyl, decyl' fluorenyl, dodecyl, pentadecyl, octadecyl, etc. In particular, branched alkyl When the group is an alkyl group represented by the general formula CH3-(CH2)x-CH(CH3)-(CH2)y-CH2- (wherein X is an integer of 0 to 7, and y is an integer of 〇 to 7), The solubility in various solvents is improved. The alkoxy group is preferably an alkoxy group represented by the general formula φ CnH2n + 10 - wherein η is an integer of 3 to 20. In particular, the branched alkoxy group is generally匸113-(〇112)*-(:11((^3)-((^2)丫-(^2-〇-(where X is an integer from 〇 to 7 and y is 0 to 7) When the alkoxy group represented by the integer is used, the solubility in various solvents can be improved. Further, the A system in the formula is a group of the following general formulas (7) to (?i).

In the liquid crystal compound having the long straight chain conjugated moiety represented by the above general formulas (6a) to (6f), 'Ra and I' may be the same group or a hetero group. Further, the liquid crystal compound having the long straight chain conjugated moiety represented by the above general formulas (6a) to (6f) may be a cis or a trans form, or a mixture of the two. The conductive liquid crystal material of the present invention is a material containing the above-mentioned general formula (1), 7082-7478-PF, and Ahddub 15 8:ethylene derivative 2 or more, particularly from the viewpoint of obtaining a highly conductive substance. In this case, the combination of the above general formula (1) and the stupid ethylene derivative having different lengths of the alkyl group may be any compound having two or more components having a length of the base chain and having a carbon number of 3 to 18. The combination. Further, in the present invention, in the case where the base chain of the hospital is a gas-burning group, it means a general formula of CnH2n+, and a ruthenium-alkoxy group is used to make a portion of the alkyl group of "Cl~. In the conductive liquid crystal material of the present invention, Preferably, the liquid crystal composition is an alkyl group having a carbon number of 12 to 18 selected from the formula of the stilbene derivative represented by the above general formula (1) or a general formula CH (wherein η is 12 to 18) The alkylene derivative (α) of the alkoxy group shown by the above formula, and the ri and R 2 selected from the formula of the stilbene derivative represented by the above general formula (1) are a carbon number of 6 to 11. Or a composition of a nonylethylene derivative (8) such as an alkoxy group represented by a general formula CH (an integer of u 6 to U in the formula). In the conductive liquid crystal material of the present invention, the liquid crystal composition exhibits a smectic liquid crystal phase. The temperature range is ... 〇. degrees to 25 degrees Celsius, preferably degrees Celsius to 250 degrees Celsius, at least about 1 degree Celsius, better than about 13 degrees Celsius. Sexuality, even from the point of view of obtaining a highly conductive substance in the room temperature field, The composition of the crystal composition is prepared in an arbitrary mixing ratio to obtain the above-mentioned liquid crystal composition such that the temperature range in which the smectic liquid crystal phase is displayed is from m to C 25 ° C, preferably from i3 G to 7 ° C. 82-7478-PF; Ahddub 16 1358447 The "matching ratio" will be different due to the use of the second game of the Eve Street creature, such as one of the preferred combinations of the present invention, the previous (1) and R2 a stilbene derivative of a C-alkoxy group: a styrene derivative (4)' and a diphenylethene street organism of the above formula (1) in the form of a CIO-alkoxy group as a diphenylethene derivative (8) The 'stilbene derivative (8) is 0.9 to 1.1 Å, preferably 卜, relative to the aforementioned stilbene molar ratio.

