TWI345040B - Led package and applications of led as light source - Google Patents

Led package and applications of led as light source Download PDF

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TWI345040B
TWI345040B TW96131342A TW96131342A TWI345040B TW I345040 B TWI345040 B TW I345040B TW 96131342 A TW96131342 A TW 96131342A TW 96131342 A TW96131342 A TW 96131342A TW I345040 B TWI345040 B TW I345040B
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conductive layer
light
layer
emitting diode
semiconductor
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TW96131342A
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TW200909728A (en
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Tzong Liang Tsai
Chih Ching Cheng
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Huga Optotech Inc
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1345040 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種發光二極體(Light-Emitting Diode ; LED)之封裝結構及 其應用,特別是其中所使用的發光二極體之多層量子井(Multi Qua咖讀紐)具 ' 有較佳的發光效率者。 4 【先前技術】 由於LED的光是由内部的主動層發出並且是向任意方向發射光束,故咖 發光效率(Efficiency)是由下列方程式表示1345040 IX. Description of the Invention: [Technical Field] The present invention relates to a package structure of a light-emitting diode (LED) and an application thereof, in particular, a multilayer of a light-emitting diode used therein Quantum wells (Multi Qua coffee readings) have 'better luminous efficiency. 4 [Prior Art] Since the light of the LED is emitted by the inner active layer and emits the light beam in any direction, the luminous efficiency is expressed by the following equation

Eeff==Ei(intemal)*Ee(extemal) 其巾Ei是指由内部的主動層發出之發光效率,而Ee是指外部光摘出之發 光效率,Eeff是指整體的發光效率。 習知技術中,為了改善LED發光效率,多半集中在改善外部光摘出之發光 效率,藉以提高LED之發光效率。例如美國專利公開號1182〇〇5〇〇82562八卜美 國專利公開號US20050277218A1、美國專利公開號US2〇〇4〇1(M672、美國專利 公告號US6900473及US67777871。前述各個先前技術中,均是在LED之表面 改良,藉由形成LED外部的不規則表面(例如以虫刻技術),避免[ED的光在f • 片内部全反射,因此可提高外部光摘出之發光效率Ee。依現有之技術,Ee已達 約80%,此一結果已接近至物理極限。 【發明内容】 有赛於發明背景中所述之問題,目前LED的外部光摘出效率&已達約 80%,接近至物理極限,然而LED内部的主動層發光效率历,卻只達到4〇%左 右。而依據前述之方程式’改善内部的主動層發光效率Ei可以有效提高LED整 體發光效率Eeff。為此,申請人提出之第96襲9!號中華民國專利申請^將㈣ 之主動層形成具有複數個不規則且高低起伏之多層量子井結構(un議 MUki-Quantum-Well),使不規則的多層量子井之體面積較傳統平坦的多層量子井 5 1345040 發級率E ff’Γ 部社_發出之發光鱗K,使得整_咖之 i井因此,制前述具有複數個不規則且高低触之多歸 效能:高。' 娜成的封裝結構及顧產品,具魏高之紐,崎其使用 因此,本發明之主要目的在提供一種LED封裝結構,其中所使 =2的發光效率,藉以使封裝結構的綠形狀更佳,而使封裝結構的使用 本發明之再-目的在於提供LED為光源的背光模組,其巾所 LED具;^較南級率,而使背光模組的制效能以。 本發明之又-目的在於提供_種以LED為光源的顯示器,其中所使用的 .LED具有較高的發光效率,而使顯示㈣使用效能更高。 . 本發明之又一目的在於提供—種以led為顯示器光源的可攜式電腦,其中 所使用的LED具有較高的發光效率,而使顯示^的使肢能更高。 本發明之又-目的在於提供一種以LED為光源的投影設備,其中所使用的 LED具杨向光效率,而使投影設備的使用效能更高。 本發明之又-目的在於提供-種以LED絲源的倾職視,其中所使用 的LED具有較高的發光效率,而使背投影電視的使用效能更高。 Φ 本發明之又-目的在於提供一種以LED為光源的數位電子I置,其中所使 用的LED具雜高的發級率,而使練電子裝置的賴效能更高。 本發明之又一目的在於提供一種以LED為光源的光通訊系統,其中所使用 的LED具有較高的發光效率,而使光通訊系統的效能更高。 本發明之又一目的在於提供一種LED燈具,其中所使用的LED具有較高 的發光效率,而使燈具的效能更高。 本發明之又一目的在於提供一種以LED為光源的車用燈具,其中所使用的 LED具有較高的發光效率,而使車用燈具的效能更高。 本發明之又一目的在於提供一種以LED為光源的交通號誌燈具,其中所使 6 1345040 用的LED具有較南的發光效率,而使交通號紐具的效能更高。 本發明之又-目的在於提供__歡LED為絲的交通線祕,其中所 使用的LED具有較南的發光效率,而使交縣道指示燈的效能更高。 本發明之又-目的在於提供—種以LED為光源的交通標示裝置,其中所使 用的LED具有較⑤的發纽率,而使交通標示裝置的效能更高。 【實施方式】 由於本發縣揭露-種LED封裝結構及其,其巾所糊之咖原理, 已為相關技術領域具有通常知識者所能明瞭,故以下文中之說明,不再作完整 描述。同時’以下文中所龍之圖式,絲達與本發明特徵有關之結構示=, 並未亦不吊要依據實際尺寸完整繪製,盍先敘明。 首先請參見第-A圖’係本發明提出之第一較佳實施例,為一種藍光㈣ 封裝結構1A之剖面示意圖。藍光LED封裝結構认,包含有—承座⑴,至少 -個藍光1^11容置於承座111上、以及—封裝材料119包覆此藍光咖11。 而當藍光LED若數量較多時’亦可以各種型態的陣列方式排列,藉以提高亮度 與光均勻度。 上述的藍光1^11包括第-電極112、基板113、第一半導體導電層114、 主動層115、第二半導體導電層116、透明導電層117以及第二電極118。 基板in形成於第-電極m上方,其材料可以是藍寶石、氮化嫁(GaN)、 氮化紹(Ain)、碳化石夕(sic)、石申化鎵(GaAs)、磷化鎵(GaP)、石夕(Si)、鍺(Ge)、氧 化鋅(ZnO)、氧化鎮(MgO)、或LAO、LGO或玻璃材料等均可。 第一半導體導電層114形成於基板113上方,為一 N_Type之半導體層,其 材料為m-v族化合物半導體,其巾m族材料係可以是銘(A1)、錄㈣、或銦⑽ 等材料’而V族材料可以是氮(N)、填(P)、或砷(As)等材料。 主動層115為一具有複數個不規則且高低起伏形狀的多層量子井 (Multi-Quantum-Well) ’形成於第一半導體導電層ι14上方。 7 1345040 第-半導體導電層II6形成於主動層11S上方,為-p_Type之半導體,其 t為m-v族化合物半導體,其中111族材料係可以是華)、鎵㈣、或銦⑽ 料’而V族材料可以是氮(N)、填(P)、或石申(As)等材料,·一透明導電層117 形成於第二半導體導電層出上方,其材料可以是題„ 、NiO/Au、Ta/Au、氮 匕鶴欽(WTiN)、氮化欽(丁iN)、氧化銦錫、氧化鉻錫、氧化銻錫、氧紹、武 氧化鋅錫等材料。 取 第二電極118形成於透明導電層117上方。 特別要強_是’本發财形成具有減個不酬且高低起伏之多層量子 所形成的主動層出,是先將複數個異質材料所形成之複數個微粒隨意散佈於 半導體導電層114上,藉此成長出具有複數個不規則且高低起伏之多層量 =115。因此,在本發明的第一半導體導電層114與具有複數個不規則且^低 ==多層量子井115所形成之主動層間有至少一種異質材料存在(但未顯示於 田/ )’上述之異質材料所形成之複數個微粒,其材料可以是㈣、瓜族 私、VI族、III-V族化合物、H_v族化合物、或π νι族化合物等均可, 不同於第一半導體導電層114的異質材料即可。 ’、疋 上述實施例中,主動層U5之多層量子井係由氮化物、鱗化物、石中 或射化物等齡轉成’其所使用讀· ΙΠ·ν族化合物半賴 族材料係可岐華)、鎵(Ga)、_η胸料,__可Ν 罐材料。其中多層量子井115為每—不規則且高低起伏形 截面^比係介於約為3:1〜1:1〇之間,其表面粗财以係介於約為Μ 〜50奈米之間,其中雄度Ra值約為⑽〜奶奈米之間為較佳^ . 本發明進-步提出第二較佳實施例,為一種白光咖封裝結構,請 考弟- A圖,其賴在於材料119㈣含複數做長轉赋賴粒子_ (wave-length _erting誠⑽η物黃"練,域紅ed丨丨鋪 粉之藍光被螢光粉所散射,且部分之藍黃色螢光粉吸收⑽私 ^ 8 1345040 此’藍光與黃光因混光效果而形成白光射出。 首先請參見第-B圖,係本發明提出之第三較佳實施例,為一種藍光LED 封裝結構1B之剖面示意圖。藍光LED封裴結構1B ,包含有一承座m,至少 、一個藍光LED11容置於承座111上、以及一封裝材料119包覆此藍光led 11。 •而當藍光LED若數量較多時,亦可以各種型態的陣列方式排列,藉以提高亮度 與光均勻度。 上述的藍光LED 11包括基板113、第一半導體導電層114、第一電極112、 主動層115、第二半導體導電層116、透明導電層117以及第二電極118。 ® 基板113的材料可以是藍寶石、氮化鎵(GaN)、氮化鋁(A1N)、碳化石夕(SiC)、 石申化鎵(GaAs)、墙化鎵(GaP)、妙(Si)、錯(Ge)、氧化鋅(ZnO)、氧化鍰(MgO)、 或LAO ' LGO或玻璃材料等均可。 第一半導體導電層1丨4形成於基板113上方,為一 N-Type之半導體層,其 材料為ιπ·ν族化合物半導體,其中m族材料係可以是鋁(A1)、鎵(Ga)、或銦(In) 等材料,而V族材料可以是氮、磷(P)、或砷(As)等材料。 第一電極112形成於第一半導體層上方,並暴露於外。 主動層115’形成於第一半導體導電層114上方,具有複數個不規則且高低 I 起伏形狀的多層量子井(Multi-Quantum-Well)。 第二半導體導電層116形成於主動層115上方,為一 P-Type之半導體,其 材料為III-V族化合物半導體,其中m族材料係可以是鋁(A1)、鎵(Ga)'或銦(In) 等材料,而V族材料可以是氮(N)、磷(P)、或砷(As)等材料。 透明導電層117形成於第二半導體導電層116上方,其材料可以是Ni/Au、 Ni〇/Au、Ta/Au、氮化鎢鈦(WTiN)、氮化鈦(TiN)、氧化銦錫、氧化鉻錫、氧化 銻錫、氧化鋅鋁、或氧化鋅錫等材料。 第二電極118,形成於透明導電層117上方。 特別要強調的是’本發明中具有複數個不規則且高低起伏之多層量子井的 9 1345040 主動層115’是先將複數個異質材料所形成之複數個微粒隨意散佈於第一半導體 導電層1U上’藉此成長出具有複數個*規則且高低起伏之多層量子井出。因 ,,在本發_第-半導體導電層114與具有複數個不規則且高低起伏之多層 罝子井II5所形成之主動層間有至少一種異質材料存在(但未顯示於圖式中),上 1述之異質材料所形成之複數個微粒,其材料可以是II族' 111族、V族、VI族、 .m_v族化合物、II-V族化合物、或II-VI族化合物等均可,只要是不同於第一半 導體導電層114的異質材料即可。 ★上述實施例中之多層量子井115係由氮化物、雜物、畔化物、或新化 鱗㈣_成’細制之㈣為III_V舰合物半賴,射m族材料係 可以是維1)、錄(Ga)、或轉n)特料,❿V着料可以是_、剌、 (As)等材料。其中多層量子井115為每一不規則且高低起伏形狀之橫截面之寬高 比係介於約為3 : 1〜1 : 1G之間,其表面祕度Ra係介於約為〇.5〜50奈米 之間’其中粗糙度Ra值約為以3〇〜4〇奈米之間為較佳。 本發卿-步提出第四較佳#_,為—種白光led縣結構,請繼續參 考第- B圖,其特徵在於:封裝材料m内包含複數個波長轉換式散射粒子· 切h _eiting喊叶咖黃⑽絲,纟妓咖u發射至榮光 #粉之藍光被螢光粉所散射,且部分之藍光被黃色螢光粉吸收而以黃光射出,藉 此’藍光與黃光因混光效果而形成白光射出。 明所:,為本發明進一步提出第五較佳實施例,依據本發 或LED封裝結構,可進"步應用背光模組,此背光模組可以是 下式m且2(如第二圖)、或是側光式背光模組3(如第三圖),至少包含一具 楛人Γ:體21 °又置於開口側的光學擴散膜片22、以及設置於殼體内的光源 包含_個LED或LED封_㈤情使用的 ’ 結構之做如前述第—較佳實施例至第四較佳實補的其中任Eeff==Ei(intemal)*Ee(exemal) The towel Ei refers to the luminous efficiency emitted by the inner active layer, and Ee refers to the luminous efficiency of external light extraction, and Eeff refers to the overall luminous efficiency. In the conventional technology, in order to improve the luminous efficiency of the LED, it is mostly concentrated on improving the luminous efficiency of external light extraction, thereby improving the luminous efficiency of the LED. For example, U.S. Patent Publication No. 1 182 〇〇 62 62 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The surface modification of the LED, by forming an irregular surface outside the LED (for example, by insect engraving technology), avoids [the light of the ED is totally reflected inside the f• sheet, thereby improving the luminous efficiency Ee of the external light extraction. According to the existing technology Ee has reached about 80%, and this result is close to the physical limit. [Invention] There is a problem described in the background of the invention, and the external light extraction efficiency of the LED has reached about 80%, close to physics. The limit, however, the active layer luminous efficiency inside the LED is only about 4%. However, according to the above equation, 'improving the internal active layer luminous efficiency Ei can effectively improve the overall luminous efficiency Eeff of the LED. To this end, the applicant proposes The 96th attack on the 9th Republic of China patent application ^ will (4) the active layer to form a multi-layer quantum well structure with a plurality of irregular and high and low fluctuations (unconsidered MUki-Quantum-Well), so that The regular multi-layer quantum well has a larger area than the traditional flat multi-layer quantum well 5 1345040 E ff'Γ 社社_ emits the illuminating scale K, so that the whole _ 咖 i i, the above has a plurality of irregularities The high and low touches are attributed to high: 'Na's packaging structure and product, with Wei Gaozhi, Suzuki. Therefore, the main purpose of the present invention is to provide an LED package structure in which the luminous efficiency of =2 is utilized. The green shape of the package structure is better, and the use of the package structure is further. The purpose of the invention is to provide a backlight module with LED as a light source, and the LED of the towel has a southerly rate, and the backlight module is made. Further, another object of the present invention is to provide a display using LED as a light source, wherein the LED used has higher luminous efficiency and the display (4) is more efficient to use. Providing a portable computer with LED as a display light source, wherein the LED used has a high luminous efficiency, and the display device has a higher limb energy. The invention further aims to provide an LED as a light source. Projection The LED used therein has a light-directed light efficiency, and the use efficiency of the projection device is higher. The invention is further aimed at providing a kind of LED wire source, wherein the LED used has high luminous efficiency. Therefore, the use efficiency of the rear projection television is higher. Φ Another object of the present invention is to provide a digital electronic device using LED as a light source, wherein the LED used has a high rate of occurrence, and the electronic device is used. A further object of the present invention is to provide an optical communication system using LED as a light source, wherein the LED used has higher luminous efficiency and makes the optical communication system more efficient. It is still another object of the present invention to provide an LED lamp in which the LED used has a higher luminous efficiency and the lamp is more efficient. Another object of the present invention is to provide a vehicular lamp using LED as a light source, wherein the LED used has a high luminous efficiency, and the vehicular lamp is more efficient. Another object of the present invention is to provide a traffic light fixture using LED as a light source, wherein the LED used for the 6 1345040 has a souther luminous efficiency, and the traffic signal is more efficient. Still another object of the present invention is to provide a traffic line secret of __ Huan LED as a wire, wherein the LED used has a relatively bright luminous efficiency, and the performance of the indicator of the Jiaoxian Road is higher. Still another object of the present invention is to provide a traffic