TWI341862B - - Google Patents

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TWI341862B
TWI341862B TW095149440A TW95149440A TWI341862B TW I341862 B TWI341862 B TW I341862B TW 095149440 A TW095149440 A TW 095149440A TW 95149440 A TW95149440 A TW 95149440A TW I341862 B TWI341862 B TW I341862B
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TW095149440A
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TW200827429A (en
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Naum Soshchin
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

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1341862 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種半導體照明技術 y使固體光源波長改變之螢光粉及其製法 咼的量子輸出7; 20. 85,激發光譜帶擴大 下fe火性向等優點。 【先前技術】1341862 IX. Description of the invention: [Technical field of the invention] The present invention relates to a semiconductor illumination technology y, a fluorescent powder for changing the wavelength of a solid-state light source, and a quantum output 7 of the method for preparing the same; 20. 85, the excitation spectrum band is expanded Fe fire is equal. [Prior Art]

現今由於半導體技術的進步,半導體照明技術得到了 快速的,展。一般含有氮化銦鎵的半導體發光二極體能發 出紐波藍光或紫光。從1965年以來,儘管全世界許多學^ 和工程師都做出了大量的研究,然而這個方面只有日本的 $明家中村修一可以被稱為具有現實意義的奠基人(請參 照 S. Nakamura “The Blue laser diodes”,BerlinNowadays, due to the advancement of semiconductor technology, semiconductor lighting technology has been rapidly developed. Generally, a semiconductor light-emitting diode containing indium gallium nitride can emit neon blue light or violet light. Since 1965, although many studies and engineers all over the world have done a lot of research, this aspect only Japan's $Ming Jia Nakamura Shuichi can be called a realistic founder (please refer to S. Nakamura “The Blue laser diodes”, Berlin

Springer ’ 1997)。 ’ ’Springer' 1997). ’ ’

尤指一種用於 該螢光粉具有 在長時間工作 高效率量子點在“氮化銦鎵”(InGaN)上輕射,可以產 生監光和紫光,同樣在發光二極體也可產生明亮的藍光。 曰本和蘇聯科學家運用牛頓互補色原理,各自獨立地發展 了用於發光二極體的硝酸系螢光粉(請參照A Berg,P Din LED. N-Y Pergamon press, 1975 )及(B. A· A6paM〇B. AeTopcKoe CBH^TejibCTBo CCCP N635813, πρΗορΗτβτ 09. 12.1977)。螢光粉輻射的池位移量為5〇_i5〇nm。帶有 有機薄膜層的發光二極體稱為二元發光組成(二基色)(請 參照 ΗΠ. Coli^hh CBeTOflHo^w η Jia3epu N1,2, 46,2002 ) 〇 1998年此類白光發光二極體獲得了美國專利(1999頒 給S.Shimizu之美國專利US5998925)。這種發光二極體採 用了者名的紀姑石權石(Υ3Α15〇ΐ2)。紀紹石權石榮光粉的顯 著缺點在於---很難控制光譜--餘陣大於120 ns。此外, ^41862 ΐ i業公顿®彻專利壟斷㈣好的讀石螢光於在-破ΙίϊΞί利世^提出的_)紹石權石營光粉^專^ ίϋΐ昭3石,*光粉的成分完全排除了紀 (/月多,、、、2005申峒之[JS 2005/ 093431專利申往安)。 解決類似專利問題,此一做法堪稱範例。 月木 螢光,留石還有一些本質上之缺點- ί =石權石—但餘暉太長。在顺石權“ 極體長_工作時,材料耐質 不尚,誠屬美中不足之處。 阪曰尤口口為 【發明内容】 =解決上述習知技術之缺點,本發明之 匕,可使IU體光源波長改變之螢光粉及其製法,S3 在稀土系石權石的成分中加入一此 發光以 述技術之缺點’本發縣用螢光粉的白In particular, the phosphor powder has a high-efficiency quantum dot that is light-emitting on "InGaN" during long-term operation, and can generate light and violet light, and can also produce bright light in the light-emitting diode. Blu-ray. Sakamoto and Soviet scientists used the Newton complementary color principle to independently develop nitric acid phosphors for light-emitting diodes (see A Berg, P Din LED. NY Pergamon press, 1975) and (B. A· A6paM〇B. AeTopcKoe CBH^TejibCTBo CCCP N635813, πρΗορΗτβτ 09. 12.1977). The cell displacement of the phosphor powder is 5 〇 _i 5 〇 nm. A light-emitting diode with an organic thin film layer is called a binary light-emitting composition (two primary colors) (please refer to ΗΠ. Coli^hh CBeTOflHo^w η Jia3epu N1, 2, 46, 2002) 〇 1998 such white light emitting diode U.S. Patent No. 5,998,925 issued to S. Shimizu, issued to the United States. This kind of light-emitting diode uses the name of Gu Gu Shi Quanshi (Υ3Α15〇ΐ2). A significant disadvantage of Ji Shaoshi Quan Shi Rongguang is that it is difficult to control the spectrum - the residual array is greater than 120 ns. In addition, ^41862 ΐ i industry public ® ® 彻 patent monopoly (four) good reading stone fluorescing in the - Ι Ι ϊΞ ϊΞ 利 提出 提出 提出 绍 绍 绍 权 权 权 权 营 绍 绍 绍 绍 绍 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Completely ruled out the case (JS 2005/ 093431 patent application to the security). Solving similar patent issues, this is an example. Moon wood Fluorescent, stone remains some inherent shortcomings - ί = Shi Quanshi - but the afterglow is too long. In the case of Shun Shiquan, "the body is long and _ work, the material quality is not good, it is a flaw in the beauty. Hansui Yukoukou [invention content] = solve the above-mentioned shortcomings of the prior art, the flaw of the present invention, Fluorescent powder with wavelength change of IU body light source and its preparation method, S3 adds a luminescence to the composition of the rare earth shale stone to describe the shortcomings of the technology.