The conductive liquid crystal material of the present invention is a liquid crystal composition composed of two or more components having a liquid crystal phase which is a smectic phase, and one or two or more components are selected from the group consisting of diphenylethene derivatives represented by the general formula (1). The composition contains the stilbene derivative in an amount of at least 3 重量% by weight, preferably 5 Å. More preferably, the weight percentage is more than 9% by weight, and the stilbene derivative is a smectic liquid crystal phase. The liquid crystal composition of the conductive liquid crystal material of the present invention can be reacted in addition to the above. Enhance the various features needed to include other ingredients. Other components which may be contained are, for example, other liquid crystal compounds, electron donating substances, electron accepting substances, luminescent materials, and the like. The liquid crystal composition of the present invention can be obtained by the following method. In other words, one or two or more of the predetermined components and the other essential components of the above-described general formula (1) are dissolved in a solvent, and then heated or decompressed. The solvent may be removed, and one of the above-mentioned general formula (1) stilbene derivatives may be mixed with one or two or more predetermined components and other necessary components, and then heated and melted, or Return, vacuum evaporation, oblique vacuum steaming and forging and payment. The liquid crystal of the conductive liquid crystal material of the present invention is preferably prepared by vacuum evaporation or oblique vacuum evaporation. In this way, since the film state is relatively thick during vapor deposition, the film obtained by vapor deposition can be rearranged by the heat treatment method. Therefore, once the liquid crystal composition is subjected to heat treatment, the smectic liquid crystal state is compared with other The liquid crystal molecules obtained by the method further enhance the memory of the smectic phase molecular arrangement, and can be almost completely maintained in a solid state when the smectic phase molecules are arranged in the home temperature domain. Further, when the liquid crystal composition of the present invention is formed in a layered manner on a predetermined substrate, one or two or more kinds of predetermined components of the stilbene derivative represented by the above general formula (丨) may be used. The essential component is dissolved in a solvent and then formed into a layered form by a coating method such as printing, dip coating or spin coating. In this case, the production of the organic film can be made not only easy but also advantageous for industrial production. Further, the printing method is, for example, a sputum screening printing method, an inkjet printing method, or the like, but is not limited thereto. The addition of the liquid crystal composition composed of the above specific components to the conductive liquid crystal material of the present invention is an important requirement for obtaining a solid state which is caused by phase transfer from the smectic phase. Here, the solid state refers to a crystal phase, a glassy bear, and an amorphous solid which are produced by heating the smectic phase obtained by the treatment of the liquid crystal composition and then cooling the temperature. The smectic phase temperature obtained by heat-treating the liquid crystal composition is a smectic liquid crystal phase range represented by the liquid crystal composition itself, and the liquid crystal composition used in the conductive liquid crystal material of the present invention is known as The preferred temperature range of the B liquid crystal phase is from 100 degrees Celsius to 250 degrees Celsius, so the temperature range for heating the liquid crystal composition is from 100 degrees Celsius to 7082-7478-PF; Ahddub 18 1358447 250 degrees, preferably From the viewpoint of 13 degrees Celsius to 25 degrees Celsius and particularly from the viewpoint of obtaining a material having high conductivity in a room temperature region, the temperature treatment is preferably 13 degrees Celsius to 18 G Celsius. There is also a heating place, such as the time and the like, which need not be particularly limited, and may be completed from 1 minute to 60 minutes, preferably from _ 1 minute to 10 minutes. Further, the temperature drop rate is not particularly limited, and may be a rapid cooling rate in the solid state in which the smectic phase molecules are aligned and maintained in addition to the rapid cooling portion and the natural cooling. The present invention relates to a conductive liquid crystal material which is obtained by heat-treating and lowering the liquid crystal composition in an appropriate temperature range, and using a liquid crystal composition composed of the specific component described above, not only has the liquid crystal composition itself kept insulated The characteristics of the properties, as well as the liquid crystal composition described above, can further enhance the memory of the arrangement of the smectic molecules of the liquid crystal molecules. Such a liquid crystal composition exhibiting a solid state resulting from phase transfer of the smectic phase can be almost completely maintained in a solid state in the state of the room temperature domain. Because of this, in the room temperature field (2 degrees Celsius to 3 degrees Celsius), the threshold value of the electric house is about 5 volts, and it is found that it is better than the 耒 treatment department * 1 million times or more. Good conductivity, as well as changes in the impedance value that occur depending on the applied electrical waste, 纟5 volts or so near the power not only has a steep current density rise, but also has better charge mobility and other characteristics. In the conductive liquid crystal material of the present invention, for example, the difference between the heat-treated portion and the heat-treated portion after the vapor-deposited substrate is different from that of the heat-treated portion, and the conductivity is different. . The crystal material, the material of the material: the body, after the steaming of the substrate is not heat-treated part and the heat treatment of 7082-7478-PF; Ahddub 19 1358447 part of the liquid crystal molecules between the optically poor recording medium, or organic electro It is useful for a light-emitting element (EL element) or a thin film transistor element. Next, a liquid crystal semiconductor device according to a fourth invention of the present invention will be described. The liquid crystal semiconductor device of the present invention is a liquid crystal semiconductor device using the above-described conductive liquid crystal material, and the liquid crystal semiconductor device is particularly suitable for an organic electroluminescence device (EL device), a thin film transistor device, or an organic device having a thin film transistor device. Photoluminescent element. • Hereinafter, the liquid crystal semiconductor device of the present invention will be described with reference to the drawings. Fig. 1 to Fig. 4 are schematic views showing a liquid crystal semiconductor device according to a preferred embodiment of the present invention. In the τ of the first drawing, the anode 2, the buffer layer 3, the conductive liquid crystal layer 4, and the cathode 5 are sequentially laminated on the transparent substrate i. This component is especially suitable for use with 裨 electroluminescent components. The substrate 1 is usually a glass substrate used in a general organic electroluminescence device. Since the anode 2 needs to take out necessary light, a material having a large work function in the transparent material, for example, an indium tin oxide film is preferable. The cathode 5 is a metal having a small work function, e.g., formed of a film of aluminum, calcium, a fluorinated clock, a town or an alloy thereof. Since the conductive liquid crystal material 4 of the present invention uses the conductive liquid crystal material of the present invention, since the stilbene derivative itself has cyan luminescence, the conductive liquid 曰a layer 4 has a function as a light-emitting layer or a carrier transport layer. In this case, a small amount of the luminescent material may be further added in the range of maintaining the phase transition from the smectic phase of the conductive liquid crystal material to a solid state. The luminescent materials used are, for example, stilbene derivatives, triphenylamine derivatives, diamine carbazole derivatives, benzothiazole derivatives, benzoxazole derivatives, aromatic 7082-7478-PF; Ahddub 20 1358447 An amine derivative, an acridone compound, a bismuth compound, an oxadiazole derivative, a coumarin compound, an anthracene derivative, a D c M 丨 丨 laser, a oscillating dye, various metal complexes, Low molecular fluorescent pigment or polymer fluorescent material. In the liquid crystal semiconductor device of the present invention, the conductive liquid crystal layer 4 is formed in the room temperature region (5 degrees Celsius to 4 degrees Celsius) or after individual vacuum evaporation or oblique vacuum evaporation of the components of the liquid crystal composition. Under a gas atmosphere of φ inert gas such as nitrogen gas, argon gas or helium gas, it is obtained by applying a heating alignment treatment in a temperature range of the smectic liquid crystal state of the liquid crystal composition. The buffer layer 3 is provided as needed for the purpose of reducing energy barriers injected from the holes of the anode 2, for example, using copper phthalocyanine, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid ( PED〇T_pss) or other aniline, star amine, oxidized, oxidized, oxidized nail, oxidized, amorphous carbon, polyaniline, polybenzaldehyde derivatives, and the like. Further, it may be provided for the purpose of electron injection on the cathode 5 side. Fig. 2 is a schematic view showing an element which is an organic electroluminescence element (EL element) which is a preferred embodiment of the liquid crystal semiconductor device of the present invention. This element is formed by sequentially laminating the anode 2, the buffer layer 3, the conductive liquid crystal layer 4, the organic light-emitting layer 6, and the cathode 5 on the transparent substrate 1, and this figure and the figure! The difference in the embodiment of the figure is that the light-emitting layer 6 is not a conductive liquid crystal layer, and the light-emitting layer 6 is a conventional organic light-emitting material such as a diphenylethylene derivative, a triphenylamine derivative, or a diamine flavor. , benzoxanthene derivative, benzoxanthene derivative, diamine derivative, (iv) (tetra) compound, extension compound, oxadiazole derivative, coumarin compound, hydrazine derivative, 〇7082- 7478-PF; Ahddub 1358447 CM-1 and other laser oscillation dyes, various metal complexes, low molecular weight dyes or polymer fluorescent materials, etc. * The conductive liquid crystal layer 4 in the preferred embodiment is used in this embodiment. Inventive conductive liquid crystal material, and further, the conductive liquid crystal layer 4 is in the room temperature field (5 degrees Celsius to 40 degrees Celsius) or after individual vacuum evaporation or oblique vacuum evaporation of the components of the liquid crystal composition, An inert gas atmosphere such as nitrogen, argon or helium is obtained by applying a heating alignment treatment in the temperature range of the smectic liquid crystal of the liquid crystal composition. In this case, the main function of the conductive liquid crystal layer 4 is as a carrier. Transport layer Compared with the conventional amorphous organic compound, the conductive liquid crystal layer 4 can obtain a reduced driving voltage by a higher carrier injection efficiency because of a higher carrier transportability. In the organic electroluminescence device, the thickness of the conductive liquid crystal layer 4 can be arbitrarily designed in the range of 100 nm to 1 μm. Fig. 3 is a view showing that the device is a liquid crystal semiconductor device using the present invention. A schematic diagram of a thin film transistor device of a preferred embodiment of the invention. This thin film transistor (hereinafter referred to as "TFT") is attached to the substrate! The source electrode 8 and the gate electrode 8 are formed by opposing the closed-pole 7 in an opposite manner to form an electric field effect type TFT. Further, the insulating film 1 is formed to cover the gate electrode 7 and is located outside the insulating layer 1且. A channel portion u for energizing the source electrode 8 and the drain electrode 9. As the substrate i, an insulating material such as an inorganic material such as glass or an alumina sintered body, a polyimide film, a polyester film, a vinyl film, a polyphenylene sulfide film, or a p-f-benzene film is used. The gate 7 is made of an organic material such as polyaniline or polythiophene, a metal such as gold, platinum, rhenium, ruthenium, ruthenium, ruthenium, or ruthenium, an alloy of the above metal, a polycrystalline stone, and an amorphous stone. Kicking oxidized 7082-7478-PF; Ahddub 22 1358447 and m _ oxide. Insulation 臈1〇 is an organic material coated with 'organic materials used for polychloroplatin, polyethylene terephthalate: polycondensation T, polygas bake, polyethylene dioxide , cyanoethyl polytriglucose, polymethyl f-propionic acid vinegar, polycode, polycarbonate, poly-imine and the like. The source 8 and the immersed 9 are made of gold, a transparent conductive film (such as copper tin oxide or indium zinc oxide). Further, the channel portion u uses the conductive liquid crystal material of the present invention, and the channel portion u is in the room temperature field (5 degrees Celsius to 4 degrees Celsius) or before the individual vacuum steaming or the oblique vacuum steaming After the respective components, an inert gas such as m, chlorine or gas is obtained by applying a heating alignment treatment in a temperature range of the smectic liquid crystal state of the liquid crystal composition. It is also possible to use a desired electron accepting substance or an electron donating substance in combination to emphasize the p-type or n-type property. The channel portion u composed of the conductive liquid crystal material can control the amount of holes or the amount of electrons inside the channel portion i i by the electric field ' from the gate 7, and provides a function as a switching element. Further, the material of the insulating film 1A is, for example, a polyimide liquid crystal layer formed by using a polyimide after the polishing treatment is applied, whereby the alignment of the conductive liquid crystal layer can be further improved. Thereby, the operating voltage of the TFT can be lowered or operated at a high speed. Further, the polishing direction of the polishing treatment is preferably a direction perpendicular to the direction of the current flow path between the source 8 and the drain 9 (e.g., the direction in which the centers are connected). Thereby, the liquid crystal compound side key portion having the long straight key common structure and the structural part is arranged at right angles to the source current and the drain current flow path, and since the conjugate core portion is closely aligned, the carrier transportability can be greatly increased. The conductivity of a semiconductor such as germanium is obtained. 23 ^082-1418'PF; Ahddub 1358447 Fig. 4 is a continuation of the element - preferably m, the invention of the liquid crystal semiconductor device surface structure r: film transistor element of the organic electroluminescent element profile structure diagram . Top: Workpiece = 舆: Electromechanical-induced "piece-avoiding-substrate 1 1 into a TFT as a cross-cut element. This TFT uses the aforementioned thin flag electric. The employee only uses the electromechanical to generate the "piece body, On the substrate! Upper, the L door is formed by opposing the interposed poles 7. The channel portion n is formed/conducted, and the channel portion is formed by using the above-mentioned conductive liquid helium material. The pixel-type pixel driving is used, and the closed pole 7 and the source δ are respectively connected to the x and y signal lines, and the poles 9 and The organic electroluminescent element-side pole (for example, an anode) is connected. - When the conductive liquid crystal material of the channel port 1 is used as the conductive material of the conductive liquid crystal layer 4 of the organic electroluminescent element body, The channel η and the conductive liquid crystal layer 4 may be integrally formed. Thereby, in the organic electroluminescence device of the bulk molding method, since the element body om is simultaneously formed, the manufacturing cost can be further reduced. The conductive liquid crystal material of the conductive liquid crystal layer 4 is in the chamber. The temperature field (5 degrees Celsius to 4 degrees Celsius) or the individual vacuum evaporation or the oblique vacuum evaporation of the components of the liquid crystal composition, after nitrogen, The argon gas and the gas-gas-specific inert gas atmosphere are obtained by applying a heat alignment treatment in the temperature range of the liquid crystal smectic liquid crystal of the composition of the day S. Pre-existing The crystal, the group 'the object' is not superimposed on the vapor-deposited substrate; the insulation between the heat-treated portion and the heat-treated portion is \(10)0 7082-74 78-PF; Ahddub 24 is more than 1358447 times the conductivity difference, which can be used for The recording medium using the liquid crystal composition is a recording medium in which the liquid crystal molecules are not optically aligned between the heat-treated portion and the heat-treated portion after the vapor-deposited substrate. In this case, the film composed of the liquid crystal composition of the present invention on the substrate is irradiated with laser light, and the smectic liquid crystal state of the selectively irradiated portion is used to perform data recording using poor conductivity or optical difference. Here, the above-mentioned data record can also use a point where either conductivity or optical anisotropy is different. Fig. 8 is a schematic view showing the application of the liquid crystal composition of the present invention to a card embedded in a 1C wafer as a data recording medium. Fig. 9 is a view showing a part of various card substrates (a) starting from a credit card. In the room temperature field, the components of the liquid cation composition of the present invention are simultaneously or separately obtained by a vacuum evaporation method, an oblique vacuum evaporation method, or a printing, dipping coating method, a spin coating method, or the like. A film (b) formed by one of the coating methods. Further, after the protective film (c) for lamination is used on the film (b), the laser film (c) is irradiated from the protective film (c), and the heat treatment is selected. From the point (e) of the smectic liquid crystal state formed on the film (8) and the point of the insulating state (the data is recorded), as shown in Fig. 9, the film (b) is shown as highly conductive. The point of the smectic liquid crystal state of the optical and anisotropic enthalpy (〇 and the point (f) of the near-elected liquid crystal state showing low conductivity and two optical anisotropies, memory data. In the case of memorizing data by the difference in conductivity, the electrodes can be arranged at points (e) and (f). Also, the reading of the data recorded in the film (b) can be performed by means of a contact type The difference in the readability of the read can be read by the non-contact type scan, and the difference of the directionality can be read by the non-contact type scan, the damage of the smectic liquid. The state is reversible, and when it is cooled from the liquid state, it can be scrambled by the vibration given by the ultrasonic wave. Arranged to be in a state of low conductivity and low loyalty to anisotropy, and then irradiated with a laser spot to selectively perform heat treatment, and can be memorized again. The information recording medium of the present invention can also be applied to, for example, a 1C tag. Or various cards, etc. [Examples] Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited thereto. Example 1 <Synthesis Example 1; Diphenylethylene derivative (A) &gt; I 4_ Synthesis of bis(4'-pentadecyl styrene)benzene-(E,E) (1) Preparation of pentadecylbenzaldehyde

OHC·—〇μ_〇Η + CH3(CH2)i4Br + KOH ~~〇HC-hQ—0(CH2)i4CH3 Using a 100 ml four-necked flask, 85 wt% of hydroxide is 2.79 g (42 The concentration of 3 mM molars was suspended in 3 mM of dimethylformamide, and then kept at 20 ° C., and dropped into the hydroxybenzamide 5.28 g (43. 2 mmol) Methyl decylamine 1 〇 ml. Thereafter, the reaction was carried out at 30 ° C for 1 hour. Next, add 9.58 g of bromide pentadecane (32.9, millimolar concentration) at 7: Torr. Reaction > 21 '. hour after the water dispersion reaction solution After the benzene was washed with water, 11.03 g of a viscous liquid having a concentration of 7 082-7478'-PF and Ahddub 26 1358447 was obtained. Then, recrystallization treatment was carried out in hexane to obtain 8.91 g of p-dodecylbenzaldehyde (purity of 98.3%). (2) Preparation of a mixture of i,4-di(4'-pentadecyloxy)-benzene isomers (compound (7)) 〇HC~O~0陶mCH3 + (Ph)|-CH2- Q-CH2-P%3

NaOMe ” • . ch3(^14〇_Q_ch=ch-^)^ch=ch-hQ^〇(ch2)mc^ ' (7) Using a 30 ml four-necked flask, the above-mentioned synthesized pair of fifteen 7.87 g of oxyphenylfurfural (2.37 mmol) and 8.65 g of palladium (triphenylphosphonium bromide) (1·〇mmol concentration) suspended in methanol 1 〇〇10, then At room temperature (25 ° C), drop in 28 parts by weight of methanolate 6. 87 g (3 5 · 6 mmol). After that, the temperature was refluxed to 65 ° C. The reaction should be 3 hours. 200 ml of water was added to the residue, and after stirring, the precipitate was filtered, and the precipitate was further washed with water and acetone, and dried to obtain 1,4-bis(4'-deca-oxystyrene) benzene. Structure Mixture (Compound (7)) 7.49 g.. - · (Confirmation) . . . H-NMR; 7.45 ppm (4H, s), 7. 42 (4H, d), 7. 06 (2H, d ), 6.94(&gt;2fl-,d), 6.88(4H,d), 3, 9^6(43⁄4 t)v Κ7,&amp;4ΦΕ,ιη), 1.2-1.5(48H,ffl),0.87(6H , t) - * . 7〇82-7478-PF; Ahddub .27 1358447 (3) 1'4-bis(4'-pentadecyloxy)-benzene (E, E) is prepared in 100 ml Four mouthfuls In the bottle, the above synthesized ruthenium, 4-di*(tetradecyloxyethenyl)benzene isomer mixture 7.49 g (10.2 mmol) and iodine 20 mg (〇. 08 mmol) Suspension in 50 ml of p-xylene and reaction at 13 9 ° C for 8 hours. After the reaction is over, the solution is dried, and then dried to obtain 1,4-bis(4'-pentadecylstyrene)benzene. E, e) 7. 〇 6 g (purity is 999 percent). Call (confirmation data) 'H-NMR; 7.45 ppm (4H, s), 7.42 (4H, d), 7.06 (2H, d), 6.94(2H,d), 6.88(4H,d), 3.96(4H,t), 1.78(4H,m), 1. 2-1. 5(48H, id), 0. 87(6H , t). <Synthesis Example 2; stilbene derivative (B)&gt; Synthesis of 1,4-bis(4'-nonyloxystyrene)benzene-(e, E) In addition to the above Synthesis Example 1 1-Bromide pentadecane is brominated by decyl bromide. The remaining conditions and reaction operating system are the same as in Synthesis Example 1, and 1,4-bis (4,-) represented by the following general formula (8) is obtained.癸 苯乙烯 styrene) benzene _ (E, E) 3. 43 grams (purity of 99. 9). cH3(CH2)9〇__^y_CHhCH_^y_CH=CH^Q_〇陶(4) (1) — (confirmed) ^-NMR ; ^ 7. 45ppm(4H,s), 7.43(4H,d), 7· 〇6(2H,d), 6.94(2H,d), 6.87(4H,d), 3. 98(4H, t), 1. 77(4H,m), 7082-7478-PF;Ahddub 28 1358447 1.2 - ί. 5 (28H, m), 0_88 (6H, t) and the diphenyl obtained in Synthesis Example 2, as shown in the following Table 1, the liquid crystal phase structure of the ethylene derivative of the above Synthesis Example 1 by a polarizing microscope Observed and found phase transfer" Table 1

Synthesis Example Synthesis Example 2 C 98 士b domain child m ---------|-«j \ w ✓ 138 SmG 17〇__SmF 226 SmC 308 jgg_J87^ SmF 250 SmC 255 phase 310 270 Note) C . , crystal, SmG: smectic G phase, SmF: smectic F phase, SmC: smectic C phase, Μ: nematic phase, i: isotropic liquid Example 1 (1-1) - size 2 mm A glass substrate having a thickness of 2 mm and a thickness of 7 mm was mounted in a vacuum evaporation apparatus, and 40 mg of a molar ratio sample such as the stilbene derivative obtained in the above Synthesis Example i and Synthesis Example 2 was placed in the sample. The dish is 'and' installed in the steaming device. The distance between the substrate and the sample is set to ^m?? at room temperature (25 degrees Celsius), the gasification state is confirmed from the vacuum gauge, and the real steam is added. After the completion of the steaming of the bell, nitrogen gas was introduced as a desiccant, and the gas pressure was conducted back to the atmosphere to obtain a film containing the liquid crystal composition. Next, the substrate was heated by a heat treatment apparatus for 3 minutes at 15 degrees, and then naturally cooled to obtain a conductive liquid crystal film (film thickness: 300 nm), which was examined by a polarizing microscope. As a result of the observation of the light-transmitting liquid crystal film, the transmitted light was observed, and it was confirmed that the conductive liquid crystal film was at a room temperature for the base plate, and the water was aligned (please refer to the fifth figure). The distyrene derivative (A) obtained in the synthesis example and the styrene derivative (B) obtained in the synthesis example 2 alone were observed only when the distyrene derivative (A) and the single 7082-7478-PF; Ahddub 29 1358447 were observed. It was confirmed that the horizontal alignment of the substrate by Synthesis Example 1 and Synthesis Example 2 was poor. Further, the film phase transition containing the liquid crystal composition (Synthesis Example 1 + Synthesis Example 2) is shown in Table 2.

- Phase transfer rc) Liquid crystal composition C 90 SmG 120 SmF 210 SmC 225 N 231 I Note) C: Crystal, smG: smectic G phase, SmF: smectic F phase, SmC: smectic C phase, N: nematic Phase:; [: isotropic liquid. (1-2) Using a forging method, a thickness of 16 形成 is formed on a glass substrate (symbol 第 of Fig. 1) having a size of 2 mm χ 2 mm and a thickness of 〇. 7 mm. Indium tin oxide film of nano (symbol 2 of Figure 1). Forming poly(3,4-ethylenedioxythiophene polystyrenesulfonate=EDOT-PSS) by spin coating on an indium tin oxide film, and disposing an unnecessary portion of the substrate with isopropanol After removal, heat treatment is carried out for 3 minutes at 15 degrees Celsius to harden (3,ethylenedioxythiophene)-polystyrenesulfonic acid to obtain (3,4-ethylenedioxythiophene). - Polystyrene sulfonic acid layer. (The film thickness is 〇1 μm, symbol 3 of the figure) 〇 Next, the substrate is mounted in a vacuum evaporation apparatus, and the above-mentioned Example 1 and Synthesis Example 2 are used.夕_野7, one of the components, such as the ethylene derivative, and other molar ratios, 4.0 mg, were placed in the sample φ, λα a*, j.» Baozhong and women's clothing in the evaporation apparatus. The distance between the substrate and the sample was 15 cm. At room temperature (25 degrees Celsius), the gasification state was confirmed from the vacuum (5), and after the true beam was passed, the nitrogen gas was introduced into the column 7〇82-7478-PF; Ahddub 30 1358447 As a desiccant, and the air pressure is returned to the DAG (4) "Using the substrate heat treatment device to perform the Celsius on the steamed substrate" 5 〇 〇 〇 q q q q 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 3 〇 3 3 3 3 3 3 3 3 The daily liquid layer of the liquid (the film thickness is 300 nm, the symbol 4 of the figure!). The Xiang vacuum steaming material of the genus forms the cathode of the genus of the genus (the symbol of Figure 1). The thickness of the cathode is i00 ♦. 2 degrees 25 ° C. 'Measure the current of each element under each of the four (4) heat treatment structures at 3 ° C (5) degrees as shown in Fig. 6 '200 ° C 3 The result of the heat treatment structure in which the rim is a clock is as shown in Fig. 7). Further, the component was fabricated in the same manner except that the conductive liquid crystal layer prepared in Example i was not heat-treated. The results of the current quantities of the respective voltages are combined and described in Figures 6 and 7. From Figure 6 and Figure 7. As can be seen from the results of the graph, the conductive liquid crystal material of the present invention has better conductivity at room temperature (25 degrees Celsius) and a low voltage of about 5 volts, and also has no heat treatment. The liquid crystal cast product of the present invention has the property of maintaining the insulating property, and the heat-treated portion is increased by about 10,000 times or more than the unheated portion, and the resistance value changes depending on the applied voltage. The heat-treated part has a sharp current density near the voltage of about 5 volts. There is also a 'fluorescence spectrum of 70 pieces. The result of observation in a dark place, the greedy blue glow is observed" &quot; ί (1-3) 31 7082-7478-PF; Ahddub 1358447 will have a gold-made drain electrode (symbol 9 of Figure 3) and a source electrode (symbol 8 of Figure 3) and a gate electrode of 矽(The symbol in Fig. 3 is a base # plate, and 40 mg of a molar ratio sample such as a stilbene derivative obtained in the above-mentioned synthesis example i and synthesis example 2 placed in a sample dish, and is attached to the vapor deposition apparatus obliquely. Medium. The distance between the substrate and the sample is 15 cm. At room temperature (25 degrees Celsius), the gasification state is confirmed from the vacuum gauge, and then the oblique vacuum evaporation is performed. After the vapor deposition is completed, nitrogen gas is introduced as a desiccant, and the gas pressure is returned to the atmospheric pressure. The processing device heats the vapor-deposited substrate for 3 minutes at a temperature of 15 minutes, and then naturally cools to form a favorable conductive liquid crystal layer (symbol 11 of Fig. 3). (1-4) Synthesis Example 1 and The diphenylethene derivative obtained in Synthesis Example 2 was mixed in a molar ratio of 1:1, and the charge transport characteristics (movability) of the obtained liquid crystal composition were measured using a time-of-flight (Time_〇f_Fii Young T〇F) method. Measurement) 'Measure the speed of charge movement at various temperatures. The results are shown in Table 3. The measurement conditions are that the electrode material is an anode cathode, respectively, indium tin oxide, the distance between the electrodes is 9 micrometers, and the electrode area is. .16 square centimeters, the illumination wavelength is 3.37 nanometers.

From the results of Table 3, it can be seen that the temperature of the present invention is close to room temperature, and the order between the liquid crystal molecules is maintained and held, because it is close to 7082-7478-PF; Ahddub 32 1358447 has less molecular motion at room temperature, so The liquid crystal intermolecular order can be fixed, and the charge mobility and charge transport of the hybrid conductive liquid crystal material of the present invention are compared with the conventional organic semiconductor material at a temperature close to room temperature. Large amount. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a cross-sectional structure of an organic electroluminescence device which is a preferred embodiment of a liquid crystal semiconductor device of the present invention. Fig. 2 is a schematic view showing a cross-sectional structure of an organic electroluminescence device which is a preferred embodiment of the liquid crystal semiconductor device of the present invention. Fig. 3 is a schematic view showing the cross-sectional structure of a thin film transistor element which is a preferred embodiment of the liquid crystal semiconductor device of the present invention. Fig. 4 is a schematic view showing the cross-sectional structure of an organic electroluminescence device having a thin film transistor element, which is a preferred embodiment of the liquid crystal semiconductor device of the present invention. Figure 5 is a view showing that the liquid crystal composition of the present invention is subjected to heat treatment at 15 ° C for 3 minutes, and then naturally cooled to room temperature (Celsius), and the solid state is horizontally aligned with respect to the molecular arrangement of the substrate. The obtained polarized light microscope image ^. Fig. 6 is a graph showing the voltage-current amount of the liquid crystal composition of the liquid crystal composition which was prepared by the conductive liquid crystal material gas (the heat treatment was performed at 150 ° C for 3 minutes) and the heat treatment was not applied. relation chart. Figure 7 is a diagram showing the voltage-current of the composition of the conductive liquid crystal material (heat treatment at 200 °C for 3 minutes) and the liquid crystal 7082-7478-PF without heat treatment; Ahddub 33 1358447 composition prepared in Example 1. The quantity is off. Figure 8 is a schematic view showing the information recording medium of a preferred embodiment 1 of the liquid crystal composition of the present invention. Fig. 9 is a view showing heat treatment of a film composed of the liquid crystal composition of the present invention by laser light. To form a pattern of points.

