B28886 九、發明說明： 【發明所屬之技術領域】 本發明為一種發光二極體結構，特別為一種應用於高電 境下之高功率發光二極體結構。 衣 【先前技術】 美國專利公開第6,853,011號’揭露了一種發光磊晶層結 其一端包含有一吸光型的臨時基材，而另一端藉由苯環丁烯 一透光的透明基材。然後將吸光型臨時基材之部份被移除。 發光二極體結構形成一連接通道以連接第一歐姆接觸電極，以 形成一絕緣溝槽以將發光二極體結構之作用層分離成兩個 然後，一第二歐姆接觸電極形成在披覆層上、一接合金屬層& 於第一通道内並成功的形成在第二歐姆接觸電極上。因為^個接 合金屬層具有相同的高度’因此所產生的發光二極體結構能 便的適用於覆晶結構中。 乃 美國專利公開第6,998,642號，揭露了 一種具有二個發光二 體在串聯狀態下之半導體結構。上述半導體結構包含了兩個 相同堆疊結構的發光二極體，並且藉由絕緣溝槽使兩者隔離:、上 ，堆4結構從底部_成〜導熱基材；—絕緣賴層；一金屬黏 著層；一反射保護層；一 P型輯連接蠢晶層；一上披覆層；二 作用層以及-下披制。屬於兩個發光二極體之兩個p型^姆接 觸金屬電極，被形成於-個介於反射賴層及歐姆接觸轰晶層間 的介面上，並且被埋設於反射保護層内。 上述堆璺結構具有一第一溝槽形成於上坡覆層内以及電性至 P型電極。絕緣溝槽被形成自上披覆層至絕緣保護層。兩個n型 電極被形成在兩個發光二極體之下披覆層上。 滿絕緣溝槽以及覆蓋第—溝槽之側邊。所以當—金屬=體= 5 丄⑽886 刑♦，光一極體之P型歐姆接觸電極及第一發光二極體之N 電極時，它可以電性隔離第二發光二極體之堆疊結構。 ，η號雖然可以應用於覆晶結構中，但若無第二基材 二=:)’顺法進行兩個發光三鋪間之連接，且在作覆晶製 處理多個晶片，增加製程複雜度。6,998,642號案雖 為、-ϋ兩顆發光二極體間的電性連接，但利用金屬接合，必 問』。^·的製程方能達成’因此在生產效能及成本上均易產生 i屬連接㈣ϊΐ整絕緣層經設置於兩發光二極體交界處，因次 更複雜的電Si接於兩個導電板間，若無第：細,1無法進行 【發明内容】 二極發光二極體結構，其能更便_進行發光 極體姓連接，使得更複射操作在高_境獨發光二 極體、'，σ構早體，能更容易的製造。 -笛述之功效，本發明提供—種發光二極體結構’其包括： 第-ί—表面及—第二表面；—黏著層，形成於 i曰ίί ’石苐—歐姆連接層，形成於黏著層上；至少二 層間形成有一第一溝槽，每一遙晶層，其具有： 址薄ϊ覆層，域於—第—歐姆連接層上；—作闕，形成於下 =層上；以及-上披覆層，形成 — ^=每;第_連接層及每—上披覆層其裸露=表^=形 =任二苐—歐姆連接層間，第—絕緣層於每-上披覆層及每一 第:=連以=部處’分別形成有一第一開孔及二第二開 狀分細彡成於每，且 開孔内，且娜成於每一第二 6 B28886 為達上述之功效，本發明又提供一種發光二極體結構，其包 括：一第一基材，具有一第一表面及一第二表面；一黏著層/，形 成於，一表面上；至少二第一歐姆連接層，形成於黏著層丄；至 少二磊晶層，每一磊晶層，其具有：一下披覆層，形成ς一第一 歐姆連接層上；-伽層，形成於下彼覆層上；—上披覆形 成於作用層上；以及—第二溝槽，垂直貫穿上披覆層及作;層， 又局部貫穿下賴層；—第二絕緣層，覆蓋於每―上披覆層上， 層及任二第一歐姆連接層間，第二絕緣^於上 披覆層上及第二溝槽内侧，分別形成有—第三開孔及—第四開 孔，至少二第五導電板，分卿絲每“第三開孔内，且電性連 上ί覆層；以及至少二第六導電板，分卿成於每一第四 具有向τ延伸之—延伸部，延伸部垂直貫穿該蟲晶層， 且電性連接於該第一歐姆連接層。 藉由本發明的實施，至少可以達到下列之進步功效： —、:導體製程簡單，除第二基材需要新光罩外，發光二極體結 構可沿用現有之製程。 二、相同的發光二極體結構，可藉由第二基材進行不同的連接電 路（mterC0nnecti0n)佈局，使得複雜連接電路的變化及嗖 _計’變得更為簡單及容易達成。 二、才目較於高溫金屬接合而言’ _低_著層具有低溫、高良 早及低成本之功效。 四 複雜的連接f路簡化後，將更容易製造出體積小、亮产高之 巧二極體之晶>1單體，使得二極體發光裝置的體積更^、、 重篁更輕。 【實施方式】 =本剌㈣織實施方式’聽合圖树最佳實 ，、赠明如下。以下實施例中’發光二極體結構的各層結構，係= 7 1328886 習知之半導體成型技術加以製造，其細節將不再贅述。又爲避免 冗長的描述，特將『蝕刻製程』或『蝕刻方式』等用詞，定義為 涵蓋整個完整黃光製程的簡稱。又本發明之發光二極體係可形成 多維之陣列，並非限定於實施例中之數量。以上合先敘明。 【第一實施例】 第1A圖係為一第一基材21與前製程發光二極體結構1〇尚 未結合之實施例圖。第1B圖係為一第一基材21與前製程發光二 極體結構10結合後之實施例圖。第lc圖係將第1B圖之臨時基 材11及蝕刻終止層12去除後之立體實施例圖。 二般發光二極體結構的製造，係以半導體製程方式，將尚未 進行單元分割及未完成其它絕緣層及導電板之前製程發光二極體 士構1。，械於-晶圓—㈣上。但實際發光二極體結構應用時， t晶圓厚度過厚轉有不透糾特性，·無法加以應用而必 ^除。所以晶圓只是製造發光二極體結構過程中—臨時性的基 材，也就是臨時基材11。 # 時基材11的方法中，蝴方式是最常使用的— ϋ社光二極體結構於侧過程中’不會隨刻過度而 體rf構的損傷，因此會設置—佩終止層12。侧 姓刻的過程中，大部分亦會被侧掉，藉由侧 的作用，可以達到保護發光二極體結構之功效。完成上 魏程f ’即可產生前製程之發光二極體結構。 20，不，本實關為—種發光二極體結構 26以及至少二電板27第―絕緣層25、至少二第一導電板 第一基材2卜具有一第—表面211及 土材21主要伽以支撐整個發光二極體結構μ。^―基材η可 8 13.28886 、為夕晶體或—非晶體結構之基材，例如玻璃 Ϊ =)、蓋貝石(哪沖㈣、碳化石夕(SiC)、碟化鎵（GaP)、磷碎化 ΪΙΖ)、硒化鋅(Ζ_、硫化辞(ZnS )或硒硫化鎢(AmSSe)… 成ί基材。此外、第-基材21可以為—透明基材或〆 „1_其主要係依照發光二極體結構20之出光方向或反射 ’若要同時引導出向上/向下的雙向出光，則第一 基材21必須為一透明基材。 黏著層22 ’形成於第一表面211上，其用以結合第一基材21 ，弟-歐姆連接層23。黏著層22係可選自—苯環丁烯(B_staged ^nzocydobutene’BCB)、-環氧樹脂(epQxy)、—赠(sili_)、一 聚曱基丙烯酸甲酯(polymethyl methacry，pMMA)、一聚合物 (polymer)^ —旋轉塗佈玻璃(Spin 〇n giass，s〇G).·.等其中之一種 =貝黏著層22可以為一透明黏著層22或一非透明黏著層， ^亦依照發光二極體結構2〇之出光方向或反射層之設計而考 f，右要同時引導出向上/向下雙向出光，則黏著層22 透明黏著層22。 第^圖係為本發明之發光二極體結構20，其完成單元分割後 之剖視貫施姻。所有本發明之發光二極體28係包括第一歐姆連 接層23及μ蟲晶層24 ’其均設置於相同的第一基材」及黏著層22 上，因此單元分贿需針料—輯連接層23及蟲晶層24進 分割’並形成例如八卜Α2、Α3…或者6Α圖之β1、Β2 單元。 寻 第I姆連接層23形成於黏著層22上，第一歐姆連接層23 可以為一ρ型歐姆連接層，而且縣在晶圓上成型之第-歐姆連 接層23，其可藉由餘刻方式，以區分出不同的單元。 磊晶層24，其為一發光二極體28單體，其亦藉由蝕刻的方 式以區分出不同的單元々晶層24亦藉由侧製程以形成第—溝 9 1328886 槽291。第一溝槽291的形成，將使得第一歐姆連接層23產生一 局，裸露的裸露部231 ’因而能方便第二導電板27的設置，也因 為第二導電板27的設置’所以不同單元的發光二極體28，能方 便的進行串/並聯的設計’因而使得高壓的發光二極體28得以輕 易的製成。B28886 IX. Description of the Invention: [Technical Field] The present invention is a light-emitting diode structure, particularly a high-power light-emitting diode structure applied in a high electric environment. [Prior Art] U.S. Patent No. 6,853,011 discloses a luminescent epitaxial layer having a temporary substrate having a light absorbing type at one end and a transparent transparent substrate having benzenecyclobutene at the other end. A portion of the light absorbing temporary substrate is then removed. The light emitting diode structure forms a connection channel to connect the first ohmic contact electrode to form an insulating trench to separate the active layer of the light emitting diode structure into two, and then a second ohmic contact electrode is formed on the cladding layer The upper and the bonding metal layer & are in the first channel and are successfully formed on the second ohmic contact electrode. Since the two bonding metal layers have the same height', the resulting light-emitting diode structure is easily applied to the flip-chip structure. A semiconductor structure having two light-emitting diodes in series is disclosed in U.S. Patent No. 6,998,642. The semiconductor structure comprises two light emitting diodes of the same stack structure, and the two are separated by an insulating trench: upper, the stack 4 structure is from the bottom to the heat conductive substrate; the insulating layer; the metal bonding a layer; a reflective protective layer; a P-type connection to the stupid layer; an upper cladding layer; two active layers and - under the coating. Two p-type contact metal electrodes belonging to the two light-emitting diodes are formed on an interface between the reflective layer and the ohmic contact crystal layer, and are buried in the reflective protective layer. The stacking structure has a first trench formed in the uphill cladding and electrically connected to the P-type electrode. The insulating trench is formed from the upper cladding layer to the insulating protective layer. Two n-type electrodes are formed on the underlying layers of the two light-emitting diodes. Fully insulated trenches and cover the sides of the first trench. Therefore, when the metal=body=5 丄(10)886 ♦, the P-type ohmic contact electrode of the light-polar body and the N-electrode of the first light-emitting diode, it can electrically isolate the stacked structure of the second light-emitting diode. Although the η number can be applied to the flip-chip structure, if there is no second substrate two =:)', the connection between the two illuminating three-ply is performed, and the plurality of wafers are processed by the overmolding process, thereby increasing the complexity of the process. degree. Although the case of No. 6,998,642 is an electrical connection between two light-emitting diodes, it is necessary to use metal joints. The process of ^· can be achieved. Therefore, it is easy to produce i-genus connection in production efficiency and cost. (IV) The insulating layer is disposed at the junction of the two light-emitting diodes, and the more complicated electric Si is connected between the two conductive plates. If there is no: fine, 1 can not be carried out [invention] Two-pole light-emitting diode structure, which can be more convenient _ to carry out the connection of the light body name, so that the more complex operation in the high-independence light-emitting diode, ' , σ-structured early body, can be manufactured more easily. - The effect of the flute, the present invention provides a light-emitting diode structure 'which includes: a first surface - and a second surface; an adhesive layer formed on the i曰ίί 'stone-ohmic connecting layer, formed in On the adhesive layer; at least two layers are formed with a first trench, each of the crystal layer having: a thin tantalum coating layer on the first-ohmic connecting layer; and a germanium layer formed on the lower layer; And - the upper cladding layer, forming - ^ = each; the _ connection layer and each of the upper cladding layer exposed = table ^ = shape = any two 苐 - ohmic connection layer, the first insulation layer on each - overlying The layer and each of the:====================================================================================== The present invention further provides a light emitting diode structure comprising: a first substrate having a first surface and a second surface; an adhesive layer/, formed on a surface; at least two An ohmic connecting layer formed on the adhesive layer; at least two epitaxial layers, each of the epitaxial layers having: a lower cladding layer to form a germanium layer a first ohmic connection layer; a gamma layer formed on the lower cladding layer; an upper cladding layer formed on the active layer; and a second trench extending vertically through the overlying cladding layer and the layer; a second insulating layer covering each of the upper cladding layers, between the layers and any of the first ohmic connecting layers, the second insulating layer on the upper cladding layer and the inner side of the second trench, respectively formed a third opening and a fourth opening, at least two fifth conductive plates, each of the "three third openings, and electrically connected to the 覆 coating; and at least two sixth conductive plates, respectively Each of the fourth extensions extending toward the τ extends perpendicularly through the worm layer and is electrically connected to the first ohmic connection layer. By the implementation of the present invention, at least the following advancements can be achieved: : The conductor process is simple, except that the second substrate requires a new mask, the LED structure can follow the existing process. 2. The same LED structure can be connected by a second substrate ( mterC0nnecti0n) layout, making changes in complex connection circuits and 'It's easier and easier to achieve. Second, it's better than high-temperature metal joints' _ low _ layer has low temperature, high early and low cost. Four complex connections f road simplifies, it will be easier A small-sized, high-producing, high-crystal diode crystal>1 monomer is produced, so that the volume of the diode light-emitting device is more compact, lighter and lighter. [Embodiment] = Beneficial (four) weaving embodiment The listening picture tree is the best, and the gifts are as follows. In the following embodiments, the structure of each layer of the light-emitting diode structure is manufactured by the conventional semiconductor molding technology, and the details will not be described again. For the description, the words "etching process" or "etching method" are defined as abbreviations covering the entire complete yellow light process. The light-emitting diode system of the present invention can form a multi-dimensional array, which is not limited to the embodiment. Quantity. The above is a combination of the first. [First Embodiment] Fig. 1A is a view showing an embodiment in which a first substrate 21 and a front process light-emitting diode structure 1 are not combined. Fig. 1B is a view showing an embodiment in which a first substrate 21 is bonded to the front process light emitting diode structure 10. Fig. 1c is a perspective view showing a state in which the temporary substrate 11 and the etch stop layer 12 of Fig. 1B are removed. The fabrication of the diode-shaped diode structure is based on a semiconductor process, and the process of light-emitting diodes is not performed before the cell is divided and the other insulating layers and the conductive plates are not completed. , on the - wafer - (four). However, when the actual light-emitting diode structure is applied, the thickness of the t-wafer is too thick to have an anti-transparent property, and it cannot be applied and must be removed. Therefore, the wafer is only a temporary substrate in the process of fabricating a light-emitting diode structure, that is, a temporary substrate 11. In the method of the substrate 11, the butterfly method is the most commonly used - the ϋ 光 光 光 光 光 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ 终止 终止 终止 终止 终止 终止 终止 终止 终止In the process of engraving the side, most of it will be sideways, and the effect of protecting the structure of the light-emitting diode can be achieved by the action of the side. Upon completion of the upper process, the light-emitting diode structure of the front process can be produced. 20, No, the present embodiment is a light-emitting diode structure 26 and at least two electric plates 27, the first insulating layer 25, at least two first conductive plates, the first substrate 2 has a first surface 211 and the soil material 21 The main gamma supports the entire light-emitting diode structure μ. ^—Substrate η 8 8.28886 , Essence of crystal or amorphous structure, such as glass Ϊ =), gabbing (Which (4), carbon carbide (SiC), gallium (GaP), phosphorus Broken bismuth), zinc selenide (Ζ_, sulphide (ZnS) or selenium sulphide (AmSSe)... into a substrate. Further, the first substrate 21 may be a transparent substrate or a 〆„1_ According to the light-emitting direction or reflection of the light-emitting diode structure 20, the first substrate 21 must be a transparent substrate if the upward/downward bidirectional light is simultaneously guided. The adhesive layer 22' is formed on the first surface 211. The bonding layer 22 can be selected from the group consisting of benzocyclobutene (B_staged ^nzocydobutene 'BCB), epoxy resin (epQxy), and gift (sili_). ), polymethyl methacry (pMMA), a polymer (polymer) ^ spin coating glass (Spin 〇n giass, s〇G).. etc. one of them = shell adhesive layer 22 It can be a transparent adhesive layer 22 or a non-transparent adhesive layer, ^ also according to the light-emitting diode structure 2 出 light direction or reflective layer design, the right to the same When the upward/downward bidirectional light is guided, the adhesive layer 22 is transparently adhered to the layer 22. The second embodiment is the light-emitting diode structure 20 of the present invention, which completes the cross-sectional division after the unit division. The light-emitting diode 28 includes a first ohmic connecting layer 23 and a μ-crystal layer 24' which are both disposed on the same first substrate and the adhesive layer 22, so that the unit needs to take a needle-series connection layer 23 and The worm layer 24 is divided into 'and forms a unit of β1, Α3, or Α3, for example, or a Α2 unit. The imaginary connection layer 23 is formed on the adhesive layer 22, and the first ohmic connection layer 23 may be a p-type An ohmic connection layer, and a first ohmic connection layer 23 formed on the wafer by the county, which can be distinguished by different means to distinguish different units. The epitaxial layer 24, which is a single body of a light-emitting diode 28, It also etches to distinguish different cell twin layers 24 and also by side process to form a trench 9 1328886 trench 291. The formation of the first trench 291 will cause the first ohmic connecting layer 23 to generate a The bare exposed portion 231' can thus facilitate the setting of the second conductive plate 27, For the second conductive plate 27 'of the different units of the light emitting diode 28, it can be convenient series / parallel design' thus making the high-pressure light-emitting diode 28 is made of a light and easy.
h第3A圖係為第2圖進行第一次蝕刻之製作方法實施例圖。 第3B ^係為第3A圖完成後再次進行第二次蝕刻之製作方法實施 例，。第一歐姆連接層23的單元分割及第一溝槽291的製作，可 以藉由不同的蝕刻步驟達成之。在眾多蝕刻步驟中，第一次蝕刻， ，先蝕刻出與兩個第一歐姆連層間相同大小及相對位置的缺口， 第二次蝕刻，係於第一次蝕刻後再蝕刻出第一溝槽291的大小， 此種方式可使製程較為簡便。 、每一磊晶層24，其至少具有：一下披覆層24卜一作用層242 以及-上披覆層243。每-下披覆層241，形成於一第一歐姆連接 層23上，下披覆層241係可以為一 p型礙化铭銦鎵(A1G福^披 覆層二作用層(active layer)242，形成於下披覆層241上，其可以 為一單異質結構(Single Hetero-structure，SH)、一雙異質結構 (Double Heten>stmcture，DH)或一多量子阱結構(MultipkQu=um WellS，MQW)。上披覆層243，形成於作用層242上，上披覆層243 可以為一 N型磷化鋁銦鎵披覆層。上披覆層2犯與第一導電曰 間，亦可進一歩形成有一第二歐姆連接層。 第二圖^第2圖進-歩完成第—絕緣層25及導電板後之剖視 貝包例圖。f 一絕緣層25係例如氧化石夕(Si〇)之材質，宜 ^第-歐姆連接層23及每-上披覆層243其裸露之表面覆= 成於任二匕_連接層23間。藉由第—絕緣層Μ的設置，= 了 28完全隔離不互相影 ^ 保發光二鋪28不受外界魏，例如：缝或減的影響 vmm 舞命。第絕緣層25於每一上披覆層243及每一第一歐姆連接層 23其裸露部231處，分別形成有一第一開孔及一第二開孔 =2，第一開孔251及第二開孔252係於第一絕緣層25製作完成 後’再以餘刻方式加以製成。 ^第一導電板26，分別形成於每一單元的第一開孔251内，且 ，巧接於，對應的上彼覆層243。第二導電板π ’分別形成於 ^-單兀，第二開孔252内，且電性連接於相對應的第一歐姆連 =23。藉由第一導電板26及第二導電板27之設置以提供電力， 使得磊晶層24能接收電力產生發光之作用。hFig. 3A is a diagram showing an example of a method of fabricating the first etching in FIG. The third embodiment is an embodiment of a method of fabricating the second etching again after completion of the third drawing. The cell division of the first ohmic connection layer 23 and the fabrication of the first trench 291 can be achieved by different etching steps. In the plurality of etching steps, the first etching is performed to etch a gap of the same size and relative position between the two first ohmic layers, and the second etching is performed after the first etching to etch the first trench. The size of 291, this way makes the process easier. Each epitaxial layer 24 has at least a lower cladding layer 24 and an upper cladding layer 242 and an upper cladding layer 243. Each of the lower cladding layers 241 is formed on a first ohmic connecting layer 23, and the lower cladding layer 241 may be a p-type infiltrated indium gallium (A1G Fu-clad layer active layer 242) Formed on the lower cladding layer 241, which may be a single heterostructure (Single Hetero-structure, SH), a double heterostructure (Double Heten > stmcture, DH) or a multiple quantum well structure (MultipkQu = um WellS, MQW). The upper cladding layer 243 is formed on the active layer 242, and the upper cladding layer 243 may be an N-type aluminum indium gallium arsenide coating layer. The upper cladding layer 2 is made between the first conductive layer and the first conductive layer. Further, a second ohmic connection layer is formed. Fig. 2 is a cross-sectional view of the insulating layer 25 after the completion of the first insulating layer 25 and the conductive plate. f An insulating layer 25 is, for example, oxidized