TWI338188B - Photomasks and relevant lithographic method - Google Patents

Description

IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a photomask, and more particularly to a photomask that assists in identifying a pattern. [Prior Art] Lithography is one of the key steps in the fabrication of wafers, which affects the yield of the product. In general, the lithography process consists of eight main steps: vapor phase coating, spin coating, soft baking, alignment and exposure, post-exposure baking, development, hard baking, and post-development inspection. In the alignment and exposure step =, the first A, a photomask and a wafer covering the photoresist are provided, and the photomask needs to be aligned with the proper position of the wafer covering the photoresist. Then, the aligned mask and the dome are exposed to ultraviolet (UV) light, and the ultraviolet light can activate the photosensitive compound in the photoresist, thereby successfully transferring the pattern of the mask to the photoresist-coated crystal. On the circle. The pattern transferred to the wafer can define the size of the component or can be used in subsequent processes such as surname and ion implantation. Fig. 1 is a diagram showing a conventional mask 100. The reticle I includes a substrate. The substrate 101 is typically a glass plate or a quartz plate. The substrate ι〇1 has an effective area area 110 and an electrostatic ring around the effective area area 110, and a mask pattern 103 is formed on the substrate 1〇1 in the effective area area 110. The mask pattern 103 is composed of an opaque chrome film which can be transferred to a wafer by a lithography process to define components or lines on the wafer. In order to correctly match the image projected by each reticle with the pattern on the wafer, an alignment key 105 is further disposed in the effective area 11 ,, and the alignment pattern 1 〇 5 not only assists the reticle pattern 1 〇 3 Accurate transfer to the correct position of the wafer, and the alignment pattern 1〇5 can be supplemented

Cfienfs Docket No.: A2006-045-TW H 's Docket No: 0946-A50990-TWF/Claire/fE<iward/Jul] I 1338188 Order, the operator on the line recognizes the direction of use of the mask 1〇〇. In general, the ^shi^ effect area area 11() is outside the 'mask 1()() has the identification code 107, the member I horse-group can be recognized by the naked eye, and the operator on the production line is covered by the identification code 107. Identify and select the desired mask. However, the degree of similarity between the identification codes of different masks is often large, and the use of the light-shielding mask often occurs on the crystal f production line and must be reworked, thus increasing the production cost. SUMMARY OF THE INVENTION The purpose of the rate is to reduce the frequency of the reticle on the production line. In view of the above, the present invention provides a reticle comprising: a beauty base having an effective area area; a first pattern in the effective area Wherein the first pattern is surrounded by a plurality of scribe lines; and a second pattern is formed on the substrate, wherein the second pattern is enlarged from the first pattern. The present invention further provides a reticle comprising: a substrate having an active surface, a region '帛-pattern, in the effective area region; a second pattern, J on the bottom of the bottom, wherein the second pattern is enlarged from the first pattern; In the effective area region; and a third pattern on which the third pattern is enlarged from the alignment pattern. The invention further provides a method for lithography, comprising: providing a substrate; = providing a photomask between the substrate and the light source, the hood being the reticle; and transferring the pattern of the reticle Onto the substrate. [Embodiment] The following is a detailed description. However, the reticle of the embodiment of the present invention will be

Client's Docket No.: A2006-045-TW Π-s Docket No: 〇946-A50990-TWF/Clairc/Hdward/juln 6 1338188 Scope II I=Example is not the only use of the present invention' This embodiment is only illustrative The specific structure or method of the present invention, which is not intended to limit the present invention and the second and third embodiments of the patent, respectively, illustrate the photomask 2 of the embodiment of the present invention and its application. Referring to Figure 3, the reticle 200 of the embodiment of the present invention can be utilized in a lithography process, e.g., a lithography process that can be used for a light emitting diode (LED). The photomask 200 has a transparent and opaque region; in the process, the wafer 3 is used as a substrate on the transfer mask 2, and the wafer 3 (9) is used to manufacture the light-emitting diode. The substrate is a material such as germanium, gallium phosphide, gallium arsenide or gallium nitride; the surface of the dome 300 is covered with a photoresist layer (not shown). Light 400 from the source, such as ultraviolet (uv) light, can pass through the transparent region of the aligned mask 2 to transfer the pattern 203 on the mask to the wafer 300. In one embodiment, the wafer 3 is a circle of 2 turns, and the mask 200 has a square of 4 inches. In the lithography process, the reticle 200 can contact the surface of the wafer 3: alternatively, the surface of the reticle 2 and the wafer 3 can have a pitch s greater than zero. In other embodiments, there may be a lens between the reticle 200 and the surface of the wafer 300. Referring to Figure 2, the reticle 200 includes a substrate 202, and the substrate 2〇2 may comprise a transparent substrate such as a glass plate or a quartz plate. The substrate 2〇2 has an effective area 210 and an electrostatic ring 22〇 surrounding the effective area 22. The mahjong may be a square wire shape. In the embodiment, the substrate %10 is a shape having a side length L1 of about 4 Å. The effective area 21 〇 can be square or rectangular. In one embodiment, the effective area 2 is a square with a side length L2 of about 3 。. In addition to the effective area area 21, the mask 2 has an identification code 207, which is a set of visually identifiable codes. The operator on the line can identify and select each lithography by the identification code 207.

