TWI335054B - Method for decapsulating package - Google Patents

Description

1335054 UMCD-2006-0200 20994twf.doc/t IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor process, and more particularly to a method of removing a filler, removing a bump, and solving The method of encapsulation. [Prior Art] The 1C package is a program for attaching and attaching each of the 1C crystals in the wafer provided after the processing of the front portion of the material body to the lead frame. Flip Chip InteI>_ect Technology' is mainly a long-body bump on the p-contact of the wafer, which is then flipped over, _ the above-mentioned bump directly with the substrate The technology of connection. This flip-chip bonding technology has the advantages of small area, high number of pins, short leads, low inductance, easy noise, and the like. Therefore, it is very consistent with the current high speed, high efficiency and short requirements of components.

= Error analysis of the packaged product or the heavy product of the packaged product. The product is not covered with a pad and pad. The method of removing the filler and the bump is to grind two = +, The substrate, the filler and the bump are removed from the wafer. However, this is a mortar method that can easily damage the surface of the wafer. This grinding or damage will seriously affect the use of the "block" on the wrong side =. „, using the grinding or grinding process will remove the convex at the same time: two when 'only the filler is part of the need for rework It is very difficult to remove the filler with the grinding 3 but leave a bump on the wafer. The silk __bump, or the crane bump, is not privately filled with the H-direction research and correction square wire. There is no 1335054 UMCD-2006-0200 20994twf.doc/t method that completely removes the filler without leaving a filler residue on the wafer, or can completely remove the filler without damaging the bumps. One method is to remove the bumps without damaging the metal pads on the wafer, or to remove the bumps without spending a large amount of money. SUMMARY OF THE INVENTION It is an object of the present invention to provide for removal from a wafer. The method of filling can completely remove the filler without damaging the bump. It is still another object of the present invention to provide a method for removing bumps from a wafer, which can remove the bumps without causing on the wafer The metal pad is damaged. Another object of the present invention Providing a decapsulation method for decapsulating a packaged product without damaging a wafer packaged therein. The present invention provides a method of removing a filler, comprising: providing a wafer having an active surface, wherein A plurality of bumps are disposed on the active surface of the wafer, and a filler is disposed on the active surface and fills between the bumps. Performing in the - - - - - - - - - - - - - - - - - - - - - - - - - In addition to the remainder of the filler. ^ In accordance with an embodiment of the present invention, the method of removing the filler, the side process is, for example, the reaction of the fresh side. The removal of the filler is described in the example of the gas in the crucible. The method wherein the pure wind body is reduced, for example, to an argon atmosphere. The method of removing the money-filling process according to the embodiment of the present invention, wherein the method is 6-335054 20994 twf.d〇 c/t UMCD-2006-0200 - The method of removing a filler, further comprising the method of removing a bump, comprising: providing and having a main body, wherein a plurality of bumps are disposed on the active surface On. After the hot surface Performing a bump removal process to cause the bumps to be removed by the master of the wafer ==== granules, wherein the bumps are moved back to the method of removing bumps according to embodiments of the present invention, wherein the physics Stripping the above method = = =: suction method 'ultrasonic oscillation method - in accordance with the embodiment of the present invention, the method of removing the bumps, under the air pressure, the process temperature of the hot process is about 100~32 (rc. ', a method of removing a bump according to the present invention, wherein the crucible is performed in a high temperature liquid system. ..., I耘1 removes the bump according to the present invention. The method, the speech system uses a vacuum oil. /, 呵 / 皿 The present invention is further proposed - a method of trans-packaging, comprising: providing a - package, wherein the wafer has - active surface and - back ' and the package is also Heat sink, several bumps, - substrate, - filler and several solder balls. The heat dissipating block is disposed above the back surface of the wafer, and the bump is disposed on one of the first surfaces of the active board to be connected to the wafer by the bump, and the filler is disposed between the slab and the filling block of the board The raccoon thief is placed on the two surfaces of the substrate. After that, remove the 'substrate and solder balls'. Perform the dry side ^UMCD-2006-0200 20994twf.doc/t to remove part of the filler. Wet filling. Performing a thermal process to melt the j^ to remove the remaining portions to separate the bumps from the active surface. The row-bump