1320183 九、發明說明： 【發明所屬之技術領域】 本發明提供一種調整可程式電阻以達到一預定電阻值的方 法’尤指一種調整電氣熔絲之電阻以達到一預定電阻值之方法。 【先前技術】 ® 電氣炫絲(e-fiise)係指以電氣燒毀(blow)之多晶石夕炫絲 .(poly-fiise)。傳統之電氣熔絲係用於一半導體記憶體元件之重複電 路(redundancy circuit)中。該重複電路中包括有複數個熔絲，若經 測試主要記憶胞陣列後發現有缺陷記憶胞，即可藉由燒斷重複電 路中相對應的多晶矽熔絲，並以多餘的記憶胞來取代有缺陷記憶 胞，藉此修補該半導體記憶體元件。 • 習知電氣熔絲包括有一多晶矽熔絲以及一電晶體串接該多晶 石夕熔絲。該電晶體包括一設於一通道區上之閘極，以及設置於問 極兩側的汲極/源極區。一般而言’閘極包含有多晶矽層 '石夕化金 屬(silicide)層以及氮化石夕蓋層。多晶矽熔絲與電晶體的閘極結構相 同，亦即由多晶矽層、矽化金屬層以及氮化矽蓋層堆疊而成。其 裝置結構如第1圖所示’多晶梦炫絲12 —般呈細長條狀圖宰，盆 一端外接一炫絲源極電壓(fiise source voltage，VFS)，其另一端則電 連接於電bb體16的沒極/源極區18 ’而電晶體的另一 j：及極/源極區 6 ⑧ 1320183 20則通常為接地。電晶體的閘極22係接至一閘極電壓(Vg)，並可 藉由控制該閘極電壓，對該電氣熔絲提供固定之電流而燒毀之。 習知用以燒毀電氣熔絲的該閘極電壓通常為一脈衝電壓。該 脈衝電壓為一由脈衝電壓產生器提供之單一方形波。請參照第2 圖，其顯示習知用以燒毁電氣熔絲之脈衝電壓示意圖。該單一方 形波之最高電壓值為VIH，而最低電壓值為vIL，通常最低電壓值 VIL為0伏特(v〇lt，V)，而最高電壓值VlH為電晶體的啟始電壓 (threshold voltage, VTH)。該電氣熔絲在受熱後，其内部之始或硼將 將遷移(migrate)至節點上。此時，該電氣熔絲之電阻將會增加。藉 由控制總脈衝時間(TVT!)，可使熔絲中之鈷或硼完全移出，並消 耗掉部分之多晶矽(poly)，從而大幅提高該電氣熔絲之電阻，甚至 使其具有超高電阻值(ultra-high resistance)。例如，可使多晶石夕溶絲 由最初的低電阻值(約100歐姆)提高至數千、數萬倍的高電阻值(百 萬歐姆）。 在此種習知的使用方式下，電氣溶絲可具有未經燒溶(unbl_) 以及燒毀兩種狀態(state)，亦即燒熔前之低電阻狀態與燒熔後之超 高電阻狀態。電氣熔絲此種特性可被應用於可程式化唯讀記情體 (programmableROM,PROM)上，以進行資料的輸入。亦即在閘 極提供高電壓將連結於電晶體上的熔絲燒毀形成超高電阻，而產 7 ⑧ 1320183 生斷路(off-state) ’即完成”1”的輸入；反之’若熔絲完全未經燒溶， 貝J其與電ββ體間之連接線路仍存在’而形成導通狀態(〇n_state)，即 相當於存入”0”。此種利用高電壓燒毀熔絲的過程即為程式化 (programming) ^經由程式化過程，可使經程式化而形成斷路狀態 的溶絲與未經程式化而形成通路狀態的熔絲以數位資料(出咖1阶) 形式儲存資訊。然而，一旦程式化的熔絲將永久形成斷路狀態存 _ 在。換言之，被燒毁之電氣熔絲無法回復，因此無法重複使用。 【發明内容】 本發明之主要目的在於提供一種調整可程式電阻達到一預定 電阻值的方法，以更有效利用電氣熔絲。 根據本發明之專利顧，首先係提供—龍以燒熔 鲁blGW)射程式電阻。賴壓係為-脈衝方微，且健供於連至 該:程式電阻之電晶體的間極上。接著利用一電阻比較器比較該 可程式電阻之電阻值與一預定電阻值是否相符，若相符，則停止 燒溶該可程錢阻。此外，絲可料電阻之該做該預定電 阻值不相符，_算再進行-次衫會超黻縱電阻值， 右是，則停止燒_可程式電阻，若非’則繼續燒炫該可程式電 1320183 本㈣之綠，_财程錢对藉衫魏炼而具 有不同電阻值。因此在顧於記鐘中時，可記錄更多資訊，並 可在記憶體中重複仙，從*達卿省成本之目的。 【實施方式】 本發明提供-翻整可程式電阻翻—預定電_的方法。 鲁"月參照第3圖’第3圖係為根據本發明之一具體實施例的流程圖。 根據此具體實施例，該可程式電轉、為—電氣麟。該電氣炫絲 .之_端連至-電晶體的汲極/源極區，藉由對該電晶體之閘極提供 .脈衝電壓，可燒炼該溶絲，並使其達到一預定電阻值。請參照第4 圖又第4圖顯示根據本發明之一具體實施例用以燒炫電氣炫絲之 r衝電壓示,$圖。如第4圖所示，本發明所提供之脈衝電壓係為 方升>/波本發明之脈衝電壓相較於習知之脈衝電壓(第2圖)具有 鲁較紐之脈衝時間T,且相較於習知僅提供一次脈衝電壓，本發明 可提供複數次之脈衝電壓。請參照第5圖，第5圖為根據本發明 之方法多_人燒炼一電氣溶絲後電氣炼絲之電阻值變化示意圖。根 據第5圖’每一次燒炫該電氣溶絲，《電阻值均穩定成長，亦即， 利用本發明之方式確實能財朗魏氣縣之電阻值。 印繼續參照第3圖。首絲該可程式電阻提供-次脈衝電壓 以燒熔之(步驟312) ’其中該脈衝電壓提供之時間較短，從而不致 9 1320183 將該可程式電阻燒炫為超高電阻。接著利用一電阻比較器比較該 燒溶過之可程式電阻的電阻值是否達到一預定電阻值Rp (步驟 314)。若該可程式電阻之電阻值已達到該預定電阻值Rp，則停止 燒熔之程序，以完成該可程式電阻之調整(步驟316)。若該可程式 電阻之電阻值低於該預定電阻值Rp，則計算繼續達到該預定電阻 值所需提供之脈衝次數(步驟318)，若該次數小於1，則停止燒熔 之程序完成該可程式電阻之調整(步驟316)，若次數大於丨，則繼 續對該可程式電阻提供脈衝電壓以燒熔之(步驟312)。亦即，若繼 續達到該電_所需之脈衝電壓數小於丨時，__可程式電 阻提供電壓可能造成該可程式電阻超過所需之阻值仏，因此不再 對其提供電壓。然而，亦可藉由調整步驟312中之脈衝電壓提供 時間，或電紐以對該可程式電_供適#之脈衝電壓。 此外’根據本發明’該可程式餘亦可以其他方式進行調整。 :如’:計算在固定電壓值與脈衝時間下，達到預定電阻值心所 兩之最冋脈衝電壓數N(次數高於N時將使可程式電阻之阻值超 預定電阻值Rp)後，再進行第3圖所示之流程。亦即，在每 二燒财可喊電崎(轉312)，比較該電阻值是邱達該預定 2值(步驟314) ’若未到達，則判斷所提供之脈衝數是否到達n， ^未到達’則回到步驟312重新·該可程式電阻。當然，亦可 —開始即觸可程式電阻提供N舰衝輕，使其直接達到該 ⑧ 1320183 預定電阻值。 必須說明的是’根據本發明，上述流程中之參數皆可依需要 調整。例如所提供脈衝驗之時間以及電壓值皆為可調整。又例 如在步驟312中’一次可對該可程式電阻提供一個或數個脈衝電 壓。且該可程式電時可為其他具有類似結構之㈣，而不限定 癱於電氣熔絲。而在該可程式電阻的應用上，若該預定電阻值心為 百萬歐姆時’該可程式電阻可作為一保險絲使用。此外，本發明 之可程式電阻亦可如習知之電氣溶絲用於記憶體中以進行資料之 .記錄。請參照第4圖與第5圖。如第4圖對-電氣麟提供第一 個脈衝時’將可使其達到第5圖中經第一次燒炫後之電阻值，而 提供第二次脈衝後，則可使電氣熔絲達到第二次燒熔後之電阻 值。亦即，藉由控制對電氣、熔絲提供之脈衝電壓數，能夠精破控 _ 制電氣熔絲所具有之電阻值。是以，可藉由本發明能精翻整電 阻值之特性，將記憶體中之電氣熔絲分為具有不同電阻值之族 群以支援種夕階#又程式化(multi-level-programming，MLP)、以 及多次程式化(multi-times-programming，MTP)的使用方式。 在多階段程式化的應用方式上，可藉由將電氣炫絲預設為多 種狀態(states)，以使其記錄更多的訊息。例如，可預設電氣熔絲 可能具有未燒熔、燒熔至電阻為5000歐姆(〇hm)(亦即預定電阻 1320183 .為5000輯）' 燒炼至電阻為50000歐姆、以及燒炫至電阻為 500000歐姆等四種狀態。相對於傳統之電氣熔絲僅能記錄斷路與 導通兩種狀·4 ’因此僅能記錄兩種訊息，關巾之電氣溶絲可記 錄四種訊息’亦即兩位元(bits)的資訊。換言之，此多階段程式化 之電氣熔絲可取代兩個傳統的電氣溶絲。當然，亦可將電氣溶絲 預設為更多種狀態，以記錄更多的資訊。 參 ❼在多次程式化的應用上，則係藉由改變分界點(trippoint)而 重複使用該電氣溶絲。例如，將電氣溶絲分為未燒炼以、及燒炼 •至電阻為5000歐姆(Ohm)兩個鱗，利用未燒熔之族群紀錄訊 息而利用5000歐姆之族群記錄訊息”i”。*在第二次使用時， 將基準點調至5000歐姆，亦即將必須輸入”〇，，之電氣炼絲燒溶至 5000歐姆（已達5〇〇〇歐姆者無須再燒溶），而將必須輸入τ之電 φ 祕絲燒溶至50000歐姆或更高之電阻值。換言之，利用本發明 所提供之調整可程式電阻方法，並調整資訊記錄的料點，即可 重複使用同-電氣炫絲。而將此技術應用於記憶體中，則可大幅 減少電氣熔絲之數量，並可節省晶片（chip)的空間。 利用本發明提供之方法’可藉由控糊極電壓提供之時間及 次數調整電氣祕的電阻值，以更有效地魏_。而將本 發明提供之絲顧於記紐巾，财節省電氣祕之使用量。 1320183 此外’由於柳習知之電紐轉可實施本㈣之方法， 發明在實施上極為簡便經濟。 ，因此本 以上所述僅為本發明之較佳實施例，凡依本發财請專利範 圍所做之解變化與修飾，本㈣之涵蓋範圍。 【圖式簡單說明】 第1圖為習知電氣熔職置結構之示意圖。 第2圖為f知用以燒炫電魏絲之脈衝電壓示意圖。 第3圖為輯本發明之—具體龍歡流程圖。 第4圖為根縣發明之-具體實施姻以触電氣熔絲之脈衝 壓不意圖。 第5圖為根據本發明之方衫次燒熔—電氣熔絲後電氣溶絲之電 阻值變化示意圖。 【主要元件符號說明】 12 多晶矽熔絲 312 燒熔熔絲 16 日 WA €晶體 314 比較電阻值 18 汲極/源極區 316 停止燒熔熔絲 20 汲極/源極區 318 檢查繼續達到該預定電阻值 22 閘極 所需之燒熔次數 13 ⑧1320183 IX. Description of the Invention: [Technical Field] The present invention provides a method of adjusting a programmable resistor to achieve a predetermined resistance value, particularly a method of adjusting the resistance of an electric fuse to achieve a predetermined resistance value. [Prior Art] ® E-fiise refers to poly-fiise that is electrically blown down. Conventional electrical fuses are used in a redundancy circuit of a semiconductor memory device. The repeating circuit includes a plurality of fuses. If the defective memory cells are found after testing the main memory cell array, the corresponding polysilicon fuses in the repeating circuit can be blown and replaced by redundant memory cells. Defective memory cells, thereby repairing the semiconductor memory component. • The conventional electrical fuse includes a polysilicon fuse and a transistor connected in series with the polycrystalline fuse. The transistor includes a gate disposed on a channel region and a drain/source region disposed on both sides of the gate. In general, the gate includes a polycrystalline germanium layer, a silicide layer, and a nitride layer. The polysilicon fuse has the same gate structure as the transistor, that is, a polycrystalline germanium layer, a germanium metal layer, and a tantalum nitride cap layer. The structure of the device is as shown in Figure 1. The polycrystalline Mengxian 12 is generally slender and strip-shaped. The end of the basin is connected to a fiisi source voltage (VFS), and the other end is electrically connected to electricity. The immersion/source region 18' of the bb body 16 and the other j: and the pole/source region 6 8 1320183 20 of the transistor are typically grounded. The gate 22 of the transistor is coupled to a gate voltage (Vg) and can be burned by providing a fixed current to the electrical fuse by controlling the gate voltage. The gate voltage used to burn electrical fuses is typically a pulse voltage. The pulse voltage is a single square wave provided by the pulse voltage generator. Please refer to FIG. 2, which shows a schematic diagram of a pulse voltage conventionally used to burn electrical fuses. The highest voltage value of the single square wave is VIH, and the lowest voltage value is vIL, usually the lowest voltage value VIL is 0 volts (v 〇 lt, V), and the highest voltage value VlH is the threshold voltage of the transistor (threshold voltage, VTH). After the electrical fuse is heated, its internal or boron will migrate to the node. At this point, the electrical fuse's resistance will increase. By controlling the total pulse time (TVT!), the cobalt or boron in the fuse can be completely removed, and part of the polycrystalline silicon (poly) is consumed, thereby greatly increasing the electrical resistance of the electric fuse, and even making it have an ultra-high resistance. Value (ultra-high resistance). For example, the polycrystalline spine filament can be increased from the initial low resistance value (about 100 ohms) to thousands and tens of thousands of high resistance values (million ohms). In this conventional mode of use, the electrically soluble filaments may have unburned (unbl_) and burned states, i.e., a low resistance state prior to sintering and an ultra high resistance state after firing. This feature of electrical fuses can be applied to programmable programmable ROMs (PROMs) for data entry. That is, the high voltage is supplied to the gate to burn the fuse connected to the transistor to form an ultra-high resistance, and the output of the 7 8 1320183 off-state 'is completed 1' input; otherwise, if the fuse is completely Without being dissolved, the connection line between the shell and the electric ββ body still exists and forms an on state (〇n_state), which is equivalent to depositing “0”. The process of burning a fuse with a high voltage is programmed. Through a stylization process, a stray wire that is stylized to form a disconnected state and a fuse that is not programmed to form a path state are used as digital data. (Out of the 1st order) Save the information in the form. However, once the stylized fuse will permanently form an open state, _. In other words, the burnt electrical fuse cannot be recovered and therefore cannot be reused. SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method of adjusting a programmable resistance to a predetermined resistance value to more effectively utilize an electrical fuse. According to the patent of the present invention, firstly, the dragon is used to burn the blGW. The voltage is applied to the pulse square, and is supplied to the interpole of the transistor of the program resistance. Then, a resistor comparator is used to compare whether the resistance value of the programmable resistor matches a predetermined resistance value, and if it matches, the burn-in is stopped. In addition, the predetermined resistance value of the wire resistive resistor does not match, and the _ count is performed again - the secondary shirt will exceed the longitudinal resistance value, and if the right is, the burn _ programmable resistance is stopped, if not, the program continues to be burned. Electricity 1320183 The green of this (four), _ 财钱 money has different resistance values for the borrowing of the shirt. Therefore, when you are in the clock, you can record more information, and you can repeat the fairy in the memory, from the cost of * Daqing province. [Embodiment] The present invention provides a method of turning over a programmable resistor-predetermined power. Lu "Month Referring to Figure 3' Figure 3 is a flow chart in accordance with an embodiment of the present invention. According to this embodiment, the programmable electric transfer is - electric lining. The galvanic wire is connected to the drain/source region of the transistor, and by supplying a pulse voltage to the gate of the transistor, the lysate can be smelted and brought to a predetermined resistance value. . Referring to Fig. 4 and Fig. 4, there is shown a r-voltage diagram for igniting an electric genital yarn according to an embodiment of the present invention. As shown in FIG. 4, the pulse voltage system provided by the present invention is a square pulse>/wave. The pulse voltage of the present invention has a pulse time T of Luneng compared to a conventional pulse voltage (Fig. 2), and the phase The present invention can provide a plurality of pulse voltages as compared with the prior art that only one pulse voltage is provided. Referring to Fig. 5, Fig. 5 is a schematic view showing the change of the resistance value of the electric wire after the electric smelting of a plurality of electric smelting wires according to the method of the present invention. According to Fig. 5' each time the electric melting wire is burned, "the resistance value is steadily growing, that is, the resistance value of Weiqi County can be surely obtained by the method of the present invention. Print continues with reference to Figure 3. The first wire of the programmable resistor provides a sub-pulse voltage to be sintered (step 312)' wherein the pulse voltage is supplied for a shorter period of time so that the programmable resistor is not burned to an ultra-high resistance. Next, a resistance comparator is used to compare whether the resistance value of the burned programmable resistor reaches a predetermined resistance value Rp (step 314). If the resistance value of the programmable resistor has reached the predetermined resistance value Rp, the program of the firing is stopped to complete the adjustment of the programmable resistance (step 316). If the resistance value of the programmable resistor is lower than the predetermined resistance value Rp, calculate the number of pulses required to continue to reach the predetermined resistance value (step 318). If the number of times is less than 1, the program to stop the melting is completed. The adjustment of the program resistance (step 316), if the number of times is greater than 丨, continues to supply a pulse voltage to the programmable resistor to be sintered (step 312). That is, if the number of pulse voltages required to continue to reach the power is less than 丨, the voltage supplied by the __ programmable resistor may cause the programmable resistance to exceed the required resistance 仏, so no voltage is supplied thereto. However, the pulse voltage can be supplied by adjusting the pulse voltage in step 312, or the voltage can be applied to the pulse voltage of the programmable voltage. Further, the program can be adjusted in other ways according to the present invention. : such as ': Calculate the maximum number of pulse voltages N at the fixed voltage value and the pulse time to reach the predetermined resistance value (when the number of times higher than N will make the resistance of the programmable resistance exceed the predetermined resistance value Rp) Then proceed to the flow shown in Figure 3. That is, in every second burning, you can call Tesaki (turn 312), and compare the resistance value to the predetermined 2 value of Qiu Da (step 314). If it does not arrive, judge whether the number of pulses provided reaches n, ^ not When it arrives, it returns to step 312 to re-program the resistance. Of course, it is also possible to start with a programmable resistor to provide N ship light, so that it directly reaches the predetermined resistance value of 8 1320183. It must be noted that the parameters in the above process can be adjusted as needed according to the present invention. For example, the pulse test time and voltage values are all adjustable. Also for example, in step 312, one or several pulse voltages may be supplied to the programmable resistor at a time. Moreover, the programmable electric power can be other (4) having a similar structure, and is not limited to the electric fuse. In the application of the programmable resistor, if the predetermined resistance value is one million ohms, the programmable resistor can be used as a fuse. In addition, the programmable resistor of the present invention can also be used in a memory for recording data as is known in the art. Please refer to Figures 4 and 5. As shown in Figure 4 - when the first pulse is provided by the electric lining, it will be able to reach the resistance value after the first smoldering in Fig. 5, and after the second pulse is provided, the electrical fuse can be reached. The resistance value after the second firing. That is, by controlling the number of pulse voltages supplied to the electric and fuse, it is possible to finely control the resistance value of the electric fuse. Therefore, by the characteristics of the present invention, the electrical fuses in the memory can be divided into groups having different resistance values to support the multi-level-programming (MLP). And the use of multi-times-programming (MTP). In a multi-stage stylized application, it is possible to record more messages by presetting the electric shattering into a plurality of states. For example, the pre-set electrical fuse may have an unfired, sintered to a resistance of 5000 ohms (〇hm) (ie, a predetermined resistance of 1320183. for 5000 series)' is smelted to a resistance of 50,000 ohms, and burned to resistance It has four states of 500000 ohms. Compared with the traditional electric fuse, only the two types of disconnection and conduction can be recorded. Therefore, only two kinds of messages can be recorded, and the electric wire of the towel can record four kinds of information, that is, information of two bits. In other words, this multi-stage stylized electrical fuse can replace two conventional electrical filaments. Of course, the electric wire can also be preset to more states to record more information. In many stylized applications, the electric filament is reused by changing the trippoint. For example, the electric lysate is divided into two scales which are not smelted and smelted to a resistance of 5000 ohms (Ohm), and the information "i" is recorded by the group of 5000 ohms by using the unburned group record information. * In the second use, adjust the reference point to 5000 ohms, and you will have to enter "〇,, the electric wire is dissolved to 5000 ohms (there is no need to burn again if it reaches 5 ohms), but will It is necessary to input the electrical value of τ to dissolve the resistance value to 50,000 ohms or higher. In other words, by using the adjustable programmable resistance method provided by the present invention and adjusting the information recording material point, the same-electrical display can be repeated. In this case, the application of this technique to the memory can greatly reduce the number of electrical fuses and save space on the chip. The method provided by the present invention can be used to control the time provided by the paste voltage and The number of times adjusts the resistance value of the electric secret to be more effective. However, the wire provided by the present invention can be used for the purpose of saving the electrical secret. 1320183 In addition, the electric power can be implemented by Liu Xizhi (4) The method of the invention is extremely simple and economical to implement. Therefore, the above description is only a preferred embodiment of the present invention, and the scope of the invention is changed and modified according to the scope of the patent application. figure Single explanation] Fig. 1 is a schematic diagram of a conventional electric melting structure. Fig. 2 is a schematic diagram showing the pulse voltage used to burn the electric WEI. Fig. 3 is a detailed flow chart of the present invention. Fig. 4 is a view of the invention of the root county - the specific implementation of the pulse voltage of the electric fuse is not intended. Fig. 5 is a schematic view showing the change of the electric resistance value of the electric melting wire after the electric melting of the square shirt according to the present invention. [Main component symbol description] 12 Polysilicon fuse 312 Burning fuse 16 Day WA € Crystal 314 Comparative resistance value 18 Drain/source region 316 Stop blow fuse 20 Bungee/source region 318 Check to continue to reach the reservation Resistance value 22 Number of blows required for the gate 13 8