TWI339685B - - Google Patents

Info

Publication number
TWI339685B
TWI339685B TW093111259A TW93111259A TWI339685B TW I339685 B TWI339685 B TW I339685B TW 093111259 A TW093111259 A TW 093111259A TW 93111259 A TW93111259 A TW 93111259A TW I339685 B TWI339685 B TW I339685B
Authority
TW
Taiwan
Application number
TW093111259A
Other languages
Chinese (zh)
Other versions
TW200500484A (en
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Publication of TW200500484A publication Critical patent/TW200500484A/en
Application granted granted Critical
Publication of TWI339685B publication Critical patent/TWI339685B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/12—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW093111259A 2003-04-24 2004-04-22 Transparent conductive film and sputtering target TW200500484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003119732 2003-04-24

Publications (2)

Publication Number Publication Date
TW200500484A TW200500484A (en) 2005-01-01
TWI339685B true TWI339685B (en) 2011-04-01

Family

ID=37372869

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111259A TW200500484A (en) 2003-04-24 2004-04-22 Transparent conductive film and sputtering target

Country Status (2)

Country Link
KR (1) KR101010563B1 (en)
TW (1) TW200500484A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4816137B2 (en) * 2006-02-24 2011-11-16 住友金属鉱山株式会社 Transparent conductive film and transparent conductive substrate
CN110797395A (en) * 2019-09-18 2020-02-14 华南理工大学 Doped metal oxide semiconductor, thin film transistor and application
CN116496081B (en) * 2023-04-17 2024-10-15 湘潭大学 Indium tin oxide ternary compound target material and preparation method and application thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10147861A (en) 1996-11-15 1998-06-02 Sumitomo Metal Mining Co Ltd Production of indium oxide-tin oxide sintered body
JPH11302016A (en) 1998-04-21 1999-11-02 Mitsubishi Materials Corp Ito sputtering target suitable for film formation at low temperature, and its production
JP2000233969A (en) 1998-12-08 2000-08-29 Tosoh Corp Production of ito sputtering target and transparent electrically conductive film
JP3531865B2 (en) 2000-07-06 2004-05-31 独立行政法人 科学技術振興機構 Ultra-flat transparent conductive film and manufacturing method thereof

Also Published As

Publication number Publication date
KR20040092445A (en) 2004-11-03
KR101010563B1 (en) 2011-01-24
TW200500484A (en) 2005-01-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees