NVT-2007-060 25609twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種驅動器，且特別是有關於一種可 兼顧驅動效率和靜電放電耐受能力的驅動器。 【先前技術】 近年來，隨著趨勢的演變，運用在液晶螢幕中之源極 驅動器（source driver)的體積不斷地縮小，然而其電路性能 和靜電放電(Electrostatic Discharge ’以下簡稱ESD)的耐壓 要求卻不斷地提高。由於源極驅動器係以CMOS積體電路 的方式來呈現，而一般在CMOS積體電路中，可用來做 E S D防護的元件主要有電阻、二極體、金氧半導體元件(例 如NMOS電晶體或PMOS電晶體）及厚氧化層元件 (field-oxide device) ’因此上述這些元件通常被用來設計組 合成各式各樣的靜電放電防護電路。在這些元件中，由於 電阻具有阻擋電流的能力，因此經常與其他的元件共同使 用’以提升該元件的ESD耐受能力c 圖1繪示傳統源極驅動器的部分電路示意圖。請參照 圖卜一其中仏7F 100即為源極驅動器。於虛線1〇2的左邊 係=示源極驅動器⑽之類比輪出部分的架構，也就是核 j路’而於虛線1()2的右邊係顯示靜電放電防護電路的 架構。類比輸出部分是由伽碼電阻分壓器(Gamma resistor rr=ividei：)、數位類比轉換器 '運算放大器、輸出開 關(如104所示)及電荷分享開關(如所示)所組成，而靜 NVT-2007-060 25609twf.doc/n 電放電防護電路則是由電阻(如1〇8所示)及二極體(如ii〇 所示)所組成。當耗接至源極驅動器内部的烊塾(如112 及所示)遭受ESD轟擊時，靜電放電防護電路中的電 阻便可以限制流到輸出開關和電荷分享開關的電流，且電 ^的阻值越大，哺ESD錢的能力就馳，而源極驅動 =〇〇的ESD耐受能力賴好。然而，靜·電防護電路 中電阻(如108所示）的阻值越大，源極駆動器100的驅動 效率就會越差。 1^由於上述輸出開關和電荷分 M〇S電晶體來實現，因而當這些開關的尺寸越大H E奶電流的面積就越大，於是咖的耐受:j 需要的靜元件財越大，其所 雷,、D電阻(也就疋靜電放電防護電路中的 =二便提咖 由於達成目標ESD耐 的擺置方式可知， 元件尺寸較小者所決匕力：：要的電阻大小是由開關 大者的驅動效率。、^會犧牲開關元件尺寸較 【發明内容】 本發明的目的就是 一 。。 率和靜電放電耐受能力 $動③，其可兼顧驅動效 基於上述及其他 括第一通道驅動單元 的本發明提出-種驅動器，苴包 、苐二通道㈣單元、第—树’、、第 NVT-2007-060 25609twf.doc/n 元ΐ、電荷分享開關及第一靜電防護單元。 第1耦接至第一通道驅動單元之輪出端。第 二兀件之弟-雜接至第—元件H，而第二元件之 第二端耦接至第一焊墊。第三元件耦接至第 端。^荷分享開關之第一端經由第三元件與第-元件ί接 ，第-通道驅動早元之輸出端，而電荷分享開關之第二端 轉接至第二通道驅動單元之輸㈣。第 接於第-焊塾與第一電源軌線之間 ：蔓 二元件與第三元件三者之中至少二元件為』元二、第 勺括Γΐ·ϊίί他目的’本發明另提出一種觸動器，其 包括弟-通伽動單元、第二通道觸單元、第 阻、電荷分享開關及第—靜電防護單元。 二電阻之第一繼至第一電阻之第二端，而第 第-端祕至第-焊墊。第三電阻祕至第—電阻 端:電荷分享開關之第-端經由第三電阻與第—電阻祕 主弟1道驅動單元之輸出·端，而電荷分享開關之 耦接至第二通道驅動單元之輸出端。第一靜電防 了 接於第一焊墊與第一電源軌線之間。 早70NVT-2007-060 25609twf.doc/n IX. Description of the Invention: TECHNICAL FIELD The present invention relates to a driver, and more particularly to a driver that can achieve both drive efficiency and electrostatic discharge withstand capability. [Prior Art] In recent years, as the trend has evolved, the size of the source driver used in the liquid crystal screen has been continuously reduced, but its circuit performance and electrostatic discharge (Electrostatic Discharge 'ESD) have withstand voltage. The requirements are constantly improving. Since the source driver is presented in the form of a CMOS integrated circuit, generally in a CMOS integrated circuit, components that can be used for ESD protection mainly include resistors, diodes, and MOS devices (such as NMOS transistors or PMOS devices). Transistors) and field-oxide devices 'These these components are therefore commonly used to design a combination of various ESD protection circuits. Among these components, since the resistor has the ability to block current, it is often used together with other components to improve the ESD tolerance of the component. Figure 1 shows a partial circuit diagram of a conventional source driver. Please refer to Fig. 1 for the 仏7F 100 as the source driver. On the left side of the dotted line 1〇2, the structure of the analog wheel driver (10) is shown as the structure of the wheeled portion, that is, the core j path', and the structure of the electrostatic discharge protection circuit is shown on the right side of the broken line 1 ()2. The analog output section consists of a gamma resistor divider (Gamma resistor rr=ividei:), a digital analog converter 'operational amplifier, an output switch (shown as 104), and a charge-sharing