removal process according to the present invention includes a process The reactive ion engraving process, wherein the dry type is in accordance with the present invention, the de-etching process is performed in a passive gas environment, and the eight intermediate reactive ions are described in accordance with an embodiment of the present invention. The solution process uses a fuming nitric acid. The scoop method 'where the wet etching is performed according to the hair spray method of the present invention is a process temperature of about 6G~ touch. C, Z'/, towel wet money engraving According to this issue _ real _ 敎 = = = =. Before removing the process, perform a clear The method of nitrogen removal is included in the block according to the embodiment of the present invention. The process includes a physical stripping process. 5 method 'where bump removal is performed according to an embodiment of the present invention It is selected from the group called by the combination of the above method and the method of gravity stripping. The solar wave oscillation method and the decompression method according to the invention of the present invention, the process temperature of the hot process is about For decapsulation in a high temperature liquid system according to an embodiment of the present invention, wherein the thermal process is/decapsulated according to an embodiment of the present invention, The system uses a vacuum oil., /, medium rain temperature liquid 1335054 UMCD-2006-0200 20994twf.doc/t In the present invention, the above method of removing the filler and the method of removing the bump are applied to the riding process In the middle, the core completely removes the filler without damage to the bump, and the residual filler remains on the W, and the phase removes the bump without causing damage to the upper metal. Therefore, the process of removing the filler and the bump is not the same as the H-I domain is the cause of the error-process efficiency. And since the bumps are removed by the physical properties of the bumps f, the cost of removing the bumps is also reduced. The above and other objects, features and advantages of the present invention will become more <RTIgt; Shown as a package cross-sectional diagram. Figure 2 is a flow chart showing a method of removing a filler from a wafer according to a preferred example of the present invention. As shown in Figure 1, a package is provided. For example, the package includes a wafer 1 and a substrate 1 and 6. The wafer 100 further includes an active surface 100a and a back surface 1b. The wafer 100 has an active surface. 0a is placed above the substrate 106 relative to the substrate 106. A plurality of bumps 102' are disposed on the active surface 1A of the wafer 1 and the bumps 102 are located between the wafer i〇〇a and the substrate ι6 That is, the substrate 106 is connected to the wafer 1 via the bumps 102. Further, a filler 104 is disposed between the substrate 1〇6 and the wafer 100, and the filler 1〇4 fills the bumps 1〇2. Further, on the back surface 100b of the wafer 100, a heat dissipation block 110 is disposed. A plurality of solder balls 1 〇 8 are disposed on a surface of the substrate 106 that is not connected to the bumps. Referring to FIG. 2, before the method of removing the filler is performed, the scatter 1335054 20994 twf.doc/t UMCD- is removed. 2006-0200 The thermal block 110, the substrate 106 and the solder ball 108 are exposed to expose the back surface 100 of the wafer 100 to the filler 104 and the bump 102 (step S2〇1). Thereafter, as indicated by the solid arrow, in step S202, Performing a dry etching process 2 removes a portion of the filler 1〇4 (FIG. 接着. Next, in step S204, an etch process is performed to remove the remaining portion of the filler 1〇4 to expose the wafer 100. The active surface 1〇〇 &amp; and the bump 1〇2. On the other hand ^ = arrow indicates 'can be performed first' - wet side process after a moment (4) to remove the filler 1G4. After (according to the real or It is indicated by the dashed arrow), in step S2〇6, a clearing is performed. The scale is convex, the convex is completely bare, and (4) the bare I ^ crystal is so _ 贞 可以 can be used in the bare r value Is 'dry silk engraving, for example, is - reactive ion money engraving r such as ί ^, engraving process is for example - blunt In the air environment, the air-side environment is carried out. In addition, the wet side process, for example, nitric acid, is carried out at a temperature of about 60 ···c, for about 3 〜 to 5 minutes, for example, the nozzle is used to spray nitrogen onto the wafer. In the removal process, only the single-wet process is used to remove the process: so the convex == relatively long phase filling is made by the time on the wafer compared with the (four) handle of the rotted solution and the other Conventional removal: Charge: The filling of the block: her skin is damaged. The removal of the filler will make the filler two: UMCD-2〇〇6.02〇〇20994twf d〇c/t affected. Compared with the conventional wire-filling system, in the case of this wealth, the filth of the wire is used to remove the filler, and the _ _ required is shorter, so that the repair of the bulge can be protected. In addition, the filler remaining in the dry etching can be completely removed due to the assistance of the wet process.