為達上述之目的,本發明提供一種#H 广1鈽的釔鋁石榴石為基礎,其特= ,、成刀中加入了铽、釓、鏡和镏,且其化學公式為: (Yl-x-y^-p-q GdxTbyYbzLUpCeq)3Al5〇l2 〇 … 改上丄 1之本發明提供一種可使固體光源波長 改,艾之螢光粉之製作方法,其包括 V(N〇3)3.6H2〇 > Gd(N〇3)3.6H2〇 ^ Tb(N〇3)3.6 2〇 YbIn order to achieve the above object, the present invention provides a H-aluminum garnet of #H 广钸1, which is characterized by the addition of yttrium, ytterbium, mirror and yttrium into the knives, and the chemical formula thereof is: (Yl- Xy^-pq GdxTbyYbzLUpCeq)3Al5〇l2 〇... The present invention provides a method for producing a fluorescent powder which can change the wavelength of a solid light source, and includes V(N〇3)3.6H2〇> Gd. (N〇3)3.6H2〇^ Tb(N〇3)3.6 2〇Yb

6Η,〇 ^ Lu(N〇3)3.6H2〇 ^ Ce(N〇3)3.6H2〇 I 1341862 入 ^水⑽),並混合攪拌;將得_職物 =與_1〇3混合;將裝有配料的卿放在 特定氣壓分,及—特定高溫區;在高壓d 1 ’使水溫大於-第-特定溫度Ή;以及以㈣進行適^ :間之篩選’在-第二特定溫度Τ2時對得到的顆粒進行: 【實施方式】6Η,〇^ Lu(N〇3)3.6H2〇^ Ce(N〇3)3.6H2〇I 1341862 into water (10)), and mix and stir; will get _ job = mixed with _1 〇 3; will be loaded The ingredients are placed at a specific pressure point, and - a specific high temperature zone; at a high pressure d 1 ', the water temperature is greater than - the first - specific temperature Ή; and (4) is carried out at the same time: - at a second specific temperature Τ 2 When the obtained particles are carried out: [Embodiment]

首先,本發明之目的在於消除上述摻有鈽的稀土系石 才田石螢光粉的缺陷。為了達到這個目標,本發明之可 ,光源波長改變之營光粉係以摻鈽的石權^為基礎, 在其成分中加入了铽、釓、鐘和镏等元素,其化學公式為: (Y^mGdxTbyYb丄UpCeOsAhO,2,其中該化學指數變動如 下· x-0. 05〜0. 9,y=0. 〇〇1 〜〇. 3,ζ=0· 01〜2,p=〇. 〇卜〇· 2 而q-0. 0001〜0. 2 ’而该摻雜物鈽的最適宜含量,其範圍為: 〇« 〇7$Ce/(Gd+Tb+Yb+Lu) $〇, 20。First, the object of the present invention is to eliminate the defects of the cerium-doped rare earth lanthanite fluorite powder. In order to achieve this goal, the present invention can change the wavelength of the light source to be based on the erbium-doped stone weight, and add elements such as lanthanum, cerium, bell and lanthanum to its composition. The chemical formula is: Y^mGdxTbyYb丄UpCeOsAhO, 2, wherein the chemical index changes as follows: x-0. 05~0. 9, y=0. 〇〇1 〜〇. 3, ζ=0· 01~2, p=〇. 〇卜〇·2 and q-0. 0001~0. 2 ' and the optimum content of the dopant ,, the range is: 〇« 〇7$Ce/(Gd+Tb+Yb+Lu) $〇, 20 .

