TWI323559B - Miniature lumped-type bandpass filters for organic ic package substrate - Google Patents
Miniature lumped-type bandpass filters for organic ic package substrate Download PDFInfo
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1323559 九、發明說明: 【發明所屬之技術領域】 本發明提供一種微型化集總式帶通濾波器(Miniature Lumped-Type Bandpass Filter),特別是針對埋入有機IC封裝 基板(0rganic Int呼ated Circuit Package Substrate)之集總式帶通 滤波。 【先前技術】 Φ 目前微型化集總式帶通濾波器主要採用低溫共燒陶瓷 (Low Temperature Cofired Ceramic,LTCC)基板。主因在於低溫 , 共燒陶兗基板具有多層咼介電係數之薄層介質,所以能產 生電容值涵蓋範圍大且Q值高的電容器,形成設計微型化集 總式帶通濾波器之關鍵有利因素。使用低溫共燒陶瓷基板 技術製造微型化集總式帶通濾波器,在設計架構上大多採 用PI型電容或電感耦合並聯諧振電路(請參閱第八A圖與第 八B圖)’而於第八A圖與第八B圖之電路架構下,在常見的無 線通訊頻段必須使用較大電容值之電容器,因此需要如低溫共燒 • 陶瓷基板製程提供多層高介電係數之薄層介質,方能完成帶通濾 波器之製造,詳細做法請參考以下文獻(S. Kobayashi and K. Saito,“A miniaturerized ceramic bandpass filter for cordless phone systems,5, in IEEE MTT-S Int. Microwave Symp. Dig., 1995, pp. 391-394. H.S. Song, and Y.S. Lee, “A miniaturized 2.4 GHz band multi-layer bandpass filter using capacitively loaded quarter-wavelength slow-wave resonator,55 1323559 in IEEE MTT-S Int. Microwave Symp. Dig.t 2003 pp 515-518.)。 5 使用低溫共燒陶瓷基板技術製造微型化集總式帶通渡 波益’雖然具有效能南且微形化效果佳等優點,但是在盘ic 整合成單封裝系統模組的應用上,低溫共燒陶瓷基板技術 具有兩項難以克服的缺點’其一為製造及開發成本仍然遠 大於有機基板技術’其二則由於製程上的限制而在線路密 度上無法滿足單封裝系統模組之高密度佈線要求。目前市 場上之主流1C封裝基板技術為有機基板,除製程技術成熟 度尚’成本低以外’其高密度的佈線能力也能滿足微型化 單封裝系統模組的設計需求。常見的有機1C封裝基板,如 壓合板(laminate )及增層(build-up)等基板。 目前有機基板在製程上要實現高介電係數之薄層介質 及多層金屬佈局仍然有很大的限制,因此若要埋入大電容 值的電容器,勢必佔據過大基板面積,不符合微形化的要 求。因此先前在有機基板内埋帶通濾波器的設計實例中, 请參考以下文獻(L. Li, P. Bowles, L.T. Hwang, and S. Plager,S·,“Embedded passives in organic substrate for bluetooth transceiver module,55 in Proc. 53rd Electron. Comp. Technol. Conf., 2003, pp. 464-469. L. Li, “Embedded passives in organic substrate for RF module and assembly characterization,” in /Voc. 2004, pp. 74-82.),均因 為電容器的因素而使得元件尺寸過大,導致元件效能不佳 並缺乏實用價值。 6 1323559 雖然目前已有研究單位開始發展内埋高介電係數薄層 介質於有機基板中,請參考以下文獻(I.R. Abothu,P.M. Raj, D. Balaraman, V. Govind, S. Bhattacharya, M.D. Sacks, M. Swaminathan, M.J. Lance, and R.R. Tummala, ‘‘Development of high-k embedded capacitors on printed wiring board using sol-gel and foil-transfer processes,55 in Proc. 54th Electron. Comp. Technol. Conf., 2004, pp. 514-520. D. Balaraman, P.M. Raj, R. Abothu, S.1323559 IX. Description of the Invention: [Technical Field] The present invention provides a Miniature Lumped-Type Bandpass Filter, in particular for embedding an organic IC package substrate (Organic Int Called Circuit) Package Substrate) ensemble bandpass filtering. [Prior Art] Φ At present, the miniaturized lumped bandpass filter mainly uses a Low Temperature Cofired Ceramic (LTCC) substrate. The main reason lies in the low temperature. The co-fired ceramic substrate has a multilayer dielectric with a multi-layer dielectric constant, so it can produce a capacitor with a large capacitance range and a high Q value, forming a key favorable factor for designing a miniaturized lumped bandpass filter. . Miniaturized lumped bandpass filters are fabricated using low temperature co-fired ceramic substrate technology. PI-type capacitors or inductively coupled parallel resonant circuits are mostly used in the design architecture (see Figures 8A and 8B). In the circuit architectures of Figure 8A and Figure 8B, capacitors with large capacitance values must be used in common wireless communication bands. Therefore, it is necessary to provide multiple layers of high dielectric constant thin layer media, such as low temperature co-firing • ceramic substrate process. The bandpass filter can be manufactured. For details, please refer to the following documents (S. Kobayashi and K. Saito, "A miniaturerized ceramic bandpass filter for cordless phone systems, 5, in IEEE MTT-S Int. Microwave Symp. Dig., 1995, pp. 391-394. HS Song, and YS Lee, "A miniaturized 2.4 GHz band multi-layer bandpass filter using capacitively loaded quarter-wavelength slow-wave resonator, 55 1323559 in IEEE MTT-S Int. Microwave Symp. Dig .t 2003 pp 515-518.). 5 The use of low-temperature co-fired ceramic substrate technology to manufacture miniaturized lumped band-passing Bo Yi's has the advantages of high efficiency and good micro-formation effect, but in the application of the ic integrated single-package system module, low-temperature co-firing Ceramic substrate technology has two insurmountable shortcomings. One is that manufacturing and development costs are still much larger than organic substrate technology. Second, due to process limitations, the line density cannot meet the high-density wiring requirements of single-package system modules. . At present, the mainstream 1C package substrate technology on the market is an organic substrate. In addition to the low process cost of the process technology, its high-density wiring capability can meet the design requirements of the miniaturized single package system module. Common organic 1C package substrates, such as laminates and build-up substrates. At present, the organic substrate has a large limitation on the thin dielectric and high-layer metal layout of the high dielectric constant in the process. Therefore, if a capacitor with a large capacitance value is buried, it will occupy an excessively large substrate area, which is not in conformity with the micro-formation. Claim. Therefore, in the design example of the buried bandpass filter in the organic substrate, please refer to the following documents (L. Li, P. Bowles, LT Hwang, and S. Plager, S·, "Embedded passives in organic substrate for bluetooth transceiver module , 55 in Proc. 53rd Electron. Comp. Technol. Conf., 2003, pp. 464-469. L. Li, “Embedded passives in organic substrate for RF module and assembly characterization,” in /Voc. 2004, pp. 74 -82.), due to the capacitor factor, the component size is too large, resulting in poor component performance and lack of practical value. 6 1323559 Although research units have begun to develop embedded high dielectric constant thin layer dielectric in organic substrates, Please refer to the following documents (IR Abothu, PM Raj, D. Balaraman, V. Govind, S. Bhattacharya, MD Sacks, M. Swaminathan, MJ Lance, and RR Tummala, ''Development of high-k embedded capacitors on printed wiring board Using sol-gel and foil-transfer processes, 55 in Proc. 54th Electron. Comp. Technol. Conf., 2004, pp. 514-520. D. Balaraman, PM Raj, R. Abothu, S.
Bhattacharya, M. Sacks, M. Lance, H. Meyer, M.Bhattacharya, M. Sacks, M. Lance, H. Meyer, M.
Swaminathan, and R. Tumrnala, “Exploring the limits of low cost, organics-compatible high-k ceramic thin films for embedded decoupling applications,5, in Proc. 55th Electron.Swaminathan, and R. Tumrnala, "Exploring the limits of low cost, organics-compatible high-k ceramic thin films for embedded decoupling applications, 5, in Proc. 55th Electron.
