1336487 ^Opifl 爲第9侧肌號中文說明書無劃線修正本 修正晴·"年7月28曰 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種清洗與乾燥晶圓的方法裝置，且 特別是有關於一種清洗與乾燥旋轉中晶圓的方法裝 【先前技術】 、 在生產半導體元件的過程，沈積絕緣與金屬層、_、 包覆光阻層、曝光、並移除光阻(as㈣是f規#_案 的步驟。產生在相職的製程中的外來物f會以俗稱的渴 式清潔製程合使用去離子水（DIW)或化學物質予以= 例如包覆光阻層、曝光並清除製程是以喷射液體化鬼 物質或去離子水（DIW)於晶圓上。傳統的乾燥與^潔^ 置使用晶圓夾頭（ehuek)夾持晶_方法只能處理一個^ 圓。當晶圓被馬達旋轉時，化學物質或去離子水 透過喷嘴從晶圓頂端往下流。因此，以晶圓的旋轉 行這個製程，將使化學物f或去離子水（DIW)浸潤整^ ^單一類型晶圓清洗或乾燥裝置使用去離子水（DIW) 浸潤晶圓，然後使用氮氣乾燥晶圓。 ^而’因為最近的趨勢是在大尺寸晶圓上製作精緻圖 案’導致絲子水（DIW)的清洗製程有 法乾燥的現象發生。 無 【發明内容】 本發明的目的就是在提供一種清洗與乾燥晶圓的裝 1336487 16220pifl 修正日期:99年7月28日 爲第94105196號中文晒書無劃線修正本 晶 置，使用馬拉高尼（Marang〇ni)方式的乾燥方法以加強 圓乾燥的效率。 本發明的再一目的是提供一種清洗與乾燥晶圓的裝 置，以縮短晶圓清洗（浸潤）與乾燥的時間。 為達到上述目的，本發明提出一種晶圓製程裝置。本 裝置包括一旋轉頭、一噴射組件與一移動組件；此旋轉頭 用以維持晶圓之欲處理表面朝上並旋轉此晶圓；該喷射组 Ϊ包含—噴嘴’用以噴射流體至旋轉頭上之晶圓的欲處理 广面’移動組件用以移動噴射組件之喷嘴從晶圓邊緣到中 二罟it第一與第二喷射口，用以噴射不同的流體且被 置在噴嘴的移動方向或鄰近移動方向的直線上。 緣蔣施例所述，喷嘴利用移動組件直線地從晶圓邊 線動線」 第一與第二噴射口被線性安置在喷嘴的直 移動5 if : 3 :述：嘴嘴藉著移動組件旋轉從晶圓中心 動線上。” ° H噴射σ被線性安置在喷嘴的旋轉 以提第本=包::流體供應組件’用 依知、實施例所述，告筮_ 中心時，噴射田弟一與弟二贺射口依序通過晶圓 流二===邊::第-·噴射第- 依照實施例所述，第一體以乾燥晶圓。 弟仙·體可以是去離子水（DIW) 7 1336487 修正日期:99年7月28曰 舄第941〇5196號中文說明書無劃線修正本1336487 ^Opifl is the ninth muscle number Chinese manual without a slash correction. The correction is clear. " July 28 、, invention description: [Technical field of the invention] The present invention relates to a cleaning and drying wafer Method apparatus, and more particularly to a method of cleaning and drying a rotating wafer [Previous Technology], in the process of producing a semiconductor component, depositing an insulating and metal layer, _, cladding a photoresist layer, exposing, and removing The photoresist (as (4) is the step of the f gauge #_ case. The foreign matter f produced in the corresponding process will be treated with deionized water (DIW) or chemical substance in the commonly known thirst cleaning process = for example, coated photoresist The layer, exposure and cleaning process is based on jetting liquidized ghost material or deionized water (DIW) onto the wafer. Conventional drying and cleaning using the wafer chuck (ehuek) to hold the crystal _ method can only process one ^ Circle. When the wafer is rotated by the motor, the chemical or deionized water flows down through the nozzle from the top of the wafer. Therefore, the process of rotating the wafer will infiltrate the chemical f or deionized water (DIW). Whole ^ ^ single type wafer clear The washing or drying device uses deionized water (DIW) to wet the wafer, and then uses nitrogen to dry the wafer. ^ And 'because the recent trend is to make delicate patterns on large-size wafers' leading to the cleaning process of silk water (DIW) The phenomenon of dry drying occurs. None of the contents of the present invention is to provide a cleaning and drying wafer package 1336487 16220pifl Revision date: July 28, 1999 is the 94105196 Chinese sunburn book without a line correction Crystallization, using the Marang〇ni method of drying to enhance the efficiency of round drying. A further object of the present invention is to provide a device for cleaning and drying wafers to shorten wafer cleaning (wetting) and Drying time. To achieve the above object, the present invention provides a wafer processing apparatus. The apparatus includes a rotating head, a jetting assembly and a moving component; the rotating head is used to maintain the wafer facing surface and rotate the same Wafer; the jet group includes a nozzle to eject a fluid to a wafer on the spin head to process a wide-surface moving component for moving the nozzle of the jetting assembly a circular edge to a second and a second injection port for injecting different fluids and being placed in a moving direction of the nozzle or a straight line adjacent to the moving direction. As described in the example, the nozzle linearly uses the moving component Moving from the edge of the wafer" The first and second injection ports are linearly placed in the straight movement of the nozzle. 5 if : 3 : The nozzle is rotated from the center line of the wafer by the moving component." ° H injection σ is linear Placed in the rotation of the nozzle to mention the first = package:: fluid supply assembly 'in accordance with the knowledge, examples, warn _ center, the injection of Tiandi and the second two shots through the wafer flow two = == Edge:: - - Jet - According to an embodiment, the first body is to dry the wafer. Dixian body can be deionized water (DIW) 7 1336487 Revision date: July 28, 1999 舄 No. 941〇5196 Chinese manual without line correction
或包括異㈣(IPA)之去離子水（DIW)混合溶液；第二济 體可以是氮氣或含氮氣之混合氣體。 K =照實施例所述，喷嘴還包括1三喷射口， 卑一噴射口與第二噴射口之間。當笛一 、 口依:通過晶圓中心時，喷射組件移動到晶ς邊:，喷射 圓，==第巧，清洗晶 噴射口贺射弟三流體以第二次乾燥晶圓。 為達到前述特徵，本發明提供洗 法’該方法使用的裝置包含-喷射組件= 口，線性排列在嘴嘴移動方向上 …、有數個補 该方法包括當噴射組件從晶圓中 的體。 轉晶圓以維持晶圓和喷射流體在時，旋 包括：當第-嘴射口從晶圓中心二=喷射的流體 第一流體以清洗晶圓表面；以及#^日^邊=，喷射 口移Γ上嘴射第二流體以乾燥晶圓=。、口隨弟一噴射 二喷射包括:當第三喷射口隨第 燥先前乾燥的晶圓表I。—體當作第二乾燥流體’以乾 易懂為和其他目的、特徵和優點能更明顯 明如下。文特麵佳貫施例，並配合所附圖式，作詳細說 【實施方式】 為讓本發明之上述和其他目的、特徵和優點能更明顯 1336487 修正曰期:99年7月28日 16220pifl , 爲第94105196號中文說明書無劃線修正本 易懂，下文特舉較佳實施例’並配合所附圖式，作詳細説 明如下。本發明當可作些許之更動與潤飾，然其實施例旅 非用以限定本發明。實施例充分且完整揭露本發明，熟習 此技藝者當可依此執行本發明。因此本發明之保護範圍當 視後附之申請專利範圍所界定者為準。全文以相同標號代 表相同元件。 如圖1所示，晶圓清洗與乾燥裝置1〇〇具有一旋轉頭 110,用以支撐晶圓。旋轉軸112連接到旋轉頭11〇之底部 以支持旋轉頭11〇並轉換一旋轉馬力。旋轉馬達114連接 到旋轉軸112以提供旋轉馬力。 、承接杯12〇置入於旋轉頭110周圍。當晶圓”w”進行 清洗與乾燥時，承接杯120預防晶圓”W”被液體喷濺。所 以’外部裳置與鄰近裝置不會被污染。 、 雖然在®巾未標示’但是承接杯12G與_頭ιι〇是 相對建構以便於向上移動及向下移動。晶圓可被放置進入 承接杯12G或將已處理的晶圓推出承接杯⑶之外。 =組件⑽被置入在旋轉頭11〇以喷射清洗(或潤濕） 冷、之乾燥氣體到晶圓表面。當噴射組件13〇的 ％Or a mixed solution of deionized water (DIW) of iso (iv) (IPA); the second colloid may be a mixed gas of nitrogen or nitrogen. K = As described in the embodiment, the nozzle further includes a third injection port between the lower injection port and the second injection port. When flute, mouth: When passing through the center of the wafer, the jetting assembly moves to the edge of the wafer: the jet circle, == dexterity, cleans the crystal