TWI332738B - Chip protecting system and electronic device and chip protecting method using the same - Google Patents
Chip protecting system and electronic device and chip protecting method using the same Download PDFInfo
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三達編號·· TW3807PA 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種晶月保護系統及應用其之電子 • 裝置與晶片保護方法,且特別是有關於一種用以保護北橋 • 晶片及南橋晶片之至少一者之晶片保護系統及應用其之 電子裝置與晶片保護方法。 φ 【先前技術】 一般而言,電腦主機板上組設有一中央處理器 (Central Processing Unit,CPU)、一北橋晶片(north bridge chip)及一南橋晶片(south bridge chip)。中央處理器利用北 橋晶片及南橋晶片與周邊之元件溝通。因此,北橋晶片及 南橋晶片為申央處理器運作時之重要元件。 目前隨著重載程式之執行及資料處理速度之需求,中 央處理器之負載相對地增加。此外,部分之使用者會利用 φ 超頻或提高北橋晶片及南橋晶片之工作電壓之操作方式 k升中央處理器之工作效率。如此一來,當中央處理器之 負載加重時,北橋晶片及南橋晶片之負載亦對應地增加。 此時,北橋晶片及南橋晶片之溫度會隨著負載增加而 升高。若北橋晶片及南橋晶片之溫度無法適當地降低,則 北橋晶片及南橋晶片可能會因此燒毀,而使得電腦系統無 法繼續正常工作。 6 1332738达达号·· TW3807PA IX. Description of the Invention: [Technical Field] The present invention relates to a crystal moon protection system and an electronic device and a wafer protection method therefor, and in particular to a protection for a North Bridge • A wafer protection system for at least one of a wafer and a south bridge wafer and an electronic device and wafer protection method using the same. φ [Prior Art] Generally, a central processing unit (CPU), a north bridge chip, and a south bridge chip are provided on a computer motherboard. The central processor communicates with the surrounding components using the Northbridge and Southbridge wafers. Therefore, the North Bridge chip and the South Bridge chip are important components for the operation of the Shenyang processor. With the implementation of heavy-duty programs and the speed of data processing, the load on the central processor has increased relatively. In addition, some users will use φ overclocking or improve the operating voltage of the Northbridge and Southbridge wafers. As a result, when the load on the central processing unit is increased, the load on the north bridge chip and the south bridge wafer is correspondingly increased. At this time, the temperature of the north bridge wafer and the south bridge wafer will increase as the load increases. If the temperature of the Northbridge and Southbridge wafers cannot be properly reduced, the Northbridge and Southbridge wafers may burn out, making the computer system unable to continue to operate normally. 6 1332738
三達編號·· TW3807PA 【發明内容】 本發明有關於一種晶片保護系統及應用其之電子裝 置與晶片保護方法,其提供北橋晶片及南橋晶片一保護機 制’以避免北橋晶片及南橋晶片因溫度過高而損毀。如此 一來,即使使用者以超頻之操作方式或以較高工作電壓來 對北橋晶片及南橋晶片進行操作’本發明仍可有效地保護 北橋晶片或南橋晶片 根據本發明之第一方面,提出一種晶片保護系統。晶 片保護系統設置於/電子裝置。電子裝置包括〜電路板、 一北橋晶片及一南橋晶片。電路板具有一上表面及一下表 面。上表面與下表面相對。北橋晶片及南橋晶片均配置於 上表面。晶片保護系統包括一第一溫度感測元件、一判斷 單元及一保護電路。第一溫度感測元件設置於電路板之下 表面,且第一溫度威測元件设置於北橋晶片及南橋晶片之 一者之下方’以感測北橋晶片及南橋晶片之一之溫度。判 斷單元與第一溫度感測元件電性連接。判斷單元用以根據 第一溫度感測元件之狀態產生一溫度值,並與—預定值比 較。當溫度值大於預定值時,判斷單元輪出一致能訊號。 保護電路與判斷單元電性連接。當保護電路接收到致能訊 號時,保護電路使電子裝置關閉。 根據本發明之第二方面,提出一種電子裝置。電子裝 置包括一電路板、一北橋晶片、一南橋晶片及一晶片保護 系統。電路板具有一上表面及一下表面。上表面與下表面 相對。北橋晶片及南橋晶片均設置於電路板之上表面。晶 7 1332738The invention relates to a wafer protection system and an electronic device and a wafer protection method thereof, which provide a protection mechanism for a north bridge wafer and a south bridge wafer to avoid the temperature of the north bridge wafer and the south bridge wafer due to temperature High and damaged. In this way, even if the user operates the north bridge wafer and the south bridge wafer in an overclocked operation mode or at a higher operating voltage, the present invention can effectively protect the north bridge wafer or the south bridge wafer according to the first aspect of the present invention, and propose a Wafer protection system. The wafer protection system is placed in the /electronic device. The electronic device includes a circuit board, a north bridge chip, and a south bridge chip. The board has an upper surface and a lower surface. The upper surface is opposite the lower surface. Both the north bridge wafer and the south bridge wafer are disposed on the upper surface. The wafer protection system includes a first temperature sensing component, a determination unit, and a protection circuit. The first temperature sensing component is disposed on a lower surface of the circuit board, and the first temperature metrology component is disposed under one of the north bridge wafer and the south bridge wafer to sense the temperature of one of the north bridge wafer and the south bridge wafer. The determining unit is electrically connected to the first temperature sensing element. The determining unit is configured to generate a temperature value according to the state of the first temperature sensing element and compare it with a predetermined value. When the temperature value is greater than the predetermined value, the judging unit rotates the coincidence signal. The protection circuit is electrically connected to the determination unit. When the protection circuit receives the enable signal, the protection circuit turns off the electronic device. According to a second aspect of the invention, an electronic device is presented. The electronic device includes a circuit board, a north bridge wafer, a south bridge wafer, and a wafer protection system. The circuit board has an upper surface and a lower surface. The upper surface is opposite to the lower surface. Both the north bridge wafer and the south bridge wafer are disposed on the upper surface of the circuit board. Crystal 7 1332738
三達編號:TW3807PA 片保護系統包括一第一溫度感測元件、一判斷單元及一保 護電路。第一溫度感測元件設置於電路板之下表面,且第 溫度感測元件設置於北橋晶片及南橋晶片之一者之下 方,以感測北橋晶片及南橋晶片之一之溫度。判斷單元與 第一溫度感測7G件電性連接。判斷單元用以根據第一溫度 感測7L件之狀態產生一溫度值,並與一預定值比較。當溫 度值大於預定值時,判斷單元輸出一致能訊號。保護電路 與判斷單元電性連接。當保護電路接收到致能訊號時,保 護電路使電子裝置關閉。 根據本發明之第三方面,提出一種晶片保護方法。晶 片保護方法應用於一電子裝置。電子裝置包括一電路板、 一北橋晶片及一南橋晶片。電路板具有一上表面及一下表 面。上表面與下表面相對。北橋晶片及南橋晶片均配置於 上表面。晶片保護方法包括以下之步驟。首先,利用_第 一溫度感 >則元件感測北橋晶片及南橋晶片之一之溫产。第 一溫度感剩元件設置於電路板之下表面,且第一溫产&贵j 元件设置於北橋晶片及南橋晶片之一者之下方。接著矛】 用一判斷單元以根據第一溫度感測元件之狀態產生—第 一溫度值。然後,利用判斷單元比較第一溫度值是否大於 一預定值。接著,當第一溫度值大於預定值時,判斷單元 輸出一第一致能訊號至一保護電路。然後,當保 ^ 收到第一致能訊號時,關閉電子裝置。 ^ 為讓本發明之上述内容能更明顯易懂,下文 實施例’並配合所附圖式,作詳細說明如下:' +交佳 8 1332738Sanda number: TW3807PA The chip protection system includes a first temperature sensing component, a determining unit and a protection circuit. The first temperature sensing component is disposed on the lower surface of the circuit board, and the temperature sensing component is disposed below one of the north bridge wafer and the south bridge wafer to sense the temperature of one of the north bridge wafer and the south bridge wafer. The judging unit is electrically connected to the first temperature sensing 7G piece. The determining unit is configured to generate a temperature value according to the state of the first temperature sensing 7L piece and compare it with a predetermined value. When the temperature value is greater than the predetermined value, the judging unit outputs a uniform energy signal. The protection circuit is electrically connected to the determination unit. When the protection circuit receives the enable signal, the protection circuit turns off the electronic device. According to a third aspect of the invention, a wafer protection method is presented. The wafer protection method is applied to an electronic device. The electronic device includes a circuit board, a north bridge chip, and a south bridge chip. The board has an upper surface and a lower surface. The upper surface is opposite the lower surface. Both the north bridge wafer and the south bridge wafer are disposed on the upper surface. The wafer protection method includes the following steps. First, the _first temperature sense > component senses the temperature production of one of the North Bridge wafer and the South Bridge wafer. The first temperature sensing component is disposed on the lower surface of the circuit board, and the first temperature & expensive element is disposed below one of the north bridge wafer and the south bridge wafer. Next, the spear is used to generate a first temperature value based on the state of the first temperature sensing element. Then, the judging unit compares whether the first temperature value is greater than a predetermined value. Then, when the first temperature value is greater than the predetermined value, the determining unit outputs a first enable signal to a protection circuit. Then, when the first enable signal is received, the electronic device is turned off. In order to make the above-mentioned contents of the present invention more comprehensible, the following embodiments will be described in detail with reference to the following drawings: ' +交佳 8 1332738
三達編號:TW3807PA 【實施方式】 本發明提出一種晶片保護系統及應用其之電子裝置 與晶片保護方法’其藉由配置於北橋晶片或南橋晶片下方 之一溫度感測元件感測北橋晶片或南橋晶片之溫度,並使 用一判斷單元來根據溫度感測元件之狀態產生一溫度值 並與一預定值比較。當溫度值大於預定值時,則關閉電子 裝置’以避免北橋晶片或南橋晶片因溫度過高而損毁。达达编号号: TW3807PA [Embodiment] The present invention provides a wafer protection system and an electronic device and a wafer protection method therefor, which sense a north bridge wafer or a south bridge by a temperature sensing element disposed under a north bridge wafer or a south bridge wafer. The temperature of the wafer, and a determination unit is used to generate a temperature value based on the state of the temperature sensing element and compare it with a predetermined value. When the temperature value is greater than the predetermined value, the electronic device is turned off to prevent the north bridge wafer or the south bridge wafer from being damaged due to excessive temperature.
第一實施例 請參照第1A圖,其繪示根據本發明一第一實施例之 電子裝置之上視圖。本實施例以電子裝置2〇〇為例說明, 且電子裝置200例如是一電腦主機。電子裝置2〇〇包括一 電路板2W、一北橋晶片220、一南橋晶片23〇及一晶片First Embodiment Referring to Figure 1A, there is shown a top view of an electronic device in accordance with a first embodiment of the present invention. This embodiment is described by taking the electronic device 2 as an example, and the electronic device 200 is, for example, a computer host. The electronic device 2 includes a circuit board 2W, a north bridge wafer 220, a south bridge wafer 23, and a wafer.
保護系統240。g片保護线240包括—第—溫度感測元 件24卜一判斷單元245及一保護電路247。判斷單元 與第一溫度感測元件241及保護電路247電性連接。本實Protection system 240. The g-chip protection line 240 includes a first-temperature sensing element 24, a judging unit 245, and a protection circuit 247. The determining unit is electrically connected to the first temperature sensing element 241 and the protection circuit 247. Real
施例中之圖示省略部分之元件’且以較為誇大之方式繪示 元件,以利清楚顯示本發明之技術特點。 S 上述之電路板21〇、北橋晶片220、南橋晶片23〇及 第一溫度感測元件241之配置方式將進一步參昭第ιβ圖 說明之。第1B圖繪示第1A圖之電子裝置之側視圖。為了 清楚地表示元件間之相對位置’第1B圖僅繪示出部分之 元件。電子裝置200之電路板210具有一上表面211及一 下表面212。電路板210之上表面211與下表面212相對。 9 1332738The components in the embodiments are omitted, and the components are shown in a more exaggerated manner to clearly show the technical features of the present invention. The arrangement of the above-mentioned circuit board 21 〇, north bridge wafer 220, south bridge wafer 23 〇 and first temperature sensing element 241 will be further described in the Fig. FIG. 1B is a side view of the electronic device of FIG. 1A. In order to clearly show the relative positions between the elements, Fig. 1B shows only a part of the elements. The circuit board 210 of the electronic device 200 has an upper surface 211 and a lower surface 212. The upper surface 211 of the circuit board 210 is opposite to the lower surface 212. 9 1332738
三^11號:TW3807PA 北橋晶片220及南橋晶片230均設置於電路板210之上表 面211。第一溫度感測元件241設置於電路板210之下表 面212,且於本實施例中,第一溫度感測元件241設置於 北橋晶片220之下方,以感測北橋晶片220之溫度。 ' 另外’第1A圖之判斷單元245用以根據第一溫度感 測元件241之狀態產生一溫度值,並與一預定值比較。當 溫度值大於預定值時,判斷單元245輸出一致能訊號至保 φ 護電路247。當保護電路247接收到致能訊號時,保護電 路247使電子裝置200關閉,以保護北橋晶片220不因溫 度過高而損毀。 茲將本實施例之晶片保護系統做進一步之說明如 下。請參照第2圖,其繪示第1A圖之電子裝置之電路方 塊圖。第一溫度感測元件241例如是一負溫度係數熱敏電 阻(negative temperature coefficient thermistor),負溫度係 數熱敏電阻之電阻值是隨著溫度上升而下降。本實施例之 φ 晶片保護系統240更包括一電阻R0,電阻R〇與第一溫度 感測元件241串聯。判斷單元245耦接至電阻R0與第一 溫度感測元件241電性連接之一節點P。由於本實施例之 第一溫度感測元件241是用以感測北橋晶片220(如第1A 圖所示)之溫度’因此’當北橋晶片220之溫度升高時,第 一溫度感測元件241(負溫度係數熱敏電阻)之電阻值會下 降。換言之,判斷單元245於節點P處所得到之電壓V0 之分壓會對應地下降’判斷單元245即根據此分壓計算出 溫度值,以與預定值比較°當溫度值大於預定值時,判斷 ⑴2738No. 3: TW3807PA North Bridge Wafer 220 and South Bridge Wafer 230 are disposed on the upper surface 211 of the circuit board 210. The first temperature sensing component 241 is disposed on the lower surface 212 of the circuit board 210. In this embodiment, the first temperature sensing component 241 is disposed under the north bridge wafer 220 to sense the temperature of the north bridge wafer 220. The judgment unit 245 of the 'other' Fig. 1A is for generating a temperature value based on the state of the first temperature sensing element 241 and comparing it with a predetermined value. When the temperature value is greater than the predetermined value, the judging unit 245 outputs the coincidence energy signal to the protection circuit 247. When the protection circuit 247 receives the enable signal, the protection circuit 247 causes the electronic device 200 to be turned off to protect the north bridge wafer 220 from damage due to excessive temperature. The wafer protection system of this embodiment will be further described as follows. Please refer to FIG. 2, which is a circuit block diagram of the electronic device of FIG. 1A. The first temperature sensing element 241 is, for example, a negative temperature coefficient thermistor, and the resistance value of the negative temperature coefficient thermistor decreases as the temperature rises. The φ wafer protection system 240 of the present embodiment further includes a resistor R0 in series with the first temperature sensing element 241. The determining unit 245 is coupled to the node P of the resistor R0 and the first temperature sensing component 241. Since the first temperature sensing element 241 of the present embodiment is for sensing the temperature of the north bridge wafer 220 (as shown in FIG. 1A), the first temperature sensing element 241 is when the temperature of the north bridge wafer 220 is raised. The resistance value of the (negative temperature coefficient thermistor) will decrease. In other words, the partial pressure of the voltage V0 obtained by the judging unit 245 at the node P is correspondingly decreased. The judging unit 245 calculates the temperature value based on the partial pressure to compare with the predetermined value. When the temperature value is greater than the predetermined value, it is judged (1) 2738.
二達編號· TW3807PA 單几245輪出致能訊號Es至保護電路247。致能訊號Es 例如是一低電壓訊號。 如第2圖所示,保護電路247包括一第一電阻R1、 第二電阻R2、一第一電晶體T1及一第二電晶體T2。於Erda number · TW3807PA Single 245 rounds the enable signal Es to the protection circuit 247. The enable signal Es is for example a low voltage signal. As shown in FIG. 2, the protection circuit 247 includes a first resistor R1, a second resistor R2, a first transistor T1, and a second transistor T2. to
本貫施例中’第一電晶體T1及第二電晶體T2例如均為N 金氣半(N-type Metal Oxide Semiconductor,NMOS)電晶 體。第一電晶體T1之閘極透過第一電阻R1接收一第一供In the present embodiment, the first transistor T1 and the second transistor T2 are, for example, N-type Metal Oxide Semiconductor (NMOS). The gate of the first transistor T1 receives a first supply through the first resistor R1
μ電壓VI並電性連接至判斷單元。第一電晶體τ 1之 極接收一第二供應電壓V2,第二供應電壓V2例如是一 接地電壓。 電晶體T2之閘極透過第 M ^不一电按I)文一筮一 ^電壓V3並電性連接至第―電晶體τ 第: 晶體T? + n 〜’久u弟一電 之,原極接收一第四供應電壓V4,第四供庫恭 Γ:二:。地電壓。第二電晶趙Τ2之議4 因此,當保護電路247接收到判斷單元245 # & 能訊號Es時,第一啻日鲈们澈μ贫 5輪出之致 第一電日日體Τ1截止,第二電晶體丁2 四供應電壓V4經由第二電晶體Τ2輸入至南斤^ ’ 230 ’以觸發南橋晶片230控制電子裝置200關閉f曰曰 此外,如第2圖所示,本實施例之南橋晶片23〇且右 一過熱保護接腳231,且電子裝置2〇〇更包括一中央處理 窃250。中央處理器25〇及保護電路247均可電性連接至 南橋晶片230之過熱保護接腳231。換言之,本訾 去柊日Η +夏知例之 兩橋曰曰片230可與電子裝置200之中央處理器25〇可共用 1332738The μ voltage VI is electrically connected to the judging unit. The pole of the first transistor τ 1 receives a second supply voltage V2, which is, for example, a ground voltage. The gate of the transistor T2 is transmitted through the first M ^ ^1 electric voltage I), and the voltage V3 is electrically connected to the first transistor τ: crystal T? + n ~ '久u 弟一电之之,原The pole receives a fourth supply voltage V4, and the fourth library is complimented: two:. Ground voltage. Therefore, when the protection circuit 247 receives the judgment unit 245 # & can signal Es, the first day of the day, we are poor, 5 rounds of the first electric day, the body is 1 The second transistor D4 supply voltage V4 is input to the south through the second transistor Τ2 to trigger the south bridge wafer 230 to control the electronic device 200 to turn off. Further, as shown in FIG. 2, the embodiment The south bridge chip 23 〇 and the right one overheat protection pin 231, and the electronic device 2 further includes a central processing hack 250. The central processing unit 25 and the protection circuit 247 can be electrically connected to the overheat protection pin 231 of the south bridge wafer 230. In other words, the two bridges 230 of the present invention can be shared with the central processing unit 25 of the electronic device 200 1332738
^號:TW3807PA 同一接腳(過熱保護接腳231),而無須另外增加南橋晶片 230之接腳。 再者,本實施例之電子裝置200更包括一基本輸出輸 入系統(Basic Input/Output System,BIOS)260。預定值於 基本輸出輸入系統260中設定。於本實施例中,預定值之 設定例如是由使用者自行設定,以符合使用者之需求。在 保護電路247因為北橋晶片220過熱而使電子裝置2〇〇關 閉之後,當電子裝置200再開機時’基本輸出輸入系統26〇 將會顯示一警告訊息。如此一來,使用者可藉由此警告訊 息了解電子裝置200前次關閉之原因,以適度地調整操作 電子裝置200之方式。例如,使用者可以調降電腦系統的 操作頻率,或是調降北橋晶片的工作電壓,以降低北橋晶 片再次過熱之機率。 以下利用上述所提及之晶片保護系統240及應用其 之電子裝置2 0 0說明根據本發明之第一實施例之晶片保護 方法。請同時參照第2圖及第3圖,第3圖繪示根據本發 明一第一實施例之晶片保護方法之流程圖。本實施例之晶 片保護方法包括以下之步驟。首先,由於本實施例之第一 溫度感測元件241設置於北橋晶片220(如第1B圖所示) 之下方,因此於步驟701中是利用第一溫度感測元件241 感測北橋晶片220之溫度。 接著,於步驟703中,利用判斷單元245以根據第一 溫度感測元件241之狀態產生一溫度值。由於本實施例之 第一溫度感測元件241為一負溫度係數熱敏電阻,因此判 12 1332738^ No.: TW3807PA The same pin (overheat protection pin 231), without the need to additionally add the pin of the south bridge wafer 230. Furthermore, the electronic device 200 of the embodiment further includes a Basic Input/Output System (BIOS) 260. The predetermined value is set in the basic output input system 260. In this embodiment, the setting of the predetermined value is, for example, set by the user to meet the needs of the user. After the protection circuit 247 turns off the electronic device 2 because the north bridge wafer 220 is overheated, the basic output input system 26A will display a warning message when the electronic device 200 is turned back on. In this way, the user can use the warning message to understand the reason for the previous shutdown of the electronic device 200 to moderately adjust the manner in which the electronic device 200 is operated. For example, the user can reduce the operating frequency of the computer system or reduce the operating voltage of the north bridge chip to reduce the probability of overheating of the north bridge wafer. The wafer protection method according to the first embodiment of the present invention will be described below using the wafer protection system 240 mentioned above and the electronic device 200 using the same. Please refer to FIG. 2 and FIG. 3 simultaneously. FIG. 3 is a flow chart showing a wafer protection method according to a first embodiment of the present invention. The wafer protection method of this embodiment includes the following steps. First, since the first temperature sensing element 241 of the present embodiment is disposed under the north bridge wafer 220 (as shown in FIG. 1B), in step 701, the north bridge wafer 220 is sensed by the first temperature sensing element 241. temperature. Next, in step 703, the determining unit 245 is utilized to generate a temperature value according to the state of the first temperature sensing element 241. Since the first temperature sensing element 241 of the embodiment is a negative temperature coefficient thermistor, it is judged 12 1332738
三達編號:TW3807PA 斷單元245是利用由P點處所得之分壓計算出對應之溫度 值。 然後,於步驟705中,利用判斷單元245比較溫度值 是否大於預定值。於本實施例中,預定值可由使用者自行 於基本輸出輸入系統260中訂定,以符合使用者之需求。 接著,於步驟707中,當溫度值大於預定值時,判斷 單元245輸出致能訊號Es至保護電路247。 然後,於步驟709中,當保護電路247接收到致能訊 號Es時,南橋晶片230關閉電子裝置200。致能訊號Es 截止第一電晶體T1後,第二電晶體T2將被導通,使得第 二電晶體T2輸入第四供應電壓V4至南橋晶片230,以觸 發南橋晶片230控制電子裝置200關閉。 接著,於步驟711中,當電子裝置200再開機時,由 基本輸出輸入系統260顯示一警告訊息。此外,於本實施 例中,晶片保護方法可選擇性地於步驟701之前更包括於 基本輸出輸入系統260中設定預定值之步驟,以符合使用 者之需求。 上述即為根據本發明之第一實施例之晶片保護系統 及應用其之電子裝置與晶片保護方法,其提供保護北橋晶 片之機制,以避免北橋晶片因溫度過高而燒毁。此外,於 本實施例中,保護電路因為北橋晶片過熱而使電子裝置關 閉之後,當電子裝置再開機時,基本輸出輸入系統將會顯 示警告訊息,以讓使用者瞭解電子裝置前次關機之原因。 如此一來,即使使用者以超頻之操作方式或以較高之工作 13 1332738Sanda number: TW3807PA The breaking unit 245 calculates the corresponding temperature value by using the partial pressure obtained from the point P. Then, in step 705, the determination unit 245 compares whether the temperature value is greater than a predetermined value. In this embodiment, the predetermined value can be set by the user in the basic output input system 260 to meet the needs of the user. Next, in step 707, when the temperature value is greater than the predetermined value, the determining unit 245 outputs the enable signal Es to the protection circuit 247. Then, in step 709, when the protection circuit 247 receives the enable signal Es, the south bridge wafer 230 turns off the electronic device 200. After the enable signal Es is turned off the first transistor T1, the second transistor T2 will be turned on, so that the second transistor T2 is input to the fourth supply voltage V4 to the south bridge wafer 230 to trigger the south bridge wafer 230 to control the electronic device 200 to be turned off. Next, in step 711, when the electronic device 200 is turned back on, a warning message is displayed by the basic output input system 260. Moreover, in the present embodiment, the wafer protection method may optionally include the step of setting a predetermined value in the basic output input system 260 prior to step 701 to meet the needs of the user. The above is the wafer protection system according to the first embodiment of the present invention and the electronic device and wafer protection method therefor, which provide a mechanism for protecting the north bridge wafer to prevent the north bridge wafer from being burnt due to excessive temperature. In addition, in this embodiment, after the protection circuit is turned off due to overheating of the north bridge chip, when the electronic device is turned on, the basic output input system will display a warning message to let the user know the reason for the previous shutdown of the electronic device. . In this way, even if the user operates in an overclocked manner or works at a higher level 13 1332738
三達編號:TW3807PA 電壓來對北橋晶片及南橋晶片進行操作,本實施例之晶片 保護系統及應用其之電子裝置與晶片保護方法仍提供了 保護北橋晶片之機制。 雖然本實施例之第一溫度感測元件配置於北橋晶片 • 之下方,然而,熟知此技藝者應可明瞭第一溫度感測元件 亦可設置於南橋晶片之下方,以提供保護南橋晶片之機 制。 第二實施例 本實施例與第一實施例之差異在於第一實施例僅利 用第一溫度感測元件感測北橋晶片之溫度,而本實施例則 利用第一溫度感測元件及一第二溫度感測元件分別感測 北橋晶片及南橋晶月之溫度,以避免北橋晶片及南橋晶片 因溫度過向而燒毀。 請參照第4圖,其繪示根據本發明一第二實施例之電 子裝置之上視圖。電子裝置300之晶片保護系統340包括 第一溫度感測元件341、第二溫度感測元件342、一判斷 單元345及一保護電路347。第一溫度感測元件341及第 二溫度感測元件342皆設置於電路板310之下表面,且第 一溫度感測元件341及第二溫度感測元件342分別設置於 北橋晶片320及南橋晶片330之下方,以感測北橋晶片320 及南橋晶片330之溫度。 於本實施例中,判斷單元345與第一溫度感測元件 341、第二溫度感測元件342及保護電路347電性連接。 14 1332738The three-numbered TW3807PA voltage is used to operate the north bridge wafer and the south bridge wafer. The wafer protection system of the present embodiment and the electronic device and wafer protection method using the same still provide a mechanism for protecting the north bridge wafer. Although the first temperature sensing element of the present embodiment is disposed under the north bridge wafer, it is well known to those skilled in the art that the first temperature sensing element can also be disposed under the south bridge wafer to provide a mechanism for protecting the south bridge wafer. . The second embodiment differs from the first embodiment in that the first embodiment senses the temperature of the north bridge wafer only by using the first temperature sensing element, and the first embodiment uses the first temperature sensing element and a second The temperature sensing components respectively sense the temperature of the north bridge wafer and the south bridge crystal moon to prevent the north bridge wafer and the south bridge wafer from being burnt due to temperature overshoot. Referring to Figure 4, there is shown a top view of an electronic device in accordance with a second embodiment of the present invention. The wafer protection system 340 of the electronic device 300 includes a first temperature sensing component 341, a second temperature sensing component 342, a determining unit 345, and a protection circuit 347. The first temperature sensing component 341 and the second temperature sensing component 342 are disposed on the lower surface of the circuit board 310, and the first temperature sensing component 341 and the second temperature sensing component 342 are respectively disposed on the north bridge chip 320 and the south bridge chip. Below 330, the temperature of the north bridge wafer 320 and the south bridge wafer 330 is sensed. In the embodiment, the determining unit 345 is electrically connected to the first temperature sensing element 341, the second temperature sensing element 342, and the protection circuit 347. 14 1332738
三達編號:TW3807PA 判斷單元345根據第一溫度感測元件341及第二溫度感測 元件342之狀態以分別產生一第一溫度值及一第二溫度 值。當第一溫度值大於一預定值時,判斷單元345則輸出 一第一致能訊號至保護電路347,且當第二溫度值大於預 定值時,判斷單元345則輸出一第二致能訊號至保護電路 347。當保護電路347接收到第一致能訊號或第二致能訊 號時,保護電路347使電子裝置300關閉,以保護北橋晶 片320及南橋晶片330不因溫度過高而損毀。 至於本實施例之晶片保護方法則請同時參照第5 圖,第5圖繪示根據本發明一第二實施例之晶片保護方法 之流程圖。第5圖之步驟801a至步驟809a為利用第一溫 度感測元件341、判斷單元345及保護電路347保護北橋 晶片320之流程,步驟801b至步驟809b則為利用第二溫 度感測元件342、判斷單元345及保護電路347保護南橋 晶片3 3 0之流程。 當電子裝置300因北橋晶片320或南橋晶片330過熱 關機之後再開機時,基本輸出輸入系統(未繪示)將會顯示 一警告訊息,以提醒使用者電子裝置300前次關機之原 因。如此一來,當北橋晶片320或南橋晶片330之溫度過 高時,即可藉由本實施例之晶片保護系統340之保護機制 關閉電子裝置300,以避免北橋晶片320及南橋晶片330 燒毁。 本發明上述實施例所揭露之晶片保護系統及應用其 之電子裝置與晶片保護方法,其藉由北橋晶片或南橋晶片 15 1332738The third level number: TW3807PA determining unit 345 generates a first temperature value and a second temperature value according to the states of the first temperature sensing element 341 and the second temperature sensing element 342, respectively. When the first temperature value is greater than a predetermined value, the determining unit 345 outputs a first enable signal to the protection circuit 347, and when the second temperature value is greater than the predetermined value, the determining unit 345 outputs a second enable signal to Protection circuit 347. When the protection circuit 347 receives the first enable signal or the second enable signal, the protection circuit 347 turns off the electronic device 300 to protect the north bridge wafer 320 and the south bridge wafer 330 from being damaged due to excessive temperature. For the wafer protection method of the present embodiment, please refer to FIG. 5 at the same time. FIG. 5 is a flow chart showing a wafer protection method according to a second embodiment of the present invention. Steps 801a to 809a of FIG. 5 are processes for protecting the north bridge wafer 320 by using the first temperature sensing element 341, the determining unit 345, and the protection circuit 347, and the steps 801b to 809b are performed by using the second temperature sensing element 342. The unit 345 and the protection circuit 347 protect the flow of the south bridge wafer 330. When the electronic device 300 is turned on after the north bridge chip 320 or the south bridge chip 330 is turned off, the basic output input system (not shown) will display a warning message to remind the user of the reason for the previous shutdown of the electronic device 300. As a result, when the temperature of the north bridge chip 320 or the south bridge chip 330 is too high, the electronic device 300 can be turned off by the protection mechanism of the wafer protection system 340 of the embodiment to prevent the north bridge chip 320 and the south bridge wafer 330 from being burned. The wafer protection system and the electronic device and wafer protection method thereof disclosed in the above embodiments of the present invention are provided by a north bridge wafer or a south bridge wafer 15 1332738
三達編號:TW3807PA ' 之溫度作為是否關閉電子裝置之依據,以保護北橋晶片及 南橋晶片。如此一來,即使使用者以超頻之操作方式或以 較高之工作電壓操作北橋晶片及南橋晶片,上述實施例所 ' 揭露之晶片保護系統及應用其之電子裝置與晶片保護方 法仍可有效地保護北橋晶片或南橋晶片,以避免北橋晶片 及南橋晶片因溫度過高而燒毁。 綜上所述,雖然本發明已以較佳實施例揭露如上,然 $ 其並非用以限定本發明。本發明所屬技術領域中具有通常 知識者,在不脫離本發明之精神和範圍内,當可作各種之 更動與潤飾。因此,本發明之保護範圍當視後附之申請專 利範圍所界定者為準。The temperature of the Sanda number: TW3807PA' is used as the basis for shutting down the electronic device to protect the North Bridge chip and the South Bridge chip. In this way, even if the user operates the north bridge wafer and the south bridge wafer in an overclocked operation mode or at a higher operating voltage, the wafer protection system disclosed in the above embodiments and the electronic device and the wafer protection method using the same can be effectively Protect the North Bridge or South Bridge wafers to prevent the North Bridge and South Bridge wafers from burning due to excessive temperatures. In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
16 133273816 1332738
三達編號:TW3807PA 【圖式簡單說明】 第1A圖繪示根據本發明一第一實施例之電子裝置之 上視圖; 第1B圖繪示第1A圖之電子裝置之側視圖; 第2圖繪示第1A圖之電子裝置之電路方塊圖; 第3圖繪示根據本發明一第一實施例之晶片保護方 法之流程圖; 第4圖繪示根據本發明一第二實施例之電子裝置之 上視圖;以及 第5圖繪示根據本發明一第二實施例之晶片保護方 法之流程圖。3D TW3807PA [Simple Description of the Drawings] FIG. 1A is a top view of an electronic device according to a first embodiment of the present invention; FIG. 1B is a side view of the electronic device of FIG. 1A; 1 is a circuit block diagram of an electronic device; FIG. 3 is a flow chart of a wafer protection method according to a first embodiment of the present invention; and FIG. 4 is a diagram showing an electronic device according to a second embodiment of the present invention. FIG. 5 is a flow chart showing a wafer protection method according to a second embodiment of the present invention.
17 133273817 1332738
三達編號:TW3807PA 【主要元件符號說明】 200、300 :電子裝置 210、310 :電路板 211 :上表面 212 :下表面 220、320 :北橋晶片 230、330 :南橋晶片 240、 340 :晶片保護系統 R0 :電阻 241、 341 :第一溫度感測元件 245、345 :判斷單元 247、347 :保護電路 T1 第一電晶體 T2 第二電晶體 R1 第一電阻 R2 第二電阻 250 :中央處理器 260 :基本輸出輸入糸統 342 :第二溫度感測元件 Es · 致能訊號 V0 電壓 VI 第一供應電壓 V2 第二供應電壓 V3 第三供應電壓 V4 :第四供應電壓Sanda number: TW3807PA [Description of main component symbols] 200, 300: electronic device 210, 310: circuit board 211: upper surface 212: lower surface 220, 320: north bridge wafer 230, 330: south bridge wafer 240, 340: wafer protection system R0: resistors 241, 341: first temperature sensing elements 245, 345: determining units 247, 347: protection circuit T1 first transistor T2 second transistor R1 first resistor R2 second resistor 250: central processor 260: Basic output input system 342: second temperature sensing element Es · enable signal V0 voltage VI first supply voltage V2 second supply voltage V3 third supply voltage V4: fourth supply voltage
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