signing device that uses LEDs as a light source, wherein the LEDs used have a turn-on rate of 5, which makes the traffic signing device more efficient. [Embodiment] Since the present invention discloses a LED package structure and a method for smearing it, it has been known to those skilled in the relevant art, and therefore, the description below will not be completely described. At the same time, the structure of the dragon in the following text, the structure of the wire and the structure of the present invention is shown, and it is not drawn and it is completely drawn according to the actual size. Referring first to FIG. AA, a first preferred embodiment of the present invention is a cross-sectional view of a blue (four) package structure 1A. The blue LED package structure comprises a socket (1), at least one blue light 1^11 is placed on the socket 111, and a packaging material 119 covers the blue coffee 11. When the number of blue LEDs is large, they can be arranged in various types of arrays to improve brightness and light uniformity. The blue light 11 11 includes a first electrode 112, a substrate 113, a first semiconductor conductive layer 114, an active layer 115, a second semiconductor conductive layer 116, a transparent conductive layer 117, and a second electrode 118. The substrate in is formed over the first electrode m, and the material thereof may be sapphire, GaN, Ain, sic, GaAs, GaN. ), Shi Xi (Si), germanium (Ge), zinc oxide (ZnO), oxidized town (MgO), or LAO, LGO or glass materials. The first semiconductor conductive layer 114 is formed on the substrate 113 as an N_Type semiconductor layer, and the material thereof is a mv group compound semiconductor, and the towel m group material may be a material such as Ming (A1), recorded (four), or indium (10). The group V material may be a material such as nitrogen (N), filled (P), or arsenic (As). The active layer 115 is formed of a plurality of multi-quantum-wells (Multi-Quantum-Wells) having a plurality of irregularities and high and low undulations above the first semiconductor conductive layer ι14. 7 1345040 The first semiconductor conductive layer II6 is formed over the active layer 11S as a semiconductor of -p_Type, where t is a mv group compound semiconductor, wherein the 111 group material may be hua), gallium (tetra), or indium (10) material and the V group The material may be a material such as nitrogen (N), filled (P), or Ashen. A transparent conductive layer 117 is formed on the second semiconductor conductive layer. The material may be „, NiO/Au, Ta. /Au, 匕 匕 钦 钦 (WTiN), nitriding chin (ding iN), indium tin oxide, chromium oxide tin, antimony tin oxide, oxygen, zinc oxide zinc oxide and other materials. The second electrode 118 is formed in transparent conductive Above the layer 117. Especially strong _ is 'this rich form the formation of a multi-layer quantum with reduced weight and high and low undulations, the active layer is formed by a plurality of particles formed by a plurality of heterogeneous materials randomly scattered in the semiconductor conductive On the layer 114, a plurality of layers having irregularities and high and low undulations are grown to be 115. Therefore, the first semiconductor conductive layer 114 of the present invention has a plurality of irregularities and low == multi-layer quantum wells 115. At least one heterogeneous material exists between the active layers formed (but not The plurality of microparticles formed by the above heterogeneous material may be (4), melons, VIs, III-V compounds, H_v compounds, or π νι compounds, etc. The heterogeneous material of the first semiconductor conductive layer 114 may be used. 'In the above embodiment, the multilayer quantum well of the active layer U5 is converted from nitride, scale, stone or emitter to 'the read one used. · ΙΠ·ν 化合物 compound semi-laid material can be 岐 )), gallium (Ga), _η胸, __ 可 can can be used. Among them, the multi-layer quantum well 115 is an irregular and high-low undulating cross-section Between about 3:1 and 1:1 ,, the surface of the coarse money is between about Μ ~ 50 nm, wherein the male Ra value is about (10) ~ between the milk nano is better The present invention further proposes a second preferred embodiment, which is a white light coffee package structure, please take the test of the younger brother-A, which depends on the material 119 (four) containing a plurality of long-transfer _ particles (wave-length _erting Cheng (10) η "Yellow" & "Learning", the blue light of the red 丨丨 丨丨 powder is scattered by the fluorescent powder, and part of the blue-yellow fluorescent powder is absorbed (10) Private ^ 8 1345040 This 'blue light and yellow light are formed by white light emission due to the light mixing effect. First, please refer to FIG. 4B, which is a cross-sectional view of a blue LED package structure 1B according to a third preferred embodiment of the present invention. The blue LED sealing structure 1B includes a socket m, at least one blue LED 11 is received on the socket 111, and a packaging material 119 covers the blue LED 11. When the number of blue LEDs is large, The brightness and light uniformity can be improved by arrays of various types, and the blue LED 11 includes the substrate 113, the first semiconductor conductive layer 114, the first electrode 112, the active layer 115, the second semiconductor conductive layer 116, and the transparent layer. Conductive layer 117 and second electrode 118. The material of the substrate 113 may be sapphire, gallium nitride (GaN), aluminum nitride (A1N), carbon carbide (SiC), gallium arsenide (GaAs), gallium (GaP), m (Si), Wrong (Ge), zinc oxide (ZnO), cerium oxide (MgO), or LAO 'LGO or glass materials. The first semiconductor conductive layer 丨4 is formed over the substrate 113 as an N-type semiconductor layer, and the material thereof is an ιπ·ν group compound semiconductor, wherein the m-type material may be aluminum (Al), gallium (Ga), Or materials such as indium (In), and the group V material may be materials such as nitrogen, phosphorus (P), or arsenic (As). The first electrode 112 is formed over the first semiconductor layer and exposed to the outside. The active layer 115' is formed over the first semiconductor conductive layer 114 and has a plurality of multi-quantum-wells of irregular and high-low I-shaped shapes. The second semiconductor conductive layer 116 is formed on the active layer 115 as a P-type semiconductor, and the material thereof is a III-V compound semiconductor, wherein the m-type material may be aluminum (Al), gallium (Ga)' or indium. Materials such as (In), and the V group materials may be materials such as nitrogen (N), phosphorus (P), or arsenic (As). The transparent conductive layer 117 is formed over the second semiconductor conductive layer 116, and the material thereof may be Ni/Au, Ni〇/Au, Ta/Au, titanium tungsten nitride (WTiN), titanium nitride (TiN), indium tin oxide, Materials such as chromium oxide tin, antimony tin oxide, zinc aluminum oxide, or zinc tin oxide. The second electrode 118 is formed over the transparent conductive layer 117. In particular, the 9 1345040 active layer 115' having a plurality of irregular and high-low undulation multilayer quantum wells in the present invention is obtained by randomly dispersing a plurality of particles formed by a plurality of heterogeneous materials on the first semiconductor conductive layer 1U. On top of this, a multi-layer quantum well with a plurality of * rules and high and low fluctuations is grown. Therefore, at least one heterogeneous material exists between the active-first-semiconductor conductive layer 114 and the active layer formed by the plurality of irregular ridges II5 (but not shown in the figure), The plurality of particles formed by the heterogeneous material described in claim 1 may be a Group II 'Group 111, Group V, Group VI, .m_v group compound, Group II-V compound, or Group II-VI compound, etc. It may be a heterogeneous material different from the first semiconductor conductive layer 114. ★ The multi-layer quantum well 115 in the above embodiment is made up of nitride, impurity, product, or new scale (4) _ into 'fine (4) is III_V hull, and the mei material can be dimension 1 ), recording (Ga), or transferring n) special materials, ❿V material can be _, 剌, (As) and other materials. The multilayer quantum well 115 has an aspect ratio of each irregular and high and low undulating shape of between about 3:1~1:1G, and the surface roughness Ra is about 〇.5~ Between 50 nm, where the roughness Ra value is preferably between 3 〇 and 4 〇 nanometers. Benfa Qing-step proposes the fourth best #_, for the white light led county structure, please continue to refer to the figure - B, which is characterized in that: the package material m contains a plurality of wavelength-converting scattering particles · cut h _eiting shout Yecai Huang (10) silk, 纟妓 u u 发射 发射 发射 # # # 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉 粉The effect is to form white light. The present invention further provides a fifth preferred embodiment of the present invention. According to the present invention or the LED package structure, the backlight module can be applied in steps, and the backlight module can be of the following formula m and 2 (such as the second figure). Or an edge-lit backlight module 3 (as shown in the third figure), comprising at least one body: an optical diffusion film 22 that is placed on the open side of the body 21°, and a light source disposed in the housing _ LED or LED seal _ (five) use the 'structure as described above - the preferred embodiment to the fourth better

1J4^U4U •實施例所述 ㈣,本發步提出第六較佳實施例,依據本發明所提出之 器或是觸控^纟1,丨t _於齡器4,此_ 4可枝液晶顯示 模组(,夫考第° 凡3一面板模組41、一驅動電路模組(未圖示)與-背光 ㈣切圖),f用之光源模組包含有複數個咖或 佳實施例至結構之特徵顯一較 TCT^、^五_ ’本發明進—步提㈣七較佳實施例,依據本發明所提出之 有-i月Γ體封η構,可進一步應用可攜式電腦5,此可攜式電腦5至少包含 器與觸控顯示騎構顯㈣53 ’顯示器53選自於由液晶顯示 斤構成群組之其中之一,顯示器83至少包含—面板模組531、 之圏示)與一背光模組(請參考第二圖與第三圖),背光模纽使用 模包έ有複數個LED或LED職輯;喊情使㈣led或led =裝結構之特徵如前述第—較佳實施例至第_佳實施例的其中任-實施例所 明參見第六圖’本發明進一步提出第八較佳實施例,依據本發明所提出之 LED或LED封裝結構n步制投影設備ό,此投影設備6至少包糾 體今置於鋪内之-驅動電路裝置與__鏡戦置61,鏡頭裝置&至少包含一 光源模組6n、-透鏡模组612與隨後之聚焦模組阳,光源模組包含 W所使_ED或㈣封脑構之特徵如前 ;L 實a例至第四較佳實施例的其中任一實施例所述。 月多見第七圓本發明進一步提出第九較佳實施例,依據本發明所提出之 1345040 咖或LED封裝結構’可進一步應用背投影電視7,此背投影電視7至少包含 1體7卜設置於箱體71前端之—屏幕72、容置於箱體内之—驅動電路模植、 —投影設備73與—光學反射裝置74肋將投影設備73投射出之影像反射至屏 幕72。投影設備74包含至少一光源模組、一透鏡模組與隨後之聚焦模組,其相 對關射參考第紅私健實酬。其巾光賴域含有複數個哪 或le,封裝結構,而其中所使用的LED或㈣封裝結構之特徵如前述第一較 佳實施例至第四較佳實施例的其中任一實施例所述。 請參見第八圖,本發明進一步提出第十較佳實施例’依據本發明所提出之 LED或LED封裝結構,可進一步應用光通訊系統8,此光通訊系統8包含一光 發射模組8卜—訊號產生模組82、一光纖網路傳輸通道83及至少一光接收模 組84。其特徵在於光發射模組81包含有複數個LED或LED封裝結構,而其中 所使用的LED或LED封裝結構之特徵如前述第—較佳實施例至第四較佳實施例 的其中任一實施例所述。 凊參見第九圖,本發明進一步提出第_^_一較佳實施例,依據本發明所提出 之LED或LED封裝結構,可進一步應用燈具9,此燈具包括一殼體% ; 一電路 •基板(未圖示)’容置於殼體91内,設置有一對電極與複數個LED或LED封裝 結構;殼體91的一端具有接頭92,供可操作地結合至外部之燈具插座93,並 導通至該電路基板之一對電極。而其中所使用的LED或LED封裝結構之特徵如 月’J述第一較佳實施例至第四較佳實施例的其中任一實施例所述。 請參見第十A圖與第十B圖,本發明進一步提出第十二較佳實施例,依據 本發明所提出之LED或LED封裝結構,可進一步應用車用燈具10,此車用燈 具10至少包括一中空殼座1〇1以及設置於殼座1〇1開放窗口之一透光性燈罩 102 ’殼體内有一燈座1〇11,一電路板1〇12以及複數個LED或LED封裝結構 12 1345040 1013設置於縣1011、其情的LED或LED封裝結構之舰如前述第 一較佳貫施例至第四較佳實施例的其中任一實施例所述。 請參見第十-圖’本發魏-步提出第十三較佳實施例,依據本發明所提 出之LED《LED封裴結構,可進一步應用交通號结燈 η包括-中纖lu,—刪—_口 112 ;—縣嶋 == 開放窗π 112 ;-光源模組1U1設置於中空殼體lu Μ,包含有複數個不同波 長的LED《LED之封裝結構;以及一控制迴路(未圖示),配設於殼體⑴内並 連接至光源模、组im’俾控制該等LED之部分或全軸⑤色或單色呈現於透光 性燈罩112卜而其中所使用的或咖織結構之特徵如前述第一較佳實 施例至第四較佳實施例的其中任一實施例所述。 1參見第十—A圖鱗十二8圖,本發明進_步提出料四較佳實施例, 依據本發賴提^ LED或LED㈣結構,可進__步顧交通細旨示燈η, 此交通線道指示燈12 ’主要係於—透明倾殼體121内裝設—太雜板㈤、 -充電電路⑵2、-蓄電器1213、一自動發光電路1214與—光源模組i2i5, 其中太陽驗⑵丨係朝上裝設於透明倾殼體121内,藉㈣收太陽能而將其1J4^U4U • In the embodiment (4), the present invention proposes a sixth preferred embodiment. According to the present invention, the device or the touch device 丨1, 丨t _ _ _ _ 4 Display module (, Fucao Di ° 3 panel module 41, a driver circuit module (not shown) and - backlight (four) cut), f light source module contains a plurality of coffee or better embodiment The features of the structure are more obvious than those of the TCT^, ^5_'. The invention is further improved by using the portable computer in accordance with the present invention. 5. The portable computer 5 includes at least a device and a touch display device. The display unit 53 is selected from one of the group consisting of a liquid crystal display, and the display 83 includes at least a panel module 531. ) and a backlight module (please refer to the second picture and the third picture), the backlight module uses a mold package and has a plurality of LED or LED posts; the screaming (4) led or led = the characteristics of the structure as described above - Referring to the sixth embodiment of the preferred embodiment to the preferred embodiment of the present invention, the present invention further provides an eighth preferred embodiment, According to the invention, the LED or LED package structure n-step projection device ό, the projection device 6 at least includes a correction device and a drive circuit device and a mirror device 61, and the lens device & at least comprises a light source The module 6n, the lens module 612 and the subsequent focusing module are positive, and the light source module comprises W such that the _ED or (4) brain features are as before; L is a to the fourth preferred embodiment One embodiment is described. The seventh preferred embodiment of the present invention further provides a ninth preferred embodiment. The 1345040 coffee or LED package structure according to the present invention can further be applied to a rear projection television 7, which includes at least one body 7 At the front end of the casing 71, the screen 72, the drive circuit is housed in the casing, the projection device 73 and the optical reflection device 74 ribs reflect the image projected by the projection device 73 to the screen 72. The projection device 74 includes at least one light source module, a lens module and a subsequent focusing module, which are relatively opposite to each other. The LED or (4) package structure is characterized by any one of the foregoing first preferred embodiment to the fourth preferred embodiment. . Referring to the eighth embodiment, the present invention further provides a preferred embodiment of the LED or LED package structure according to the present invention. The optical communication system 8 can be further applied. The optical communication system 8 includes a light emitting module 8 a signal generation module 82, a fiber optic network transmission channel 83, and at least one light receiving module 84. The light emitting module 81 is characterized by comprising a plurality of LED or LED package structures, and the LED or LED package structure used therein is characterized by any one of the foregoing first to fourth preferred embodiments. As stated in the example. Referring to the ninth embodiment, the present invention further provides a preferred embodiment. According to the LED or LED package structure proposed by the present invention, the lamp 9 can be further applied, and the lamp includes a casing %; a circuit substrate (not shown) is housed in the housing 91 and is provided with a pair of electrodes and a plurality of LED or LED package structures; the housing 91 has a connector 92 at one end for operatively coupled to the external lamp socket 93 and is conductive To one of the pair of circuit boards. The features of the LED or LED package structure used therein are as described in any of the first preferred embodiment to the fourth preferred embodiment of the present invention. Referring to FIG. 10A and FIG. 10B, the present invention further provides a twelfth preferred embodiment. According to the LED or LED package structure proposed by the present invention, the vehicular lamp 10 can be further applied, and the vehicular lamp 10 is at least The utility model comprises a hollow shell 1〇1 and a translucent lampshade 102 disposed in the open window of the shell 1〇1. The housing has a lamp holder 1〇11, a circuit board 1〇12 and a plurality of LED or LED packages. The structure 12 1345040 1013 is disposed in the county 1011, and the LED or LED package structure of the ship is as described in any one of the foregoing first preferred embodiment to the fourth preferred embodiment. Please refer to the tenth-FIG. 'Beifa Wei-Step to propose the thirteenth preferred embodiment. According to the LED "LED sealing structure" proposed by the present invention, the traffic junction light η can be further applied to include - the medium fiber lu, - _ mouth 112; - county 嶋 = = open window π 112; - light source module 1U1 is placed in the hollow casing lu Μ, contains a plurality of LEDs of different wavelengths "LED packaging structure; and a control loop (not shown Illustrated), disposed in the casing (1) and connected to the light source module, the group im'俾 controls the part of the LED or the whole axis 5 colors or monochrome is presented in the translucent lampshade 112 and used or woven The features of the structure are as described in any of the foregoing first to fourth preferred embodiments. 1 See the tenth-A scales 12:8, the present invention proceeds to the fourth preferred embodiment, according to the structure of the LED or LED (four), can enter the __ step by step of the traffic light η, The traffic lane indicator light 12' is mainly installed in the transparent tilting shell 121 - too miscellaneous board (5), - charging circuit (2) 2, - electric storage device 1213, an automatic lighting circuit 1214 and - light source module i2i5, wherein the sun test (2) The tether is mounted upward in the transparent tilting housing 121, and the solar energy is taken by (4)

轉換成魏,並經充電電路1212而對蓄f|| 1213充電,自動發光電路i2i4係 連接至太陽能充電電路1212與裝設在殼體121内之光源模組⑵5,進而使光源 模、且⑵5發光光源模組咖包含有複數個led或l印封裝結構,其中所使 用的LED或LED之封裝結構之特徵如前述第_較佳實酬至第四較佳實施例的 其中任一實施例所述。 月參見第十―® ’本發贿-步提出第十五較佳實施例,依據本發明所提 '1、:或LED封裝結構,可進一步應用交通標示裝置13,此交通標示裝置至 乂匕s -支樓體m、以及至少—設置在支樓體之標示體132。其中標示體⑶ 13 1345040 包括:-燈箱(未圖示),係以預定尺寸設製而成,具有一透光面;一透光面板 ,設置於燈箱之透光面,其表面設有就之文字或_之標示·—光源模 組(未圖不)容設於該燈箱内’以預定距離朝向透光面板,由内向外投射,使該標 不明亮;以及-電源裝置(未圖示),用以供給該等光賴組所需之電力;而其中 所使用的LED或LED封裝結構之特徵如前述第—較佳實施例至第四較佳實施例 的其中任一實施例所述。 本發明進-步提出第十六較佳實施例,依據本發明所提出之㈣或咖 封裝結構’可進-步應用數位電子裝置(未圖示),此數位電子裝置可以是影印 機、知描機、傳真機、辦公室多工事務機、液晶電視、電子廣告看板、電子遊 樂器、個人數位助理(PDA)、或行動通訊裝置等,其特徵是具有一顯示器。此數 位電子裝置具有-錢池以提供·^之統,光祕組包含有複數個咖 ^ED封裝、纟。構’而射所制的LED壯ed封裝結構之雜如前述第一較 佳實施例至第四雛實施例的其巾任__實施例所述。 、斤述僅為本發明之較佳實施例’並非用以限定本發明之權利範圍;同 盼雜士的A述對於熟知本技術領域之專門人士應可日月瞭及實施,因此其他未 2本發明所揭示之精神下所完成的等效改變或修飾,均應包含在f請專利範 【圖式簡單說明】 施例A 4圖’雜據本發明提出之第-較佳實施例及第二較佳實 她例,為—種LED封裝結構。 平乂狂貫 施:二:=:根據本發明提㈣三―佳實 的直意圖’雜據科明提k紅錄實關,為—種具有-Converting to Wei, and charging the storage f|| 1213 via the charging circuit 1212, the automatic lighting circuit i2i4 is connected to the solar charging circuit 1212 and the light source module (2) 5 installed in the housing 121, thereby making the light source module, and (2) 5 The illuminating light source module includes a plurality of LED or LED package structures, wherein the LED or LED package structure used is characterized by any of the foregoing embodiments of the fourth preferred embodiment. Said. Referring to the tenth--th'th bribe-step, the fifteenth preferred embodiment is proposed. According to the '1,: or LED package structure of the present invention, the traffic signing device 13 can be further applied, and the traffic signing device is s - the branch body m, and at least - the indicator body 132 disposed in the branch body. The indicator body (3) 13 1345040 includes: - a light box (not shown), which is formed by a predetermined size and has a light transmissive surface; a light transmissive panel is disposed on the light transmissive surface of the light box, and the surface thereof is provided The text or _ mark · the light source module (not shown) is accommodated in the light box 'toward the light-transmitting panel at a predetermined distance, projecting from the inside to the outside, so that the mark is not bright; and - power supply device (not shown) The power required to supply the optical groups; and the LED or LED package structure used therein is as described in any of the foregoing first to fourth preferred embodiments. The present invention further proposes a sixteenth preferred embodiment in which a digital electronic device (not shown) can be further applied according to the (four) or coffee package structure proposed by the present invention. The digital electronic device can be a photocopier, knowing A machine, a fax machine, an office multiplex machine, a liquid crystal television, an electronic billboard, an electronic game instrument, a personal digital assistant (PDA), or a mobile communication device, etc., are characterized by having a display. This digital electronic device has - Qianchi to provide the system, and the optical group contains a plurality of packages, 纟. The LED ed package structure made by the structure is similar to that of the first preferred embodiment to the fourth embodiment described above. The description of the preferred embodiment of the present invention is not intended to limit the scope of the present invention; the description of the acquaintance of the acquaintance is applicable to the person skilled in the art, and therefore the other is not Equivalent changes or modifications made in the spirit of the present invention should be included in the patent application form [Simplified description of the drawings] Example A 4 Figure 'The first preferred embodiment and the first embodiment of the present invention Secondly, her case is an LED package structure. Flat and madness Shi: Two:=: According to the present invention, (4) three---

li4^U4U 的係根據本發明提出之第五錄實餅為一種具有-> 第四岐-示相,係根據本發明提以第沐 —種具有哪 的顯不器。 第五圖為一示意圖,係根據本發 的可攜式制。 故出之第馈佳實施例’為—種具有㈣ 的投示意圖’錄據本發明提出之第人較佳實施例,^種具有哪 的光=:示意圖’係根據本發明提出之第十較佳實施例,為-種具⑽ LED第的九燈Γ—示_,係根據本發賴出之軒—難實施例,為一種具有 ,L==B ^ ’係根據本發明提出之第十二較佳實施例,為一種具 ㈣本發明如之第十三較佳實關,為一種具有 第十二A圖與第十二B圖 種具有LED較觀道細燈/、 賴出之第十四難實施例,為- 通標圖’絲據本發明提出之第十五較佳實酬,為-種具有⑽的交Li4^U4U is a fifth recorded cake according to the present invention which has a -> fourth 岐-phase, which is according to the present invention. The fifth figure is a schematic view of the portable system according to the present invention. Therefore, the preferred embodiment of the present invention is a schematic diagram of the invention having the (four) projections. The preferred embodiment of the present invention proposed by the present invention, which light is included: the schematic diagram is the tenth comparison according to the present invention. A preferred embodiment is a nine-lamp 示 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The second preferred embodiment is a thirteenth preferred embodiment of the present invention, and has a twelfth A picture and a twelfth B picture type having an LED lighter/lighting lamp. The fourteenth difficult embodiment is a fifteenth preferred remuneration according to the present invention, which is a kind of (10)

ΙΑ、1B 11ΙΑ, 1B 11

【主要元件符號說明】 LED封裝結構 LED 承座 15 111 1345040[Main component symbol description] LED package structure LED socket 15 111 1345040

第一電極 112 基板 113 第一半導體導電層 114 多層量子井 115 第二半導體導電層 116 透明導電層 117 第二電極 118 封裝材料 119 波長轉換式散射粒子 1191 直下式背光模組 2 殼體 21 光學擴散膜片 22 光源模組 23 側光式背光模組 3 殼體 31 光學擴散膜片 32 光源模組 33 顯示器 4 面板模組 41 可攜式電腦 5 電腦主體 51 輸入裝置 52 顯示器 53 面板模組 531 投影設備 6 鏡頭裝置 91 16 1345040 光源模組 611 透鏡模組 612 聚焦模組 613 背投影電視 7 • 箱體 71 屏幕 72 投影設備 73 反射裝置 74 光通訊系統 8 • 光發射模組 81 訊號產生模組 82 光纖網路傳輸通道 83 光接收模組 84 燈具 9 殼體 91 一端具一接頭 92 燈具插座 93 φ 車用燈具 10 中空殼座 101 透光性燈罩 102 燈座 1011 電路板 1012 LED封裝結構 1013 交通號誌燈具 11 殼體 111 光源模組 1111 17 1345040 窗口 112 透光性燈罩 1121 交通線道指示燈 12 殼體 121 • 太陽能板 1211 充電電路 1212 蓄電器 1213 自動發光電路 1214 光源模組 1215 • 交通標示裝置 13 支撐體 131 標示體 132 透光面板 1321First electrode 112 substrate 113 first semiconductor conductive layer 114 multilayer quantum well 115 second semiconductor conductive layer 116 transparent conductive layer 117 second electrode 118 encapsulation material 119 wavelength-converting scattering particle 1191 direct-lit backlight module 2 housing 21 optical diffusion Diaphragm 22 Light source module 23 Side-light backlight module 3 Housing 31 Optical diffusing diaphragm 32 Light source module 33 Display 4 Panel module 41 Portable computer 5 Computer main body 51 Input device 52 Display 53 Panel module 531 Projection Device 6 Lens device 91 16 1345040 Light source module 611 Lens module 612 Focus module 613 Rear projection TV 7 • Cabinet 71 Screen 72 Projection device 73 Reflecting device 74 Optical communication system 8 • Light emitting module 81 Signal generating module 82 Optical fiber network transmission channel 83 Light receiving module 84 Lamp 9 Housing 91 One end with a connector 92 Lamp socket 93 φ Car lamp 10 Hollow housing 101 Translucent lamp cover 102 Lamp holder 1011 Circuit board 1012 LED package structure 1013 Traffic Sign lamp 11 housing 111 light source module 1111 17 1345040 window 112 light transmissive lamp cover 112 1 Traffic lane indicator 12 Housing 121 • Solar panel 1211 Charging circuit 1212 Battery 1213 Automatic lighting circuit 1214 Light source module 1215 • Traffic marking device 13 Support body 131 Marker 132 Translucent panel 1321

Claims (1)

1345040 十、申請專利範圍: 1_ -種發光二極體職結構,包含有—承座、至少—個發光二極體元件容置 於5亥承座上、以及—封裝材料包覆該發光二極體元件;其特徵在於該發光 二極體元件包括: 一第一電極; 一基板,形成於該第一電極之上; 一第一半導體導電層’形成於該基板之上; -主動層’以具有複數個不細且高低起伏雜的多層量子井形成於該第 一半導體導電層之上; 一第一'半導體導電層’形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 2. 一種發光二極體封裝結構,包含有一承座、至少一個發光二極體元件容置 於該承座上、以及一封裝材料包覆該發光二極體元件;其特徵在於該發光 二極體元件包括: 一基板; 一第一半導體導電層,形成於該基板之上; 一第一電極,形成於該第一半導體層上之一侧; 一主動層,形成於該第一半導體導電層上之另一側,具有複數個不規則且 高低起伏形狀的多層量子井; 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 1345040 與該主動層之間’藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 3. 依據中請專利範圍第1項或第2項所述之發光二極體封裝結構,其中該基 板之材料係選自於由下列所構成之群組:藍寶石、氮化錄(GaN):'氮2 (Α1Ν)、碳化矽(SiC)、砷化鎵(GaAs)、磷化鎵(Gap)、矽⑻)、鍺㈣、氧化 鋅(ZnO)、氧化鎂(MgO)、LAO、LGO以及玻璃材料。 4. 依據巾請專纖圍第1項或第2項所述之發光二極體封裝結構,其中該第 -半導體導電層為-N-Type之半導體層,該第二半導體導電層為— 之半導體層。 5. 依據中請專利範圍第1項或第2項所述之發光二極體封脑構,其中該第 j導體導電層之材料為ΠΙ々族化合物半導體,其中m族材料係選^於 由鋁(A1)、鎵(Ga)及銦(In)所構成的群組,而v族材料選自於由氮、磷 及珅(As)所構成的群組。 6. 依據申請專利範圍第1項或第2項所述之發光二極體封裝結構,其中該第 二半導體導電層之材料為ΠΙ·ν族化合物半導體,其中m族^係選自於 由鋁(A1)、鎵(Ga)及銦(In)所構成的群組,而v族材料選自於由氮(n)、磷(p) 及砷(As)所構成的群組。 7. 依據申請專利範圍第1項或第2項所述之發光二極體封裝結構,其中該透 明導電層之材料係選自於由下列所構成之群組:Ni/Au、Ni〇/Au、Ta/Au、 氮化鎢鈦(WTiN)、氣化鈦(TiN)、氧化銦錫、氧化鉻錫、氧化錄錫、氧化辞 鋁及氧化辞錫。 8. 依據申請專利範圍第1項或第2項所述之發光二極體封裝結構,其中該異 質材料所形成之複數個微粒係含有不同於第一半導體導電層的異質材料, 該微粒係選自於由下列所構成之群組:π族、ΠΙ族、v族、VI族、ΠΙ·ν族 化合物、II-V族化合物及II-VI族化合物。 9. 依據申請專利範圍第1項或第2項所述之發光二極體封裝結構、,其中該多 20 1345040 層量子井之每-不規則且高缺伏形狀之橫截面之寬高比係介於3: i〜 1 : 10之間。 10. 依據f 4專利第1項或第2項所述之發光二極體封裝結構,其中該多 層里子井之每-不規取高低起伏表面之表面祕度Ra齡於G.5〜5〇奈 米之間。 11. 依據申凊專利細第i項或第2項所述之發光二極體封裝結構其中該多 層里子井之每一不規則且高低起伏形狀之表面粗糙度Ra之較佳值為30〜 40奈米。 12. 依據申凊專利範圍第i項或第2項所述之發光二極體封裝結構,其中該多 層置子井的材料係選自於由氮化物、填化物,化物及糾化物所構成之 群組。 13. 依據巾料概®第1項絲2項所述之發光二極體封裝結構,其中該多 層置子井之材料為m_v族化合物半導體,其中ΙΠ族材料係選自於由鋁 (Α1)、錄(Ga)及銦(ιη)所構成的群組,而ν族材料選自於由氮⑼、雄(ρ)及砷 (As)所構成的群組。 1屯依據申請專利範圍第i項或第2項所述之發光二極體封裝結構,其中該封 裝材料内進一步包含複數個波長轉換式散射粒子(wave-length converting scatters) ’由該發光二極體元件發射至該等波長轉換式散射粒子之光線被該 等波長轉換式散射粒子所散射,且該部分之光線係被該等波長轉換式散射 粒子吸收而以另一波長之光線射出。 15·依據申請專利範圍第i項或第2項所狀發光二極體封裝結構,其中該至 少一個發光二極體元件係以陣列方式容置於該承座上。 16. —種以發光二極體為光源的背光模組,選自於直下式背光模組與側光式背 光模組所構成群組之其中之一,至少包含一具有開口的殼體、設置於該開 口侧的光學擴散膜片、以及設置於該殼體内的光源模組,該光源模組包含 有複數個發光二極體元件或該發光二極體元件之封裝結構;其特徵在於該 21 ^45040 發光二極體元件包括: 一第一電極; 一基板,形成於該第—電極之上; 一第一半導體導電層,職於該基板之上; 動層以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 一半導體導電層之上; —第二半導體導電層’形成於該主動層之上; —透明導電層’形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中種異質材料所形成之複數個微粒散佈於該第-半導體導電層 與該主動層之間’藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 種以發光—極體為光源的背光模組,選自於直下式背光模組與側光式背 光拉組所構成群組之其中之一,至少包含_具有開口的殼體、設置於該開 口側的光學雛則、以及設置於賊體⑽光賴組,該光賴組包含 有複數個發光二極體元件或該發光二極體元狀封裝結構;其特徵在於該 發光二極體元件包括: ^ 一基板; 一第一半導體導電層,形成於該基板之上; 一第一電極,形成於該第一半導體層上之一侧; 一主動層,形成於該第一半導體導電層上之另一側,具有複數個不規則且 高低起伏形狀的多層量子井; 一第二半導體導電層,形成於該主動層之上; 一透明導電層’形成於該第二半導體導電層之上;以及 一第二電極’形成於該透明導電層之上; 其中’至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 22 1345040 與該主動層之間’藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 18. 種以發光二極體為光源的顯示器’選自於由液晶顯示器與觸控顯示器所 構成群組之其中之一,至少包含一面板模組、一驅動電路模組與一背光模 組’ δ亥背光模組使用之光源模組包含有複數俩發光二極體元件或該發光二 極體7L件之封裝結構;其特徵在於該發光二極體元件包括: 一第一電極; —基板,形成於該第一電極之上;1345040 X. Patent application scope: 1_-Light-emitting diode structure, including-bearing, at least one light-emitting diode component is placed on the 5H socket, and the packaging material covers the light-emitting diode a body element; wherein the light emitting diode element comprises: a first electrode; a substrate formed on the first electrode; a first semiconductor conductive layer 'on the substrate; - an active layer' a plurality of multilayer quantum wells having a plurality of irregularities and high and low undulations are formed on the first semiconductor conductive layer; a first 'semiconductor conductive layer' is formed on the active layer; and a transparent conductive layer is formed on the second Above the semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein a plurality of particles formed by the at least one heterogeneous material are interspersed between the first semiconductor conductive layer and the active layer, thereby Forming the multilayer quantum well having a plurality of irregular and high and low undulating shapes. 2. A light emitting diode package structure comprising a socket, at least one light emitting diode component is received on the socket, and a packaging material encapsulating the light emitting diode component; wherein the light emitting diode The body element includes: a substrate; a first semiconductor conductive layer formed on the substrate; a first electrode formed on one side of the first semiconductor layer; an active layer formed on the first semiconductor conductive layer On the other side, a plurality of multi-layer quantum wells having irregular shapes and high and low undulations; a second semiconductor conductive layer formed on the active layer; and a transparent conductive layer formed on the second semiconductor conductive layer And a second electrode formed on the transparent conductive layer; wherein 'a plurality of particles formed by at least one heterogeneous material are interspersed between the first semiconductor conductive layer 1345040 and the active layer', thereby forming the A plurality of multi-layer quantum wells of irregular and high and low undulating shape. 3. The light emitting diode package structure according to claim 1 or 2, wherein the material of the substrate is selected from the group consisting of sapphire, GaN (GaN): 'Nitrogen 2 (Α1Ν), tantalum carbide (SiC), gallium arsenide (GaAs), gallium phosphide (Gap), niobium (8), niobium (tetra), zinc oxide (ZnO), magnesium oxide (MgO), LAO, LGO, and Glass material. 4. The light-emitting diode package structure according to Item 1 or 2, wherein the first-semiconductor conductive layer is a semiconductor layer of -N-Type, and the second semiconductor conductive layer is - Semiconductor layer. 5. The light-emitting diode encapsulation structure according to the first or second aspect of the patent application, wherein the material of the j-th conductive layer is a steroid semiconductor, wherein the m-group material is selected from A group consisting of aluminum (A1), gallium (Ga), and indium (In), and the group V material is selected from the group consisting of nitrogen, phosphorus, and antimony (As). 6. The light emitting diode package structure according to claim 1 or 2, wherein the material of the second semiconductor conductive layer is a ΠΙ·ν group compound semiconductor, wherein the m group is selected from aluminum A group consisting of (A1), gallium (Ga), and indium (In), and the group V material is selected from the group consisting of nitrogen (n), phosphorus (p), and arsenic (As). 7. The light emitting diode package structure according to claim 1 or 2, wherein the material of the transparent conductive layer is selected from the group consisting of Ni/Au, Ni〇/Au , Ta / Au, titanium nitride (WTiN), titanium (TiN), indium tin oxide, chromium oxide tin, oxidation recorded tin, aluminum oxide and oxidized tin. 8. The light emitting diode package structure according to claim 1 or 2, wherein the plurality of particles formed by the heterogeneous material contain a heterogeneous material different from the first semiconductor conductive layer, and the microparticles are selected From the group consisting of π, steroid, v, VI, ΠΙ·ν, II-V, and II-VI. 9. The light-emitting diode package structure according to claim 1 or 2, wherein the aspect ratio of the cross section of each of the 20 1345040 layer quantum wells is irregular and high-deficient Between 3: i~ 1 : 10. 10. The light-emitting diode package structure according to Item 1 or Item 2 of the f4 patent, wherein the surface secret of each of the multi-layer linings is irregularly inferior to G.5~5〇. Between the rice. 11. The light-emitting diode package structure according to the above item or item 2, wherein the surface roughness Ra of each irregular and high and low undulating shape of the multi-layer lining is preferably 30 to 40. Nano. 12. The light emitting diode package structure of claim 1, wherein the material of the multilayer well is selected from the group consisting of nitrides, fillers, compounds, and correction compounds. Group. 13. The light-emitting diode package structure according to the item 2 of the invention, wherein the material of the multilayer well is an m_v compound semiconductor, wherein the lanthanum material is selected from aluminum (Α1) A group consisting of (Ga) and indium (ιη), and the ν group material is selected from the group consisting of nitrogen (9), male (ρ), and arsenic (As). The light emitting diode package structure according to the invention of claim 1, wherein the package material further comprises a plurality of wavelength-length converting scatters from the light-emitting diode The light emitted from the bulk element to the wavelength-converting scattering particles is scattered by the wavelength-converting scattering particles, and the portion of the light is absorbed by the wavelength-converting scattering particles and emitted by the light of another wavelength. 15. The light emitting diode package structure according to claim i or item 2, wherein the at least one light emitting diode element is received in an array on the socket. 16. A backlight module using a light-emitting diode as a light source, which is selected from the group consisting of a direct-lit backlight module and an edge-lit backlight module, and includes at least one housing having an opening and a setting An optical diffusion film on the opening side, and a light source module disposed in the housing, the light source module includes a plurality of light emitting diode elements or a package structure of the light emitting diode element; 21 ^ 45040 LED component comprises: a first electrode; a substrate formed on the first electrode; a first semiconductor conductive layer on the substrate; the movable layer has a plurality of irregularities a multilayer quantum well having a high and low relief shape formed on the first semiconductor conductive layer; a second semiconductor conductive layer 'on the active layer; a transparent conductive layer ' formed on the second semiconductor conductive layer; a second electrode is formed on the transparent conductive layer; wherein a plurality of particles formed by the heterogeneous material are interspersed between the first semiconductor conductive layer and the active layer, thereby forming the device A multi-layer quantum well with a plurality of irregular, high and low undulating shapes. The backlight module with the light-emitting body as the light source is selected from the group consisting of a direct-lit backlight module and an edge-lit backlight pull group, and at least includes a housing having an opening, and is disposed at the opening The optical assembly of the side, and the optical group of the thief body (10), the optical ray group includes a plurality of light emitting diode elements or the light emitting diode package structure; wherein the light emitting diode element comprises a substrate; a first semiconductor conductive layer formed on the substrate; a first electrode formed on one side of the first semiconductor layer; an active layer formed on the first semiconductor conductive layer On the other side, a plurality of multilayer quantum wells having irregular shapes and high and low undulating shapes; a second semiconductor conductive layer formed on the active layer; a transparent conductive layer 'formed on the second semiconductor conductive layer; a second electrode 'formed on the transparent conductive layer; wherein 'a plurality of particles formed by at least one heterogeneous material are interspersed between the first semiconductor conductive layer 22 1345040 and the active layer Thereby forming the irregular and has a plurality of multiple quantum well layers of undulating shape. 18. A display having a light-emitting diode as a light source is selected from one of a group consisting of a liquid crystal display and a touch display, and includes at least one panel module, a driving circuit module and a backlight module. The light source module used in the δH backlight module comprises a plurality of light emitting diode elements or a package structure of the light emitting diode 7L; wherein the light emitting diode element comprises: a first electrode; Formed on the first electrode; 第一半導體導電層’形成於該基板之上; 主動層,以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 —半導體導電層之上; 一第二半導體導電層,形成於該主動層之上; —透明導電層’形成於該第二半導體導電層之上;以及 —第二電極,形成於該透明導電層之上; 八中至汄一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與β亥主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 • 19. 種以發光一極體為光源的顯示器,選自於由液晶顯示器與觸控顯示器所 j冓成群、.且之其+之至少包含—面板模組、—驅動電路模組與一背光模 、’且’邊背級la使用之光賴組包含有複數個發光二極體元件或該發光二 "^體元件之封裝結構;其特徵在於該發光二極體元件包括·· ~基板; —第-半導體導電層,形成於該基板之上; 一第-電極,形成於該第—半導體層上之一側; Γ主動層,形成於該第—半導體導電層上之另-側,具有複數個不規則且 向低起伏形狀的多層量子井; 23 1345040 一第二半導體導電層’形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井β 20. —種以發光二極體為顯示器光源的可攜式電腦,至少包含有一電腦主體、 一輸入裝置與一顯示器,該顯示器選自於由液晶顯示器與觸控顯示器所構 成群組之其中之一,該顯示器至少包含一面板模組、一驅動電路模組與一 背光模組,該背光模組使用之光源模組包含有複數個發光二極體元件或該 發光二極體元件之封裝結構;其特徵在於談發光二極體元件包括: 一第一電極; 一基板,形成於該第一電極之上; 一第一半導體導電層,形成於該基板之上; 一主動層,以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 一半導體導電層之上; 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 21· —種以發光二極體為顯示器光源的可攜式電腦,至少包含有一電腦主體、 一輸入裝置與一顯示器,該顯示器選自於由液晶顯示器與觸控顯示器所構 成群組之其中之一,該顯示器至少包含一面板模組、一驅動電路模組與一 背光模組,該背光模組使用之光源模組包含有複數個發光二極體元件或該 24 1345040 發光二極體元件之封裝結構;其特徵在於該發光二極體元件包括: 一基板; —第—半導體導電層,形成於該基板之上; —第一電極,形成於該第一半導體層上之一侧; 主動層,形成於該第一半導體導電層上之另一側,具有複數個不規則且 高低起伏形狀的多層量子井; 第一半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 —第二電極,形成於該透明導電層之上; 其中’至少-種異質材制形叙複數鑛粒散佈於該第—半導體導電層 與该主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 2.種以發光二極體為光源的投影設備,至少包含一殼體、容置於該殼體内 之-驅動電路裝置與一鏡頭裝置,該鏡頭裝置至少包含一光源模組、一透 鏡模組與賴之聚紐組,該光職組包含有複數個發光三極體元件或該 發光一鋪潘之封裝結構;其特徵在於該發光二極體元件包括: 一第一電極;a first semiconductor conductive layer ′ is formed on the substrate; an active layer is formed on the first semiconductor conductive layer by a plurality of quantum wells having a plurality of irregular and high and low undulating shapes; and a second semiconductor conductive layer is formed on the second semiconductor conductive layer Above the active layer; a transparent conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; a plurality of particles formed by a heterogeneous material Dispersing between the first semiconductor conductive layer and the β-well active layer, thereby forming the multilayer quantum well having a plurality of irregular and high and low undulating shapes. • 19. A display with a light-emitting body as a light source, selected from the group consisting of a liquid crystal display and a touch display, and the + of which includes at least a panel module, a driving circuit module and a The backlight module, the 'and' side-back stage la, includes a plurality of light-emitting diode elements or a package structure of the light-emitting two-component elements; and the light-emitting diode element includes: a substrate; a first semiconductor conductive layer formed on the substrate; a first electrode formed on one side of the first semiconductor layer; and an active layer formed on the other side of the first semiconductor conductive layer a plurality of multi-layer quantum wells having an irregular shape and a low undulation shape; 23 1345040 a second semiconductor conductive layer 'formed on the active layer; a transparent conductive layer formed on the second semiconductor conductive layer; a second electrode is formed on the transparent conductive layer; wherein a plurality of particles formed by the at least one heterogeneous material are interspersed between the first semiconductor conductive layer and the active layer, thereby forming the complex A plurality of multi-layer quantum wells having an irregular and high-pitched shape β. 20. A portable computer using a light-emitting diode as a display light source, comprising at least a computer body, an input device and a display, the display being selected from the group consisting of One of the group consisting of a liquid crystal display and a touch display, the display includes at least one panel module, a driving circuit module and a backlight module, and the light source module used in the backlight module includes a plurality of light emitting a diode structure or a package structure of the light emitting diode element; wherein the light emitting diode element comprises: a first electrode; a substrate formed on the first electrode; a first semiconductor conductive layer, Formed on the substrate; an active layer formed on the first semiconductor conductive layer by a plurality of quantum wells having a plurality of irregular and high and low undulating shapes; a second semiconductor conductive layer formed on the active layer a transparent conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; A plurality of particles formed of at least one foreign material interspersed between the first conductive semiconductor layer and the active layer, thereby forming the irregular and has a plurality of multiple quantum well layers of undulating shape. A portable computer using a light-emitting diode as a display light source includes at least a computer main body, an input device and a display, and the display is selected from the group consisting of a liquid crystal display and a touch display. The display device comprises at least one panel module, a driving circuit module and a backlight module. The light source module used in the backlight module comprises a plurality of LED components or the 24 1345040 LED component. a package structure; the light emitting diode element comprises: a substrate; a first semiconductor conductive layer formed on the substrate; a first electrode formed on one side of the first semiconductor layer; an active layer a multilayer quantum well having a plurality of irregular and high and low undulating shapes formed on the other side of the first semiconductor conductive layer; a first semiconductor conductive layer formed on the active layer; and a transparent conductive layer formed on Above the second semiconductor conductive layer; and - a second electrode formed on the transparent conductive layer; wherein - at least - a heterogeneous material is shaped and described Particles dispersed in the second - between the conductive layer and the semiconductor active layer, thereby forming the irregular and has a plurality of multiple quantum well layers of undulating shape. 