jet, and the third fluid is dried for the second time. To achieve the foregoing features, the present invention provides a method of washing. The apparatus used in the method comprises a jetting assembly = port, linearly aligned in the direction of nozzle movement, and a number of complementary methods including the ejection of the component from the wafer. Transferring the wafer to maintain the wafer and ejecting the fluid at the time, the spin includes: when the first nozzle is from the center of the wafer = the first fluid sprayed to clean the surface of the wafer; and #^日^边=, the ejection port Move the upper nozzle to the second fluid to dry the wafer =. The nozzle is sprayed. The second jet includes: when the third jet is dried with the previously dried wafer table I. The body is considered to be the second drying fluid, which is more readily apparent as well as other objects, features and advantages. The above and other objects, features and advantages of the present invention will be more apparent in the light of the embodiments of the present invention. In order to make the above and other objects, features and advantages of the present invention more obvious, the 1936487 revision period: July 28, 1999, 16220pifl For the Chinese manual of No. 94105196, there is no slash correction, and the following is a detailed description of the preferred embodiment hereinafter with reference to the accompanying drawings. While the invention may be modified and modified, the embodiments of the invention are not intended to limit the invention. The present invention is fully and fully disclosed, and the skilled artisan can practice the invention accordingly. Therefore, the scope of the invention is defined by the scope of the appended claims. The same reference numerals are used to refer to the same elements. As shown in Figure 1, the wafer cleaning and drying apparatus 1 has a rotating head 110 for supporting the wafer. The rotary shaft 112 is coupled to the bottom of the rotary head 11 to support the rotary head 11 and convert a rotational horsepower. A rotary motor 114 is coupled to the rotating shaft 112 to provide rotational horsepower. The receiving cup 12 is placed around the rotating head 110. When the wafer "w" is cleaned and dried, the receiving cup 120 prevents the wafer "W" from being splashed by the liquid. Therefore, external skirts and adjacent devices will not be contaminated. Although the ® towel is not labeled 'but the receiving cup 12G and _head ιι are relatively constructed to facilitate upward movement and downward movement. The wafer can be placed into the receiving cup 12G or the processed wafer can be pushed out of the receiving cup (3). = The assembly (10) is placed in the rotating head 11 to spray clean (or wet) the cold, dry gas to the wafer surface. When the ejection assembly 13〇 is %
St心”7_晶圓邊緣時’嘴射清洗(或潤濕)溶液 到晶圓w”之欲處理表面。噴射組件130連接 j移動組件14〇的機械臂142以移動噴射組件13〇。 -機2組件140包括一驅動馬達146，一支標轴144與 馬力，機械撑轴*從驅動馬達146接收旋轉 機械臂M2是裝置在支縣144之上。喷射組件13〇 9 1336487 16220pifl 修正日期:99年7月28曰 爲第94l〇5l%號中文說明書無劃線修正本 配置在機械臂142之末端。驅動馬達146依控制組件18〇 的控制訊號執行作業，以控制晶圓清洗與乾燥的製程。 卜喷射組件130的噴嘴132包括一第一喷射口 134a，_ 第一噴射口 134b，與一第三噴射口 i34c，用以喷射不同的 液體這些喷射口以線性排列在喷射組件130的移動方 向，或在鄰近移動方向的直線上。在實施例中，噴射組件 130在支撐軸144上旋轉地移動。這些喷射口 13如、13扑、 134c線性排列在”a”線之上，且有相同迴旋半徑通過晶 圓中心”c’’。如果噴射組件13〇直線移動而非旋轉移動，則 喷射口會線性排列在線”b，，以通過晶圓中心，如圖3所示。 喷射組件_ 130的直線移動可以有不同的方式。在圖3A到 圖3B繪不係為噴射組件130的直線移動通過移動組件14〇 之機械# 142。在目3C到圖3D I會示係為整個移動組件14〇 依移轉執道148作直線移動。 卜清洗(潤濕）用的去離子水(DIW)供應單元162連接到 第*喷射口 134，且乾燥晶圓用的氮氣提供單元π*連接 到第二噴射口 134b。高溫氮氣提供單元166作為第二次晶 〒乾„連接到第三喷射口 134c。為了在乾燥晶圓 =獲付馬拉高尼（Marang〇ni)效應，包含異丙醇蒸 =的去離子水(DIW)混合賴^聽含異轉(ip a)蒸汽的 氮氣混合氣體依序被第一及第二噴射口噴射。 ^圖8到圖10繪示係為噴射組件130之喷射口的數個 文化形式。在圖8中，所描述的噴射組件n〇a包括一去離 子X(DIW)噴射口及氮氣喷射口。在圖9中，戶斤描述的是 1336487 16220pifl 修正日期:99年7月28曰 爲第94105196號中文說明書無劃線修正本 喷射，、且件13〇b包括-包含異 噴射°及氮氣嘴射口。在心= 醇括—去離子水(DIW)噴射口及包含異丙 圓上3堉曰曰二之&例係以提供異丙醇(ΙΡ Α)蒸汽到整個晶 讓曰曰圓在清洗並乾燥時均處在異丙醇陶蒸汽之 可二嘴射口的數量與供應到喷射口的液體種類 d先並錢晶圓的方法而 間的空間也會不同。 』于贺射口彼此之 步驟圖4到圖7 !會示係為使用噴射組件清洗並乾燥晶圓的 附固旋轉頭⑽上，則是利用真空吸 “、、後再凝轉。喷射組件13〇的第一 = = 移至晶时心。清洗晶圓的去離子二者) 清洗，則|!:-ί343喷射。如果晶圓在第一噴射口⑽被 ，如果第二嘴射口⑽位於晶圓中二= 的氮氣從第二噴射口⑽嗔射出麥ς、餘日曰固用 噴射口 13扣位於曰 、，（見圖5)。如果第三 第三，射σ ^ 中心’二度乾燥晶_的高溫氮氣從 貝射口 134c噴射出去（見圖6)。 中心乾燥裝置100中之喷射組件130從晶圓 得注音^曰時，同時執行清洗與乾燥的動作。值 心、的疋，前組件130的數個噴射口依序排列(依昭製 1336487 16220pifl 修正日期:99年7月28曰 爲第941〇5196號中文說明書無劃線修正本 程先後，比如清洗-一度乾燥·二度乾燥)在通過晶圓中心的 路住上，且當晶圓中心通過時，流體導入到數個噴射口中。 在本發明中，前述晶圓包括光柵(reticle)用的基材，顯 示螢幕基材如液晶顯示面板㈣基材以及魏顯示面板用 的基材，硬碟用的基材，以及如半導體元件之電子裝置 用的晶圓。 综上所述，在本發明中晶圓的清洗與乾燥是同時進 行’所以縮短製程。優點在於錢過程會產生的晶圓缺陷 可以被降低。特職是，整個晶面會乾燥沒有水痕的 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明’任何熟習此技藝者，在不脫離:發明之精神 和範圍内，當可作些狀更動制飾，因此本發明之 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 之側面圖。 之頂面圖。 之噴射組件直線移 圖1繪示為本發明之晶圓製成裝置 圖2繪示為本發明之晶圓製成裝置 圖3A到圖3D繪示係為解釋本發明 動方式。 圖4到® 7 _係為轉本發明之清洗與乾燥的方 圖8到圖1G繪示係為解釋本發明之噴射 )變化形式。 对 圖11繪示係為圖8之狀態，以提供異丙醇(IPA)蒸汽 12 1336487St heart "7_ wafer edge" mouth spray cleans (or wets) the solution to the wafer w" surface to be treated. The jetting assembly 130 is coupled to the robotic arm 142 of the moving assembly 14b to move the jetting assembly 13A. The machine 2 assembly 140 includes a drive motor 146, a target shaft 144 and horsepower, and the mechanical support shaft* receives the rotary robot arm M2 from the drive motor 146 over the branch 144. Injection assembly 13〇 9 1336487 16220pifl Revision date: July 28, 1999. For the 94l〇5l% Chinese manual, there is no scribe correction. The configuration is at the end of the robot arm 142. The drive motor 146 performs operations in accordance with the control signals of the control unit 18A to control the wafer cleaning and drying process. The nozzle 132 of the jetting assembly 130 includes a first ejection opening 134a, a first ejection opening 134b, and a third ejection opening i34c for ejecting different liquids. The ejection openings are linearly arranged in the moving direction of the ejection assembly 130. Or on a straight line adjacent