stone (Si The material of the 〇), the first ohmic connecting layer 23 and the exposed surface of each of the upper cladding layers 243 are formed between the two layers _ the connecting layer 23. By the setting of the first insulating layer ,, = 28 complete isolation does not affect each other ^ Guaranteed light two shop 28 is not subject to external Wei, for example: seam or subtraction effect vmm dance life. The first insulating layer 25 on each of the upper coating layer 243 and each The first ohmic opening and the second opening 252 are formed in the exposed portion 231 of the ohmic connecting layer 23, and the first opening 251 and the second opening 252 are formed after the first insulating layer 25 is completed. The first conductive plates 26 are respectively formed in the first opening 251 of each unit, and are respectively connected to the corresponding upper cladding layer 243. The second conductive plates π 'respectively Formed in the ^-single, the second opening 252, and electrically connected to the corresponding first ohmic connection = 23. By the arrangement of the first conductive plate 26 and the second conductive plate 27 to provide power, so that The layer 24 is capable of receiving electricity to produce luminescence.
冨發光—極體結構20設計成一面上(face叩)結構時。此時將 $—基材21設計為一透明基材，且將黏著層22設計為一透明黏 層22 ’並且於第一基材21之第二表面212上形成一反射層（圖 未不）’將可藉由反射層將蠢晶層24所發之光進行反射，如此可 使，光一極體結構2。達到較佳的出光效率。除此之外，亦可只將 黏J層22設計成為-透明黏著層η，並且將反射層(圖未示〉形成 於第-基材21絲著層η之間，如祕可達到統射之作用， 同樣的使得發光二_結構2〇達到較佳的出光效率。 第5A圖係為本發明之發光二極體結構2〇進一步結合一第二 =50之剖視實施例圖(沿第5B圖之A_A赚）。第5b圖係^ ^ A圖之俯視實施姻。第5C _為第5A圖之等效電路圖。 發光二極體結構2G ’進-步包括—第二基材5()，如此可產生 =構在覆晶結構中，第—基材21係為—透明基材且 黏著層22/系，-透明黏著層22。第二基材5〇其至少具有一第三 =5卜第三表面51形成有至少二第三導電板52及至少二第四 =板53，每-第三導電板52及第四導電板幻，分別藉由焊點 笔，，接於相對應之第-導電板26及第二導電板27。 第三導電板52及第四導電板53間，除了可以直接將導電板 1328886 積擴大，而使彼此互相電性連接外，亦可於第二基材邓形 複數條電路結構(圖未示）’贱第三導電板52及第四 =電性連接。藉由上述之連接方式可形成複_電路結構。使用 弟二基材50的優點，將使得不同發光二極體28間的串/並 材5〇上進行。由於第二基材5〇的面積及厚度可以有 ’因此^以應付非常複雜的電路結構。當複雜的電路 、、，。構可以貝'踐時，發光二極體結構2〇的應用將更具多樣性。 第一基材50可以為一石夕基材(siiic〇n substrate)、一印 /印刷電路多層板（Printed Circuit B〇ard，pCB )或一陶瓷基 (ce_c substrate)。例如：氧化鋁(A12〇3)、氮化紹(A1N)、氧^ JBeO)、低溫共燒多層陶瓷（L〇w Temperatoe emmlc，LTCC )或高溫共燒多層陶兗(High 丁咖柯齡c_d Cemmic，HTCC)…等基材。 在覆晶結構的設計中’爲了使發光二極體28有較佳的出光效 於第二基材50的第三表面51上’於第三導電板52及第四 ，板53以外之部位，進一步形成一反射層。亦可於第一絕 25上，也就是第-絕緣層25裸露之表面上形财—反射声。 上述之各個反射層，係可選自於一紹(Α1)、一銀1 一金 _···等其中之-材質加以製成。製作反射料必須注咅、 射層為-導·質時，反射層不能與第三導電板52 ; η接觸，林能與第，輸m導電板η接觸，而且反 ^層最好能與各個導電板保持-㈣間隙，以魏各 產生短路的現象。 第6A圖係為本發曰月之發光二極體結構2〇 第:導體層293之剖視實施例圖（沿第6β圖之Β·Β剖勒。第成6B 圖係為弟6A圖之俯視實施例圖。發光二極體結構2〇，盆進一包 括-第-導體層293，其形成有至少—條導體並覆蓋於第一絕緣 12冨 Luminescence—The polar body structure 20 is designed as a face 结构 structure. At this time, the substrate 21 is designed as a transparent substrate, and the adhesive layer 22 is designed as a transparent adhesive layer 22 ′ and a reflective layer is formed on the second surface 212 of the first substrate 21 (not shown). 'The light emitted by the stupid layer 24 can be reflected by the reflective layer, so that the light-pole structure 2 can be made. Achieve better light extraction efficiency. In addition, it is also possible to design only the adhesive J layer 22 as a transparent adhesive layer η, and to form a reflective layer (not shown) between the first substrate 21 and the silk layer η. The same effect is to make the light-emitting structure 2 〇 achieve better light-emitting efficiency. FIG. 5A is a cross-sectional view of the light-emitting diode structure 2 〇 further combined with a second=50 of the present invention (along the first 5B diagram of A_A earned. The 5th figure is ^^ A top view of the implementation of the figure. The 5C _ is the equivalent circuit diagram of Figure 5A. The light-emitting diode structure 2G 'in step--including the second substrate 5 ( In this way, the first substrate 21 is a transparent substrate and the adhesive layer 22/system, the transparent adhesive layer 22. The second substrate 5 has at least a third = 5b third surface 51 is formed with at least two third conductive plates 52 and at least two fourth=boards 53, each of the third conductive plates 52 and the fourth conductive plate illusion, respectively, by soldering pens, corresponding to the corresponding The first conductive plate 26 and the second conductive plate 27. The third conductive plate 52 and the fourth conductive plate 53 can directly expand the conductive plates 1328886 to make each other electrically In addition, the second substrate may be formed in a plurality of circuit structures (not shown) of the second substrate, and the third conductive plate 52 and the fourth electrode are electrically connected. The complex circuit structure can be formed by the above connection method. The advantage of the second substrate 50 will be to make the string/parallel between the different light-emitting diodes 28. Since the area and thickness of the second substrate 5〇 can be 'so ^ to cope with very complicated circuit structure When the complex circuit, the structure can be modified, the application of the LED structure 2 将 will be more diverse. The first substrate 50 can be a siiic 〇n substrate, a Printed Circuit Board (PCB) or a ceramic substrate (ce_c substrate), for example: alumina (A12〇3), nitriding (A1N), oxygen ^JBeO), low temperature co-fired multilayer A substrate such as ceramic (L〇w Temperatoe emmlc, LTCC) or high-temperature co-fired multi-layer ceramic pottery (High Dingcaoke C_d Cemmic, HTCC). In the design of the flip chip structure, in order to make the light-emitting diode 28 have a better light-emitting effect on the third surface 51 of the second substrate 50, the third conductive plate 52 and the fourth portion other than the plate 53 are A reflective layer is further formed. It is also possible to form a financial-reflective sound on the first surface of the first insulating layer 25, that is, the exposed surface of the first insulating layer 25. Each of the above-mentioned reflective layers may be selected from materials such as: one (Α1), one silver, one gold, and the like. When the reflective material is made, the reflective layer must be filled with the conductive layer, and the reflective layer cannot be in contact with the third conductive plate 52; η, the forest can contact the first and the m conductive plate η, and the reverse layer can preferably be combined with each other. The conductive plate maintains a (four) gap, which causes a short circuit in Wei. Fig. 6A is a schematic diagram of a cross-sectional view of a light-emitting diode structure of the present invention: a conductor layer 293 (along the 6th figure of Fig. 6). The 6th figure is a figure of 6A. In a plan view of the embodiment, the light-emitting diode structure 2 is formed into a body including a -first conductor layer 293 which is formed with at least a strip conductor and covers the first insulation 12
Ii28886 ίΛ?緣層31係例如氧化石夕之材質，其覆蓋於每一上披覆層 露ί表面，並形成於任二蟲晶層24及任二第—歐姆連接 ^曰9由第一絕緣層31的設置，除了可使不同單元的發光 〒完全隔離不互相影響外，亦可確保發光二極體28不受 外，％境，例如：水氣或濕氣的影響而減損壽命。第二絕緣層31 =彼^層243上及第二溝槽34内側，分別形成有—第三開孔 %，第三開孔％及第四開孔36係於第二絕緣層 31製作7D成後，再以蝕刻方式加以製成。 第五導電板32，分別形成於每一第三開孔35内， 接於相對應之上披覆層243。又上披覆層243與第五導電板％間， 二歐姆連接層292。第六導電板33，分別形成於每 wf石内’其具有向下延伸之一延伸部331，延伸部331 藉由J =且„於相對應之第一歐姆連接層23,。 :声24二^六導電板％之設置以提供電力，使得蟲 日日層24此接收電力產生發光之作用。 構3G設計成—面上結猶。崎將第-基材 21叹拍-翻基材’且將黏著層22 =於第-基㈣之第二表面212上形成一反射層， 射層將蟲晶層24所發之歧行反射，如此可使發光 3〇一達到較佳的出光效率。除此之外，亦可只將黏著層22設^成 ίίϊ ΓΞΐΐ2/:將反射層形成於第—基材21與黏著層22 之間’如此亦可達到歧射之侧，同 30達到較佳的出光效率。 于七九一桎體、、.。構 第8圖係為本發明之發光二極體結構30進-步結人一第一其 材50之剖視實施例圖發光二極體結構3()，進括一= 基材50，如此可產生—覆晶結構。在覆晶結構中，第—^ 係為-透明基材且黏著層22係為一透明黏著層22。第二=邓 15 具/i—第二表面5卜第三表面51軸有至少二第：導電 八=二第四導電板53,每—第三導電㈣及 導電= 猎魄點60電性連接於相對應之第五導電板32及第六 之面及第四導電板53間，除了可处接將導電板 有複數結第二練50形成 間雷性遠m 使第二導電板52及第四導電板53 第二其;bMn ^由上述之連接方式可軸娜的電路結構。使用 以G 優點，將使得不同發光二極體28間的串/並電路得 輕Γ上進行。由於第二基材5G的面積及厚度可以有 士此足以應付非常複雜的電路結構。當複雜的電路 、°…_貫堯岭，發光二極體結構30的應用將更具多樣性。 ，二基材5G係可以為—絲材、—印刷電路板/印刷電路多 在覆晶結構的設計中，爲了使發光二極體28有較佳的出光效 ^發可於第、一基材5〇的第三表面51上，於第三導電板52及第四 ^電板53以外之部位’進—歩形成有—反射層。或者亦可於第二 絕緣層31上’也就是第二絕緣層31裸露之表面上形成有一反射 層。 上述之各個反射層，係可選自於一鋁、一銀及一金…等其中 之-材質加以製成。製作反射層時必須注意，若反射層為一g電 材質時’反射層不能與第三導電板52或第四導電板53接觸，亦 不能與第五導電板32或第六導電板33接觸，而狀射層最好能 與各個導電板保持一定的間隙，以避免各個導電板間產生短路的 現象。 爲了使發光二極體結構30之各發光二極體28間能更輕易的 13-28886 相互連接。或者爲了使發光二極體結構3Q與第二基材5〇，处人 的更為^整及完整，所有第五導電板32第六導魏33之表^ 度’係為相同水平之高度，如此將有利於製程上的施作。^ 第9圖係為本發明之發光二極體結構3〇進一步形成 體層37之剖視實施例圖。發光二極體結構％，進一歩包括j 3體ϋ7’其形成有至少—條導體並覆蓋於第二絕緣層31上， 第二絕緣層31的支撺，使得第二導體層37亦倉Ιί 仃稷雜的電路佈局設計。 J此琨 第1GG圖分別為各種高壓發光二極體28之電路 ,施=圖。本發明之發光三極體結構，因為有完整之第—絕緣層 至第此可以在各個、絕緣層上製作出第10A ^ ^ i日複雜電路，尤其是使用第二基材％而 形成復日日結構犄，相關電路之達成又更為容易。 訪杜1述各貫施例翻以說明本發明之特點，其目的在使熟習 1術者練解本發明之内容並據以實施，而非二直 脫離本發明所揭示之精神而完成“效修飾 夕文仍應包含在以下所述之申請專利範圍中。 【圖式簡單說明】 _為—第—基材與前製程發光"極體結構尚未結合之實 =圖1B圖係為—第—基材與輕程發光二極騎構結合後之實施 將第1B圖之臨·材及酬終止層去除狀立體實施 17 13.28886 ί】：為本發明之發光二極體結構’其完成單元分割後之剖視 ^ 3Β 進订第—次#刻之製作方法實施例圖。 縣第3A圖完錢再次進行第二次侧之製作方法實施 ^。圖為第2圖進纟元成第—絕緣層及導電板後之剖視實施例 第二基材之 第5A圖係為本發明之發光二極體結構進一 刳視實施例圖。 第5B圖係為第5八圖之俯視實施例圖。 第5C圖係為第5A圖之等效電路圖。 =6A圖係為本發明之發光二極體結構，其進一歩形成 體層之剖視實施例圖。 ^ 第6B圖係為第6A圖之俯視實施例圖。 第7圖係為本實施例之發光二極體結構，已完成單元、石曰 f分割及第二溝槽製作後之剖視實施例圖。 。站曰曰 第8圖係為本發明之發光二極體結構進一歩結合一 視實施例圖。 土何之 第9圖係為本發明之發光二極體結構進一步形成— 剖視實施姻。 -顿層之 第10Α圖至第i〇G圖分別為各種高壓發光二極體之電路實施例 【主要元件符號說明】 10 前製程發光二極體結構 11 時基材 蝕刻終止層 13.28886 發光二極體結構 第一基材 第一表面 第二表面 黏著層 第一歐姆連接層 第一歐姆連接層 裸露部 蠢晶詹 下彼覆層 作用層 上彼覆層 第一絕緣層 第一開孔 第二開孔 第一導電板 第二導電板 發光二極體 第一溝槽 第二歐姆連接層 第一導體層 發光二極體結構 第二絕緣層 第五導電板 第六導電板 延伸部 第二溝槽 19 13-28886 35 第三開孔 36 第四開孔 37 第二導體層 50 第二基材 51 第三表面 52 第三導電板 53 弟四導電板 60 焊點 口口 — 早70Ii28886 缘 缘 缘 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I The arrangement of the layers 31, in addition to completely igniting the illuminating 〒 of different units, does not affect each other, and also ensures that the illuminating diodes 28 are not affected by the external environment, such as moisture or moisture, thereby detracting from the life. The second insulating layer 31 is formed on the inner layer 243 and the inner side of the second trench 34, and the third opening % is formed, and the third opening and the fourth opening 36 are formed in the second insulating layer 31. After that, it is made by etching. The fifth conductive plates 32 are respectively formed in each of the third openings 35, and are connected to the corresponding coating layer 243. Further, between the upper cladding layer 243 and the fifth conductive plate, the two-ohm connecting layer 292. The sixth conductive plates 33 are respectively formed in each of the wf stones, and have one extending portion 331 extending downward, and the extending portion 331 is by J = and „ corresponds to the first ohmic connecting layer 23, . ^ Six conductive plates are set to provide power, so that the daylight layer 24 receives the power to generate light. The 3G is designed to be surface-to-surface. The adhesive layer 22 is formed on the second surface 212 of the first base (four) to form a reflective layer, and the radiation layer reflects the irregularities emitted by the insectized layer 24, so that the light emission can achieve a better light extraction efficiency. In addition, the adhesive layer 22 may be formed only as ίί ϊ 2/: the reflective layer is formed between the first substrate 21 and the adhesive layer 22, so that the side of the scatter can also be achieved, and the same is achieved at 30. Light-emitting efficiency. In the seven-nine-one body, the structure of Figure 8 is the light-emitting diode structure of the present invention 30-step-to-step knot-first section of the material 50 of the cross-sectional embodiment of the light-emitting diode structure 3(), including a substrate 50, which can produce a flip-chip structure. In the flip chip structure, the first layer is a transparent substrate and the adhesive layer 22 is a Ming adhesion layer 22. Second = Deng 15 /i - second surface 5 b third surface 51 axis has at least two: conductive eight = two fourth conductive plate 53, each - third conductive (four) and conductive = hunting The point 60 is electrically connected between the corresponding fifth conductive plate 32 and the sixth surface and the fourth conductive plate 53, except that the conductive plate has a plurality of junctions and the second layer 50 is formed to form a lightning distance m. The conductive plate 52 and the fourth conductive plate 53 are second; bMn ^ is a circuit structure which can be connected by the above-mentioned connection method. The use of the G advantage will make the string/parallel circuit between the different light-emitting diodes 28 lightly Since the area and thickness of the second substrate 5G can be sufficient to cope with a very complicated circuit structure, the application of the light-emitting diode structure 30 will be more diverse when the complicated circuit is used. The two-substrate 5G system can be a wire material, a printed circuit board/printed circuit, and a multi-layered crystal structure, in order to make the light-emitting diode 28 have better light-emitting effect, the first substrate can be used. On the third surface 51 of the fifth turn, the portion other than the third conductive plate 52 and the fourth electric plate 53 is formed into a reverse Or a reflective layer may be formed on the surface of the second insulating layer 31, that is, the exposed surface of the second insulating layer 31. Each of the above reflective layers may be selected from an aluminum, a silver, and a gold... And the material is made of it. When making the reflective layer, it must be noted that if the reflective layer is a g electrical material, the reflective layer cannot be in contact with the third conductive plate 52 or the fourth conductive plate 53, nor with the fifth conductive plate. 