Client's Docket No.; A2006-045-TW

TTfs Docket No: 0946-A50990-TWF/aaire/ndward/JulU 1338188 The mask to be used. The reticle 200 £ has a pattern 213 and a pattern 215 that are discernible to the naked eye, as will be described in detail below. A first pattern 2〇3 is formed on the substrate 2〇2 in the effective area region 210. The first pattern 203 is a reticle pattern, such as a complete pattern of a single wafer 'which may be surrounded by a plurality of scribe lines 230. A plurality of identical wafer pattern arrays may be spread over the substrate 202, and the wafer pattern disk wafer patterns are separated by a scribe line 23〇. The first pattern 2〇3; ^ (Chr_Um) film is formed. The first pattern 203 can be transferred to the wafer by a lithography process to define components, lines on the wafer, or for subsequent processes such as engraving and ion implantation. The effective area area 2 i 更 has an alignment pattern (_ 聪 t (4) aligning pattern 205 can align the image projected by each ray mask in the semiconductor process with the pattern matching quaternary pattern 205 ′ existing on the wafer The figure not only assists the first figure == to transfer to the correct position of the wafer, and the alignment pattern 2〇5 can assist the operator on the production line to recognize the direction of use of the reticle 200. ^The conventional reticle is different, the reticle is thin A second pattern 213 is added to the substrate, wherein the second figure 荦213 Sun Baiqi has a younger stem-Tongan 9m θ self-division-pattern 203 enlargement. The case 2U can be an enlarged view of the daily pattern, which can be recognized by the naked eye, thereby producing 绫The solid system illusion _3 is not required to be under the microscope, and the layer corresponding to the cover 200 can be quickly viewed. For example, the second pattern 213 is from the first pattern 2 〇, person = No: This is limited to 'as long as the size of the second pattern 213 can be made by the naked eye of the J line, and the effect area is 21〇 and affects the mask of the wafer: the second pattern 2 is located at 3 There is a soil in the area of the application area Q 210, and located in (four)

Client's Docket No.; A2006-045-TW

TTs Docket No: 〇946-A50990-TWF/aaire^dvvard/ju|U 1338188 1 cm X1 male area 210 corner ^ 'The size of the second pattern 213 is about 0 light = 200 1 can be on the base 2〇2 There is a third pattern 215, and the second pattern 215 is enlarged from the self-aligned pattern 2(). The operator of the third pattern 2i5 meat production line does not need to use the microscope to observe the alignment map f 05, but the pattern of the alignment pattern 2〇5 can be directly recognized by the naked eye, and the layer recognition degree of the reticle is removed, and the operator can quickly Identify the direction in which the hood is used. For example, the third pattern 215 is approximately 1 to 100 times the self-aligned pattern 205, but is not limited thereto, as long as the size of the third pattern 215 can be recognized by the online operator and is not occupied by the naked eye. It is preferable that the effective area area 21 of the excess light f 200 affects the patterning of the wafer. In a consistent embodiment, the third pattern 215 is located within the effective area 2] and is located at the corner of the effective area 210, and the second pattern 2 is approximately 1 cm in centimeters. Preferably, the second pattern 213 and the third pattern 215 are located at two corners of the effective area area, respectively. The first pattern 213 and the third pattern 2] 5 may be anywhere on the reticle 2 。. Only the position and size of the second pattern 2 _ 3 and the third pattern 215 'do not allow the second pattern 213 and the third pattern 215 to be transferred to the wafer 3 后续 in the subsequent lithography process. To avoid wasting the available area in the wafer 300. As can be seen from Fig. 3, the photomask 2 is a rectangular shape, and the wafer 300 is approximately a circular shape in the rectangle. Obviously, the pattern change in a portion of the four corners of the mask 200 does not affect the wafer 300, so the corners can be utilized to place the second pattern 213 and the third pattern 215. According to the description of the above embodiment, forming the second pattern 213 and/or the third pattern 215 on the reticle not only reduces the frequency of using the reticle on the production line,

Client's Docket No.; A2006-045-TW

TT's Docket No: 〇946-A5099〇-TWF/Ciairc/Edward/JulM 1338188 and assists the operator on the production line to identify the correct orientation of the reticle. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and the invention may be modified and retouched without departing from the spirit and scope of the invention. The scope is subject to the definition of the scope of the patent application attached.