Comp. Tec/mo/. Cc?«/,2005, pp. 1215-1221.8.),可提供足夠 大電容值之電容器應用於電路設計,且目前已有商品化之 產品。但是,在有機基板内埋高介電係數材料製程仍受限 於開發成本及材料特性,至今仍然無法廣泛被運用在微型 化集總式帶通濾波器及單封裝系統模組的製造上。 【發明内容】 本發明之目的,在於提供一種採用τ型電感或電容耦合 串聯谐振電路架構所設計的微型化集總式帶通濾波器,使 得該微型化集總式帶通濾波器適於埋入有機1(:封裝基板。 依據本發明之特徵,所提供之—種埋入有機IC封裝基 板之微型化集總式帶通濾波器,包含:一第一電容,具有第 一平板與第二平板;一第二電容,具有第一平板與第二平 7 1323559 板,且該第一電容的第一平板電連接於該第二電容的第一 平板;一第一電感,串聯於該第一電容的第二平板;一第 二電感,串聯於該第二電容的第二平板;以及一第三電感, 電連接於該第二電容的第一平板與一接地端之間。其中該 微型化集總式帶通濾波器的佈局,利用該有機1C封裝基板 之導體側壁間所產生的電容耦合效應形成傳輸零點。 依據本發明之特徵,所提供之另一種埋入有機1C封裝 基板之微型化集總式帶通濾波器,包含:一第一電容,具 有第一平板與第二平板;一第二電容,具有第一平板與第 二平板,且該第一電容的第一平板電連接於該第二電容的 第一平板;一第三電容,電連接於該第二電容的第一平板 與一接地端之間;一第一電感,串聯於該第一電容的第二 平板;以及一第二電感,串聯於該第二電容的第二平板。 其中該微型化集總式帶通濾波器的佈局,利用該有機1C封 裝基板之導體側壁間所產生的電容耦合效應形成傳輸零 點。 本發明所提出的埋入有機IC封裝基板之微型化集總式 帶通濾波器,具有低成本、高效能、微形化效果佳以及容易 與1C整合成為單封裝系統模組等諸多優點,可大幅增加產 品的附加價值。 本發明之前述目的或特徵,將依據後附圖式加以詳細說 明,惟需明瞭的是,後附圖式及所舉之例,祇是做為說明 而非在限制或縮限本發明。 【實施方式】 8 1323559 雖然本發明將參閱含有本發明較佳實施例之所附圖 示予以充分描述,但在此描述之前應瞭解熟悉本行技藝之 人士可修改本文中所描述之創作,同時獲致本創作之功 效。因此,需瞭解以下之描述對熟悉本行技藝之人士而言 為一廣泛之揭示,且其内容不在於限制本創作。Comp. Tec/mo/. Cc?«/, 2005, pp. 1215-1221.8.), which provides a capacitor with a large enough capacitance value for circuit design, and is currently available in commercial products. However, the process of embedding high dielectric constant materials in organic substrates is still limited by development cost and material characteristics, and it has not been widely used in the manufacture of miniaturized lumped bandpass filters and single package system modules. SUMMARY OF THE INVENTION It is an object of the present invention to provide a miniaturized lumped bandpass filter designed using a τ-type inductor or a capacitively coupled series resonant circuit architecture, such that the miniaturized lumped bandpass filter is suitable for burying Incorporating an organic 1 (: a package substrate. According to a feature of the present invention, a miniaturized lumped band pass filter embedded in an organic IC package substrate includes: a first capacitor having a first plate and a second a second capacitor having a first plate and a second plate 7 1323559, and the first plate of the first capacitor is electrically connected to the first plate of the second capacitor; a first inductor is connected in series to the first plate a second plate of the capacitor; a second inductor connected in series to the second plate of the second capacitor; and a third inductor electrically connected between the first plate of the second capacitor and a ground. The layout of the lumped bandpass filter forms a transmission zero using the capacitive coupling effect generated between the conductor sidewalls of the organic 1C package substrate. According to a feature of the present invention, another buried organic 1C package is provided. The miniaturized lumped bandpass filter of the substrate comprises: a first capacitor having a first plate and a second plate; a second capacitor having a first plate and a second plate, and the first of the first capacitor The first circuit is electrically connected to the first plate of the second capacitor; the third capacitor is electrically connected between the first plate of the second capacitor and a ground; a first inductor is connected in series to the second of the first capacitor And a second inductor connected in series to the second plate of the second capacitor. The layout of the miniaturized lumped bandpass filter is formed by a capacitive coupling effect generated between sidewalls of the conductor of the organic 1C package substrate The transmission of the zero point. The miniaturized lumped bandpass filter embedded in the organic IC package substrate has the advantages of low cost, high efficiency, good micro-formation effect, and easy integration with 1C into a single package system module, and the like. Advantages, the added value of the product can be greatly increased. The foregoing objects or features of the present invention will be described in detail based on the following figures, but it should be understood that the following figures and examples are merely The present invention is not limited or limited. [Embodiment] 8 1323559 Although the present invention will be fully described with reference to the accompanying drawings in which the preferred embodiments of the invention are described, A person may modify the creations described herein and at the same time obtain the effect of the creation of the creations. Therefore, it is to be understood that the following description is a broad disclosure of those skilled in the art and is not intended to limit the invention.
有鑒於先前技術之缺點,本發明採用如第一圖顯示之τ 型電感耦合串聯諧振電路架構設計微型化集總式帶通濾波 器,取代PI型電容或電感耦合並聯諧振電路架構。包含第 一埠110、第二埠120、第一串聯諧振電路130、第二串聯 諧振電路140、接地電感Li/Ui150及接地端160。其中第一 串聯諧振電路130由一第一串聯電感與一第一串聯電容 電串聯所組成,第二串聯諧振電路140係由一第二串聯 電感與一第二串聯電容電串聯所組成,而第一串聯 諧振電路130與第二串聯諧振電路140經由第一串聯電容 及第二串聯電容彼此電串聯,最後第一串聯諧振電 路130與第二串聯諧振電路140電串聯處再經由接地電感 LiW150與接地端160電連接。其中串聯諧振電路之諧振角 頻率為 採取此T型電感耦合串聯諧振電路架構時,電感器需提供 較大的電感值及Q值,而電容器只需提供較小的電容值, 這些集總元件特徵有助於實現内埋此帶通濾波器於低成本 的有機1C封裝基板中。 9 1323559 由先前針對埋入有機ic封裝基板之螺旋電感器的研究 中發現,請參考以下文獻(M.F. Davis, A. Sutono,K.Lim,J. Laskar, V. Sundaram, J. Hobbs, G.E. White, and R. Tummala, “RF-microwave multi-layer integrated passives using fully organic System on Package (SOP) technology,in IEEE MTT-S Int. Microwave Symp. Dig., 2001, pp. 1731-1734. S.H. Lee, S. Min, D. Kim, S. Dalmia, W. Kim, V. Sundaram, S. Bhattacharya, G. White, F. Ayazi, J.S. Kenney, M.In view of the shortcomings of the prior art, the present invention uses a τ-type inductively coupled series resonant circuit architecture as shown in the first figure to design a miniaturized lumped bandpass filter instead of a PI-type capacitor or an inductively coupled parallel resonant circuit architecture. The first 埠 110, the second 埠 120, the first series resonant circuit 130, the second series resonant circuit 140, the grounding inductance Li/Ui 150, and the ground terminal 160 are included. The first series resonant circuit 130 is composed of a first series inductor and a first series capacitor electrically connected in series, and the second series resonant circuit 140 is composed of a second series inductor and a second series capacitor electrically connected. A series resonant circuit 130 and a second series resonant circuit 140 are electrically connected to each other via a first series capacitor and a second series capacitor. Finally, the first series resonant circuit 130 and the second series resonant circuit 140 are electrically connected in series via a grounding inductor LiW150 and ground. Terminal 160 is electrically connected. Wherein the resonant angular frequency of the series resonant circuit is such that when the T-type inductively coupled series resonant circuit architecture is adopted, the inductor needs to provide a large inductance value and a Q value, and the capacitor only needs to provide a small capacitance value, and these lumped component characteristics This helps to embed this bandpass filter in a low cost organic 1C package substrate. 9 1323559 Found from previous studies on spiral inductors embedded in organic ic package substrates, please refer to the following documents (MF Davis, A. Sutono, K. Lim, J. Laskar, V. Sundaram, J. Hobbs, GE White , and R. Tummala, "RF-microwave multi-layer integrated passives using fully organic System on Package (SOP) technology, in IEEE MTT-S Int. Microwave Symp. Dig., 2001, pp. 1731-1734. SH Lee, S. Min, D. Kim, S. Dalmia, W. Kim, V. Sundaram, S. Bhattacharya, G. White, F. Ayazi, JS Kenney, M.
Swaminathan, and R.R. Tummala, “High performance spiral inductors embedded on organic substrates for SOP applications,in IEEE MTT-S lnt. Microwave Symp. Dig., 2002, PP· 2229-2232.) ’可於很小的面積内實現高電感值之 多圈螺旋電感器,在常用的無線通訊頻率範圍内,電感值 可以達到20 nH且Q值可大於3〇,已具備實現一高效能丁型架 構之微型化集總式帶通濾波器的條件。 本發明亦採用如第二圖顯示之T型電容耦合串聯諧振 電路架構設計微型化集總式帶通濾波器,取代ρι型電容或 電感耦合並聯諧振電路架構,與第一圖之差別在於以接地 電容取代接地電感,故在此不再贅述。 隹清=閱第三圖’係顯示本發明埋入有機IC封裝基板之微型化 :、、心式I通濾波益之第一實施例佈局圖,其中有機封裝基板係 采用四層氮樹脂壓合板(Bismaleimide Triazine Laminate)之 係按照第—圖所示之電路架構所完成。其中該第土一串 :電感430係形成於該有機1C封裝基板之第二層上,且玆 -串聯電感430之-端經由第一金屬連通柱481電連^ 第一槔4l〇 ’该第一串聯雷 I基板之第1與第二芦上之形成於該有機IC封 容460之第二層平板’、其中該第—串聯電 聯,該第;串聯電容47:包含7感430之另-端電串 第一層與第二層上之二伞^ ί成於該有機IC封裴基板之 气览4^π 板,八中該第二串聯電容470與 ,亥弟一串枷兒令460之第—層平 感440係形成於該有機1(:封壯其免串恥,5亥第一串聯電 -串們電咸_之封裝基板之第二層上,其中該第 容470之第二層平板電奉^,、之^另柒與泫第二串聯電 於該有機ic封裝基板之第及1接地電感45G係形成 ίίΓΐίΐί屬連通柱485電連接該第二串夂容_ 之第一端經由第四金屬連/柱f87千=且該接地電感450 /0增魅 町我I扳之弟四層上。本佈局的特 徵在於使付^側壁間產生微小電容輕合效應,並利用該 電容搞合效應形成可控制之傳輸零點,用以加強本發明所 設計之料㈣帶衰減能力錢賴外之證 振f或傳輸線等元件,可減少帶通濾波騎使㈣元件數目, 以貫現微型化,進一步降低成本。 繼續參考第三圖’其中該第一串聯電感43〇、第二串 聯包感440及接地電感450之形狀係為矩形螺旋,且本發 明將該集總式帶通濾波器操作於2.5〜2.9 GHz之無線都會 區域網路(Worldwide Interoperability f〇r Microwave Access, WiMax)應用頻段。經由推導,可知帶通濾波器在諧振角 1323559 頻率4及吒位置具有反射零點,且在q與%間可代表平坦的 通帶範圍,考慮實際有機ic封裝基板製程的誤差情況下, 將可能造成中心頻率飄移的現象,故將帶通濾波器的諧振Swaminathan, and RR Tummala, “High performance spiral inductors embedded on organic substrates for SOP applications, in IEEE MTT-S lnt. Microwave Symp. Dig., 2002, PP· 2229-2232.) 'Can be implemented in a small area Multi-turn spiral inductor with high inductance value, in the range of commonly used wireless communication frequency, the inductance value can reach 20 nH and the Q value can be greater than 3〇. It has a miniaturized lumped bandpass that realizes a high-performance D-type architecture. The condition of the filter. The present invention also adopts a T-type capacitive coupled series resonant circuit architecture as shown in the second figure to design a miniaturized lumped bandpass filter instead of a ρι-type capacitor or an inductively coupled parallel resonant circuit architecture, and the first figure. The difference is that the grounding capacitor is used to replace the grounding inductance, so it will not be described here. 隹清=阅图图' shows the miniaturization of the embedded IC package substrate of the present invention: The layout of the embodiment, wherein the organic package substrate is made of a four-layer nitrogen resin laminate (Bismaleimide Triazine Laminate) according to the circuit structure shown in the figure. a first string: an inductor 430 is formed on the second layer of the organic 1C package substrate, and the end of the z-series inductor 430 is electrically connected via the first metal via 481. The second layer of the first and second reeds of the Ray I substrate is formed on the second layer of the organic IC package 460, wherein the first series is connected, the first; the series capacitor 47: the other end of the 7 sense 430 The second layer on the first layer and the second layer of the electric string is formed on the gas plate 4^π plate of the organic IC sealing substrate, the second series capacitor 470 in the middle of the eight, and the 460 The first layer of flatness 440 is formed on the second layer of the organic substrate 1 (the seal of the first layer of the first series of the first series of electricity) The first layer of the second series of capacitors is electrically connected to the first and second grounding inductors 45G of the organic ic package substrate. Via the fourth metal connection / column f87 thousand = and the grounding inductance 450 / 0 Zengzu-cho I I am the fourth brother on the four layers. This layout is characterized by the generation of tiny capacitance between the sidewalls Combining the effect, and using the capacitor to achieve a controllable transmission zero point, to strengthen the material designed by the invention (4) with attenuation capability, such as the vibration f or transmission line and other components, can reduce the band pass filter ride (4) The number of components is miniaturized to further reduce the cost. With continued reference to the third figure, the shape of the first series inductor 43 〇, the second series sense 440 and the ground inductor 450 is a rectangular spiral, and the present invention The lumped bandpass filter operates in the 2.5 to 2.9 GHz Worldwide Interoperability f〇r Microwave Access (WiMax) application band. Through derivation, it can be seen that the band-pass filter has a reflection zero at the frequency 4 and the 吒 position of the resonance angle 1323559, and can represent a flat passband range between q and %. Considering the error of the actual organic ic package substrate process, it may cause The phenomenon that the center frequency drifts, so the resonance of the bandpass filter
角頻率4和吟分別設定於2zx2.05G rad/s及2nx3.35G rad/s,比系統所要求之400MHz頻寬大約三倍。通帶滾落 速率(roll-off rate)則由邊緣波形因數(skirt shape factor)心 決定,\為介於0與1之參數,越趨近於1則代表滚落速 率越快,系統阻抗z。為50ω。由上述帶通濾波器的特性參 數,可以利用下列公式計算出第一圖Τ型電感耦合串聯諧 振電路架構所需之元件值:The angular frequencies 4 and 吟 are set at 2zx2.05G rad/s and 2nx3.35G rad/s, respectively, which is approximately three times the 400MHz bandwidth required by the system. The roll-off rate is determined by the edge shape factor, \ is a parameter between 0 and 1. The closer to 1, the faster the roll-off rate, the system impedance z . It is 50ω. From the characteristic parameters of the above-mentioned band-pass filter, the component values required for the first diagram-type inductively coupled series resonant circuit architecture can be calculated by the following formula:
y ω}ω2y ω}ω2
(2)(2)
2Cse^^2 (3) (4) 其中,叫為串聯諧振電路之諧振角頻率,可以下式另外表示為2Cse^^2 (3) (4) where, the resonant angular frequency of the series resonant circuit can be expressed as
^C〇jC〇2 S¥ (5) 且由上述帶通濾波器的特性參數,可以利用下列公式 計算出第二圖T型電容耦合串聯諧振電路架構所需之元件 值:^C〇jC〇2 S¥ (5) and by the characteristic parameters of the above-mentioned band-pass filter, the following formula can be used to calculate the component values required for the T-type capacitive coupling series resonant circuit architecture of the second figure:
/ Z〇 Si+S¥2 1 -λ 1 ω}ωΊ "\ y ωχω2 ως ω\/ Z〇 Si+S¥2 1 -λ 1 ω}ωΊ "\ y ωχω2 ως ω\
⑹⑺ 12 1323559(6)(7) 12 1323559
2 ⑻ 其中,吟為串聯諧振電路之諧振角頻率,可以下式另表示為 ωΓ=8¥^ω2 (9)2 (8) where 吟 is the resonant angular frequency of the series resonant circuit, which can be expressed as ωΓ=8¥^ω2 (9)
另外,本發明之第二實施例佈局圖係將第一實施例佈 局圖中的接地電感450以接地電容取代,意即以第二圖Τ 型電容耦合串聯諧振電路架構設計微型化集總式帶通濾波 器。其中該接地電容包含形成於該有機1C封裝基板之第一 層與第二層上之二平板,而該接地電容之第一層平板與第 二串聯電容470及該第一串聯電容460之第一層平板電連 接,而該接地電容之第二層平板經由第四金屬連通柱487 電連接於接地端。由於第二實施例佈局圖與第一實施例佈 局圖只差別在以接地電容取代接地電感450,故在此不再 贅述。In addition, the layout of the second embodiment of the present invention replaces the grounding inductance 450 in the layout diagram of the first embodiment with a grounding capacitor, that is, designing a miniaturized lumped strip with a second-picture 电容-type capacitive coupling series resonant circuit architecture. Pass filter. The grounding capacitor includes two plates formed on the first layer and the second layer of the organic 1C package substrate, and the first layer of the grounding capacitor and the second series capacitor 470 and the first series capacitor 460 are first The layer plate is electrically connected, and the second layer of the grounding capacitor is electrically connected to the ground via the fourth metal communication post 487. Since the layout diagram of the second embodiment differs from the layout diagram of the first embodiment only in that the grounding inductance 450 is replaced by the grounding capacitance, it will not be described herein.
請參閱第四圖,係評估採用第一圖之電路架構設計微 型化集總式帶通濾波器的與等電路元件值與 心之關係圖,其中該集總式帶通濾波器操作於2.5〜2.9 GHz 之無線都會區域網路應用頻段。由圖中可以發現,當&落 在0.7〜0.78區間時,所需要的電容量範圍均小於1 pF,而 且所需要的電感值範圍不大於20 nH,相當適合埋入有機 1C封裝基板中。另外,為使插入損耗小於2 dB,並提供1 GHz以下頻率範圍有30 dB以上之衰減量,故選擇心約等 於0.748~0.755之間’其所需之Lw、Cw與分別約為 6 nH、0.35 pF 及 6 nH。 13 1323559 請參閱第五A圖,係顯示基於第四圖之佈局結構並採 用四層氮樹脂壓合板基板加以製作之帶通濾波器成品。該 帶通滤波器成品所佔面積僅有3 mm X 2.5 mm,且經由檢視 該成品縱切面,如第五B圖所示,顯示各金屬層與介質層 厚度頗為均勻,且總厚度亦相當微薄,約只有0.45 mm, 故可達到微型化之效果。Please refer to the fourth figure, which is to evaluate the relationship between the value of the circuit component and the heart of the miniaturized lumped bandpass filter using the circuit architecture of the first figure, wherein the lumped bandpass filter operates at 2.5~ 2.9 GHz wireless metro area network application band. It can be seen from the figure that when & falls within the range of 0.7 to 0.78, the required capacitance range is less than 1 pF, and the required inductance value is not more than 20 nH, which is quite suitable for embedding in the organic 1C package substrate. In addition, in order to make the insertion loss less than 2 dB and provide an attenuation of more than 30 dB in the frequency range below 1 GHz, the choice of the heart is approximately equal to 0.748 to 0.755. The required Lw, Cw and approximately 6 nH, respectively. 0.35 pF and 6 nH. 13 1323559 Please refer to Figure 5A for the finished version of the bandpass filter based on the layout of the fourth figure and using a four-layer nitrogen resin plywood substrate. The finished area of the bandpass filter is only 3 mm X 2.5 mm, and the longitudinal section of the finished product is examined. As shown in the fifth panel B, the thickness of each metal layer and the dielectric layer is relatively uniform, and the total thickness is also equivalent. It is meager, only about 0.45 mm, so it can achieve miniaturization.
請參閱第六圖,係顯示第三圖之實際等效電路圖。包含第 一埠610、第二埠620、第一串聯電感之等效電路630、第 二串聯電感之等效電路650、第一串聯電容與第二串聯電容 電串聯之等效電路640及接地電感之等效電路660。因為集 總元件間的相互耦合效應,使得帶通濾波器實際等效電路 比原始設計電路(第一圖)更加複雜。於實際等效電路可發 現,由兩片電容器之金屬板側壁所形成之耦合電容c„,641產 生一傳輸零點叫,該傳輸零點可以下式計算: (10) 1 I c„, ylLsedCsedicsed+2CmPlease refer to the sixth figure, which shows the actual equivalent circuit diagram of the third figure. The first circuit 610, the second circuit 620, the first series inductance equivalent circuit 630, the second series inductance equivalent circuit 650, the first series capacitor and the second series capacitor electric series equivalent circuit 640 and the grounding inductance Equivalent circuit 660. The actual equivalent circuit of the bandpass filter is more complicated than the original design circuit (first figure) because of the mutual coupling effect between the lumped elements. In the actual equivalent circuit, it can be found that the coupling capacitance c„, 641 formed by the side walls of the metal plates of the two capacitors generates a transmission zero point, which can be calculated by the following formula: (10) 1 I c„, ylLsedCsedicsed+2Cm
因此,控制此耦合電容的大小即可用來選擇傳輸零點之頻 率位置。以此帶通濾波器為例,有機1C封裝基板之銅導體 厚度約10〜20 um,經由量測與推導可得知耦合電容c„,641 約為0.025pF,使得傳輸零點預測落在1GHz附近。 請參閱第七A圖與第七B圖,係分別顯示本發明帶 通濾波器之反射係數(Reflection Coefficient)與插入係數 (Insertion Coefficient)等重要性能參數。由圖中發現經 過等效電路及電磁模擬軟體(H F S S)計算所得之結果與經 過向量網路分析儀測量之結果頗為相符,其中該帶通濾波 14 1323559 器係埋入四層氮樹脂壓合板基板。通帶範圍符合原先預期 落於2.05~3.35 GHz之間,在所重視的WiMax頻段2.5~2.9 GHz之間其插入係數大於-1.2 dB,反射係數小於-15 dB。 另外,在第七B圖中可發現於1 GHz附近,具有一利用耦 合電容所產生之傳輸零點,使得在小於1.2 GHz頻率範圍 内具有大於40dB以上之衰減能力,結果顯示本發明濾波 器性能相當優異。 在詳細說明本發明的較佳實施例之後,熟悉該項技術 人士可清楚的暸解,在不脫離下述申請專利範圍與精神下 進行各種變化與改變,且本發明亦不受限於說明書中所舉 實施例的實施方式。Therefore, controlling the size of this coupling capacitor can be used to select the frequency position at which the zero point is transmitted. Taking the band pass filter as an example, the thickness of the copper conductor of the organic 1C package substrate is about 10~20 um. Through measurement and derivation, the coupling capacitance c„, 641 is about 0.025pF, so that the transmission zero point is predicted to fall near 1GHz. Please refer to the seventh A diagram and the seventh B diagram, which respectively show important performance parameters such as reflection coefficient and insertion coefficient of the band pass filter of the present invention. The calculated results of the electromagnetic simulation software (HFSS) are in good agreement with the results measured by the vector network analyzer. The bandpass filter 14 1323559 is embedded in a four-layer nitrogen resin plywood substrate. The passband range is in line with the original expectations. Between 2.05 and 3.35 GHz, the insertion coefficient is greater than -1.2 dB and the reflection coefficient is less than -15 dB between 2.5 and 2.9 GHz in the WiMax band of importance. In addition, in Figure 7B, it can be found near 1 GHz. There is a transmission zero generated by the coupling capacitor, so that the attenuation capability is greater than 40 dB in the frequency range of less than 1.2 GHz, and the results show that the filter of the present invention is quite excellent in performance. Various changes and modifications can be made without departing from the scope and spirit of the invention, and the invention is not limited by the description. Embodiments of the embodiments.
15 1323559 【圖式簡單說明】 第一圖為本發明製造微型化集總式帶通濾波器所採用的τ 型電感耦合串聯諧振電路架構。 第二圖為本發明製造微型化集總式帶通濾波器所採用的τ 型電容耦合串聯諧振電路架構。 第三圖為本發明埋入有機1C封裝基板之微型化集總式帶 通濾波器之第一實施例佈局圖。 第四圖為評估採用第一圖之電路架構設計微型化集總式帶 通濾、波的/與/等電路元件值與5^之關 係圖。 第五A圖為本發明帶通濾波器成品。 第五B圖為本發明帶通濾波器成品之縱切面。 第六圖為顯示第三圖之實際等效電路圖。 第七A圖為顯示本發明帶通濾波器之反射係數。 第七B圖為顯示本發明帶通濾波器之插入係數。 第八A圖為習知製造微型化集總式帶通濾波器所採用的PI 型電容耦合並聯諧振電路架構。 第八B圖為習知製造微型化集總式帶通濾波器所採用的PI 型電感耦合並聯諧振電路架構。 【主要元件符號說明】 110…第一埠 120---第二埠 130—弟一串聯言皆振電路 140—弟二串聯諸振電路 16 1323559 150…接地電感 160—接地端 410…第一埠 420…第二埠 430---第一串聯電感 440—-第二串聯電感 450—接地電感 460…第一串聯電容 470---第二串聯電容 481-—第一金屬連通柱 483---第二金屬連通柱 485---第三金屬連通柱 487---第四金屬連通柱 610…第一埠 620---第二埠 630---第一串聯電感之等效電路 640- --第一串聯電容與第二串聯電容電串聯之等效 電路 641- --由兩片電容器之金屬板側壁所形成之耦合電 容 650---第二串聯電感之等效電路 660…接地電感之等效電路 1715 1323559 [Simple description of the diagram] The first figure is the τ-type inductively coupled series resonant circuit architecture used in the manufacture of the miniaturized lumped bandpass filter of the present invention. The second figure is a τ-type capacitive coupled series resonant circuit architecture used in the manufacture of the miniaturized lumped bandpass filter of the present invention. The third figure is a layout view of a first embodiment of a miniaturized lumped bandpass filter embedding an organic 1C package substrate according to the present invention. The fourth figure is a diagram to evaluate the relationship between the circuit component values of the miniaturized bandpass filter, the wave/and/etc, and the circuit element using the circuit architecture of the first figure. The fifth A is a finished product of the band pass filter of the present invention. The fifth B is a longitudinal section of the finished product of the band pass filter of the present invention. The sixth figure shows the actual equivalent circuit diagram of the third figure. Figure 7A is a graph showing the reflection coefficient of the bandpass filter of the present invention. Figure 7B is a diagram showing the interpolation coefficients of the band pass filter of the present invention. Figure 8A shows the PI-type capacitive coupling parallel resonant circuit architecture used in the conventional fabrication of miniaturized lumped bandpass filters. Figure 8B shows the PI-type inductively coupled parallel resonant circuit architecture used in the conventional fabrication of miniaturized lumped bandpass filters. [Main component symbol description] 110...first 埠120---second 埠130-di-one series-connected vibration circuit 140-di-second series vibration circuit 16 1323559 150...grounding inductance 160-grounding terminal 410...first 埠420...second 埠430---first series inductance 440--second series inductance 450-grounding inductance 460...first series capacitor 470---second series capacitor 481--first metal connecting column 483--- The second metal connecting column 485---the third metal connecting column 487---the fourth metal connecting column 610...the first 埠620---the second 埠630---the equivalent circuit of the first series inductor 640-- - an equivalent circuit 641 - electrically connected in series with the second series capacitor and the second series capacitor - a coupling capacitor 650 formed by the side walls of the metal plates of the two capacitors - an equivalent circuit 660 of the second series inductance ... grounding inductance Equivalent circuit 17
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