to the direction of movement. In an embodiment, the jetting assembly 130 is rotationally movable on the support shaft 144. These injection ports 13 such as 13 and 134c are linearly arranged above the "a" line, and have the same radius of gyration through the center of the wafer "c". If the injection assembly 13 moves linearly instead of rotating, the injection port will Linearly lined up "b," to pass through the center of the wafer, as shown in Figure 3. The linear movement of the jetting assembly _ 130 can be done in different ways. 3A to 3B, a mechanical #142 that is not linearly moved by the jetting assembly 130 through the moving assembly 14 is depicted. In Fig. 3C to Fig. 3D, it is shown that the entire moving component 14 is moved linearly according to the shifting path 148. A deionized water (DIW) supply unit 162 for cleaning (wetting) is connected to the *ejection port 134, and a nitrogen supply unit π* for drying the wafer is connected to the second ejection port 134b. The high-temperature nitrogen gas supply unit 166 is connected as a second-time crystal „ to the third injection port 134c. In order to dry the wafer = the Marang〇ni effect, the isopropyl alcohol-containing deionized water is included. (DIW) Mixing and listening to a nitrogen-mixed gas containing isoelectric (ip a) steam is sequentially sprayed by the first and second injection ports. ^ Figures 8 to 10 show a plurality of injection ports of the injection assembly 130. Cultural form. In Figure 8, the described injection assembly n〇a includes a deionized X (DIW) injection port and a nitrogen injection port. In Figure 9, the volume description is 1336487 16220pifl. Revision date: July 1999 28曰 is the Chinese manual No. 94105196 without the scribe line correction, and the piece 13〇b includes - contains the different injection ° and the nitrogen nozzle injection. In the heart = alcohol - deionized water (DIW) injection port and contains isopropyl The number of 堉曰曰 上 之 amp 以 以 以 以 以 以 以 以 以 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙The space between the method of supplying the liquid to the ejection port and the method of first filling the wafer will be different. This step of FIG. 4 to FIG. 7! Will be shown as a jet assembly line dried and washed wafer rotary head affixed ⑽, is the use of vacuum suction "turn ,, after coagulation. The first = = of the jetting assembly 13 is moved to the center of the crystal. Cleaning the wafer for both deionization) Cleaning, then |!: -ί343 injection. If the wafer is in the first ejection opening (10), if the second nozzle (10) is located in the wafer, the nitrogen gas from the second injection port (10) is ejected from the second ejection port (10), and the remaining ember injection port 13 is detained in the crucible. (See Figure 5). If the third and third, the high-temperature nitrogen gas of the σ ^ center 'secondary dry crystal _ is ejected from the ejection orifice 