Client's Docket No.: A2006-045-TW I〇

TFs Docket No: 0946-A50990-TWF/Claire/i:dward/JulI I 1338188 [Simplified Schematic] FIG. 1 is a conventional photomask 100; FIG. 2 is a diagram showing light of an embodiment of the present invention. Cover 200; Figure 3 illustrates the application of the reticle 200 of the embodiment of the present invention. [Main component symbol description] 100, 200~ reticle; 103~ reticle pattern; 107, 207~ identification code; 120, 220~ electrostatic ring; 213~ second pattern; 300~ wafer; 101, 202~ substrate; 105, 205 ~ alignment pattern; 110, 210 ~ effective area area; 203 ~ first pattern; 215 ~ third pattern; 400 ~ light.

Client's Docket No.: A2006-045-TW TTs Docket No: 0946-A50990-TWF/Claire/Edward/Jull 1

Claims (1)

August 11th, 1999, Amendment Replacement Page 10, Patent Application: 1. A photomask comprising: a substrate having an effective area, a first pattern, wherein the first pattern is Surrounding a plurality of scribe lines; and 第二 a second pattern on the substrate, wherein the first pattern is magnified to the naked eye. 2. The reticle as described in claim 1 is placed approximately 1 to 100 times from the first pattern. 3. The reticle-alignment pattern as described in claim 1 is in the effective area. 4. A reticle-third pattern as claimed in claim 3, wherein the reference pattern is enlarged on the substrate. 5. The reticle as described in claim 4 is placed approximately 1 to 100 times from the 5 Hz alignment pattern.乂 6. The reticle case described in item 4 of the patent application is identifiable to the naked eye. 7. The photomask described in claim 4 is located at the corner of the effective area. The reticle of the fourth aspect of the patent application, wherein the first case and the third pattern are located at two corners of the effective area area respectively. The reticle, wherein the first case is located at a corner of the far effective area. The reticle of the first aspect of the patent application scope includes: an identification code on the substrate. Client's Docket No.: A2006-045-TW s Docket No: 〇946-A50990-TWF/aairc/EdWard/Jum pattern from the first of which the second figure further includes: • The pattern is from the The three-pattern is the reticle described in the first aspect of the present invention, wherein the image is in the area of the effective area. outer. Included in the light of the 1 HI patent scope, the substrate includes the glass: the first cover described in the first paragraph of the patent range, wherein the substrate is in accordance with the mask described in the first item, The effective mask includes a reticle as described in claim 1, wherein the substrate package % 'the electrostatic ring surrounds the effective area. _16·- a reticle comprising: a substrate having an effective area; a pattern 'in the effective area>; a pattern enlargement: the naked eye identifying the first pattern from the first, quasi-pattern In the effective area area; and the first pattern 'on the substrate, and the 兮 - 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈 冈Wherein the third one of the second ones of the third ones is as described in claim 16 of the patent application range from about 1 to 1 times the first pattern.光 The reticle pattern as described in claim 16 of the patent application is approximately doubling from the alignment pattern. Η ♦ The reticle pattern as described in claim 16 is located at the corner of the effective area. 20_ The photomask of claim 16, wherein the pattern is located at a corner of the effective area. Clienfs Docket No.; A2006-045-TW TT's Docket No: °9«-A50990-TWF/C(aire/Edvvard/Jum 13 August 1999 Π曰Revised replacement page pattern, please refer to patent scope 16 a mask, wherein the 22nd pattern is respectively located at two corners of the effective area. 1. The mask according to claim 16 of the patent application, further comprising: an identification code on the substrate. Wherein the substrate wherein the substrate is effective, wherein the substrate of the base of the patent application is in the area of the effective area, the mask is as described in claim 16. Transparent substrate. 25' The light as described in claim 16 of the patent application includes glass or quartz. 26. The reticle area of the object of claim 16 is square or rectangular. The reticle of claim 16 , wherein the electrostatic ring surrounds the effective area. 28. A lithography method for manufacturing a light-emitting element, comprising: providing a substrate; providing a light source a photomask between the substrate and the (four), The reticle of the optical military patent target according to item 1; and the riding system exclusively transfers the pattern of the reticle to the substrate. „The method of lithography described in item 28 includes a illuminating two The substrate of the polar body. The soil 30. is a lithography method for manufacturing a light-emitting element, providing a substrate; providing a light source; providing a photomask, the client s Docket No. located at the substrate and the light source : A2006-045-TW ^ 兀> Early 1 Le Tour TT's Docket No: 〇946-A50990-TWF/Claire/Edward/Jull 1 1338188 Aug. 11, 1999 Correction of the light described in item 16 of the page range The method of transferring the reticle to the substrate. The method of lithography according to claim 30, wherein the substrate comprises a substrate of a light emitting diode. Client's Docket No.; A2006-045-TW TT^ Docket No: 〇946-A50990-TWF/Claire/Edward/JuI]] 15