2. A projection device using a light-emitting diode as a light source, comprising at least a casing, a driving circuit device and a lens device housed in the casing, the lens device comprising at least a light source module and a lens module And the illuminating group includes a plurality of illuminating triode elements or the illuminating package structure; wherein the illuminating diode element comprises: a first electrode; 一基板,形成於該第一電極之上; 一第一半導體導電層,形成於該基板之上; 子井形成於該第 -主動層,以具有複數個不規則且高低起伏形狀的多層量 一半導體導電層之上; 一第二半導體導電層,形成於該主動層之上; -透明導電層,戦於該第二半導料電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少質材料所形成之複數個微粒散佈於 與該主動層之間,藉此,拟^目士、不干等體等电! 心成雜有複數個不規狀高低起伏 多 25 1345040 層量子井 23. -種以發光二極體為光源的投影設備,至少包含-殼體、容置於 之-驅動電路裝置與-鏡酿置,該綱裝置至少包含—光賴 鏡模組與隨狀《、,該光賴蛇含賴數個贱二輔 發光-極體70件之封裝結構;其特徵在於該發光二_元件包括:3 一基板; 一第一半導體導電層,形成於該基板之上; 一第一電極,形成於該第一半導體層上之一側; -主動層,械於該第—半導體導電層上之另—側,具錢數個不規則且 高低起伏形狀的多層量子井; 一第二半導體導電層,形成於該主動層之上; -透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少-種異質材料卿成之複數個錄麟於該第—半導體導電層 與該主動層之間’藉此’形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 24. -種以發光二極體為光源的背投影電視,至少包含一箱體、設置於箱體前 端之-屏幕、容置於鋪體内之-驅動電路模組、—投影設備與一光學反 射裝置用以反射4投影設備投射丨之影像至該屏幕,該投影設備包含至少 -光源模組、-透鏡模組與隨後之聚焦、模组,該光源模組包含有複數個發 光二極體元件或該發光二極體元件之封裝結構;其舰在於該發光二極體 元件包括: 一第一電極; 一基板,形成於該第一電極之上; 一第一半導體導電層’形成於該基板之上; -主動層,以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 26 1345040 一半導體導電層之上; 一第二半導體導電層’形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少-種異質材料所形成之複數個微粒散佈於該第_半導體導電層 與該主動狀Lb ’形賴具有複數個不酬且高低起伏之形狀的多 層量子井。 25. 一種以發光二極體為光源的背投影電視,至少包含一箱體、設置於箱體前 端之-屏幕、容置於該_内之—驅動電路模組一投影設備與一光學反 射襄置用以反射該投影設備投射出之影像至該屏幕,該投影設備包含至少 光源模組、-透賴__之健、模組,該光賴組包含有複數個發 光-極體7C件或邊發光二極體元件之封裝結構;其特徵在於該發光二極體 元件包括: —基板; —第—半導體導電層,形成於該基板之上; 一第—電極,形成於該第一半導體層上之一側;a substrate formed on the first electrode; a first semiconductor conductive layer formed on the substrate; a subwell formed on the first active layer to have a plurality of layers of irregular and high and low undulating shapes a semiconductor conductive layer; a second semiconductor conductive layer formed on the active layer; a transparent conductive layer over the second semiconductor material layer; and a second electrode formed on the transparent conductive layer Above the layer; wherein 'at least a plurality of particles formed by the material are interspersed between the active layer and the active layer, thereby, and the like, the body, the body, etc.! The heart is mixed with a plurality of irregular high and low undulations 25 1345040 layer quantum wells 23. A projection device with a light-emitting diode as a light source, including at least a shell, a housing-drive circuit device and a mirror The device comprises at least a light-receiving mirror module and a package structure comprising: a plurality of 辅 辅 辅 辅 发光 极 极 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; a substrate; a first semiconductor conductive layer formed on the substrate; a first electrode formed on one side of the first semiconductor layer; - an active layer, bonded to the other side of the first semiconductor conductive layer a plurality of multi-layer quantum wells having an irregular shape and a high and low undulating shape; a second semiconductor conductive layer formed on the active layer; a transparent conductive layer formed on the second semiconductor conductive layer; and a first a second electrode formed on the transparent conductive layer; wherein 'at least one heterogeneous material is formed by a plurality of recordings between the first-semiconductor conductive layer and the active layer to form a plurality of irregularities And high and low Multi-layer quantum wells in the shape of a volt. 24. A rear projection television with a light-emitting diode as a light source, comprising at least one box, a screen disposed at the front end of the box, a drive circuit module housed in the shop body, a projection device and an optical device The reflecting device is configured to reflect the image projected by the 4 projection device to the screen, the projection device comprising at least a light source module, a lens module and a subsequent focusing and module, the light source module comprising a plurality of light emitting diodes An element or a package structure of the light emitting diode element; wherein the light emitting diode element comprises: a first electrode; a substrate formed on the first electrode; a first semiconductor conductive layer ' formed on the Above the substrate; an active layer, formed by a plurality of multi-layer quantum wells having a plurality of irregular and high and low undulating shapes on the 26th 1345040 semiconductor conductive layer; a second semiconductor conductive layer 'on the active layer; a transparent conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein at least one of the heterogeneous materials is formed _ Particles dispersed in the first conductive layer and the semiconductor active form Lb 'shape having a plurality of Lai not pay and the shape of ups and downs of a multi-quantum well layer. 25. A rear projection television using a light-emitting diode as a light source, comprising at least one box, a screen disposed at a front end of the box, and a driving device module, a projection device and an optical reflector. The projection device is configured to reflect the image projected by the projection device to the screen, the projection device comprises at least a light source module, a module, and the module includes a plurality of light-emitting body 7C pieces or a package structure of an edge-emitting diode element; wherein the light-emitting diode element comprises: a substrate; a first semiconductor conductive layer formed on the substrate; a first electrode formed on the first semiconductor layer One side; 古主動層’碱於該第-半導體導電層上之另_側,具有複數個不規則且 低起伏形狀的多層量子井; 第一半導體導電層,形成於該主動層之上; 透月導電層,形成於该第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; ^中’至少-種異質材料所形成之複數個微粒散佈於該第_半導體導電層 亥主動層之間’藉此’形成該具有複數财酬且高低触之形狀的多 層量子井。 種U發光二極體為光源的光通訊纽,包含—紐射模組、—訊號產生 、組、-細_傳輸通道及至少—光無歡;其特徵在於該光發射模 27 26. 1345040 組包含有複數個發光二極體元件或該發光二極體元件之封裝結構,該發光 二極體元件包括: 一第一電極; 一基板,形成於該第一電極之上; 一第一半導體導電層,形成於該基板之上; 一主動層’以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 一半導體導電層之上; 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第—半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 27. —種以發光二極體為光源的光通訊系統,包含一光發射模組、一訊號產生 模組、一光纖網路傳輸通道及至少一光接收模組;其特徵在於該光發射模 組包含有複數個發光二極體元件或該航二極體元件之封裝結構,該發光 二極體元件包括: 一基板, 一第一半導體導電層,形成於該基板之上; 一第一電極,形成於該第一半導體層上之一側; -主動層’形成於該第—半導料電層上之另—側,具有複數個不規則且 高低起伏形狀的多層量子井; -第二半導體導電層,形成於該主動層之上; -透明導電層’形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少-種異質材料所形成之複數個微粒散佈於該第—半導體導電層 28 1345040 與該主動層之間,藉此, 層量子井。 形成該具有複數财酬且高低_之形㈣多 28. —種發光二極體燈具,包括: 一殼體,一端具一接頭;以及 一電路基板,容置於該殼體内,設置有一對電極與複數個發光二極體元件 或該發光二極體元件之封裝結構; 其中,該接頭供可操作地結合至外部之燈具插座,並導通至 一對電極;其特徵在於發光二極體元件包括 ~ ^ 一第一電極; 一基板,形成於該第一電極之上; 一第一半導體導電層,形成於該基板之上; 一主動層,以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 一半導體導電層之上; 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 29. —種發光二極體燈具,包括: 一殼體,一端具一接頭;以及 一電路基板’容置於該殼體内,設置有一對電極與複數個發光二極體元件 或該發光二極體元件之封裝結構; 其中’該接頭供可操作地結合至外部之燈具插座,並導通至該電路基板之 一對電極;其特徵在於發光二極體元件包括 一基板; 29 1345040 一第一半導體導電層’形成於該基板之上; 一第一電極,形成於該第一半導體層上之一侧; 一主動層,形成於該第一半導體導電層上之另一側,具有複數個不規則且 高低起伏形狀的多層量子井; 一第二半導體導電層’形成於該主動層之上; 一透明導電層’形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 30. —種以發光二極體為光源的車用燈具’至少包括一中空殼座以及設置於該 殼座開放窗口之一透光性燈罩’該殼體内有一燈座,一電路板以及複數個 發光二極體元件或該發光二極體元件之封裝結構設置於該燈座;其特徵在 於該發光二極體元件包括 一第一電極; 一基板,形成於該第一電極之上; 一第一半導體導電層,形成於該基板之上; 一主動層,以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 一半導體導電層之上; 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 31. —種以發光二極體為光源的車用燈具,至少包括一中空殼座以及設置於該 30 1345040 级座開放窗口之-透光性燈罩,減體内有—燈座…電路板以及複數個 發光二極體元件或該發光二極體元件之封裝結構設置於該燈座;其特徵在 於該發光二極體元件包括 、 一基板; 一第一半導體導電層’形成於該基板之上; 一第一電極,形成於該第一半導體層上之一側; 一主動層’形成於該第-半導體導電層上之另—側,具有複數個不規則且 高低起伏形狀的多層量子井; 一第二半導體導電層’形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少—種異質材料所形成之複數個微粒散佈於該第-半導體導電層 、曰動層之間肖此,形成該具有複數個不規貞彳且高低起伏之形狀的多 層量子井。 32 一種Ϊ發光二極體為光源的交通號諸燈具,包括一中空殼體,一側設有-囪]透光性燈罩配置於該開放窗口;一光源模組設置於該中空殻 體^包含有複數個不同波長的發光二極體元件或該發光二極體元件之封 ^二構:以及-㈣迴路,配設於着翻並連接至該光賴組,俾控制 *發光—極ns件之部分或全*陶&色或單色呈現於 徵在於該光賴㈣註少—㈣光二鋪元件包括: 八特 一第一電極; 一基板’形成於該第-電極之上; 二【了體導電層,形成於該基板之上; =層’ u具有複數個不規則且高低起伏形狀的多層量子井形成於 一半導體導電層之上; 不 -第二半導體導電層,形成於該主動層之上; 31 1345040 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少-種異質材料所形成之複數個微粒散佈於該第—半導體導電芦 與該主動層之間,藉此’形成該具有複數個不酬且冑购伏之形: - 層量子井。 的夕 3:3_種以發光―極體為光源的交通號總燈具,包括一中空殼體,—側設有— 開放窗口;-透光性燈罩配置於該開放窗口;一光源模組設置於該執 體内,包含有複數個不同波發光二極體元件或該發光二極體轉3 躲構;以及-控制迴路’配設於該殼體内並連接至該光源模組,俾控制 矂該·光二紐元狀部分或全部麟色或單色呈現於透紐燈罩;其特 徵在於該光源模組具有至少一個發光二極體元件包括: 一基板; 一第一半導體導電層,形成於該基板之上; 一第一電極,形成於該第一半導體層上之一側; -主動層’形成於該第-半導料電層上之另—側,具有複數個不規則且 高低起伏形狀的多層量子井; 一第一半導體導電層’形成於該主動層之上; • 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少-種異質材料所形成之複數個微粒散佈於該第—半導體導電層 與該主動層之間’藉此,形成該具有複數個不規則且高低起伏之形狀的; 層量子井。 34. -種崎光二_絲_规線雖秘,主錢於—透鴨護殼體内 裝設-太陽能板、一充電電路蓄電器、一自動發光電路與一光源模組, 其中該太陽錄·找設⑽透_護健内,藉由做域能而將盆 轉換成電能,並經充電電路而對蓄電器充電,該自動發光電路係連接至太 32 1345040 陽能充電電路與裝設在殼體内之光源模組,進而使該光源模組發光;其特 徵在於該光職組包含有該光源模組包含有複數個發光二極體元件或該發 光二極體元件之封裝結構,該發光二極體元件包括 一第一電極; 一基板,形成於該第一電極之上; 一第一半導體導電層,形成於該基板之上; 一主動層,以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 一半導體導電層之上; '°Λ 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間’藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 35· -種以發光二極體為光源的交通線道指示燈,主要係於一透明保護殼體内 裝設-太陽能板、-充電電路'一蓄電器、一自動發光電路與一光源模組, 其中該太陽能板軸上裝設於該透明紐殼體内,藉由魏太陽能而將其 轉換成電能’並經充電電路而對蓄電器充電,該自動發光電路係連接至太 陽能充電電路與裝設在殼體内之光源模組,進而使該光源模組發光;其特 徵在於該光源模組包含有該光源模組包含有複數個發光二極體元件或該發 光二極體元件之封裝結構,該發光二極體元件包括 一基板; 一第一半導體導電層,形成於該基板之上; —第一電極,形成於該第一半導體層上之一側; =主動層’形成於該第-半導體導電層上之另—側,具有複數個不規則且 高低起伏形狀的多層量子井; 33 1345040 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 36. —種以發光二極體為光源的交通標示裝置,包含至少一支樓體、以及至少 一設置在該支撐體之標示體,其中該標示體包括: 一燈箱,係以預定尺寸設製而成,具有一透光面; 一透光面板,設置於該燈箱之透光面,其表面設有預定之文字或圖案之標 示;一光源模組容設於該燈箱内,以預定距離朝向該透光面板,由内向外 投射,使該標示明亮;以及 一電源裝置,用以供給該等光源模組所需之電力; 其特徵在於該光源模組包含有複數個發光二極體元件或該發光二極體元件 之封裝結構’該發光二極體元件包括: 一第一電極; 一基板’形成於該第一電極之上; 一第一半導體導電層,形成於該基板之上; -主動層,以具有複數個不細且高低域形狀❹層量子井形成於該第 一半導體導電層之上; 一第二半導體導電層,形成於該主動層之上; -透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中’至少-種異質材料所形成之複數個微粒散佈於該第—半導體導電層 與,亥主動層之間,藉此,形成該具有複數個不規則且高低起伏之雜的多 層量子井。 