[Main component symbol description] 1~ 'Substrate 1 2~ Anode; 3~ 'Buffer layer; 4 Conductive liquid crystal layer; 5~•Cathode; 6~ Light-emitting layer; 7~ Gate; 8~ Source, 9~' Nothing; 10^ ~ insulating film; 1L · ~ channel part; a ~ 'card substrate, b ~ film; c ~ protective film; d ~ laser light; e ~ smectic liquid crystal state point; f ~ insulating state point . _· 7082-7478-PF; Ahddub 34

Claims (1)

1358447 No. 094137645, the scope of application for patents: / The date of the revision of the G-day correction of the October 1st, 100th revision of the replacement page. 1. A conductive liquid crystal material characterized by having a liquid crystal phase as a smectic phase 2 In the liquid crystal composition having the above composition, the two or more components are selected from the stilbene derivative represented by the following general formula (1), and the liquid crystal composition exhibits a solid state resulting from phase transfer from the smectic phase. The aforementioned liquid crystal composition comprises: The stilbene derivative (A) 'has a stilbene derivative represented by the following formula (1), wherein R and R 2 are a linear or branched alkyl group having a carbon number of 12 to 18 or a general formula Uh (wherein, n is an integer of 12 to 18) a chain or branched alkoxy group (R1 and R2 are the same or different groups); and a stilbene derivative (Β) having the following formula (1) a stilbene derivative, wherein R1 and R2 are a linear or branched alkyl group having a carbon number of 6 to &quot; or a chain of -CnL10- (in the formula, an integer) Or branched alkoxy groups (R1 and R2 are the same or different bases) 2. The conductive liquid crystal material according to claim 2, wherein the liquid crystal composition comprises the above-mentioned &lt;(1)$ethylene derivative, wherein R and R2 are a general formula CnH2n+i〇_(wherein , η is an integer) of a chain or branched alkoxydiphenyl ethylene derivative (a) (where ri and K2 are the same or different); and the stilbene derivative represented by the above formula (1) Wherein R1 and R2 are a bond or a branched alkoxydiphenyl derivative of the general formula CnIl2n (in the formula, "an integer of 6") (Ri 7082-7478-PF1 35 135844^_37645 100 1 〇 ] ] 曰 曰 曰 曰 曰 曰 曰 曰 导电 导电 导电 导电 导电 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. 3. The phase temperature range is from 100 degrees Celsius to 250 degrees Celsius. 4. The conductive liquid crystal material according to claim 1, wherein the liquid crystal composition is obtained by vacuum evaporation, orthorhombic vacuum evaporation, or selected from dissolving the liquid crystal composition in a solvent. A layer formed by one of coating methods such as printing, dip coating, spin coating, and the like. 5. The conductive liquid crystal material according to claim 2, wherein the solid state generated by the phase transition from the smectic phase is 1 degree Celsius to 25 degrees Celsius for the liquid crystal composition. Substance that is cooled after heat treatment. A method for producing a conductive liquid crystal material according to claim 1, wherein the method for producing a conductive liquid crystal material according to claim 1 is characterized in that: in the temperature range of the smectic liquid crystal state, the second stupid ethylene derivative is contained The liquid crystal composition having a liquid crystal phase and a smectic phase is subjected to heat treatment, and then the temperature is lowered. A liquid crystal composition characterized in that the liquid crystal composition comprises a stilbene derivative represented by the following general formula (1): wherein 1 and F are a general formula H+, 0- (wherein „12 a chain or branched alkoxydiphenylethylene derivative (A) (R, the same or a different group), and a di-ethylene derivative derived from the following general formula (1) In the formula, ^ and R2 are of the general formula (in the formula "nw~u, an integral alkoxylated diphenylethylene derivative (B) (R, R2 are the same or phase 7082-7478-PF1 36 135844) ^ ο·· No. October, 100, revised the basis of the replacement page) A liquid crystal semiconductor device using the conductive liquid crystal material according to any one of claims 1 to 5. 9. The liquid crystal semiconductor device according to claim 8, wherein the conductive liquid crystal material is inert after being vacuum-deposited or oblique vacuum-deposited in the room temperature field at the same time or individually. In a gas atmosphere, the gas liquid crystal composition is subjected to a heating alignment treatment in a temperature range of the liquid crystal composition smectic liquid crystal. The liquid crystal semiconductor element according to Item 8 or 9, wherein the liquid crystal semiconductor element is used for an electroluminescence element or a thin film transistor element. 11. An information recording medium using the liquid crystal composition as described in claim 7 of the patent application. 12. The aforementioned information recording medium in claim 11 is an object to be used. The information recording medium described in the item, which differs in optical anisotropy and memorizes the information recording medium described in Item 11, which records the data by the difference in conductivity. 13. The aforementioned information recording medium in the patent application scope To borrow objects. 14. In the above-mentioned information recording medium, the above-mentioned information recording medium uses the information recording medium described in the item, and the film composed of the night crystal composition is 7082-7478-PF1 37 1358447 No. _645 No. 100 October 3曰 Correct the object that replaces the page memory data. When the point heating method is performed by laser 7082-7478-PF1 38