將三,元素鏡(Yb)、釓(Gd)和錙(Lu)組成一個基 -,代替單一基本元素,例如,釔鋁石榴石中的釔或铽鋁 石榴石中的铽。在基體_再補充加入铽(Tb)和鐘(Yb),這 兩種元素將對起主要輻射作用的鈽離子(Ce+3)產生類似於 增感劑的影響,關於這點後面會講到的。 風/現今簡單說明有關本發明所提出之螢光粉的一些基本 學術構想。在紀鋁石榴石中,圍繞C一離子有配位數 的紀離子’紀離子建立了均勻的靜電場。用Gd+3離子或Tb+3 離f部分取代紀離子只能非本質地改變圍繞Ce+3離子的靜 電場句勻性。在螢光粉晶格成分中加入Lu+3離子,它的 ,子t彳空比相應釔、铽離子半徑小15〜10%,此時電場的平 衡本貝上發生了強烈的變化。於本發明中,加入鑛、铽、 7 1341862 钂等離子後,對於釔鋁石榴石的晶格,它的電子躍遷夂數 減3少從a=l2· 01到u. w埃(幻,接近激化元素μ離子, Lu離^和Yb+3離子本質上增強了晶格内靜電,職結 以Ce離子為基礎的發光顯著提高了。 本發明所發現的這個現象在表丨上已經揭示了, 日y ^發明之螢光粉與標準YAG和TAG材料在光譜中的對 比。透過這些表的比較可以得出結論, L--31000 ^ , 早位’普通TAG螢光粉L=24000單位。 此現象已揭示於表1中,它說明了本發 標;^和TAG材料在光譜中的對比。透以= 結i,本發明之螢光粉的強度為l=3i_單位,著 =24000單位。本發明之螢光粉具有的獨特的二皆= 石權石基體中摻人的Ce+3離子與補充加 Ί 和Lu的濃度比例為:0.09 s Ce /㈣觀u % 由於螢光粉中摻入C#離子濃度較 卢r23: 例如但不限於(U02〜0. _原子“U 是 子的濃度較低,這也是本發明之螢光^叾 ^離 在標準觸口 TAG中,當濃度值士特徵。 面吸收才能實質上有所增加。當:二發 上,此-結果將使勞光粉顏色加深,這日^2:=表面 優短波^光和淺藍光的激發粉之 455〜475而。在YAG:Ce中加入長為《Ο〜470nm或 、卟,伴隨著短波位移,長度 i 為440nm,但激發頻帶寬度並沒有增加,仍 的水準。此外’本發明之螢光粉還有一個 它的激發頻帶的寬度可以增加到。十吊的屬11 這種稀,系;5®石結構㈣絲具有不鱗人所知的 屬性,部能在材料上有所體現,其特徵在於 錄(InGaN)異質結的短 長靶圍疋攸λ-440〜480咖,同時發出長波光皮夺 λ獅〜595mn ’長波位移的最大值同濃度呈么九^ (Gd+Ce) / (Y+Lu+Gd+Tb+Ce) 〇 讓本發明重新闡釋螢光粉所表現的屬性,其中包 ===大位移,;^525 nm。每次補充加入〇. 〇5 IL原^刀率,Ce離子就會向紅光譜區發生7〜8卿的長波位 和。,生類似大的位移的原因可能是螢光粉基體成分中加 入ΐ離子本發日?之螢光粉通常會表現這種屬性。伴隨著 短波光驗發,這㈣光粉的餘暉闕時間會隨著濃度 加而減少。 0.005 $ (Ce+Yb) / (Y+Lu+Gd+Tb+Ce) $〇.丨從 r =120〜60ns。 對^應用於二元發光组成(二基色)發光二極體的營 光粉而吕’餘0軍的馨定尤為重要。餘禪延續時間越短,運 用在發光二極體的激發功率就可以更多地使用在發光二極 體中’吾人用數字來說明這個問題。當T=12〇ns時,發光 二極體光輸出增大6倍,功率增大1G倍^當餘彈減小到 T=60ns時,光輸出增大1〇倍一等於發光二極體電功率增 長額。類似的控制發光二極體輻射功率,對於本發明之提 出的螢光粉的成分的優點,下面會再次說明。 本号X月之螢光粉的所有特性揭示在下面的表1中,並 1341862 螢光粉的齡⑵。化學計細數 U長Λ,(4)的情況。色座標x,y(5) 光粉的發光亮度值餘暉持麟間值。 W 了母種堂 從表1中可以很容易地判斷,每種補 $的元素在本質上影響它的屬性。本以之 ^生不同波長的韓射波。當成分中G(f3離子濃氏^幸ΐϋ515$53:»5ηιη黃綠光譜區域發光。當亂^量增大, m時’光譜位移至Η,590⑽的橙黃區域。 级ί本發明之螢光粉成分中,镏含量的變化改變激發光 ΐ它的至短波區域。在螢光粉成分中铽的含量改 i ϋίί出和相光亮* °鏡離子能產生顯著的影 種料的含量增Α,麵持續關急驟縮短,在 中’這個參數值從τ=跡6Gns發生變化。Third, the elemental mirrors (Yb), yttrium (Gd), and yttrium (Lu) form a base - instead of a single basic element, for example, tantalum in yttrium aluminum garnet or tantalum in yttrium aluminum garnet. In the matrix _ replenishing 铽 (Tb) and bell (Yb), these two elements will have an effect similar to the sensitizer on the cesium ion (Ce+3) which acts as the main radiation, as will be discussed later. of. Wind/Currently, some basic academic ideas regarding the phosphor powder proposed by the present invention are briefly explained. In the aluminum garnet, a uniform electrostatic field is established around the C-ion with a coordination number of the ion. The substitution of the Gd+3 ion or Tb+3 from the f moiety can only non-essentially change the static electric field uniformity around the Ce+3 ion. In the phosphor powder lattice component, Lu+3 ion is added, and its sub-t彳 ratio is 15~10% smaller than the corresponding 钇 and 铽 ionic radii. At this time, the electric field balance has a strong change. In the present invention, after adding the ore, yttrium, 7 1341862 钂 plasma, for the lattice of the yttrium aluminum garnet, its electronic transition enthalpy is reduced by 3 from a=l2·01 to u.w angstrom (magic, close to intensification) The elemental ion, Lu ion and Yb+3 ions essentially enhance the static electricity in the crystal lattice, and the Ce ion-based luminescence is significantly improved. The phenomenon discovered by the present invention has been revealed on the surface, y ^Comparative phosphor powder and standard YAG and TAG materials in the spectrum comparison. Through the comparison of these tables can be concluded, L--31000 ^, early 'normal TAG phosphor powder L = 24000 units. It has been disclosed in Table 1, which illustrates the comparison between the present and the TAG materials in the spectrum. Through the = i, the intensity of the phosphor of the present invention is l = 3i_unit, and = 24000 units. The unique phosphor of the invented phosphor powder = the concentration ratio of the added Ce+3 ion and the supplemental addition of lanthanum and Lu in the stone core matrix: 0.09 s Ce / (4) view u % due to the incorporation of the phosphor powder C# ion concentration is better than lu 23: for example but not limited to (U02~0. _ atom "U is a low concentration of the sub, which is also the fire of the present invention ^叾^ is in the standard contact TAG, when the concentration value is characteristic. The surface absorption can be substantially increased. When: on the second hair, this result will make the color of the light powder deepen, this day ^2:=surface The short-wave and light-blue excitation powders are 455~475. In YAG:Ce, the length is Ο~470nm or 卟, with short-wave displacement, the length i is 440nm, but the excitation bandwidth does not increase. Still the level. In addition, the fluorescent powder of the present invention has a width of its excitation band which can be increased to. The genus of the ten cranes is 11 such a thin, the system; the 5® stone structure (four) has a property that is not well known. The ministry can be embodied in the material, which is characterized by the short-long target coaming λ-440~480 coffee of the (InGaN) heterojunction, and the long-wavelength of the long-wavelength λ lion ~595mn 'long wave displacement The concentration is 九^^(Gd+Ce) / (Y+Lu+Gd+Tb+Ce) 〇 Let the invention reinterpret the properties exhibited by the phosphor, where package ===large displacement, ^525 nm. Adding 次. 〇5 IL original knife rate, Ce ions will occur to the red spectral region 7~8 qing long wave position and., similar to large displacement The reason may be that the phosphor powder is added to the phosphor powder matrix. This type of fluorescent powder usually exhibits this property. With the short-wave photodetection, the (4) afterglow of the powder will decrease with the concentration. 0.005 $ (Ce+Yb) / (Y+Lu+Gd+Tb+Ce) $〇.丨 from r =120~60ns. Apply to ^2 luminescent composition (two primary colors) luminescent diode The sweetness of Lu's Yujun is especially important. The shorter the duration of Yuzen, the more the excitation power used in the light-emitting diode can be used in the light-emitting diodes. 'We use numbers to illustrate this problem. When T=12〇ns, the light output of the light-emitting diode is increased by 6 times, and the power is increased by 1G times. When the residual bomb is reduced to T=60ns, the light output is increased by 1〇 times and equal to the electric power of the LED. The amount of growth. A similar control of the radiant power of the illuminating diode, the advantages of the composition of the luminescent powder proposed by the present invention, will be explained again below. All of the characteristics of this X-ray phosphor are disclosed in Table 1 below, and the age of the 1341862 phosphor (2). The calculus counts the number of U long Λ, (4). Color coordinates x, y (5) The luminous brightness value of the light powder has a residual value. W The mother farm can easily be judged from Table 1, and each of the elements of the $ material affects its properties in essence. This is to use Han wave with different wavelengths. When the composition of G (f3 ion 氏 ^ ΐϋ 515$53:»5 ηηη yellow-green spectral region illuminates. When the amount of turbulence increases, m ' spectral shift to Η, 590 (10) orange yellow area. In the composition, the change of the cerium content changes the short-wavelength region of the excitation pupil. In the phosphor powder composition, the content of strontium is changed to i ϋίί and the phase luminescence * ° Mirror ions can produce significant increase in the content of the shadow material. The continuous closing is shortened rapidly, and the value of this parameter changes from τ = trace 6Gns.

No 影像螢光粉成分⑵ X y z P 1 (Vl x-y-z P-Q, Gdx, Tb>) Yh^ LUp, Ce,V,A|(n 0. 05 0.001 0.000】 ----— 0.01 ------** I sUi2 2 (Vi-,GdxTbyYb,LUcC Cq)3 AL〇i2 0. 1 0.1 0. 001 f —‘ 0. 1 -一〜^__ 3 (Y丨…"Gd'Tb抓Lio: Cq)3 A“〇l2 0.3 0.] 0.001 0. 15 0.005 0.006 0.006 波 長 (nm )⑷ 525 535 560 色座標⑸ 相對 亮度 0.3 0.4 30000 餘 暉 (ns ) ~ Π0 0.3 0.4 0.4 Μ 31500 32200 75 10 1^41862 Π CYr x-y t. p qGdsTbyYbzLupC e〇)3 AI5O12 (YI -χ-y-i-p-qGdxTby YbzLupC 6q)3 ΛΙ5Ο12 (Yl-x y-z D qGdxTbyYbrLUpC e〇)‘i AI5O12 (Vi ^-y z-p-qGd.%TbyYbiLupC &)3 AI5O12 (Yl-.\ y-z-p-qGdxTbyYbzLlipC C<;)3 A 1 ΰ〇12 (Vi X-) i p-fiGdxTbyYbzLui»C eq)3 A lrj〇12 V^AlsOia : CcNo image phosphor composition (2) X yz P 1 (Vl xyz PQ, Gdx, Tb>) Yh^ LUp, Ce, V, A|(n 0. 05 0.001 0.000) ----- 0.01 ----- -** I sUi2 2 (Vi-, GdxTbyYb, LUcC Cq)3 AL〇i2 0. 1 0.1 0. 001 f —' 0. 1 -1~^__ 3 (Y丨..."Gd'Tb grab Lio: Cq)3 A"〇l2 0.3 0.] 0.001 0. 15 0.005 0.006 0.006 Wavelength (nm)(4) 525 535 560 Color coordinates (5) Relative brightness 0.3 0.4 30000 Afterglow (ns) ~ Π0 0.3 0.4 0.4 Μ 31500 32200 75 10 1^ 41862 Π CYr xy t. p qGdsTbyYbzLupC e〇)3 AI5O12 (YI -χ-yip-qGdxTby YbzLupC 6q)3 ΛΙ5Ο12 (Yl-x yz D qGdxTbyYbrLUpC e〇)'i AI5O12 (Vi ^-y zp-qGd.%TbyYbiLupC &)3 AI5O12 (Yl-.\ yzp-qGdxTbyYbzLlipC C<;)3 A 1 ΰ〇12 (Vi X-) i p-fiGdxTbyYbzLui»C eq)3 A lrj〇12 V^AlsOia : Cc

Tb3AhOi2 ; Ce 0.7 0.9 0.2 0.2 0.2 0.2 0.05 0.01 0.05 0-005 0.05 0. 001 0.001 0.001 0.001 0.05 0.001 0.2 0.01 0.05 0.05 0.05 ).006 0.004 0.005 0.02 0.01 0.008 570 590 555 556 557 558 560 549 0.4 9 ——. 0.4 45 〇. 5 0.4 6 ---— 0.4 7 ——. 0.4 2 一〜 0.3 0.4 0.4 0.5 0. 0.! 25^ 0.5 1 0. 0.4 30500 26500 33500 29800 31000 32800 29000 24500 75 72 72 72 74 128 112 座標上ί=2?严變化’同樣在本質上是彩色 „0.4二:=聽。同時’座標 Cd ^ ? M〇〇〇^2000 ^。該螢J=以光色座,巧 卜外,.z 〇, 〇μ〇· 2 ’ Ρ=〇· 〇卜〇. 2 而 cpO. 000卜 〇. 2。 伴$ _ ii明亦揭露—種可使固體光源波長改變之榮 ,71 法。如圖丨所示,本發明可使固體光源波長 1341862 改變之螢光粉之製作方法,其包括下列步驟:先量取 Y(N〇3)r6H2〇、Gd(_3.6H2〇、Tb(N〇3)3.6H2〇、Yb(N〇3)3·Tb3AhOi2; Ce 0.7 0.9 0.2 0.2 0.2 0.2 0.01 0.01 0.05 0-005 0.05 0. 001 0.001 0.001 0.001 0.05 0.001 0.2 0.01 0.05 0.05 0.05 ).006 0.004 0.005 0.02 0.01 0.008 570 590 555 556 557 558 560 549 0.4 9 ——. 0.4 45 〇. 5 0.4 6 ---- 0.4 7 ——. 0.4 2 ~ 0.3 0.4 0.4 0.5 0. 0.! 25^ 0.5 1 0. 0.4 30500 26500 33500 29800 31000 32800 29000 24500 75 72 72 72 74 128 112 coordinates on ί=2? Strict change 'is also in color „0.4二:=听. At the same time' coordinates Cd ^ ? M〇〇〇^2000 ^. The firefly J = in the light color seat, skillful, .z 〇, 〇μ〇· 2 ' Ρ=〇· 〇卜〇. 2 and cpO. 000 〇. 2. With $ _ ii also revealed - a kind of glory that can change the wavelength of solid light source, 71 method. As shown in the figure, the method for fabricating a fluorescent powder having a solid light source wavelength of 1341862 includes the following steps: first measuring Y(N〇3)r6H2〇, Gd(_3.6H2〇, Tb(N〇) 3) 3.6H2〇, Yb(N〇3)3·

6H2〇、Lu(N〇3)r6H2〇 及 Ce(N〇3)r6H2〇 之混合物若干量;(步 驟1) ·’加入濃氨水(),並混合攪拌;(步驟2);將得到 的沉澱物用水洗滌乾淨並與Al(〇H)3混合(步驟3);將裝有 配料的i#網放在南溫爐中並控制在一特定氣壓分率及一特 疋尚概區(步驟4),在南壓銷上加負荷,使水溫大於一第 一特定溫度T1 (步驟5);以及以網篩進行適當時間之篩 選,在一第二特定溫度T2時對得到的顆粒進行乾燥(步驟 於步驟1中,該Y(N〇3)3.6H2〇之量例如但不限於為 0· 693莫耳’ Gd(N〇3)r6H2〇之量例如但不限於為〇 1莫耳, Tb(N〇3V6H2〇之量例如但不限於為〇.丨莫耳,Yb (_3:_ 之量例如但不限於為0.001莫耳,Lu(N〇3)3. 6出〇之量例如 但不限於為0· 1莫耳及Ce(N〇3)r 6出0之量例如但不限於為 0. 006莫耳。a mixture of 6H2〇, Lu(N〇3)r6H2〇 and Ce(N〇3)r6H2〇; (Step 1) • Add concentrated ammonia () and mix and stir; (Step 2); The material is washed with water and mixed with Al (〇H) 3 (step 3); the i# net containing the ingredients is placed in a south temperature furnace and controlled at a specific pressure fraction and a special area (step 4) Loading a load on the south press pin so that the water temperature is greater than a first specific temperature T1 (step 5); and screening at a suitable time with a mesh screen to dry the obtained particles at a second specific temperature T2 ( In the step 1, the amount of Y(N〇3)3.6H2〇 is, for example but not limited to, 0·693 Moer' Gd(N〇3)r6H2〇, for example, but not limited to, 〇1mol, Tb (The amount of N〇3V6H2〇 is, for example but not limited to, 〇.丨莫耳, the amount of Yb (_3:_, for example, but not limited to, 0.001 m, Lu (N〇3) 3.6, such as but not 006摩尔。 An amount of 0. 1 摩尔 and Ce (N 〇 3) r 6 out of 0, for example, but not limited to, 0. 006 Mo.