34 1345040 、以及至少 37. -種以發光二極體為光源的交通標示裝置,包含至少一支撐體 一設置在該支撐體之標示體,其中該標示體包括: 牙 一燈箱,係以預定尺寸設製而成,具有一透光面· -透光面板’設置於該燈箱之透絲,其表面財就之文字或圖 示;-光源模組容設於該燈箱内,以預定距離朝向該透光面板,由内= 投射,使該標示明亮;以及 一電源裝置,用以供給該等光源模組所需之電力. 二極體元件 其特徵在於該光源模組包含有複數個發光二極體元件或該發光 之封裝結構,該發光二極體元件包括:The paleoactive layer 'alkali on the other side of the first-semiconductor conductive layer, has a plurality of multi-layer quantum wells with irregular and low undulation shapes; a first semiconducting layer formed on the active layer; Formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein at least a plurality of particles formed by the at least one heterogeneous material are dispersed in the first semiconductor conductive layer The active layer forms a multi-layer quantum well with a complex and high-low-touch shape. The U-light-emitting diode is a light source of the light communication, comprising: a button module, a signal generation, a group, a fine_transmission channel, and at least a light-free layer; and the light-emitting module 27 26. 1345040 group a package structure comprising a plurality of light emitting diode elements or the light emitting diode element, the light emitting diode element comprising: a first electrode; a substrate formed on the first electrode; a first semiconductor conductive a layer formed on the substrate; an active layer 'on a plurality of quantum wells having a plurality of irregular and high and low undulating shapes formed on the first semiconductor conductive layer; a second semiconductor conductive layer formed on the active layer a transparent conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein the plurality of particles formed by the at least one heterogeneous material are dispersed in the first a semiconductor conductive layer and the active layer, whereby the multilayer quantum well having a plurality of irregular and high and low undulating shapes is formed. 27. An optical communication system using a light emitting diode as a light source, comprising: a light emitting module, a signal generating module, a fiber optic network transmission channel, and at least one light receiving module; wherein the light emitting mode The package includes a plurality of light emitting diode elements or a package structure of the aeronautical diode element, the light emitting diode element comprising: a substrate, a first semiconductor conductive layer formed on the substrate; a first electrode Forming on one side of the first semiconductor layer; - an active layer 'on the other side of the first semi-conductive material layer, having a plurality of multi-layer quantum wells with irregular and high and low undulating shapes; - second a semiconductor conductive layer formed on the active layer; a transparent conductive layer 'on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein 'at least one heterogeneous material The plurality of formed particles are interspersed between the first semiconductor conductive layer 28 1345040 and the active layer, thereby forming a quantum well. Forming the light-emitting diode lamp having a plurality of financial weights and having a height and a low frequency. The light-emitting diode lamp comprises: a casing having a joint at one end; and a circuit substrate housed in the casing and provided with a pair An electrode and a plurality of light emitting diode elements or a package structure of the light emitting diode element; wherein the joint is operatively coupled to an external lamp socket and is electrically connected to a pair of electrodes; characterized by a light emitting diode element Included as a first electrode; a substrate formed on the first electrode; a first semiconductor conductive layer formed on the substrate; an active layer to have a plurality of layers of irregular and high and low undulating shapes a quantum well is formed on the first semiconductor conductive layer; a second semiconductor conductive layer is formed on the active layer; a transparent conductive layer is formed on the second semiconductor conductive layer; and a second electrode Formed on the transparent conductive layer; wherein a plurality of particles formed by at least one heterogeneous material are interspersed between the first semiconductor conductive layer and the active layer, thereby Into the irregular and has a plurality of multiple quantum well layers of undulating shape. 29. A light-emitting diode lamp comprising: a housing having a connector at one end; and a circuit substrate 'accommodating in the housing, providing a pair of electrodes and a plurality of light emitting diode elements or the light emitting diode a package structure of a polar body component; wherein the connector is operatively coupled to an external lamp socket and is electrically connected to a pair of electrodes of the circuit substrate; wherein the light emitting diode component comprises a substrate; 29 1345040 a semiconductor conductive layer ′ is formed on the substrate; a first electrode is formed on one side of the first semiconductor layer; and an active layer is formed on the other side of the first semiconductor conductive layer, and has a plurality of a plurality of quantum wells having a regular high and low undulating shape; a second semiconductor conductive layer 'on top of the active layer; a transparent conductive layer ' formed on the second semiconductor conductive layer; and a second electrode formed on the Above the transparent conductive layer; wherein a plurality of particles formed by the at least one heterogeneous material are interspersed between the first semiconductor conductive layer and the active layer, thereby forming The irregular and has a plurality of multiple quantum well layers of undulating shape. 30. A vehicular lamp having a light-emitting diode as a light source comprises at least a hollow housing and a translucent cover disposed in an open window of the housing, wherein the housing has a lamp holder, a circuit board and a plurality of light emitting diode elements or a package structure of the light emitting diode element is disposed on the lamp holder; wherein the light emitting diode element comprises a first electrode; a substrate formed on the first electrode; a first semiconductor conductive layer formed on the substrate; an active layer formed on the first semiconductor conductive layer by a plurality of quantum wells having a plurality of irregular and high and low undulating shapes; a second semiconductor conductive layer, Formed on the active layer; a transparent conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein the plurality of at least one heterogeneous material is formed The particles are interspersed between the first semiconductor conductive layer and the active layer, thereby forming the multilayer quantum well having a plurality of irregular and high and low undulating shapes. 31. A vehicle lamp using a light-emitting diode as a light source, comprising at least a hollow housing and a translucent lamp cover disposed in the open window of the 30 1345040-seat, and having a lamp holder ... a circuit board And a plurality of light emitting diode elements or a package structure of the light emitting diode element is disposed on the lamp socket; wherein the light emitting diode element comprises: a substrate; a first semiconductor conductive layer 'is formed on the substrate a first electrode formed on one side of the first semiconductor layer; an active layer 'on the other side of the first semiconductor conductive layer, having a plurality of multi-layer quantum wells with irregular and high and low undulating shapes a second semiconductor conductive layer 'formed on the active layer; a transparent conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein a plurality of particles formed by the heterogeneous material are interspersed between the first semiconductor conductive layer and the turbulent layer, thereby forming the plurality of layers having a plurality of irregularities and high and low undulations Child well. 32. A traffic light lamp having a light-emitting diode as a light source, comprising a hollow casing, a light-emitting lamp cover disposed on one side is disposed in the open window; and a light source module is disposed in the hollow casing ^ a plurality of different wavelengths of the light emitting diode element or the light emitting diode element of the two components: and - (four) circuit, disposed in the flip and connected to the light ray group, 俾 control * illuminating - pole ns A part or a full *pottery & color or a single color is present in the light (4). The light-disposing element comprises: an eight-first-first electrode; a substrate 'formed on the first electrode; [The body conductive layer is formed on the substrate; the layer [u] has a plurality of irregular and high and low undulating shape of the plurality of quantum wells formed on a semiconductor conductive layer; the non-second semiconductor conductive layer is formed on the Above the active layer; 31 1345040 a transparent conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein - at least a plurality of heterogeneous materials are formed Particles are dispersed in the first semi-conductive Between the body conductive reed and the active layer, thereby forming the shape of the plurality of unrecognized and purchased volts: - a layer quantum well.夕3:3_ The total number of traffic lights with illuminating-polar body as the light source, including a hollow casing, - side is provided - an open window; - a translucent lampshade is arranged in the open window; a light source module Provided in the body, comprising a plurality of different wave light emitting diode elements or the light emitting diodes; and a control loop is disposed in the housing and connected to the light source module, The light source module has at least one light emitting diode element including: a substrate; a first semiconductor conductive layer formed by the light source module having a portion or all of the light color or a single color On the substrate; a first electrode formed on one side of the first semiconductor layer; - an active layer 'on the other side of the first semi-conductive material layer, having a plurality of irregularities and heights a multilayer quantum well having an undulating shape; a first semiconductor conductive layer 'formed on the active layer; a transparent conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive Above the layer; 'At least - a plurality of kinds of fine particles of heterogeneous material formed on the second spread - between the conductive layer and the semiconductor active layer' thereby forming the irregular and has a plurality of undulating shape; and a quantum well layer. 