TWI357159B - Method of manufacturing solar cell without removin - Google Patents

Method of manufacturing solar cell without removin Download PDF

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Publication number
TWI357159B
TWI357159B TW96148565A TW96148565A TWI357159B TW I357159 B TWI357159 B TW I357159B TW 96148565 A TW96148565 A TW 96148565A TW 96148565 A TW96148565 A TW 96148565A TW I357159 B TWI357159 B TW I357159B
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solar cell
substrate
manufacturing
vapor deposition
chemical vapor
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TW96148565A
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TW200929558A (en
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Chin Tien Yang
Ta Neng Ho
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Big Sun Energy Technology Inc
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Chemical Vapour Deposition (AREA)

Description

1357159 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種免移除摻雜材料之太陽能電池之 製造方法及使用該方法形成之太陽能電池,尤其關於一 種利用化學氣相沈積來對一基板進行摻雜並於該基板上 形成一抗反射塗層(Anti-Reflection Coating)的形成方 法。 【先前技術】 太陽能電池是一種能量轉換的光電元件,它是經由 太陽光照射後’把光的能量轉換成電能,此種光電元件 稱為太陽能電池(Solar Cell)。從物理學的角度來看,有 人稱之為光伏(Photovoltaic,簡稱PV)電池。 傳統的太陽能電池的製造方式,是先在石夕晶圓上進 行摻雜及擴散以形成氧化物。在擴散的同時,會形成鱗 石夕玻璃(Phosphate Silicon Glass,PSG)或棚構石夕玻璃1357159 IX. Description of the Invention: [Technical Field] The present invention relates to a method for manufacturing a solar cell without removing a doping material and a solar cell formed using the method, and more particularly to a method for chemical vapor deposition The substrate is doped and a method of forming an anti-reflection coating is formed on the substrate. [Prior Art] A solar cell is an energy-converting photovoltaic element that converts light energy into electrical energy after being irradiated by sunlight. This photovoltaic element is called a solar cell. From a physics point of view, some people call it Photovoltaic (PV) batteries. Conventional solar cells are fabricated by doping and diffusion on a Shihwa wafer to form an oxide. At the same time of diffusion, it will form Phosphate Silicon Glass (PSG) or shed stone glass.

(Boron Phosphate Silicon Glass,BPSG)。PSG 跟 BPSG 都是屬於製程中的副產物,所以習知技術通常有一道製 程來將PSG或BPSG移除《接著,進行常壓化學氣相沈 積(Atmospheric Pressure Chemical Vapor Deposition, APCVD)或低壓化學氣相沈積(l〇w pressure chemical Vapor Deposition ’ LPCVD),以形成氮化矽層,或形成 氧化矽、氮化矽及氮氧化矽之複合層來作為抗反射塗層 (Anti-Reflection Coating)。接著,進行傳統的網印(screen(Boron Phosphate Silicon Glass, BPSG). Both PSG and BPSG are by-products of the process, so conventional techniques usually have a process to remove PSG or BPSG. Next, Atmospheric Pressure Chemical Vapor Deposition (APCVD) or low pressure chemical gas Phase deposition (l〇w pressure chemical Vapor Deposition 'LPCVD) to form a tantalum nitride layer, or a composite layer of tantalum oxide, tantalum nitride and hafnium oxynitride is formed as an anti-reflection coating. Then, carry out the traditional screen printing (screen

Printing)的製程,以在晶圓上面形成電極的圖案。 5 1357159 然而’在前述之傳統太陽能電池的製程中,所需要 的步驟數太多,耗時較多。因此,如何降低太陽能電池 之製造方法的步驟數以節省時間及成本,實為本案所欲 解決之問題。 【發明内容】Printing) to form a pattern of electrodes on the wafer. 5 1357159 However, in the process of the conventional solar cell described above, the number of steps required is too large and time consuming. Therefore, how to reduce the number of steps in the manufacturing method of the solar cell to save time and cost is the problem to be solved in the present case. [Summary of the Invention]

因此,本發明之一個目的係提供一種免移除摻雜材 料之太陽能電池之製造方法及使用該方法形成之太陽能 電池,其中利用化學氣相沈積來對—基板進行摻雜並於 S玄基板上形成一抗反射塗層。 為達上述目的’本發明提供—種免移除摻雜材料之 太陽能電池之製造方法,包含以下步驟:提供一其板. 藉由化學氣相沈積而於基板上沈積—摻雜材料層;及烘 烤基板及摻雜材料層,以於基板中 形成一摻雜區,同時 於基板上形成一抗反射塗層。Accordingly, it is an object of the present invention to provide a method for fabricating a solar cell free of doped material and a solar cell formed using the method, wherein the substrate is doped by chemical vapor deposition and applied to the S-substrate An anti-reflective coating is formed. In order to achieve the above object, the present invention provides a method for manufacturing a solar cell without removing a doping material, comprising the steps of: providing a plate. depositing a layer of a doped material on a substrate by chemical vapor deposition; The substrate and the doped material layer are baked to form a doped region in the substrate while forming an anti-reflective coating on the substrate.

為讓本發明之上述内容能 較佳實施例,並配合所附圖式 更明顯易懂,下文特舉一 ’作詳細說明如下。 【實施方式】 圖"員示依據本發明較佳實施例之太陽能電也之 造方法之流程圖。圖2纟4顯㈣m j 之太陽能電池之製造方法之示意圏。 住貫細 請相對應地參考圖1及圖2至4 雜材料之太陽能電池之製造方法包纟發月之免移除’ 古包含以下步驟。 為了達成線上自動化生產的 政果,本實施例係以^ 1357159 送設備(譬如輸送帶”的搜 u1的傳輸方式說明整個動作流程。然In order to make the above-described embodiments of the present invention more comprehensible, and in conjunction with the accompanying drawings, FIG. [Embodiment] FIG. 1 is a flow chart showing a method of fabricating solar power according to a preferred embodiment of the present invention. Fig. 2纟4 shows a schematic diagram of a method for manufacturing a solar cell of (4) m j .住 细 细 Please refer to Figure 1 and Figures 2 to 4 for the production method of the solar cell of the miscellaneous materials. In order to achieve the success of online automated production, this embodiment illustrates the entire operation flow by means of the transmission method of the device 1 (e.g., conveyor belt).

而,亦可以使用機械年壁A 于’來達成移動基板的目的。 首先,於步驟si,袒仰 ^ 奴供一基板1〇。此基板丨〇通常 為P型石夕基板,但也可以β . 也』以疋η型矽基板。基板1 〇係被裝 設於輸送設備1上,鈥饴於..,< 址 …'後輸迗設備1將基板1 0運送至化 學氣相沈積設備2中。 接著,於步驟S2,^ 在化學氟相沈積設備2中藉由化 學氣相沈積而於基板1 〇 μ、士& ^ Αί 土傲ιυ上沈積一摻雜材料層2〇β化學 沈積所使用的材料包会f 6 4 J π 匕 3 ⑷磷矽玻璃(ph〇sphate siHc〇nAlternatively, the mechanical wall A can be used to achieve the purpose of moving the substrate. First, in step si, the slave is supplied to a substrate. The substrate 丨〇 is usually a P-type 夕 基板 substrate, but it may also be a . 矽 type 矽 substrate. The substrate 1 is mounted on the transport apparatus 1, and the substrate 1 is transported to the chemical vapor deposition apparatus 2 after the end. Next, in step S2, a chemical layer is used in the chemical fluorine phase deposition apparatus 2 to deposit a doping material layer on the substrate 1 〇μ, 士 amp ^ 土 土 傲 傲 化学 化学 化学 化学The material package will be f 6 4 J π 匕 3 (4) Phosphorus glass (ph〇sphate siHc〇n

GlaSS ’ PSG)或爛碟石夕玻璃(B〇r〇n ph〇sphate siHc〇n Gl^ BPSG) ’(b)石夕甲院(Silane);⑷氧氣;及⑷氮氣 或氨氣1此’摻雜材料層2G的材料包含财玻璃或蝴 Μ矽玻璃。这些材料都可以由一個或複數個喷嘴4來提 供至化學氣相沈積設備2之一腔室5中 於本實施例中,化學氣相沈積係為常壓化學氣相沈 積(Atmospheric Pressure Chemical Vap〇r Dep〇siti〇n, APCVD)或低壓化學氣相沈積(L〇w卜⑴阶—^GlaSS 'PSG) or rotten disc stone glass (B〇r〇n ph〇sphate siHc〇n Gl^ BPSG) '(b)Silane (Silane); (4) oxygen; and (4) nitrogen or ammonia 1 The material of the doped material layer 2G comprises a glass or a dome glass. These materials may be supplied to one chamber 5 of the chemical vapor deposition apparatus 2 by one or a plurality of nozzles 4 in the present embodiment, and the chemical vapor deposition system is atmospheric pressure chemical vapor deposition (Atmospheric Pressure Chemical Vap〇). r Dep〇siti〇n, APCVD) or low pressure chemical vapor deposition (L〇w Bu (1) order - ^

Vapor Deposition,LPCVD)。然而,本發明並未受限於 此’亦可以使用其他化學氣相沈積法。 然後,輸送設備i將基板10從化學氣相沈積設備2 中移動至一供烤設備(一般稱為爐管)3中進行烘烤步驟 S3。於步驟S3,烘烤基板10及摻雜材料層2〇,以於基 板10中形成一摻雜區12,同時於基板10上形成一抗^ 射塗層30«此烘烤步驟可以達成擴散摻雜的效果,^可 以同時形成抗反射塗層30,藉以提高太陽能電池的效率。 7 1357159 值得注意的是’為了更清楚顯示太陽能電池之結構, 基板10、輸送設備丨、化學氣相沈積設備2及烘烤設備 3並未依據實際比例繪製。 由上述所舉例的材料可知,矽曱烷與氧氣反應會產 生一氧化妙以作為介電層。矽甲烷與氮氣或氨氣反應會 產生氣氧化妙以作為抗反射塗層之主要材料。因此抗反 射塗層30係為由一氮氧化物、一氮化矽及一氧化矽所組 成之複合層,且抗反射塗層30包含有磷矽玻璃或硼磷矽 玻璃。 接著’就是進行與習知技術類似的網印製程以及後 續製程’於此不再詳述。 因此,利用本發明之製造方法所形成之太陽能電池 包含基板10及抗反射塗層30。基板10上具有摻雜區12。 抗反射塗層30位於基板1〇上,且摻雜區12鄰近抗反射 塗層30。抗反射塗層30中包含有磷矽玻璃或硼磷矽玻 璃。 综上所述,本發明之太陽能電池上包含有psG或 BPSG,省去習知技術需要移除pSG或BpSG。而且,摻 雜與抗反射塗層的形成是在同一步驟完成,可以有效簡 化生產流程及降低製造成本。 在較佳實施例之詳細說明中所提出之具體實施例僅 用以方便說明本發明之技術内容,而非將本發明狹義地 限制於上述實施例,在不超出本發明之精神及以下申請 專利範圍之情況下,所做之種種變化實施,皆屬於本發 明之範圍。 ^ 8 【圖式簡單說明】 圖1 _不依據本發明較佳f施例之太陽能電池之製 切·方法之流程圖。 圖2顯不依據本發明較佳實施例之太陽能電池之製 造方法之示意圖之一。 lg| * 顯不依據本發明較佳實施例之太陽能電池之製 ^方法之示意圖之二。Vapor Deposition, LPCVD). However, the invention is not limited to this. Other chemical vapor deposition methods can also be used. Then, the transporting apparatus i moves the substrate 10 from the chemical vapor deposition apparatus 2 to a bakeware apparatus (generally referred to as a furnace tube) 3 for baking step S3. In step S3, the substrate 10 and the doping material layer 2 are baked to form a doping region 12 in the substrate 10, and an anti-reflective coating 30 is formed on the substrate 10. The baking step can achieve diffusion doping. The effect of the impurity, ^ can simultaneously form the anti-reflective coating 30, thereby improving the efficiency of the solar cell. 7 1357159 It is worth noting that in order to more clearly show the structure of the solar cell, the substrate 10, the transport device 丨, the chemical vapor deposition device 2, and the baking device 3 are not drawn according to the actual scale. From the materials exemplified above, it is known that the reaction of decane with oxygen produces a oxidized layer as a dielectric layer. The reaction of methane with nitrogen or ammonia produces gas oxidization as the main material for anti-reflective coatings. Therefore, the anti-reflective coating 30 is a composite layer composed of a nitrogen oxide, a tantalum nitride and a niobium monoxide, and the anti-reflective coating 30 contains phosphor haze or borophosphon glass. Then, 'the screen printing process and the subsequent process similar to the prior art' are not described in detail here. Therefore, the solar cell formed by the manufacturing method of the present invention comprises the substrate 10 and the anti-reflection coating 30. The substrate 10 has a doped region 12 thereon. The anti-reflective coating 30 is on the substrate 1 and the doped region 12 is adjacent to the anti-reflective coating 30. The anti-reflective coating 30 contains phosphorous or borophosphorus glass. In summary, the solar cell of the present invention includes psG or BPSG, and the prior art requires the removal of pSG or BpSG. Moreover, the formation of the doped and anti-reflective coating is completed in the same step, which can effectively simplify the production process and reduce the manufacturing cost. The specific embodiments of the present invention are intended to be illustrative only and not to limit the invention to the above embodiments, without departing from the spirit of the invention and the following claims. In the case of the scope, various changes are made and are within the scope of the invention. ^ 8 [Simplified description of the drawings] Fig. 1 is a flow chart of a method for cutting a solar cell according to a preferred embodiment of the present invention. Fig. 2 is a schematic view showing a method of manufacturing a solar cell according to a preferred embodiment of the present invention. Lg| * A schematic diagram 2 of a method for fabricating a solar cell according to a preferred embodiment of the present invention.

4方法之示意圖之 【主要元件符號說明】 輸送設備 2 3 4 5 化學氣相沈積設備 烘烤設備 噴嘴 腔室 10 :基板4 Schematic diagram of the method [Description of main component symbols] Conveying equipment 2 3 4 5 Chemical vapor deposition equipment Baking equipment Nozzle Chamber 10 : Substrate

12 :摻雜區 2():摻雜材料層 30 :抗反射塗層12: doped region 2 (): doped material layer 30: anti-reflective coating

Sl至S3 ;方法步驟 9Sl to S3; method step 9

Claims (1)

1357159 〆 100年8月29日補充修正 十、申請專利範圍: 1· 一種免移除摻雜材料之太陽能電池之製造方 法,包含以下步驟: 提供一基板; 藉由化學氣相沈積而於該基板上沈積一摻雜材料 層;及 烘烤該基板及該摻雜材料層,以於該基板中形成一 摻雜區’同時於該基板上形成一抗反射塗層。 >2.如申請專利範圍第1項所述之免移除摻雜材料 之太陽能電池之製造方法,其中該摻雜材料層的材料包 含磷矽玻璃(Phosphate Silicon Glass,PSG)或硼磷矽玻璃 (Boron Phosphate Silicon Glass,BPSG) 〇 3. 如申請專利範圍第1項所述之免移除摻雜材料 之太陽能電池之製造方法,其中沈積該摻雜材料層所使 用的材料包含: (a)矽甲烷(Silane); | (b)氧氣;及 (c)氮氣或氨氣。 4. 如申請專利範圍第1項所述之免移除摻雜材料 之太陽能電池之製造方法,其中該化學氣相沈積使用的 材料包含: (a) 磷矽玻璃(Phosphate Silicon Glass,PSG); (b) 矽甲烷(Silane); (c) 氧氣;及 (d) 氣氣或氨氣。 1357159 100年8月29日補充修正 5. 如申請專利範圍第1項所述之免移除摻雜材料 之太陽能電池之製造方法,其中該化學氣相沈積使用的 材料包含: (a) 爛鱗石夕玻璃(Boron ph〇Sphate Silicon Glass, BPSG); (b) 矽甲烷(Silane); (c) 氧氣;及 (d) 氮氣或氨氣。 6. 如申請專利範圍第1項所述之免移除摻雜材料 之太陽能電池之製造方法,其中該化學氣相沈積係為常 壓化學氣相沈積(Atmospheric Pressure Chemical Vapor Deposition’ APCVD)或低壓化學氣相沈積(Low Pressure Chemical Vapor Deposition,LPCVD) o 7. 如申請專利範圍第1項所述之免移除摻雜材料 之太陽能電池之製造方法,其中該基板係從一化學氣相 沈積設備中移動至一烘烤設備中進行該烘烤步驟。 8. 如申請專利範圍第1項所述之太陽能電池,其 中該抗反射塗層係為由一氮氧化物、一氮化矽及一氧化 矽所組成之複合層。 9. 如申請專利範圍第1項所述之太陽能電池,其 中該抗反射塗層包含有鱗石夕玻璃(Phosphate Silicon Glass,PSG)或棚鱗石夕玻璃(Boron Phosphate Silicon Glass,BPSG)。 10. —種太陽能電池,包含: 一基板,其具有一摻雜區;及 1357159 100年8月29日補充修正 一抗反射塗層’位於該基板上’該捧雜區係鄰近該 抗反射塗層,其中該抗反射塗層中包含有鱗石夕玻璃 (Phosphate Silicon Glass,PSG)或爛碟碎玻璃(B〇ron Phosphate Silicon Glass,BPSG) 〇 11. 如申請專利範圍第l〇項所述之太陽能電池, 其中該抗反射塗層係為由一氮氧化物、一氮化矽及一氧 化矽所組成之複合層。1357159 8August 29, 100 Supplementary amendments. Patent application scope: 1. A method for manufacturing a solar cell without removing a doping material, comprising the steps of: providing a substrate; and depositing the substrate by chemical vapor deposition Depositing a doped material layer thereon; and baking the substrate and the doped material layer to form a doped region in the substrate while forming an anti-reflective coating on the substrate. <2. The method of manufacturing a solar cell without removing a doping material according to claim 1, wherein the material of the doping material layer comprises Phosphate Silicon Glass (PSG) or borophosphonium The method for manufacturing a solar cell without removing a doping material according to claim 1, wherein the material used for depositing the doping material layer comprises: ) 矽 methane (Silane); | (b) oxygen; and (c) nitrogen or ammonia. 4. The method for manufacturing a solar cell without removing a doping material according to claim 1, wherein the material used for the chemical vapor deposition comprises: (a) Phosphate Silicon Glass (PSG); (b) Silane; (c) Oxygen; and (d) Air or ammonia. 1357159 Aug. 29, 2010 Supplementary Amendment 5. The method of manufacturing a solar cell for removing a doped material according to claim 1, wherein the material used for the chemical vapor deposition comprises: (a) a scale Boran ph〇Sphate Silicon Glass (BPSG); (b) Silane; (c) Oxygen; and (d) Nitrogen or ammonia. 6. The method of manufacturing a solar cell excluding a doping material according to claim 1, wherein the chemical vapor deposition is Atmospheric Pressure Chemical Vapor Deposition (APCVD) or low pressure. The method of manufacturing a solar cell without removing a doping material according to claim 1, wherein the substrate is from a chemical vapor deposition device. Move to a baking device to perform the baking step. 8. The solar cell of claim 1, wherein the antireflective coating is a composite layer composed of a nitrogen oxide, a tantalum nitride, and hafnium oxide. 9. The solar cell of claim 1, wherein the anti-reflective coating comprises Phosphate Silicon Glass (PSG) or Boron Phosphate Silicon Glass (BPSG). 10. A solar cell comprising: a substrate having a doped region; and 1357159 supplemented with an anti-reflective coating on the substrate on August 29, 100, the adjacent region being adjacent to the anti-reflective coating a layer, wherein the anti-reflective coating comprises Phosphate Silicon Glass (PSG) or B ron Phosphate Silicon Glass (BPSG) 〇 11. As described in claim 1 The solar cell, wherein the anti-reflective coating is a composite layer composed of a nitrogen oxide, a tantalum nitride and niobium monoxide.
TW96148565A 2007-12-19 2007-12-19 Method of manufacturing solar cell without removin TWI357159B (en)

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