32 or the sixth conductive plate 33 is in contact, and the light-emitting layer preferably maintains a certain gap with each of the conductive plates to avoid a short circuit between the respective conductive plates. In order to make the light-emitting diodes of the light-emitting diode structure 30 28 can easily connect 13-28886. Or in order to make the light-emitting diode structure 3Q and the second substrate 5〇, the person is more complete and complete, and all of the fifth conductive plates 32 are in the same level as the sixth level. This will be beneficial to the application of the process. Fig. 9 is a cross-sectional view showing an embodiment in which the light-emitting diode structure 3 of the present invention is further formed into a bulk layer 37. The light-emitting diode structure %, further comprising a j 3 body ϋ 7' formed with at least a strip conductor and covering the second insulating layer 31, the support of the second insulating layer 31, so that the second conductor layer 37 is also Ι Ι Noisy circuit layout design. J this 琨 The first 1GG diagram is the circuit of various high-voltage light-emitting diodes 28, respectively. The light-emitting triode structure of the present invention can form a 10A ^ ^ day complex circuit on each of the insulating layers because of the complete first insulating layer, and in particular, the second substrate is used to form a complex day. The structure of the day is embarrassing, and the realization of related circuits is easier. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> The modified ceremonial text should still be included in the scope of the patent application described below. [Simple description of the schema] _ is - the first substrate and the pre-process luminescence " polar body structure has not been combined = Figure 1B is - - the implementation of the combination of the substrate and the light-traffic light-emitting diode structure, the removal of the material and the compensation layer of the first layer of Figure 1B. 13.28886 ί]: the light-emitting diode structure of the present invention After the cross-section ^ 3 Β ordering the first - time # 刻 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作. Section 5A of the second substrate of the present invention is a further embodiment of the light-emitting diode structure of the present invention. Fig. 5B is a plan view of the fifth embodiment. Figure 5C is an equivalent circuit diagram of Figure 5A. =6A is the light-emitting diode of the present invention. FIG. 6B is a plan view of a plan view of FIG. 6A. FIG. 7 is a light-emitting diode structure of the present embodiment, and the unit and stone have been completed. FIG. 8 is a cross-sectional view of the light-emitting diode structure of the present invention. FIG. The structure of the light-emitting diode of the present invention is further formed - the cross-sectional view is performed. The 10th to the 〇th G of the layer is a circuit embodiment of various high-voltage light-emitting diodes. [Main component symbol description] 10 Process light-emitting diode structure 11 substrate etching stop layer 13.28886 light-emitting diode structure first substrate first surface second surface adhesive layer first ohmic connection layer first ohmic connection layer bare part stupid crystal Zhanxia coating On the active layer, the first insulating layer, the first opening, the second opening, the first conductive plate, the second conductive plate, the light emitting diode, the first trench, the second ohmic connecting layer, the first conductive layer, the light emitting diode structure, the second Insulation layer fifth conductive plate sixth Conductive plate extension second groove 19 13-28886 35 third opening 36 fourth opening 37 second conductor layer 50 second substrate 51 third surface 52 third conductive plate 53 fourth conductive plate 60 solder joint Mouth - early 70
Al、A2、A3... A-A剖線 B-B剖線 20Al, A2, A3... A-A line B-B line 20