switch (shown), while the static NVT -2007-060 25609twf.doc/n The electric discharge protection circuit consists of a resistor (as shown in Figure 8) and a diode (such as ii〇). When the 耗 (such as 112 and shown) that is drained inside the source driver is subjected to ESD bombardment, the resistance in the ESD protection circuit can limit the current flowing to the output switch and the charge sharing switch, and the resistance of the voltage The greater the ability to feed ESD money, the more the source drive = ES ESD tolerance. However, the greater the resistance of the resistor (shown as 108) in the static and electric protection circuit, the worse the drive efficiency of the source actuator 100. 1^Because the above output switch and charge sub-M〇S transistor are realized, when the size of these switches is larger, the area of the HE milk current is larger, so the tolerance of the coffee: j requires more static components, Thunder, and D resistance (also 疋 疋 疋 = = = = = = = = = = = = = 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖The drive efficiency of the larger ones, and the size of the switch components are sacrificed. [Inventive content] The object of the present invention is one. Rate and electrostatic discharge withstand capability $3, which can take into account the driving effect based on the above and other first channels The invention of the driving unit proposes a driver, a package, a second channel (four) unit, a first tree, an NVT-2007-060 25609twf.doc/n element, a charge sharing switch and a first electrostatic protection unit. 1 is coupled to the wheel-out end of the first channel driving unit. The second component is coupled to the first component H, and the second terminal is coupled to the first bonding pad. The third component is coupled To the first end. The first end of the ^ sharing switch is via the first The three components are connected to the first component, the first channel drives the output of the early element, and the second end of the charge sharing switch is switched to the output of the second channel driving unit (four). The first device is connected to the first power pad and the first power source. Between the trajectories: at least two of the two components of the vine and the third component are the second element, and the second component of the trajectory is the second embodiment of the present invention. The present invention further provides an actuator including a brother-passing unit, The second channel touch unit, the thyristor, the charge sharing switch and the first electrostatic protection unit. The first of the two resistors is connected to the second end of the first resistor, and the first end is the first to the first pad. To the first-resistive end: the first end of the charge sharing switch is connected to the output end of the driving unit of the first circuit via the third resistor and the first resistor, and the charge sharing switch is coupled to the output end of the second channel driving unit. The first static electricity is prevented from being connected between the first bonding pad and the first power trajectory.
本發明因在驅動器中採用電阻來奥援靜電放 ▲ =，並利狀變電阻雜值和擺置方式，使得= 兼顧驅動效率和靜電放電耐受能力。 J NVT-2007-060 25609twf.doc/i 為讓本發明之上述和其他目的、特徵和優點能 易懂，下文特舉較佳實施例，並配合所附圖式 : 明如下。 叶、.田5兄 【實施方式】 、為了枝與傳統源極驅動器進行對照與比較，以 述之驅動态皆以源極驅動器來舉例，然這樣的例舉方 非用以限定本發明。 >、 圖2為依照本發明一實施例之驅動器的方塊圖。請參 照圖2，其中標示2〇〇即為驅動器，而驅動器2〇〇包括有 通道驅動單元210及220、元件232〜242、電荷分享開關 =50及靜電防護單元262〜268。此外，VDD表示為電源電 壓’ vss表示為共同電位’標示272〜278冑表示為電源軌 線’而標示282及284皆表示為焊墊。 由於驅動态200係為源極驅動器，故通道驅動單元21〇 内部可包括有數位類比轉換器212、運算放大器214及開 關216。數位類比轉換器2i2用以依據多個參考電壓將數 位訊號DATA—ODD轉換成類比訊號，運算放大器214負 責增強數位類比轉換器212所輸出之類比訊號的驅動能 力，而開關216的其中一端作為通道驅動單元21〇之輸出 端’用以決定是否輸出從運算放大器214傳來的訊號β其 中運算放大器214係作為驅動能力之增強用，可依照實際 的需要而決定是否採用。至於通道驅動單元220 ’其内部 可包括有數位類比轉換器222、運算放大器224及開關 NVT-2007-060 256〇9twf.doc/j 226 "數位類比轉換器222、運算放大器224及開關226的 運作原理分別和數位類比轉換器212、運算放大器214及 開關216的運作原理相同，只是數位類比轉換器222係接 收數位訊號DATA_EVEN。 此外’驅動器200還包括有伽瑪電阻分壓器290，其 用以接收多個伽瑪電壓VG广VGN ’並據以產生通道驅動單 元210及220所需之參考電壓。在此實施例中，電荷分享 開關250、開關216及226皆以MOS電晶體來實現，元件 232、236、238及242都是阻抗元件，且皆以電阻來實現， 而元件234及240皆以導線來實現。至於靜電防護單元 262〜268，則皆以二極體來實現。上述這些構件的耦接關 係皆已展現於圖示中’在此便不再贅述。藉由這些二極體 的耦接方式可知，電源軌線2 72及276皆為系統電壓軌線， 而電源軌線274及278皆為接地電壓軌線。 請同時參照圖1及圖2，經比較後可發現二者的差別 在於，圖2中之電阻的配置方式不同於圖1中之電阻的配 置方式。請繼續參照圖2，如圖所示，從焊墊282到電荷 分享開關250之間具有元件236,而從焊墊282到開關216 之間具有元件232。因此，元件236的阻值可根據電荷分 享開關250的ESD耐受能力來調整，而元件232的阻值可 根據開關216的ESD耐受能力來調整。同理，從焊墊284 到電荷分享開關250之間具有元件242，而從焊塾284到 開關226之間具有元件238。因此，元件242的阻值可根 NVT-2007-060 25609twf.doc/n 據電荷分享開關25_咖耐受能力來調整，而元件^ 的阻值可根據開關226的ESD耐受能力來調整。 舉例來說’假設其中作為電荷分享開關，之M〇s 電晶體的元件尺寸大於作為開關216之M〇s電晶體的元 件尺寸’因此電荷分享開關250的咖耐受能力較開關 加的⑽耐受能力來得好，那麼元件236的阻值就可以 設定成小於元件232的阻值。反之，若作為電荷分享開關 25〇之MOS電晶體的元件尺寸小於作為開關加之臓 電晶體的元件尺寸，因此電荷分享開關祝的励财受能 力較開關2㈣ESD耐受能力來得差，那麼元件说的阻 值就可以設定成大於元件232的阻值。同理，元件238與 242二者之阻值的設定方式，也可以按照電荷分享開關⑽ 與開關226 =者的ESD耐受能力而定。如此一纟，便可兼 顧驅動器200的驅動效率和靜電放電耐受能力。 圖3為依照本發明另一實施例之驅動器的方塊圖，盆 中標示即為鶴器。請同時參關2及圖3，經狐 較之後可以發現二者的不同之處在於，圖3中之電阻的配 置方式不同於圖2中之電阻的配置方式。也就是說，圖3 中之兀件234及240係以電阻來實現，而元件236及242 係以導線來實現。假設電荷分享開關25G、開關216及^ 亦以MOS電晶體來實現，那麼當作為電荷分享開關⑽ 之MOS電晶體的元件尺寸大於作為開關216之M〇s電晶 體的元件尺寸時，電荷分享開關25〇的哪财受能力較開 關216的ESD耐雙能力來得好，所以從焊墊282到電荷分 NVT-2007-060 25609twf.doc/n 享開關250之間只有一個電阻，而從焊塾282到開關2i6 之間卻有二個電阻。同理，從焊塾2 84到電荷分享開關， 之間只有-個電阻’而從焊墊284到開關226之間卻有二 個電阻。 圖4為依照本發明再一實施例之驅動器的方塊圖，其 中標不働即為驅動II。請同時參照圖2及圖4，經過比 較之後可以發現二者的不同之處在於，圖4中之電阻的配 置方式亦不同於@ 2中之電阻的配置方式。也就是說，圖 4/中之το件234及240係以電阻來實現，而元件232及238 係以導線來實現。假設電荷分享開關25〇、開關216及226 亦以MOS電晶體來實現，那麼當作為電荷分享開關25〇 之MOS電晶體的元件尺寸小於作為開關2162M〇s電晶 體的元件尺寸時’電荷分享開關2 5 0的E S D耐受能力較開 關216的ESD耐受能力來得差，所以從焊墊282到電荷分 享開關250之間有二個電阻，而從焊墊282到開關216之 間只有一個電阻。同理，從焊墊284到電荷分享開關25〇 之間有二個電阻，而從焊墊284到開關226之間只有一個 電阻。 藉由上述之教示，還可再延伸出一種驅動器的實現方 式，如圖5所示。圖5為依照本發明又另一實施例之驅動 器的方塊圖，其中標示500即為驅動器。請同時參照圖2 及圖5，經過比較之後可以發現二者的不同之處在於，圖5 中之元件232〜242皆以電阻來實現。這些元件之阻值的設 定方式可以參照前述實施例，在此便不再贅述。 1342612 NVT-2007-060 25609twf.d〇c/n 雖然上述各實施例之驅動器皆以源極驅動器來舉例 說明，且在各驅動器中皆僅列舉出二個通道驅動單元’然 而擴展來說，其他具有二個以上之通道驅動單元的驅動 益’只要在驅動器中有運用到電荷分享開關，便可依照上 述各實施例所述之方式來製作靜電放電防護電路’以兼顧 驅動益的驅動效率和靜電放電耐受能力。當然，若是應用 本發明的驅動器並非是源極驅動器，那麼通道驅動單元内 部的實現方式便可能會有所不同，且驅動器也可能不需要 伽瑪電阻分壓器。此外’在上述說明中，每個通道驅動單 元皆有使用到電阻來做靜電放電保護，然熟習此技藝者應 ^知道’即使只有单一個通道驅動單元使用到電阻來做靜 電放電保護，同樣也可以實施。以圖2來舉例，若是元件 232〜236的實現方式不變，而元件238〜242皆以導線來實 現，這樣的驅動器亦在本發明的保護範圍之内。以圖5來 舉例’若是元件232〜236的實現方式不變’而元件238〜242 皆以導線來實現，這樣的驅動器同樣在本發明的保護範圍 之内。 值得一提的是，在上述各實施例中，靜電防護單元 262〜268並非限定於以二極體來實現，事實上，這些靜電 防°蔓早元亦可以採用其他的方式來實現，例如以M〇s電 晶體來實現，如圖6所示。圖6為以MOS電晶體來實現 靜電防護單元的說明圖。請參照圖6 ’其中標示6〇2及6〇4 皆為電源軌線，且電源軌線6〇2為系統電壓軌線，而電源 軌線604為接地電壓執線。標示606及608皆為靜電防護 12 1342612 NVT-2007-060 256〇9twf.doc/i 單疋’而標示610則為焊墊。靜電防護單元6〇6係以pM〇s 電晶體來實現，而靜電防護單元6〇8係以nm〇S電晶體來 實現’且PMOS電晶體的閘極耦接到電源軌線6〇2，NM〇s 電晶體的閘極則耦接到電源軌線604,因而呈現出二個二 極體連接式的MOS電晶體，以作為靜電放電防護之用。 此外，以上所有以MOS電晶體來實現的構件，亦可以其 . 他形式之電晶體來實施。 • 綜上所述，本發明因在驅動器中採用電阻來奥援靜電 放電保護功能，並利用改變電阻的阻值和擺置方式，使得 驅動器可兼顧驅動效率和靜電放電耐受能力。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為傳統源極驅動器的部分電路示意圖。 圖2為依照本發明一實施例之驅動器的方塊圖。 圖3為依照本發明另一實施例之驅動器的方塊圖。 圖4為依照本發明再一實施例之驅動器的方塊圖。 圖5為依照本發明又另一實施例之驅動器的方塊圖。 圖6為以MOS電晶體來實現靜電防護單元的說明圖。 【主要元件符號說明】 13 1342612 NVT-2007-060 25609twf.doc/n 100 :源極驅動器 102 :虛線 104 :輸出開關 106、250 :電荷分享開關 108 :電阻 - 110 :二極體 112、114、282、284、610 :焊墊 I 200、300、400、500 :驅動器 210、220 :通道驅動單元 212、222 :數位類比轉換器 214、224 :運算放大器 216、226 :開關 232〜242 :元件 262〜268、606、608 :靜電防護單元 272〜278、602、604 :電源轨線 290 :伽瑪電阻分壓器 # DATA—EVEN、DATA_ODD :數位訊號 VDD :電源電壓 Vg广Vgn ·伽瑪電壓 VSS :共同電位 14The invention adopts a resistor in the driver to discharge the static electricity ▲ =, and the variable resistance and the arrangement manner of the resistor, so that the driving efficiency and the electrostatic discharge withstand capability are taken into consideration. The above and other objects, features, and advantages of the present invention will be apparent from the description of the appended claims. Ye, Tian 5 brother [Embodiment] In order to compare and compare the traditional source driver with the conventional source driver, the driving states are all exemplified by the source driver, and such an example is not intended to limit the present invention. > Figure 2 is a block diagram of a driver in accordance with an embodiment of the present invention. Referring to Fig. 2, the symbol 2 is the driver, and the driver 2 includes the channel driving units 210 and 220, the components 232 to 242, the charge sharing switch = 50, and the electrostatic protection units 262 to 268. In addition, VDD is expressed as a power supply voltage ' vss is expressed as a common potential' and 272 to 278 is indicated as a power supply line ' and both signs 282 and 284 are represented as pads. Since the driving state 200 is a source driver, the channel driving unit 21A can internally include a digital analog converter 212, an operational amplifier 214, and a switch 216. The digital analog converter 2i2 is configured to convert the digital signal DATA_ODD into an analog signal according to a plurality of reference voltages, and the operational amplifier 214 is responsible for enhancing the driving capability of the analog signal output by the digital analog converter 212, and one end of the switch 216 is used as a channel. The output terminal ' of the driving unit 21' is used to determine whether to output the signal β transmitted from the operational amplifier 214, wherein the operational amplifier 214 is used as an enhancement of the driving capability, and can be determined according to actual needs. As for the channel driving unit 220', the digital analog converter 222, the operational amplifier 224, and the switches NVT-2007-060 256〇9twf.doc/j 226 "the digital analog converter 222, the operational amplifier 224, and the switch 226 may be included therein. The operation principle is the same as that of the digital analog converter 212, the operational amplifier 214 and the switch 216, respectively, except that the digital analog converter 222 receives the digital signal DATA_EVEN. In addition, the driver 200 further includes a gamma resistor divider 290 for receiving a plurality of gamma voltages VG wide VGN' and thereby generating reference voltages required by the channel driving units 210 and 220. In this embodiment, the charge sharing switch 250, the switches 216 and 226 are all implemented by MOS transistors, and the components 232, 236, 238 and 242 are all impedance elements, and both are implemented by resistors, and the components 234 and 240 are all Wire to achieve. As for the electrostatic protection units 262 to 268, they are all realized by diodes. The coupling of these components has been shown in the drawings and will not be described again here. According to the coupling manner of the diodes, the power rails 2 72 and 276 are system voltage rails, and the power rails 274 and 278 are ground voltage rails. Please refer to FIG. 1 and FIG. 2 at the same time. After comparison, it can be found that the difference between the two is that the arrangement of the resistors in FIG. 2 is different from the configuration of the resistors in FIG. With continued reference to FIG. 2, as shown, there is an element 236 between the pad 282 and the charge sharing switch 250, and an element 232 is provided between the pad 282 and the switch 216. Thus, the resistance of element 236 can be adjusted based on the ESD tolerance of charge sharing switch 250, and the resistance of element 232 can be adjusted based on the ESD tolerance of switch 216. Similarly, element 242 is provided between pad 284 and charge sharing switch 250, and element 238 is provided between pad 284 and switch 226. Therefore, the resistance of the component 242 can be adjusted according to the charge sharing switch 25_coffee tolerance, and the resistance of the component ^ can be adjusted according to the ESD tolerance of the switch 226. For example, 'assuming that the element size of the M〇s transistor as a charge sharing switch is larger than the element size of the M〇s transistor as the switch 216', the charge-tolerance capability of the charge-sharing switch 250 is higher than that of the switch (10). The ability of the component 236 can be set to be less than the resistance of the component 232. On the other hand, if the component size of the MOS transistor as the charge sharing switch 25 is smaller than the component size of the transistor as the switch plus the transistor, the charge sharing switch is better than the switch 2 (four) ESD withstand capability, then the component says The resistance can be set to be greater than the resistance of component 232. Similarly, the resistance values of the components 238 and 242 can also be set according to the ESD tolerance of the charge sharing switch (10) and the switch 226 =. In this way, the driving efficiency and electrostatic discharge withstand capability of the driver 200 can be achieved. Fig. 3 is a block diagram of a driver in accordance with another embodiment of the present invention, the indicator in the basin being a crane. Please refer to both 2 and Figure 3. The difference between the two can be found in the following. The configuration of the resistor in Figure 3 is different from the configuration of the resistor in Figure 2. That is, the elements 234 and 240 in Figure 3 are implemented as resistors, while the components 236 and 242 are implemented as wires. Assuming that the charge sharing switch 25G, the switches 216 and ^ are also implemented by MOS transistors, when the element size of the MOS transistor as the charge sharing switch (10) is larger than the element size of the M?s transistor as the switch 216, the charge sharing switch The 25-inch profitability is better than the ESD resistance of the switch 216, so there is only one resistor from the pad 282 to the charge sub-NVT-2007-060 25609twf.doc/n switch 250, and from the soldering 282 There are two resistors between the switches 2i6. Similarly, there is only one resistor between the solder fillet 2 84 and the charge sharing switch, and there are two resistors from the pad 284 to the switch 226. Fig. 4 is a block diagram of a driver in accordance with still another embodiment of the present invention, the standard of which is the drive II. Please refer to FIG. 2 and FIG. 4 at the same time. After comparison, the difference between the two is that the configuration of the resistor in FIG. 4 is different from the configuration of the resistor in @2. That is to say, the components 234 and 240 of Fig. 4/ are realized by resistors, and the components 232 and 238 are realized by wires. Assuming that the charge sharing switch 25A, the switches 216 and 226 are also implemented by MOS transistors, when the element size of the MOS transistor as the charge sharing switch 25 is smaller than the size of the element as the switch 2162M〇s transistor, the charge sharing switch The ESD tolerance of 205 is worse than the ESD tolerance of switch 216, so there is two resistors from pad 282 to charge sharing switch 250, and there is only one resistor from pad 282 to switch 216. Similarly, there is two resistors from pad 284 to charge sharing switch 25A, and there is only one resistor from pad 284 to switch 226. With the above teachings, an implementation of a driver can be further extended, as shown in FIG. Figure 5 is a block diagram of a driver in accordance with yet another embodiment of the present invention, wherein the designation 500 is the driver. Please refer to FIG. 2 and FIG. 5 at the same time. After comparison, it can be found that the difference between the two is that the components 232 to 242 in FIG. 5 are realized by resistors. The setting of the resistance values of these components can be referred to the foregoing embodiment, and will not be described herein. 1342612 NVT-2007-060 25609twf.d〇c/n Although the drivers of the above embodiments are all exemplified by source drivers, and only two channel drive units are listed in each driver's. Drive Benefits with More Than Two Channel Drive Units As long as a charge sharing switch is used in the driver, the ESD protection circuit can be fabricated in the manner described in the above embodiments to achieve drive efficiency and static electricity. Discharge tolerance. Of course, if the driver to which the present invention is applied is not a source driver, the internal implementation of the channel driver unit may be different and the driver may not require a gamma resistor divider. In addition, in the above description, each channel drive unit uses a resistor for electrostatic discharge protection, but those skilled in the art should know that even if only a single channel drive unit uses a resistor for electrostatic discharge protection, Can be implemented. As an example of FIG. 2, if the implementation of components 232-236 is unchanged, and components 238-242 are implemented by wires, such a driver is also within the scope of the present invention. Referring to Fig. 5, for example, if the implementation of elements 232 to 236 is unchanged, and elements 238 to 242 are implemented by wires, such a driver is also within the scope of the present invention. It should be noted that, in the foregoing embodiments, the static electricity protection units 262 268 to 268 are not limited to being implemented by diodes. In fact, these static electricity prevention devices may also be implemented in other manners, for example, The M〇s transistor is implemented as shown in FIG. 6. Fig. 6 is an explanatory view showing an electrostatic protection unit realized by an MOS transistor. Please refer to Figure 6' where 6〇2 and 6〇4 are the power rails, and the power rail 6〇2 is the system voltage rail, and the power rail 604 is the ground voltage line. Marks 606 and 608 are all electrostatic protection 12 1342612 NVT-2007-060 256〇9twf.doc/i single 疋' and 610 is a solder pad. The electrostatic protection unit 6〇6 is realized by a pM〇s transistor, and the electrostatic protection unit 6〇8 is implemented by an nm〇S transistor and the gate of the PMOS transistor is coupled to the power rail 6〇2, The gate of the NM〇s transistor is coupled to the power rail 604, thus presenting two diode-connected MOS transistors for electrostatic discharge protection. In addition, all of the above components implemented by MOS transistors can also be implemented by other forms of transistors. • In summary, the present invention employs a resistor in the driver to protect the electrostatic discharge protection function, and utilizes the resistance and placement of the resistor to make the driver compatible with drive efficiency and electrostatic discharge withstand capability. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. [Simple diagram of the diagram] Figure 1 is a partial circuit diagram of a conventional source driver. 2 is a block diagram of a driver in accordance with an embodiment of the present invention. 3 is a block diagram of a driver in accordance with another embodiment of the present invention. 4 is a block diagram of a driver in accordance with still another embodiment of the present invention. Figure 5 is a block diagram of a driver in accordance with yet another embodiment of the present invention. Fig. 6 is an explanatory view showing an electrostatic protection unit realized by a MOS transistor. [Main component symbol description] 13 1342612 NVT-2007-060 25609twf.doc/n 100 : source driver 102 : dotted line 104 : output switch 106 , 250 : charge sharing switch 108 : resistor - 110 : diode 112 , 114 , 282, 284, 610: pads I 200, 300, 400, 500: drivers 210, 220: channel drive units 212, 222: digital analog converters 214, 224: operational amplifiers 216, 226: switches 232~242: elements 262 ~268, 606, 608: Electrostatic protection unit 272~278, 602, 604: power rail 290: gamma resistor divider # DATA—EVEN, DATA_ODD: digital signal VDD: power supply voltage Vg wide Vgn · gamma voltage VSS : Common potential 14