When a package error occurs on the wafer, the bump must be removed for inspection. The method is shown as a flow chart for removing the bump from the B-plate according to the preferred embodiment of the present invention. Referring to Figure 3, the wafer 100 having the bumps 102 is provided (step S3〇1). It is worth noting that at this point, the filler 104 may remain on the wafer (10) or be removed from the wafer 100 prior to this. Thereafter, in step S303, a removal process is performed, including a thermal process S303a and a bump removal process S3〇3b to melt the bumps 102' and then remove the melted from the active surface of the wafer 1〇〇. Bump. It is worth noting that the bump removal process S3〇3b includes a physical stripping process. That is, the physical stripping process is selected from the group consisting of a perturbation method, a gravity method, a suction method, a supersonic oscillation method, and a combination of the above methods. Further, when the thermal process S303a is carried out under atmospheric pressure, the temperature of the thermal process is about 100 to 320. (:. 'The hot process S303a is carried out, for example, in a high-temperature liquid system using vacuum oil. That is, 'the surface temperature liquid' during the process of bump removal is, for example, a vacuum oil, which can be used as a heating medium. And the bumps 102 are melted in the high temperature liquid, and then the melted bumps are removed by the physical stripping process described above. After the removal process S303 is performed, the metal germanium on the wafer is exposed. 11 1335054 UMCD-2006 -0200 20994twf.doc/t Taking commercial bump material as an example, Table 1 shows the composition and melting point of three commonly used bump materials. According to the material of the bump, the process temperature of the bump removal process can be changed. Table 1 Material Composition melting point eutectic alloy Sn/Pb = 63/37 183〇C High error amount Sn/Pb = 3/97, 10/90, 310~320〇C 5/95 Error-free Major: Sn-Ag and 221〇C (Sn/Ag) Sn-Ag-Cu 217〇C(Sn/Ag/Cu) In addition, in the conventional solution in which nitric acid is the main component, the solution is removed from the wafer, and the solution is in addition to the etching bump. It will also damage the metal pad on the wafer. Furthermore, it is clear in the experimental data that Removing the lead with a high lead content from the solution of the main component has poor removal efficiency. In contrast, in the method of the present invention, the bump is removed from the wafer according to the physical properties of the bump material, so the wafer is The metal pad is not damaged, and the cost of performing the bump removal process is also low. FIG. 4 illustrates a decapsulation according to a preferred embodiment of the present invention.

12 1335054 UMCD-2006-0200 20994twf.doc/t Flowchart of the method. When it is necessary to perform a reverse process or an error detection on the wafer, the process must be closed. The decapsulation process is a combination of the above removal method and the method of removing the bumps (as shown in FIG. 3A, (in the figure, a package is provided). Please refer to FIG. 4' Removing the heat sink block m and removing the substrate 106 with ==7

Among them -. That is, the process is performed before the wet type === -= is indicated by the dashed arrow, and the wet type is followed by the wet arrow ==_7). After removing the filling of her, the borrowing process is performed on the wafer, and the cleaning process of the bump 102 is performed (S413): Same as above: In step S415, a removal process is performed.

