TWI346979B - - Google Patents
Info
- Publication number
- TWI346979B TWI346979B TW093134313A TW93134313A TWI346979B TW I346979 B TWI346979 B TW I346979B TW 093134313 A TW093134313 A TW 093134313A TW 93134313 A TW93134313 A TW 93134313A TW I346979 B TWI346979 B TW I346979B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003381583 | 2003-11-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200522200A TW200522200A (en) | 2005-07-01 |
TWI346979B true TWI346979B (en) | 2011-08-11 |
Family
ID=36642578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093134313A TW200522200A (en) | 2003-11-11 | 2004-11-10 | Radical generating method, etching method and apparatus for use in these methods |
Country Status (5)
Country | Link |
---|---|
US (1) | US7875199B2 (en) |
EP (1) | EP1687842A1 (en) |
CN (1) | CN100490087C (en) |
TW (1) | TW200522200A (en) |
WO (1) | WO2005045915A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101267220B (en) * | 2007-03-12 | 2011-07-27 | 京信通信系统(中国)有限公司 | Dual-frequency multiplexer |
US8568571B2 (en) * | 2008-05-21 | 2013-10-29 | Applied Materials, Inc. | Thin film batteries and methods for manufacturing same |
JP5709505B2 (en) * | 2010-12-15 | 2015-04-30 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, and storage medium |
JP6192060B2 (en) * | 2011-09-09 | 2017-09-06 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Multifrequency sputtering to enhance the deposition rate and growth kinetics of dielectric materials |
CN108322991A (en) * | 2018-01-08 | 2018-07-24 | 青海师范大学 | A kind of semiclosed normal pressure double frequency large area glow discharge experimental provision |
KR20210006725A (en) * | 2019-07-09 | 2021-01-19 | 삼성전자주식회사 | Sputtering apparatus and method for fabricating semiconductor device using the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4464223A (en) * | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
JPH02298024A (en) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | Reactive ion etching apparatus |
EP0777267A1 (en) * | 1995-11-28 | 1997-06-04 | Applied Materials, Inc. | Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography |
TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
JPH10242130A (en) | 1996-04-26 | 1998-09-11 | Hitachi Ltd | Plasma treating method and apparatus |
TW473857B (en) * | 1996-04-26 | 2002-01-21 | Hitachi Ltd | Method of manufacturing semiconductor device |
JPH11145118A (en) | 1997-11-06 | 1999-05-28 | Nec Corp | Method and apparatus for etching |
JP4230029B2 (en) | 1998-12-02 | 2009-02-25 | 東京エレクトロン株式会社 | Plasma processing apparatus and etching method |
JP3634734B2 (en) * | 2000-09-22 | 2005-03-30 | 株式会社日立製作所 | Plasma processing apparatus and processing method |
-
2004
- 2004-11-09 EP EP04799701A patent/EP1687842A1/en not_active Withdrawn
- 2004-11-09 US US10/578,835 patent/US7875199B2/en not_active Expired - Fee Related
- 2004-11-09 WO PCT/JP2004/016920 patent/WO2005045915A1/en active Application Filing
- 2004-11-09 CN CNB2004800330769A patent/CN100490087C/en not_active Expired - Fee Related
- 2004-11-10 TW TW093134313A patent/TW200522200A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1879200A (en) | 2006-12-13 |
TW200522200A (en) | 2005-07-01 |
CN100490087C (en) | 2009-05-20 |
EP1687842A1 (en) | 2006-08-09 |
WO2005045915A1 (en) | 2005-05-19 |
US20070131651A1 (en) | 2007-06-14 |
US7875199B2 (en) | 2011-01-25 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |