TWI346979B - - Google Patents

Info

Publication number
TWI346979B
TWI346979B TW093134313A TW93134313A TWI346979B TW I346979 B TWI346979 B TW I346979B TW 093134313 A TW093134313 A TW 093134313A TW 93134313 A TW93134313 A TW 93134313A TW I346979 B TWI346979 B TW I346979B
Authority
TW
Taiwan
Application number
TW093134313A
Other languages
Chinese (zh)
Other versions
TW200522200A (en
Inventor
Goto Toshio
Hori Masaru
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200522200A publication Critical patent/TW200522200A/en
Application granted granted Critical
Publication of TWI346979B publication Critical patent/TWI346979B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control
    • H01J37/32706Polarising the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972Spectral analysis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02CCAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00Capture or disposal of greenhouse gases
    • Y02C20/30Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
TW093134313A 2003-11-11 2004-11-10 Radical generating method, etching method and apparatus for use in these methods TW200522200A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003381583 2003-11-11

Publications (2)

Publication Number Publication Date
TW200522200A TW200522200A (en) 2005-07-01
TWI346979B true TWI346979B (en) 2011-08-11

Family

ID=36642578

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093134313A TW200522200A (en) 2003-11-11 2004-11-10 Radical generating method, etching method and apparatus for use in these methods

Country Status (5)

Country Link
US (1) US7875199B2 (en)
EP (1) EP1687842A1 (en)
CN (1) CN100490087C (en)
TW (1) TW200522200A (en)
WO (1) WO2005045915A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101267220B (en) * 2007-03-12 2011-07-27 京信通信系统(中国)有限公司 Dual-frequency multiplexer
US8568571B2 (en) * 2008-05-21 2013-10-29 Applied Materials, Inc. Thin film batteries and methods for manufacturing same
JP5709505B2 (en) * 2010-12-15 2015-04-30 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing method, and storage medium
JP6192060B2 (en) * 2011-09-09 2017-09-06 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Multifrequency sputtering to enhance the deposition rate and growth kinetics of dielectric materials
CN108322991A (en) * 2018-01-08 2018-07-24 青海师范大学 A kind of semiclosed normal pressure double frequency large area glow discharge experimental provision
KR20210006725A (en) * 2019-07-09 2021-01-19 삼성전자주식회사 Sputtering apparatus and method for fabricating semiconductor device using the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPH02298024A (en) * 1989-05-12 1990-12-10 Tadahiro Omi Reactive ion etching apparatus
EP0777267A1 (en) * 1995-11-28 1997-06-04 Applied Materials, Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
TW335517B (en) * 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
JPH10242130A (en) 1996-04-26 1998-09-11 Hitachi Ltd Plasma treating method and apparatus
TW473857B (en) * 1996-04-26 2002-01-21 Hitachi Ltd Method of manufacturing semiconductor device
JPH11145118A (en) 1997-11-06 1999-05-28 Nec Corp Method and apparatus for etching
JP4230029B2 (en) 1998-12-02 2009-02-25 東京エレクトロン株式会社 Plasma processing apparatus and etching method
JP3634734B2 (en) * 2000-09-22 2005-03-30 株式会社日立製作所 Plasma processing apparatus and processing method

Also Published As

Publication number Publication date
CN1879200A (en) 2006-12-13
TW200522200A (en) 2005-07-01
CN100490087C (en) 2009-05-20
EP1687842A1 (en) 2006-08-09
WO2005045915A1 (en) 2005-05-19
US20070131651A1 (en) 2007-06-14
US7875199B2 (en) 2011-01-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees