1331081 九、發明說明： 【發明所屬之技術領域】 本發明涉及-麵具馳光I置，尤赫及—觀具_子束抛光裝 置。 【先前技術】 用模具進行大規模生產具有成本低，加工精度高等優點，因此模具於 產業上應用廣泛。為獲得表面平滑、尺寸精度高之工件，要求模具具有光 滑之表面，因此模具製造出一定形狀後需進行拋光。 由於具體的產品或部件具有各種複雜形狀或微結構，相應之模具表面 亦具對應之形狀及微結構’對於這些複剌彡狀或微結構，無法進行機械抛 光’可替代之抛光方法包括放電加工(Electrical Discharge Maehining， EDM EDM法抛光具有較高之加工靈活度，可對複雜結構進行拋光。 然而利用EDM法進行拋光所獲得之表面粗链度仍然較高，其中心線平 均表面粗糙度(Ra)大於1微米(μπι)。 【發明内容】 有蓉於此，有必要提供-種離子源；及—種__子源，可獲得更 平滑之表面之模具拋光裝置。 -獅子源，其包括-腔體及設置於趣财之—陰極麟、一陰極、 -屏極、-加速極及-可調屏極，該陰極靠近該陰極燈絲設置，該屏極、 加速極及可稱極依次雜該陰㈣置，且其上之電健次降低，該可調 屏極包括-通孔，該通孔大小及形狀可調，從而可利用魏孔調節射出之 離子束截面大小及形狀。 種模具拋絲置，其包括—離子源，雜子賴於發射進行抛光之 離子束，雜子源包括-腔體及設置於該腔體中之—陰極燈絲、一陰極、 =極、—加速極及—可調屏極’該陰極靠近該陰極燈毅置該屏極、 力口速極及可稱減次_雜極設置，財調屏純括—軌，該通孔 大小及形射調，辦剌職佩糾鱗子絲面大小及形狀。 所述離子源㈣賴通孔可調節絲子源糾之離子城面形狀及大 ⑧ 1331081 小。所述之拋献置·_子源發射出之離子束精拋光，可根據 觀變鮮滅面雜及大小，可魏更加精細之拋 先，最終可獲仔中心線平均表面粗链度處於0.W奈米之平滑表面。 【實施方式】 以下結合附圖及實施例進行詳細說明。 參閱第-圖，本實施例之模具拋光裝置包括_離子源i，離子源丨包括 -腔體1G及設置於腔體1G中之陰極燈絲u、電磁 遮蔽14、屏極15、加速極16、可調屏極17及_和器i8。陰極 入口 ： 氣體入口101，腔體10外殼之材質可為石英。氣體 US 氣體’放電氣體可為惰性氣體，如氦氣、氖氣、氬 陰設置於該電磁線關環种心，其可為鎢 盆 二通^流時可發射出電子ηι，電子⑴於電磁線圈12產生之刚乍 與腔㈣内之氣體分子112碰撞後使氣體分子ιΐ2游離，產乍 ί 子113亦會碰撞氣體分子112使其游離。陰極13為錐 =’，、包括-陰極通孔131，陰極13可靠近陰極燈絲12設置，本實施例中 =13錐形底端扣於該電磁線圈12上，其上施加有較陰極燈絲u上低之 極二13=磁線圈12 _出之正離子113及部分電子111均經過陰 極受分子⑴，為防止陰 質可為氧她、氧化鎂或:_。+陰極料14，_蔽14之材 =極=上施加有比陰極13上更低之電壓，因此正離子ιΐ3均被屏極 a吸引，备正離子113運動至屏極15處時，一部分碰撞到屏極15上一 設於屏極15上之屏極通孔151之正離子向加速極16 運動。加速極16之電位較屏極15進一步降低，正離子ιΐ3 _U61 ’ 且161 與雜舰 151 相 ’若正離子113動能不足，即使通過屏極15， ’Ή、' 1 16吸引’因此加速極16亦起到篩選作用使發射出之離子 ⑧ B31081 束具有車父向之速度’因此具有較強之抱光能力。 通過加速極16後，正離子113即向可調屏極π運動，可調屏極17上 可施加較加速極16更低之電壓，以進一步加速正離子113。可調屏極17上 包括一通孔171。本實施例中採用兩活動擋板172調節通孔171之大小。還 可更換具有不同大小或形狀通孔171之可調屏極17。 通孔171之大小及形狀可調，從而可以利用通孔171調節最络射出之 離子束域面形狀及大小，可實現更加精確之拋光。#表題驗小區域 需進行進-倾光，可調轉子束使賊賴小，猶止離子束對除該較 小區域外部分待拋光基底之損傷。當需要進行精細拋光時，可離 射出面積’使離子束更分散，拋光更均勻。 中和器18麟巾和料紐㈣之正離子束。_正軒束進行抛光 時’正離子束轟擊待拋光基底表面，基底表面原子被轟擊㈣，正離子束 中之正電荷轉移到基絲面，其可形成—電場，阻礙後續拋权順利進行， 採用中和器18中和離子源丨發射出之正離子束，可改善正離子束之拋光性 能。中和H 18可為熱絲式’熱絲式巾和器可採闕絲或组絲發射電子以中 和自通孔171發射出之正離子束。 參閱第二圖’此處中和器18還可用電衆橋式中和器(ρι_阶咖 NeUtralizei•，⑽代替。電襞橋式中和器包括銅圈⑻、兗杯i82、離子 收集杯183、電子引出電極184及阻隔器185。銅圈181中施加13 %百萬 射頻電源，將電磁波輕合導入究杯182中以產生賴；離子收集杯 /緊貼竟杯182，其上施加一負偏壓以吸收正離子；電子引出電極184上 把加，偏壓以引出電子，阻隔器185用於防止電能外漏，放 入，其一般為氬氣。 ㈣本實把例之柄具拋光裝^進行抛光，最終所得之模具之^可至〇2 奈米~1奈米》 π® 1還可為其他麵的，如射_子源或微雜子源，其栅極可 採用與本實施例相同之結構。 之拋光裝置可利用離子束進行拋光，以下將結合 實似月-種八有拋光品質檢測及反饋系統之模具抛光裝置。 7 ⑧ 1331081 參閱第三圖，本實施例之模具拋光裝置200包括底座21、離子源以、 檢測系統23及控制系統24。底座21用於安裝離子源22，且底座21可帶 動離子源22移動以對準待拋光基底表面，控制系統24用於控制底座21 = 離子源22可為上述實施例中所述之離子源。1331081 IX. Description of the Invention: [Technical Field to Which the Invention Is Applicable] The present invention relates to a mask-lighting I, a yuh, and a spectator. [Prior Art] Mass production using a mold has the advantages of low cost and high processing precision, and thus the mold is widely used in the industry. In order to obtain a workpiece with a smooth surface and high dimensional accuracy, the mold is required to have a smooth surface, so that the mold needs to be polished after it has been shaped. Since the specific product or component has various complex shapes or microstructures, the corresponding mold surface also has a corresponding shape and microstructure. 'For these reticular or microstructures, mechanical polishing cannot be performed'. Alternative polishing methods include electrical discharge machining. (Electrical Discharge Maehining, EDM EDM polishing has high processing flexibility and can polish complex structures. However, the surface roughness obtained by polishing by EDM method is still high, and the center line average surface roughness (Ra) ) is larger than 1 micrometer (μπι). [Summary of the invention] It is necessary to provide an ion source; and a seed source to obtain a smoother surface mold polishing device. - Lion source, which includes a cavity and a cathode, a cathode, a screen, an accelerating pole, and an adjustable screen, the cathode being disposed adjacent to the cathode filament, the screen, the accelerating pole and the so-called pole The negative (four) is placed, and the electric health of the upper screen is reduced, and the adjustable screen electrode includes a through hole, and the size and shape of the through hole are adjustable, so that the size and shape of the ion beam cross section can be adjusted by using the Wei hole. The mold is thrown, which comprises an ion source, the ion beam is emitted by the ion beam, and the impurity source includes a cavity and a cathode filament, a cathode, a pole, and a cathode disposed in the cavity. - accelerating pole and - adjustable screen pole 'the cathode close to the cathode lamp, the screen pole, the force port speed pole and the deductible sub-micro pole setting, the financial screen pure bracket - the rail, the size and shape of the through hole The singer, the size and shape of the silk surface of the scales. The ion source (4) ray through hole can adjust the shape of the ion source and correct the size of the ion city surface and the large 8 1331081 small. The ion beam emitted by the source is finely polished, which can be used to change the surface and size of the fresh surface. It can be finely polished first, and finally the average surface roughness of the center line can be obtained on the smooth surface of 0.W nanometer. The present invention will be described in detail below with reference to the accompanying drawings and embodiments. Referring to the drawings, the mold polishing apparatus of the present embodiment includes an ion source i, and the ion source includes a cavity 1G and a cathode filament disposed in the cavity 1G. u, electromagnetic shielding 14, screen 15, acceleration pole 16, adjustable screen 17 and _ and i8. cathode Inlet: gas inlet 101, the material of the outer casing of the cavity 10 may be quartz. The gas US gas 'discharge gas may be an inert gas, such as helium, neon, or argon, which is disposed on the core of the electromagnetic wire, which may be tungsten. When the basin is in the middle of the flow, the electrons ηι can be emitted. The electrons (1) collide with the gas molecules 112 in the cavity (4) generated by the electromagnetic coil 12 to cause the gas molecules ιΐ2 to be released, and the gas production 113 can also collide with the gas molecules 112. The cathode 13 is a cone=', and includes a cathode through hole 131. The cathode 13 can be disposed adjacent to the cathode filament 12. In this embodiment, the =13 tapered bottom end is fastened to the electromagnetic coil 12, and the upper portion thereof is applied thereto. The cathode filament u is low on the pole 2 13 = the magnetic coil 12 _ out of the positive ion 113 and part of the electron 111 are passed through the cathode accepting molecule (1), in order to prevent the yin can be oxygen her, magnesium oxide or: _. + cathode material 14, _ 14 material = pole = upper applied with a lower voltage than the cathode 13, so the positive ions ι ΐ 3 are attracted by the screen a, when the positive ions 113 move to the screen 15, a part of the collision The positive ions of the screen through hole 151 provided on the screen 15 on the screen 15 move toward the accelerating pole 16. The potential of the accelerating pole 16 is further lowered than the screen pole 15, the positive ion ιΐ3 _U61 ' and the 161 phase with the miscellaneous ship 151'. If the kinetic energy of the positive ion 113 is insufficient, even if it passes through the screen 15, 'Ή, '16 attracts 'therefore the accelerating pole 16 It also plays a screening role so that the emitted ion 8 B31081 beam has the speed of the car's direction, so it has a strong glare ability. After passing through the accelerating pole 16, the positive ions 113 move toward the adjustable screen π, and a voltage lower than the accelerating pole 16 can be applied to the adjustable screen 17 to further accelerate the positive ions 113. The adjustable screen electrode 17 includes a through hole 171. In this embodiment, two movable baffles 172 are used to adjust the size of the through holes 171. An adjustable screen 17 having through holes 171 of different sizes or shapes can also be replaced. The size and shape of the through hole 171 are adjustable, so that the through hole 171 can be used to adjust the shape and size of the most illuminating ion beam domain, thereby achieving more precise polishing. #表题验小 areas Need to carry out the introversion, the adjustable rotor beam makes the thief lie small, and the ion beam is damaged by the ion beam to the substrate to be polished except the smaller area. When fine polishing is required, the area can be separated to make the ion beam more dispersed and the polishing more uniform. The positive ion beam of the neutralizer 18 Lin towel and the material (4). _ Zhengxuan beam is polished when the positive ion beam bombards the surface of the substrate to be polished, the surface of the substrate is bombarded (4), and the positive charge in the positive ion beam is transferred to the base surface, which can form an electric field, hindering the subsequent throwing of the right, The positive ion beam emitted by the neutralizer 18 and the ion source , can improve the polishing performance of the positive ion beam. The neutralizing H 18 may be a hot wire type "hot wire towel" and a combustible wire or a group of wires emitting electrons to neutralize the positive ion beam emitted from the through hole 171. Referring to the second figure, here, the neutralizer 18 can also be replaced by an electric bridge type neutralizer (the ρ _ 咖 NeUtralizei•, (10). The electric bridge type neutralizer includes a copper ring (8), a cup i82, an ion collecting cup. 183, the electronic extraction electrode 184 and the blocker 185. A 13% million RF power source is applied to the copper ring 181, and the electromagnetic wave is lightly introduced into the cup 182 to produce a sputum; the ion collecting cup/close to the cup 182, and a GP is applied thereto The negative bias is used to absorb the positive ions; the electron extraction electrode 184 is biased to extract the electrons, and the blocker 185 is used to prevent the leakage of the electrical energy, which is generally argon. (4) The handle of the case is polished. Mounting ^ polishing, the resulting mold can be ~ 〇 2 nm ~ 1 nm" π ® 1 can also be other surfaces, such as the source of the source or micro-heterogen source, the gate can be used with this The same structure as the embodiment. The polishing apparatus can be polished by an ion beam, and the following will be combined with a mold polishing apparatus which has a polishing quality detection and feedback system. 7 8 1331081 Referring to the third figure, the mold of this embodiment The polishing apparatus 200 includes a base 21, an ion source, a detection system 23, and System 24. The base 21 is used to mount the ion source 22, and the base 21 can drive the ion source 22 to move to align with the surface of the substrate to be polished, and the control system 24 is used to control the base 21 = the ion source 22 can be described in the above embodiment The ion source.
根據不同檢測精度之需求，檢測系統23可為多種形式，微米級之粗缝 度，檢測系統23可採用菲索(Fizeau)干涉儀。更精確一點之檢測系統23可 採用偏振光干涉式或諾瑪斯基(N〇marshi)顯微鏡，其能測量到之精確度受限 於測量光波波長λ，解析度為1·22λ。若要檢測更微細之粗糙度可用等色序 條紋(FringesofEqualChromaticOrcier)干涉儀，其係結合多光束干涉儀與光 譜儀之組合’精確度可至1奈米(nm)以下。 根據檢測系統23檢測到之基底表面粗糙度，控制系統24可決定是否 繼續進行拋光，直至基底表面粗糙度滿足要求。 本實施例中採用一檢測系統23檢測待拋光基底表面粗糙度，控制系统 24根據檢測到之粗糙度進行拋光動作，可實現拋光過程之自動進彳^。，、、 參閱第四圖，相較於模具拋光裝置200，本實施例之模具拋光裝置3〇〇 2包括-存儲器35及一輸入裝置36，存儲器35用於存儲待拋光基底表面 …構信息，如長度、寬度及表面微結構信息，輸入裝置36用於向存儲器％ 中輸入上述表面結構信息。 參閱第五圖，使用上述實施例之模具拋光裝置3〇〇對模具表 光之方法包括以下步驟： 乂驟卜提供—待拋光模具。此處之模具可為各種材質，如帶有鎳磷鍍 曰之不鏽鋼，不鑛鋼、合金鋼、陶瓷如碳化鎢或碳化矽、玻璃或玻璃陶瓷。 步驟2，利用輸入裝置36將待拋光模具表面結構信息輸入到存儲器％ 内0 〇 制=3 ’利用控制系統34 ’根據存儲器35存儲之模具表面結構信息控 離子源32對該待拋光模具表面進行拋光。 担·《•光過&中，檢測系統幻檢測待拋光基底表面粗糙度，控制系統24 據檢測到之粗链度進行拋光動作，直至該待拋光模具表面粗輪度滿足要 來0 1331081 綜上所述，本發明確已符合發明專利之要件’遂依法提出專利申請。 惟，以上所述者僅為本發明之較佳實施方式，自不能以此限制本案之申請 專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或 變化，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 第一圖係本實施例之離子源結構剖面示意圖。 第=圖係本實施例使用之電漿橋式中和器示意圖。 第二圖係本實施例之模具抛光裝置示意圖。Depending on the requirements of the different detection accuracies, the detection system 23 can take a variety of forms, with a coarse pitch of micrometers, and the detection system 23 can employ a Fizeau interferometer. A more precise detection system 23 can employ a polarized light interferometer or a N〇marshi microscope, the accuracy of which can be measured is limited to the wavelength λ of the measured light wave, with a resolution of 1·22 λ. To detect finer roughness, the Fringes of Equal Chromatic Orcier interferometer can be combined with a multi-beam interferometer and a spectrometer with an accuracy of less than 1 nanometer (nm). Based on the surface roughness of the substrate detected by the inspection system 23, the control system 24 can determine whether to continue polishing until the surface roughness of the substrate meets the requirements. In this embodiment, a detection system 23 is used to detect the surface roughness of the substrate to be polished, and the control system 24 performs a polishing operation according to the detected roughness, so that the automatic process of the polishing process can be realized. Referring to the fourth figure, in comparison with the mold polishing apparatus 200, the mold polishing apparatus 3〇〇2 of the present embodiment includes a memory 35 and an input device 36 for storing the surface information of the substrate to be polished. The input device 36 is configured to input the above surface structure information into the memory %, such as length, width, and surface microstructure information. Referring to the fifth drawing, the method of using the mold polishing apparatus 3 of the above embodiment to illuminate the mold comprises the following steps: 乂 提供 - providing a mold to be polished. The molds here can be of various materials, such as stainless steel with nickel-phosphorus-plated tantalum, non-mineral steel, alloy steel, ceramics such as tungsten carbide or tantalum carbide, glass or glass ceramics. Step 2, using the input device 36 to input the surface structure information of the mold to be polished into the memory % 0 〇 = 3 ' using the control system 34 ' according to the mold surface structure information stored in the memory 35 to control the ion source 32 to the surface of the mold to be polished polishing. In the light source &, the detection system phantomly detects the surface roughness of the substrate to be polished, and the control system 24 performs the polishing operation according to the detected thick chain degree until the rough rotation of the surface of the mold to be polished satisfies to be 0 1331081 As described above, the present invention has indeed met the requirements of the invention patent '遂 patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application in this case. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic cross-sectional view of the ion source structure of the present embodiment. Fig. = is a schematic view of a plasma bridge type neutralizer used in this embodiment. The second drawing is a schematic view of the mold polishing apparatus of this embodiment.
第四圖係本實施例之模具拋光裝置示意圖。 第五圖係採用上述實施例之模具拋光裝置進行抛光之方法流程The fourth figure is a schematic view of the mold polishing apparatus of this embodiment. The fifth figure is a flow of the method of polishing using the mold polishing apparatus of the above embodiment.
【主要元件符號說明】 離子源 1 陰極燈絲 11 陰極 13 屏極 15 可調屏極 17 電子 111 正離子 113 屏極通孔 151 通孔 171 銅圈 181 離子收集杯 183 阻檔器 185 離子源 22 ’ 32 控制系統 24，34 輸入裝置 36 腔體 10 電磁線圈 12 陰極遮蔽 14 速極 16 氣體入口 101 氣體分子 112 陰極通孔 131 加速極通孔 161 擋板 172 瓷杯 182 電子收集器 184 底座 21 檢測系統 23，33 存儲裝置 35 9[Main component symbol description] Ion source 1 Cathode filament 11 Cathode 13 Screen 15 Adjustable screen 17 Electron 111 Positive ion 113 Screen through hole 151 Through hole 171 Copper ring 181 Ion collecting cup 183 Blocker 185 Ion source 22 ' 32 Control system 24,34 Input device 36 Cavity 10 Electromagnetic coil 12 Cathode shield 14 Speed pole 16 Gas inlet 101 Gas molecule 112 Cathode through hole 131 Accelerator pole through hole 161 Baffle 172 Porcelain cup 182 Electron collector 184 Base 21 Detection system 23,33 storage device 35 9