於步驟2中,該濃氨水之濃度例如但不限於為π%。 於步驟3中,該Al(OH)3之純度例如但不限於為 99· 99%,量例如但不限於為1· 67莫耳。 於步驟4中,該特定氣壓分率例如但不限於為h2.n2= 0. 05:0. 95 ’特定高溫區之溫度例如但不限於為大於 於步驟5中,該特定溫度T1例如但不限於為。 於步驟6中,該網篩例如但不限於為塑膠網^,嗜適 當時間為4小時,該第二特定溫度T2為12〇t。 本發明之螢光粉參數測量在“Sensing”分光光度計 進行並光編制光譜比色鑒定圖(請參照附件―、二及 12 1341862 =射裝置上平行地測錢光粉雕的分散成分圖,對於 =具體成分(丫。.69说。+爪。爲。。丄山.“〇()6)3八15〇12,豆分 散性為: ^/7 di〇=0. 9//m ds〇=4. 2//m d9〇=9. 8//m S=36000 cm2/cm3。 f導體異質結均勻地在全部方向呈2Θ=27Γ弧度發 光。在光技術中通常限制這個過於大 為此要使用各種光學方法,其;包括::。 =0。的球面鏡。同時球面鏡充滿了透光 酸J旨。 巧據本發明,半導體源可以製成了,它由3個 miInGaN異質結組成,異質結包括混聯電路,其T 止、、’:,堅V=7V ’總電流KA。當光源供電時2Θ二3〇、發 增;^_cd ’严通量增大F. im,而光輸出▲ v 在標準白光色度座標上㈣.322 ’ ^〇· 315。颏似的白光光源可以廣泛使用在 作業的礦工和山地礦工,登山運動員以】i 扒t 宗上f述,本發明之可使固體光源波長改變之螢光 以4鈽的釔紹石榴石為基礎,並加入了錢、釓备 =,並射低含量驗料,使其具有高的量子輸出^ 二〇. 85,激發光譜帶擴大,在長時間工作下 〜先通罝為F=360 lm,功率為胙7w等優點, 改善習知_光源之螢絲及其製作方法之缺點。σ 雖然本發明已以較佳實施例揭露如上,然其並非用以 13 1341862 /伙月、’,任何熟習此技藝者,在不脫離本發明之精神 内’當可作少許之更動與麟,因此本發明之保 軏圍‘視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為一示意圖,其繪示根據本發明一較佳實施例之 可使固體光源波長改變之螢光粉之製作方法之流裎示意 圖。 ’以 【主要元件符號說明】 步驟 1 :先量取 Y (腸3)3.瞻、Gd (N〇3)r6H2〇、Tb (N〇3V6H2〇、Yb (N〇3)3.6H2〇、Lu (N03)3.6H20 及 Ce ⑽3)3.6H20 之混合物若干量; 步驟2 :加入濃氨水(NIL·),並混合授拌; 步驟3 ··將得到的沉澱物用水洗滌乾淨並與A1(〇H)3混 合; 步驟4:將裝有配料的坩堝放在高溫爐中並控制在一 特定氣壓分率及一特定高溫區; 步驟5:在尚壓鍋上加負荷,使水溫大於一第一特定 溫度T1 ;以及 步驟6:以網篩進行適當時間之篩選,在一第二特定 溫度T2時對得到的顆粒進行乾燥。 14In step 2, the concentration of the concentrated ammonia water is, for example but not limited to, π%. In step 3, the purity of the Al(OH)3 is, for example but not limited to, 99. 99%, and the amount is, for example but not limited to, 1.67 moles. In step 4, the specific temperature fraction is, for example but not limited to, h2.n2 = 0.05: 0.95. The temperature of the specific high temperature zone is, for example but not limited to, greater than that in step 5, the specific temperature T1 is, for example but not Limited to. In step 6, the mesh screen is, for example but not limited to, a plastic mesh, and the appetite time is 4 hours, and the second specific temperature T2 is 12 〇t. The fluorescent powder parameter measurement of the present invention is carried out in a "Sensing" spectrophotometer to perform a spectral colorimetric identification diagram (please refer to the attachments, 2, and 12 1341862 = the scattered component diagram of the light powder carving in parallel on the shooting device, For = specific ingredients (丫..69 said. + claws. For.. Lushan. "〇()6) 3 八15〇12, bean dispersibility is: ^/7 di〇=0. 9//m ds 〇=4. 2//m d9〇=9. 8//m S=36000 cm2/cm3. The f-conductor heterojunction emits light uniformly in all directions at 2Θ=27Γ radians. In optical technology, this is usually too restrictive. This uses various optical methods, including: a spherical mirror of: =0. The spherical mirror is filled with a light-transmissive acid J. According to the invention, a semiconductor source can be fabricated, which consists of three miInGaN heterojunctions. The heterojunction includes a hybrid circuit, which has a T, , ':, firm V = 7V 'total current KA. When the light source is powered, 2Θ2〇3发, increase; ^_cd 'strict flux increases F. im, and light Output ▲ v on standard white chromaticity coordinates (IV).322 ' ^〇· 315. Similar white light sources can be widely used in miners and mountain miners, mountaineers i 扒t 宗上, the fluorescent light of the present invention which can change the wavelength of the solid light source is based on 4 钇 钇 石榴 garnet, and added money, preparation =, and shot low content, so that High quantum output ^ 二〇. 85, the excitation spectrum band is expanded, under the long-term work ~ first pass is F=360 lm, power is 胙7w, etc., improve the conventional _ light source of the filament and its manufacturing method Disadvantages. σ Although the present invention has been disclosed above in the preferred embodiment, it is not intended to be used in the spirit of the present invention, and may be used as a minor change. Therefore, the present invention is defined by the scope of the patent application. [FIG. 1 is a schematic view showing a solid state according to a preferred embodiment of the present invention. Schematic diagram of the method for manufacturing the phosphor powder with the change of the wavelength of the light source. 'Description of the main component symbols】 Step 1: First measure Y (intestine 3) 3. Prospect, Gd (N〇3) r6H2〇, Tb (N Mixture of 〇3V6H2〇, Yb (N〇3)3.6H2〇, Lu (N03)3.6H20 and Ce (10)3)3.6H20 Drying amount; Step 2: Add concentrated ammonia (NIL·) and mix and mix; Step 3 · Wash the obtained precipitate with water and mix with A1 (〇H) 3; Step 4: Mix the ingredients Placed in a high temperature furnace and controlled at a specific pressure fraction and a specific high temperature zone; Step 5: load the pressure cooker to make the water temperature greater than a first specific temperature T1; and step 6: use a mesh sieve to properly The screening of time, the obtained particles are dried at a second specific temperature T2. 14