The procedure of the method of removing the bumps from the bumps to remove the bumps, please, remove the bumps on the moving surface, and the method of removing the bumps is as described in the example of the Besch, and therefore is not This is a recap. Ice drowning in the roots of the method of removing the wire and removing the bumps from the block: the St process can't completely remove the filler without causing the bump to be on the wafer, and the bump can be removed. Therefore, the process of removing the filler and the bump is removed. Hey. Work, rework, or error detection process performance

13 1335054 UMCD-2006-0200 20994twf.doc/t Causes. And because the bumps are removed using the physical properties of the bump material, the cost of moving the block is also reduced. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention to those skilled in the art, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the invention is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view of a package.

2 is a flow chart of a method of removing a filler from a in accordance with a preferred embodiment of the present invention. aB Figure 3 depicts a flow chart of a method of removing bumps from 曰 in accordance with a preferred embodiment of the present invention. Figure 4 depicts a flow chart of a method in accordance with a preferred embodiment of the present invention. [Main element symbol description] 1 : package 100 · wafer 100a . active surface 100b : back surface 102 : bump 104 : filler 106 : substrate 108 : solder ball 110 : heat sink block S201 ~ S206 , S301 ~ S303 , S401 - S415: Step flow

Claims (1)

1335054 UMCD-2006-0200 20994twf.doc/t X. Patent Application Range: 1. A method of removing a packaged filler, comprising: providing a package with a wafer having an active surface and a plurality of convexities in the basin a block is disposed on the active surface of the wafer, and a filler is disposed on the active surface and filled between the bumps; an age gas wiper performs a dry side process (10) filler; and performs a wet etching The process is to remove the remaining portion of the fill. The method of removing the filler is as described in the patent application, wherein the dry process includes a reactive ion process. The method for removing a filler according to the above item 1, wherein the pure steroidal environment comprises an argon atmosphere. For the m2 towel, please refer to the method of removing the filler wire as described in item 1. In the i-type process, the wet type _ process xian-frequency is still. U The method for removing the filling wire described in the first item of the wet 5 patent, wherein the minute 1 is 6G~1 according to the temperature of the process, and the time is about 30 seconds~5. The method of removing the object is to remove the 仃--clearing the nitrogen to clear the job; to go to the package 1 - the method of decapsulation, including: Back wins (4) - active surface and - Two heat dissipating blocks are disposed on the back surface of the wafer; a plurality of bumps are disposed on the active surface of the wafer; 15 1335054 UMCD-2006-0200 20994twf.doc/t connection; - a substrate, wherein the substrate is first The surface is disposed between the wafer and the wafer; a filler is disposed between the wafer and the substrate, and a plurality of solder balls filled in the bumps are disposed on a second surface of the substrate; a heat dissipating block; removing the substrate and the solder balls; performing a dry etching process to remove a portion of the filler; performing a wet etching process to remove the remaining portion of the filler; performing a thermal process to melt the And a bump removal process for causing the bumps to be formed by the active surface of the wafer. 8. The dry etching process as described in claim 7 includes - a reactive ion last name The method of engraving process/褒, which makes the reaction ==== method, (4) the method of de-sealing the crucible described in the item, wherein the U· is as described in claim 7 The engraved process is a method of 'into the process temperature, where The clock. b enters for about 30 seconds ~ 5 minutes 12. The process of performing the purge-purge process with nitrogen before the process of claiming the scope of the patent is also included in the method of applying the 翻 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄0200 2〇994twf.doc/t The bump removal process includes a physical stripping process. The method of &lt;the method of wave-shocking and the method of de-encapsulation described in item 7 of the patent range of the 妓u-he-hetery method, the super-sound-big/sicker, the process of the hot process is φ 5 The temperature is about 100~320. . . The method of decapsulation described in Item 7 of the Patent Application No. 7 is carried out in which the cooked mash is carried out in a liquid system. The high lion-like stalks, 17