34. - Kind of Qiguang 2 _ silk _ line although secret, the main money in the - through the protective shell inside the housing - solar panels, a charging circuit storage device, an automatic lighting circuit and a light source module, which Sun record Set (10) through the inside of the health, convert the basin into electrical energy by doing domain energy, and charge the battery through the charging circuit. The automatic lighting circuit is connected to the 32 3245040 solar charging circuit and installed in the housing. The light source module further illuminates the light source module, wherein the light source group comprises a light emitting module comprising a plurality of light emitting diode elements or a package structure of the light emitting diode element, the light emitting diode The body element includes a first electrode; a substrate formed on the first electrode; a first semiconductor conductive layer formed on the substrate; an active layer to have a plurality of layers of irregular and high and low undulating shapes a quantum well is formed on the first semiconductor conductive layer; a second semiconductor conductive layer is formed on the active layer; a transparent conductive layer is formed on the second semiconductor conductive layer; and a a second electrode formed on the transparent conductive layer; wherein a plurality of particles formed by the at least one heterogeneous material are interspersed between the first semiconductor conductive layer and the active layer, thereby forming the plurality of irregularities Multi-layer quantum wells in the shape of high and low undulations. 35· - A traffic lane indicator light with a light-emitting diode as a light source, mainly installed in a transparent protective casing - a solar panel, a charging circuit, an electrical storage device, an automatic lighting circuit and a light source module. The solar panel is mounted on the transparent housing, and is converted into electric energy by Wei solar energy and charges the electric storage device through a charging circuit. The auto-lighting circuit is connected to the solar charging circuit and installed in the solar charging circuit. a light source module in the housing, wherein the light source module emits light; wherein the light source module comprises the light source module comprising a plurality of light emitting diode elements or a package structure of the light emitting diode element, The light emitting diode element includes a substrate; a first semiconductor conductive layer formed on the substrate; a first electrode formed on one side of the first semiconductor layer; and an active layer formed on the first semiconductor a multilayer quantum well having a plurality of irregular and high and low undulating shapes on the other side of the conductive layer; 33 1345040 a second semiconductor conductive layer formed on the active layer; a transparent guide a layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein 'a plurality of particles formed by at least one heterogeneous material are dispersed in the first semiconductor conductive layer and the Between the active layers, thereby forming the multilayer quantum well having a plurality of irregular and high and low undulating shapes. 36. A traffic marking device using a light-emitting diode as a light source, comprising at least one building body and at least one marking body disposed on the supporting body, wherein the marking body comprises: a light box, which is set to a predetermined size The light-transmissive surface is disposed on the light-transmissive surface of the light box, and the surface thereof is provided with a predetermined text or pattern; a light source module is accommodated in the light box and oriented at a predetermined distance The light-transmissive panel is projected from the inside to the outside to make the indicator bright; and a power supply device for supplying power required by the light source modules; wherein the light source module comprises a plurality of light-emitting diode elements or The package structure of the LED component includes: a first electrode; a substrate ' formed on the first electrode; a first semiconductor conductive layer formed on the substrate; The active layer is formed on the first semiconductor conductive layer by a plurality of thin wells having a high and low domain shape; a second semiconductor conductive layer is formed on the active layer; - transparent a conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein 'at least one heterogeneous material is formed by a plurality of particles dispersed in the first semiconductor conductive layer Between the and the active layers of the hai, thereby forming the multi-layer quantum well having a plurality of irregularities and high and low undulations. 34 1345040, and at least 37. A traffic signing device using a light-emitting diode as a light source, comprising at least one support body and a mark body disposed on the support body, wherein the mark body comprises: a light box, which is of a predetermined size The light-emitting surface has a light-transmissive surface--transparent panel disposed on the light-transmitting wire of the light box, and the surface is printed with a text or a graphic; the light source module is accommodated in the light box and faces the predetermined distance a light transmissive panel, which is projected by the inner = projection to make the indicator bright; and a power supply device for supplying power required by the light source modules. The diode element is characterized in that the light source module comprises a plurality of light emitting diodes a body element or the illuminating package structure, the illuminating diode element comprising: 一基板; 一第一半導體導電層,形成於該基板之上; 一第一電極’形成於該第一半導體層上之—側; -主動層,形成於該第-半導體導電層上之另_側,具有複數個不規則且 高低起伏形狀的多層量子井; 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 38. —種以發光二極體為光源的數位電子裝置,係選自於由影印機 '掃描機、 傳真機、辦公室多工事務機、液晶電視' 電子廣告看板、電子遊樂器、個 人數位助理(PDA)、及行動通訊裝置所組成群組之其中之一,該數位電子梦 置具有一光源模組以長·供顯示器之光源,該光源模組包含有複數個發光二 極體元件或該發光二極體元件之封裝結構;其特徵在於該發光二極體元件 包括: 35 1345040 一第一電極; 一基板,形成於該第一電極之上; 一第一半導體導電層’形成於該基板之上; 一主動層’以具有複數個不規則且高低起伏形狀的多層量子井形成於該第 一半導體導電層之上; 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少一種異質材料所形成之複數個微粒散佈於該第一半導體導電層 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。 39. —種以發光二極體為光源的數位電子裝置,係選自於由影印機、掃描機、 傳真機、辦公室多工事務機、液晶電視、電子廣告看板、電子遊樂器、個 人數位助理(PDA)、及行動通訊裝置所組成群組之其中之一,該數位電子裝 置具有一光源模組以提供顯示器之光源,該光源模組包含有複數個發光二 極體元件或該發光二極體元件之封裝結構;其特徵在於該發光二極體元件 包括: 一基板; 一第一半導體導電層’形成於該基板之上; 一第一電極,形成於該第一半導體層上之一侧; -主動層’形成於該第-半導體導電層上之另—側,具有複數個不規則且 高低起伏形狀的多層量子井; 一第二半導體導電層,形成於該主動層之上; 一透明導電層,形成於該第二半導體導電層之上;以及 一第二電極,形成於該透明導電層之上; 其中,至少-種異質材料所形成之複數個微粒散佈於該第—半導體導電層 36 1345040 與該主動層之間,藉此,形成該具有複數個不規則且高低起伏之形狀的多 層量子井。a substrate; a first semiconductor conductive layer formed on the substrate; a first electrode 'on the side of the first semiconductor layer; - an active layer formed on the first semiconductor conductive layer a multilayer quantum well having a plurality of irregular and high and low undulating shapes; a second semiconductor conductive layer formed on the active layer; a transparent conductive layer formed on the second semiconductor conductive layer; and a first a second electrode formed on the transparent conductive layer; wherein a plurality of particles formed by the at least one heterogeneous material are interspersed between the first semiconductor conductive layer and the active layer, thereby forming the plurality of irregularities Multi-layer quantum wells in the shape of high and low undulations. 38. A digital electronic device using a light-emitting diode as a light source, selected from a photocopying machine 'scanner, fax machine, office multiplex machine, LCD TV' electronic advertising billboard, electronic game instrument, personal digital assistant One of the group of (PDA) and mobile communication devices, the digital electronic dream device has a light source module for the light source of the display, the light source module includes a plurality of light emitting diode elements or the a package structure of a light-emitting diode element; wherein the light-emitting diode element comprises: 35 1345040 a first electrode; a substrate formed on the first electrode; a first semiconductor conductive layer ' formed on the substrate Above; an active layer 'on a plurality of quantum wells having a plurality of irregular and high and low undulating shapes formed on the first semiconductor conductive layer; a second semiconductor conductive layer formed on the active layer; a transparent conductive a layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein at least one heterogeneous material is formed A plurality of particles are interspersed between the first semiconductor conductive layer and the active layer, thereby forming the multi-layer quantum well having a plurality of irregular and high and low undulating shapes. 39. A digital electronic device using a light-emitting diode as a light source, selected from a photocopying machine, a scanner, a fax machine, an office multiplex machine, a liquid crystal television, an electronic advertising billboard, an electronic game instrument, and a personal digital assistant. One of a group of (PDA) and mobile communication devices, the digital electronic device having a light source module for providing a light source of the display, the light source module comprising a plurality of light emitting diode elements or the light emitting diode The package structure of the body element; wherein the light emitting diode element comprises: a substrate; a first semiconductor conductive layer 'on the substrate; a first electrode formed on one side of the first semiconductor layer An active layer 'formed on the other side of the first-semiconductor conductive layer, having a plurality of irregular quantum ridge shapes; a second semiconductor conductive layer formed on the active layer; a conductive layer formed on the second semiconductor conductive layer; and a second electrode formed on the transparent conductive layer; wherein, at least - a heterogeneous material A plurality of formed particles are interspersed between the first semiconductor conductive layer 36 1345040 and the active layer, thereby forming the multi-layer quantum well having a plurality of irregular and high and low undulating shapes.
TW96131342A 2007-05-16 2007-08-24 Led package and applications of led as light source TWI345040B (en)

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