Claims (1)

1341862 十、申請專利範圍: 1. 種了使固體光源波長改變之螢光粉之製作方法, 其包括下列步驟: 先量取Υ (Ν〇3)3·6Η2〇、Gd ⑽3)3._、Tb (N〇3>._、 Yb (N〇3)3.6H2〇、Lu (N〇3)3.6H2〇及Ce (_3._之混合物 若千量; 加入濃氨水(NH3),並混合搜掉· 將得到的沉雜用水洗^乾淨並前㈣成合; 將裝有配料的掛網放在高溫爐中並特定氣壓 分率及一特定高溫區; 在高壓銷上加負荷,使水溫大於-第-特定溫度T1 ; 以及 以網篩進行適當時間之篩選, 對得到的驗進行乾S。 弟-特^度h 2. 如申請專利範圍第1項所述之製 直 (船V6M)之量為〇93莫耳,Gd⑽〜^ ^中& H㈣如莫耳則叫·動 水之畔1酬叙製作枝,料該濃氨 4·如申請專利範圍第丨項所述之 八1(0耵3之純度為99.99°/。,量為1.67莫|。乍方法,其中邊 5. 如申請專利範圍第1項所述^ a®^^^H2:N2=0.05:0.95 ^ 14〇〇。〇 荷疋阿溫區之溫度大於 6. 如申請專利範圍第!項所述之製作方法,其中該第一 I 15 134186.2 特定溫度T121HTC。 7.如申請專利範圍第1項所述之製作方法,其中該網 篩可為塑膠網篩,該適當時間為4小時,該第二特定溫度 T2 為 120°C。1341862 X. Patent application scope: 1. A method for preparing a phosphor powder for changing the wavelength of a solid-state light source, comprising the following steps: first measuring Υ(Ν〇3)3·6Η2〇, Gd(10)3)3._, Tb (N〇3>._, Yb (N〇3) 3.6H2〇, Lu (N〇3) 3.6H2〇 and Ce (_3._ mixture if thousands; add concentrated ammonia (NH3), and mix Drop the water to be cleaned and cleaned before (4); place the hanging net containing the ingredients in a high temperature furnace and a specific pressure fraction and a specific high temperature zone; load on the high pressure pin to make the water temperature greater than - the first specific temperature T1; and screening with a mesh screen for an appropriate time, and performing the dry test on the obtained test. 弟-特度度 h 2. As in the patent application scope 1 (straight ship V6M) The amount is 〇93mol, Gd(10)~^^中& H(四), if Moer is called, the shore of the water is 1 reward, the material is concentrated, and the concentrated ammonia 4 is as described in the third paragraph of the patent application scope (1) The purity of 0耵3 is 99.99°/., and the amount is 1.67Mo |. The method of 乍, wherein the side is 5. As described in the first item of the patent scope ^ a®^^^H2:N2=0.05:0.95 ^ 14〇〇 〇荷疋阿温The method of claim 1, wherein the first method of the invention is the method of the first aspect of the invention, wherein the method of claim 1 is The plastic mesh screen has a suitable time of 4 hours and the second specific temperature T2 is 120 °C. 1616
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