TWI320591B - 6t sram cell and integrated circuit thereof - Google Patents

6t sram cell and integrated circuit thereof

Info

Publication number
TWI320591B
TWI320591B TW095140705A TW95140705A TWI320591B TW I320591 B TWI320591 B TW I320591B TW 095140705 A TW095140705 A TW 095140705A TW 95140705 A TW95140705 A TW 95140705A TW I320591 B TWI320591 B TW I320591B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
sram cell
sram
cell
integrated
Prior art date
Application number
TW095140705A
Other languages
English (en)
Other versions
TW200741984A (en
Inventor
Chun Yi Lee
Chii Ming Wu
Huai Ying Huang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200741984A publication Critical patent/TW200741984A/zh
Application granted granted Critical
Publication of TWI320591B publication Critical patent/TWI320591B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10P90/1906—
    • H10W10/181—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
TW095140705A 2005-12-02 2006-11-03 6t sram cell and integrated circuit thereof TWI320591B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/293,340 US7279755B2 (en) 2005-12-02 2005-12-02 SRAM cell with improved layout designs

Publications (2)

Publication Number Publication Date
TW200741984A TW200741984A (en) 2007-11-01
TWI320591B true TWI320591B (en) 2010-02-11

Family

ID=38117854

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095140705A TWI320591B (en) 2005-12-02 2006-11-03 6t sram cell and integrated circuit thereof

Country Status (2)

Country Link
US (1) US7279755B2 (zh)
TW (1) TWI320591B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI698873B (zh) * 2017-03-28 2020-07-11 聯華電子股份有限公司 半導體記憶元件

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7869262B2 (en) * 2007-01-29 2011-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device with an asymmetric layout structure
CN102763005B (zh) * 2007-08-08 2016-10-19 皇家飞利浦电子股份有限公司 硅光电倍增器读出电路
CN101861527B (zh) 2007-08-08 2013-08-14 皇家飞利浦电子股份有限公司 硅光电倍增器触发网络
KR101914798B1 (ko) 2010-07-20 2018-11-02 유니버시티 오브 버지니아 페이턴트 파운데이션 메모리 셀
US9583178B2 (en) * 2012-08-03 2017-02-28 Qualcomm Incorporated SRAM read preferred bit cell with write assist circuit
US10411022B1 (en) * 2018-06-14 2019-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM structure
CN115763469B (zh) * 2021-09-01 2026-01-09 长鑫存储技术有限公司 一种驱动电路的版图、半导体结构及半导体存储器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3637299B2 (ja) * 2001-10-05 2005-04-13 松下電器産業株式会社 半導体記憶装置
US20050248977A1 (en) * 2004-05-10 2005-11-10 Taiwan Semiconductor Manuafacturing Co., Ltd. Resistive cell structure for reducing soft error rate
US20060102957A1 (en) * 2004-11-12 2006-05-18 Jhon-Jhy Liaw SER immune cell structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI698873B (zh) * 2017-03-28 2020-07-11 聯華電子股份有限公司 半導體記憶元件

Also Published As

Publication number Publication date
US20070126060A1 (en) 2007-06-07
TW200741984A (en) 2007-11-01
US7279755B2 (en) 2007-10-09

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