TWI339685B - - Google Patents
Info
- Publication number
- TWI339685B TWI339685B TW093111259A TW93111259A TWI339685B TW I339685 B TWI339685 B TW I339685B TW 093111259 A TW093111259 A TW 093111259A TW 93111259 A TW93111259 A TW 93111259A TW I339685 B TWI339685 B TW I339685B
- Authority
- TW
- Taiwan
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/12—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003119732 | 2003-04-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200500484A TW200500484A (en) | 2005-01-01 |
| TWI339685B true TWI339685B (en) | 2011-04-01 |
Family
ID=37372869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093111259A TW200500484A (en) | 2003-04-24 | 2004-04-22 | Transparent conductive film and sputtering target |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101010563B1 (en) |
| TW (1) | TW200500484A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4816137B2 (en) * | 2006-02-24 | 2011-11-16 | 住友金属鉱山株式会社 | Transparent conductive film and transparent conductive substrate |
| CN110797395A (en) * | 2019-09-18 | 2020-02-14 | 华南理工大学 | Doped metal oxide semiconductor, thin film transistor and application |
| CN116496081A (en) * | 2023-04-17 | 2023-07-28 | 湘潭大学 | Indium tin oxide ternary compound target material and preparation method and application thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10147861A (en) | 1996-11-15 | 1998-06-02 | Sumitomo Metal Mining Co Ltd | Production of indium oxide-tin oxide sintered body |
| JPH11302016A (en) | 1998-04-21 | 1999-11-02 | Mitsubishi Materials Corp | Ito sputtering target suitable for film formation at low temperature, and its production |
| JP2000233969A (en) | 1998-12-08 | 2000-08-29 | Tosoh Corp | Production of ito sputtering target and transparent electrically conductive film |
| JP3531865B2 (en) | 2000-07-06 | 2004-05-31 | 独立行政法人 科学技術振興機構 | Ultra-flat transparent conductive film and manufacturing method thereof |
-
2004
- 2004-04-21 KR KR1020040027584A patent/KR101010563B1/en active IP Right Grant
- 2004-04-22 TW TW093111259A patent/TW200500484A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040092445A (en) | 2004-11-03 |
| KR101010563B1 (en) | 2011-01-24 |
| TW200500484A (en) | 2005-01-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |