1321550 九、發明說明： 【發明所屬之技術領域】 本發明係關於微機電系統(micr0_electrc)medianieal system5 MEMS)裝置’尤其關於利帛當前技藝水平之半導體製造流 程，製造自行組裝之MEMS的裝置，以便利其製造。 【先前技術】 採用微機電系統(MEMS)技術的產品已廣泛出現在生 醫、航太、車輛’以及通訊等領域。傳統的MEMS技術即使 用於最簡單的機器上’都需要複雜的多層級(multilevd)處理步 驟。大多數有興趣開發MEMS市場之機構在製作装置原型上 之可選擇性有限，且僅具少許或缺乏專業技術。通常’所需的 製程和材料都與現行製作流程不能相容。 傳統的MEMS基本上會用到懸臂開關（cantilever switch)、膜片開關(membrane switch)，以及可調電容結構。 MEMS裝置是以微機電技術製造而成，並用來控制電子、機 械或光學訊號流。不過，這類裝置的結構和原有的材料特性會 產生5午多問題’因此不能和傳統的半導體製程放在一起製造， 通常是因為不同的材料和製程不相容的緣故，因此，也不能整 合在傳統的半導體製造流程中。 4IBM/04157TW ; FIS9-2003-0250(JHW) 1321550 本發明之又另一個目的係從一個基板傳送組裝或次總成 製另一基板，以建構過去無法製作的更複雜的系統。 而本發明尚有另一目的係使用改良的大馬士革製程 (damascene process)來製造 MEMS 結構。1321550 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a microelectromechanical system (micr0_electrc) medianieal system 5 MEMS device, in particular to a semiconductor manufacturing process of the current state of the art, for manufacturing a self-assembled MEMS device, Convenient for its manufacture. [Prior Art] Products using microelectromechanical systems (MEMS) technology have been widely used in the fields of biomedical, aerospace, vehicles, and communications. Traditional MEMS technology requires complex multi-leval processing steps even on the simplest machines. Most organizations interested in developing the MEMS market have limited options for making device prototypes with little or no expertise. Often the processes and materials required are not compatible with current manufacturing processes. Conventional MEMS basically use a cantilever switch, a membrane switch, and a tunable capacitor structure. MEMS devices are fabricated using MEMS technology and are used to control electronic, mechanical or optical signal streams. However, the structure and original material properties of such devices can cause problems of more than 5 noon. Therefore, they cannot be fabricated together with conventional semiconductor processes, usually because of different materials and process incompatibility. Therefore, they cannot Integrated in traditional semiconductor manufacturing processes. 4 IBM/04157TW; FIS9-2003-0250 (JHW) 1321550 Yet another object of the present invention is to transfer or sub-assemble another substrate from one substrate to construct a more complex system that could not be fabricated in the past. Yet another object of the present invention is to fabricate MEMS structures using a modified damascene process.
，本發日月提供製造多層級MEMS裝置的方法，用以達到該 荨及/、他目的其方法係藉由在單層上建構許多零件，然後再 加以組裝，以形成多層或疊層裝置。 “’、 、、載體承載著零件，用以组褒複雜碰紙裝置，並且被 达到-個共同的喊地點。零件根據預先指定的順序堆疊起 來，而後從概被馳。糾，料歡置在合適的地點之 1， 在需要時經釋放掉入所需位置。The present invention provides a method of fabricating a multi-layer MEMS device for achieving this and/or for the purpose of forming a multilayer or stacked device by constructing a plurality of parts on a single layer and then assembling them. “The ', , and the carrier carry the parts to assemble the complex paper-carrying devices, and are reached to a common shouting place. The parts are stacked according to the pre-specified order, and then they are all driven. 1 of the appropriate location, released into the desired location when needed.
、，且裝區域包含位於載體的平自下的" a 3=的物件掉入該空腔内。加熱元件整合在該空腔内3 時給倾助。該空腔會有-❹個紐所提供的零件， =餘意數目的MEMS驅_賴移動。該空腔與在此組 、、些MEMS提供所需的精確數量的 用、或可現場處理，如同在；上的實驗室—般用於生商應 載體持有與移動需組裝的零件，每一載體容納一或複數個 4IBM/04157TW ； FIS9-2003-0250(JHW) =將所有突出物移除，設計得#的突出物—般具有大的 刻也不會對剩餘部份產生不良的影響。另一種 =法電流通過時會打開保險絲的材料將突出物移 ^在此％要_導電㈣，不過電流可以由晶片上的電 供；二:ί源連接晶片’比如用探針或類似的工具來提 、弟二種方式是雷射消融來移除突出物。 15 第四種方式是一次處理掉所有的突起物，在移掉可移除芦 麵Ir’、^载體與零件間的間隙填滿的材料，其相董_體‘ 二載刻，這種材料可以在現場提供細生支撐零 22=^絲進人可組裝的位置―易地 (或m的λ面圖，在此有用到可移除層15，在其上 t可移除射明咖嶋，-球射鑛後 千沈了等箱运至一不同的位置，也就是組裝區域。 為组裝區域獅與多個圍繞的載體m 多設定㈣t 面圖。這只是表示在準備組裝零件前的眾 r母一個載體利用任意數目的已知龐S驅 形成組裝好的裝置。 上或射，接著零件被釋放以 4IBM/04157TW ； FIS9-2〇〇3-025〇(JHW) 11 - 圖6A所示為與圖5類似的平面圖，其中多個載體10、 10A’以及10B圍燒組裳區域1〇〇。圖6同樣也表示出一些移 動載體至、’錄位置的可能機制，在本例巾，靜電梳型驅動器 2〇0係用來轉動齒輪25〇，經由齒輪與載體框架的匹配齒咬 合’移動至適當位置，下_會進—步說明。 驅動裔可彻魏與⑼崎的賴電紐動，以預定的 方式將零件與載體飾至適當位置（®+未顯示），另-種作 法疋以外部來源啟動驅動裝置。 圖6B所不為11 6A的排列方式的侧面圖，說明齒輪具有 一肩部。 圖7所示為圖6八的排列方式利用上面2個驅動器移動載 體10至組裝區域後的情形，將載體移動至空腔上有报多種方 法，一種是利用具有肩部255的齒輪，如圖6B所示。當載體 有部份位於鎌之上’肩部255以旋臂的方式支撐載體，避免 ，體以不想要的方式掉人空腔。—旦載體充分地覆蓋空腔，這 知則由柱子支撐’制柱子與零㈣的孔鮮，此時載體會一 如預期地掉進空腔内。 v圖7A所示為圖7的排列方4，接著再利用底下的驅動器 系統移動載體10B至組裝區域1〇〇的載體1〇之上的情形。 4IBM/04157TW ； FIS9-2003-0250(JHW) -12- 圖7B所示為圖7A中的載體1〇A放置於其他位於組裝區 知的載體之上的情形，在此例中，梳型驅動器26〇迫使載體 與右手邊2無m接合，以便將載歸粒裝區域。 圖8所為載體10D内由半導體製程技術建構的零件2〇D、 2m L22D、23D，以及24D，接下來將加以說明。較佳地， 這―件的中〜點具有孔30D，並藉以旋轉。目中所示的針腳 (pin)40D也可㈣半導難程加以製造，*過它們有可能是在 所屬，載體帽造。針腳柳具衫細途，其中包括在垂 直堆登的零相傳翁力（圖巾未顯示），穩定零件，並且協 助校準已堆疊的载體（圖中未顯示）。 圖9所示為圖8中的零件從載體被釋放後的情形，零件可 以在組裝前或組裝後從載體被釋放，或根本不被釋放。 圖10所示為載體10E内的零件20E、21E、22E、23E， 以及24E，係利用半導體製程技術製造。零件的中心點可具有 孔3〇E，一旦零件從載體被釋放後可繞著旋轉，針腳40E同時 是以半導體製程技術製造，不過它們有可能是在所屬的載體中 製造。針腳具有多顧途’其巾包括在垂直堆疊的零件 間傳遞動力（圖中未顯示），獻零件’並且協助校準已堆疊 的載體（圖中未顯示）。零件20E上的孔50E與圖8中的截髀 -上的針腳40D是配對的。 ㈣載體 4DBM/04157TW ; FIS9-2003-0250(JHW) -13- 圖11所示為圖财的零件從載體被釋放後的情形，零件 可以在組裝觀組驗從健_放，或根本不被釋放。 圖12所示為载體10F内的零件肅、加、,、顶，以 =24F ’係利用半導體製程技術製造。零件的中心點可具有孔 、—令件從載體被釋放後可繞著旋轉，針腳4GE同時是 、生I體衣域術製造，不過它們有可能是在所制載體中製 =的零件50F上的孔與圖8中喊體廳上的針腳是配 =13所示為圖12中的零件從载體被釋放後的情形，零件 可以在組裝前顿裝後從載體被釋放，或根本不被釋放。 ，Η所示為載體勤校準空腔丨⑻的情形校準的方式 相=以内部的工具，如空腔内的針腳11〇和零件内的孔勤 身L，在®中絲^ ’但針腳11Q也可以透過載體本 應盘Ϊ订校準。校準的方式也可能是以外部的工具，讓載體 10D與空腔側壁120相配對。And the loaded area containing the flat-bottomed " a 3= object located in the carrier falls into the cavity. The heating element is integrated into the cavity for 3 hours. The cavity will have the parts provided by the ❹ 纽 , , , , , , , , , , , , , , , , , , , , , , , , , , , The cavity and the MEMS provided in this group, the MEMS provide the required precise amount of use, or can be processed in the field, as in the laboratory, the parts are used for the carrier to hold and move the parts to be assembled, each One carrier accommodates one or a plurality of 4 IBM/04157TW; FIS9-2003-0250 (JHW) = removes all protrusions, and the design of the protrusions of # generally has a large moment and does not adversely affect the remaining parts. . Another type of = method current will open the fuse material to move the protrusions at this % to be conductive (four), but the current can be supplied by the power on the wafer; two: ί source to connect the wafer 'such as with a probe or similar tool The two ways to mention the brother are laser ablation to remove the protrusions. 15 The fourth way is to dispose of all the protrusions at a time, and remove the material that fills the gap between the removable reed Ir', the carrier and the part, and the opposite is the same as the body. The material can be provided on site with a fine support 0 22 = ^ wire into the position where people can be assembled - easy (or m λ face diagram, where the removable layer 15 is useful, on which t can be removed嶋,- After the ball is shot, the tank is transported to a different position, that is, the assembly area. For the assembly area lion and multiple surrounding carriers m, the (four) t-plane is set. This simply means that before assembling the parts. A carrier of any number of known carriers is used to form an assembled device. Up or down, then the part is released to 4IBM/04157TW; FIS9-2〇〇3-025〇(JHW) 11 - Figure 6A Shown is a plan view similar to that of Figure 5, in which a plurality of carriers 10, 10A', and 10B are enclosed in a grouping area. Figure 6 also shows some possible mechanisms for moving the carrier to the 'recording position, in this example. Towel, the electrostatic comb drive 2〇0 is used to rotate the gear 25〇, through the matching tooth bite of the gear and the carrier frame 'Move to the appropriate position, the next _ will advance - step description. Drive the genus Ke Wei and (9) Saki's electric drive to decorate the parts and carriers to the appropriate position in a predetermined way (®+ not shown), another The method of starting the drive device from an external source. Figure 6B is a side view of the arrangement of the 11 6A, illustrating that the gear has a shoulder. Figure 7 shows the arrangement of Figure 6-8 using the above two drives to move the carrier 10 to After the assembly area, there are many ways to move the carrier to the cavity. One is to use a gear with a shoulder 255, as shown in Figure 6B. When the carrier is partially located above the ' 'shoulder 255 with a swivel arm The way to support the carrier, to avoid the body falling into the cavity in an undesired way. Once the carrier fully covers the cavity, it is known that the column supports the column and the zero (four) hole fresh, and the carrier will be as expected Dropped into the cavity. Fig. 7A shows the arrangement side 4 of Fig. 7, and then the carrier system 10B is moved by the underlying driver system to the carrier 1〇 of the assembly area 1〇〇. 4IBM/04157TW ; FIS9- 2003-0250(JHW) -12- Figure 7B shows Figure 7 The carrier 1A in A is placed on top of other carriers located in the assembly area. In this example, the comb drive 26 is forced to engage the carrier with the right hand 2 without m, in order to load the loaded area. 8 is a part 2D, 2m L22D, 23D, and 24D constructed by a semiconductor process technology in the carrier 10D, which will be described next. Preferably, the middle to the point of the piece has a hole 30D and is rotated. The pin 40D shown in the figure can also be manufactured by (4) semi-conducting difficulties, * they may be in the possession, the carrier cap is made. The stitching willow shirt is fine, including the zero-phase transmission in the vertical stack. (not shown), stabilizes the part, and assists in calibrating the stacked carriers (not shown). Figure 9 shows the situation in which the part of Figure 8 is released from the carrier, which can be released from the carrier before or after assembly, or not released at all. Figure 10 shows parts 20E, 21E, 22E, 23E, and 24E in carrier 10E, fabricated using semiconductor process technology. The center point of the part may have a hole 3〇E which can be rotated once the part is released from the carrier. The stitch 40E is also manufactured by semiconductor manufacturing techniques, although they may be fabricated in the associated carrier. The stitches have a lot of care. The towel includes power (not shown) between the vertically stacked parts, and the parts are provided and assisted in calibrating the stacked carriers (not shown). The hole 50E on the part 20E is paired with the pin 40D on the paraplegic in Fig. 8. (4) Carrier 4DBM/04157TW; FIS9-2003-0250(JHW) -13- Figure 11 shows the situation in which the parts of the picture are released from the carrier. The parts can be checked in the assembled view or not at all. freed. Figure 12 shows the components in the carrier 10F, which are fabricated, fabricated, and mounted in a semiconductor process using =24F'. The center point of the part may have a hole, the member may be rotated after being released from the carrier, and the stitch 4GE is simultaneously manufactured by the body, but they may be on the part 50F of the manufactured carrier. The hole is shown in Fig. 8 as the pin on the body hall is shown as =13. The part in Fig. 12 is released from the carrier. The part can be released from the carrier after assembly, or not at all. freed. , Η shows the case where the carrier calibrates the cavity 丨 (8). The way to calibrate the phase = internal tools, such as the pin 11 空腔 in the cavity and the hole in the part, L in the ® wire ^ ' but the pin 11Q It is also possible to calibrate through the carrier. The method of calibration may also be an external tool that mates the carrier 10D with the cavity sidewalls 120.
V =15所示為經過堆疊後的載體勤 '觀以及，载 η 、WE ’以及l〇F可能會被移除，留下圖9、π，以及 的令件在原地。儘管在此沒有緣出空腔1〇 能會留在空胜_，或者是被移出空謂之外 -14- 4IBM/04l57TW；FiS9-2003.0250(JHW) 1321550 的組裝或次總成。 圖16所示為已組裝的零件從^^體勤應，以及娜 移除後並留在空腔KK) _情形，接下來，可以制在其他位 置所完成的科連接MEMS組额其她裝m统，以 及 MEMS。 圖17所示為圖16中的組裝在空腔1〇〇之外的情形。 由於本發明在同-基板±提供驅動賊_機制，將各種 零件組裝成-或多個多層級系統’並且將這樣的組裝放進另一 個組裝（或放在其上）’為了讓建構過程最佳化，因此需要用 到標準CMOS製造設備的製造步驟來進行。因此，以下將敘 述利用現有CMOS製造步驟的製程。 1 ·製作圖案(pattern)與蝕刻出空腔和校準結構(alignment structure) ° a. 矽(Si)基板； b. 利用傳統顯影技術(photolithography)製作圖案； c. 採用傳統活性離子蝕刻（RIE); d. 校準結構與側壁可以具有斜度以協助校準和避免黏著 (stiction)。 4IBM/04157TW ；FlS9-2003-0250(JHW) 在欲處理載體與零件之處先沉積可移除層（sacriflcial layer) ° a.可移除層可以是S〗LK (係陶氏化學公司(D〇wChemical Corp.)所製造的半導體介電質）、類鑽石(DLC)或傳統的 氧化物或金屬。SiLK材料中包含多種成份，又可稱為 Porous SiLK ，它是一種由丁酸内酯 (gamma-butyrolactone )、專屬的 B_staged 聚合物 (polymer)，以及三甲苯(mesityiene)等構成的聚合物樹 脂。另一種可能會用到的材料是類鑽石(diam〇nd like carbon, DLC)，也就是具有外層的非結晶碳，其中一部 分的碳原子鏈結成類似鑽石的組態，在許多方面也類似 鑽石。 b.厚度為1至ΙΟμιη，以便完全釋放隨後使用的零件。 沈積的層包含載體、零件以及零件的針腳。 a·沈積SiN作為阻擋RIE繼續餘刻的層，並提供黏著特 性(500 至 5000人)； ’、 b. 沈積Si02作為基礎介電層； c. 沈積SiN層； d. 選擇性的沈積Si〇2層以形成零件上的針腳； e. 利用傳統顯影技術(photolithography)在Si〇2以及SiN層 製作圖案與钱刻出針腳； f. 在基礎介電層使用傳統顯影技術製作圖案触刻出載 -16- 4IBM/04157TW ; FIS9-2003-0250(JHW) 體與零件； g•基礎介電層可經由製作圖案與敍刻提供電路結構♦· h傳統顯影技術製作圖案； h.利用傳統RIE進行蝕刻； 豇利用傳統物理氣相沈積（PVD)製程沈積襯墊 (liner-seed); ιν·利用傳統的銅電子沈積(Cu electr〇 dep〇sit)填滿； v.以傳統製程進行化學機械性研磨(CMp); vi•沈積包覆的SiN。 ^放可移除層，如此可職賴與仍畴在載體上的零 2移除可移除層㈣的方式包括如果沒有可氧化材料會 =在外，則使用電衆氧(oxygen咖酿)處理如果在移 *有機材料的過程中有可氧化材^ ^ ^ 態的繼行雜。=技t者= 解在離子蝕刻時如何應用這些混合氣體。 a. 钱刻SiN以暴露出2a中原來的槪層㈣觀㈣； b. 利用電漿氧執行釋放零件的動作。 啟動驅動機制以便進行組裝。 a. 利用傳統的運送機制將個別喊體移至組裝空腔； b. 載體被放置/钉至紐巾（有多種可能），也就是： 4IBM704157TW ； FlS9-2003-0250(JHW) -17- 1.可能具有肩部的小齒輪(pinion gear)跨在載體側邊 的齒棒(rack)上； ^載體被齒棒與小齒輪驅動帶至空腔之上，持有雯 件的载體由小齒輪的肩部支撐保持水平，而基板^ 面在小齒輪的肩部之下； 出.齒輪的位置被設定為當載體的架子已經超過小齒 輪，而載體的後緣將會落在空腔的邊界内； w lv•接著载體經由在空腔蝕刻過程中所形成的校準針 腳引導，會落在空腔的底部； v.載體會向組裝區域偏移，讓至少一邊被基板的頂端 表面撐起，一直到進入位置為止。 6·從載體釋放零件，讓组裝留在空腔内。 a. 計算乾侧_間，讓它足夠移除零件和賴之間的突 出物； b. 载體留在空腔内’不會阻礙最後的組裂工作。 工業應用性 本發明可叙地翻在傳送敏感轉，_是mems裝 置’因此在生醫、航太、車輛，以及通訊業界都有报廣泛的用 途。 -18- 4IBM/04I57TW ： FIS9-2003-0250(JHW) 熟悉此技藝者在了解上述的說明後’當知本發明可以有很 多的變化與修正，要注意的是，在此所揭示的特殊實施例與""圖 示並非用來限制本發明。因此，較佳實施例的細節並非用來限 縮專利申請範圍，只是提出在此發明中必要的—些特點。 【圖式簡單說明】 在此所附的圖表係包含並構成詳細說明的—部分，用以圖 不本發明的較佳實施例’並配合以上的一般說明與較佳實施例 的詳細說明，解釋本發明的原則，其中： 圖1與圖2分別為組裝區域的平面與剖面圖； 圖 圖3與圖4分別為麟敎裝零件之載體的平面與剖面 圖5所示為第—實施例巾紐包含位她裝區域各地點 的零件； ” 圖6A所不裝載有零件的載體的排 系統與組餅列； «動 圖6Β所示為圖6Α的排列方式的側面圖，說明齒輪 一肩部。 、 ，7、圖7Α與圖7Β所示為裝載有零件的載體的各種排 列方式，其中包括驅動系統與組裝序列； 圖8為包含絲與分铺的透視圖； 圖9所示為圖8中相同零件從載體被釋放後的情形； 4IBM/04157TW ； FIS9-2003-0250(JHW) ，19· 及垂直校準、連接腳，以 ，、且裒令件的垂直動作傳遞； 圖2所不為第二實施例中裝载有零件的載體； 圖所:為圖12中的零件從載體被釋放後的情形； 圖14所7^魏載有零件喊體校準組親域的情形； 圖15所示為出現在組裝階段的—複數個堆疊載體；以及 與二 首先經由釋放而後組裝的零件，在有 【主要元件符號說明】 15可移除層 5基板 10、10A、10B、10C 載體 20D、21D、22D、23D、24D 零件 30D、50E、30F 孔 40D、40E 針腳 20E、21E、22E、23E、24E、20F、21F、22F、23F、24F、50 50F零件 60框架 100空腔/組裝區域 120空腔側壁 250齒輪 260梳型驅動器 70突出物 110結構 200靜電梳型驅動器 255肩部 4IBM/04157TW ； FIS9-2003-0250(JHW) 20-V = 15 shows the carrier after stacking, and the loads η, WE ’ and l〇F may be removed, leaving the components of Figure 9, π, and in place. Although there is no chance that the cavity 1〇 will remain in the air _, or be removed from the empty space -14- 4IBM/04l57TW; FiS9-2003.0250 (JHW) 1321550 assembly or sub-assembly. Figure 16 shows the assembled parts from the ^ ^ body and should be removed and left in the cavity KK) _ situation, then, can be made in other locations to complete the connection MEMS group m system, and MEMS. Figure 17 shows the assembly of Figure 16 outside of the cavity 1〇〇. Since the present invention provides a drive thief-mechanism in the same-substrate ± assembly of various parts into - or multiple multi-level systems 'and puts such assembly into another assembly (or placed on it) 'in order to make the construction process the most It is necessary to use the manufacturing steps of standard CMOS manufacturing equipment. Therefore, the process using the existing CMOS manufacturing steps will be described below. 1 • patterning and etching out cavities and alignment structures ° a. 矽 (Si) substrates; b. patterning using conventional photolithography; c. using conventional reactive ion etching (RIE) d. The calibration structure and sidewalls may have a slope to assist in calibration and avoid stiction. 4IBM/04157TW ; FlS9-2003-0250 (JHW) Deposit the sacriflcial layer before handling the carrier and parts ° a. The removable layer can be S〗 LK (Dow Chemical Company (D)半导体wChemical Corp.), a semiconductor-like dielectric, diamond-like (DLC) or conventional oxide or metal. The SiLK material contains a variety of components, also known as Porous SiLK, which is a polymer resin composed of gamma-butyrolactone, a proprietary B_staged polymer, and mesityiene. Another material that may be used is diam〇nd like carbon (DLC), which is an amorphous carbon with an outer layer. A part of the carbon atoms are chained into a diamond-like configuration and in many ways similar to diamonds. b. The thickness is from 1 to ΙΟμηη in order to completely release the parts that are subsequently used. The deposited layer contains the carrier, the part, and the pins of the part. a. Deposition of SiN as a barrier RIE to continue the residual layer and provide adhesion characteristics (500 to 5000 people); ', b. Deposit SiO 2 as the base dielectric layer; c. Deposit SiN layer; d. Selective deposition of Si〇 2 layers to form the pins on the part; e. Use the traditional photolithography to make patterns and money in the Si〇2 and SiN layers; f. Use the traditional developing technology to make patterns on the base dielectric layer. -16- 4IBM/04157TW ; FIS9-2003-0250 (JHW) body and parts; g• base dielectric layer can provide circuit structure through patterning and quotation ♦· h traditional development technology; h. using traditional RIE Etching; 豇 using conventional physical vapor deposition (PVD) process deposition liner (liner-seed); ιν·filled with traditional copper electron deposition (Cu electr〇dep〇sit); v. chemical mechanicality by traditional process Grinding (CMp); vi• deposition of coated SiN. ^Removable layer, so the way to remove the removable layer (4) still on the carrier, including if there is no oxidizable material = outside, use oxygen to process If there is an oxidizable material in the process of moving the organic material, there is a subsequent impurity. =Technology = How to apply these mixed gases during ion etching. a. Money engraved SiN to expose the original layer (4) in 2a; (4); b. Use the plasma oxygen to perform the action of releasing the part. Start the drive mechanism for assembly. a. Use the traditional transport mechanism to move individual shouts to the assembly cavity; b. The carrier is placed/nailed to the towel (there are many possibilities), namely: 4IBM704157TW; FlS9-2003-0250(JHW) -17- 1 a pinion gear that may have a shoulder spans the rack on the side of the carrier; ^ the carrier is driven by the rack and pinion to the cavity, and the carrier holding the figure is small The shoulder support of the gear is kept horizontal, and the substrate is below the shoulder of the pinion; the position of the gear is set such that when the carrier of the carrier has exceeded the pinion, and the trailing edge of the carrier will fall in the cavity Within the boundary; w lv • the carrier is guided through the calibration pins formed during the cavity etching process, and will fall on the bottom of the cavity; v. the carrier will be offset toward the assembly area, so that at least one side is supported by the top surface of the substrate From now on until the entry position. 6. Release the part from the carrier and leave the assembly in the cavity. a. Calculate the dry side _ between, so that it is sufficient to remove the protrusion between the part and the lamella; b. The carrier remains in the cavity ‘ does not hinder the final cleavage work. Industrial Applicability The present invention is versatile in transmitting sensitive transmissions, and is a mems device, and thus has been widely used in biomedical, aerospace, vehicle, and communication industries. -18- 4IBM/04I57TW : FIS9-2003-0250 (JHW) After familiar with the above description, the person skilled in the art knows that there are many variations and modifications of the present invention. It should be noted that the special implementation disclosed herein. The examples and "" are not intended to limit the invention. Therefore, the details of the preferred embodiment are not intended to limit the scope of the patent application, but merely set forth some of the features necessary in the invention. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in the drawings The principles of the present invention, wherein: Figure 1 and Figure 2 are plane and cross-sectional views of the assembled area, respectively; Figure 3 and Figure 4 are plane and cross-section of the carrier of the lining component, respectively. The button contains the parts of the various locations in the area where she is installed; ” Figure 6A shows the row system and the group of cakes without the parts; Fig. 6Β shows the side view of the arrangement of Fig. 6Α, illustrating the shoulder of the gear Figure 7, Figure 7 is a diagram showing the various arrangements of the carrier loaded with the parts, including the drive system and assembly sequence; Figure 8 is a perspective view of the wire and the division; Figure 9 is Figure 8. After the same part is released from the carrier; 4IBM/04157TW; FIS9-2003-0250 (JHW), 19· and vertical alignment, connecting the foot, to, and the vertical movement of the command piece; Figure 2 is not The load of the part loaded in the second embodiment Figure: The situation in which the parts in Figure 12 are released from the carrier; Figure 14 shows the case where the parts are in the vicinity of the component calibration group; Figure 15 shows the multiple stages in the assembly phase. The carrier; and the second component that is first assembled via release, in the main component symbol description 15 removable layer 5 substrate 10, 10A, 10B, 10C carrier 20D, 21D, 22D, 23D, 24D part 30D, 50E, 30F hole 40D, 40E pin 20E, 21E, 22E, 23E, 24E, 20F, 21F, 22F, 23F, 24F, 50 50F part 60 frame 100 cavity / assembly area 120 cavity side wall 250 gear 260 comb drive 70 protrusion 110 structure 200 electrostatic comb drive 255 shoulder 4IBM/04157TW; FIS9-2003-0250 (JHW) 20-