134c (see Fig. 6). When the jetting unit 130 in the center drying apparatus 100 receives the sound injection from the wafer, the cleaning and drying operations are simultaneously performed. The value of the heart, the 疋, the number of injection ports of the front component 130 are arranged in order (according to the 1336487 16220pifl correction date: July 28, 1999 is the 941 〇 5196 Chinese manual without scribe line correction process, such as cleaning - Once dry and twice dry) On the path through the center of the wafer, and when the center of the wafer passes, the fluid is introduced into several injection ports. In the present invention, the wafer includes a substrate for a reticle, a substrate for displaying a screen substrate such as a liquid crystal display panel (4), a substrate for a Wei display panel, a substrate for a hard disk, and a semiconductor device such as a semiconductor device. Wafer for electronic devices. As described above, in the present invention, the cleaning and drying of the wafer are simultaneously performed, so that the process is shortened. The advantage is that wafer defects that can be generated by the money process can be reduced. It is a special job that the entire crystal face will be dried without water marks. Although the present invention has been disclosed in the preferred embodiments as above, it is not intended to limit the invention to anyone skilled in the art, without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. [Simplified illustration of the diagram] Side view. Top view. FIG. 1 illustrates a wafer fabrication apparatus of the present invention. FIG. 2 illustrates a wafer fabrication apparatus of the present invention. FIGS. 3A to 3D are diagrams for explaining the present invention. Figures 4 through 7 _ are diagrams for cleaning and drying of the present invention. Figures 8 through 1G illustrate variations of the spray for explaining the present invention. Figure 11 shows the state of Figure 8 to provide isopropanol (IPA) vapor 12 1336487
16220piG 到晶圓上方來清洗並乾燥晶圓。 【主要元件符號說明】 100 :晶圓清洗與乾燥裝置 110:旋轉頭 112 :旋轉轴 114 :旋轉馬達 120 :承接杯 130、130a、130b、130c :喷射組件 132、132a、132b、132c :喷嘴 134a :第一喷射口 134b :第二喷射口 134c :第三喷射口 140 :移動組件 142 :機械臂 144 :支撐軸 146 :驅動馬達 162 :去離子水(DIW)供應單元 164 :氮氣提供單元 166 :高溫氮氣提供單元 168 :異丙醇(IPA)蒸汽供應組件 180 :控制組件 1316220piG is over the wafer to clean and dry the wafer. [Main component symbol description] 100: Wafer cleaning and drying device 110: Rotary head 112: Rotary shaft 114: Rotary motor 120: Receiving cups 130, 130a, 130b, 130c: Injection assemblies 132, 132a, 132b, 132c: Nozzles 134a : first injection port 134b : second injection port 134c : third injection port 140 : moving assembly 142 : mechanical arm 144 : support shaft 146 : drive motor 162 : deionized water (DIW) supply unit 164 : nitrogen supply unit 166 : High-temperature nitrogen supply unit 168: isopropyl alcohol (IPA) steam supply unit 180: control unit 13