1323243 九、發明說明： 【發明所屬之技術領域】 本發明涉及-齡米㈣’制涉及K奈米管陣列處理方法。 【先前技術】1323243 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for processing a K-nanotube array in the case of an age-old rice (four). [Prior Art]
碳奈米管係一種由碳原子組成之直徑為納米量級之管狀物，係 1991年由日本科學家Iijima[Nature 354, 56 (聰）]於電弧放電産 物中首次發現。碳奈米管之特殊結構蚊了其具有高抗張強度和高度 熱穩定性。隨著碳奈米管長度、直徑和螺旋方式之變化，碳奈米管可 呈現出金屬性或半金屬性。碳奈米管陣列之選擇性定位和構築具有特 別重要之基礎和應用研究價值’尤其係場發射平板顯示器、真空微電 V 子源以及新型功此納米器件等應用領域。所有這些應用都需要一種特 殊處理方法，使碳奈米管陣列具有均一之構型或周期性之排列。 就碳奈米管於場發射應用之性能而言，現有技術中，由於製備之 碳奈米管，列中各個碳奈米管之間電場屏蔽效應比較大，所以其場發 射本領與單根碳奈米管相差很大。因此通常會引入各種後處理，比如 t射處、.等離子體處理、化學處理等等，以減小電場屏蔽效應，降 低場發射電壓，改善場發射性能。The carbon nanotube is a tubular material consisting of carbon atoms and having a diameter of the order of nanometers. It was first discovered in 1991 by Japanese scientist Iijima [Nature 354, 56 (Cong)] in arc discharge products. The special structure of carbon nanotubes has high tensile strength and high thermal stability. The carbon nanotubes may exhibit metallic or semi-metallic properties as the carbon nanotubes vary in length, diameter, and helix. The selective positioning and construction of carbon nanotube arrays has a particularly important foundation and application research value, especially in field applications such as field emission flat panel displays, vacuum micro-electric V sub-sources, and novel nano-devices. All of these applications require a special treatment that allows the carbon nanotube array to have a uniform configuration or a periodic arrangement. In terms of the performance of carbon nanotubes in field emission applications, in the prior art, due to the prepared carbon nanotubes, the electric field shielding effect between the individual carbon nanotubes in the column is relatively large, so the field emission ability and the single carbon The nanotubes vary greatly. Therefore, various post-processing, such as t-shooting, plasma treatment, chemical treatment, etc., are usually introduced to reduce the electric field shielding effect, reduce the field emission voltage, and improve the field emission performance.
Zhao WJ’ Kawakami N，Sawada A 等人於 Field Emission fromZhao WJ’ Kawakami N, Sawada A, etc. at Field Emission from
Screen-printed Carbon Nanotubes Irradiated by Tunable φ Ultraviolet Laser in Different Atmospheres (Journal of VacuumScreen-printed Carbon Nanotubes Irradiated by Tunable φ Ultraviolet Laser in Different Atmospheres (Journal of Vacuum
Science & Technology B 21 (4): 1734-1737 Jul-Aug 2003)中介紹 了一種用紫外雷射處理印刷碳奈米管發射體之方法。該方法以常用之 有機膠將夕壁石反奈米管（Muitiwalled Carbon Nanotubes)通過絲網印 刷（Screen Print)於銦錫氧化物（Indium_Tin_〇xide，IT〇)或玻璃基板 上，通過調卽紫外雷射波長、照射時間'能量密度以芩於空氣中或真 空中對所述印刷於基板上之碳奈米管陣列進行處理。通過該方法處理 獲得之碳奈米管發射體之起始電壓從3. 2v/_降到了 i 2V/[Jm，場發射 性能得到明顯改善。 7 1323243A method of printing a carbon nanotube emitter by ultraviolet laser treatment is described in Science & Technology B 21 (4): 1734-1737 Jul-Aug 2003). The method uses a common organic glue to screen the Mutiwalled Carbon Nanotubes by screen printing on an indium tin oxide (Indium_Tin_〇xide, IT〇) or a glass substrate. The ultraviolet laser wavelength, the irradiation time 'energy density', the carbon nanotube array printed on the substrate is treated in air or in a vacuum. The initial voltage of the carbon nanotube emitter obtained by this method was reduced from 3.2 v/_ to i 2 V/[Jm, and the field emission performance was significantly improved. 7 1323243
Kanazawa Y，Oyama T, Murakami K 等人於 improvement in Electron Emission from Carbon Nanotube Cathodes after Ar Plasma Treatment (Journal of Vacuum Science & Technology B 22 (3)· 1342-1344 May-Jun 2004)介紹了 一種用氬等離子體處理碳奈米管發 射體表面之方法。該方法以常用之有機膠將多層碳奈米管 (Multiwalled Carbon Nanotubes)通過絲網印刷（Screen Print)於銦 錫氧化物玻璃（Indium-Tin-Oxide Glass)基板上；將所述碳奈米管暴 露於放電電壓250伏(Volt)，射頻功率60瓦（Watt) ’壓力40帕（Pa.) 之氬等離子區，照射時間3 ^ 5分鐘不等。處理後魏體之起始電壓 k 3. 3V/pm降到了 1. 7V/pm，場發射性能也得到明顯改善。 惟，上述兩種碳奈米管陣列之處理方法所需設備較為複雜和昂 貴，且操作使用較為複雜，使得成本增加。 〇d綜上，提供一種能夠降低碳奈米管之間屏蔽效應且形成過程簡 單、成本較低之碳奈米管陣列處理方法實為必要。 【發明内容】 為克月民現有技術中碳奈米管陣列處理方法中圖形陣列形成過程複 雜及製賊本高之技術缺點，本發明提供__觀_低碳奈米管 屏蔽效應且形成過程鮮、成本較低之碳奈米料列處理方法。 、為實現上述目的’本發明提供—種碳奈米管_處理方法包括 ^步驟：於基底上形成—碳奈米管陣列；通過預定職之模麼裝置 陣^ 米管陣舰印；取下模難置，形油卿狀之碳奈米管 與現有技術舢，本發明所提供之碳奈綺陣翁•法有 成本較 所述碳奈米管陣列通過機械方法壓印而成，工藝 低、有利於大批量生產。 … 【實施方式】 方法包 :面將結合關及具體實施細丨本發明進行詳細說明。 括以第—圖至細圖，本發明提供之碳奈米管陣列處理Kanazawa Y, Oyama T, Murakami K et al. introduced an argon in the Improvement of Electron Emission from Carbon Nanotube Cathodes after Ar Plasma Treatment (Journal of Vacuum Science & Technology B 22 (3) 1342-1344 May-Jun 2004) A method of plasma treating a surface of a carbon nanotube emitter. The method uses a common organic glue to screen the Multiwalled Carbon Nanotubes on a substrate of Indium-Tin-Oxide Glass by using a screen printed on the Indium-Tin-Oxide Glass substrate; Exposure to a discharge voltage of 250 volts (Volt), RF power of 60 watts (Watt) 'pressure 40 Pa (Pa.) argon plasma zone, irradiation time of 3 ^ 5 minutes. After the treatment, the initial voltage of the Wei body k 3. 3V/pm dropped to 1. 7V/pm, and the field emission performance was also significantly improved. However, the equipment required for the treatment of the above two carbon nanotube arrays is complicated and expensive, and the operation and use are complicated, resulting in an increase in cost. In summary, it is necessary to provide a carbon nanotube array processing method which can reduce the shielding effect between carbon nanotubes and has a simple formation process and low cost. SUMMARY OF THE INVENTION The present invention provides a shielding effect and a formation process of a low carbon nanotube tube, which is a technical defect in the formation process of the pattern array in the carbon nanotube array processing method of the prior art. Fresh and low cost carbon nanomaterial processing method. In order to achieve the above object, the present invention provides a carbon nanotube tube. The method includes the steps of: forming an array of carbon nanotubes on a substrate; and disposing the device through a predetermined mode; The hard-to-set, oil-like carbon nanotube tube and the prior art 舢, the carbon nanotubes provided by the present invention have a lower cost than the carbon nanotube array by mechanical method, and the process is low. Conducive to mass production. [Embodiment] The method package will be described in detail with reference to the details of the present invention. Included from the drawings to the detailed drawings, the carbon nanotube array treatment provided by the present invention