TWI346248B - Flat transmittance modulation (tm) blank mask and photomask using the same - Google Patents

Flat transmittance modulation (tm) blank mask and photomask using the same

Info

Publication number
TWI346248B
TWI346248B TW096114679A TW96114679A TWI346248B TW I346248 B TWI346248 B TW I346248B TW 096114679 A TW096114679 A TW 096114679A TW 96114679 A TW96114679 A TW 96114679A TW I346248 B TWI346248 B TW I346248B
Authority
TW
Taiwan
Prior art keywords
photomask
same
blank mask
transmittance modulation
flat transmittance
Prior art date
Application number
TW096114679A
Other languages
Chinese (zh)
Other versions
TW200811589A (en
Inventor
Kee-Soo Nam
Han-Sun Cha
Hyoung-Jong Kang
Gi-Hun Ryu
Original Assignee
S&S Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S&S Tech Co Ltd filed Critical S&S Tech Co Ltd
Publication of TW200811589A publication Critical patent/TW200811589A/en
Application granted granted Critical
Publication of TWI346248B publication Critical patent/TWI346248B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW096114679A 2006-06-30 2007-04-25 Flat transmittance modulation (tm) blank mask and photomask using the same TWI346248B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20060060311 2006-06-30
KR20060092769 2006-09-25
KR1020070035555A KR100849849B1 (en) 2006-06-30 2007-04-11 Flat Transmittance ModulationTM Blank Mask and Photomask using the same

Publications (2)

Publication Number Publication Date
TW200811589A TW200811589A (en) 2008-03-01
TWI346248B true TWI346248B (en) 2011-08-01

Family

ID=39214585

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114679A TWI346248B (en) 2006-06-30 2007-04-25 Flat transmittance modulation (tm) blank mask and photomask using the same

Country Status (2)

Country Link
KR (1) KR100849849B1 (en)
TW (1) TWI346248B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101464230B1 (en) * 2008-01-31 2014-11-25 주식회사 에스앤에스텍 Graytone Blnkmaks, Grapytone Photomask and its manufacturing methods
KR100890411B1 (en) * 2008-05-23 2009-03-26 주식회사 에스앤에스텍 Graytone blnkmaks, grapytone photomask and its manufacturing methods
JP5219200B2 (en) * 2008-07-31 2013-06-26 Hoya株式会社 Photomask, photomask blank, photomask manufacturing method, and pattern transfer method
CN104513985A (en) * 2014-12-10 2015-04-15 金川集团股份有限公司 Nickel-chromium alloy metallographic corrosion solution and corrosion method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253590B2 (en) * 1998-08-31 2002-02-04 シャープ株式会社 Manufacturing method of halftone mask
JP4521694B2 (en) * 2004-03-09 2010-08-11 Hoya株式会社 Gray-tone mask and thin film transistor manufacturing method

Also Published As

Publication number Publication date
KR20080003206A (en) 2008-01-07
KR100849849B1 (en) 2008-08-01
TW200811589A (en) 2008-03-01

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